CN106376145B - Suitable for the adaptive high-voltage power supply circuit of LED drive chip - Google Patents
Suitable for the adaptive high-voltage power supply circuit of LED drive chip Download PDFInfo
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- CN106376145B CN106376145B CN201611050454.5A CN201611050454A CN106376145B CN 106376145 B CN106376145 B CN 106376145B CN 201611050454 A CN201611050454 A CN 201611050454A CN 106376145 B CN106376145 B CN 106376145B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
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Abstract
The present invention provides a kind of adaptive high-voltage power supply circuit suitable for LED drive chip, including：One high-voltage power supply circuit body, its one-way conduction simultaneously connect a peripheral circuit, for providing a power supply capacitor charging for supplying voltage to peripheral circuit；One sluggish adjustment module, its input terminal connect peripheral circuit with sampled input voltage, the output terminal connection high-voltage power supply circuit body of sluggishness adjustment module；Sluggishness adjustment module exports hysteresis threshold adjustment signal according to the voltage peak of its input terminal, and high-tension circuit body adjusts the electric discharge threshold value of Signal Regulation supply voltage according to hysteresis threshold.A kind of adaptive high-voltage power supply circuit suitable for LED drive chip of the present invention, can be adaptively adjusted the electric discharge threshold value of supply voltage, stop the charging to power supply capacitor when high pressure is positioned at a high position, so as to reduce the loss of power supply circuit itself；At the same time by way of metal-oxide-semiconductor series connection, more traditional Diode series mode is more reliable.
Description
Technical field
The present invention relates to high-voltage power supply circuit field, more particularly to a kind of adaptive high pressure suitable for LED drive chip
Power supply circuit.
Background technology
Efficiency is one of Key Performance Indicator of Switching Power Supply, and the loss for reducing high-voltage power supply circuit itself is to improve effect
The important measures of rate, but the problem of larger is lost in existing high-voltage power supply circuit generally existing.Existing high-voltage power supply circuit is straight
Connect with it is rectified after AC-input voltage be connected, output supply current to LED chip power supply capacitor.Due to higher exchange
Input voltage and larger supply current cause the loss of high-voltage power supply circuit in itself larger.
In addition, in high-voltage power supply circuit, when ac input voltage drops to below supply voltage, power supply is electric in order to prevent
Hold to the anti-sink current of AC input, one-way conduction is often realized using Diode series mode.But, since supply current is larger
Seeking the diode current flow area of series connection needs reverse leakage current and parasitic triode sufficiently large, while that also increase the diode
Influence, reduce the reliability of circuit.
Fig. 1 is referred to, a kind of high-voltage power supply circuit of existing LED drive chip, its high-voltage power supply circuit body 1 ' is even
Connect a peripheral circuit 4 '.Wherein, high-voltage power supply circuit body 1 ' include a connected high-voltage junction field-effect transistor JFET ',
One first metal-oxide-semiconductor M0 ', a diode D1, a pull-up resistor R0 ', one second metal-oxide-semiconductor M1 ' and a hysteresis comparator 11 '；Periphery
Circuit 4 ' includes：One AC power AC ', a rectifier bridge 41 ', an input capacitance Cin ' and a power supply capacitor Cvcc '.Wherein, AC
The rectified bridge 41 ' of input voltage exports the drain terminal that high pressure HV ' is added in high-voltage junction field-effect transistor JFET ', high-voltage junction afterwards
The grounded-grid of field-effect transistor JFET ', its source are filled by the first metal-oxide-semiconductor M0 ', diode D1 to power supply capacitor Cvcc '
Electricity.The output control signal psdis ' compared with internal reference voltage vref ' by supply voltage vcc ' of hysteresis comparator 11 '.Control
Signal psdis ' processed drives the second metal-oxide-semiconductor M1 ' to realize and the break-make of the first metal-oxide-semiconductor M0 ' is controlled.Wherein diode D1 ensures electric current
Can only one-way conduction.It can be seen that it has higher AC-input voltage and larger supply current vcc ', high voltage supply will be caused
Circuit in itself 1 ' loss it is larger.Meanwhile the circuit realizes one-way conduction by diode D1 series systems, but due to power supply electricity
Flow larger, it is desirable to which the diode D1 conducting areas of series connection need to be sufficiently large, while also increases the reverse leakage current of diode D1
With the influence of parasitic triode, the reliability of circuit is reduced.
Its circuit key node oscillogram can be found in Fig. 2, when supply voltage vcc ' be higher by than internal reference voltage vref ' it is pre-
If comparator hysteresis threshold value (reach the electric discharge threshold value of supply voltage vcc ' --- internal reference voltage vref ' is compared with
The sum of device hysteresis threshold) when, output control signal psdis'=1, and the first metal-oxide-semiconductor M0 ' is turned off, supply voltage vcc ' starts to put
Electricity declines；When supply voltage vcc ' is less than internal reference voltage vref ', output control signal psdis '=0, conducting first
Metal-oxide-semiconductor M0 ', supply voltage vcc ' restart charging and rise.As it can be seen that the prior art can only monitor vcc ' and vref in real time '
Difference, to judge whether to need to charge, but cannot judge the height of present input voltage, if still given when input voltage is higher
Power supply capacitor Cvcc ' chargings can then cause charging circuit power consumption itself larger.
