CN106372625A - Display substrate, manufacturing method thereof and electronic device - Google Patents
Display substrate, manufacturing method thereof and electronic device Download PDFInfo
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- CN106372625A CN106372625A CN201610957960.6A CN201610957960A CN106372625A CN 106372625 A CN106372625 A CN 106372625A CN 201610957960 A CN201610957960 A CN 201610957960A CN 106372625 A CN106372625 A CN 106372625A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention relates to a display substrate, a manufacturing method thereof and an electronic device. The display substrate comprises a substrate, a thin film transistor which is formed on one side of the substrate, an organic light emitting layer which is formed on one side, which is away from the substrate, of the thin film transistor, and a fingerprint sensor which is formed in the organic light emitting layer. According to the technical scheme provided by the invention, the integration degree of the display substrate can be improved by forming the fingerprint sensor in the organic light emitting layer; due to the fact that the area of the organic light emitting layer can be set to be large, the organic light emitting layer can be arranged directly above the thin film transistor; and the fingerprint sensor is formed in the organic light emitting layer. Compared with a display substrate with the fingerprint sensor at another position, the display substrate has the advantages that the density of the fingerprint sensor is higher, and a fingerprint signal is more accurately sensed.
Description
Technical field
It relates to field of terminal technology, more particularly, to a kind of display base plate, a kind of manufacture method of display base plate and
A kind of electronic equipment.
Background technology
Application with fingerprint identification function is more and more extensive, and the structure for identifying the fingerprint sensor of fingerprint is also more next
More diversified, to be arranged on the diverse location of display device.But current most fingerprint sensors are still independent of showing
Device makes, relatively low with the integrated level of display device, leads to that technological process is relatively complicated, and product takes up room larger.
Content of the invention
The disclosure provides a kind of display base plate and preparation method thereof and electronic equipment, to solve the deficiency in correlation technique.
According to the embodiment of the present disclosure in a first aspect, provide a kind of display base plate, comprising:
Substrate；
Thin film transistor (TFT), is formed at the side of described substrate；
Organic luminous layer, is formed at the side away from described substrate for the described thin film transistor (TFT)；
Fingerprint sensor, is formed in described organic luminous layer.
Alternatively, described organic luminous layer includes:
Anode layer, is formed at the side away from described substrate for the described thin film transistor (TFT)；
Hole injection layer, is formed at the side away from described thin film transistor (TFT) for the described anode layer；
Hole transmission layer, is formed at the side away from described anode layer for the described hole injection layer；
Organic material layer, is formed at the side away from described hole injection layer for the described hole transmission layer；
Electron transfer layer, is formed at the side away from described hole transmission layer for the described organic material layer；
Electron injecting layer, is formed at the side away from described organic material layer for the described electron transfer layer；
Cathode layer, is formed at the side away from described electron transfer layer for the described electron injecting layer.
Anode layer, described fingerprint sensor is formed between described anode layer and hole injection layer, or the injection of described hole
Between layer and hole transmission layer, or between described hole transmission layer and organic material layer, or described organic material layer and electronics pass
Between defeated layer, or between described electron transfer layer and electron injecting layer, or between described electron injecting layer and cathode layer.
Alternatively, above-mentioned display base plate also includes:
Insulating barrier, is arranged between described fingerprint sensor and the Rotating fields being adjacent.
Alternatively, described fingerprint sensor is self-induction type electric capacity.
According to the second aspect of the embodiment of the present disclosure, provide a kind of display base plate manufacture method, comprising:
Thin film transistor (TFT) is formed on substrate；
Form organic luminous layer in described thin film transistor (TFT) away from the side of described substrate；
Wherein, when forming described organic luminous layer, described organic luminous layer forms fingerprint sensor.
Alternatively, include away from the side formation organic luminous layer of described substrate in described thin film transistor (TFT):
Form anode layer in described thin film transistor (TFT) away from the side of described substrate；
Form hole injection layer in described anode layer away from the side of described thin film transistor (TFT)；
Form hole transmission layer in described hole injection layer away from the side of described anode layer；
Form organic material layer in described hole transmission layer away from the side of described hole injection layer；
Form electron transfer layer in described organic material layer away from the side of described hole transmission layer；
Form electron injecting layer in described electron transfer layer away from the side of described organic material layer；
Form cathode layer in described electron injecting layer away from the side of described electron transfer layer.
