CN106374002A - 环形深层绝缘结构的石墨烯硅基太阳能电池及其制备方法 - Google Patents
环形深层绝缘结构的石墨烯硅基太阳能电池及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种环形深层绝缘结构的石墨烯硅基太阳能电池，包括单晶硅片，所述单晶硅片包括第一掺杂区和第二掺杂区，所述单晶硅片的第一掺杂区一面设置背电极，所述单晶硅片的第二掺杂区一面设置二氧化硅层，所述第一掺杂区掺杂浓度小于第二掺杂区掺杂浓度，所述二氧化硅层是具有通孔的环状结构，二氧化硅层陷入第二掺杂区的厚度为0.2～2μm，所述二氧化硅层的表面和由二氧化硅层通孔暴露的第二掺杂区表面设置石墨烯薄膜，所述石墨烯薄膜表面设置前电极。本发明公开了制备环形深层绝缘结构的石墨烯硅基太阳能电池的方法。该环形深层绝缘结构的石墨烯硅基太阳能电池的效率与传统结构相比有显著提高。
Description
技术领域
本发明涉及一种太阳能电池及其制备方法，尤其是涉及一种环形深层绝缘结构的石墨烯硅基太阳能电池及其制备方法。
背景技术
太阳能电池按照结构来分可以分为由同质材料构成一个或多个PN结的同质结太阳能电池；由异质材料构成一个或多个PN结的异质结太阳能电池；由金属和半导体接触构成的肖特基结太阳能电池；由电解质中半导体电极构成的光电化学太阳能电池。近年来发展最为成熟的硅基半导体PN结太阳能电池面临高能耗、高成本、高污染等几大问题。
石墨烯是零带系半导体，其能带结构在K空间成对顶的双锥形，费米面在迪拉克点之上，石墨烯为n型，费米面在狄拉克点以下为p型。石墨烯薄膜与n型单晶硅结合可构成石墨烯硅基肖特基结，并进一步组装成太阳能电池。
与传统p-n或p-i-n结构的硅基太阳能电池相比，石墨烯硅基异质结电池结构简单，避免了复杂的高温扩散工艺，制备过程环保，有效的降低了太阳能电池的成本。但目前该结构电池光电转换效率不高，其中一个主要问题在于石墨烯与硅基形成异质结构的界面态缺陷较多，从而导致光生载流子收集过程中在界面处形成的漏电流比较大，降低了器件的短路电流，使得光电转换效率比较低。
发明内容
本发明的一个目的是提供了一种环形深层绝缘结构的石墨烯硅基太阳能电池，解决现有石墨烯硅基异质结结构中漏电流比较大的问题。本发明的另一个目的是提供环形深层绝缘结构的石墨烯硅基太阳能电池的制备方法
本发明技术方案如下：一种环形深层绝缘结构的石墨烯硅基太阳能电池，包括单晶硅片，所述单晶硅片包括第一掺杂区和第二掺杂区，所述单晶硅片的第一掺杂区一面设置背电极，所述单晶硅片的第二掺杂区一面设置二氧化硅层，所述第一掺杂区掺杂浓度小于第二掺杂区掺杂浓度，所述二氧化硅层是具有通孔的环状结构，二氧化硅层陷入第二掺杂区的厚度为0.2～2μm，所述二氧化硅层的表面和由二氧化硅层通孔暴露的第二掺杂区表面设置石墨烯薄膜，所述石墨烯薄膜表面设置前电极。
进一步的，所述通孔为矩形孔，所述矩形孔的相对两侧间距为10～50μm。
进一步的，所述第一掺杂区与第二掺杂区掺杂类型同为n型或p型。
优选的，所述第一掺杂区掺杂浓度为1×1012cm-3～1×1015cm-3，所述第二掺杂区掺杂浓度为1×1014cm-3～1×1017cm-3。
优选的，所述二氧化硅层陷入单晶硅片的厚度为0.8～1.2μm。
优选的，所述石墨烯薄膜为单层或多层石墨烯，厚度为1～100nm。
优选的，所述背电极材质为Cu、Ag、Al、ZnO和ITO中的一种。
一种环形深层绝缘结构的石墨烯硅基太阳能电池的制备方法，包括对单晶硅片进行不同浓度的掺杂得到第一掺杂区和第二掺杂区，在第一掺杂区表面制备背电极，在第二掺杂区表面制备具有通孔的环状二氧化硅层，在二氧化硅层的表面和由二氧化硅层通孔暴露的第二掺杂区表面设置石墨烯薄膜，在石墨烯薄膜表面制备前电极，其中在第二掺杂区表面制备具有通孔的环状二氧化硅层采用一下方式进行，首先在气压区间0.1Mpa～0.5Mpa，温度区间600℃～800℃，利用氧气对第二掺杂区表面进行一次氧化；再利用氮气、氩气、氦气三种惰性气体中的一种与氧化剂在气压区间0.8Mpa～1.2Mpa，高温度区间900℃～1200℃进行二次氧化。
