CN106337162B

CN106337162B - Deposition apparatus and method of manufacturing display apparatus using the same

Info

Publication number: CN106337162B
Application number: CN201610037512.4A
Authority: CN
Inventors: 李秀奂; 金茂显; 金恩镐
Original assignee: Samsung Display Co Ltd
Current assignee: Samsung Display Co Ltd
Priority date: 2015-07-07
Filing date: 2016-01-20
Publication date: 2020-03-24
Anticipated expiration: 2036-01-20
Also published as: KR20170006325A; KR102356353B1; CN106337162A

Abstract

A deposition apparatus and a method of manufacturing a display device using the same are provided, the deposition apparatus including a first chamber having first and second regions defined therein and arranged in a first direction, a first pattern mask assembly overlapping the first region inside the first chamber, a first deposition source discharging a deposition substance to the first pattern mask assembly while moving in a second direction intersecting the first direction inside the first chamber, a second chamber spaced apart from the first chamber in the first direction and defining the first and second regions arranged in the first direction, a second pattern mask assembly overlapping the second region inside the second chamber, a second deposition source discharging a deposition substance to the second pattern mask assembly while moving in the second direction inside the second chamber, and a second deposition source disposed between the first pattern mask assembly and the first deposition source corresponding to the second region inside the first chamber and disposed between the second pattern mask assembly and the first deposition source corresponding to the first region inside the second chamber and disposed between the second pattern mask assembly and the first mask assembly corresponding to the first region inside the second chamber A baffle plate between the two deposition sources.

Description

Deposition apparatus and method of manufacturing display apparatus using the same

Technical Field

The present invention relates to a deposition apparatus and a method of manufacturing a display apparatus using the same.

Background

Among light-emitting display devices, organic light-emitting display devices have been attracting attention as a next-generation display device because they have advantages of a wide viewing angle, excellent contrast, and a high response speed as a self-light-emitting display element.

An organic light-emitting display device includes a light-emitting layer composed of an organic light-emitting substance between an anode and a cathode. As anode and cathode voltages are applied to these electrodes, respectively, holes (holes) injected from the anode move to the light-emitting layer via the hole injection layer and the hole transport layer, and electrons move from the cathode electrode to the light-emitting layer via the electron injection layer and the electron transport layer, so that electrons and holes recombine in the light-emitting layer. Excitons (exiton) are generated by such recombination, and light is emitted from the light emitting layer as the excitons transition from an excited state to a ground state, thereby displaying an image.

An organic light emitting display device includes a pixel defining film having an opening portion to expose an anode formed in a unit of a pixel, and a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode are formed on the anode exposed through the opening portion of the pixel defining film. Among them, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer may be formed by various methods, one of which is a deposition method. As the deposition method, there are an FMM deposition method in which deposition is performed in a state where a Fine Metal Mask (FMM) having the same size as a substrate is closely attached to the substrate, and an SMS (Small Mask Scanning) deposition method in which deposition is performed while moving the substrate or a deposition source in a state where a Mask having a size smaller than the size of the substrate is spaced apart from the substrate, and the like.

Disclosure of Invention

In one aspect, when a deposition process is performed on a large-sized substrate by the FMM deposition method, a fine metal mask having the same size as that of the large-sized substrate is used. However, since the fine metal mask has a large size, a bending phenomenon due to the self weight of the fine metal mask may occur in the deposition process. Such a bending phenomenon may distort a pattern of a thin film formed by depositing a deposition substance.

In addition, when a deposition process is performed on a large-sized substrate by the SMS deposition method, a small-sized mask having a size smaller than that of the large-sized substrate is used. However, the size of the small mask itself used in the deposition process of the large substrate is not too small. Thus, a bowing phenomenon may occur due to the self weight of the small mask, and it may be difficult to uniformly maintain the separation distance between the small mask and the large substrate. The non-uniformity of the separation distance between the small mask and the large substrate may distort the pattern of the thin film formed by depositing the deposition substance.

In view of the above, an object of the present invention is to provide a deposition apparatus capable of reducing distortion occurring in a thin film pattern when forming a thin film on a large-sized substrate.

