CN106356310A - Method for calibrating low-contrast calibration area of wafer - Google Patents
Method for calibrating low-contrast calibration area of wafer Download PDFInfo
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- CN106356310A CN106356310A CN201510410096.3A CN201510410096A CN106356310A CN 106356310 A CN106356310 A CN 106356310A CN 201510410096 A CN201510410096 A CN 201510410096A CN 106356310 A CN106356310 A CN 106356310A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Automation & Control Theory (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a method for calibrating a low-contrast calibration area of a wafer, wherein the method comprises the steps of C, determining whether there is a light source process corresponding to the wafer and not used, wherein the light source process is used for determining optimal wavelength of a calibration light source for the low-contrast calibration area of the wafer during calibrating; c1, if there is the light source process, acquiring the optimal wavelength from the light source process; c2, if there is no light source process, measuring to determine the optimal wavelength; D, setting wavelength of the calibration light source as the optimal wavelength; E, calibrating the calibration area; wherein the calibration area has recognition facilitating contrast when exposed to the calibration light source with the optimal wavelength. The invention also discloses an apparatus for calibrating a low-contrast calibration area of a wafer, and a method for setting a light source process.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more specifically, be related to a kind of to wafer
In low contrast calibration region implement determine calibration method and its device, a kind of and setting light
The method of source processing procedure.
Background technology
In recent years, the fast development with the electrical type consumer goods and extensive application, as integrated
The demand consumption of the wafer of circuit product base stock also increasingly increases.The processing and manufacturing of wafer
It is an important process process of semiconductor manufacturing industry with detection.Precision due to integrated circuit
Property it is therefore desirable to wafer being carried out with the processing of precision and accurate detecting.
It is necessary to first to wafer in the wafer processing and manufacturing of semiconductor foundry or detection process
Make accurate position to determine, then wafer could be finished or accurately test.So
And certainly will need that repeats wafer is imported everywhere in processing or checking process in different manufacturing
On reason board, the importing wafer on processing board of repetition can cause wafer every time on board
Placement location exist skew, and then have influence on processing and manufacturing or detection accuracy.Therefore,
Accurately determine that wafer position extremely closes weight for the processing and manufacturing of whole wafer or detection
Will.
Content of the invention
Disclose a kind of calibration of the low contrast in wafer area according to an aspect of the present invention
Domain implements to determine calibration method, wherein, comprises the steps: that c. is confirmed whether to have and described crystalline substance
Circle is corresponding, and the light source processing procedure being not used by, and described light source processing procedure is used for scaled
In journey, the calibration region for low contrast in wafer determines the most optimum wavelengths of scaling light source；c1.
When having described light source processing procedure, from described light source processing procedure, obtain described most optimum wavelengths；c2.
When there is no described light source processing procedure, described most optimum wavelengths are determined by measurement；D. described fixed
The wavelength of mark light source is set as described most optimum wavelengths；E. calibration is implemented to described calibration region；Its
In, described calibration region has just under having the irradiation of scaling light source of described most optimum wavelengths
Contrast in identification.
Disclose a kind of method setting light source processing procedure, institute according to another aspect of the present invention
State light source processing procedure for being that there is the wafer determination that low contrast calibrates region in calibration process
The most optimum wavelengths of scaling light source, wherein, comprise the steps: that i. imports the wafer of low contrast；
Ii. search out a calibration region on described wafer；Iii. scan described calibration area with ellipsometer
Contrast under the irradiation of the ellipsometer light source of different wave length for the domain；Iv. when described contrast is full
During sufficient predetermined condition, record the wavelength value that described ellipsometer light source is used；V. described ripple
Long value is set as the most optimum wavelengths of the scaling light source of wafer described in calibration process, and preserves
In described light source processing procedure.
Disclose a kind of calibration of the low contrast in wafer according to another aspect of the present invention
The device of calibration is implemented it is characterised in that including as lower unit in region: processing procedure determining unit,
It is used for being confirmed whether to have, and the light source processing procedure that be not used by corresponding with described wafer,
Described light source processing procedure is used in calibration process being the calibration region determination of low contrast in wafer
The most optimum wavelengths of scaling light source；Wavelength determining unit, it is used for determining most optimum wavelengths, and it is also
Including: wavelength acquiring unit, it is used for when having described light source processing procedure, from described light source
Described most optimum wavelengths are obtained in processing procedure；Wavelength determination unit, it is used for working as does not have described light source
During processing procedure, described most optimum wavelengths are determined by measurement；Light source setup unit, it is used for fixed
The wavelength of mark light source is set as described most optimum wavelengths；Calibration implementation unit, it is used for described
Calibration is implemented in calibration region；Wherein, described calibration region has determining of described most optimum wavelengths
Under the irradiation of mark light source, there is the contrast being easy to identify.
