CN106356469A - 3D printed QLED (quantum dot light-emitting diode) adopting inverted structure and preparation method - Google Patents
3D printed QLED (quantum dot light-emitting diode) adopting inverted structure and preparation method Download PDFInfo
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- CN106356469A CN106356469A CN201610801831.8A CN201610801831A CN106356469A CN 106356469 A CN106356469 A CN 106356469A CN 201610801831 A CN201610801831 A CN 201610801831A CN 106356469 A CN106356469 A CN 106356469A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
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Abstract
The invention discloses a 3D printed QLED (quantum dot light-emitting diode) adopting an inverted structure and a preparation method. The method comprises the following steps: hydrophilic electron injection layer ink is printed in a set area of a cathode layer in a 3D manner, and an electron injection layer is obtained through curing; a hydrophobic quantum dot luminescent layer ink is printed on the electron injection layer in a 3D manner, and a quantum dot luminescent layer is obtained through curing; a hydrophilic hole transporting layer ink is printed on the quantum dot luminescent layer in a 3D manner, and a hole transporting layer is obtained through curing; a hydrophobic hole injection layer ink is printed on the hole transporting layer in a 3D manner, and a hole injection layer is obtained through curing; an anode layer ink is printed on the hole injection layer in a 3D manner, and the QLED adopting the inverted structure is obtained. The QLED can be prepared through 3D printing, is novel and more stable in structure and high in light emitting efficiency, and a pattern printing area can be set flexibly.
Description
Technical field
The present invention relates to light emitting diode with quantum dots technical field, more particularly, to a kind of 3d prints the quantum dot inverting structure
Light emitting diode and preparation method.
Background technology
Light emitting diode with quantum dots device (quantum dot light-emitting diode, qled) is as a new generation
Display Technique be subject to height Innovation Input.The device design of light emitting diode with quantum dots device and operation principle and organic
Optical diode device (organic light-emitting diode, oled) is similar.Compared to general organic light-emitting diodes
Tube device, light emitting diode with quantum dots device is to be used quantum dot to replace luminous organic material to set as the display of emitting layer material
Standby.Organic Light Emitting Diode has restriction in terms of stability and color representation.And light emitting diode with quantum dots device can pass through
The dimensional homogeneity controlling quantum dot produces preferable Natural color, has more excellent color saturation, and its electric current effect
Rate is poor unlike Organic Light Emitting Diode, and especially light emitting diode with quantum dots device performance quickly grows in recent years, and it is every
Photoelectric properties index is near or above Organic Light Emitting Diode oled Display Technique, so light emitting diode with quantum dots device
It is focused into the contenders of Display Technique Organic Light Emitting Diode oled of future generation.
Fast development with printed electronics and the research of printable electronic material are goed deep into, by ink jet type printing, hole
The electronics with the various functions characteristic such as conduction, dielectric, magnetic, insulation is starched by the modes such as plate printing, silk screen printing, cylinder transfer
Material manufactures the various electronic components such as wire, resistance, electric capacity, inductance, quasiconductor, it is possible to achieve in high precision with inexpensive accurate electricity
Son produces.And the cooperation that it is critical only that printable electronic material and new printing technique of printed electronics industry, it studies base
This content one is that can e-inks be printed by the parameter of setting of printer, path, and two is the electronics oil being printed
Can ink form stable presetting pattern and pattern on backing material.In the recent period, printing Organic Light Emitting Diode has been
Realize and tentatively obtain good photoelectric properties parameter.In view of the design of Organic Light Emitting Diode and light emitting diode with quantum dots and
Prepare similarity, people start to explore feasibility and the implementation route of printing light emitting diode with quantum dots.
3d prints, and is also called " increasing material manufacturing ", develops rapidly as a kind of rapid shaping technique, is that one kind is with mathematical model
Basis, with powdery metal or plastics etc. can jointing material, by printing device, material is successively added thus manufacturing
Go out the technology of three-dimensional body.The shower nozzle precision of printer is optional, and printing interlamellar spacing is adjustable, therefore can print various sizes, essence
The product of degree, and reduce the cost of mould design and manufacture in a large number.3d prints to printed electronic and provides a kind of brand-new manufacture method.
