CN106373977A - Light enhancement vibration energy acquisition device and array - Google Patents
Light enhancement vibration energy acquisition device and array Download PDFInfo
- Publication number
- CN106373977A CN106373977A CN201610884198.3A CN201610884198A CN106373977A CN 106373977 A CN106373977 A CN 106373977A CN 201610884198 A CN201610884198 A CN 201610884198A CN 106373977 A CN106373977 A CN 106373977A
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- light
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- 239000010409 thin film Substances 0.000 claims abstract description 71
- 239000012528 membrane Substances 0.000 claims description 21
- 239000010408 film Substances 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000004146 energy storage Methods 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 2
- 239000004744 fabric Substances 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 11
- 239000004020 conductor Substances 0.000 abstract description 2
- 230000005611 electricity Effects 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000005452 bending Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a light enhancement vibration energy acquisition device and array. The light enhancement vibration energy acquisition device comprises a thin film transistor and a piezoelectric unit, wherein the piezoelectric unit is used as a top grid of the thin film transistor to be in contact with the top of the thin film transistor, a piezoelectric thin film is a transparent piezoelectric thin film, electrodes which are arranged at the top and the bottom of the piezoelectric thin films are both transparent conductive materials, and the thin film transistor is a photosensitive thin film transistor. Compared with the prior art, the light enhancement vibration energy acquisition device uses the piezoelectric unit to acquire energy, the thin film transistor is used for rectification, pressure is converted to a direct current output, and the function of integrating energy acquisition and rectification is achieved; and with the adoption of the photosensitive thin film transistor, the device has a light enhancement effect, the output current is increased under an illumination effect, and the energy acquisition efficiency of the device is improved.
Description
Technical field
The present invention relates to collection of energy field, the enhanced vibration energy collector part of more particularly, to a kind of light and array.
Background technology
The appearance of wearable electronic is thoroughly changed the life style of the mankind.However, powerup issue be restriction its development and
Wide variety of Main Bottleneck.Current battery is the main power supply mode of wearable electronic device.Limited battery life, it is fixed to need
Phase is changed or charges, and which not only adds cost, and extremely inconvenient.People are actively developing various " throttling " skill
While art such as low-power consumption (microwatt or even nanowatt level) integrated circuit, also in the urgent need to find various " increasing income " mode (as from
Energy is obtained in environment) to break away from the dependence to battery.
It can be several environment that concentration is compared in current research that photovoltaic generation, thermo-electric generation, radio-frequency (RF) energy transmission and piezoelectricity are adopted
Energy acquisition technology.Luminous energy in environment, heat energy, electromagnetic energy and mechanical energy are converted into electric energy by this several technology respectively.These
Technology respectively has pluses and minuses, such as photovoltaic technology comparative maturity and energy density ratio is larger, but has time-varying and limitations.
Although thermo-electric generation structure simple rigid is durable, it is not easy to be miniaturized and integrated very much.Send by radiofrequency launcher
The general density of energy that is transmitted of electromagnetic wave relatively low, and transmission range is extremely limited.Piezoelectricity is adopted can have that structure is simple, energy
Metric density height, life-span length, no electromagnetic interference and be easy to miniaturization and integrated the advantages of, receive more and more attention,
It is considered as the technology being hopeful to replace battery most.Therefore, in recent years, a research is become based on the energy acquisition of piezoelectric effect
Focus.Due to piezoelectric effect generation is ac voltage signal, it usually needs rectification circuit carries out match party and can achieve unidirectional current
Output, therefore, existing piezoelectric energy acquisition technique also needs to further include the conversion to energy, storage and power management
Etc. link.
Content of the invention
It is an object of the invention to overcoming shortcoming and defect of the prior art, provide a kind of by piezoelectric thin film device and light
Sensitive film transistor is integrated to form light enhanced piezoelectricity gate thin film transistor (TFT), realizes energy acquisition with rectification function in one
Light enhanced vibration energy collector part, and form energy acquisition array based on this.
The present invention is achieved by the following technical solutions: a kind of enhanced vibration energy collector part of light, including thin film
The top contact of transistor and piezoelectric unit, the top-gated pole as thin film transistor (TFT) for the described piezoelectric unit and thin film transistor (TFT).
With respect to prior art, the light enhanced vibration energy collector part of the present invention is carried out to energy using piezoelectric unit
Collection, thin film transistor (TFT) carries out rectification, converts the pressure to direct current electricity output, realizes energy acquisition with rectification function in one.
