CN106356307B - Hatch frame and its manufacturing method and internal connection-wire structure - Google Patents
Hatch frame and its manufacturing method and internal connection-wire structure Download PDFInfo
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- CN106356307B CN106356307B CN201510413782.6A CN201510413782A CN106356307B CN 106356307 B CN106356307 B CN 106356307B CN 201510413782 A CN201510413782 A CN 201510413782A CN 106356307 B CN106356307 B CN 106356307B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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Abstract
The present invention provides a kind of manufacturing methods of hatch frame, include the following steps: that multilayered structure is formed on the substrate, multilayered structure includes the conductor layer being alternately stacked and the first dielectric layer, and the height of the conductor layer in the firstth area is lower than the height for the conductor layer being located in the secondth area；Form the second dielectric layer of covering multilayered structure；In forming patterned mask layer on the second dielectric layer；The first filling floor is formed in the secondth area, the first filling layer covers the second dielectric layer exposed by patterned mask layer；Using the first filling layer and patterned mask layer as mask, multiple first openings of the conductor layer exposed in the firstth area are formed；Remove the first filling layer；Form the second filling layer in the first opening of filling；Using the second filling layer and patterned mask layer as mask, multiple second openings of the conductor layer exposed in the secondth area are formed.The present invention also provides a kind of hatch frame and internal connection-wire structures.
Description
Technical field
The invention relates to a kind of hatch frame and its manufacturing method and internal connection-wire structures, and in particular to one
Plant the hatch frame that can be used for 3 D semiconductor element and its manufacturing method and internal connection-wire structure.
Background technique
It is integrated with semiconductor element, in order to reach high density and dynamical target, in limited unit plane
In product, luxuriant toward three-dimensional space development is trend.In common 3 D semiconductor element such as nonvolatile memory three-dimensional with
Non- gate flash memory (3D-NAND flash memory).
By taking the sandwich type element of three-dimensional NAND gate type flash memory as an example, stair-stepping multilayer bonding pad structure can be such that contact hole connects respectively
The different film layers being connected in sandwich type element.Due to most shallowly having very greatly with most deep contact hole at depth-to-width ratio (aspect ratio)
Difference, therefore formed contact hole etching technics in need using etch stop layer.
When the number of plies of stair-stepping multilayer bonding pad structure is less, contact hole etching technics can safely stop at etching eventually
Only on layer.However, the thickness of etch stop layer is also required to significantly increase when the number of plies of stair-stepping multilayer bonding pad structure increases
Add, so that being used to form the etching technics of contact hole can safely stop on etch stop layer.
In this way, which the space of contact hole can be compressed and be made since the thickness of etch stop layer significantly increases
It obtains process margin (process window) to reduce, and then causes contact hole that can not effectively connect with connection pad.
Summary of the invention
The present invention provides a kind of hatch frame and its manufacturing method, can effectively promote the etching work for being used to form opening
The process margin of skill.
The present invention provides a kind of internal connection-wire structure, can effectively be attached with corresponding conductor layer.
The present invention proposes a kind of manufacturing method of hatch frame, including the following steps: multilayered structure is formed on the substrate
(multi-layer structure), multilayered structure include the first dielectric layer of the multi-layer conductive layer being alternately stacked and multilayer, position
The height of conductor layer in the firstth area is lower than the height for the conductor layer being located in the secondth area；Form the second of covering multilayered structure
Dielectric layer；In forming patterned mask layer on the second dielectric layer；The first filling floor, the first filling layer covering are formed in the secondth area
The second dielectric layer exposed by patterned mask layer；Using the first filling layer and patterned mask layer as mask, exposure is formed
Multiple first openings of conductor layer in firstth area out；Remove the first filling layer；Form the second filling in the first opening of filling
Layer；Using the second filling layer and patterned mask layer as mask, multiple second openings of the conductor layer exposed in the secondth area are formed.
