CN106374908B - Step level output circuit - Google Patents
Step level output circuit Download PDFInfo
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- CN106374908B CN106374908B CN201610767401.9A CN201610767401A CN106374908B CN 106374908 B CN106374908 B CN 106374908B CN 201610767401 A CN201610767401 A CN 201610767401A CN 106374908 B CN106374908 B CN 106374908B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
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- Computer Hardware Design (AREA)
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- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
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Abstract
The present invention relates to a kind of step level output circuits, including reference source circuit, intermediate level driving circuit, control circuit, first P-type transistor, first N-type transistor and the second N-type transistor, wherein, the intermediate level driving circuit includes current source, second P-type transistor, third N-type transistor and capacitor, the threshold voltage vt hp of second P-type transistor, the threshold voltage vt hn of second N-type transistor, there is following relationship: VF=V1+Vthn-Vthp between the medium voltage V1 of the output end output of the step level output circuit and the reference voltage VF of reference source circuit output.Using the circuit of this kind of structure, output response is fast, is suitable for large range of bandwidth applications, simple for structure, maintains electric current small, it is only necessary to which three driving tubes, the characteristics of saving chip area, improving cost performance, while keeping quick response are with a wide range of applications.
Description
Technical field
The present invention relates to gate driver technology field more particularly to step level gate driver technology field, in particular to
A kind of step level output circuit.
Background technique
In the driving circuit, especially in the driving to IGBT, pulse voltage usually is generated using driving IC to drive
The grid of IGBT, as shown in Figure 1, in some applications, driving IC drives IGBT (or MOS sometimes for step level is generated
Pipe), as shown in Figure 2.Driving IGBT (or metal-oxide-semiconductor) signal first rises to the level of a setting, jumps again after continuing for some time
Change to VCC level.
Usually realize that above-mentioned function has following two ways:
Implementation one, as shown in figure 3, amplifier is used using follower mode with reference to source module output reference voltage V1,
By the input reference voltage signal of switching amplifier forward end, corresponding driving signal is generated in the output end of amplifier.This
Step driving signal needed for the output that kind mode can be convenient, but because of the limitation of the factors such as amplifier own bandwidth, driving letter
Number transformation speed be restricted, be only used for the workplace of low frequency.
Implementation two, as shown in figure 4, voltage source circuit generates the V1 with driving capability, in this way, in control electricity
Under the control on road, when P32 is connected, output voltage V1；When P31 is connected, output voltage VCC；When N31 is connected, output is closed.
The structural response speed is better than the response speed of mode one, but because the V1 that voltage source circuit generates needs stronger driving energy
Power, therefore the efferent duct needs of voltage source circuit do larger, Simultaneous Switching pipe P31, P32 and N32 are also required to low conducting resistance
It is anti-, therefore the structure needs the efferent duct of very large area to meet the requirement of driving output, cost performance is very low.
Summary of the invention
The purpose of the present invention is overcoming the above-mentioned prior art, providing one kind, to can be realized output voltage quick
Step jump step level output circuit.
To achieve the goals above, the present invention has following constitute:
The step level output circuit, including reference source circuit, intermediate level driving circuit, control circuit, the first p-type are brilliant
Body pipe, the first N-type transistor and the second N-type transistor, the reference source circuit export reference level signal in described
Between level driving circuit, the first control terminal of the control circuit and the first inverted control terminals respectively with the intermediate level
Driving circuit is connected, and the second control terminal of the control circuit is connected with the grid of first P-type transistor, institute
The third control terminal for the control circuit stated is connected with the grid of first N-type transistor, and the control circuit passes through
The input terminal of step level output circuit is received from external control signal, the intermediate level driving circuit also with it is described
The second N-type transistor grid connection, the drain electrode of second N-type transistor, first P-type transistor source electrode
VCC is connected to the source-substrate of first P-type transistor, the source electrode of second N-type transistor and described the
The drain electrode of one P-type transistor is connected with the drain electrode of first N-type transistor, and level signal is passed through step level
The output end of output circuit is exported to external power device, and the source electrode of first N-type transistor is grounded.