Further, described thin film transistor (TFT) includes substrate, positioned at the bottom-gate on substrate top, positioned at the bottom on bottom-gate top
Portion's dielectric layer, positioned at the raceway groove on bottom dielectric layer top, is located at source electrode and the drain electrode of raceway groove both sides respectively, and be located at raceway groove,
Source electrode and the top dielectric on drain electrode top.
Further, the enhanced vibration energy collector part of described light also includes energy storage units and load, described energy
Memory element is connected with the source electrode of described thin film transistor (TFT) respectively with load.
Further, described piezoelectric unit includes piezoelectric membrane and the difference electrode located at piezoelectric membrane top and bottom for the layer,
The bottom electrode of described piezoelectric unit is fitted with the top of thin film transistor (TFT) or is directly prepared in thin film transistor (TFT) top.
Further, the bottom electrode of described piezoelectric unit and the top dielectric of thin film transistor (TFT) pass through anisotropic conductive
Film laminating or described piezoelectric unit are prepared in the top of thin film transistor (TFT).
Further, the bottom electrode of the drain electrode of described thin film transistor (TFT), bottom-gate and piezoelectric unit is connected.
Further, described piezoelectric membrane is transparent piezoelectric thin film, respectively the electrode located at piezoelectric membrane top and bottom for the layer
It is transparency electrode, described thin film transistor (TFT) is photoconductive film transistor.Using photoconductive film transistor so that described device has
There is light potentiation, that is, under illumination effect, output current increases, and improves the energy acquisition efficiency of described device.
Further, described thin film transistor (TFT) is amorphous silicon film transistor, polycrystalline SiTFT or organic semiconductor
Thin film transistor (TFT)；, described piezoelectric membrane is pvdf piezoelectric plastic film.
Present invention also offers a kind of enhanced vibrational energy of light gathers array, including the enhanced vibrational energy of several light
Sampler, the enhanced vibration energy collector part of the plurality of light is pressed array way and is arranged, described adjacent vibrational energy collection
Connected by metal between device and connect to bus.The enhanced vibration energy collector part of described light be aforesaid one of them
Plant described light enhanced vibration energy collector part.
With respect to prior art, the light enhanced vibrational energy collection array of the present invention, by the piezoelectric unit in device
Energy is acquired, thin film transistor (TFT) carries out rectification, converts the pressure to direct current electricity output, realize energy acquisition and rectification work(
Can be in one.Additionally, the light of the present invention enhanced vibrational energy collection array, preparation process is simple, be conducive to the big face of low cost
Long-pending preparation, can meet the requirement of wearable electronic.
Further, described metal is connected to the electric current output stage of described light enhanced vibration energy collector part.
In order to more fully understand and implement, describe the present invention below in conjunction with the accompanying drawings in detail.
Brief description
Fig. 1 is the structural representation of the light enhanced vibration energy collector part of the present invention.
Fig. 2 is the schematic equivalent circuit of the vibration energy collector part of the present invention.
Fig. 3 is the structural representation of the light enhanced vibrational energy collection array of the present invention.
Fig. 4 is the preparation flow schematic diagram that the enhanced vibrational energy of light gathers array.
Fig. 5 is that the device of the present invention is used for the voltage that digital flexion produces.
Fig. 6 is the change with angle of bend for the peak power density of the piezoelectric membrane bending generation of the device of the present invention.
Fig. 7 is the change that described device loads both end voltage under with/without illumination condition.
Fig. 8 is the change that described device loads both end voltage under different illumination intensity.
Specific embodiment
Refer to Fig. 1, it is the structural representation of the light enhanced vibration energy collector part of the present invention.Described light strengthens
Vibration energy collector part include thin film transistor (TFT), piezoelectric unit, energy storage units and load.Described thin film transistor (TFT) and
Piezoelectric unit is fitted by anisotropic conductive film.Using piezoelectric unit, energy is acquired, thin film transistor (TFT) carries out rectification,
Convert the pressure to direct current electricity output, realize energy acquisition with rectification function in one.The base structure of described thin film transistor (TFT)
Including the substrate being stacked from the bottom to top, bottom-gate, bottom dielectric layer, raceway groove and top dielectric.Described raceway groove both sides set
It is equipped with source electrode and drain electrode.Described energy storage units and load are connected with the source electrode of thin film transistor (TFT) respectively.In the present embodiment,
Described energy storage units are ultracapacitor.
In the present embodiment, described thin film transistor (TFT) includes substrate 11, positioned at the bottom-gate 12 on substrate 11 top, the bottom of positioned at
The bottom dielectric layer 13 on grid 12 top, positioned at the raceway groove 14 on bottom dielectric layer 13 top, is located at the source of raceway groove 14 both sides respectively
Pole 15 and drain electrode 16, and it is located at top dielectric 17 and the top-gated pole of raceway groove 14, source electrode 15 and drain electrode 16 tops.