According to described in one embodiment of the invention, in the manufacturing method of above-mentioned hatch frame, multilayered structure is, for example,
Hierarchic structure.
It further include forming the in the manufacturing method of above-mentioned hatch frame according to described in one embodiment of the invention
Before two dielectric layers, etch stop layer is conformally formed on multilayered structure.
It further include forming the in the manufacturing method of above-mentioned hatch frame according to described in one embodiment of the invention
Before one filling layer, using patterned mask layer as mask, the second dielectric layer of part is removed, and is formed in the second dielectric layer multiple
Mask open (mask openings).
According to described in one embodiment of the invention, in the manufacturing method of above-mentioned hatch frame, first inserts the shape of layer
Include the following steps: the first filling material layer to form overlay pattern mask layer and the second dielectric layer at method；In the secondth area
In first filling material layer on formed patterning photoresist layer；To pattern photoresist layer as mask, remove in the firstth area
First filling material layer.
According to described in one embodiment of the invention, in the manufacturing method of above-mentioned hatch frame, first inserts material layer
Material be, for example, organic dielectric materials.
According to described in one embodiment of the invention, in the manufacturing method of above-mentioned hatch frame, first inserts material layer
Forming method be, for example, method of spin coating.
According to described in one embodiment of the invention, in the manufacturing method of above-mentioned hatch frame, the formation of the first opening
Method includes the following steps: to remove in the firstth area using the first filling layer and patterned mask layer as mask by patterned mask layer
The second dielectric layer and the first dielectric layer exposed.
According to described in one embodiment of the invention, in the manufacturing method of above-mentioned hatch frame, second inserts the shape of layer
Include the following steps: the second filling to be formed in overlay pattern mask layer and the second dielectric layer and the first opening of filling at method
Material layer；Technique is etched back to the second filling material layer, to remove the second filling material layer in the secondth area, and is exposed
The second dielectric layer in secondth area.
According to described in one embodiment of the invention, in the manufacturing method of above-mentioned hatch frame, second inserts material layer
Material be, for example, organic dielectric materials or conductor material.
According to described in one embodiment of the invention, in the manufacturing method of above-mentioned hatch frame, second inserts material layer
Forming method be, for example, method of spin coating, physical vaporous deposition or chemical vapour deposition technique.
According to described in one embodiment of the invention, in the manufacturing method of above-mentioned hatch frame, second inserts the upper of layer
Surface is, for example, the top for being lower than the first opening.
According to described in one embodiment of the invention, in the manufacturing method of above-mentioned hatch frame, the formation of the second opening
Method includes the following steps: to remove in the secondth area using the second filling layer and patterned mask layer as mask by patterned mask layer
The second dielectric layer and the first dielectric layer exposed.
The present invention proposes a kind of hatch frame, including substrate, multilayered structure and the second dielectric layer.Multilayered structure is set to base
On bottom.Multilayered structure includes the first dielectric layer of the multi-layer conductive layer being alternately stacked and multilayer.Conductor layer in the firstth area
Height be lower than be located at the secondth area in conductor layer height.Second dielectric layer covers multilayered structure, and has in the second dielectric layer
There are the first opening and the second opening.First opening exposes one in the conductor layer in the firstth area, and the second opening exposes
One in conductor layer in secondth area.First opening is different from the profile of the second opening, and the upper width of the first opening is big
In lower width.
According to described in one embodiment of the invention, in above-mentioned hatch frame, multilayered structure is, for example, hierarchic structure.
It further include etch stop layer in above-mentioned hatch frame according to described in one embodiment of the invention.Etching terminates
Layer is conformally arranged on multilayered structure.