Alternatively, described organic luminous layer forms fingerprint sensor to include:
Form described fingerprint sensor between described anode layer and hole injection layer；
Or form described fingerprint sensor between described hole injection layer and hole transmission layer；
Or form described fingerprint sensor between described hole transmission layer and organic material layer；
Or form described fingerprint sensor between described organic material layer and electron transfer layer；
Or form described fingerprint sensor between described electron transfer layer and electron injecting layer；
Or form described fingerprint sensor between described electron injecting layer and cathode layer.
Alternatively, above-mentioned manufacture method also includes:
Form insulating barrier between described fingerprint sensor and the Rotating fields being adjacent.
Alternatively, described fingerprint sensor is self-induction type electric capacity.
According to the third aspect of the embodiment of the present disclosure, provide a kind of electronic equipment, comprising:
Processor；
For storing the memorizer of processor executable；
Wherein, described electronic equipment also includes display base plate, and described display base plate includes:
Substrate；
Thin film transistor (TFT), is formed at the side of described substrate；
Organic luminous layer, is formed at the side away from described substrate for the described thin film transistor (TFT)；
Fingerprint sensor, is formed in described organic luminous layer.
The technical scheme that embodiment of the disclosure provides can include following beneficial effect:
From above-described embodiment, the disclosure, by being formed at fingerprint sensor in organic luminous layer, can improve aobvious
Show the integrated level of substrate, and due to the area of organic luminous layer can arrange larger it might even be possible to be arranged on film crystal
The surface of pipe, thus forming fingerprint sensor wherein, forms fingerprint sensor it is easy to be formed close with respect in other positions
The fingerprint sensor of Du Genggao, and then more accurately sense fingerprint signal.
It should be appreciated that above general description and detailed description hereinafter are only exemplary and explanatory, not
The disclosure can be limited.
Brief description
Accompanying drawing herein is merged in description and constitutes the part of this specification, shows the enforcement meeting the disclosure
Example, and be used for explaining the principle of the disclosure together with description.
Fig. 1 is a kind of structural representation of the display base plate according to an exemplary embodiment.
Fig. 2 is a kind of structural representation of the organic luminous layer according to an exemplary embodiment.
Fig. 3 is the structural representation of another kind of organic luminous layer according to an exemplary embodiment.
Fig. 4 is a kind of schematic flow diagram of the display base plate manufacture method according to an exemplary embodiment.
Fig. 5 is the schematic flow diagram of another kind of display base plate manufacture method according to an exemplary embodiment.
Fig. 6 is the schematic flow diagram of another the display base plate manufacture method according to an exemplary embodiment.
Fig. 7 is a kind of structural representation of the display device according to an exemplary embodiment.
Specific embodiment
Here will in detail exemplary embodiment be illustrated, its example is illustrated in the accompanying drawings.Explained below is related to
During accompanying drawing, unless otherwise indicated, the same numbers in different accompanying drawings represent same or analogous key element.Following exemplary embodiment
Described in embodiment do not represent all embodiments consistent with the disclosure.On the contrary, they be only with such as appended
The example of the consistent apparatus and method of some aspects being described in detail in claims, the disclosure.
Fig. 1 is a kind of structural representation of the display base plate according to an exemplary embodiment, as shown in figure 1, display
Substrate includes:
Substrate 1.
In one embodiment, the material of substrate can be glass.And it is applied to flexible display apparatus in this display base plate
When, then the material of substrate can be with flexible resin.
Thin film transistor (TFT) 2, is formed at the side of described substrate 1.
In one embodiment, as shown in Fig. 2 thin film transistor (TFT) 2 can include grid 21, active layer 22, source electrode 23 and
The structures such as drain electrode 24, are also provided with gate insulation layer 5 between grid 21 and active layer 22.
Organic luminous layer 3, is formed at the side away from described substrate 1 for the described thin film transistor (TFT) 2.
