CN106340462A - Installation method of power semiconductor device and controller shell - Google Patents
Installation method of power semiconductor device and controller shell Download PDFInfo
- Publication number
- CN106340462A CN106340462A CN201610851706.8A CN201610851706A CN106340462A CN 106340462 A CN106340462 A CN 106340462A CN 201610851706 A CN201610851706 A CN 201610851706A CN 106340462 A CN106340462 A CN 106340462A
- Authority
- CN
- China
- Prior art keywords
- power semiconductor
- slot
- installation method
- controller housing
- radiating fin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 238000009434 installation Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000000463 material Substances 0.000 claims description 7
- 239000007858 starting material Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004519 grease Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides an installation method of a power semiconductor device and a controller shell. The power semiconductor device is directly or indirectly installed at the inner side wall of the controller shell. The outer side of the controller shell has a slot and a heat radiating fin which is installed in the slot. According to the installation method, the controller can be adapted to different installation occasions, and the heat radiating of the power semiconductor device is good.
Description
Technical field
The present invention relates to a kind of installation method of power semiconductor, particularly to a kind of power semiconductor and control
The installation method of device housing processed, belongs to technical field of electricity.
Background technology
Power semiconductor, is also called power electronic devices, is to have process high voltage, the quasiconductor of high current ability
Device.From tens to several kilovolts, current capacity reaches as high as kilo-ampere to voltage process range.Typical Power Processing, bag
Include frequency conversion, transformation, unsteady flow, power management etc..The power semiconductor of early stage has: heavy-duty diode, IGCT etc., mainly
For industry and power system.With developing rapidly of the novel power semiconductor with power mosfet device as representative,
Present power semiconductor is widely.
Based on the characteristic of power semiconductor high voltage, high current, during its work, caloric value is very big.Fig. 1 is with the most normal
As a example the IGCT radiating seen, in order to install larger heat sink as far as possible, heat sink 11 is arranged on housing bottom 1, IGCT
Be arranged on heat sink 11, the heat that IGCT sends conducts to heat sink 11, then by radiator fan be blown to by force housing it
Outward, reach the purpose of radiating.This mounting means, heat relatively concentrates on enclosure interior, if power semiconductor moment collection
Middle heating, or radiator fan breaks down, and heat cannot distribute in time it is easy to break down.On the left of housing 2 and housing right
The housing area of side 3 does not all use.
In view of the deficiencies in the prior art, those skilled in the art be devoted to research and development application in power semiconductor other
Radiator structure and radiating mode.
Content of the invention
The technical problem to be solved is: so that power semiconductor is preferably radiated.
In order to solve above technical problem, the installation method of a kind of power semiconductor and controller housing, power half
Conductor device is mounted directly or indirectly to the medial wall of controller housing.
Further, heat sink is installed between housing and power semiconductor.
Further, directly laminating is installed on medial wall to power semiconductor.
Further, the outside of controller housing carries slot and radiating fin, and radiating fin is arranged in slot.Slot
Pass through dovetail groove, square groove or arcuate groove cooperation with radiating fin to install.It is disposed with heat conduction material between radiating fin and slot
Material.
Further, slot includes a plurality of first slot and a plurality of second slot, the first slot cloth vertical with the second slot
Put formation slot grid.When controller is vertically-mounted, radiating fin inserts the first slot.When controller is horizontally mounted, dissipate
Hot fin inserts the second slot.
Further, controller refers to soft starter or converter, and power semiconductor refers to IGCT or insulation
Grid bipolar transistor.
Beneficial effects of the present invention: controller can adapt to different mounting locations, power semiconductor can be more preferable
Ground radiating.
Brief description
Fig. 1 is the scheme of installation of power semiconductor in prior art；
Fig. 2 is the scheme of installation of power semiconductor in a preferred embodiment of the present invention；
Fig. 3 is the scheme of installation of power semiconductor in another preferred embodiment of the present invention；
Fig. 4 is the first structural representation of Split radiator in the present invention；
Fig. 5 is the second structural representation of Split radiator in the present invention；
Fig. 6 is the third structural representation of Split radiator in the present invention.
Specific embodiment
Technique effect below with reference to design, concrete structure and generation to the present invention for the accompanying drawing is described further, with
It is fully understood from the purpose of the present invention, feature and effect.