3d prints light emitting diode with quantum dots needs the challenge difficult problem solving to have three aspects: first, the electricity of composition device
Pole material, semi-conducting material and macromolecular material need to prepare with the ink form that 3d printer can print, in these material quilts
There is after printing corresponding function；Second, 3d print carry out each layer function file printing during it is ensured that each layer
The marking ink of functional material is orthogonal immiscible with a layer function material below, in order to avoid tying to functional layer below when printing
It is configured to affect；Third, the pattern topology of the printable functional layer interweaving layer by layer can directly design adjustment by cad.
Content of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of 3d prints the quantum dot inverting structure
Light emitting diode and preparation method print, by 3d, the quantum dot light emitting that preparation inverts structure it is intended to solving existing method and not existing
The problem of diode.
For solving an above difficult problem, technical scheme is as follows:
A kind of 3d prints the preparation method of the light emitting diode with quantum dots inverting structure, wherein, including step:
A, on 3d mapping software design invert the overall dimensions of light emitting diode with quantum dots and the distributed model of structure, described anti-
The light emitting diode with quantum dots putting structure includes cathode layer, electron injecting layer, quantum dot light emitting layer, hole biography from bottom to top successively
Defeated layer, hole injection layer and anode layer；
B, the 3d model document being done 3d mapping software are converted into printable file；
C, by corresponding for printable file generated printing path and use parameter with 3d ink-jet printer, 3d ink-jet printer according to
The printing path generating moves, and near cathode layer；
D, 3d ink-jet printer by hydrophilic electron injecting layer ink printed cathode layer setting regions, solidification obtain hydrophilic
The electron injecting layer of property；
E, by hydrophobic quantum dot light emitting layer ink printed on electron injecting layer, solidification obtain hydrophobic quantum dot light emitting
Layer；
F, by hydrophilic hole transmission layer ink printed on quantum dot light emitting layer, solidification obtain hydrophilic hole transport
Layer；
G, by hydrophobic hole injection layer ink printed on hole transmission layer, solidification obtain hydrophobic hole injection layer；
H, anode material is deposited with hole injection layer, or by anode layer ink printed on hole injection layer, obtains anti-
Put the light emitting diode with quantum dots of structure.
The preparation method of the described light emitting diode with quantum dots inverting structure, wherein, described cathode layer be ito substrate or
Person's negative electrode.
Described 3d prints the preparation method of the light emitting diode with quantum dots inverting structure, wherein, described hydrophilic electricity
Sub- implanted layer ink is zno, tio2、wo3、sno2, alzno, znsno, insno, tpbi (1,3,5- tri- (n- phenyl benzo miaow
Azoles -2- base) benzene), at least one in taz (3- (4- xenyl) -4- phenyl -5- tert-butyl phenyl -1,2,4- triazoles).
Described 3d prints the preparation method of the light emitting diode with quantum dots inverting structure, wherein, described hydrophilic electricity
Solvent used by sub- implanted layer ink is at least one in alcohols, ketone and esters.
Described 3d prints the preparation method of the light emitting diode with quantum dots inverting structure, wherein, described hydrophobic amount
Quantum dot in son point luminescent layer ink is Binary-phase, ternary phase, quaternary phase quantum dot and nuclear shell structure quantum point or alloy
Structure quantum point.Binary-phase quantum dot includes the not limited to this such as cdse, cds, pbse, pbs, zns, inp, hgs, ags, ternary phase
Quantum dot includes znxcd1-xs/zns、cuins、pbsexs1-xThe not limited to this such as/pbs, quaternary phase quantum dot include cuinses,
znxcd1-xseys1-y、znxcd1-xThe not limited to this such as se/zns, cdse/cds, inp/zns, cuins/zns.