In addition, an object of the present invention is to provide a method for manufacturing a display device using a deposition apparatus capable of reducing distortion occurring in a thin film pattern when forming a thin film on a large substrate.

Technical problems of the present invention are not limited to the above-mentioned technical problems, and technical problems not mentioned or other technical problems may be clearly understood by those skilled in the art through the following description.

A deposition apparatus according to an embodiment of the present invention to achieve the above technical problem includes a first chamber defining therein first and second regions arranged in a first direction, the first pattern mask assembly being disposed inside the first chamber to overlap the first region, a second chamber disposed inside the first chamber and discharging a deposition substance toward the first pattern mask assembly side while moving in a second direction intersecting the first direction, a second pattern mask assembly disposed inside the first chamber and defining therein first and second regions arranged in the first direction in the same manner as the first chamber, the second pattern mask assembly is disposed to overlap the second region inside the second chamber, the second deposition source is disposed inside the second chamber and discharges deposition substances toward the second pattern mask assembly while moving in the second direction, and the baffle plate is disposed between the first pattern mask assembly and the first deposition source corresponding to the second region inside the first chamber and between the second pattern mask assembly and the second deposition source corresponding to the first region inside the second chamber.

The deposition material of the first deposition source and the deposition material of the second deposition source may be the same.

The second deposition source may be configured to discharge the deposition substance after discharging the deposition substance using the first deposition source.

In the first direction, a length of the first pattern mask assembly may be less than a length of the first deposition source.

The first pattern mask assembly may be disposed to be closely attached to a region of the substrate, which overlaps the first region, among the substrates introduced into the first chamber.

The second pattern mask assembly may be disposed to be closely attached to a region of the substrate, which overlaps the second region, among the substrates introduced into the second chamber.

When the first region is plural and the second region is plural in the first chamber, the second region may be disposed between the adjacent first regions.

In the case where the first chamber has a plurality of first regions and the second chamber has a plurality of second regions, the first regions and the second regions may be arranged in a matrix form and alternately arranged in both the first direction and the second direction.

In addition, the deposition apparatus may further include another deposition part corresponding to the deposition part including the first chamber, the first pattern mask assembly, the first deposition source, the second chamber, the second pattern mask assembly, and the second deposition source.

A method of manufacturing a display device according to an embodiment of the present invention for achieving the above technical problem includes the steps of: a first pattern mask assembly disposed in an interior of a first chamber having a first region and a second region defined therein and arranged in a first direction so as to overlap the first region; introducing a substrate defining a first substrate area and a second substrate area into the first chamber and bringing the first substrate area into close contact with the first pattern mask assembly; discharging a deposition substance toward the substrate side while moving a first deposition source disposed inside the first chamber in a second direction intersecting the first direction to form a pattern layer in the first substrate region; disposing a second pattern mask assembly in an interior of a second chamber which is arranged to be spaced apart from the first chamber along the first direction and which has a first region and a second region defined therein and arranged along the first direction in the same manner as the first chamber, the second pattern mask assembly overlapping the second region; introducing the substrate into the second chamber and bringing the second substrate area into close contact with the second pattern mask assembly; and discharging a deposition substance toward the substrate side while moving a second deposition source disposed inside the second chamber in the second direction to form a pattern layer in the second substrate region.

The pattern layer may include at least one of a hole transport layer and a light emitting layer of the light emitting display device.

The step of discharging the deposition substance using the second deposition source may be performed after the step of discharging the deposition substance using the first deposition source.

When there are a plurality of the first regions and a plurality of the second regions in the first chamber, the second regions may be disposed between the adjacent first regions.

When the first chamber has a plurality of first regions and the second chamber has a plurality of second regions, the first regions and the second regions may be arranged in a matrix form and alternately arranged in both the first direction and the second direction.

In addition, the method of manufacturing the display device may further include: and forming a pattern layer on another substrate using another deposition part corresponding to a deposition part including the first chamber, the first pattern mask assembly, the first deposition source, the second chamber, the second pattern mask assembly, and the second deposition source.

Additional embodiment details are included in the detailed description and drawings.