Scheme disclosed in this invention one of at least has the advantage that: solves prior art
In low to contrast in wafer calibration region cannot implement the problem calibrated, improve wafer
The efficiency of calibration is it is achieved that auto-scaling under the conditions of multiple wafer.
Brief description
By being hereafter described in detail to the embodiment combining shown by accompanying drawing, the present invention's
Above-mentioned and other features will be apparent from, same or analogous label table in accompanying drawing of the present invention
Show same or analogous step；
Fig. 1 shows according to a kind of determining to the low contrast in wafer disclosed in this invention
The method flow diagram of calibration is implemented in mark region；
Fig. 2 shows according to a kind of determining to the low contrast in wafer disclosed in this invention
The apparatus module figure of calibration is implemented in mark region；And
Fig. 3 shows according to a kind of method flow setting light source processing procedure disclosed in this invention
Figure.
Specific embodiment
In the specific descriptions of following preferred embodiment, will be a part of with reference to constituting the present invention
Appended accompanying drawing.Appended accompanying drawing has been illustrated by way of example and has been capable of the present invention
Specific embodiment.The embodiment of example is not intended as all realities according to the present invention for the limit
Apply example.Although it should be noted that being described relevant in the present invention herein with particular order
The step of method, but this does not require that or implies and must execute according to this particular order
These operations, or having to carry out all shown operation just enables desired result, phase
Instead, step described herein can change execution sequence.Additionally or alternatively, may be used
To omit some steps, multiple steps are merged into a step execution, and/or one is walked
Suddenly it is decomposed into execution of multiple steps.
Generally, the process determining wafer position is referred to as calibration it may be assumed that by wafer
Pattern image is compared with the plate pattern prestoring, thus identifying the physical location of wafer.
Wherein, area is referred to as calibrated in region wafer with pattern image.In semiconductor crystal wafer manufacture
During, it is usually used traditional image identification system that wafer is calibrated.Research people
Member experiment find, in some wafer fabrication processes, when wafer have thicker or opaque
During film, the image in calibration region generally shows low contrast.The figure of this low contrast
As being a challenge to conventional images technology of identification.Calibration region due to low contrast wafer
Provide little graphic feature, image identification system cannot find enough targeted messages.
Therefore traditional image recognition does not have enough robustness to identify the crystalline substance of this kind of low contrast
Circle.For this, urgent need is a kind of can implement calibration to the calibration region of the low contrast in wafer
Method.
In order to solve this technical problem, Fig. 1 shows right according to one kind disclosed in this invention
The method flow diagram of calibration is implemented in the calibration region of the low contrast in wafer；Fig. 2 shows
Calibration is implemented according to a kind of calibration region to the low contrast in wafer disclosed in this invention
Apparatus module figure.Introduce one kind disclosed in this invention below with reference to Fig. 1 and Fig. 2 right
In wafer, the calibration region of low contrast implements to determine calibration method and its device.
Generally, the calibration of wafer is to implement in processing board, the invention discloses a kind of
The device of calibration is implemented in the calibration region to the low contrast in wafer in processing board
200, this device 200 includes: wafer import unit 210, it is used for importing wafer to be measured；
Processing procedure determining unit 220, whether it is corresponding with wafer to be measured for having in confirmation process board
Light source processing procedure；Wavelength determining unit 230, it is used for determining most optimum wavelengths；Scaling light source sets
Order unit 240, it is used for the wavelength of scaling light source to be set as most optimum wavelengths；Calibration is implemented single
Unit 250, it is used for implementing calibration to the calibration region in wafer；Calibration judging unit 260,
It is used for judging whether calibration is successful；Mode judging unit 270, it is used for judging that determination is described
The mode of most optimum wavelengths；Processing procedure signal generating unit 280, it is used for generating new light source processing procedure；Report
Alert unit 290, it is used for reporting an error or reports to the police.Wherein, described wavelength determining unit 230 is also wrapped
Include: wavelength acquiring unit 231 and wavelength determination unit 232, wavelength acquiring unit 231 is used for
When processing the light source processing procedure needed for having in board, obtain optimum ripple from this light source processing procedure
Long；Wavelength determination unit 232 is used for when processing the light source processing procedure needed for not having in board,
Most optimum wavelengths are determined by measurement.Wherein, this wavelength determination unit 232 also includes: ellipse inclined
Instrument unit, it is used for scanning the irradiation of the ellipsometer light source in different wave length for the described calibration region
Under contrast, and wavelength recording unit, it is used for meeting predetermined bar when described contrast
The wavelength value that the light source of this ellipsometer is used is recorded during part.