The content of the invention
For above-mentioned deficiency of the prior art, the present invention provides a kind of adaptive high pressure suitable for LED drive chip
Power supply circuit, can be adaptively adjusted the charging process to power supply capacitor, to stop when input voltage is high to power supply capacitor
Charging, so as to reduce the loss of power supply circuit itself.
To achieve these goals, the present invention provides a kind of adaptive high-voltage power supply circuit suitable for LED drive chip,
Including：
One high-voltage power supply circuit body, the high-voltage power supply circuit body one-way conduction simultaneously connect a peripheral circuit, are used for
One power supply capacitor charging for supplying voltage to the peripheral circuit is provided；Wherein, further include：
One sluggish adjustment module, the input terminal of the sluggish adjustment module connect the peripheral circuit to sample input electricity
Pressure, the output terminal of the sluggish adjustment module connect the high-voltage power supply circuit body；The sluggish adjustment module is defeated according to its
The voltage peak for entering end exports hysteresis threshold adjustment signal, and the high-tension circuit body adjusts signal according to the hysteresis threshold
Adjust the electric discharge threshold value of the supply voltage.
Preferably, the high-voltage power supply circuit body includes：
One high-voltage junction field-effect transistor, the grid of the high-voltage junction field-effect transistor and drain electrode connection are described outer
Enclose circuit；
One first metal-oxide-semiconductor, the drain electrode of first metal-oxide-semiconductor connect the source electrode of the high-voltage junction field-effect transistor；
One one-way conduction part, the input terminal of the one-way conduction part are connected to the source electrode of first metal-oxide-semiconductor, and output terminal connects
It is connected between the top crown of the power supply capacitor, the bottom crown ground connection of the power supply capacitor；
One pull-up resistor, the pull-up resistor are connected to the source electrode and described first of the high-voltage junction field-effect transistor
Between the grid of metal-oxide-semiconductor；
One second metal-oxide-semiconductor, the drain electrode of second metal-oxide-semiconductor connect the grid of first metal-oxide-semiconductor, second metal-oxide-semiconductor
Source electrode ground connection；And
One hysteresis comparator, the normal phase input end of the hysteresis comparator connect the output terminal of the one-way conduction part, institute
The inverting input for stating hysteresis comparator connects a reference voltage input terminal, the control signal connection institute of the hysteresis comparator
The output terminal of sluggish adjustment module is stated, the output terminal of the hysteresis comparator connects the grid of second metal-oxide-semiconductor.
Preferably, the one-way conduction part uses one the 3rd metal-oxide-semiconductor, the source electrode connection described first of the 3rd metal-oxide-semiconductor
The source electrode of metal-oxide-semiconductor, the drain electrode of the 3rd metal-oxide-semiconductor connect the top crown of the power supply capacitor and the positive of the hysteresis comparator
Input terminal, the grid of the 3rd metal-oxide-semiconductor connect the grid of first metal-oxide-semiconductor.
Preferably, the sluggish adjustment module includes：It is sequentially connected in series the input terminal in the sluggish adjustment module and output
A first switch, a second switch and a peak comparator between end, the normal phase input end connection institute of the peak comparator
Second switch is stated, the inverting input of the peak comparator receives certain threshold voltage, and the output terminal of the peak comparator connects
Connect the hysteresis comparator；
One first phase inverter is further included, the input terminal of first phase inverter connects the first switch, and described first is anti-
The output terminal of phase device connects the second switch；
One first adjustment capacitance, described first adjustment capacitance one end be connected to the first switch and the second switch it
Between, the first adjustment capacitance other end ground connection；And
One second adjustment capacitance, described second adjustment capacitance one end are connected to the second switch and the peak comparator
Between, the second adjustment capacitance other end ground connection.
Preferably, the peripheral circuit includes：
One AC power；
One rectifier bridge, the input terminal of the rectifier bridge connect the output terminal of the AC power, the output of the rectifier bridge
End connects the drain electrode of the high-voltage junction field-effect transistor；
One input capacitance, the top crown of the input capacitance connect the output terminal of the rectifier bridge, the input capacitance
Bottom crown is grounded and connects the grid of the high-voltage junction field-effect transistor；
The power supply capacitor；
One transformer, the output terminal of the primary side high-end connection rectifier bridge of the transformer；
One the 4th metal-oxide-semiconductor, draining for the 4th metal-oxide-semiconductor connects the primary side low side of the transformer, described in source electrode connection
The input terminal of sluggishness adjustment module；
One sampling resistor, described sampling resistor one end are connected to the 4th metal-oxide-semiconductor source electrode, the sampling resistor other end
Ground connection；And
One output capacitance, the output capacitance are in parallel with the secondary of the transformer；The output capacitance and a LED load
It is in parallel.
Preferably, the peripheral circuit further includes an output diode, and the cathode of the output diode connects the change
The secondary of depressor is high-end；The anode of the output diode connects the output capacitance.
Preferably, a switching signal generation circuit is further included, described in the output terminal connection of the switching signal generation circuit
The grid of 4th metal-oxide-semiconductor.
