CN106356353A - Substrate and substrate-applying welding structure and welding method - Google Patents
Substrate and substrate-applying welding structure and welding method Download PDFInfo
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- CN106356353A CN106356353A CN201510411655.2A CN201510411655A CN106356353A CN 106356353 A CN106356353 A CN 106356353A CN 201510411655 A CN201510411655 A CN 201510411655A CN 106356353 A CN106356353 A CN 106356353A
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Abstract
The invention discloses a substrate and a substrate-applying welding structure and a welding method. The substrate is a semiconductor substrate, wires and bonding pads are arranged on the semiconductor substrate, the wires are used for transmitting electric signals, the bonding pads are electrically connected with the wires and used for welding of external devices, and the semiconductor substrate is provided with welding-resistant grooves close to outer sides of the bonding pads. By the welding-resistant grooves in the outer sides of the bonding pads, excessive welding flux can be absorbed by the welding-resistant grooves in a welding process, so that overflowing of the welding flux is prevented. The semiconductor substrate is adopted, high-precision welding-resistant grooves can be made by means of photoetching and etching, and applicability to substrates with wire spacing being 50micron or below is realized.
Description
Technical field
The invention belongs to micro-joining technical field is and in particular to a kind of substrate and welding structure and the welding method of applying this substrate.
Background technology
In prior art, chip can be electrically connected with by solder welding procedures such as golden stannum with substrate (glass or pottery).Because the distance between two pads are less and less, because golden stannum is in the presence of heating and pressure in welding process, the solder of molten condition easily overflows toward surrounding, is so easy to the pad short circuit with surrounding.
Shown in ginseng Fig. 1, substrate 10 ' is provided with wire 20 ', and wire 20 ' is provided with pad 30 ', and chip 50 ' is passed through pad 30 ' and is electrically connected with line layer.Make substrate 10 ' at present and generally use pottery or glass, wire 20 ' and pad 30 ' (golden stannum) are made by photoetching and sputtering technology.The method avoiding excessive stannum is mainly passed through to reduce the content of solder, is so difficult to meet the requirement of shearing force, chip 50 ' is easy to depart from.Between pad distance than larger in the case of, can be by adding welding resistance dam 40 ', the material on welding resistance dam 40 ' is usually polyimides and metallic nickel.But metallic nickel is due to being conductive material, polyimides are insulant, if undersized between pad, metallic nickel is difficult to solve the problems, such as to prevent short circuit between stannum and pad of overflowing, and polyimide material is difficult to process less than less than 50 μm of distance between centers of tracks, thus for solder pad space length be less than 50 μm be difficult to make.
Content of the invention
The application one embodiment provides a kind of substrate, described substrate is semiconductor substrate, wire for transmitting the signal of telecommunication is formed with described semiconductor substrate and is electrically connected with the pad for welding external devices with described wire, on described semiconductor substrate, the outside in adjacent pads is formed with welding resistance groove.
In one embodiment, described semiconductor substrate is si substrate or sic substrate.
In one embodiment, described substrate includes some pads and welding resistance groove, the mutually isolated setting of welding resistance groove outside each pad.
In one embodiment, the length of described pad is less than the length of welding resistance groove outside described pad.
In one embodiment, the width of described pad is equal to the width of wire, and described welding resistance groove is arranged against pad.
In one embodiment, described welding resistance groove is formed by etching technics, and the width of described welding resistance groove is 1 ~ 25 μm, and the depth of welding resistance groove is more than or equal to 2 μm.
In one embodiment, described welding resistance groove is located at the end of wire, and the section of described welding resistance groove is in straight groove or arcuate groove or a combination thereof of bending.
The application one embodiment also provides a kind of welding structure, described welding structure includes substrate and the power device being welded to connect with described substrate, described substrate is semiconductor substrate, wire for transmitting the signal of telecommunication is formed with described semiconductor substrate and is electrically connected with the pad for welding external devices with described wire, on described semiconductor substrate, the outside in adjacent pads is formed with welding resistance groove.
