CN106383258B - Sample circuit is isolated in voltage - Google Patents
Sample circuit is isolated in voltage Download PDFInfo
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- CN106383258B CN106383258B CN201610780604.1A CN201610780604A CN106383258B CN 106383258 B CN106383258 B CN 106383258B CN 201610780604 A CN201610780604 A CN 201610780604A CN 106383258 B CN106383258 B CN 106383258B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0084—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring voltage only
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Abstract
The invention discloses a kind of voltages, and sample circuit is isolated, including the first metal-oxide-semiconductor, isolating transformer, first resistor, first inductance, first diode, first capacitor, second resistance, 3rd resistor and MCU, the grid of first metal-oxide-semiconductor inputs pwm control signal, input voltage is accessed in one end of isolating transformer primary coil, the other end is connect with the drain electrode of the first metal-oxide-semiconductor, one termination first voltage of isolating transformer secondary coil, one end of isolating transformer secondary coil also passes sequentially through first resistor and the first inductance and one end of first diode connects, the other end of first diode is connect with one end of one end of first capacitor and second resistance respectively, the other end of second resistance and one end of 3rd resistor connect, sampled voltage is isolated to MCU in the other end output of second resistance, the other end of first capacitor and The other end of 3rd resistor is grounded.Circuit structure of the invention is simple, cost is relatively low, anti-interference ability is relatively strong, use scope is wider.
Description
Technical field
The present invention relates to field of power supplies, in particular to sample circuit is isolated in a kind of voltage.
Background technique
DC voltage isolation sampling is a kind of common voltage sampling circuit, and there are many kinds of different structures in the prior art
DC voltage sample circuit mainly includes following methods: (1) using linear isolation optocoupler mode, the direct current of this structure
Voltage isolation sample circuit meets primary demand, and DC voltage isolation sample circuit generally uses HCNR200/201 series light
Coupling, at high cost, poor anti jamming capability.(2) direct current Hall mode is used, the DC voltage isolation sample circuit of this structure
Circuit structure is complicated, use scope is limited, at high cost.(3) voltage-frequency conversion circuit is used, traditional voltage-frequency conversion circuit is all made of specially
The conversion function of the analog to digital of door controls chip, but the structure of the voltage-frequency conversion circuit based on such chip is generally all
It is more complicated, and higher cost.
Summary of the invention
The technical problem to be solved in the present invention is that in view of the above drawbacks of the prior art, providing a kind of circuit structure letter
Sample circuit is isolated in voltage single, that cost is relatively low, anti-interference ability is relatively strong, use scope is wider.
The technical solution adopted by the present invention to solve the technical problems is: a kind of voltage isolation sample circuit is constructed, including
First metal-oxide-semiconductor, isolating transformer, first resistor, the first inductance, first diode, first capacitor, second resistance, 3rd resistor
And MCU, the grid of first metal-oxide-semiconductor input pwm control signal, one end access of the primary coil of the isolating transformer is defeated
Enter voltage, the other end of the primary coil of the isolating transformer is connect with the drain electrode of first metal-oxide-semiconductor, the first MOS
The source electrode of pipe is grounded, a termination first voltage of the secondary coil of the isolating transformer, the secondary wire of the isolating transformer
One end of circle also passes sequentially through the first resistor and the first inductance is connect with one end of the first diode, and the described 1st
The other end of pole pipe is connect with one end of one end of the first capacitor and second resistance respectively, the other end of the second resistance
It is connect with one end of the 3rd resistor, the other end of second resistance output isolation sampled voltage to the MCU, described the
The other end of one capacitor and the other end of 3rd resistor are grounded.
Voltage of the present invention isolation sample circuit in, further include the second capacitor, one end of second capacitor with
The other end of the second resistance connects, the other end ground connection of second capacitor.
In voltage of the present invention isolation sample circuit, one end of the first diode is anode, described first
The other end of diode is cathode.
In voltage of the present invention isolation sample circuit, the first voltage and the linear pass of the input voltage
System.
In voltage of the present invention isolation sample circuit, the isolation sampled voltage and the first voltage are linear
Relationship.
In voltage of the present invention isolation sample circuit, the isolation sampled voltage and the input voltage are linear
Relationship.
In voltage of the present invention isolation sample circuit, the isolating transformer is switching mode power supply transformer.
Implement voltage isolation sample circuit of the invention, has the advantages that due to being equipped with the first metal-oxide-semiconductor, isolation
Transformation is isolated in transformer, first resistor, the first inductance, first diode, first capacitor, second resistance, 3rd resistor and MCU
Device plays primary and secondary buffer action, and the input voltage of primary coil is transformed into secondary coil, secondary coil by first resistor,
It charges after first inductance and first diode to first capacitor, by choosing suitable first resistor, the first inductance and the first electricity
The value of appearance, may be implemented with the linear corresponding relationship of the input voltage of primary coil, MCU by the voltage value to first capacitor into
Row sampling, and then it is scaled the input voltage of primary coil, realize voltage isolation sampling, circuit structure is simple, cost is relatively low,
Anti-interference ability is relatively strong, use scope is wider.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention without any creative labor, may be used also for those of ordinary skill in the art
To obtain other drawings based on these drawings.