What Fig. 2 showed is first embodiment of the present invention, housing include housing bottom 1, on the left of housing 2 and housing on the right side of
3, on the left of housing, 2 install left side heat sink 21, and on the right side of housing, 3 install right side heat sink 31, and power semiconductor (do not show by figure
Go out) it is separately mounted to left side heat sink 21 and right side heat sink 31.The radiating fin of left side heat sink 21 is located at 2 Hes on the left of housing
Between power semiconductor, dried against radiating fin by fan.On the right side of housing, 3 can open up near the position of radiating fin
Radiator window 30, being connected by hinge page with the right side of housing 3 of radiator window 30, another side can be opened, the design of similar door.Work as work(
When rate semiconductor device heating amount is little, radiator fan need not be installed, radiator window 30 is opened, housing is inside and outside to form air stream
Logical, heat distributes naturally.
What Fig. 3 showed is second embodiment of the present invention, housing include housing bottom 1, on the left of housing 2 and housing on the right side of
3, on the left of housing, 2 outer surface installs left side heat sink 22, and on the right side of housing, 3 outer surface installs right side heat sink 32, power half
Conductor device (not shown) is separately mounted on the right side of 2 inner surface and housing on the left of housing 3 inner surface.Power semiconductor
The heat that device sends, conducts to left side heat sink 22 through housing left plate 2, is naturally dissipated to the external world.If housing left plate 2 and shell
Body right plate 3 is limited to material itself and the capacity of heat transmission is not good, can dig out respectively thereon and left side heat sink 22 and right side radiating
The big square opening of plate 32 grade, left side heat sink 22 or right side heat sink 32 is installed in square opening, power semiconductor is straight
Connect and be arranged on left side heat sink 22 or right side heat sink 32, radiating is faster.
In view of the different mounting means of controller, for example, vertically hang and install or horizontal positioned installation, can will radiate
Split-type structural made by plate, as shown in Fig. 4～Fig. 6.Illustrate, heat sink is divided into pedestal 41 and radiating fin 42, base taking Fig. 4 as a example
Multiple the first grooves 43 being parallel to each other and multiple the second groove 44 being parallel to each other are had on seat 41, forms recess mesh.Recessed
Trench bottom has square groove, and radiating fin 42 bottom is provided with the square lug, nib with square groove cooperation.When controller vertically hangs peace
During dress, radiating fin 42 inserts the first groove 43.When controller horizontal positioned is installed, radiating fin 42 inserts the second groove
44.Below all it is ensured that radiating fin 42 keeps vertical or near vertical state with horizontal plane, obtain preferable radiating effect.
First groove 43 (or second groove 44) smears Heat Conduction Material, such as silicone grease and radiating fin 42 between.
Shown in Fig. 5 is the heat sink of dovetail groove type.Heat sink is divided into pedestal 51 and radiating fin 52, and pedestal 51 has
Multiple the first grooves 53 being parallel to each other and multiple the second groove 54 being parallel to each other, form recess mesh.Bottom portion of groove has
Dovetail groove, radiating fin 52 bottom is provided with the triangle lug, nib with dovetail groove cooperation.Dovetail groove can make pedestal 51 and radiating fin
52 firmly install.First groove 53 (or second groove 54) smears Heat Conduction Material, such as silicone grease and radiating fin 52 between.
Shown in Fig. 6 is the heat sink of arc-shaped groove-type.Heat sink is divided into pedestal 61 and radiating fin 62, and pedestal 61 has
Multiple the first parallel grooves 63 and multiple the second parallel grooves 64, form recess mesh.Pocket Machining becomes, radiating fin 62
Bottom is set as lug, nib.Compared with the dovetail groove of Fig. 4 square groove and Fig. 5, curved slot arrangement is simple, easy to process.First groove 63 (or
Second groove 64) smear Heat Conduction Material, such as silicone grease and radiating fin 62 between.
Controller in the present invention refers to soft starter or converter.Power semiconductor refers to IGCT or insulation
Grid bipolar transistor.
The preferred embodiment of the present invention described in detail above.It should be appreciated that those of ordinary skill in the art is no
Need creative work just can make many modifications and variations according to the design of the present invention.Therefore, all technology in the art
It is available that personnel pass through logical analysis, reasoning, or a limited experiment under this invention's idea on the basis of existing technology
Technical scheme, all should be in the protection domain being defined in the patent claims.
Claims (10)
1. the installation method of a kind of power semiconductor and controller housing is it is characterised in that described power semiconductor
It is mounted directly or indirectly to the medial wall of controller housing.
2. a kind of power semiconductor according to claim 1 and controller housing installation method it is characterised in that
Between described housing and described power semiconductor, heat sink is installed.