The present invention proposes a kind of internal connection-wire structure, including substrate, multilayered structure, the second dielectric layer, the second conductor layer of multilayer
With multilayer third conductor layer.Multilayered structure is set in substrate.Multilayered structure include the first conductor layer of multilayer for being alternately stacked with
And the first dielectric layer of multilayer.The height of the first conductor layer in the firstth area is lower than the first conductor layer being located in the secondth area
Highly.Second dielectric layer covers multilayered structure.Second conductor layer and third conductor layer are set in second dielectric layer.Second leads
Body floor is connected to the first conductor layer in the firstth area, and third conductor layer is connected to the first conductor layer in the secondth area.Second leads
Body layer is different from the profile of third conductor layer, and the upper width of the second conductor layer is greater than lower width.
According to described in one embodiment of the invention, in above-mentioned internal connection-wire structure, multilayered structure is, for example, hierarchic structure.
It further include etch stop layer in above-mentioned internal connection-wire structure according to described in one embodiment of the invention.Etching is eventually
Only layer is conformally arranged on multilayered structure.
According to described in one embodiment of the invention, in above-mentioned internal connection-wire structure, each second conductor layer includes lower guide
Body layer and upper conductor layer.Lower conductor layer is connected to corresponding first conductor layer.Upper conductor layer is set to bottom conductor
On layer.
Based on above-mentioned, in hatch frame and its manufacturing method proposed by the invention, since the first filling layer can be passed through
Subregion etching is carried out with the second filling layer, so when the number of plies of multilayered structure increases, without increase etch stop layer
Thickness, it might even be possible to do not use etch stop layer, therefore can effectively be promoted be used to form the etching technics of opening technique it is abundant
Degree.In addition, internal connection-wire structure proposed by the invention can be effectively attached with corresponding conductor layer.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and cooperate appended attached drawing
It is described in detail below.
Detailed description of the invention
Figure 1A to Fig. 1 H is the manufacturing process sectional view of the internal connection-wire structure of one embodiment of the invention.
Fig. 2A to Fig. 2 C is the manufacturing process sectional view of the internal connection-wire structure of another embodiment of the present invention.
Fig. 3 is the sectional view of the internal connection-wire structure of another embodiment of the present invention.
[symbol description]
100: substrate
102,302: multilayered structure
104,124a, 124b, 224a, 224b, 226: conductor layer
106,110: dielectric layer
108: etch stop layer
112: patterned mask layer
114: mask open
116,120: filling material layer
116a, 120a, 220a: filling layer
118,122: opening
124,224: conductor material layer
PR: patterning photoresist layer
R1: the first area
R2: the second area
Specific embodiment
Figure 1A to Fig. 1 H is the manufacturing process sectional view of the internal connection-wire structure of one embodiment of the invention.
Firstly, please referring to Figure 1A, multilayered structure 102 is formed in substrate 100.Multilayered structure 102 includes being alternately stacked
Multi-layer conductive layer 104 and multilayer dielectric layer 106.The height of conductor layer 104 in the first area R1, which is lower than, is located at the secondth area
The height of conductor layer 104 in R2.In this embodiment, multilayered structure 102 be illustrated by taking hierarchic structure as an example, but this
Invention is not limited thereto, as long as multilayered structure 102 can carry out subregion according to the height of conductor layer 104 belongs to institute of the present invention
The range of protection.In addition, although this embodiment is illustrated by taking a first area R1 and second area R2 as an example, it is affiliated
Technical field those of ordinary skill can adjust the first area R1 and according to the kenel, the number of plies and technological ability of multilayered structure 102
The quantity of two area R2.
The forming method of multilayered structure 102 is, for example, that depositing operation and Patternized technique is applied in combination and is formed.Conductor layer
104 material is, for example, the conductors material such as DOPOS doped polycrystalline silicon or metal, and wherein metal is, for example, copper or tungsten.The shape of conductor layer 104
It is, for example, chemical vapour deposition technique or physical vaporous deposition at method.The material of dielectric layer 106 is, for example, silica.Dielectric layer
106 forming method is, for example, chemical vapour deposition technique.