Wafer import unit 210 is connected with processing procedure determining unit 220, processing procedure determining unit
220 are connected with wavelength determining unit 230, wavelength determining unit 230 respectively with scaling light source
Setup unit 240 is connected with mode judging unit 270, scaling light source setup unit 240
It is connected with calibration implementation unit 250, calibrate implementation unit 250 and calibration judging unit 260
It is connected, calibration judging unit 260 is connected with mode judging unit 270, and mode judges
Unit 270 is connected with processing procedure signal generating unit 280 and alarm unit 290 respectively.
By said apparatus 200, the tool that calibration is implemented in region is calibrated to the low contrast in wafer
Body method is as described below:
In a step 101, wafer import unit 210 imports wafer to be measured, and by moving
Described wafer to be measured makes to process this crystalline substance to be measured of alignment lenses of the image recognition apparatus on board
Calibration region on circle.
In a step 102, the calibration region of wafer to be measured is carried out with image recognition fixed to implement
Mark, as the mode implemented in prior art, here is omitted for this step.
In step 103, the calibration results in 102 are judged, if calibrated successfully
Then terminate the calibration process to this wafer to be measured；If calibrating unsuccessfully, implementation steps 104,
Thus further being calibrated to the wafer to be measured of unsuccessful calibration.
It is to be noted that step 102 and step 103 are optional steps it is also possible to implement
Direct implementation steps 104 after step 101.For example, the calibration area in wafer clearly to be measured
When domain has that contrast is low or image recognition apparatus are difficult to identified, step 102 can be skipped
With 103, direct implementation steps 104.
At step 104, processing procedure determining unit 220 is confirmed whether have and this wafer phase to be measured
Corresponding light source processing procedure generates it may be assumed that being confirmed whether to have for the calibration region in this wafer
Light source processing procedure.
Generally, can calibrated in region so that image is known using white light in calibration process
Other equipment come to identify calibration region in image, and due to some wafers have thicker or impermeable
Bright film, thus causing the contrast calibrating region relatively low, needs for this for these wafers
Set the scaling light source of particular color, so that these have the calibration region compared with low contrast
Higher contrast is presented under the irradiation of the scaling light source of this particular color.Light source processing procedure
Exactly it is used for being set in the processing procedure of the scaling light source used in calibration process, this processing procedure passes through
The setting to realize the color to scaling light source for the wavelength value of change scaling light source.Wherein, should
In light source processing procedure, the wavelength value of scaling light source is referred to as most optimum wavelengths.Have compared with low contrast
Calibration region presents under having the irradiation of scaling light source of described most optimum wavelengths to be easy to identify
Contrast.
When processing procedure determining unit 220 confirm process board do not have relative with this wafer to be measured
During the light source processing procedure answered, then implementation steps 105 to determine the optimum of scaling light source by measurement
Wavelength.When processing procedure determining unit 220 confirm process board have relative with this wafer to be measured
During the light source processing procedure answered, then implementation steps 106 obtain described optimum ripple from this light source processing procedure
Long.
In step 105, wavelength determination unit 232 is implemented to the calibration region of wafer to be measured
Measurement is to obtain the most optimum wavelengths of scaling light source, and implementation steps 107.Described wavelength measures single
Unit 232 includes ellipsometer and wavelength recording unit.