In one embodiment, organic luminous layer is formed at film crystal and refers to that organic luminous layer is away from the side of substrate
Formed after forming thin film transistor (TFT), passivation layer 6 can be provided between organic luminous layer 3 and thin film transistor (TFT) 2, have
The via that machine luminescent layer 3 passes through in passivation layer 6 is electrically connected with thin film transistor (TFT).Wherein it is possible to be formed thin by Patternized technique
Film transistor, can form organic luminous layer by evaporation process.
It should be noted that organic luminous layer and the size of thin film transistor (TFT) and position relationship are only a kind of signals in Fig. 1,
Can be adjusted as needed, for example increase organic luminous layer area so that the top of thin film transistor (TFT) there is also organic
Luminescent layer.And it is also provided with pixel between the sub-pixel that organic luminous layer is constituted and sub-pixel and define layer, in this regard, this
Disclosure repeats no more.
Fingerprint sensor 4, is formed in described organic luminous layer 3.
In one embodiment, organic luminous layer can include multiple structure, and fingerprint sensor then can be formed at it
In between adjacent double-layer structure.Wherein, fingerprint sensor can be formed by Patternized technique, and shape in display base plate
The wiring of Cheng Youyu fingerprint sensor electrical connection, and the density of fingerprint sensor is preferably larger or equal than 508ppi, to protect
Demonstrate,prove good fingerprint recognition effect, will not be described here.
In one embodiment, by being formed at fingerprint sensor in organic luminous layer, display base plate can be improved
Integrated level, and due to the area of organic luminous layer can arrange larger it might even be possible to be arranged on just going up of thin film transistor (TFT)
Side, thus forming fingerprint sensor wherein, forms fingerprint sensor it is easy to formation density is higher with respect in other positions
Fingerprint sensor, and then more accurately sense fingerprint signal.
Fig. 2 is a kind of structural representation of the organic luminous layer according to an exemplary embodiment, described organic light emission
Layer includes:
Anode layer 31, is formed at the side away from described substrate 1 for the described thin film transistor (TFT) 2；
Hole injection layer 32, is formed at the side away from described thin film transistor (TFT) 2 for the described anode layer 31；
Hole transmission layer 33, is formed at the side away from described anode layer 31 for the described hole injection layer 32；
Organic material layer 34, is formed at the side away from described hole injection layer 32 for the described hole transmission layer 33；
Electron transfer layer 35, is formed at the side away from described hole transmission layer 33 for the described organic material layer 34；
Electron injecting layer 36, is formed at the side away from described organic material layer 34 for the described electron transfer layer 35；
Cathode layer 37, is formed at the side away from described electron transfer layer 35 for the described electron injecting layer 36.
Alternatively, described fingerprint sensor is formed between described anode layer and hole injection layer, or the injection of described hole
Between layer and hole transmission layer, or between described hole transmission layer and organic material layer, or described organic material layer and electronics pass
Between defeated layer, or between described electron transfer layer and electron injecting layer, or between described electron injecting layer and cathode layer.
In one embodiment, as shown in Fig. 2 fingerprint sensor 4 can be arranged on hole injection layer 32 and hole transport
Between layer 33, the particular location of fingerprint sensor can be configured as needed.Wherein it is possible to pass to positive electricity for anode layer
Pressure, is that cathode layer passes to negative voltage, thus forming anode layer to the electric current of cathode layer, the electronics from cathode layer passes sequentially through electricity
Sub- implanted layer, electron transfer layer, organic material layer, hole transmission layer, hole injection layer reach anode layer, and through organic material
Organic material therein is excited to light during the bed of material.
In one embodiment, the organic material layer in all sub-pixels is sent white light when exciting, then with this
Need to arrange colored filter, such as Red lightscreening plate, green color filter and blue filter in the substrate that display base plate is correspondingly arranged
Mating plate, so that the light in the optical filter corresponding sub-pixel injection of different colours is different colors, and then can be by adjustment
The light intensity that goes out of sub-pixel goes out light color to change respective pixel.
In one embodiment, the organic material layer in different subpixel sends the light of different colours when being subject to and exciting,
HONGGUANG, green glow and blue light for example can be sent respectively, so that the light projecting in different sub-pixels is different colours and then permissible
By adjust sub-pixel go out that light intensity changes respective pixel go out light color.