Preferably, the hysteresis comparator includes：
One first current source, the first-class potential end of input terminal connection of first current source；
One the 5th metal-oxide-semiconductor, the source electrode of the 5th metal-oxide-semiconductor connect the output terminal of first current source, the 5th MOS
The grid of pipe connects the reference voltage input terminal；
One the 6th metal-oxide-semiconductor, the source electrode of the 6th metal-oxide-semiconductor connect the output terminal of first current source, the 6th MOS
The grid of pipe connects the drain electrode of the 3rd metal-oxide-semiconductor；
One the 7th metal-oxide-semiconductor, the drain electrode of the 7th metal-oxide-semiconductor connect the drain electrode of the 5th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor
Source electrode ground connection；
One the 8th metal-oxide-semiconductor, the drain electrode of the 8th metal-oxide-semiconductor connect the drain electrode of the 6th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor
Source electrode ground connection, the grid of the 8th metal-oxide-semiconductor connects the grid of the 7th metal-oxide-semiconductor；
One the 9th metal-oxide-semiconductor, the drain electrode of the 9th metal-oxide-semiconductor connect the drain electrode of the 5th metal-oxide-semiconductor；
The tenth metal-oxide-semiconductor, the drain electrode of the tenth metal-oxide-semiconductor connect the source electrode of the 9th metal-oxide-semiconductor, the tenth metal-oxide-semiconductor
Source electrode ground connection, the grid of the tenth metal-oxide-semiconductor connects the grid of the 7th metal-oxide-semiconductor；
The 11st metal-oxide-semiconductor, the source electrode of drain electrode connection the 9th metal-oxide-semiconductor of the 11st metal-oxide-semiconductor, the described 11st
The output terminal of the grid connection sluggish adjustment module of metal-oxide-semiconductor；
The 12nd metal-oxide-semiconductor, drain electrode connection the 11st metal-oxide-semiconductor source electrode of the 12nd metal-oxide-semiconductor, the described 12nd
The source electrode ground connection of metal-oxide-semiconductor, the grid of the 12nd metal-oxide-semiconductor connect the grid of the 7th metal-oxide-semiconductor；
One second current source, the input terminal of second current source connect the equipotential；
The 13rd metal-oxide-semiconductor, the drain electrode of the 13rd metal-oxide-semiconductor connect the output terminal of second current source, and described the
The source electrode ground connection of 13 metal-oxide-semiconductors, the grid of the 13rd metal-oxide-semiconductor connect the drain electrode of the 6th metal-oxide-semiconductor；
One second phase inverter, the input terminal of second phase inverter connect the output terminal of second current source, and described the
The output terminal of two phase inverters connects the drain electrode of the 9th metal-oxide-semiconductor；
One the 3rd phase inverter, the input terminal of the 3rd phase inverter connect the output terminal of second phase inverter, and described the
The output terminal of three phase inverters connects the grid of second metal-oxide-semiconductor.
The present invention makes it have following beneficial effect as a result of above technical scheme：
Sluggishness adjustment module is used for the sluggish threshold of the voltage peak adjustment hysteresis comparator according to the input voltage of its sampling
Value, judges whether input voltage is in high pressure so as to fulfill by detecting sampled voltage, and can be adaptively adjusted power supply electricity late
The electric discharge threshold value of pressure, stops the charging to power supply capacitor when rectification bridge output end voltage is in high pressure, so as to reduce power supply electricity
The loss on road itself.In addition, realize that the electric current of supply access is unidirectionally led by the way of the first metal-oxide-semiconductor and the series connection of the 3rd metal-oxide-semiconductor
It is logical, it ensure that the reliability of circuit.
Brief description of the drawings
Fig. 1 is a kind of existing electrical block diagram of the high-voltage power supply circuit of LED drive chip；
Fig. 2 is a kind of key node comparison of wave shape figure of existing high-voltage power supply circuit of LED drive chip；
Fig. 3 is that a kind of structure of adaptive high-voltage power supply circuit suitable for LED drive chip of the embodiment of the present invention is shown
It is intended to；
Fig. 4 is the electrical block diagram of the sluggish adjustment module of the embodiment of the present invention；
Fig. 5 is the internal circuit configuration schematic diagram of the hysteresis comparator of the embodiment of the present invention；
Fig. 6 is that the work wave of the embodiment of the present invention compares figure.
Embodiment
Below according to attached drawing 3-6, presently preferred embodiments of the present invention is provided, and is described in detail, makes to be better understood when
Function, the feature of the present invention.
Referring to Fig. 3, a kind of adaptive high-voltage power supply circuit suitable for LED drive chip of the present invention, including one is high
The sluggish adjustment 2 and one switching signal generation circuit 3 of module of power supply circuit body 1, one is pressed, wherein, the output of sluggishness adjustment module 2
End connection high-voltage power supply circuit body 1, high-voltage power supply circuit body 1 is connected outside one with the output terminal of switching signal generation circuit 3
Enclose circuit 4.
The high-voltage power supply circuit body 1 is used to charge to a power supply capacitor Cvcc of peripheral circuit 4, its one-way conduction, bag
Include a high-voltage junction field-effect transistor JFET, one first metal-oxide-semiconductor M0, an one-way conduction part, one second metal-oxide-semiconductor M1, a pull-up
Resistance R0 and a hysteresis comparator 11.