Specific measuring method is: the output light source of ellipsometer is set as thering is some ripple
The light of long value, and this light irradiation on the calibration region of wafer to be measured, by ellipsometer
Scanning end scans contrast value under current light source irradiation for the calibration region；Then ellipse inclined
The wavelength of instrument light source is set as next wavelength value, and it is fixed to be scanned by the scanning end of ellipsometer
Contrast value under the irradiation of this light source for the mark region；Repeat above-mentioned measurement so that ellipsometer is swept
Describe contrast value under the irradiation of the ellipsometer light source of different wave length for this calibration region, when
When described contrast meets predetermined condition, when meeting predetermined condition under wavelength recording unit records
The wavelength value that ellipsometer light source is used, this wavelength value is exactly determining of this wafer to be recorded
The most optimum wavelengths of mark light source.
According to a preferred embodiment disclosed in this invention, described predetermined condition is set
For: there is maximum contrast angle value.That is, scan described calibration region in all ripples with ellipsometer
Long ellipsometer light source irradiate lower contrast, and find out and calibrate region there is maximum contrast
The wavelength value that during angle value, ellipsometer light source is used.
According to another preferred embodiment disclosed in this invention, described predetermined condition is set
It is set to: contrast is higher than a threshold value.That is, scan described calibration region not with ellipsometer
Contrast under the irradiation of the ellipsometer light source of co-wavelength, when contrast is higher than a certain threshold value,
Then directly record the wavelength value that current ellipsometer light source is used, and do not continue to measurement at it
Contrast under the light source irradiation of his wavelength.By given threshold, it is to avoid need all
The light source of wavelength irradiates the lower contrast value scanning described calibration region, saves time of measuring,
Improve operating efficiency.
In step 106, wavelength acquiring unit 231 obtains calibration from described light source processing procedure
The most optimum wavelengths of light source, and implementation steps 107.
In step 107, light source setup unit 240 is according to from wavelength determining unit 230
Wavelength determination unit 232 or wavelength acquiring unit 231 at determined by most optimum wavelengths,
The wavelength of scaling light source is set as described most optimum wavelengths.In a preferred embodiment, lead to
Cross the filter disc that insertion has same color with most optimum wavelengths before original white scaling light source to come
Realize changing the wavelength of this scaling light source.
In step 108, calibration implementation unit 250 uses the scaling light source of new settings to fixed
Calibration is implemented in mark region.Described calibration implementation unit 250 can be a figure being used for calibration
As identification equipment.
In step 109, calibration judging unit 260 enters to the calibration results in step 108
Row judges, to confirm whether this calibration is successful, if calibrating unsuccessful, implementation steps 110,
If calibrating successfully, implementation steps 111.
In step 110, mode judging unit 270 judges the determination mode of this most optimum wavelengths
Whether obtained by measurement, if this most optimum wavelengths is obtained by measurement, then lead to
Cross alarm unit 290 to implement to report an error or report to the police, obtain this optimum ripple if not by measurement
Long, then it is back to be confirmed whether the light source processing procedure being also not used by step 104,
If the light source processing procedure being also not used by exists, execution step 106 uses and is not used by
Light source processing procedure in most optimum wavelengths；Exist without the light source processing procedure being not used by,
Then execution step 107 is to obtain required most optimum wavelengths by measurement.
In a preferred embodiment, described wavelength determining unit 230 in step 105 or
Can be directly to inform to mode judging unit 270 after having determined most optimum wavelengths in step 106
The determination mode of this most optimum wavelengths.
In step 111, mode judging unit 270 judges the determination mode of this most optimum wavelengths
Whether obtained by measurement, if this most optimum wavelengths is obtained by measurement, then real
Apply step 112, obtain this most optimum wavelengths if not by measurement, then terminate this calibration.
In step 112, the most optimum wavelengths based on use used for the processing procedure signal generating unit 280 are given birth to
Become the light source processing procedure corresponding to this wafer to be measured and preserve.
The present invention also discloses a kind of setting light source processing procedure based on the design in above-described embodiment
Method, equally, described light source processing procedure is used in calibration process being to have low contrast calibration
The wafer in region determines the most optimum wavelengths of scaling light source, and Fig. 3 shows public according to present invention institute
A kind of wafer calibrating region for having low contrast opened sets the method flow of light source processing procedure
Figure.
In step 301, the wafer in the calibration region with low contrast is directed into process
In board.
In step 302, make to process the image on board by mobile described wafer to be measured
Calibration region on this wafer to be measured of the alignment lenses of identification equipment.