Fig. 1 is the structural schematic diagram that voltage of the present invention is isolated in sample circuit one embodiment.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In voltage of the present invention isolation sampling circuit embodiment, structural schematic diagram such as Fig. 1 of sample circuit is isolated in voltage
It is shown.In Fig. 1, it includes the first metal-oxide-semiconductor Q1, isolating transformer T1, first resistor R1, the first inductance which, which is isolated sample circuit,
L1, first diode D1, first capacitor C1, second resistance R2,3rd resistor R3 and MCU, first diode D1 is two pole of signal
Pipe, the grid of the first metal-oxide-semiconductor Q1 input pwm control signal, and input voltage is accessed in one end of the primary coil of isolating transformer T1
BATT, the other end of the primary coil of isolating transformer T1 are connect with the drain electrode of the first metal-oxide-semiconductor Q1, the source electrode of the first metal-oxide-semiconductor Q1
Ground connection, a termination first voltage V1 of the secondary coil of isolating transformer T1, one end of the secondary coil of isolating transformer T1 is also
It passes sequentially through first resistor R1 and the first inductance L1 is connect with one end of first diode D1, the other end point of first diode D1
It is not connect with one end of one end of first capacitor C1 and second resistance R2, the other end of second resistance R2 and the one of 3rd resistor R3
End connection, other end output isolation sampled voltage BATT_V to the MCU of second resistance R2, the other end and third of first capacitor C1
The other end of resistance R3 is grounded GND.One end of above-mentioned first diode D1 is anode, and the other end of first diode D1 is yin
Pole.Certainly, under some cases of the present embodiment, one end of first diode D1 may be cathode, first diode D1's
The other end is anode, but the circuit structure of at this moment voltage isolation sample circuit also will accordingly change.
The present invention passes through isolating transformer T1, the first inductance L1, first capacitor C1, first resistor R1 and first diode D1
To realize its function.Isolating transformer T1 plays the buffer action between primary coil and secondary coil, and isolating transformer T1 will
The input voltage BATT of primary coil is transformed into secondary coil, and the first voltage V1 of secondary coil passes through first resistor R1, first
Inductance L1 and first diode D1, charges to first capacitor C1.By to first resistor R1, the first inductance L1 and the first electricity
Hold the suitable value of C1 selection, the voltage value and the input voltage of primary coil that first capacitor C1 may be implemented have linear corresponding pass
System.MCU is sampled by the voltage value to first capacitor C1, and then the input voltage for being scaled primary coil (is sampled
Voltage value), realize voltage isolation sampling.The present invention is compared with traditional voltage isolation sampling, and circuit structure is simpler, cost
Lower, flexibility is higher.In addition, isolating transformer T1 is switching mode power supply transformer, do not need additionally to increase transformer, in this way
Further reduce cost.
In the present embodiment, it further includes the second capacitor C2, one end and second of the second capacitor C2 which, which is isolated sample circuit,
The other end of resistance R2 connects, the other end ground connection of the second capacitor C2.
In the present embodiment, first voltage V1 and input voltage BATT are linear, i.e. V1=BATT*K1, K1 are greater than 0
The first proportionality coefficient;Isolation sampled voltage BATT_V and first voltage V1 is linear, i.e. BATT_V=V1*K2, K2 are big
In 0 the second proportionality coefficient;It is linear that sampled voltage BATT_V and input voltage BATT is isolated, i.e. BATT_V=BATT*
K1*K2。
Pwm control signal controls the first metal-oxide-semiconductor Q1 and is in switch state, when the first metal-oxide-semiconductor Q1 conducting, first voltage V1
For high level, first voltage V1 is charged by first resistor R1, the first inductance L1 and first diode D1 to first capacitor C1.When
When first metal-oxide-semiconductor Q1 is closed, first capacitor C1 is discharged by second resistance R2 and 3rd resistor R3.Pass through adjustment parameter
The value of one resistance R1, the first inductance L1, first capacitor C1, second resistance R2 and 3rd resistor R3 can make isolation sampling electricity
BATT_V and first voltage V1 is pressed to keep linear relationship.Such as: the value of first resistor R1 is 5.1K Ω, and the value of the first inductance L1 is
The value of 100uH, first capacitor C1 are 1uf/50V, and the value of second resistance R2 is 300K Ω, and the value of 3rd resistor R3 is 39K Ω.?
In practical application, user can carry out flexible modulation first resistor R1, the first inductance L1, first capacitor C1, according to actual needs
The value of two resistance R2 and 3rd resistor R3.Sampled voltage BATT_V is isolated and is sent into MCU progress sampling processing, according to isolation sampling electricity
The relationship (BATT_V=BATT*K1*K2) for pressing BATT_V and input voltage BATT, can calculate input voltage BATT.