Wherein, the grid of high-voltage junction field-effect transistor JFET and drain electrode connection peripheral circuit 4.First metal-oxide-semiconductor M0's
The source electrode js of drain electrode connection high-voltage junction field-effect transistor JFET simultaneously receives the output of high-voltage junction field-effect transistor JFET
Voltage.In the present embodiment, one-way conduction part uses one the 3rd metal-oxide-semiconductor M2, in other embodiments, can also use diode, but
Using the present embodiment the 3rd metal-oxide-semiconductor M2 when compared to the reliability that can strengthen circuit using diode.The source of 3rd metal-oxide-semiconductor M2
Pole connects the source electrode of the first metal-oxide-semiconductor M0, the top crown of the drain electrode connection power supply capacitor Cvcc of the 3rd metal-oxide-semiconductor M2, power supply capacitor
The bottom crown ground connection of Cvcc.The grid of 3rd metal-oxide-semiconductor M2 connects the grid of the first metal-oxide-semiconductor M0.Pull-up resistor R0 is connected to high pressure
Between the grid of the source electrode of junction field effect transistor JFET and the first metal-oxide-semiconductor M0.The drain electrode connection first of second metal-oxide-semiconductor M1
The grid of metal-oxide-semiconductor M0, the source electrode ground connection of the second metal-oxide-semiconductor M1.The normal phase input end of hysteresis comparator 11 connects the 3rd metal-oxide-semiconductor M2's
Drain and receive the supply voltage vcc of the drain electrode output of the 3rd metal-oxide-semiconductor M2, the inverting input connection one of hysteresis comparator 11 is joined
Voltage input end is examined, reference voltage input terminal inputs a reference voltage vref, and the output terminal of hysteresis comparator 11 connects the 2nd MOS
The grid and output control signal psdis of pipe M1.
Wherein, peripheral circuit 4 includes：One AC power AC, a rectifier bridge 41, an input capacitance Cin, power supply capacitor
Cvcc, a transformer T1, one the 4th metal-oxide-semiconductor M3, a sampling resistor Rcs, an output diode D0 and an output capacitance Cout.Its
In, the output terminal of the input terminal connection AC power AC of rectifier bridge 41.The output terminal connection input capacitance Cin's of rectifier bridge 41 is upper
The drain electrode of pole plate and high-voltage junction field-effect transistor JFET, and export high pressure HV.The bottom crown of input capacitance Cin is grounded and connects
Connect the grid of high-voltage junction field-effect transistor JFET；The output terminal of the high-end connection rectifier bridge 41 of primary side of transformer T1；4th
The primary side low side of the drain electrode connection transformer T1 of metal-oxide-semiconductor M3；The grid connecting valve signal generating circuit 3 of 4th metal-oxide-semiconductor M3
Output terminal, switching signal generation circuit 3 export the grid that first switch signal switch drives the 4th metal-oxide-semiconductor M3, are opened first
The sampling to sampled voltage CS is realized in the 4th metal-oxide-semiconductor M3 of OFF signal switch=1 conductings；Sampling resistor Rcs one end is connected to
Four metal-oxide-semiconductor M3 source electrodes, the sampling resistor Rcs other ends are grounded, and the voltage on sampling resistor Rcs is sampled voltage CS；Export two poles
The secondary of the cathode connection transformer T1 of pipe D0 is high-end；Output capacitance Cout is connected to output diode D0 anode and transformer T1
Secondary low side between；Output capacitance Cout is in parallel with a LED load.
Refer to Fig. 3, Fig. 4, sluggishness adjustment module 2 include sequentially connected first switch S1, a second switch S2 and
One peak comparator 21, first switch S1 receive sampled voltage CS, the normal phase input end connection second switch of peak comparator 21
S2, the inverting input of peak comparator 21 receive certain threshold voltage, and fixed value voltage size is 500mV in the present embodiment, peak value
The control signal of the output terminal connection hysteresis comparator 11 of comparator 21 simultaneously exports hysteresis threshold adjustment signal hcspk.It is sluggish
Adjustment module 2 further includes an one first phase inverter 22, one first adjustment capacitance C0 and second adjustment capacitance C1.Wherein, first is anti-
The input terminal connection first switch S1 of phase device 22 simultaneously receives first switch signal switch, the output terminal connection of the first phase inverter 22
Second switch S2, and export a second switch signal switchb.First adjustment capacitance C0 one end is connected to first switch S1 and the
Between two switch S2, the first adjustment capacitance C0 other end ground connection, the voltage of the first adjustment capacitance C0 top crowns is CS1.Second adjusts
Whole capacitance C1 one end is connected between second switch S2 and peak comparator 21, second adjustment capacitance C1 other ends ground connection, and second
The voltage for adjusting capacitance C1 top crowns is CS2.It is slow that sluggishness adjustment module 2 is adjusted according to the peak value of the sampled voltage CS of its input terminal
The hysteresis threshold of stagnant comparator 11, and then realize the adjusting to supply voltage.