In one embodiment, if display base plate is applied in the display device of bottom emitting structure, then can be by thoroughly
Bright conductive material forms anode, and forms negative electrode by the higher conductive material of reflectance, so that light can project from bottom.
If display base plate is applied in the display device of emission structure at top, then negative electrode can be formed by transparent conductive material, and lead to
Cross the higher conductive material of reflectance and form anode, so that light can project from top.Wherein, transparent conductive material can be
Ito (tin indium oxide), the higher conductive material of reflectance can be then the metals such as aluminum, silver.
Fig. 3 is the structural representation of another kind of organic luminous layer according to an exemplary embodiment, also includes:
Insulating barrier 7, is arranged between described fingerprint sensor 4 and the Rotating fields being adjacent.
In one embodiment, for example, on the basis of shown in Fig. 2, insulating barrier can be arranged on fingerprint sensor 4 and sky
Between cave implanted layer 32, and between fingerprint sensor 4 and hole transmission layer 33.Due in each Rotating fields in organic luminous layer
Exist by the electron stream of cathode layer to anode layer direction, and in the Rotating fields adjacent with fingerprint sensor, electronics may be deposited
In situation about being detained, thus affecting the touching signals of fingerprint sensor generation, by fingerprint sensor and the layer being adjacent
Between structure, insulating barrier is set, can reduce fingerprint sensor is affected by other Rotating fields, thus improving touch control electrode sense
Answer the accuracy of touch control operation.
Alternatively, described fingerprint sensor is self-induction type electric capacity.
In one embodiment, except fingerprint sensor being used as by self-induction type electric capacity, can also be using other knots
Structure is as fingerprint sensor, such as ultrasonic fingerprint sensor.And the thickness of self-induction type electric capacity is less, it is produced on organic luminous layer
In impact to the thickness of organic luminous layer also less, it is therefore preferred to making self-induction type capacitance structure in organic luminous layer
Fingerprint sensor.
Corresponding with the embodiment of aforesaid display base plate, the disclosure additionally provides the enforcement of display base plate manufacture method
Example.
Fig. 4 is a kind of schematic flow diagram of the display base plate manufacture method according to an exemplary embodiment, as Fig. 4 institute
Show, this manufacture method includes:
In step s41, thin film transistor (TFT) is formed on substrate；
In step s42, form organic luminous layer in described thin film transistor (TFT) away from the side of described substrate；
In step s43, when forming described organic luminous layer, described organic luminous layer forms fingerprint sensor.
Fig. 5 is the schematic flow diagram of another kind of display base plate manufacture method according to an exemplary embodiment, in Fig. 4
On the basis of illustrated embodiment, include away from the side formation organic luminous layer of described substrate in described thin film transistor (TFT):
In step s421, form anode layer in described thin film transistor (TFT) away from the side of described substrate；
In step s422, form hole injection layer in described anode layer away from the side of described thin film transistor (TFT)；
In step s423, form hole transmission layer in described hole injection layer away from the side of described anode layer；
In step s424, form organic material layer in described hole transmission layer away from the side of described hole injection layer；
In step s425, form electron transfer layer in described organic material layer away from the side of described hole transmission layer；
In step s426, form electron injecting layer in described electron transfer layer away from the side of described organic material layer；
In step s427, form cathode layer in described electron injecting layer away from the side of described electron transfer layer.
Alternatively, described organic luminous layer forms fingerprint sensor to include:
Form described fingerprint sensor between described anode layer and hole injection layer；
Or form described fingerprint sensor between described hole injection layer and hole transmission layer；
Or form described fingerprint sensor between described hole transmission layer and organic material layer；
Or form described fingerprint sensor between described organic material layer and electron transfer layer；
Or form described fingerprint sensor between described electron transfer layer and electron injecting layer；
Or form described fingerprint sensor between described electron injecting layer and cathode layer.
Fig. 6 is the schematic flow diagram of another the display base plate manufacture method according to an exemplary embodiment, in Fig. 5
On the basis of illustrated embodiment, above-mentioned manufacture method also includes:
In step s44, form insulating barrier between described fingerprint sensor and the Rotating fields being adjacent.