According to the embodiment of the present invention, at least the following effects are obtained.

According to the deposition apparatus of an embodiment of the present invention, it is possible to reduce distortion occurring on a thin film pattern when forming a thin film on a large-sized substrate.

The effects according to the present invention are not limited to the above exemplified ones, and further effects are included in the present specification.

Drawings

Fig. 1 is a system structural view schematically illustrating a deposition apparatus according to an embodiment of the present invention.

Fig. 2 is a plan view schematically illustrating the first deposition chamber of fig. 1.

Fig. 3 is a perspective view illustrating the open mask assembly of fig. 2.

Fig. 4 is a perspective view schematically illustrating an internal structure of the first deposition chamber of fig. 2.

Fig. 5 is a sectional view schematically illustrating an internal structure of the first deposition chamber of fig. 2.

Fig. 6 is a plan view schematically illustrating the third deposition chamber of fig. 1.

Fig. 7 is a perspective view of the first pattern mask assembly of fig. 6.

Fig. 8 is an enlarged view of the portion "a" of fig. 7.

Fig. 9 is a perspective view schematically illustrating an internal structure of the third deposition chamber of fig. 6.

Fig. 10 is a sectional view schematically illustrating an internal structure of the third deposition chamber of fig. 6.

Fig. 11 is a plan view illustrating a process of forming a common layer on a substrate within the first deposition chamber illustrated in fig. 2.

Fig. 12 is a cross-sectional view illustrating an example after forming a common layer on a substrate within the first deposition chamber of fig. 2.

Fig. 13 is a plan view showing a process of forming a pattern layer on a portion of the substrate corresponding to the first region of the first chamber within the first chamber of the third deposition chamber illustrated in fig. 6.

Fig. 14 is a cross-sectional view showing an example after a pattern layer is formed on a portion of the substrate corresponding to the first region of the first chamber within the first chamber of the third deposition chamber illustrated in fig. 6.

Fig. 15 is a plan view illustrating a process of forming a pattern layer on a portion of the substrate corresponding to the second region of the second deposition chamber within the second chamber of the third deposition chamber illustrated in fig. 6.

Fig. 16 is a cross-sectional view showing an example after a pattern layer is formed on a portion of the substrate corresponding to the second region of the second deposition chamber within the second chamber of the third deposition chamber illustrated in fig. 6.

Fig. 17 is a sectional view of a light emitting display device manufactured using a deposition apparatus according to an embodiment of the present invention.

Fig. 18 is a plan view schematically illustrating a third deposition chamber in a deposition apparatus according to another embodiment of the present invention.

Fig. 19 is a plan view illustrating a process of forming a pattern layer on a portion of the substrate corresponding to a first region of the first chamber within the first chamber of the third deposition chamber of fig. 18.

Fig. 20 is a plan view illustrating a process of forming a pattern layer on a portion of the substrate corresponding to a second region of the second chamber within the second chamber of the third deposition chamber of fig. 18.

Fig. 21 is a system structural view schematically illustrating a deposition apparatus according to still another embodiment of the present invention.

Detailed Description

Advantages and features of the present invention and methods of accomplishing the same may be understood by reference to the following detailed description of embodiments taken in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms different from each other, and these embodiments are provided only for the purpose of completeness of disclosure of the present invention and to inform those skilled in the art to which the present invention pertains of the full scope of the present invention, and the present invention is defined only by the scope of the claims.

When an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer or intervening layers or other elements may be present. Like reference numerals refer to like elements throughout the specification.

It should be understood that, although the terms first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one constituent element from other constituent elements. Therefore, it should be clear that the first constituent element mentioned hereinafter may also be referred to as the second constituent element without departing from the technical idea of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

Referring to fig. 1, a deposition apparatus 500 according to an embodiment of the present invention includes a loading part 100, a deposition part 300, and an unloading part 400.