Then, etch stop layer 108 is optionally conformally formed on multilayered structure 102.Etch stop layer 108
Material is, for example, silicon nitride.The forming method of etch stop layer 108 is, for example, chemical vapour deposition technique.In other embodiments,
When being subsequently formed enough high in the etching selection ratio of dielectric layer 110 and conductor layer 104 in conductor layer 104, can not also be formed
Etch stop layer 108.
Then, in the dielectric layer 110 for forming covering multilayered structure 102 on etch stop layer 108.The material of dielectric layer 110
E.g. silica.The forming method of dielectric layer 110 is, for example, chemical vapour deposition technique.In addition, also optionally to dielectric
Layer 110 carries out flatening process, such as chemical mechanical milling tech.
Next, in forming patterned mask layer 112 on dielectric layer 110.The material of patterned mask layer 112 is, for example, nitrogen
SiClx, silicon oxynitride, amorphous silicon or polysilicon.The forming method of patterned mask layer 112 is, for example, prior to shape on dielectric layer 110
It (is not painted) at mask layer, then mask layer is patterned and is formed.
Later, with patterned mask layer 112 it is optionally mask, removes part of dielectric layer 110, and in dielectric layer
Multiple mask opens 114 are formed in 110.The removing method of part of dielectric layer 110 is, for example, dry etching method.In other embodiments
In, mask open 114 can not also be formed.
Furthermore Figure 1B is please referred to, the filling material layer 116 of overlay pattern mask layer 112 and dielectric layer 110 is formed.This
Outside, filling material layer 116 can also be inserted in mask open 114.The material for inserting material layer 116 is, for example, organic dielectric materials.
The forming method for inserting material layer 116 is, for example, method of spin coating.
Followed by, patterning photoresist layer PR is formed in the filling material layer 116 in the second area R2.Pattern photoresist layer
The forming method of PR is, for example, organic photoresist material.The forming method for patterning photoresist layer PR is, for example, to carry out photoetching process
And it is formed.
Then, Fig. 1 C is please referred to, to pattern photoresist layer PR as mask, removes the filling material layer in the first area R1
116, and filling floor 116a is formed in the second area R2.Filling layer 116a covers Jie exposed by patterned mask layer 112
Electric layer 110.The removing method of filling material layer 116 in first area R1 is, for example, dry etching method.Although in addition, filling layer
116a is in the above way to be formed, but the present invention is not limited thereto, as long as forming covering dielectric layer in the second area R2
110 filling layer 116a is the range for belonging to the present invention and being protected.
Then, it to insert layer 116a and patterned mask layer 112 as mask, removes in the first area R1 by patterned mask layer
112 dielectric layer 110, etch stop layer 108 and the dielectric layers 106 exposed so that mask open 114 in the first area R1 to
Lower extension and form the multiple openings 118 for exposing conductor layer 104 in the first area R1.By patterned mask layer in first area R1
The removing method of 112 dielectric layer 110, etch stop layer 108 and the dielectric layers 106 exposed is, for example, that dry type quarter is respectively adopted
Erosion method is removed.In addition, the partially patterned mask in the first area R1 may be lost during forming opening 118
Partially patterned photoresist layer PR in floor 112 and the second area R2.
Then, Fig. 1 D is please referred to, patterning photoresist layer PR and filling layer 116a are removed.Patterning photoresist layer PR can be
It is formed and is removed simultaneously in the etching technics of opening 118 or in addition goes photoresist method to be removed using dry type.Insert layer
The removing method of 116a is, for example, dry etching method.
Next, being formed in overlay pattern mask layer 112 and dielectric layer 110 and filling opening 118 and mask open 114
Filling material layer 120.The material of filling material layer 120 is, for example, organic dielectric materials or conductor material, wherein conductor material
The e.g. metals such as tungsten or copper.The forming method for inserting material layer 120 is, for example, method of spin coating, physical vaporous deposition or change
Learn vapour deposition process.In this embodiment, the material for inserting material layer 120 is to be formed by organic Jie by method of spin coating
It is illustrated for electric material.
