CN106350773A - 一种增大层状钴基氧化物薄膜高温热电势的方法 - Google Patents
一种增大层状钴基氧化物薄膜高温热电势的方法 Download PDFInfo
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- 238000004549 pulsed laser deposition Methods 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
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- 239000000463 material Substances 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 abstract 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 230000000680 avirulence Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
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- 238000009413 insulation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
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Abstract
本发明公开了一种增大层状钴基氧化物薄膜高温热电势的方法,属于功能薄膜材料领域。其特征在于:通过脉冲激光沉积在c轴倾斜的单晶衬底上制备层状钴基氧化物外延薄膜,从而在薄膜倾斜方向上获得增大的高温热电势。本发明能显著提高层状钴基氧化物薄膜的高温热电势,且重复性好、易于实现。
Description
技术领域
本发明公开了一种增大层状钴基氧化物薄膜高温热电势的方法,属于功能薄膜材料领域。
背景技术
错层状结构A3Co4O9 (A=Ca, Sr)由于其高温、氧化环境下物理化学性能稳定,原料成本低、无毒性等优点,受到广泛关注。其晶体结构由传导的CoO2层和绝缘的A2CoO3层沿c轴方向交替堆砌并沿b轴失配,CoO2层中低自旋的Co4+( )提供空穴载流子,将热、电输运强烈局域于ab面内,A2CoO3层作为声子散射中心有效降低材料热导率,使其具有“电子晶体-声子玻璃”的特性,又有显著的热电各向异性。
A3Co4O9 的热电性能主要由热电优值ZT衡量,ZT=S2σTκ-1,其中S、σ、κ和T分别为材料的热电势、电导率、热导率和绝对温度,显然高的热电势对A3Co4O9 的性能至关重要。
目前对于增大A3Co4O9的热电势,主要通过掺杂实现。部分A位或Co位掺杂可提高A3Co4O9的热电势,但其提高效果甚微,且掺杂往往会导致电导率的降低,使ZT提高不大,甚至下降。
发明内容
针对上述技术问题,本发明提供了一种增大层状钴基氧化物薄膜高温热电势的方法,具体包括以下步骤:
(1)c轴倾斜的单晶衬底的预处理:将c轴倾斜单晶衬底在空气气氛、1000℃下一次退火1h,之后在室温下依次用丙酮、酒精和去离子水在超声波清洗器中各处理2min,再在空气气氛、1000℃下二次退火1h。
(2)通过脉冲激光沉积在步骤(1)得到的c轴倾斜单晶衬底上制备层状钴基氧化物外延薄膜,从而在薄膜倾斜方向上获得增大的高温热电势。
其中,所述层状钴基氧化物为Ca3Co4O9或Sr3Co4O9。
其中,所述c轴倾斜的单晶衬底为LaAlO3、SrTiO3、(LaxSr1-x)(AlyTa1-y)O3或Al2O3。
其中,所述c轴倾斜的倾斜角度为0<θ<90°。
其中,所述脉冲激光沉积的工艺条件为KrF准分子激光波长248nm,激光脉宽28ns,激光能量175-350mJ,激光频率2-5Hz,背底真空1×10-3Pa-1×10-4Pa,生长温度730-810℃,生长流动氧压5-50Pa,生长时间5-40min。
本发明的原理:当单晶衬底的晶体学c轴与表面法线存在夹角0<θ<90°(如图1所示),即c轴倾斜时,衬底表面会出现高为衬底c轴晶格常数、倾角为α的台阶;台阶经退火、化学处理后,可形成终结层单一、原子级光滑表面;光滑、规则的台阶形貌可加快薄膜的生长动力学过程,提高薄膜/衬底界面附近的层错能,使CoO2层中的Co4+向中、高自旋态转变,提高薄膜热电势。
本发明的有益效果是增大了层状钴基氧化物薄膜的高温热电势(现有技术在1000K时的热电势一般为180~220μV/K)。
附图说明
图1为外延薄膜及其倾斜方向的示意图。
具体实施方式
下面结合具体实施例对本发明作进一步详细说明,但本发明的保护范围并不限于所述内容。
实施例1
本实施例所述增大层状钴基氧化物薄膜高温热电势的方法,具体包括以下步骤:
(1)将5°倾斜的LaAlO3(001)单晶衬底在空气气氛、1000℃下一次退火1h,之后在室温下依次用丙酮、酒精和去离子水在超声波清洗器中各处理2min,再在空气气氛、1000℃下二次退火1h。