Described piezoelectric unit include piezoelectric membrane 21 and respectively the electrode 22 located at piezoelectric membrane 21 top and bottom for the layer,
23.In the present embodiment, described piezoelectric membrane 21 is transparent piezoelectric thin film, and described electrode 22,23 is transparent conductive material.Transparent
Electrode light is passed through and reaches thin film transistor (TFT), thin film transistor (TFT) receiving light according to make output current strengthen.
The bottom electrode 23 of described piezoelectric unit is conductive by anisotropy with the top dielectric 17 of described thin film transistor (TFT)
The corresponding laminating of glued membrane is so that described piezoelectric unit produces electric charge under pressure as the top-gated pole of thin film transistor (TFT).Described
The bottom electrode of piezoelectric unit can also directly prepare the top with thin film transistor (TFT).The drain electrode 16 of described thin film transistor (TFT), bottom
Grid 12 is connected with the bottom electrode 23 of piezoelectric unit, and it is brilliant in thin film that piezoelectric membrane 21 produces charge effect under pressure
The top-gated pole of body pipe, bottom-gate 12 and drain electrode 16, transistor produces electric current output, and is only capable of one-way conduction it is achieved that rectification
Function.
In the present embodiment, described thin film transistor (TFT) is photosensitive amorphous silicon film transistor or organic semiconductor
Thin film transistor (TFT), is specifically non-crystalline silicon double-gate film transistor.Described piezoelectric membrane 21 is pvdf piezoelectric plastic film.
Refer to Fig. 2, it is the schematic equivalent circuit of the vibration energy collector part of the present invention.In described equivalent circuit
Pulse power s1, electric capacity c1, thin film transistor (TFT) q1 and the ohmic load r being formed including piezoelectric unit.Described pulse power s1 with
Electric capacity c1 is connected in parallel, described pulse power s1 one end ground connection.The described pulse power s1 other end is connected to thin film transistor (TFT) q1
Drain electrode d and bottom grid g.The source electrode s of described thin film transistor (TFT) q1 is connected to ohmic load r, and the other end of ohmic load r is even
It is connected to one end of pulse power s1 ground connection.Described electric capacity c1 is piezoelectric unit selfcapacity, and under pressure, piezoelectric unit produces
Raw voltage, acts on source electrode s, grid and the drain electrode d of thin film transistor (TFT), when this three electrodes are connected, thin film transistor (TFT) phase
When in a commutation diode, realizing rectification function, and the internal resistance of thin film transistor (TFT) reduces under illumination effect, improves electricity
The output of stream.
Refer to Fig. 3, it is the structural representation of the light enhanced vibrational energy collection array of the present invention, described light strengthens
Vibrational energy collection array include several light enhanced vibration energy collector part 10, the enhanced vibrational energy of the plurality of light
Amount sampler 10 is pressed array way and is arranged, and is connected and is connected by metal 20 between described adjacent vibration energy collector part 10
To bus 30, thus reducing the size connecting resistance.Described metal is connected to described light enhanced vibration energy collector part
Electric current output stage.In the present embodiment, the source electrode of described electric current output extremely thin film transistor (TFT).The enhanced vibration of light of the present invention
Energy acquisition array, is acquired to energy by the piezoelectric unit in device, and thin film transistor (TFT) carries out rectification, and pressure is converted
For direct current electricity output, realize energy acquisition with rectification function in one.Additionally, the light of the present invention enhanced vibrational energy collection battle array
Row, preparation process is simple, be conducive to low-cost large-area to prepare, the requirement of wearable electronic can be met.
Refer to Fig. 4, it is the preparation flow schematic diagram that the enhanced vibrational energy of light gathers array, and described light is enhanced to shake
The preparation method that energy gathers array comprises the following steps:
(1) multiple thin film transistor (TFT)s are formed thin film transistor (TFT) array according to array arrangement；
(2) anisotropic conductive film is fitted on thin film transistor (TFT) array；
(3) form piezoelectric unit array by corresponding with thin film transistor (TFT) for multiple piezoelectric units according to array arrangement；
(4) piezoelectric unit array is aligned with thin film transistor (TFT) array electrode, is then fitted, obtained that light is enhanced to shake
Energy gathers array.
Wherein, under uniform temperature and pressure, conducting particles therein and metal electrode connect described anisotropic conductive film
Touching makes thin film transistor (TFT) and the electrode of piezoelectric unit turn in vertical direction, and adjacent thin film transistor (TFT) and piezoelectric unit
Electrode in a parallel direction keep insulate.