It should be noted that the step in above-mentioned manufacture method can adjust execution sequence, such as step s43 as needed
Can execute between step s422 and step s423, and step s44 can be between step s422 and step s44, Yi Jibu
Rapid execution between s423 and step s44.
Alternatively, described fingerprint sensor is self-induction type electric capacity.
With regard to the manufacture method in above-described embodiment, wherein the concrete mode of each step is in related display base plate
It has been described in detail in embodiment, explanation will be not set forth in detail herein.
Fig. 7 is a kind of block diagram of the display device 700 according to an exemplary embodiment.For example, device 700 can be
Mobile phone, computer, digital broadcast terminal, messaging devices, game console, tablet device, armarium, body-building sets
Standby, personal digital assistant etc..
With reference to Fig. 7, device 700 can include following one or more assemblies: process assembly 702, memorizer 704, power supply
Assembly 706, multimedia groupware 708, audio-frequency assembly 710, the interface 712 of input/output (i/o), sensor cluster 714, and
Communication component 716, also includes display base plate, and display base plate includes: substrate；Thin film transistor (TFT), is formed at the side of described substrate；
Organic luminous layer, is formed at the side away from described substrate for the described thin film transistor (TFT)；Fingerprint sensor, is formed at described organic
In photosphere.
The integrated operation of the usual control device 700 of process assembly 702, such as with display, call, data communication, phase
Machine operation and record operate associated operation.Process assembly 702 can include one or more processors 720 and refer to execute
Order.Additionally, process assembly 702 can include one or more modules, it is easy to the friendship between process assembly 702 and other assemblies
Mutually.For example, process assembly 702 can include multi-media module, to facilitate between multimedia groupware 708 and process assembly 702
Interaction.
Memorizer 704 is configured to store various types of data to support the operation in device 700.The showing of these data
Example includes the instruction for any application program of operation or method on device 700, contact data, telephone book data, disappears
Breath, picture, video etc..Memorizer 704 can be by any kind of volatibility or non-volatile memory device or their group
Close and realize, such as static RAM (sram), Electrically Erasable Read Only Memory (eeprom), erasable compile
Journey read only memory (eprom), programmable read only memory (prom), read only memory (rom), magnetic memory, flash
Device, disk or CD.
Power supply module 706 provides electric power for the various assemblies of device 700.Power supply module 706 can include power management system
System, one or more power supplys, and other generate, manage and distribute, with for device 700, the assembly that electric power is associated.
Multimedia groupware 708 includes the screen of one output interface of offer between described device 700 and user.One
In a little embodiments, screen can include liquid crystal display (lcd) and touch panel (tp).If screen includes touch panel, screen
Curtain may be implemented as touch screen, to receive the input signal from user.Touch panel includes one or more touch sensings
Device is with the gesture on sensing touch, slip and touch panel.Described touch sensor can not only sensing touch or sliding action
Border, but also detection and described touch or slide related persistent period and pressure.In certain embodiments, many matchmakers
Body assembly 708 includes a front-facing camera and/or post-positioned pick-up head.When device 700 is in operator scheme, such as screening-mode or
During video mode, front-facing camera and/or post-positioned pick-up head can receive outside multi-medium data.Each front-facing camera and
Post-positioned pick-up head can be the optical lens system of a fixation or have focusing and optical zoom capabilities.
Audio-frequency assembly 710 is configured to output and/or input audio signal.For example, audio-frequency assembly 710 includes a Mike
Wind (mic), when device 700 is in operator scheme, during as call model, logging mode and speech recognition mode, mike is joined
It is set to reception external audio signal.The audio signal being received can be further stored in memorizer 704 or via communication set
Part 716 sends.In certain embodiments, audio-frequency assembly 710 also includes a speaker, for exports audio signal.
, for providing interface between process assembly 702 and peripheral interface module, above-mentioned peripheral interface module can for i/o interface 712
To be keyboard, click wheel, button etc..These buttons may include but be not limited to: home button, volume button, start button and lock
Determine button.
