CN106367734A - 探测管式pecvd石墨舟片温度的方法 - Google Patents

探测管式pecvd石墨舟片温度的方法 Download PDF

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CN106367734A
CN106367734A CN201610860447.5A CN201610860447A CN106367734A CN 106367734 A CN106367734 A CN 106367734A CN 201610860447 A CN201610860447 A CN 201610860447A CN 106367734 A CN106367734 A CN 106367734A
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temperature
graphite boat
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CN106367734B (zh
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鲁科
乔琦
钱洪强
陆红艳
黄海涛
陈如龙
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Wuxi Suntech Power Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67306Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract

本发明涉及一种探测管式PECVD石墨舟片温度的方法,其特征是:在所述石墨舟片上涂覆一层感温变色材料,或者将涂覆有感温变色材料的贴片粘贴于石墨舟片表面;所述感温变色材料至少包括一种变色温度为25~30℃的感温变色材料。所述感温变色材料采用一种,变色温度为25~30℃。所述感温变色材料采用多种,该多种感温变色材料的变色温度以温度梯度的形式分布。本发明所述探测管式PECVD石墨舟片温度的方法,能够快速识别石墨舟是否冷却至常温的方法。

Description

探测管式PECVD石墨舟片温度的方法
技术领域
本发明涉及一种探测管式PECVD石墨舟片温度的方法,属于太阳能电池生产技术领域。
背景技术
目前太阳能电池镀膜设备中管式PECVD设备采用石墨舟作为硅片的载具进入PECVD腔体内进行镀膜。
而在PECVD整个工艺过程中,石墨舟需要进入PECVD炉管内,升温至450℃左右进行工艺。在出舟后,需要进行冷却至常温,方可进行下料(将石墨舟内镀好膜的硅片卸至承载盒内)。因硅片和石墨舟是贴合在一起的,因此两者温度基本一致,若石墨舟未冷却至常温,有很大的概率在卸片过程中,将吸笔烫坏,以及硅片上会出现吸笔印的问题而降级,造成产品优质率降低。
发明内容
本发明的目的是克服现有技术中存在的不足,提供一种探测管式PECVD石墨舟片温度的方法,能够快速识别石墨舟是否冷却至常温的方法。
按照本发明提供的技术方案,所述一种探测管式PECVD石墨舟片温度的方法,其特征是:在所述石墨舟片上涂覆一层感温变色材料,或者将涂覆有感温变色材料的贴片粘贴于石墨舟片表面;所述感温变色材料包括至少一种变色温度为25~30℃的感温变色材料。
在一个具体实施方式中,所述感温变色材料采用一种,变色温度为25~30℃。
在一个具体实施方式中,所述感温变色材料采用多种,该多种感温变色材料的变色温度以温度梯度的形式分布。
在一个具体实施方式中,所述温度梯度为450℃、300℃、200℃、100℃、50℃、30℃、25℃。
在一个具体实施方式中,所述30℃变色的感温变色材料采用聚氧乙烯-聚氧丙烯-聚氧乙烯嵌段共聚物为温度敏感分子,加入琼脂等增稠剂,加入水搅拌均匀,冷却成膜。
在一个具体实施方式中,所述50℃变色的感温变色材料采用CoI2·2C6H12N4·10H2O。
在一个具体实施方式中,所述100℃变色的感温变色材料采用NiCl2·2C6H12N4·10H2O。
在一个具体实施方式中,所述200℃变色的感温变色材料采用BiVO4
在一个具体实施方式中,所述300℃变色的感温变色材料采用7Bi2O3·Nb2O5
在一个具体实施方式中,所述感温变色材料耐500℃高温。
本发明所述探测管式PECVD石墨舟片温度的方法,能够快速识别石墨舟是否冷却至常温的方法。
附图说明
图1-1为本发明所述石墨舟片上涂覆一种感温变色材料的示意图。
图1-2为本发明所述石墨舟片上涂覆一种感温变色材料在高温状态下的示意图。
图2-1为涂覆多种感温变色材料的石墨舟片在450℃时的示意图。
图2-2为涂覆多种感温变色材料的石墨舟片在300℃时的示意图。
图2-3为涂覆多种感温变色材料的石墨舟片在200℃时的示意图。
图2-4为涂覆多种感温变色材料的石墨舟片在100℃时的示意图。
图2-5为涂覆多种感温变色材料的石墨舟片在50℃时的示意图。
图2-6为涂覆多种感温变色材料的石墨舟片在30℃时的示意图。
图2-7为涂覆多种感温变色材料的石墨舟片在25℃时的示意图。
图3为高温卸载片子产生的吸笔(吸盘)印的示意图。
图4为采用本发明所述探测方法确定卸片温度情况下无吸笔印产生的示意图。
具体实施方式
下面结合具体附图对本发明作进一步说明。
本发明所述探测管式PECVD石墨舟片温度的方法,具体为:在所述石墨舟片上涂覆一层感温变色材料(图中A所示),或者将涂覆有感温变色材料的贴片粘贴于石墨舟片表面。
如图1-1、图1-2所示,所述感温变色材料可以采用一种,感温变色材料的变色温度为25~30℃,当石墨舟片温度<25~30℃时,该感温变色材料显示一种颜色(如图1-1所示),当石墨舟片温度≥25~30℃时,该感温变色材料显示另一种颜色(如图1-2所示)。通过观察此感温变色材料的颜色变化,便能识别出能否进行卸片动作。
如图2-1~图2-7所示,所述感温变色材料采用6种,以用于识别不同温度梯度,这6种感温变色材料的变色温度梯度分别为450℃、300℃、200℃、100℃、50℃、30℃、25℃;由多种感温变色材料做成的色阶图,能够更好地掌握石墨舟片的温度情况,更利于产线管控。
本发明所述的感温变色材料需要耐500℃高温。由于现有技术中存在多种各个变色温度的感温变色材料,因而从现有的商品中选择满足本发明要求的感温变色材料,没有具体限制,只要不对本发明的发明目的产生限制即可。
具体地,30℃变色的感温变色材料如:采用聚氧乙烯-聚氧丙烯-聚氧乙烯嵌段共聚物为温度敏感分子,加入琼脂等增稠剂,加入水搅拌均匀,冷却成膜。所得到的膜在室温25℃无色透明,30℃时开始变色。
50℃变色的感温变色材料如CoI2·2C6H12N4·10H2O。100℃变色的感温变色材料如NiCl2·2C6H12N4·10H2O。
200℃变色的感温变色材料如BiVO4,该材料在120℃时为橙色,200℃时为红色。
300℃变色的感温变色材料采用7Bi2O3·Nb2O5作为热致变色材料,该材料从室温下的淡黄色变化至300℃的橙色,至400℃时的深橙色。
如图3所示,为高温卸载片子产生的吸笔(吸盘)印,需要降级。图4为采用本发明所述探测方法确定卸片温度情况下,无吸笔印产生。