优选的，所述氧化剂为CrO3、KO3、CsO3和RbO3中的一种。
本发明所提供的技术方案的优点在于：通过设置陷入单晶硅片的环形结构降低异质结界面处的强电场引起的漏电流，产生更好的钝化效果，提高器件的短路电流和填充因子，进而提高电池的光电转换效率，电池转换效率可提高8％左右。制备本发明的石墨烯硅基太阳能电池，采用工艺步骤均是成熟工艺，制备成本低廉。
附图说明
图1为本发明的结构示意图；
图2为环状结构的二氧化硅层结构示意图；
图3为各实施例和传统结构器件的IV测试曲线图。
具体实施方式
下面结合实施例对本发明作进一步说明，但不作为对本发明的限定。
请结合图1和图2所示，实施例1的环形深层绝缘结构的石墨烯硅基太阳能电池由以下方式制得：对p型单晶硅片进行不同浓度掺杂获得第一掺杂区4a和第二掺杂区4b，其中第一掺杂区掺杂浓度为1×1012cm-3，第二掺杂区掺杂浓度为1×1016cm-3。在第二掺杂区4b的上表面利用双重氧化法制备二氧化硅层3，首先在0.2Mpa氧气氛围下，管内温度600℃进行一次氧化；其次利用氩气混合CrO3在气压1Mpa，管内温度900℃进行二次局部氧化制备环状结构的二氧化硅层3，二氧化硅层3在单晶硅片4的陷入深度h为0.8μm，二氧化硅层3的通孔为矩形孔，矩形孔的相对两侧间距d为22μm；第一掺杂区4a的下表面制备金属Al背电极5；采用喷涂工艺将石墨烯溶液平铺在二氧化硅层3和由二氧化硅层3通孔暴露的第二掺杂区4b上表面，经过干燥后石墨烯薄膜2厚度为20nm与第二掺杂区表面紧密贴合；石墨烯薄膜2表面制备前电极1引出导线作为电池的正极，背电极5引出导线作为电池的负极。
实施例2的环形深层绝缘结构的石墨烯硅基太阳能电池由以下方式制得：对n型单晶硅片进行不同浓度掺杂获得第一掺杂区和第二掺杂区，其中第一掺杂区掺杂浓度为1×1014cm-3，第二掺杂区掺杂浓度为1×1016cm-3。在第二掺杂区的上表面利用双重氧化法制备二氧化硅层。首先在0.1Mpa氧气氛围下，管内温度650℃进行一次氧化；其次利用氩气混合CrO3在气压1.2Mpa，管内温度1000℃进行二次局部氧化制备环状结构的二氧化硅层，二氧化硅层在第二掺杂区的陷入深度h为1.2μm，二氧化硅层3的通孔为矩形孔，矩形孔的相对两侧间距d为22μm；第一掺杂区的下表面制备金属Al背电极；采用喷涂工艺将石墨烯溶液平铺在二氧化硅层和由二氧化硅层通孔暴露的第二掺杂区上表面，经过干燥后石墨烯薄膜厚度为10nm与第二掺杂区上表面紧密贴合；石墨烯薄膜表面制备前电极引出导线作为电池的正极，背电极引出导线作为电池的负极。
实施例3的环形深层绝缘结构的石墨烯硅基太阳能电池由以下方式制得：对n型单晶硅片进行不同浓度掺杂获得第一掺杂区和第二掺杂区，其中第一掺杂区掺杂浓度为1×1012cm-3，第二掺杂区掺杂浓度为1×1014cm-3。在第二掺杂区的上表面利用双重氧化法制备二氧化硅层。首先在0.4Mpa氧气氛围下，管内温度800℃进行一次氧化；其次利用氮气混合KO3在气压0.8Mpa，管内温度900℃进行二次局部氧化制备环状结构的二氧化硅层，二氧化硅层在第二掺杂区的陷入深度h为0.2μm，二氧化硅层3的通孔为矩形孔，矩形孔的相对两侧间距d为10μm；第一掺杂区的下表面制备金属Cu背电极；采用喷涂工艺将石墨烯溶液平铺在二氧化硅层和由二氧化硅层通孔暴露的第二掺杂区上表面，经过干燥后石墨烯薄膜厚度为40nm与第二掺杂区上表面紧密贴合；石墨烯薄膜表面制备前电极引出导线作为电池的正极，背电极引出导线作为电池的负极。