The application one embodiment also provides a kind of welding method, and described welding method includes:
There is provided a substrate, described substrate is semiconductor substrate；
Formation welding resistance groove is performed etching by etching technics to substrate；
It is formed with the wire for transmitting the signal of telecommunication on a semiconductor substrate and be electrically connected with the pad for welding external devices with wire, wherein, the outside of described welding resistance groove adjacent pads；
Bonding power device on pad, forms the welding structure that power device is electrically connected with line layer.
In one embodiment, the width of described welding resistance groove is 1 ~ 25 μm, and the depth of welding resistance groove is more than or equal to 2 μm.Compared with prior art, the application has the advantages that
Outside pad on a semiconductor substrate, welding resistance groove is set, in welding process, welding resistance groove can absorb unnecessary solder, prevents solder from overflowing.
Pottery or the glass substrate of less than 50 μm distance between centers of tracks cannot be processed in prior art, in the application, adopt semiconductor substrate, high-precision welding resistance groove can be made using photoetching and etching technics it is adaptable to the substrate of less than 50 μm distance between centers of tracks.
Meanwhile, the substrate of the application and welding structure low production cost be it is not necessary to extra material does welding resistance dam, and welding method is simple, improves production efficiency.
Brief description
Fig. 1 is the planar structure schematic diagram of glass or ceramic substrate in prior art.
Fig. 2 is the planar structure schematic diagram of semiconductor substrate in the application first embodiment.
Fig. 3 is the planar structure schematic diagram of semiconductor substrate in the application second embodiment.
Fig. 4 is welded cross-sectional view in the application the 3rd embodiment.
Specific embodiment
Below with reference to specific embodiment shown in the drawings, the application is described in detail.But these embodiments are not intended to limit the application, structure, method or conversion functionally that those of ordinary skill in the art is made according to these embodiments are all contained in the protection domain of the application.
In each diagram of the application, for the ease of diagram, structure or partial some sizes can be only used for illustrating the basic structure of the theme of the application with respect to other structures or partial enlargement, therefore.
Used herein for example " on ", " top ", D score, the term of the representation space relative position such as " lower section " be in order at and be easy to descriptive purpose to describe the relation that a unit as shown in the drawings or feature are with respect to another unit or feature.The term of relative space position can be intended to including equipment using or work in different azimuth in addition to orientation shown in figure.For example, if by the upset of the equipment of in figure, be described as being located at other units or feature " lower section " or " under " unit will be positioned at other units or feature " top ".Therefore, exemplary term " lower section " can include above and below both orientation.Equipment can otherwise be directed (ratating 90 degrees or other directions), and correspondingly explains used herein and space correlation description language.
When element or layer be referred to as another part or layer " on " with another part or layer " connection " when, its can directly on this another part or layer, be connected to this another part or layer, or there may be intermediary element or layer.On the contrary, when part is referred to as " directly on another part or layer ", " being connected directly between on another part or layer " it is impossible to there is intermediate member or layer.
Shown in ginseng Fig. 2, introduce the substrate 10 of the application first specific embodiment.In the present embodiment, substrate 10 is semiconductor substrate, and its material is the preferable semi-conducting material of insulating properties, such as si, sic etc..
In present embodiment, wire 11 for transmitting the signal of telecommunication is formed with substrate 10, pad 12 for welding external power device is electrically connected with wire, as shown in Figure 2, wire 11 is in substantially lengthwise open, its one end is shaped as square, and pad 12 is located at the inside of wire 11 one end, and its shape is generally rectangular shaped.On substrate 10, the outside in pad 12 is formed with welding resistance groove 13, and meanwhile, this welding resistance groove 13 is located at the outside of wire 11, and the mutually isolated setting of welding resistance groove 23 between pad 22.Wherein, the dashed region of in figure is the welding position of power device.
Further, in present embodiment, the length of welding resistance groove 13 is more than the length of pad 12, and the welding resistance groove 13 using concave downward can fully absorb unnecessary solder in welding process.