(2)采用脉冲激光沉积技术以波长248nm、激脉宽28ns的KrF准分子激光为光源,以激光能量175mJ、激光频率5Hz、背底真空1×10-3Pa、生长温度780℃、流动氧压30Pa、生长时间5min为生长工艺,在步骤(1)得到的单晶衬底上生长Ca3Co4O9薄膜。
外延薄膜及其倾斜方向的示意图如图1。所得薄膜在1000K时沿倾斜方向的热电势S≈525μV/K,如表1。
实施例2
本实施例所述增大层状钴基氧化物薄膜高温热电势的方法,具体包括以下步骤:
(1)将10°倾斜的LaAlO3(001)单晶衬底在空气气氛、950℃下一次退火2h,之后在室温下依次用丙酮、酒精和去离子水在超声波清洗器中各处理2min,再在空气气氛、950℃下二次退火2h。
(2)采用脉冲激光沉积技术以波长248nm、激脉宽28ns的KrF准分子激光为光源,以激光能量200mJ、激光频率4Hz、背底真空1×10-3Pa、生长温度780℃、流动氧压30Pa、生长时间7.5min为生长工艺,在步骤(1)得到的单晶衬底上生长Ca3Co4O9薄膜。所得薄膜在1000K时沿倾斜方向的热电势S≈550μV/K,如表1。
实施例3
本实施例所述增大层状钴基氧化物薄膜高温热电势的方法,具体包括以下步骤:
(1)将30°倾斜的LaAlO3(001)单晶衬底在空气气氛、1150℃下一次退火0.5h,之后在室温下依次用丙酮、酒精和去离子水在超声波清洗器中各处理2min,再在空气气氛、1150℃下二次退火0.5h。
(2)采用脉冲激光沉积技术以波长248nm、激脉宽28ns的KrF准分子激光为光源,以激光能量250mJ、激光频率3Hz、背底真空1×10-3Pa、生长温度780℃、流动氧压30Pa、生长时间10min为生长工艺,在步骤(1)得到的单晶衬底上生长Ca3Co4O9薄膜。所得薄膜在1000K时沿倾斜方向的热电势S≈570μV/K,如表1。
实施例4
本实施例所述增大层状钴基氧化物薄膜高温热电势的方法,具体包括以下步骤:
(1)将45°倾斜的LaAlO3单晶衬底在空气气氛、1000℃下一次退火1h,之后在室温下依次用丙酮、酒精和去离子水在超声波清洗器中各处理1min,再在空气气氛、1000℃下二次退火1h。
(2)采用脉冲激光沉积技术以波长248nm、激脉宽28ns的KrF准分子激光为光源,以激光能量300mJ、激光频率2Hz、背底真空1×10-3Pa、生长温度780℃、流动氧压30Pa、生长时间15min为生长工艺,在步骤(1)得到的单晶衬底上生长Ca3Co4O9薄膜。所得薄膜在1000K时沿倾斜方向的热电势S≈590μV/K,如表1。
实施例5
本实施例所述增大层状钴基氧化物薄膜高温热电势的方法,具体包括以下步骤:
(1)将60°倾斜的LaAlO3单晶衬底在空气气氛、1000℃下一次退火1h,之后在室温下依次用丙酮、酒精和去离子水在超声波清洗器中各处理5min,再在空气气氛、1000℃下二次退火1h。
(2)采用脉冲激光沉积技术以波长248nm、激脉宽28ns的KrF准分子激光为光源,以激光能量175mJ、激光频率3Hz、背底真空1×10-4Pa、生长温度770℃、流动氧压30Pa、生长时间5min为生长工艺,在步骤(1)得到的单晶衬底上生长Ca3Co4O9薄膜。所得薄膜在1000K时沿倾斜方向的热电势S≈550μV/K,如表1。
实施例6
本实施例所述增大层状钴基氧化物薄膜高温热电势的方法,具体包括以下步骤:
(1)将80°倾斜的LaAlO3单晶衬底在空气气氛、1000℃下一次退火1h,之后在室温下依次用丙酮、酒精和去离子水在超声波清洗器中各处理3min,再在空气气氛、1000℃下二次退火1h。
(2)采用脉冲激光沉积技术以波长248nm、激脉宽28ns的KrF准分子激光为光源,以激光能量175mJ、激光频率3Hz、背底真空1×10-4Pa、生长温度730℃、流动氧压5Pa、生长时间7.5min为生长工艺,在步骤(1)得到的单晶衬底上生长Ca3Co4O9薄膜。所得薄膜在1000K时沿倾斜方向的热电势S≈520μV/K,如表1。
实施例7
本实施例所述增大层状钴基氧化物薄膜高温热电势的方法,具体包括以下步骤:
(1)将85°倾斜的LaAlO3单晶衬底在空气气氛、1000℃下一次退火1h,之后在室温下依次用丙酮、酒精和去离子水在超声波清洗器中各处理2min,再在空气气氛、1000℃下二次退火1h。
(2)采用脉冲激光沉积技术以波长248nm、激脉宽28ns的KrF准分子激光为光源,以激光能量175mJ、激光频率3Hz、背底真空1×10-4Pa、生长温度810℃、流动氧压5Pa、生长时间15min为生长工艺,在步骤(1)得到的单晶衬底上生长Ca3Co4O9薄膜。所得薄膜在1000K时沿倾斜方向的热电势S≈500μV/K,如表1。
表1 衬底倾斜角度及对应薄膜的热电势
。
实施例8