During first switch signal switch=1, first switch S1 conductings, the top crown voltage of the first adjustment capacitance C0
When CS1 following sampling voltage CS using first switch signal switch upsets are 0, the top crown voltage of the first adjustment capacitance C0
CS1 is maintained at the peak value of sampled voltage CS, while first switch S1 is turned off, second switch S2 conductings.Due to second adjustment electricity
Hold C1 to be charged by the first adjustment capacitance C0 much smaller than the first adjustment capacitance C0, electric charge redistribution, second adjustment capacitance C1, second
The voltage CS2 of adjustment capacitance C1 top crowns is approximately equal to the top crown voltage CS1 of the first adjustment capacitance C0.Each switch periods the
The sampled voltage CS peak values that one adjustment capacitance C0 is sampled during first switch signal switch=1 can all be believed in first switch
Second adjustment capacitance C1 is flushed to during number switch=0, therefore the voltage CS2 of second adjustment capacitance C1 top crowns is sampled voltage
The peak envelope of CS.It will reflect the voltage CS2 and definite value electricity of the second adjustment capacitance C1 top crowns of sampled voltage CS peak envelopes
Pressure 500mV compares, when sampled voltage CS peak values are more than 500mV, output hysteresis threshold adjustment signal hcspk=1.
Referring to Fig. 5, hysteresis comparator 11 includes：One first current source I0, one the 5th metal-oxide-semiconductor M4, one the 6th metal-oxide-semiconductor
M5, one the 7th metal-oxide-semiconductor M6, one the 8th metal-oxide-semiconductor M7, one the 9th metal-oxide-semiconductor M8,1 the tenth metal-oxide-semiconductor M9,1 the 11st metal-oxide-semiconductor M10,
The a 12nd metal-oxide-semiconductor M11, one second current source I1,1 the 13rd metal-oxide-semiconductor M12, one second phase inverter 111 and one the 3rd are anti-phase
Device 112.Wherein, the first-class potential end of input terminal connection of the first current source I0.The source electrode of 5th metal-oxide-semiconductor M4 connects the first current source
The output terminal of I0, the grid connection reference voltage input terminal of the 5th metal-oxide-semiconductor M4.The source electrode of 6th metal-oxide-semiconductor M5 connects the first electric current
The output terminal of source I0, the normal phase input end of the grid connection hysteresis comparator 11 of the 6th metal-oxide-semiconductor M5.The drain electrode of 7th metal-oxide-semiconductor M6
Connect the drain electrode of the 5th metal-oxide-semiconductor M4, the source electrode ground connection of the 7th metal-oxide-semiconductor M6.The drain electrode of 8th metal-oxide-semiconductor M7 connects the 6th metal-oxide-semiconductor M5
Drain electrode, the source electrode ground connection of the 8th metal-oxide-semiconductor M7, the grid of the 8th metal-oxide-semiconductor M7 connects the grid of the 7th metal-oxide-semiconductor M6.9th metal-oxide-semiconductor
The drain electrode of the 5th metal-oxide-semiconductor M4 of drain electrode connection of M8.The source electrode of the 9th metal-oxide-semiconductor M8 of drain electrode connection of tenth metal-oxide-semiconductor M9, the tenth MOS
The source electrode ground connection of pipe M9, the grid of the tenth metal-oxide-semiconductor M9 connect the grid of the 7th metal-oxide-semiconductor M6.The drain electrode of 11st metal-oxide-semiconductor M10 connects
The source electrode of the 9th metal-oxide-semiconductor M8 is connect, the control signal of the grid connection hysteresis comparator 11 of the 11st metal-oxide-semiconductor M10, receives sluggish
Threshold adjustment signal hcspk.The drain electrode of 12nd metal-oxide-semiconductor M11 connects the 11st metal-oxide-semiconductor M10 source electrodes, the 12nd metal-oxide-semiconductor M11's
Source electrode is grounded, and the grid of the 12nd metal-oxide-semiconductor M11 connects the grid of the 7th metal-oxide-semiconductor M6.Input terminal connection of second current source I1 etc.
Current potential.The output terminal of the second current source I1 of drain electrode connection of 13rd metal-oxide-semiconductor M12, the source electrode ground connection of the 13rd metal-oxide-semiconductor M12, the
The grid of 13 metal-oxide-semiconductor M12 connects the drain electrode of the 6th metal-oxide-semiconductor M5.The input terminal of second phase inverter 111 connects the second current source I1
Output terminal, the output terminal of the second phase inverter 111 connects the drain electrode of the 9th metal-oxide-semiconductor M8.The input terminal connection of 3rd phase inverter 112
The output terminal of second phase inverter 111, the output terminal of the output terminal connection hysteresis comparator 11 of the 3rd phase inverter 112.
Hysteresis comparator 11 adjusts signal hcspk by hysteresis threshold and whether controls the 11st metal-oxide-semiconductor M10 by the 12nd
The hysteresis voltage of metal-oxide-semiconductor M11 is added in the existing hysteresis voltage determined by the tenth metal-oxide-semiconductor M9, so as to fulfill hysteresis threshold
Adjust increase controls of the signal hcspk to hysteresis voltage (increase of the electric discharge threshold value i.e. to supply voltage vcc controls).If
Hysteresis threshold adjusts signal hcspk=0, then hysteresis comparator 11 keeps original hysteresis threshold determined by the tenth metal-oxide-semiconductor M9
(i.e. the electric discharge threshold value of supply voltage vcc is constant), if hysteresis threshold adjusts signal hcspk=1, comparator is original
Hysteresis threshold (i.e. the electric discharge threshold value increase of supply voltage vcc) is further added by the basis of hysteresis threshold.Wherein hysteresis comparator 11
Initial hysteresis threshold be v0, it is v1 that hysteresis comparator 11, which increases the increment hysteresis threshold after hysteresis threshold,.