In short, the present invention can accurately show isolation sampled voltage BATT_V, by sampled voltage (input voltage BATT) with
The precision of actual samples voltage is met the requirements, and circuit of the invention is simple, reduces the overall cost of product, and voltage isolation is adopted
Sample circuit has flexible and changeable property, by changing related resistors, the size of capacitor and inductance, can carry out to different DC voltages
Isolation sampling.Circuit stability of the invention is accidentally protected caused by being avoided that in traditional sampling because of isolation optocoupler damage.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (6)
1. sample circuit is isolated in a kind of voltage, which is characterized in that including the first metal-oxide-semiconductor, isolating transformer, first resistor, first
Inductance, first diode, first capacitor, second resistance, 3rd resistor and MCU, the grid input PWM control of first metal-oxide-semiconductor
Input voltage is accessed in one end of signal processed, the primary coil of the isolating transformer, the primary coil of the isolating transformer
The other end is connect with the drain electrode of first metal-oxide-semiconductor, the source electrode ground connection of first metal-oxide-semiconductor, the secondary of the isolating transformer
One termination first voltage of coil, one end of the secondary coil of the isolating transformer also passes sequentially through the first resistor and the
One inductance is connect with one end of the first diode, the other end of the first diode respectively with the first capacitor one
End is connected with one end of second resistance, and the other end of the second resistance is connect with one end of the 3rd resistor, and described second
Sampled voltage is isolated to the MCU, the other end of the first capacitor and the other end of 3rd resistor in the other end output of resistance
It is grounded;
Pwm control signal controls the first metal-oxide-semiconductor and is in switch state, and when the conducting of the first metal-oxide-semiconductor, first voltage is high level,
First voltage is charged by first resistor, the first inductance and first diode to first capacitor;When the first metal-oxide-semiconductor is closed, the
One capacitor is discharged by second resistance and 3rd resistor;By adjustment parameter first resistor, the first inductance, first capacitor,
The value of second resistance and 3rd resistor, so that isolation sampled voltage and first voltage keep linear relationship;
It further include the second capacitor, one end of second capacitor is connect with the other end of the second resistance, second capacitor
The other end ground connection.
2. sample circuit is isolated in voltage according to claim 1, which is characterized in that one end of the first diode is sun
Pole, the other end of the first diode are cathode.
3. sample circuit is isolated in voltage according to claim 1, which is characterized in that the first voltage and input electricity
It is pressed into linear relationship.
4. sample circuit is isolated in voltage according to claim 1, which is characterized in that the isolation sampled voltage and described the
One voltage is linear.
5. sample circuit is isolated in voltage according to claim 1, which is characterized in that the isolation sampled voltage with it is described defeated
It is linear to enter voltage.
6. sample circuit is isolated in voltage according to claim 1, which is characterized in that the isolating transformer is Switching Power Supply
Transformer.
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CN201610780604.1A CN106383258B (en) | 2016-08-31 | 2016-08-31 | Sample circuit is isolated in voltage |
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CN106383258B true CN106383258B (en) | 2019-05-07 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1585889A (en) * | 1976-08-10 | 1981-03-11 | Gen Electric | Load current representation circuits |
CN201523333U (en) * | 2009-10-22 | 2010-07-07 | 卧龙电气集团股份有限公司 | Variable frequency speed regulation input voltage conversion device of dither motor |
CN102023248A (en) * | 2009-09-18 | 2011-04-20 | 哈尔滨九洲电气股份有限公司 | Direct current bus voltage sampling device of medium-voltage frequency converter |
CN104638921A (en) * | 2013-11-08 | 2015-05-20 | 成都英力拓信息技术有限公司 | DC-DC conversion power supply circuit for data collector |
CN205123588U (en) * | 2015-08-11 | 2016-03-30 | 艾欧史密斯(中国)热水器有限公司 | It turns over to keep apart swashs formula high frequency switching power supply and input voltage detection circuitry thereof |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9093910B1 (en) * | 2014-02-14 | 2015-07-28 | Maxim Integrated Products, Inc. | Predictive sampling for primary side sensing in isolated flyback converters |
-
2016
- 2016-08-31 CN CN201610780604.1A patent/CN106383258B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1585889A (en) * | 1976-08-10 | 1981-03-11 | Gen Electric | Load current representation circuits |
CN102023248A (en) * | 2009-09-18 | 2011-04-20 | 哈尔滨九洲电气股份有限公司 | Direct current bus voltage sampling device of medium-voltage frequency converter |
CN201523333U (en) * | 2009-10-22 | 2010-07-07 | 卧龙电气集团股份有限公司 | Variable frequency speed regulation input voltage conversion device of dither motor |
CN104638921A (en) * | 2013-11-08 | 2015-05-20 | 成都英力拓信息技术有限公司 | DC-DC conversion power supply circuit for data collector |
CN205123588U (en) * | 2015-08-11 | 2016-03-30 | 艾欧史密斯(中国)热水器有限公司 | It turns over to keep apart swashs formula high frequency switching power supply and input voltage detection circuitry thereof |
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