It should be understood that, in present embodiment, the width of pad 12 is less than the width of wire 11, in other embodiments, in order to shorten the spacing between wire, pad width can be arranged at conductor width equal, it is arranged such the spacing that can substantially shorten between wire, disclosure satisfy that the demand of photoelectric device miniaturization substrate.
Preferably, welding resistance groove 13 cross sectional shape in present embodiment is corresponding with the end shape of wire 11, and the section of welding resistance groove 13 is in substantially " ∏ " shape.Welding resistance groove 13 is formed by etching technics, and the application is applicable to the substrate that distance between centers of tracks (spacing between circuit on line layer) is less than 50 μm, and the depth of welding resistance groove 13 is deeper, and welding resistance effect is better.Width as welding resistance groove in present embodiment is 1 ~ 25 μm, and the depth of welding resistance groove is not less than 2 μm.
Shown in ginseng Fig. 3, introduce the substrate 20 of the application second specific embodiment.In the present embodiment, substrate 20 is semiconductor substrate, and its material is the preferable semi-conducting material of insulating properties, such as si, sic etc..
In present embodiment, wire 21 for transmitting the signal of telecommunication is formed with substrate 20, pad 22 for welding external power device is electrically connected with wire, as shown in Figure 3, wire 21 is in substantially lengthwise open, its one end is shaped as square, and pad 22 is located at the inside of wire 21 one end, and its shape is generally rectangular shaped.On substrate 20, the outside in pad 22 is formed with welding resistance groove 23, and meanwhile, this welding resistance groove 23 is located at the outside of wire 21, and the mutually isolated setting of welding resistance groove 23 between pad 22.Wherein, the dashed region of in figure is the welding position of power device.
Further, in present embodiment, the length of welding resistance groove 13 is more than the length of pad 12, and the welding resistance groove 13 using concave downward can fully absorb unnecessary solder in welding process.
It should be understood that, in present embodiment, the width of pad 12 is less than the width of wire 11, in other embodiments, in order to shorten the spacing between wire, pad width can be arranged at conductor width equal, it is arranged such the spacing that can substantially shorten between wire, disclosure satisfy that the demand of photoelectric device miniaturization substrate.
Preferably, welding resistance groove 23 cross sectional shape in present embodiment is corresponding with the end shape of wire 21, and the section of welding resistance groove 23 is in substantially " ∩ " shape.Welding resistance groove 23 is formed by etching technics, and the application is applicable to the substrate that distance between centers of tracks (spacing between circuit on line layer) is less than 50 μm, and the depth of welding resistance groove 23 is deeper, and welding resistance effect is better.Width as welding resistance groove in present embodiment is 1 ~ 25 μm, and the depth of welding resistance groove is not less than 2 μm.
It should be noted that, above two embodiment is only two kinds of preferred implementations, in other variant embodiment, wire one end shape can be not limited to square or round, accordingly, the cross sectional shape of welding resistance groove is also not necessarily limited to be in " ∏ " shape or " ∩ " shape, and the section that it can be correspondingly arranged as welding resistance groove is in the straight groove of bending or arcuate groove or a combination thereof or other are regular and irregularly shaped.
Shown in ginseng Fig. 4, introduce the welding structure 100 of the application the 3rd specific embodiment, it includes substrate 10, the wire 11 being located on substrate 10, the pad 12 being located on wire 11 and the power device 14 being electrically connected with by pad 12 with wire 11.
In the application, mentioned " power device 14 " can be for example photoelectricity/Electrical-to-opticaconversion conversion component, and drive the element required for the driving of those photoelectricity/Electrical-to-opticaconversion conversion component and amplifying circuit, and power device 14 can be monolithically integrated on substrate, and it is not necessarily detached device, it is of course also possible to be that multiple detached devices are arranged on substrate.
