CN106350784A - Double-row gas guide type low-pressure chemical gas-phase precipitation cavity - Google Patents
Double-row gas guide type low-pressure chemical gas-phase precipitation cavity Download PDFInfo
- Publication number
- CN106350784A CN106350784A CN201610885427.3A CN201610885427A CN106350784A CN 106350784 A CN106350784 A CN 106350784A CN 201610885427 A CN201610885427 A CN 201610885427A CN 106350784 A CN106350784 A CN 106350784A
- Authority
- CN
- China
- Prior art keywords
- gas
- cavity
- gas guide
- conveyor belt
- double
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
The invention relates to a double-row gas guide type low-pressure chemical gas-phase precipitation cavity which comprises a cavity; gas guide tubes and a supporting structure used for supporting wafers are arranged in the cavity; the gas guide tubes are symmetrically positioned at the two sides of the supporting structure; gas guide holes, which face towards the supporting structure, are formed in the gas guide tubes; the supporting structure comprises a conveyor belt which is vertically arranged, wherein the upper end and the lower end of the conveyor belt are wound on rotary shafts; one rotary shaft at one of the upper end and the lower end is connected with a drive motor; and chucks for clamping the wafers are arranged on the conveyor belt at intervals. According to the double-row gas guide type low-temperature chemical gas-phase precipitation cavity, reaction gas is guided into the cavity from the gas guide tubes at the two sides, the drive motor drives the conveyor belt to rotate up and down in a circulating mode, and the wafers on the conveyor belt also rotate along with the conveyor belt, so that the wafers are in contact with the reaction gas in a movable mode, reaction uniformity between the wafers and the reaction gas is improved, and uniformity of a formed film is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly to the chemical gaseous phase deposition chamber of wafer.
Background technology
Low pressure chemical phase precipitation refers to be pumped into low-pressure state in precipitation chamber, reacting gas is inserted in precipitation chamber, instead
Answer gas diffusion to the crystal column surface precipitating in chamber, the reaction zone near crystal column surface reacts formation thin film.Existing
The structure design that low pressure chemical precipitates chamber is unreasonable, and reacting gas can not uniformly diffuse to crystal column surface, and result in is thin
Non-uniform film thickness is even.
Content of the invention
The problems referred to above existing for prior art, applicant is studied and is improved, and provides a kind of double gas operated low
Pressure chemical gaseous phase deposition chamber, using air-guide type and the rotation clamping wafer side formula of double airway, improves the expansion of reacting gas
Scattered uniformity, improves the uniform in shaping degree of thin film.
In order to solve the above problems, the present invention is using following scheme:
A kind of double gas operated low pressure chemical phase precipitates chamber, including cavity, is built-in with airway and use in described cavity
In the supporting construction supporting wafer, described airway is symmetrically positioned in the both sides of described supporting construction, airway has towards institute
State the gas port of supporting construction；Described supporting construction includes the conveyer belt being vertically arranged, and the upper and lower ends of conveyer belt are wound in and turn
On axle, the one rotating shaft of upper and lower side is connected with motor, and described conveyer belt is arranged at intervals with the chuck of clamping wafer.
The method have technical effect that:
In the present invention, reacting gas imports in cavity from the airway of both sides, is driven on conveyer belt by motor
Lower cycle rotation, wafer concomitant rotation thereon, thus realizing the portable haptoreaction gas of wafer, improves and reacting gas
Reaction uniformity, improve form film the uniformity.
Brief description
Fig. 1 is the structural representation of the present invention.
In figure: 1, cavity；2nd, supporting construction；21st, conveyer belt；22nd, rotating shaft；3rd, airway；4th, gas port；5th, wafer；6、
Chuck.
Specific embodiment
Below in conjunction with the accompanying drawings the specific embodiment of the present invention is described further.