The work process of light enhanced vibration energy collector part of the explanation present invention and principle briefly below:
The piezoelectric membrane 21 of described piezoelectric unit produces the top-gated pole that electric charge forms thin film transistor (TFT) under pressure, thin
The bottom electrode 23 of the drain electrode 16 of film transistor, bottom-gate 12 and piezoelectric unit is connected, and piezoelectric membrane 21 produces under pressure
Raw electric charge forms the top-gated pole to thin film transistor (TFT), bottom-gate 12 and drain electrode 16, produces electric current output, and is only capable of unidirectional
Logical, it is achieved thereby that the function of rectification.Due to employing three dimension channel structure, the light absorpting ability of raceway groove strengthens, in the work of light
With under, the internal resistance of raceway groove 14 substantially reduces, and output current will increase, it is achieved thereby that the enhanced effect of light.
Enhanced for described light vibration energy collector part is fitted on finger, voltage produced by digital flexion is carried out
Test.Refer to Fig. 5, it is the voltage for digital flexion generation for the device of the present invention.It can be seen that described device is in patch
After finger, digital flexion creates electrode output, illustrates that electric current is rectification later through load resistance.Refer to
Fig. 6, it is the change with angle of bend for the peak power density of the piezoelectric membrane bending generation of the device of the present invention, with angle of bend
The increase of degree, described peak power density increases rate of change and is gradually increased.
Vibration energy collector part for confirming the present invention truly has the enhanced effect of light, to described device with/without illumination
Under the conditions of load both end voltage tested.Refer to Fig. 7, it is that described device loads two ends electricity under with/without illumination condition
The change of pressure.It can be seen that under conditions of having illumination, load both end voltage dramatically increases, and illustrates described device in light
The lower output of effect strengthens.Refer to Fig. 8, it is the change that described device loads both end voltage under different illumination intensity.From figure
In understand, with the increase of intensity of illumination, load both end voltage and dramatically increase, the increasing with intensity of illumination for the described device is described
By force, the output of device strengthens.
With respect to prior art, the light enhanced vibration energy collector part of the present invention is carried out to energy using piezoelectric unit
Collection, thin film transistor (TFT) carries out rectification, converts the pressure to direct current electricity output, and described device has light potentiation, that is,
Under illumination effect, output current increases, and improves the energy acquisition efficiency of described device.Preparation process is simple, is conducive to low one-tenth
This large area prepares energy acquisition array to meet the requirement of wearable electronic.
The invention is not limited in above-mentioned embodiment, if the various changes to the present invention or deformation are without departing from the present invention
Spirit and scope, if these are changed and within the scope of deformation belongs to claim and the equivalent technologies of the present invention, then this
Bright it is also intended to comprise these and changes and deform.
Claims (10)
1. a kind of enhanced vibration energy collector part of light it is characterised in that: include thin film transistor (TFT) and piezoelectric unit, described pressure
The top-gated pole as thin film transistor (TFT) for the electric unit and the top contact of thin film transistor (TFT).
2. the enhanced vibration energy collector part of light according to claim 1 it is characterised in that: described thin film transistor (TFT) bag
Include substrate, positioned at the bottom-gate on substrate top, positioned at the bottom dielectric layer on bottom-gate top, positioned at the ditch on bottom dielectric layer top
Road, is located at source electrode and the drain electrode of raceway groove both sides, and the top dielectric being located at raceway groove, source electrode and drain electrode top respectively.
3. the enhanced vibration energy collector part of light according to claim 2 it is characterised in that: the enhanced vibration of described light
Energy acquisition device also includes energy storage units and load, described energy storage units and load respectively with described film crystal
The source electrode of pipe is connected.
4. the enhanced vibration energy collector part of light according to claim 2 it is characterised in that: described piezoelectric unit includes
Piezoelectric membrane and the respectively electrode located at piezoelectric membrane top and bottom for the layer, the bottom electrode of described piezoelectric unit and film crystal
Fit or be directly prepared in thin film transistor (TFT) top in the top of pipe.
5. the enhanced vibration energy collector part of light according to claim 4 it is characterised in that: the bottom of described piezoelectric unit
Portion's electrode is fitted by anisotropic conductive film with the top dielectric of thin film transistor (TFT) or described piezoelectric unit be prepared in thin
The top of film transistor.
6. the enhanced vibration energy collector part of light according to claim 4 it is characterised in that: described thin film transistor (TFT)
Drain electrode, bottom-gate are connected with the bottom electrode of piezoelectric unit.