Preferably, reverse phase is believed each other for first control terminal and the level signal of first inverted control terminals output
Number.
Preferably, the intermediate level driving circuit include current source, the second P-type transistor, third N-type transistor and
The grid of capacitor, second P-type transistor is connect with the reference source circuit, the leakage of second P-type transistor
Pole ground connection, the source electrode of second P-type transistor be connected with substrate and with the cathode of the current source, the capacitor
The drain electrode of first end, the third N-type transistor connected with the grid of second N-type transistor, the capacitor
Second end connect with the first inverted control terminals of the control circuit, the grid of the third N-type transistor with it is described
Control circuit the first control terminal connection, the third N-type transistor source electrode ground connection.
More preferably, the threshold voltage vt hp of second P-type transistor, the threshold value of second N-type transistor are electric
Press the medium voltage V1 of the output end output of Vthn, the step level output circuit and the reference electricity of reference source circuit output
Pressing has following relationship between VF:
VF=V1+Vthn-Vthp.
Using the step level output circuit in the invention, output response is fast, is suitable for large range of bandwidth applications, knot
Structure is succinct, maintains electric current small, it is only necessary to which three driving tubes save chip area, improve cost performance, while keeping quickly ringing
The characteristics of answering is with a wide range of applications.
Detailed description of the invention
Fig. 1 is the schematic diagram for carrying out gate driving by pulse voltage in the prior art.
Fig. 2 is the schematic diagram that gate driving is carried out by step level of the prior art.
Fig. 3 is the circuit diagram of the mode one for realizing step level output of the prior art.
Fig. 4 is the circuit diagram of the mode two for realizing step level output of the prior art.
Fig. 5 is the circuit diagram of step level output circuit of the invention.
Description of symbols:
1 driving IC
2 power devices
3 reference sources
4 voltage source circuits
5 control circuits
6 intermediate level driving circuits
7 reference source circuits
Specific embodiment
It is further to carry out combined with specific embodiments below in order to more clearly describe technology contents of the invention
Description.
The present invention provides a kind of step level output circuits, provide the voltage of step for the grid for power component,
In a kind of feasible embodiment, the step level output circuit, including reference source circuit, intermediate level driving circuit, control
Circuit, the first P-type transistor, the first N-type transistor and the second N-type transistor processed, the reference source circuit output is with reference to electricity
Ordinary mail number to the intermediate level driving circuit, the first control terminal of the control circuit and the first inverted control terminals are distinguished
It is connected with the intermediate level driving circuit, the second control terminal of the control circuit and first P-type crystal
The grid of pipe is connected, and the third control terminal of the control circuit is connected with the grid of first N-type transistor, institute
The control circuit stated is received by the input terminal of step level output circuit from external control signal, the intermediate level
Driving circuit is also connect with the grid of second N-type transistor, the drain electrode of second N-type transistor, described
The source-substrate of the source electrode of one P-type transistor and first P-type transistor is connected to VCC, second N-type transistor
The drain electrode of source electrode and first P-type transistor and the drain electrode of first N-type transistor be connected, and by level
Signal is exported by the output end of step level output circuit to external power device, the source electrode of first N-type transistor
Ground connection.
In a kind of preferable embodiment, the electricity of first control terminal and first inverted control terminals output
Ordinary mail number inversion signal each other.
In a kind of preferable embodiment, the intermediate level driving circuit includes current source, the second P-type crystal
Pipe, third N-type transistor and capacitor, the grid of second P-type transistor is connect with the reference source circuit, described
The source electrode of the grounded drain of second P-type transistor, second P-type transistor be connected with substrate and with the current source
Cathode, the capacitor first end, the third N-type transistor drain electrode and second N-type transistor grid
Pole connection, the second end of the capacitor are connect with the first inverted control terminals of the control circuit, and the third N-type is brilliant
The grid of body pipe is connect with the first control terminal of the control circuit, the source electrode ground connection of the third N-type transistor.