Substrate 10 in present embodiment illustrates taking the substrate in the first specific embodiment as a example, this substrate 10 is semiconductor substrate, in conjunction with shown in Fig. 2, wire 11 for transmitting the signal of telecommunication is formed with substrate 10, pad 12 for welding external power device is electrically connected with wire, wire 11 is in substantially lengthwise open, its one end is shaped as square, pad 12 is located at the inside of wire 11 one end, and its shape is generally rectangular shaped.On substrate 10, the outside in pad 12 is formed with welding resistance groove 13, and meanwhile, this welding resistance groove 13 is located at the outside of wire 11, and the mutually isolated setting of welding resistance groove 23 between pad 22.Remaining structure of substrate 10 and feature describe in detail in the first specific embodiment, and here is no longer repeated.
In present embodiment, wire 11 passes through photoetching on the substrate 10 and sputtering method makes, and pad 12 is formed on wire 11, and in this welding structure, power device 14 is electrically connected with wire 11 by pad 12.
In present embodiment, welded welding method specifically includes following steps:
There is provided a substrate, this substrate is semiconductor substrate；
Formation welding resistance groove is performed etching by etching technics to substrate；
It is formed with the wire for transmitting the signal of telecommunication on a semiconductor substrate and be electrically connected with the pad for welding external devices with wire, wherein, the outside of described welding resistance groove adjacent pads；
Bonding power device on pad, forms the welding structure that power device is electrically connected with line layer.
Photoetching process in present embodiment and etching technics are the common process in semiconductor technology, make mask pattern in mask plate first, then substrate surface carries out the spraying of photoresist again, and applicable mask plate enters line mask, and the pattern on mask plate is transferred on the photoresist of substrate surface；Dry or wet etch can be adopted after completing photoetching process, substrate form welding resistance groove, and removes unnecessary photoresist.
Power device and substrate are generally electrically connected by solder welding procedures such as golden stannum, because the distance between two pads are less and less, because golden stannum is in the presence of heating and pressure in welding process, easily there is past surrounding to overflow, be so easy to the pad short circuit with surrounding.During welding, overflowing the solder coming can be absorbed present embodiment by welding resistance groove, and is stopped by the substrate (si) around welding resistance groove, thus reaching the effect preventing solder from overflowing.Therefore, the depth of welding resistance groove is deeper, and its welding resistance effect is better, and in order to reach welding resistance effect, the depth of usual welding resistance groove is not less than 2 μm.
Meanwhile, using the semiconductor substrate cost with welding resistance groove relatively low it is not necessary to extra material does welding resistance dam, and the etching precision of welding resistance groove high it is adaptable to the substrate of less than 50 μm distance between centers of tracks.
It should be noted that, in above-mentioned embodiment, pad may be contained within wire termination, certainly, pad can also be set arbitrary region in wire in other embodiments, when pad is arranged at wire zone line, it is being respectively provided with welding resistance groove corresponding to pad both sides, equally can solve the problems, such as the line short that in welding process, solder spilling causes.
The application passes through above-mentioned embodiment, has the advantages that
Outside pad on a semiconductor substrate, welding resistance groove is set, in welding process, welding resistance groove can absorb unnecessary solder, prevents solder from overflowing.
Pottery or the glass substrate of less than 50 μm distance between centers of tracks cannot be processed in prior art, in the application, adopt semiconductor substrate, high-precision welding resistance groove can be made using photoetching and etching technics it is adaptable to the substrate of less than 50 μm distance between centers of tracks.
Meanwhile, the substrate of the application and welding structure low production cost be it is not necessary to extra material does welding resistance dam, and welding method is simple, improves production efficiency.
It should be understood that, although this specification is been described by according to embodiment, but not each embodiment only comprises an independent technical scheme, this narrating mode of description is only for clarity, those skilled in the art should be using description as an entirety, technical scheme in each embodiment can also through appropriately combined, formed it will be appreciated by those skilled in the art that other embodiment.
The a series of detailed description of those listed above is only for illustrating of the feasibility embodiment of the application; they are simultaneously not used to limit the protection domain of the application, and all equivalent implementations made without departing from the application skill spirit or change should be included within the protection domain of the application.