Described 3d prints the preparation method of the light emitting diode with quantum dots inverting structure, wherein, described hydrophobic amount
Solvent used by son point luminescent layer ink is chain alkane, in cycloalkane, halogenated alkane, fragrant hydrocarbons and their derivates or a combination thereof
At least one.
Described 3d prints the preparation method of the light emitting diode with quantum dots inverting structure, wherein, described hydrophilic sky
Cave transport layer ink be poly-tpd, pvk, cbp (4,4 '-n, n '-two carbazole-biphenyl), α-npd (n, n '-diphenyl-n, n '-
Two (1- naphthyls) -1,1 '-xenyl -4,4 "-diamidogen), tcta (4,4 ', 4 "-three (n- carbazyl)-triphenylamine), dntpd (n,
N '-two (4- (n, n '-diphenyl-amino) phenyl)-n, n '-diphenylbenzidine), one or more of nio；Described hydrophilic
Property the solvent used by hole transmission layer ink be alcohols, ketone, at least one in esters.
Described 3d prints the preparation method of the light emitting diode with quantum dots inverting structure, wherein, described hydrophobic sky
Cave implanted layer ink is pedot:pss, molybdenum oxide, vanadium oxide or tungsten oxide；Used by described hydrophobic hole injection layer ink
Solvent be the non-polar solven such as toluene, chloroform, normal hexane, hexamethylene, chlorobenzene, normal octane at least one.
Described 3d prints the preparation method of the light emitting diode with quantum dots inverting structure, wherein, described anode layer ink
For aluminum metal liquid ink or gallium-indium alloy liquid metal ink.
A kind of 3d prints the light emitting diode with quantum dots inverting structure, wherein, is printed anti-using as above arbitrary described 3d
The preparation method putting the light emitting diode with quantum dots of structure is prepared from, and described 3d prints quantum dot light emitting two pole inverting structure
Pipe includes cathode layer, electron injecting layer, quantum dot light emitting layer, hole transmission layer, hole injection layer and anode from bottom to top successively
Layer.
Beneficial effect: the present invention prints, by 3d, the light emitting diode with quantum dots that preparation inverts structure, and prepared inverts knot
The light emitting diode with quantum dots structure of structure is novel and more stable, and luminous efficiency is high, and print pattern region can flexibly set simultaneously.
Brief description
Fig. 1 is that a kind of 3d of the present invention prints the preparation method preferred embodiment of the light emitting diode with quantum dots inverting structure
Flow chart.
Fig. 2 is that a kind of 3d of the present invention prints the structural representation of the light emitting diode with quantum dots preferred embodiment inverting structure
Figure.
Specific embodiment
The present invention provides a kind of 3d to print light emitting diode with quantum dots and the preparation method inverting structure, for making the present invention's
Purpose, technical scheme and effect are clearer, clear and definite, and the present invention is described in more detail below.It should be appreciated that this place is retouched
The specific embodiment stated only in order to explain the present invention, is not intended to limit the present invention.
3d of the present invention prints the light emitting diode with quantum dots that preparation inverts structure, specifically includes quantum dot light emitting layer ink and joins
Put, each transport layer material ink configuration, 3d prints the light emitting diode with quantum dots flow process inverting structure.
Refer to Fig. 1, Fig. 1 is that a kind of 3d of the present invention prints the preparation method of the light emitting diode with quantum dots inverting structure
The flow chart of preferred embodiment, as illustrated, it includes step:
S100, on 3d mapping software design invert the overall dimensions of light emitting diode with quantum dots and the distributed model of structure, institute
State and invert the light emitting diode with quantum dots of structure and include cathode layer, electron injecting layer, quantum dot light emitting layer, sky from bottom to top successively
Cave transport layer, hole injection layer and anode layer；
In step s100, described 3d mapping software can be the 3d mapping software such as autocad, pro-e.