Sensor cluster 714 includes one or more sensors, for providing the state of various aspects to comment for device 700
Estimate.For example, sensor cluster 714 can detect/the closed mode of opening of device 700, and the relative localization of assembly is for example described
Assembly is display and the keypad of device 700, and sensor cluster 714 can be with detection means 700 or 700 1 assemblies of device
Position change, user is presence or absence of with what device 700 contacted, device 700 orientation or acceleration/deceleration and device 700
Temperature change.Sensor cluster 714 can include proximity transducer, is configured to the detection when not having any physical contact
The presence of object nearby.Sensor cluster 714 can also include optical sensor, such as cmos or ccd imageing sensor, for becoming
Use as in application.In certain embodiments, this sensor cluster 714 can also include acceleration transducer, gyro sensors
Device, Magnetic Sensor, pressure transducer or temperature sensor.
Communication component 716 is configured to facilitate the communication of wired or wireless way between device 700 and other equipment.Device
700 can access the wireless network based on communication standard, such as wifi, 2g or 3g, or combinations thereof.In an exemplary enforcement
In example, communication component 716 receives broadcast singal or the broadcast related information from external broadcasting management system via broadcast channel.
In one exemplary embodiment, described communication component 716 also includes near-field communication (nfc) module, to promote junction service.Example
As, RF identification (rfid) technology can be based in nfc module, Infrared Data Association (irda) technology, ultra broadband (uwb) technology,
Bluetooth (bt) technology and other technologies are realizing.
In the exemplary embodiment, device 700 can be by one or more application specific integrated circuits (asic), numeral letter
Number processor (dsp), digital signal processing appts (dspd), PLD (pld), field programmable gate array
(fpga), controller, microcontroller, microprocessor or other electronic components are realized.
In the exemplary embodiment, a kind of non-transitorycomputer readable storage medium including instruction, example are additionally provided
As included the memorizer 704 instructing, above-mentioned instruction can be executed by the processor 720 of device 700.For example, described non-transitory meter
Calculation machine readable storage medium storing program for executing can be that rom, random access memory (ram), cd-rom, tape, floppy disk and optical data storage set
Standby etc..
Those skilled in the art, after considering description and putting into practice disclosure disclosed herein, will readily occur to its of the disclosure
Its embodiment.The application is intended to any modification, purposes or the adaptations of the disclosure, these modifications, purposes or
Person's adaptations are followed the general principle of the disclosure and are included the undocumented common knowledge in the art of the disclosure
Or conventional techniques.Description and embodiments be considered only as exemplary, the true scope of the disclosure and spirit by following
Claim is pointed out.
It should be appreciated that the disclosure is not limited to be described above and precision architecture illustrated in the accompanying drawings, and
And various modifications and changes can carried out without departing from the scope.The scope of the present disclosure only to be limited by appended claim.
Claims (11)
1. a kind of display base plate is it is characterised in that include:
Substrate；
Thin film transistor (TFT), is formed at the side of described substrate；
Organic luminous layer, is formed at the side away from described substrate for the described thin film transistor (TFT)；
Fingerprint sensor, is formed in described organic luminous layer.
2. display base plate according to claim 1 is it is characterised in that described organic luminous layer includes:
Anode layer, is formed at the side away from described substrate for the described thin film transistor (TFT)；
Hole injection layer, is formed at the side away from described thin film transistor (TFT) for the described anode layer；
Hole transmission layer, is formed at the side away from described anode layer for the described hole injection layer；
Organic material layer, is formed at the side away from described hole injection layer for the described hole transmission layer；
Electron transfer layer, is formed at the side away from described hole transmission layer for the described organic material layer；
Electron injecting layer, is formed at the side away from described organic material layer for the described electron transfer layer；
Cathode layer, is formed at the side away from described electron transfer layer for the described electron injecting layer.
3. display base plate according to claim 2 it is characterised in that described fingerprint sensor be formed at described anode layer and
Between hole injection layer, or between described hole injection layer and hole transmission layer, or described hole transmission layer and organic material layer
Between, or between described organic material layer and electron transfer layer or between described electron transfer layer and electron injecting layer or described
Between electron injecting layer and cathode layer.
4. display base plate according to claim 3 is it is characterised in that also include:
Insulating barrier, is arranged between described fingerprint sensor and the Rotating fields being adjacent.