Claims (10)

1.一种探测管式PECVD石墨舟片温度的方法,其特征是:在所述石墨舟片上涂覆一层感温变色材料,或者将涂覆有感温变色材料的贴片粘贴于石墨舟片表面;所述感温变色材料包括至少一种变色温度为25~30℃的感温变色材料。
2.如权利要求1所述的探测管式PECVD石墨舟片温度的方法,其特征是:所述感温变色材料采用一种,变色温度为25~30℃。
3.如权利要求1所述的探测管式PECVD石墨舟片温度的方法,其特征是:所述感温变色材料采用多种,该多种感温变色材料的变色温度以温度梯度的形式分布。
4.如权利要求3所述的探测管式PECVD石墨舟片温度的方法,其特征是:所述温度梯度为450℃、300℃、200℃、100℃、50℃、30℃、25℃。
5.如权利要求4所述的探测管式PECVD石墨舟片温度的方法,其特征是:所述30℃变色的感温变色材料采用聚氧乙烯-聚氧丙烯-聚氧乙烯嵌段共聚物为温度敏感分子,加入琼脂等增稠剂,加入水搅拌均匀,冷却成膜。
6.如权利要求4所述的探测管式PECVD石墨舟片温度的方法,其特征是:所述50℃变色的感温变色材料采用CoI2·2C6H12N4·10H2O。
7.如权利要求4所述的探测管式PECVD石墨舟片温度的方法,其特征是:所述100℃变色的感温变色材料采用NiCl2·2C6H12N4·10H2O。
8.如权利要求4所述的探测管式PECVD石墨舟片温度的方法,其特征是:所述200℃变色的感温变色材料采用BiVO4
9.如权利要求4所述的探测管式PECVD石墨舟片温度的方法,其特征是:所述300℃变色的感温变色材料采用7Bi2O3·Nb2O5
10.如权利要求1所述的探测管式PECVD石墨舟片温度的方法,其特征是:所述感温变色材料耐500℃高温。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1134969A (zh) * 1995-04-29 1996-11-06 宋文学 可逆热色示温材料及其制做方法
CN2620264Y (zh) * 2002-12-18 2004-06-09 技嘉科技股份有限公司 机壳温度检测部件
CN104458051A (zh) * 2013-09-18 2015-03-25 西安吉帑电子科技有限公司 具有色变的发电机温度检测机构

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1134969A (zh) * 1995-04-29 1996-11-06 宋文学 可逆热色示温材料及其制做方法
CN2620264Y (zh) * 2002-12-18 2004-06-09 技嘉科技股份有限公司 机壳温度检测部件
CN104458051A (zh) * 2013-09-18 2015-03-25 西安吉帑电子科技有限公司 具有色变的发电机温度检测机构

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