S200, the 3d model document being done 3d mapping software are converted into printable file；
S300, by corresponding for printable file generated printing path and use parameter with 3d ink-jet printer, 3d ink-jet printer
Move according to the printing path generating, and near cathode layer；
Preferably, described cathode layer can be ito substrate, and that is, ito uses as cathode material.
Hydrophilic electron injecting layer ink printed in the setting regions of cathode layer, is solidified by s400,3d ink-jet printer
Obtain hydrophilic electron injecting layer；
Step s400 specifically, the shower nozzle of 3d ink-jet printer by hydrophilic electron injecting layer ink printed in cathode layer (such as
Ito substrate) setting regions, after the completion of anneal (as 120 DEG C) at 110 ~ 130 DEG C, curing molding, obtain hydrophilic electronics note
Enter layer.
Preferably, described hydrophilic electron injecting layer ink can be zno, tio2、wo3、sno2、alzno、znsno、
Insno and tpbi (1,3,5- tri- (n- phenylbenzimidazol -2- base) benzene) or taz (3- (4- xenyl) -4- phenyl -5- tert-
Butyl phenyl -1,2,4- triazoles) at least one.Solvent used by described hydrophilic electron injecting layer ink is that polarity is molten
Agent, the polar solvent used by described hydrophilic electron injecting layer ink is at least one in alcohols, ketone and esters.
S500, by hydrophobic quantum dot light emitting layer ink printed on electron injecting layer, solidification obtain hydrophobic amount
Son point luminescent layer；
Step s500 is specifically, by hydrophobic quantum dot light emitting layer ink printed on electron injecting layer, purple along Print direction
Outer photocuring, obtains hydrophobic quantum dot light emitting layer.
Preferably, the quantum dot in described hydrophobic quantum dot light emitting layer ink can be Binary-phase, ternary phase, quaternary
One of phase quantum dot, nuclear shell structure quantum point, alloy structure quantum dot, described nuclear shell structure quantum point is by above-mentioned binary
At least two compositions in phase, ternary phase and quaternary phase quantum dot；Wherein, Binary-phase quantum dot can be but be not limited to
At least one in cdse, cds, pbse, pbs, zns, inp, hgs, ags；Ternary phase quantum dot can be but be not limited to
znxcd1-xs/zns、cuins、pbsexs1-xAt least one in/pbs；Quaternary phase quantum dot can for but be not limited to cuinses,
znxcd1-xseys1-y、znxcd1-xAt least one in se/zns, cdse/cds, inp/zns, cuins/zns.Described hydrophobicity
The solvent used by quantum dot light emitting layer ink be non-polar organic solvent, used by described hydrophobic quantum dot light emitting layer ink
Non-polar organic solvent can for chain alkane, cycloalkane, the derivant of halogenated alkane, aromatic hydrocarbon and above-mentioned substance and
At least one in a combination thereof.
S600, by hydrophilic hole transmission layer ink printed on quantum dot light emitting layer, solidification obtain hydrophilic sky
Cave transport layer；
Step s600 specifically, by hydrophilic hole transmission layer ink printed on quantum dot light emitting layer, after the completion of 190 ~
210 DEG C of annealing (as 200 DEG C), curing molding, obtain hydrophilic hole transmission layer.
Preferably, described hydrophilic hole transmission layer ink can for poly-tpd, pvk, cbp (4,4 '-n, n '-two
Carbazole-biphenyl), α-npd (n, n '-diphenyl-n, n '-two (1- naphthyl) -1,1 '-xenyl -4,4 "-diamidogen), tcta (4,
4 ', 4 "-three (n- carbazyl)-triphenylamine), dntpd (n, n '-two (4- (n, n '-diphenyl-amino) phenyl)-n, n '-hexichol
Base benzidine), one or more of nio；Solvent used by described hydrophilic hole transmission layer ink is polar solvent, institute
State at least one that the polar solvent used by hydrophilic hole transmission layer ink is in alcohols, ketone or esters.