5. display base plate according to any one of claim 1 to 4 is it is characterised in that described fingerprint sensor is self-induction
Formula electric capacity.
6. a kind of display base plate manufacture method is it is characterised in that include:
Thin film transistor (TFT) is formed on substrate；
Form organic luminous layer in described thin film transistor (TFT) away from the side of described substrate；
Wherein, when forming described organic luminous layer, described organic luminous layer forms fingerprint sensor.
7. manufacture method according to claim 6 is it is characterised in that in described thin film transistor (TFT) away from the one of described substrate
Side forms organic luminous layer and includes:
Form anode layer in described thin film transistor (TFT) away from the side of described substrate；
Form hole injection layer in described anode layer away from the side of described thin film transistor (TFT)；
Form hole transmission layer in described hole injection layer away from the side of described anode layer；
Form organic material layer in described hole transmission layer away from the side of described hole injection layer；
Form electron transfer layer in described organic material layer away from the side of described hole transmission layer；
Form electron injecting layer in described electron transfer layer away from the side of described organic material layer；
Form cathode layer in described electron injecting layer away from the side of described electron transfer layer.
8. manufacture method according to claim 7 is it is characterised in that form fingerprint sensor in described organic luminous layer
Including:
Form described fingerprint sensor between described anode layer and hole injection layer；
Or form described fingerprint sensor between described hole injection layer and hole transmission layer；
Or form described fingerprint sensor between described hole transmission layer and organic material layer；
Or form described fingerprint sensor between described organic material layer and electron transfer layer；
Or form described fingerprint sensor between described electron transfer layer and electron injecting layer；
Or form described fingerprint sensor between described electron injecting layer and cathode layer.
9. manufacture method according to claim 8 is it is characterised in that also include:
Form insulating barrier between described fingerprint sensor and the Rotating fields being adjacent.
10. the manufacture method according to any one of claim 6 to 9 is it is characterised in that described fingerprint sensor is self-induction
Formula electric capacity.
11. a kind of electronic equipments are it is characterised in that include:
Processor；
For storing the memorizer of processor executable；
Wherein, described electronic equipment also includes display base plate, and described display base plate includes:
Substrate；
Thin film transistor (TFT), is formed at the side of described substrate；
Organic luminous layer, is formed at the side away from described substrate for the described thin film transistor (TFT)；
Fingerprint sensor, is formed in described organic luminous layer.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107194345A (en) * | 2017-05-18 | 2017-09-22 | 上海思立微电子科技有限公司 | Electronic equipment, ultrasonic fingerprint identifying device and its manufacture method |
| CN107960021A (en) * | 2017-11-22 | 2018-04-24 | 广东欧珀移动通信有限公司 | Display screen component and electronic equipment |
| CN107977048A (en) * | 2017-11-22 | 2018-05-01 | 广东欧珀移动通信有限公司 | Display device and electronic equipment |
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| CN107194345A (en) * | 2017-05-18 | 2017-09-22 | 上海思立微电子科技有限公司 | Electronic equipment, ultrasonic fingerprint identifying device and its manufacture method |
| CN107960021A (en) * | 2017-11-22 | 2018-04-24 | 广东欧珀移动通信有限公司 | Display screen component and electronic equipment |
| CN107977048A (en) * | 2017-11-22 | 2018-05-01 | 广东欧珀移动通信有限公司 | Display device and electronic equipment |
| CN107977048B (en) * | 2017-11-22 | 2020-05-12 | Oppo广东移动通信有限公司 | Display device and electronic apparatus |
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| CN111129073A (en) * | 2018-10-30 | 2020-05-08 | 东丽先端材料研究开发（中国）有限公司 | Construct for organic EL display and organic EL display |
| CN111129073B (en) * | 2018-10-30 | 2023-02-03 | 东丽先端材料研究开发（中国）有限公司 | Construct for organic EL display and organic EL display |
| CN110147009A (en) * | 2019-04-30 | 2019-08-20 | 武汉华星光电技术有限公司 | Display panel and display device |
| WO2021189478A1 (en) * | 2020-03-27 | 2021-09-30 | 深圳市汇顶科技股份有限公司 | Fingerprint detection apparatus and electronic device |
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