A kind of referring to Fig. 3, course of work of adaptive high-voltage power supply circuit suitable for LED drive chip of the present invention
It is as follows：
The HV that rectifier bridge 41 exports is added in the drain electrode of high-voltage junction field-effect transistor JFET, high-voltage junction field effect transistor
The source voltage of pipe JFET is limited in the pinch-off threshold of high-voltage junction field-effect transistor JFET.When supply voltage vcc is small
When reference voltage vref, hysteresis comparator 11 output control signal psdis=0's, the first metal-oxide-semiconductor M0 and the 3rd metal-oxide-semiconductor M2
Grid is pulled up resistance R0 pull-up, and supply access conducting simultaneously charges power supply capacitor Cvcc.With the rising of supply voltage vcc,
When supply voltage vcc adds the sum of hysteresis threshold higher than reference voltage vref, 11 output control signal psdis=of hysteresis comparator
The grid of 1, the first metal-oxide-semiconductor M0 and the 3rd metal-oxide-semiconductor M2 are pulled down by the second metal-oxide-semiconductor M1, and supply access shut-off, supply voltage vcc stops
Only charge and begin to decline, the repetition charge and discharge process of sawtooth waveforms is presented in supply voltage vcc.When first switch signal switch drives
During dynamic 4th metal-oxide-semiconductor M3 conductings, if the peak value of the sampled voltage CS on sampling resistor Rcs is more than 500mV, sluggishness adjustment mould
Block 2 exports hysteresis threshold adjustment signal hcspk=1 so that the hysteresis threshold of hysteresis comparator 11 becomes larger, namely supply voltage
The electric discharge threshold value of vcc becomes larger, and causes supply voltage vcc just to turn off supply access when rising to high voltage.At high pressure HV
Between high period, supply voltage vcc at the higher level slowly electric discharge drop to reference voltage vref time it is longer,
High pressure HV does not charge power supply capacitor Cvcc at this time.Therefore when high pressure HV is in high level, high-voltage power supply circuit own loss
It can be greatly reduced.
The one-way conduction function of high-voltage power supply circuit is realized by the first metal-oxide-semiconductor M0 and the 3rd metal-oxide-semiconductor M2 that connects.Due to
The source electrode of three metal-oxide-semiconductor M2 is connected with the source of the first metal-oxide-semiconductor M0, the substrate of the first metal-oxide-semiconductor M0 and the 3rd metal-oxide-semiconductor M2 again respectively with
Respective source electrode is connected, therefore the first metal-oxide-semiconductor M0 and the 3rd metal-oxide-semiconductor M2 is connected equivalent to two back-to-back diodes are formed,
The anode of the two diodes is connected with the source of the first metal-oxide-semiconductor M0 and the 3rd metal-oxide-semiconductor M2.From supply voltage vcc to high pressure HV,
The diode of 3rd metal-oxide-semiconductor M2 is reverse-biased so as to block the path of reverse sink current, it is ensured that one-way conduction.
A kind of working waveform figure of adaptive high-voltage power supply circuit suitable for LED drive chip refers in the present embodiment
Fig. 6.High pressure HV is during the lowest point, hysteresis threshold adjustment signal hcspk=0, at the beginning of supply voltage vcc is less than reference voltage vref+
Beginning hysteresis threshold v0, control signal psdis=0, supply voltage vcc persistently charge rising.When supply voltage vcc is higher than with reference to electricity
The first hysteresis thresholds of vref+ v0, control signal psdis=1, supply voltage vcc continuous discharge is pressed to decline.As supply voltage vcc
When dropping below reference voltage vref, control signal psdis=0, supply voltage vcc restart charging and rise, in repetition
State process.
When HV high pressures, when sampled voltage CS is more than 500mV, hysteresis threshold adjustment signal hcspk=1, supply voltage vcc is low
In reference voltage vref+ increments hysteresis threshold v1, control signal psdis=0, supply voltage vcc persistently charge rising.Work as power supply
When voltage vcc is higher than its threshold value (i.e. reference voltage vref+ increments hysteresis threshold v1) under high pressure, control signal psdis
=1, supply voltage vcc continuous discharge decline.When supply voltage vcc drops below reference voltage vref, control signal psdis
=0, supply voltage vcc restart charging and rise, and repeat the above process.Since electric original levels are higher under supply voltage vcc,
The time that supply voltage vcc is slowly drop down to reference voltage vref is longer, so do not charge during HV high pressures to power supply capacitor Cvcc,
So as to reduce power supply circuit own loss.
Record above, be only presently preferred embodiments of the present invention, be not limited to the scope of the present invention, of the invention is upper
Stating embodiment can also make a variety of changes.What i.e. every claims and description according to the present patent application were made
Simply, equivalent changes and modifications, falls within the claims of patent of the present invention.