S700, by hydrophobic hole injection layer ink printed on hole transmission layer, solidification obtain hydrophobic hole
Implanted layer；
Step s700 specifically, by hydrophobic hole injection layer ink printed on hole transmission layer, after the completion of 140 ~ 160
DEG C annealing (as 150 DEG C), curing molding, obtain hydrophobic hole injection layer.
Preferably, described hydrophobic hole injection layer ink can be pedot:pss, molybdenum oxide, vanadium oxide or oxidation
Tungsten；Solvent used by described hydrophobic hole injection layer ink is non-polar solven, used by described hole injection layer ink
Non-polar solven is at least one in the non-polar solven such as toluene, chloroform, normal hexane, hexamethylene, chlorobenzene, normal octane.
S800, anode material is deposited with hole injection layer, or by anode layer ink printed on hole injection layer,
Obtain the light emitting diode with quantum dots inverting structure.
Step s800 specifically, anode material (as aluminum) is deposited with hole injection layer, or by anode layer ink (such as
Aluminum metal liquid ink) it is printed upon on hole injection layer, obtain the light emitting diode with quantum dots inverting structure.The present invention can also
Anode material gallium-indium alloy liquid metal is printed upon on hole injection layer, ultraviolet light polymerization, obtains the quantum dot inverting structure
Light emitting diode.Or by anode layer ink golden nanometer particle ink printed on electron injecting layer, 190 ~ 210 DEG C (such as 200
DEG C) annealing, curing molding, obtain the light emitting diode with quantum dots inverting structure.
The method of the light emitting diode with quantum dots device inverting structure is printed by the 3d of the present invention and its printed material is joined
Put, prepared device architecture is novel and more stable, luminous efficiency is high, and print pattern region can flexibly set simultaneously.Using 3d
Print and to prepare in the light emitting diode with quantum dots device process inverting structure, can be by controlling the precision of 3d printer head
And the spacing of printable layer realizes size and the precision of Stereo control product, and the quantum dot light emitting inverting structure can be met
Diode component miniaturization, the demand of complex-shapedization.In addition, 3d Method of printing of the present invention, can achieve various printable electronics
The integrated preparation of solid of material and flexible modulation.
Based on said method, the present invention also provides a kind of 3d to print the light emitting diode with quantum dots inverting structure, and it adopts
As above the preparation method of arbitrary described light emitting diode with quantum dots inverting structure is prepared from, and described 3d prints and inverts structure
Light emitting diode with quantum dots include successively from bottom to top cathode layer, electron injecting layer, quantum dot light emitting layer, hole transmission layer,
Hole injection layer and anode layer.The device architecture being obtained by said method of the present invention is novel and more stable, and luminous efficiency is high,
Print pattern region can flexibly set simultaneously.
Fig. 2 is a kind of structural representation of light emitting diode with quantum dots preferred embodiment inverting structure of the present invention, such as
Shown in Fig. 2, include successively from bottom to top: cathode layer 1, electron injecting layer 2, quantum dot light emitting layer 3, hole transmission layer 4, hole note
Enter layer 5 and anode layer 6.3d of the present invention print prepare invert structure light emitting diode with quantum dots device architecture novel and
More stable, luminous efficiency is high, and print pattern region can flexibly set simultaneously.
Below by embodiment, the present invention is described in detail.