The loading part 100 is configured to load a plurality of substrates S before deposition of a deposition substance is performed. Any one of the plurality of substrates S stacked on the loading part 100 may be supported by a carrier C such as an electrostatic chuck and moved to the deposition part 300 via a moving space MS. The carrier C is movable along a first direction X of fig. 1 and a second direction Y intersecting the first direction X. The substrate S may be a substrate for a display device, and may be applied to a large-area substrate such as mother glass (mother glass) defined with a plurality of substrate regions for forming a plurality of display devices. Although eight quadrangles indicated by dotted lines on the substrate S in fig. 1 indicate eight substrate regions where a display device is to be formed, the substrate S is not limited by such a number.

The deposition part 300 is configured to be capable of performing a process of depositing a deposition substance onto the substrate S. The deposition part 300 includes at least one deposition chamber, and for example, may include a first deposition chamber 310, a second deposition chamber 320, a third deposition chamber 330, a fourth deposition chamber 340, a fifth deposition chamber 350, a sixth deposition chamber 360, and a seventh deposition chamber 370 arranged along the first direction X. The first, sixth, and

seventh deposition chambers

310, 360, and 370 may be deposition chambers for forming a common layer, and the second, third, fourth, and

fifth deposition chambers

320, 330, 340, and 350 may be deposition chambers for forming a pattern layer, wherein the common layer is a thin film formed by depositing a deposition substance onto the substrate S without an additional pattern structure, and the pattern layer is a thin film formed by depositing a deposition substance onto the substrate S with a specific pattern. However, the present invention is not limited thereto. The deposition part 300 will be described in detail below.

The unloading section 400 is configured to separate the substrate S having passed through the deposition section 300 from the carrier C and to stack the substrate S separated from the carrier C. The substrate S stacked in the unloading section 400 may be in a standby state for performing other processes.

Next, the deposition part 300 will be described in detail by taking the first deposition chamber 310 and the third deposition chamber 330 as examples.

Fig. 2 is a plan view schematically illustrating the first deposition chamber of fig. 1, fig. 3 is a perspective view illustrating the open mask assembly of fig. 2, fig. 4 is a perspective view schematically illustrating an internal structure of the first deposition chamber of fig. 2, and fig. 5 is a sectional view schematically illustrating the internal structure of the first deposition chamber of fig. 2.

Referring to fig. 2 to 5, the first deposition chamber 310 provides a space for depositing a deposition substance onto the substrate S to form a common layer. The first deposition chamber 310 may maintain a vacuum state while depositing deposition substances onto the substrate S. The interior of the first deposition chamber 310 may be disposed with the open mask assembly OMA and the deposition source 312.

The open mask assembly OMA, which is a member closely attached to the substrate S introduced into the interior of the first deposition chamber 310 using the carrier C, may include an open mask OM and a frame FR. The open mask OM may be formed in a ring shape defining an opening corresponding to all of a plurality of substrate regions where a plurality of display devices are to be formed in the substrate S. The frame FR as a member supporting the open mask OM may have a shape corresponding to the open mask OM. The close contact of the open mask assembly OMA with the substrate S may be achieved by combining the carrier C with the frame FR in a state where the substrate S is arranged over the open mask OM. The coupling of the carrier C and the frame FR may be achieved by a physical method using bolts and nuts, a method using magnetism, or the like.

Such an open mask assembly OMA including the open mask OM and the frame FR can prevent deposition substances from leaking to unnecessary areas when forming a common layer of an unpatterned structure on the substrate S. In addition, a mask stage ST1 supporting the open mask assembly OMA may be disposed under the open mask assembly OMA.

The deposition source 312, which is a member that discharges the deposition substance 317 toward the substrate S side against which the open mask assembly OMA is in close contact, includes a crucible 315 filled with the deposition substance 317 inside, a heater 316 arranged to cover the crucible 315 and heat the crucible 315 to vaporize the deposition substance 317, and a nozzle portion 314 arranged above the crucible 315 and having a deposition source nozzle 318 toward the substrate S side.

Such a deposition source 312 is capable of discharging the vaporized deposition substance to the substrate S side while moving in the second direction Y under the substrate S in close contact with the open mask assembly OMA. Thereby, a common layer having an unpatterned structure can be formed over the entire substrate S. For example, in the case where the substrate S is a substrate for a light-emitting display device, the hole injection layer (30 of fig. 17) may be formed on the entire surface of the pixel defining film (20 of fig. 17) independently of the pixel, wherein the pixel defining film is formed on the substrate S.