Later, Fig. 1 E is please referred to, technique is etched back to filling material layer 120, to remove the filling in the second area R2
Material layer 120, and the dielectric layer 110 in the second area R2 is exposed, and form the filling layer 120a in filling opening 118.Filling
The upper surface of layer 120a is, for example, the top for being lower than opening 118.Although in addition, filling layer 120a be in the above way to be formed,
But the present invention is not limited thereto, as long as the filling floor 120a formed in filling opening 118 in the first area R1 belongs to this
Invent protected range.
Furthermore please refer to Fig. 1 F, to insert layer 120a and patterned mask layer 112 as mask, remove in the second area R2 by
Dielectric layer 110, etch stop layer 108 and the dielectric layer 106 that patterned mask layer 112 is exposed, so that in the second area R2
Mask open 114 extends downwardly and forms the multiple openings 122 for exposing the conductor layer 104 in the second area R2.In second area R2
The removing method of the dielectric layer 110, etch stop layer 108 and the dielectric layer 106 that are exposed by patterned mask layer 112 is, for example,
Dry etching method is respectively adopted to be removed.In this embodiment, after the etching technics for be formed opening 122, due to
Can be by the lower part of filling layer 120a protection opening 118, therefore the upper width of opening 118 is, for example, to be greater than lower width.This
Outside, during forming opening 118, partially patterned mask layer 112 and part filling layer 120a may be lost.
At this point, having formed the hatch frame in the present embodiment including opening 118 with opening 122.Wherein, opening 118 with open
Mouth 122 can be hole (hole) or channel (trench), such as contact fenestra (contact hole) or wire channel respectively
(conductive line trench)。
Based on above-mentioned it is found that filling layer can be passed through in the manufacturing method for the hatch frame that above-described embodiment is proposed
116a carries out subregion etching with filling layer 120a.It is, filling layer 116a can be used to cover when forming opening 118
Dielectric layer 110 in second area R2, and when forming opening 122, it filling floor 120a can be used to protect in the first area R1 by opening
The conductor layers 104 that mouth 118 is exposed.Whereby, when the number of plies of multilayered structure 102 increases, without increase etch stop layer
108 thickness, it might even be possible to not use etch stop layer 108, therefore can effectively be promoted and be used to form opening 118 and opening
The process margin of 122 etching technics.
Followed by, Fig. 1 G is please referred to, filling layer 120a is removed.The removing method for inserting layer 120a is, for example, dry etching method.
Then, the conductor material layer 124 of filling opening 118 with opening 122 is formed.In addition, conductor material layer 124 can also cover
Lid patterned mask layer 112.The material of conductor material layer 124 is, for example, the metals such as tungsten or copper.The formation side of conductor material layer 124
Rule physical vaporous deposition in this way.
Then, Fig. 1 H is please referred to, opening 118 and the conductor material layer 124 other than opening 122 are removed, and in opening 118
Conductor layer 124a is formed, and forms conductor layer 124b in opening 122.Conductor layer 124a is connected to the conductor layer in the first area R1
104, and conductor layer 124b is connected to the conductor layer 104 in the second area R2.Conductor layer 124a is different from the profile of conductor layer 124b,
And the upper width of conductor layer 124a is greater than lower width.In addition, conductor layer 124b has no point of apparent top and lower part, and
There can be generally uniform width.The removing method of opening 118 and the conductor material layer 124 other than opening 122 is, for example, to change
It learns mechanical milling method or is etched back to method.In this embodiment, the conductor material layer 124 other than opening 118 and opening 122 is being removed
During, patterned mask layer 114 can be removed simultaneously.In another embodiment, can also formed conductor material layer 124 it
It is preceding just first to remove patterned mask layer 114.
At this point, having formed the internal connection-wire structure in the present embodiment including conductor layer 124a and conductor layer 124b.Wherein, conductor
Layer 124a and conductor layer 124b can be respectively contact hole or conducting wire.