7. the enhanced vibration energy collector part of light according to claim 4 it is characterised in that: described piezoelectric membrane is
Bright piezoelectric membrane, respectively layer be transparency electrode located at the electrode at piezoelectric membrane top and bottom, described thin film transistor (TFT) be light
Sensitive film transistor.
8. the enhanced vibration energy collector part of light according to claim 1 it is characterised in that: described thin film transistor (TFT) is
Amorphous silicon film transistor, polycrystalline SiTFT or organic semiconductor thin film transistor；Described piezoelectric membrane is pressed for pvdf
Electric plastic sheeting.
9. a kind of light enhanced vibrational energy collection array it is characterised in that: include one of them in several claim 1-8
Described light enhanced vibration energy collector part, the enhanced vibration energy collector part of the plurality of light is pressed array way and is arranged
Cloth, is connected by metal between described adjacent vibration energy collector part and connects to bus.
10. light according to claim 9 enhanced vibrational energy collection array it is characterised in that: described metal is connected to
The electric current output stage of the enhanced vibration energy collector part of described light.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610884198.3A CN106373977B (en) | 2016-10-09 | 2016-10-09 | A kind of the vibration energy collector part and array of light enhancing |
| PCT/CN2017/086546 WO2018064893A1 (en) | 2016-10-09 | 2017-05-31 | Light enhanced vibration energy harvesting device and array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610884198.3A CN106373977B (en) | 2016-10-09 | 2016-10-09 | A kind of the vibration energy collector part and array of light enhancing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106373977A true CN106373977A (en) | 2017-02-01 |
| CN106373977B CN106373977B (en) | 2019-07-02 |
Family
ID=57895213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610884198.3A Active CN106373977B (en) | 2016-10-09 | 2016-10-09 | A kind of the vibration energy collector part and array of light enhancing |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106373977B (en) |
| WO (1) | WO2018064893A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018064893A1 (en) * | 2016-10-09 | 2018-04-12 | 中山大学 | Light enhanced vibration energy harvesting device and array |
| WO2018233280A1 (en) * | 2017-06-23 | 2018-12-27 | 京东方科技集团股份有限公司 | Array substrate, fabrication method therefor, and display panel and display device using same |
| CN109545968A (en) * | 2018-11-15 | 2019-03-29 | 福州大学 | Organic Thin Film Transistors and preparation method thereof based on self-powered grid |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140060210A1 (en) * | 2012-09-05 | 2014-03-06 | Sungkyunkwan University Foundation For Corporate Collaboration | Pressure sensor and pressure sensing method |
| CN104578362A (en) * | 2015-01-21 | 2015-04-29 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Vibration energy collection device |
| CN104992982A (en) * | 2015-05-28 | 2015-10-21 | 福州大学 | Thin film transistor with superlattice structure |
| CN105264543A (en) * | 2013-06-03 | 2016-01-20 | 高通Mems科技公司 | Ultrasonic sensor with bonded piezoelectric layer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106373977B (en) * | 2016-10-09 | 2019-07-02 | 中山大学 | A kind of the vibration energy collector part and array of light enhancing |
-
2016
- 2016-10-09 CN CN201610884198.3A patent/CN106373977B/en active Active
-
2017
- 2017-05-31 WO PCT/CN2017/086546 patent/WO2018064893A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140060210A1 (en) * | 2012-09-05 | 2014-03-06 | Sungkyunkwan University Foundation For Corporate Collaboration | Pressure sensor and pressure sensing method |
| CN105264543A (en) * | 2013-06-03 | 2016-01-20 | 高通Mems科技公司 | Ultrasonic sensor with bonded piezoelectric layer |
| CN104578362A (en) * | 2015-01-21 | 2015-04-29 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Vibration energy collection device |
| CN104992982A (en) * | 2015-05-28 | 2015-10-21 | 福州大学 | Thin film transistor with superlattice structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018064893A1 (en) * | 2016-10-09 | 2018-04-12 | 中山大学 | Light enhanced vibration energy harvesting device and array |
| WO2018233280A1 (en) * | 2017-06-23 | 2018-12-27 | 京东方科技集团股份有限公司 | Array substrate, fabrication method therefor, and display panel and display device using same |
| US10802630B2 (en) | 2017-06-23 | 2020-10-13 | Boe Technology Group Co., Ltd | Array substrate, method for fabricating the same, display panel, and display device |
| CN109545968A (en) * | 2018-11-15 | 2019-03-29 | 福州大学 | Organic Thin Film Transistors and preparation method thereof based on self-powered grid |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106373977B (en) | 2019-07-02 |
| WO2018064893A1 (en) | 2018-04-12 |
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