Fig. 6 is a plan view schematically illustrating the third deposition chamber of fig. 1, fig. 7 is a perspective view of the first pattern mask assembly of fig. 6, fig. 8 is an enlarged view of a portion "a" of fig. 7, fig. 9 is a perspective view schematically illustrating an internal structure of the third deposition chamber of fig. 6, and fig. 10 is a sectional view schematically illustrating an internal structure of the third deposition chamber of fig. 6.

Referring to fig. 6 to 10, the third deposition chamber 330 provides a space for depositing a deposition substance onto the substrate S to form a pattern layer. The third deposition chamber 330 may maintain a vacuum state while depositing deposition substances onto the substrate S. The third deposition chamber 330 may include a first chamber 331 and a second chamber 332. In addition, the third deposition chamber 330 may include a third chamber 333.

The first chamber 331 provides a space for depositing a deposition substance onto at least one of substrate areas S1 to S8 of the substrate S on which a plurality of display devices are to be formed to form a pattern layer. For this, a case where the first chamber 331 includes the first area DA1 and the second area DA2 is illustrated in fig. 6.

The first and second areas DA1 and DA2 may be arranged along a direction (i.e., the first direction X) intersecting a moving direction of the first deposition source 335, which will be described later. The first area DA1 may be an area overlapping with substrate areas S1, S2, S5, S6 where deposition substances are to be deposited among the substrates S introduced into the first chamber 331, and the second area DA2 may be an area overlapping with substrate areas S3, S4, S7, S8 where deposition substances are not to be deposited among the substrates S introduced into the first chamber 331. Here, in the case where the first region DA1 is plural and the second region DA2 is plural, the second region DA2 may be arranged to be between two first regions DA 1.

The first chamber 331 may maintain a vacuum state while depositing the deposition substance 335c onto the substrate S. The interior of the first chamber 331 may be arranged with a first pattern mask assembly PMA1 and a deposition source 335.

The first pattern mask assembly PMA1 is arranged at the first area DA1 of the first chamber 331 and is proximate to a substrate area S1, S2, S5, S6 overlapping the first area DA1 of the first chamber 331, among the substrates S introduced into the interior of the first chamber 331 with the carrier C. The first pattern mask assembly PMA1 may comprise a first pattern mask PM1 and a first frame FR 1.

The first pattern mask PM1 may be configured to include a plurality of metal plates (e.g., a plurality of stripe-shaped bodies) including deposition openings SP corresponding to pixels located in the substrate regions S1, S2, S5, S6 overlapping the first region DA1 of the first chamber 331 in the substrate S. The deposition openings SP may be arranged to correspond to red pixels R, on which a red light emitting layer is to be formed, to form a pattern layer (e.g., a red light emitting layer) in substrate regions S1, S2, S5, S6 overlapping the first region DA1 of the first chamber 331 in the substrate S.

The first frame FR1, which is a member supporting the first pattern mask PM1, may have a frame opening OP exposing the deposition opening SP of the first pattern mask PM 1. When two substrate regions S1, S2 of the substrate S overlapping one first region DA1 of the first chamber 331 are present, the frame opening OP of the first frame FR1 may be present in two, and at this time, the first frame FR1 may include an edge portion T having a ring shape and a dividing portion D connecting mutually opposite sides of the edge portion T to define the two openings OP. The close contact of the first pattern mask assembly PMA1 and the substrate S may be achieved by bonding the carrier C to the first frame FR1 in a state where the substrate S is arranged above the first pattern mask PM 1. The coupling of the carrier C with the first frame FR1 may be achieved by a physical method using bolts and nuts, or a method using magnetism, or the like.