Based on above-mentioned it is found that conductor layer 124a and conductor layer 124b in internal connection-wire structure made by above-described embodiment divide
It can be aligned accurately, therefore can effectively be connected with corresponding conductor layer 104 with corresponding conductor layer 104
It connects.
In addition, the hatch frame introduced of above-described embodiment and internal connection-wire structure and its manufacturing method be applicable to it is various
Three-dimensional NAND gate type flash memory in semiconductor element with multilayered structure 102, such as 3 D semiconductor element etc..
Fig. 2A to Fig. 2 C is the manufacturing process sectional view of the internal connection-wire structure of another embodiment of the present invention.
Firstly, the difference of Fig. 2A and Fig. 1 F is referring to Fig. 2A and Fig. 1 F: filling layer 220a and figure in Fig. 2A
The material of filling layer 120a in 1F is different.The material of filling layer 220a in Fig. 2A is with conductor material (e.g., the gold such as tungsten or copper
Belong to) for be illustrated.In addition to this, configuration mode, material, forming method and the function of other components in Fig. 2A and Fig. 1 F
Imitate it is similar, therefore use identical label indicate and the description thereof will be omitted.
Then, the conductor material layer 224 of opening 118 with opening 122 is inserted in B, formation referring to figure 2..In addition, conductor material
Layer 224 goes back coverability graph case mask layer 112.The material of conductor material layer 224 is, for example, the metals such as tungsten or copper.Conductor material layer
224 forming method is, for example, physical vaporous deposition.
Then, C referring to figure 2. removes opening 118 and the conductor material layer 224 other than opening 122, and in opening 118
Conductor layer 224a is formed, and forms conductor layer 224b in opening 122.Conductor layer 224a and filling layer 220a form conductor layer
226, and insert layer 220a and formed between conductor layer 226 with contact surface.Conductor layer 226 is connected to the conductor layer in the first area R1
104, and conductor layer 224b is connected to the conductor layer 104 in the second area R2.Conductor layer 226 is different from the profile of conductor layer 224b,
And the upper width of conductor layer 226 is greater than lower width.In addition, conductor layer 224b has no point of apparent top and lower part, and
There can be generally uniform width.In this embodiment, the conductor material layer 224 other than opening 118 and opening 122 is being removed
During, patterned mask layer 114 can be removed simultaneously.In another embodiment, can also formed conductor material layer 224 it
It is preceding just first to remove patterned mask layer 114.
At this point, having formed the internal connection-wire structure in the present embodiment including conductor layer 226 and conductor layer 224b.Wherein, conductor
Layer 226 and conductor layer 224b can be respectively contact hole or conducting wire.
In this embodiment, conductor layer 224a is respectively formed via being filled out hole technique (fill-in process) twice
With filling layer 220a and complete the production of conductor layer 226.Therefore, conductor layer 226, which has, preferably fills out hole ability, and can prevent
In conductor layer 226 generate hole (void), so can be avoided because in conductor layer 226 there are hole due to cause resistance value improve
Situation.
Based on above-mentioned it is found that hatch frame and its manufacturing method through the foregoing embodiment, can effectively be promoted for shape
At the process margin of opening 118 and the etching technics of opening 122.In addition, the conductor layer in the internal connection-wire structure of above-described embodiment
226,224b can be effectively attached with corresponding conductor layer 104.
Fig. 3 is the sectional view of the internal connection-wire structure of another embodiment of the present invention.
Referring to Fig. 3 and Fig. 1 H, the difference of Fig. 3 and Fig. 1 H is: in the multilayered structure 302 and Fig. 1 H in Fig. 3
The kenel of multilayered structure 102 is different.Multilayered structure 302 in Fig. 3 is to be with the first area R1 and two second area R2
Example is illustrated.In addition to this, configuration mode, material, forming method and effect phase of other components in Fig. 3 and Fig. 1 H
Seemingly, therefore identical label is used to indicate that simultaneously the description thereof will be omitted.