In a kind of more preferably embodiment, the threshold voltage vt hp of second P-type transistor, the 2nd N
The medium voltage V1 and reference source of the output end output of the threshold voltage vt hn of transistor npn npn, the step level output circuit
There is following relationship between the reference voltage VF of circuit output:
VF=V1+Vthn-Vthp.
In a kind of more specific embodiment, circuit structure of the invention is as shown in figure 5, include reference source circuit, control
Circuit processed, midway drive electrical level output circuit and driving tube P31, N31, N32.Intermediate level driving circuit includes an electric current
Source Ibs1, P-type transistor P32, capacitor C1 and N-type transistor N33, specific effect are as follows:
Reference source circuit exports a reference level VF, reference voltage when as output intermediate level.The level signal
It exports to the grid of P-type transistor P32.
Control circuit be output control signal, control transistor N31, N32, P31 working condition, wherein CTL1 and~
CTL1 is inversion signal, and CTL1 is output to the grid of transistor N33, and~CTL1 is output to one end of capacitor C1, and CTL2 is output to
The grid of transistor P31, CTL3 are output to the grid of transistor N31；
Efferent duct includes two N-type transistor N31 and N32, a P-type transistor P31；P31 is used to generate the high electricity of output
It is flat；N32 is used to generate intermediate output level；N31 is acted on for drop-down, and OUT is made to export low level.
When transistor N33 is connected, signal S1 is low level, closes transistor N32；Bias current Ibs1 is used in N33
The pull-up current to S1 is exported when closing；Transistor P32 clamps signal S1 under the reference voltage effect that grid connects.
The circuit structure working principle is as follows:
1) assume original state, CTL1, CTL2, CTL3 export high level, and~CTL1 is low level, at this moment transistor N31
Conducting, P31, N32 are closed, and the end out exports low level signal.
2) when CTL1, CTL3 become low level, CTL2 maintains high level constant, and at this moment N31, N33 will be closed, because of capacitor
The effect of C1, the rising of~CTL1 will drive signal S1 to rise rapidly, thus be transistor N32 grid voltage also rapidly on
It rises, because of the Following effect between transistor source and grid, so that drive output OUT voltage rises.
The grid voltage of P32 meets reference voltage VF in Fig. 5, therefore signal S1 voltage rises to when P32 is connected, the electricity of S1
It is flat to will be clamped, in this way but also the voltage at the end out is limited in a stationary value, to export the output level value of setting.Cause
To maintain not needing very strong driving, standby current very little during output.
Assuming that the threshold voltage of P32 and N32 is respectively Vthp and Vthn, the intermediate level that OUT terminal needs to export is V1, that
The value of the VF of needs can be calculated accordingly, it may be assumed that
VF=V1+Vthn-Vthp.
3) work as next stage, CTL2 becomes low level, and when CTL3 remains unchanged, transistor P31 will be connected, output end level
High level VCC will be rapidly risen to again.
4) when needing to close output, CTL1, CTL2, CTL3 become high level, and~CTL becomes low level, simultaneously as
The effect of capacitor C1, the decline of~CTL1 level, the also decrease speed of acceleration signals S1, so that N32 is closed rapidly.
In the technical solution of step level output circuit of the invention, wherein included each function device and circuit mould
Block can correspond to actual particular hardware circuit structure, therefore these modules and unit can merely with hardware circuit
To realize, corresponding function can be realized automatically by not needing auxiliary specifically to control software.
Using the step level output circuit in the invention, output response is fast, is suitable for large range of bandwidth applications, knot
Structure is succinct, maintains electric current small, it is only necessary to which three driving tubes save chip area, improve cost performance, have a wide range of applications
Range.
In this description, the present invention is described with reference to its specific embodiment.But it is clear that can still make
Various modifications and alterations are without departing from the spirit and scope of the invention.Therefore, the description and the appended drawings should be considered as illustrative
And not restrictive.