In step 303, scan the ellipsometer in different wave length for this calibration region with ellipsometer
Contrast under the irradiation of light source.Specifically, the output light source of ellipsometer is set as having
The light of some wavelength value, and this light irradiation on the calibration region of wafer to be measured, pass through
The scanning end of ellipsometer scans contrast value under current light source irradiation for the calibration region.
In step 304, determine whether described contrast value meets predetermined condition, work as satisfaction
During predetermined condition, then execution step 305, under being otherwise then set as the wavelength of ellipsometer light source
One wavelength value again execution step 303.When described contrast meets predetermined condition, then
Execution step 305.
According to a preferred embodiment disclosed in this invention, described predetermined condition is set
For: there is maximum contrast angle value.That is, scan described calibration region in all ripples with ellipsometer
Long ellipsometer light source irradiate lower contrast, and find out and calibrate region there is maximum contrast
The wavelength value that when spending, ellipsometer light source is used.
According to another preferred embodiment disclosed in this invention, described predetermined condition is set
It is set to: contrast is higher than a threshold value.That is, scan described calibration region not with ellipsometer
Contrast under the irradiation of the ellipsometer light source of co-wavelength, when contrast is higher than a certain threshold value,
Then directly record the wavelength value that current ellipsometer light source is used, and do not continue to measurement at it
Contrast under the light source of his wavelength.Need not be scanned in all ripples by the method for given threshold
Contrast value under long light source irradiation, saves time of measuring, improves operating efficiency.
In step 305, record the ripple that when meeting predetermined condition, ellipsometer light source is used
Long value, this wavelength value is exactly the most optimum wavelengths of the required scaling light source of this wafer.
Within step 306, generate corresponding light source processing procedure based on the most optimum wavelengths being obtained.
It is obvious to a person skilled in the art that the invention is not restricted to above-mentioned one exemplary embodiment
Details, and without departing from the spirit or essential characteristics of the present invention, can be with it
His concrete form realizes the present invention.Therefore, from the point of view of anyway, embodiment all should be regarded as
It is exemplary, and be nonrestrictive.Additionally, it will be evident that " inclusion " one word is not arranged
Except other elements and step, and wording " one " is not excluded for plural number.In device claim
The multiple element of statement can also be realized by an element.The first, the second grade word is used for table
Show title, and be not offered as any specific order.
Claims (11)
1. a kind of region that low contrast in wafer is calibrated implements to determine calibration method, wherein, bag
Include following steps:
C. it is confirmed whether to have corresponding with described wafer, and the light source processing procedure being not used by,
Described light source processing procedure is used in calibration process being the calibration region determination of low contrast in wafer
The most optimum wavelengths of scaling light source；
C1. when having described light source processing procedure, described in acquisition from described light source processing procedure
Excellent wavelength；
C2., when there is no described light source processing procedure, described most optimum wavelengths are determined by measurement；
D. the wavelength of described scaling light source is set as described most optimum wavelengths；
E. calibration is implemented to described calibration region；
Wherein, described calibration region is under having the irradiation of scaling light source of described most optimum wavelengths
There is the contrast being easy to identify.
2. method according to claim 1, wherein, step c2 specifically includes:
I. the irradiation of the ellipsometer light source in different wave length for the described calibration region is scanned with ellipsometer
Under contrast；
Ii. when described contrast meets predetermined condition, record the wavelength of described ellipsometer light source
Value；
Iii. the scaling light source described wavelength value being defined as wafer described in calibration process is
Excellent wavelength.
3. method according to claim 2, wherein, in described step ii, described pre-
Fixed condition is: described contrast is maximum, or described contrast is higher than a threshold value.
4. method according to claim 3, wherein, further comprises the steps of:
F. it is confirmed whether that successful implementation is calibrated；
If f1. successful implementation calibration, judge to determine the mode of described most optimum wavelengths；
When by measurement to determine described most optimum wavelengths, then generate new light source
Processing procedure；
When determining described most optimum wavelengths from described light source processing procedure, then terminate；
If f2. unsuccessful implement calibration, the mode judging to determine described most optimum wavelengths；
When by measurement to determine described most optimum wavelengths, then report an error；
When determining described most optimum wavelengths from light source processing procedure, then return to step c.