The preparation process inverting the light emitting diode with quantum dots of structure is as follows:
1), on the ito substrate of one piece of 2 × 2cm, with aerosol jet 300p type 3d ink-jet printer, printable file is given birth to
Become corresponding path and use parameter, 3d ink-jet printer moves according to the printing path setting, near ito substrate, ito substrate
As negative electrode；
2), use 10 μm of internal diameter shower nozzle by electron injecting layer zno ink printed ito cathode base setting regions, after the completion of
Anneal at 200 DEG C, curing molding obtains zno electron injecting layer；
3), with the shower nozzle of 108 μm of internal diameter, the dichloro-benzenes solvent-based inks of quantum dot cdse/cds are printed upon zno electron injecting layer
On, cdse/cds quantum dot layer thickness is about 15nm, along Print direction ultraviolet light polymerization, obtains cdse/cds quantum dot light emitting
Layer；
4), use 10 μm of internal diameter shower nozzle by the ink printed of hole transmission layer poly-tpd on cds quantum dot light emitting layer,
Poly-tpd thickness degree is 10nm, and solidification obtains poly-tpd hole transmission layer；
5), with the shower nozzle of 10 μm of internal diameter, the toluene ink of hole injection layer material pedot:pss is printed upon poly-tpd hole
In transport layer, after the completion of 120 DEG C anneal, curing molding thickness be 30nm, obtain pedot:pss hole injection layer；
6), anode material aluminum metal liquid ink is printed upon on pedot:pss hole injection layer, obtains the quantum inverting structure
Point luminescent diode.
In sum, the present invention provides a kind of light emitting diode with quantum dots inverting structure and preparation method, by this
The 3d of invention prints and inverts the method for light emitting diode with quantum dots device of structure and its printed material configuration, prepared device junction
Structure is novel and more stable, and luminous efficiency is high, and print pattern region can flexibly set simultaneously.Invert knot printing using 3d to prepare
In the light emitting diode with quantum dots device process of structure, can be by controlling the precision of 3d printer head and the spacing of printable layer
Realize size and the precision of Stereo control product, and can meet invert structure light emitting diode with quantum dots device miniature
Change, the demand of complex-shapedization.In addition, 3d Method of printing of the present invention, can achieve that the solid of various printable electronic materials is integrated
Preparation and flexible modulation.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can
To be improved according to the above description or to convert, all these modifications and variations all should belong to the guarantor of claims of the present invention
Shield scope.
Claims (10)
1. a kind of 3d prints the preparation method of the light emitting diode with quantum dots inverting structure it is characterised in that including step:
A, on 3d mapping software design invert the overall dimensions of light emitting diode with quantum dots and the distributed model of structure, described anti-
The light emitting diode with quantum dots putting structure includes cathode layer, electron injecting layer, quantum dot light emitting layer, hole biography from bottom to top successively
Defeated layer, hole injection layer and anode layer；
B, the 3d model document being done 3d mapping software are converted into printable file；
C, by corresponding for printable file generated printing path and use parameter with 3d ink-jet printer, 3d ink-jet printer according to
The printing path generating moves, and near cathode layer；
D, 3d ink-jet printer by hydrophilic electron injecting layer ink printed cathode layer setting regions, solidification obtain hydrophilic
The electron injecting layer of property；
E, by hydrophobic quantum dot light emitting layer ink printed on electron injecting layer, solidification obtain hydrophobic quantum dot light emitting
Layer；
F, by hydrophilic hole transmission layer ink printed on quantum dot light emitting layer, solidification obtain hydrophilic hole transport
Layer；
G, by hydrophobic hole injection layer ink printed on hole transmission layer, solidification obtain hydrophobic hole injection layer；
H, anode material is deposited with hole injection layer, or by anode layer ink printed on hole injection layer, obtains anti-
Put the light emitting diode with quantum dots of structure.
2. 3d according to claim 1 prints the preparation method of the light emitting diode with quantum dots inverting structure, and its feature exists
In described cathode layer is ito substrate or negative electrode.
3. 3d according to claim 1 prints the preparation method of the light emitting diode with quantum dots inverting structure, and its feature exists
In described hydrophilic electron injecting layer ink is zno, tio2、wo3、sno2, in alzno, znsno, insno, tpbi, taz
At least one.
4. 3d according to claim 1 prints the preparation method of the light emitting diode with quantum dots inverting structure, and its feature exists
In the solvent used by described hydrophilic electron injecting layer ink is at least one in alcohols, ketone and esters.