Claims (4)
1. a kind of step level output circuit, which is characterized in that the circuit includes reference source circuit, intermediate level driving electricity
Road, control circuit, the first P-type transistor, the first N-type transistor and the second N-type transistor, the reference source circuit export ginseng
Level signal is examined to the intermediate level driving circuit, the first control terminal and the first inverted control terminals of the control circuit
It is connected respectively with the intermediate level driving circuit, the second control terminal of the control circuit and first p-type
The grid of transistor is connected, and the third control terminal of the control circuit is connected with the grid of first N-type transistor
Connect, the control circuit is received by the input terminal of step level output circuit from external control signal, it is described in
Between level driving circuit also connect with the grid of second N-type transistor, the drain electrode of second N-type transistor, institute
The source-substrate of the source electrode for the first P-type transistor stated and first P-type transistor is connected to VCC, second N-type
The source electrode of transistor is connected with the drain electrode of first P-type transistor and the drain electrode of first N-type transistor, and
Level signal is exported by the output end of step level output circuit to external power device, first N-type transistor
Source electrode ground connection.
2. step level output circuit according to claim 1, which is characterized in that first control terminal and described
The level signal inversion signal each other of first inverted control terminals output.
3. step level output circuit according to claim 1, which is characterized in that the intermediate level driving circuit packet
Include current source, the second P-type transistor, third N-type transistor and capacitor, the grid of second P-type transistor and described
Reference source circuit connection, the grounded drain of second P-type transistor, the source electrode and substrate of second P-type transistor
Be connected and with the cathode of the current source, the first end of the capacitor, the drain electrode of the third N-type transistor and institute
The grid for the second N-type transistor stated connects, and the first reverse phase of the second end of the capacitor and the control circuit controls
End connection, the grid of the third N-type transistor are connect with the first control terminal of the control circuit, the 3rd N
The source electrode of transistor npn npn is grounded.
4. step level output circuit according to claim 3, which is characterized in that the threshold of second P-type transistor
Threshold voltage Vthp, the threshold voltage vt hn of second N-type transistor, the output end of the step level output circuit are defeated
There is following relationship between the reference voltage VF of medium voltage V1 and reference source circuit output out:
VF=V1+Vthn-Vthp.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610767401.9A CN106374908B (en) | 2016-08-30 | 2016-08-30 | Step level output circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610767401.9A CN106374908B (en) | 2016-08-30 | 2016-08-30 | Step level output circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106374908A CN106374908A (en) | 2017-02-01 |
| CN106374908B true CN106374908B (en) | 2019-03-19 |
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ID=57901643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610767401.9A Active CN106374908B (en) | 2016-08-30 | 2016-08-30 | Step level output circuit |
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Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007028278A (en) * | 2005-07-19 | 2007-02-01 | Denso Corp | Drive circuit |
| JP6480184B2 (en) * | 2011-06-14 | 2019-03-06 | インフィネオン テクノロジーズ オーストリア アクチエンゲゼルシャフト | Power transistor gate driver |
| EP2816728B1 (en) * | 2013-06-20 | 2020-08-05 | ABB Schweiz AG | Active gate drive circuit |
| US9627987B2 (en) * | 2014-12-13 | 2017-04-18 | Richtek Technology Corporation | Flyback converter operating by synchronous rectification with transient protection, primary side control circuit therein, and control method thereof |
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| Publication number | Publication date |
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| CN106374908A (en) | 2017-02-01 |
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Address after: 214135 -6, Linghu Avenue, Wuxi Taihu international science and Technology Park, Wuxi, Jiangsu, China, 180 Patentee after: China Resources micro integrated circuit (Wuxi) Co., Ltd Address before: No.180-22, Linghu Avenue, Taihu International Science and Technology Park, Wuxi, Jiangsu 214135 Patentee before: WUXI CHINA RESOURCES SEMICO Co.,Ltd. |
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