实施例4的环形深层绝缘结构的石墨烯硅基太阳能电池由以下方式制得：对p型单晶硅片进行不同浓度掺杂获得第一掺杂区和第二掺杂区，其中第一掺杂区掺杂浓度为1×1015cm-3，第二掺杂区掺杂浓度为1×1017cm-3。在第二掺杂区的上表面利用双重氧化法制备二氧化硅层，首先在0.5Mpa氧气氛围下，管内温度750℃进行一次氧化；其次利用氦气混合RbO3在气压1.2Mpa，管内温度1200℃进行二次局部氧化制备环状结构的二氧化硅层，二氧化硅层在单晶硅片的陷入深度h为2μm，二氧化硅层3的通孔为矩形孔，矩形孔的相对两侧间距d为50μm；第一掺杂区的下表面制备金属Ag背电极；采用喷涂工艺将石墨烯溶液平铺在二氧化硅层和由二氧化硅层通孔暴露的第二掺杂区上表面，经过干燥后石墨烯薄膜厚度为90nm与第二掺杂区表面紧密贴合；石墨烯薄膜表面制备前电极引出导线作为电池的正极，背电极引出导线作为电池的负极。
传统结构器件的结构，按中国专利CN101771092B公开的技术方案：在硅基底表面沉积一层氧化层，然后利用光刻方法在硅片表面刻蚀出窗口暴露出硅基底表面；将石墨烯薄膜转移至硅片表面，用银浆制备前电极，最后在硅片背面制备背电极，用导线引出正负电极，形成石墨烯硅基电池。
实施例1、实施例2、实施例3、实施例4以及传统结构器件的IV测试曲线如图3所示，可以看出采用本发明技术方案，环形深层绝缘结构的石墨烯硅基太阳能电池的效率与传统结构相比有显著提高。
Claims (9)
1.一种环形深层绝缘结构的石墨烯硅基太阳能电池，其特征在于，包括单晶硅片，所述单晶硅片包括第一掺杂区和第二掺杂区，所述单晶硅片的第一掺杂区一面设置背电极，所述单晶硅片的第二掺杂区一面设置二氧化硅层，所述第一掺杂区掺杂浓度小于第二掺杂区掺杂浓度，所述二氧化硅层是具有通孔的环状结构，二氧化硅层陷入第二掺杂区的厚度为0.2～2μm，所述二氧化硅层的表面和由二氧化硅层通孔暴露的第二掺杂区表面设置石墨烯薄膜，所述石墨烯薄膜表面设置前电极。
2.根据权利要求1所述的环形深层绝缘结构的石墨烯硅基太阳能电池，其特征在于，所述通孔为矩形孔，所述矩形孔的相对两侧间距为10～50μm。
3.根据权利要求1所述的环形深层绝缘结构的石墨烯硅基太阳能电池，其特征在于，所述第一掺杂区与第二掺杂区掺杂类型同为n型或p型。
4.根据权利要求1所述的环形深层绝缘结构的石墨烯硅基太阳能电池，其特征在于，所述第一掺杂区掺杂浓度为1×1012cm-3～1×1015cm-3，所述第二掺杂区掺杂浓度为1×1014cm-3～1×1017cm-3。
5.根据权利要求1所述的环形深层绝缘结构的石墨烯硅基太阳能电池，其特征在于，所述二氧化硅层陷入单晶硅片的厚度为0.8～1.2μm。
6.根据权利要求1所述的环形深层绝缘结构的石墨烯硅基太阳能电池，其特征在于，所述石墨烯薄膜为单层或多层石墨烯，厚度为1～100nm。
7.根据权利要求1所述的环形深层绝缘结构的石墨烯硅基太阳能电池，其特征在于，所述背电极材质为Cu、Ag、Al、ZnO和ITO中的一种。
8.一种制备权利要求1至7中任意一项所述的环形深层绝缘结构的石墨烯硅基太阳能电池的方法，其特征在于，包括对单晶硅片进行不同浓度的掺杂得到第一掺杂区和第二掺杂区，在第一掺杂区表面制备背电极，在第二掺杂区表面制备具有通孔的环状二氧化硅层，在二氧化硅层的表面和由二氧化硅层通孔暴露的第二掺杂区表面设置石墨烯薄膜，在石墨烯薄膜表面制备前电极，其中在第二掺杂区表面制备具有通孔的环状二氧化硅层采用一下方式进行，首先在气压区间0.1Mpa～0.5Mpa，温度区间600℃～800℃，利用氧气对第二掺杂区表面进行一次氧化；再利用氮气、氩气、氦气三种惰性气体中的一种与氧化剂在气压区间0.8Mpa～1.2Mpa，高温度区间900℃～1200℃进行二次氧化。
9.根据权利要求8所述的制备环形深层绝缘结构的石墨烯硅基太阳能电池的方法，其特征在于，所述氧化剂为CrO3、KO3、CsO3和RbO3中的一种。
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