Illustrate the hatch frame in above-described embodiment below by way of Fig. 1 F and Fig. 2A.
Referring to Fig. 1 F and Fig. 2A, hatch frame includes substrate 100, multilayered structure 102 and dielectric layer 110.Multilayer
Structure 102 is set in substrate 100.Multilayered structure 102 includes the multi-layer conductive layer 104 being alternately stacked and multilayer dielectric layer
106.The height of conductor layer 104 in the first area R1 is lower than the height for the conductor layer 104 being located in the second area R2.Dielectric layer
110 covering multilayered structures 102, and there are multiple openings 118 and multiple openings 122 in dielectric layer 110.Each 118 exposure of opening
One in conductor layer 104 in first area R1 out, and each opening 122 exposes in the conductor layer 104 in the second area R2
One.Opening 118 is different from the profile of opening 122, and the upper width of opening 118 is greater than lower width.In addition, hatch frame
Also optionally include etch stop layer 108.Etch stop layer 108 is conformally arranged on multilayered structure 102.Except this it
Outside, configuration mode, material, forming method and effect of each component in Fig. 1 F and Fig. 2A are in hereinbefore at large being said
It is bright, therefore repeated no more in this.
Illustrate the internal connection-wire structure in above-described embodiment below by way of Fig. 1 H and Fig. 2 C.
Fig. 1 H is please referred to, internal connection-wire structure includes substrate 100, multilayered structure 102, dielectric layer 110, multi-layer conductive layer 124a
With multi-layer conductive layer 124b.The explanation of substrate 100, multilayered structure 102 and dielectric layer 110 can refer to above, repeat no more in this.
Conductor layer 124a and conductor layer 124b are set in the dielectric layer 110.Conductor layer 124a is connected to the conductor layer in the first area R1
104, and conductor layer 124b is connected to the conductor layer 104 in the second area R2.Conductor layer 124a is different from the profile of conductor layer 124b,
And the upper width of conductor layer 124a is greater than lower width.In addition, conductor layer 124b has no point of apparent top and lower part, and
There can be generally uniform width.Internal connection-wire structure more optionally includes etch stop layer 108.Etch stop layer 108
It is conformally arranged on multilayered structure 102.In addition to this, configuration mode, material, forming method and effect of each component of Fig. 1 H
In hereinbefore at large being illustrated, therefore repeated no more in this.
Referring to Fig. 2 C and Fig. 1 H, the internal connection-wire structure in Fig. 2 C includes conductor layer 226 and conductor layer 224b, conductor
Floor 226 is connected to the conductor layer 104 in the first area R1, and conductor layer 224b is connected to the conductor layer 104 in the second area R2.Fig. 2 C
Be with the difference of Fig. 1 H: conductor layer 226 includes filling layer 220a (lower conductor layer) and conductor layer 224a (upper conductor layer).
Filling layer 220a is connected to corresponding conductor layer 104.Conductor layer 224a is set on filling layer 220a.In addition to this, Fig. 2 C
It is similar to effect to the configuration mode of other components in Fig. 1 H, material, forming method, therefore indicate and omit using identical label
Its explanation.
In conclusion hatch frame and its manufacturing method that above-described embodiment is proposed can be promoted effectively and be used to form out
The process margin of the etching technics of mouth.In addition, the internal connection-wire structure that above-described embodiment is proposed can effectively be led with corresponding
Body layer is attached.
Although the present invention has been disclosed by way of example above, it is not intended to limit the present invention., any technical field
Middle those of ordinary skill, without departing from the spirit and scope of the present invention, when the change and modification that can make part, thus it is of the invention
Protection scope is subject to view as defined in claim.