Claims (10)
1. a kind of substrate, it is characterized in that, described substrate is semiconductor substrate, described semiconductor substrate is formed with the wire for transmitting the signal of telecommunication and is electrically connected with the pad for welding external devices with described wire, on described semiconductor substrate, the outside in adjacent pads is formed with welding resistance groove.
2. substrate according to claim 1 is it is characterised in that described semiconductor substrate is si substrate or sic substrate.
3. the mutually isolated setting of welding resistance groove it is characterised in that some pads and welding resistance groove are included on described substrate, outside each pad for the substrate according to claim 1.
4. substrate according to claim 1 is it is characterised in that the length of described pad is less than the length of welding resistance groove outside described pad.
5. it is characterised in that the width of described pad is equal to the width of wire, described welding resistance groove is arranged substrate according to claim 1 against pad.
6. according to claim 1 or 5 substrate it is characterised in that described welding resistance groove is formed by etching technics, the width of described welding resistance groove is 1 ~ 25 μm, the depth of welding resistance groove is more than or equal to 2 μm.
7. it is characterised in that described welding resistance groove is located at the end of wire, the section of described welding resistance groove is in straight groove or arcuate groove or a combination thereof of bending to substrate according to claim 1.
8. a kind of welding structure, it is characterized in that, described welding structure includes substrate and the power device being welded to connect with described substrate, described substrate is semiconductor substrate, wire for transmitting the signal of telecommunication is formed with described semiconductor substrate and is electrically connected with the pad for welding external devices with described wire, on described semiconductor substrate, the outside in adjacent pads is formed with welding resistance groove.
9. a kind of welding method is it is characterised in that described welding method includes:
There is provided a substrate, described substrate is semiconductor substrate；
Formation welding resistance groove is performed etching by etching technics to substrate；
It is formed with the wire for transmitting the signal of telecommunication on a semiconductor substrate and be electrically connected with the pad for welding external devices with wire, wherein, the outside of described welding resistance groove adjacent pads；
Bonding power device on pad, forms the welding structure that power device is electrically connected with line layer.
10. it is characterised in that the width of described welding resistance groove is 1 ~ 25 μm, the depth of welding resistance groove is more than or equal to 2 μm to welding method according to claim 9.
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| CN201510411655.2A CN106356353A (en) | 2015-07-14 | 2015-07-14 | Substrate and substrate-applying welding structure and welding method |
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| CN201510411655.2A CN106356353A (en) | 2015-07-14 | 2015-07-14 | Substrate and substrate-applying welding structure and welding method |
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Cited By (6)
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| CN107134606A (en) * | 2017-06-29 | 2017-09-05 | 成都玖信科技有限公司 | The glass insulator level Hermetic Package structure and welding method of microwave device |
| CN109659291A (en) * | 2018-12-24 | 2019-04-19 | 烟台艾睿光电科技有限公司 | A kind of welding ring anti-overflow structure |
| CN113453423A (en) * | 2021-07-14 | 2021-09-28 | 广东合通建业科技股份有限公司 | Resistance welding windowing structure of miniLED circuit board bonding pad |
| CN110349847B (en) * | 2018-04-08 | 2022-11-04 | 上海新微技术研发中心有限公司 | Method for bonding through bonding material and bonding structure |
| WO2023035323A1 (en) * | 2021-09-08 | 2023-03-16 | Tcl华星光电技术有限公司 | Light-emitting substrate and preparation method therefor |
| CN117156939A (en) * | 2023-10-26 | 2023-12-01 | 四川科尔威光电科技有限公司 | Ceramic integrated circuit with solder resist function and preparation method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107134606A (en) * | 2017-06-29 | 2017-09-05 | 成都玖信科技有限公司 | The glass insulator level Hermetic Package structure and welding method of microwave device |
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| CN117156939A (en) * | 2023-10-26 | 2023-12-01 | 四川科尔威光电科技有限公司 | Ceramic integrated circuit with solder resist function and preparation method thereof |
| CN117156939B (en) * | 2023-10-26 | 2024-02-09 | 四川科尔威光电科技有限公司 | Ceramic integrated circuit with solder resist function and preparation method thereof |
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