5. 3d according to claim 1 prints the preparation method of the light emitting diode with quantum dots inverting structure, and its feature exists
In the quantum dot in described hydrophobic quantum dot light emitting layer ink is Binary-phase, ternary phase, quaternary phase quantum dot, nucleocapsid knot
One of structure quantum dot, alloy structure quantum dot, described nuclear shell structure quantum point is by Binary-phase, ternary phase and quaternary phasor
At least two compositions in son point；Wherein, Binary-phase quantum dot is in cdse, cds, pbse, pbs, zns, inp, hgs, ags
At least one；Ternary phase quantum dot is znxcd1-xs/zns、cuins、pbsexs1-xAt least one in/pbs；Quaternary phasor
Son is put as cuinses, znxcd1-xseys1-y、znxcd1-xIn se/zns, cdse/cds, inp/zns, cuins/zns at least one
Kind.
6. 3d according to claim 1 prints the preparation method of the light emitting diode with quantum dots inverting structure, and its feature exists
In, the solvent used by described hydrophobic quantum dot light emitting layer ink be chain alkane, cycloalkane, halogenated alkane, aromatic hydrocarbon and
At least one in its derivant or a combination thereof.
7. 3d according to claim 1 prints the preparation method of the light emitting diode with quantum dots inverting structure, and its feature exists
In described hydrophilic hole transmission layer ink is poly-tpd, pvk, cbp, α-npd, one of tcta, dntpd, nio
Or it is multiple；Solvent used by described hydrophilic hole transmission layer ink is alcohols, ketone, at least one in esters.
8. 3d according to claim 1 prints the preparation method of the light emitting diode with quantum dots inverting structure, and its feature exists
In described hydrophobic hole injection layer ink is pedot:pss, molybdenum oxide, vanadium oxide or tungsten oxide；Described hydrophobic sky
Solvent used by the implanted layer ink of cave is toluene, chloroform, normal hexane, hexamethylene, chlorobenzene, at least one in normal octane.
9. 3d according to claim 1 prints the preparation method of the light emitting diode with quantum dots inverting structure, and its feature exists
In described anode layer ink is aluminum metal liquid ink or gallium-indium alloy liquid metal ink.
10. a kind of 3d prints the light emitting diode with quantum dots inverting structure it is characterised in that adopting as arbitrary in claim 1 ~ 9
The preparation method of the described light emitting diode with quantum dots inverting structure is prepared from, and described 3d prints the quantum dot inverting structure
Light emitting diode includes cathode layer, electron injecting layer, quantum dot light emitting layer, hole transmission layer, hole injection from bottom to top successively
Layer and anode layer.
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| CN107214944A (en) * | 2017-06-21 | 2017-09-29 | 苏州奥特科然医疗科技有限公司 | A kind of Method of printing |
| CN107293572A (en) * | 2017-06-21 | 2017-10-24 | 武汉华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN109103095A (en) * | 2018-08-03 | 2018-12-28 | 清华大学 | A kind of diode and preparation method thereof |
| CN109705663A (en) * | 2017-10-25 | 2019-05-03 | Tcl集团股份有限公司 | A kind of compound ink and preparation method thereof, device |
| CN110421839A (en) * | 2019-07-26 | 2019-11-08 | 成都职业技术学院 | Diode and its Method of printing based on 3D printing |
| WO2020199281A1 (en) * | 2019-04-04 | 2020-10-08 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting device and manufacturing method therefor |
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| CN109103095A (en) * | 2018-08-03 | 2018-12-28 | 清华大学 | A kind of diode and preparation method thereof |
| WO2020199281A1 (en) * | 2019-04-04 | 2020-10-08 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting device and manufacturing method therefor |
| CN110421839A (en) * | 2019-07-26 | 2019-11-08 | 成都职业技术学院 | Diode and its Method of printing based on 3D printing |
| CN110421839B (en) * | 2019-07-26 | 2021-09-28 | 成都职业技术学院 | Diode based on 3D printing and printing method thereof |
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