Claims (7)
- A kind of 1. adaptive high-voltage power supply circuit suitable for LED drive chip, it is characterised in that including：One high-voltage power supply circuit body, the high-voltage power supply circuit body one-way conduction simultaneously connects a peripheral circuit, for providing One supplies voltage to the power supply capacitor charging of the peripheral circuit；AndOne sluggish adjustment module, the input terminal of the sluggish adjustment module connect the peripheral circuit with sampled input voltage, institute The output terminal for stating sluggish adjustment module connects the high-voltage power supply circuit body；The sluggish adjustment module is according to its input terminal Voltage peak exports hysteresis threshold adjustment signal, and the high-voltage power supply circuit body adjusts signal tune according to the hysteresis threshold Save the electric discharge threshold value of the supply voltage；Wherein, the high-voltage power supply circuit body includes：One high-voltage junction field-effect transistor, the grid of the high-voltage junction field-effect transistor and the drain electrode connection periphery electricity Road；One first metal-oxide-semiconductor, the drain electrode of first metal-oxide-semiconductor connect the source electrode of the high-voltage junction field-effect transistor；One one-way conduction part, the input terminal of the one-way conduction part are connected to the source electrode of first metal-oxide-semiconductor, and output terminal is connected to The top crown of the power supply capacitor, the bottom crown ground connection of the power supply capacitor；One pull-up resistor, the pull-up resistor are connected to the source electrode of the high-voltage junction field-effect transistor and the first MOS Between the grid of pipe；One second metal-oxide-semiconductor, the drain electrode of second metal-oxide-semiconductor connect the grid of first metal-oxide-semiconductor, the source of second metal-oxide-semiconductor Pole is grounded；AndOne hysteresis comparator, the normal phase input end of the hysteresis comparator connects the output terminal of the one-way conduction part, described slow The inverting input of stagnant comparator connects a reference voltage input terminal, and the control signal connection of the hysteresis comparator is described late The output terminal of stagnant adjustment module, the output terminal of the hysteresis comparator connect the grid of second metal-oxide-semiconductor.
- 2. the adaptive high-voltage power supply circuit according to claim 1 suitable for LED drive chip, it is characterised in that institute To state one-way conduction part and use one the 3rd metal-oxide-semiconductor, the source electrode of the 3rd metal-oxide-semiconductor connects the source electrode of first metal-oxide-semiconductor, and described the The drain electrode of three metal-oxide-semiconductors connects the top crown of the power supply capacitor and the normal phase input end of the hysteresis comparator, the 3rd MOS The grid of pipe connects the grid of first metal-oxide-semiconductor.
- 3. the adaptive high-voltage power supply circuit according to claim 2 suitable for LED drive chip, it is characterised in that institute Stating sluggish adjustment module includes：One first be sequentially connected in series between the input terminal and output terminal of the sluggish adjustment module opens Close, a second switch and a peak comparator, the normal phase input end of the peak comparator connect the second switch, the peak The inverting input for being worth comparator receives certain threshold voltage, and the output terminal of the peak comparator connects the hysteresis comparator；One first phase inverter is further included, the input terminal of first phase inverter connects the first switch, first phase inverter Output terminal connect the second switch；One first adjustment capacitance, described first adjustment capacitance one end are connected between the first switch and the second switch, The first adjustment capacitance other end ground connection；AndOne second adjustment capacitance, described second adjustment capacitance one end be connected to the second switch and the peak comparator it Between, the second adjustment capacitance other end ground connection.
- 4. the adaptive high-voltage power supply circuit according to claim 3 suitable for LED drive chip, it is characterised in that institute Stating peripheral circuit includes：One AC power；One rectifier bridge, the input terminal of the rectifier bridge connect the output terminal of the AC power, and the output terminal of the rectifier bridge connects Connect the drain electrode of the high-voltage junction field-effect transistor；One input capacitance, the top crown of the input capacitance connect the output terminal of the rectifier bridge, the lower pole of the input capacitance Plate earthing and the grid for connecting the high-voltage junction field-effect transistor；The power supply capacitor；One transformer, the output terminal of the primary side high-end connection rectifier bridge of the transformer；One the 4th metal-oxide-semiconductor, the drain electrode of the 4th metal-oxide-semiconductor connect the primary side low side of the transformer, and source electrode connects the sluggishness Adjust the input terminal of module；One sampling resistor, described sampling resistor one end are connected to the 4th metal-oxide-semiconductor source electrode, another termination of sampling resistor Ground；AndOne output capacitance, the output capacitance are in parallel with the secondary of the transformer；The output capacitance and a LED load are simultaneously Connection.
- 5. the adaptive high-voltage power supply circuit according to claim 4 suitable for LED drive chip, it is characterised in that institute State peripheral circuit and further include an output diode, the secondary of the cathode connection transformer of the output diode is high-end；Institute The anode for stating output diode connects the output capacitance.
- 6. the adaptive high-voltage power supply circuit according to claim 5 suitable for LED drive chip, it is characterised in that also Including a switching signal generation circuit, the output terminal of the switching signal generation circuit connects the grid of the 4th metal-oxide-semiconductor.