本实施例其他内容同实施例4,不同在于c轴倾斜的单晶衬底为SrTiO3、(LaxSr1-x)(AlyTa1-y)O3或Al2O3,当c轴倾斜的单晶衬底为SrTiO3,所得薄膜在1000K时沿倾斜方向的热电势S≈580μV/K;当c轴倾斜的单晶衬底为(LaxSr1-x)(AlyTa1-y)O3,所得薄膜在1000K时沿倾斜方向的热电势S≈585μV/K;当c轴倾斜的单晶衬底为Al2O3,所得薄膜在1000K时沿倾斜方向的热电势S≈570μV/K。
实施例9
本实施例其他内容同实施例4,不同在于c轴倾斜的单晶衬底上生长Sr3Co4O9薄膜。所得薄膜在1000K时沿倾斜方向的热电势S≈560μV/K。
Claims (5)
1.一种增大层状钴基氧化物薄膜高温热电势的方法,其特征在于:
(1)c轴倾斜的单晶衬底的预处理:将c轴倾斜单晶衬底在空气气氛、950℃~1150℃下一次退火0.5~2h,之后在室温下依次用丙酮、酒精和去离子水在超声波清洗器中各处理1~5min,再在空气气氛、950℃~1150℃下二次退火0.5~2h;
(2)通过脉冲激光沉积在步骤(1)得到的c轴倾斜单晶衬底上制备层状钴基氧化物外延薄膜,从而在薄膜倾斜方向上获得增大的高温热电势。
2.根据权利要求1所述的增大层状钴基氧化物薄膜高温热电势的方法,其特征在于:所述层状钴基氧化物为Ca3Co4O9或Sr3Co4O9。
3.根据权利要求1所述的增大层状钴基氧化物薄膜高温热电势的方法,其特征在于:所述c轴倾斜的单晶衬底为LaAlO3、SrTiO3、(LaxSr1-x)(AlyTa1-y)O3或Al2O3。
4.根据权利要求1所述的增大层状钴基氧化物薄膜高温热电势的方法,其特征在于:所述c轴倾斜的倾斜角度为0<θ<90°。
5.根据权利要求1所述的增大层状钴基氧化物薄膜高温热电势的方法,其特征在于:所述脉冲激光沉积的工艺条件为KrF准分子激光波长248nm,激光脉宽28ns,激光能量175-350mJ,激光频率2-5Hz,背底真空1×10-3Pa-1×10-4Pa,生长温度730-810℃,生长流动氧压5-50Pa,生长时间5-40min。
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CN107513685A (zh) * | 2017-07-26 | 2017-12-26 | 昆明理工大学 | 一种立方相Co基氧化物薄膜的制备方法 |
CN109103324A (zh) * | 2018-06-26 | 2018-12-28 | 昆明理工大学 | 一种热感生电压材料及其应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0769788A (ja) * | 1993-09-01 | 1995-03-14 | Oki Electric Ind Co Ltd | 酸化物超電導体薄膜の形成方法 |
JPH09232641A (ja) * | 1996-02-21 | 1997-09-05 | Toshiba Corp | 超電導素子 |
US20020157699A1 (en) * | 2001-03-19 | 2002-10-31 | Noboru Ichinose | Thermoelectric conversion material and thermoelectric conversion device |
CN101826594A (zh) * | 2010-03-25 | 2010-09-08 | 河北大学 | 一种错配层钴氧化合物热电薄膜光探测器 |
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---|---|---|---|---|
JPH0769788A (ja) * | 1993-09-01 | 1995-03-14 | Oki Electric Ind Co Ltd | 酸化物超電導体薄膜の形成方法 |
JPH09232641A (ja) * | 1996-02-21 | 1997-09-05 | Toshiba Corp | 超電導素子 |
US20020157699A1 (en) * | 2001-03-19 | 2002-10-31 | Noboru Ichinose | Thermoelectric conversion material and thermoelectric conversion device |
CN101826594A (zh) * | 2010-03-25 | 2010-09-08 | 河北大学 | 一种错配层钴氧化合物热电薄膜光探测器 |
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---|---|---|---|---|
CN107513685A (zh) * | 2017-07-26 | 2017-12-26 | 昆明理工大学 | 一种立方相Co基氧化物薄膜的制备方法 |
CN109103324A (zh) * | 2018-06-26 | 2018-12-28 | 昆明理工大学 | 一种热感生电压材料及其应用 |
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