5. method according to claim 4, wherein, in step d, by setting
Optical filter, is set as described most optimum wavelengths the wavelength of described scaling light source.
6. method according to claim 5, wherein, also included following before step c
Step:
A. import wafer to be measured；
B. calibration is implemented to described calibration region, if successful implementation calibration, terminate, if
Unsuccessful enforcement calibration then execution step c.
7. a kind of method setting light source processing procedure, described light source processing procedure is for being in calibration process
The wafer with low contrast calibration region determines the most optimum wavelengths of scaling light source, wherein, bag
Include following steps:
I. import the wafer of low contrast；
Ii. search out a calibration region on described wafer；
Iii. the irradiation of the ellipsometer light source in different wave length for the described calibration region is scanned with ellipsometer
Under contrast；
Iv., when described contrast meets predetermined condition, record described ellipsometer light source and used
Wavelength value；
V. the scaling light source described wavelength value being set as wafer described in calibration process is
Excellent wavelength, and be saved in described light source processing procedure.
8. method according to claim 7, wherein, in described step iv, described
Predetermined condition is: described contrast is higher than a threshold value, or described contrast is maximum.
9. a kind of device that low contrast in wafer is calibrated with region enforcement calibration, its feature exists
In including as lower unit:
Processing procedure determining unit, it is used for being confirmed whether to have corresponding with described wafer, and not
The light source processing procedure being used, described light source processing procedure is used in calibration process being low right in wafer
Determine the most optimum wavelengths of scaling light source than the calibration region of degree；
Wavelength determining unit, it is used for determining most optimum wavelengths, it also includes:
Wavelength acquiring unit, it is used for when having described light source processing procedure, from described light
Described most optimum wavelengths are obtained in the processing procedure of source；
Wavelength determination unit, it is used for when not having described light source processing procedure, by measurement
Determine described most optimum wavelengths；
Light source setup unit, it is used for the wavelength of scaling light source to be set as described most optimum wavelengths；
Calibration implementation unit, it is used for implementing calibration to described calibration region；
Wherein, described calibration region is under having the irradiation of scaling light source of described most optimum wavelengths
There is the contrast being easy to identify.
10. device according to claim 9 is it is characterised in that described wavelength measures list
Unit also includes；
Ellipsometer unit, it is used for scanning the ellipsometer light in different wave length for the described calibration region
Contrast under the irradiation in source；
Wavelength recording unit, it is used for, when described contrast meets predetermined condition, recording institute
State the wavelength value that ellipsometer light source is used.
11. devices according to claim 10 are it is characterised in that also include:
Calibration identifying unit, it is used for judging whether calibration is successful；
Mode judging unit, it is used for the mode judging to determine described most optimum wavelengths；
Processing procedure signal generating unit, it is used for generating new light source processing procedure；
Alarm unit, it reports an error for enforcement；
Scaling light source setup unit, it is used for by setting optical filter, described scaling light source
Wavelength be set as described most optimum wavelengths.
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| CN201510410096.3A CN106356310B (en) | 2015-07-14 | 2015-07-14 | Implement to determine calibration method in low contrast calibration region in a kind of pair of wafer |
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| CN102184878A (en) * | 2011-04-01 | 2011-09-14 | 无锡睿当科技有限公司 | System and method for feeding back image quality of template for wafer alignment |
| CN102648405A (en) * | 2009-11-20 | 2012-08-22 | 独立行政法人产业技术综合研究所 | Method of examining defects, wafer subjected to defect examination or semiconductor element manufactured using the wafer, quality control method for wafer or semiconductor element, and defect examining device |
| US20130337370A1 (en) * | 2012-06-13 | 2013-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask and method for forming the same |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5172189A (en) * | 1990-04-06 | 1992-12-15 | Canon Kabushiki Kaisha | Exposure apparatus |
| CN102648405A (en) * | 2009-11-20 | 2012-08-22 | 独立行政法人产业技术综合研究所 | Method of examining defects, wafer subjected to defect examination or semiconductor element manufactured using the wafer, quality control method for wafer or semiconductor element, and defect examining device |
| CN102184878A (en) * | 2011-04-01 | 2011-09-14 | 无锡睿当科技有限公司 | System and method for feeding back image quality of template for wafer alignment |
| US20130337370A1 (en) * | 2012-06-13 | 2013-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask and method for forming the same |
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