3. a kind of power semiconductor according to claim 1 and controller housing installation method it is characterised in that
Directly laminating is installed on described medial wall to described power semiconductor.
4. a kind of power semiconductor according to claim 1 and controller housing installation method it is characterised in that
The outside of described controller housing carries slot and radiating fin, and described radiating fin is arranged in described slot.
5. a kind of power semiconductor according to claim 4 and controller housing installation method it is characterised in that
Described slot and described radiating fin pass through dovetail groove, square groove or arcuate groove cooperation and install.
6. a kind of power semiconductor according to claim 4 and controller housing installation method it is characterised in that
It is disposed with Heat Conduction Material between described radiating fin and described slot.
7. a kind of power semiconductor according to claim 4 and controller housing installation method it is characterised in that
Described slot includes a plurality of first slot and a plurality of second slot, and described first slot is arranged vertically with described second slot and is formed
Slot grid.
8. a kind of power semiconductor according to claim 7 and controller housing installation method it is characterised in that
When described controller is vertically-mounted, described radiating fin inserts described first slot.
9. a kind of power semiconductor according to claim 7 and controller housing installation method it is characterised in that
When described controller is horizontally mounted, described radiating fin inserts described second slot.
10. the installation method of a kind of power semiconductor according to claim 1 and controller housing, its feature exists
In described controller refers to soft starter or converter, and described power semiconductor refers to IGCT or insulated gate bipolar
Transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610851706.8A CN106340462B (en) | 2016-09-27 | 2016-09-27 | A kind of installation method of power semiconductor and controller housing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610851706.8A CN106340462B (en) | 2016-09-27 | 2016-09-27 | A kind of installation method of power semiconductor and controller housing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106340462A true CN106340462A (en) | 2017-01-18 |
| CN106340462B CN106340462B (en) | 2019-05-31 |
Family
ID=57839277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610851706.8A Active CN106340462B (en) | 2016-09-27 | 2016-09-27 | A kind of installation method of power semiconductor and controller housing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106340462B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108829010A (en) * | 2018-07-17 | 2018-11-16 | 南阳理工学院 | A kind of intelligent electrical controller |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201515566U (en) * | 2009-09-15 | 2010-06-23 | 常州佳盟电子科技有限公司 | Electric bicycle controller shell |
| CN101963339A (en) * | 2010-10-09 | 2011-02-02 | 王春 | Integrated radiating device for high-power LED light source |
| CN202262201U (en) * | 2011-09-15 | 2012-05-30 | 上海通用重工集团有限公司 | Novel heat radiator |
| CN202374592U (en) * | 2011-12-22 | 2012-08-08 | 刘卫东 | Electric vehicle controller |
| CN103457443A (en) * | 2013-08-29 | 2013-12-18 | 常州苏控自动化设备有限公司 | Frequency converter with good heat dissipation performance |
| CN204948601U (en) * | 2015-09-10 | 2016-01-06 | 肥东凯利电子科技有限公司 | A kind of electric machine controller |
| CN205319422U (en) * | 2015-12-08 | 2016-06-15 | 无锡康博瑞特电子科技有限公司 | Compress tightly power semiconductor's device |
-
2016
- 2016-09-27 CN CN201610851706.8A patent/CN106340462B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201515566U (en) * | 2009-09-15 | 2010-06-23 | 常州佳盟电子科技有限公司 | Electric bicycle controller shell |
| CN101963339A (en) * | 2010-10-09 | 2011-02-02 | 王春 | Integrated radiating device for high-power LED light source |
| CN202262201U (en) * | 2011-09-15 | 2012-05-30 | 上海通用重工集团有限公司 | Novel heat radiator |
| CN202374592U (en) * | 2011-12-22 | 2012-08-08 | 刘卫东 | Electric vehicle controller |
| CN103457443A (en) * | 2013-08-29 | 2013-12-18 | 常州苏控自动化设备有限公司 | Frequency converter with good heat dissipation performance |
| CN204948601U (en) * | 2015-09-10 | 2016-01-06 | 肥东凯利电子科技有限公司 | A kind of electric machine controller |
| CN205319422U (en) * | 2015-12-08 | 2016-06-15 | 无锡康博瑞特电子科技有限公司 | Compress tightly power semiconductor's device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108829010A (en) * | 2018-07-17 | 2018-11-16 | 南阳理工学院 | A kind of intelligent electrical controller |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106340462B (en) | 2019-05-31 |
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| GR01 | Patent grant |