Claims (9)
1. a kind of manufacturing method of the hatch frame for 3 D semiconductor element characterized by comprising
A multilayered structure is formed in a substrate, wherein multilayered structure includes the multi-layer conductive layer being alternately stacked and multilayer first
Dielectric layer, and the height for those conductor layers being located in one first area is lower than the height for those conductor layers being located in one second area
Degree；
Form one second dielectric layer for covering the multilayered structure；
In forming a patterned mask layer on second dielectric layer；
One first filling floor is formed in secondth area, wherein the first filling layer covering is exposed by the patterned mask layer
Second dielectric layer；
Using the first filling layer and the patterned mask layer as mask, the more of those conductor layers exposed in firstth area are formed
A first opening；
Remove the first filling layer；
Form one second filling layer in those first openings of filling；And
Using the second filling layer and the patterned mask layer as mask, the more of those conductor layers exposed in secondth area are formed
A second opening.
2. the manufacturing method of hatch frame according to claim 1, wherein the multilayered structure includes hierarchic structure.
3. the manufacturing method of hatch frame according to claim 1, which is characterized in that further include forming second dielectric
Before layer, an etch stop layer is conformally formed on the multilayered structure.
4. the manufacturing method of hatch frame according to claim 1, which is characterized in that further include forming first filling
Before layer, using the patterned mask layer as mask, part second dielectric layer is removed, and is formed in second dielectric layer multiple
Mask open.
5. the manufacturing method of hatch frame according to claim 1, wherein the forming method of those the first openings includes:
Using the first filling layer and the patterned mask layer as mask, removes and exposed in firstth area by the patterned mask layer
Second dielectric layer and first dielectric layer out.
6. a kind of hatch frame for 3 D semiconductor element characterized by comprising
One substrate；
One multilayered structure is set in the substrate, and wherein multilayered structure includes the first conductor layer of multilayer being alternately stacked and more
The first dielectric layer of layer, and the height for those the first conductor layers being located in one first area be lower than be located in one second area those the
The height of one conductor layer；And
One second dielectric layer covers the multilayered structure, and has one first opening and one second opening in second dielectric layer,
In:
First opening exposes one in those first conductor layers in firstth area, second opening expose this second
One in those first conductor layers in area,
First opening is different from the profile of second opening, and the upper width of first opening is greater than lower width；
Wherein, first opening is with one first filling floor in the secondth area and the patterned mask layer on the second dielectric layer
It is formed for mask, second opening is to insert layer and the patterned mask layer with one second in those first openings to cover
Mould is formed；
The hatch frame further include: the second conductor layer of multilayer is set in second dielectric layer, respectively the second conductor layer packet
Include: a lower conductor layer is connected to corresponding first conductor layer to insert layer；And a upper conductor layer, it is set to this
On lower conductor layer；The lower conductor layer and upper conductor layer are respectively formed via being filled out hole technique twice.
7. hatch frame according to claim 6, wherein the multilayered structure includes hierarchic structure.
8. a kind of internal connection-wire structure for 3 D semiconductor element characterized by comprising
One substrate；
One multilayered structure is set in the substrate, and wherein multilayered structure includes the first conductor layer of multilayer being alternately stacked and more
The first dielectric layer of layer, and the height for those the first conductor layers being located in one first area be lower than be located in one second area those the
The height of one conductor layer；
One second dielectric layer, covers the multilayered structure；And
The second conductor layer of multilayer and multilayer third conductor layer, are set in second dielectric layer, in which:
Those second conductor layers are connected to those first conductor layers in firstth area, those third conductor layers be connected to this second
Those first conductor layers in area,
Under those second conductor layers are different from the profile of those third conductor layers, and the upper width of those the second conductor layers is greater than
Portion's width；
Wherein, respectively second conductor layer includes: a lower conductor layer, to insert layer, is connected to corresponding first conductor layer；
And a upper conductor layer, it is set on the lower conductor layer；The lower conductor layer and upper conductor layer are via progress two
Secondary hole technique of filling out is respectively formed.
9. internal connection-wire structure according to claim 8, wherein the multilayered structure includes hierarchic structure.
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