As shown in figure 1, the double gas operated low pressure chemical phase precipitation chamber of the present embodiment, including cavity 1, interior in cavity 1
It is equipped with airway 3 and the supporting construction 2 for supporting wafer, airway 3 is symmetrically positioned in the both sides of supporting construction 2, on airway 3
There is the gas port 4 towards supporting construction 2；Supporting construction 2 includes the conveyer belt 21 being vertically arranged, the upper and lower ends of conveyer belt 21
It is wound in rotating shaft 22, the one rotating shaft 22 of upper and lower side is connected with motor, conveyer belt 21 is arranged at intervals with clamping wafer 5
Chuck 6.During use, reacting gas imports in cavity 1 from the airway 3 of both sides, drives conveyer belt 21 by motor
Up and down cycle rotation, wafer 5 concomitant rotation thereon, thus realizing the portable haptoreaction gas of wafer 5, improving and reacting
The reaction uniformity of gas, improves the uniformity of form film.
Embodiment provided above is the better embodiment of the present invention, is only used for the convenient explanation present invention, not to this
Bright make any pro forma restriction, any those of ordinary skill in the art, if without departing from the carried skill of the present invention
In the range of art feature, using the Equivalent embodiments locally changed done by disclosed technology contents or modify, and
Without departing from the technical characteristic content of the present invention, all still fall within the range of the technology of the present invention feature.
Claims (1)
1. a kind of double gas operated low pressure chemical phase precipitates chamber, including cavity (1), is built-in with airway in described cavity (1)
(3) and for support wafer supporting construction (2) it is characterised in that: described airway (3) is symmetrically positioned in described supporting construction
(2) both sides, airway (3) has the gas port (4) towards described supporting construction (2)；Described supporting construction (2) includes perpendicular
The conveyer belt (21) of straight setting, the upper and lower ends of conveyer belt (21) are wound in rotating shaft (22), the one rotating shaft (22) of upper and lower side
It is connected with motor, described conveyer belt (21) is arranged at intervals with the chuck (6) of clamping wafer (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610885427.3A CN106350784A (en) | 2016-10-10 | 2016-10-10 | Double-row gas guide type low-pressure chemical gas-phase precipitation cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610885427.3A CN106350784A (en) | 2016-10-10 | 2016-10-10 | Double-row gas guide type low-pressure chemical gas-phase precipitation cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106350784A true CN106350784A (en) | 2017-01-25 |
Family
ID=57865715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610885427.3A Withdrawn CN106350784A (en) | 2016-10-10 | 2016-10-10 | Double-row gas guide type low-pressure chemical gas-phase precipitation cavity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106350784A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1315588A (en) * | 2000-01-26 | 2001-10-03 | 李铁真 | Equipment for thermochemical vapour deposition and method for making carbon nm tube with this equipment |
| CN101399173A (en) * | 2007-09-26 | 2009-04-01 | 东京毅力科创株式会社 | Heat treatment method and heat treatment apparatus |
| CN103108986A (en) * | 2010-07-07 | 2013-05-15 | 磊威技术有限公司 | Method and apparatus for contactlessly advancing substrates |
| KR20140076796A (en) * | 2012-12-13 | 2014-06-23 | 엘아이지에이디피 주식회사 | atomic layer deposition apparatus |
| CN104674184A (en) * | 2013-12-02 | 2015-06-03 | 有研新材料股份有限公司 | Gas conveying device and deposition method for silica-based polycrystalline silicon membrane deposition |
-
2016
- 2016-10-10 CN CN201610885427.3A patent/CN106350784A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1315588A (en) * | 2000-01-26 | 2001-10-03 | 李铁真 | Equipment for thermochemical vapour deposition and method for making carbon nm tube with this equipment |
| CN101399173A (en) * | 2007-09-26 | 2009-04-01 | 东京毅力科创株式会社 | Heat treatment method and heat treatment apparatus |
| CN103108986A (en) * | 2010-07-07 | 2013-05-15 | 磊威技术有限公司 | Method and apparatus for contactlessly advancing substrates |
| KR20140076796A (en) * | 2012-12-13 | 2014-06-23 | 엘아이지에이디피 주식회사 | atomic layer deposition apparatus |
| CN104674184A (en) * | 2013-12-02 | 2015-06-03 | 有研新材料股份有限公司 | Gas conveying device and deposition method for silica-based polycrystalline silicon membrane deposition |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20170125 |
|
| WW01 | Invention patent application withdrawn after publication |