- 7. the adaptive high-voltage power supply circuit according to claim 3 suitable for LED drive chip, it is characterised in that institute Stating hysteresis comparator includes：One first current source, the first-class potential end of input terminal connection of first current source；One the 5th metal-oxide-semiconductor, the source electrode of the 5th metal-oxide-semiconductor connect the output terminal of first current source, the 5th metal-oxide-semiconductor Grid connects the reference voltage input terminal；One the 6th metal-oxide-semiconductor, the source electrode of the 6th metal-oxide-semiconductor connect the output terminal of first current source, the 6th metal-oxide-semiconductor Grid connects the drain electrode of the 3rd metal-oxide-semiconductor；One the 7th metal-oxide-semiconductor, the drain electrode of the 7th metal-oxide-semiconductor connect the drain electrode of the 5th metal-oxide-semiconductor, the source of the 7th metal-oxide-semiconductor Pole is grounded；One the 8th metal-oxide-semiconductor, the drain electrode of the 8th metal-oxide-semiconductor connect the drain electrode of the 6th metal-oxide-semiconductor, the source of the 8th metal-oxide-semiconductor Pole is grounded, and the grid of the 8th metal-oxide-semiconductor connects the grid of the 7th metal-oxide-semiconductor；One the 9th metal-oxide-semiconductor, the drain electrode of the 9th metal-oxide-semiconductor connect the drain electrode of the 5th metal-oxide-semiconductor；The tenth metal-oxide-semiconductor, the drain electrode of the tenth metal-oxide-semiconductor connect the source electrode of the 9th metal-oxide-semiconductor, the source of the tenth metal-oxide-semiconductor Pole is grounded, and the grid of the tenth metal-oxide-semiconductor connects the grid of the 7th metal-oxide-semiconductor；The 11st metal-oxide-semiconductor, the drain electrode of the 11st metal-oxide-semiconductor connect the source electrode of the 9th metal-oxide-semiconductor, the 11st MOS The output terminal of the grid connection sluggish adjustment module of pipe；The 12nd metal-oxide-semiconductor, the drain electrode of the 12nd metal-oxide-semiconductor connect the 11st metal-oxide-semiconductor source electrode, the 12nd MOS The source electrode ground connection of pipe, the grid of the 12nd metal-oxide-semiconductor connect the grid of the 7th metal-oxide-semiconductor；One second current source, the input terminal of second current source connect the equipotential；The 13rd metal-oxide-semiconductor, the output terminal of drain electrode connection second current source of the 13rd metal-oxide-semiconductor, the described 13rd The source electrode ground connection of metal-oxide-semiconductor, the grid of the 13rd metal-oxide-semiconductor connect the drain electrode of the 6th metal-oxide-semiconductor；One second phase inverter, the input terminal of second phase inverter connect the output terminal of second current source, and described second is anti- The output terminal of phase device connects the drain electrode of the 9th metal-oxide-semiconductor；AndOne the 3rd phase inverter, the input terminal of the 3rd phase inverter connect the output terminal of second phase inverter, and the described 3rd is anti- The output terminal of phase device connects the grid of second metal-oxide-semiconductor.
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| CN201611050454.5A CN106376145B (en) | 2016-11-24 | 2016-11-24 | Suitable for the adaptive high-voltage power supply circuit of LED drive chip |
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| CN201611050454.5A CN106376145B (en) | 2016-11-24 | 2016-11-24 | Suitable for the adaptive high-voltage power supply circuit of LED drive chip |
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| CN106992678A (en) * | 2017-03-31 | 2017-07-28 | 上海晶丰明源半导体股份有限公司 | Power supply circuit, method of supplying power to, control chip and power-supply system |
| CN110880926B (en) * | 2018-09-05 | 2023-07-28 | 欧姆龙株式会社 | Switch driving circuit and electric device |
| CN113852279B (en) * | 2021-09-09 | 2023-12-01 | 无锡博通微电子技术有限公司 | Control system and control method for high-voltage power supply |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101093956A (en) * | 2007-07-20 | 2007-12-26 | 开源集成电路(苏州)有限公司 | Under voltage locking circuit with temperature compensation |
| CN102263402A (en) * | 2010-05-31 | 2011-11-30 | 研祥智能科技股份有限公司 | Over-current protection circuit and over-current protection method for DC power supply |
| CN102523653A (en) * | 2011-12-20 | 2012-06-27 | 江苏飞格光电有限公司 | Controllable LED current source circuit |
| CN103066971A (en) * | 2012-12-31 | 2013-04-24 | 成都锐成芯微科技有限责任公司 | Ultra-low power consumption high-precision power-on reset circuit |
| CN206283686U (en) * | 2016-11-24 | 2017-06-27 | 上海灿瑞科技股份有限公司 | Suitable for the self adaptation high-voltage power supply circuit of LED drive chip |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9554436B2 (en) * | 2013-07-24 | 2017-01-24 | Philips Lighting Holding B.V. | Power supply for LED lighting system |
-
2016
- 2016-11-24 CN CN201611050454.5A patent/CN106376145B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101093956A (en) * | 2007-07-20 | 2007-12-26 | 开源集成电路(苏州)有限公司 | Under voltage locking circuit with temperature compensation |
| CN102263402A (en) * | 2010-05-31 | 2011-11-30 | 研祥智能科技股份有限公司 | Over-current protection circuit and over-current protection method for DC power supply |
| CN102523653A (en) * | 2011-12-20 | 2012-06-27 | 江苏飞格光电有限公司 | Controllable LED current source circuit |
| CN103066971A (en) * | 2012-12-31 | 2013-04-24 | 成都锐成芯微科技有限责任公司 | Ultra-low power consumption high-precision power-on reset circuit |
| CN206283686U (en) * | 2016-11-24 | 2017-06-27 | 上海灿瑞科技股份有限公司 | Suitable for the self adaptation high-voltage power supply circuit of LED drive chip |
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