Such a first pattern mask assembly PMA1 including the first pattern mask PM1 and the first frame FR1 enables a pattern layer to be formed at a specific portion of the substrate regions S1, S2, S5, S6 overlapping the first region DA1 of the first chamber 331 in the substrate S, for example, a red light emitting layer is formed at a red pixel R in a light emitting display device, while discharging deposition substances toward the substrate S side through the first deposition source 335. In addition, in the first direction X, the length of the first pattern mask assembly PMA1 may be less than the length of the first deposition source 335. In several embodiments, the length of the first pattern mask assembly PMA1 may also be larger than the length of the first deposition source 335 in the first direction X.

The first deposition source 335, which is a means for discharging the deposition substance 335c toward the substrate S side in close contact with the first pattern mask assembly PMA1, includes a crucible 335a filled with the deposition substance 335c inside, a heater 335b arranged to coat the crucible 335a and heat the crucible 335a to vaporize the deposition substance 335c, and a nozzle portion 335d arranged above the crucible 335a and having the deposition source nozzle 335e toward the substrate S side.

Such a first deposition source 335 is capable of discharging the vaporized deposition substance 335c toward the substrate S side while moving in the second direction Y under the substrate S in close contact with the first pattern mask assembly PMA 1. Thereby, it is possible to form a pattern layer at a specific portion of the substrate regions S1, S2, S5, S6 overlapping the first region DA1 of the first chamber 331 in the substrate S. For example, the red light emitting layer (50 of fig. 17) may be formed in the opening portion 21 corresponding to the red pixel among the opening portions 21 of the pixel defining film (20 of fig. 17) formed on the substrate 5 of the light emitting display device.

In addition, a baffle 337 may be disposed in the second area DA2 of the first chamber 331 to prevent deposition of the deposition substance 335c into substrate areas S3, S4, S7, S8 of the substrates S overlapping the second area DA2 of the first chamber 331. The form of the baffle 337 is not limited to that illustrated in fig. 9.

The second chamber 332 provides a space for depositing a deposition substance into the remaining substrate regions S3, S4, S7, S8 except the substrate regions S1, S2, S5, S6 where the pattern layer is formed in the first chamber 331, among the substrate regions S1 to S8 where a plurality of display devices are to be formed in the substrate S, to form the pattern layer. For this, a case where the second chamber 332 includes the first area DA1 and the second area DA2 is illustrated in fig. 6. The first and second regions DA1 and DA2 of the second chamber 332 may be differentiated in the same manner as the first and second regions DA1 and DA2 of the first chamber 331.

That is, the first and second areas DA1 and DA2 of the second chamber 332 can be aligned in a direction (i.e., the first direction X) intersecting a moving direction of the second deposition source 336 to be described later. The first area DA1 of the second chamber 332 may be an area overlapping with substrate areas S1, S2, S5, S6 where deposition substances are not deposited among the substrates S introduced into the second chamber 332, and the second area DA2 may be an area overlapping with substrate areas S3, S4, S7, S8 where deposition substances are to be deposited among the substrates S introduced into the second chamber 332. Here, in the case where the first region DA1 is plural and the second region DA2 is plural, the second region DA2 may be arranged to be between two first regions DA 1.

The second chamber 332 may maintain a vacuum state while depositing a deposition substance onto the substrate S. The interior of the second chamber 332 may have the second pattern mask assembly PMA2 and the deposition source 336 disposed therein.

The second pattern mask assembly PMA2 is configured similarly to the first pattern mask assembly PMA 1. However, the second pattern mask assembly PMA2 is disposed in the second region DA2 of the second chamber 332 and is in close contact with the substrate regions S3, S4, S7, S8 overlapping with the second region DA2 of the second chamber 332 among the substrates S introduced into the interior of the second chamber 332 with the carrier C.

Such a second pattern mask assembly PMA2 may cause a pattern layer to be formed at a specific portion of the substrate regions S3, S4, S7, S8 overlapping the second region DA2 of the second chamber 332 in the substrate S, for example, at a red pixel in a light emitting display device, when the deposition substance is discharged toward the substrate S side by the second deposition source 336.

The second deposition source 336 is configured identically to the first deposition source 335. However, the second deposition source 336 may be configured to discharge the deposition substance 335c after discharging the deposition substance using the first deposition source 335. The deposition substance of the second deposition source 336 may be the same as the deposition substance 335c of the first deposition source 335. The second deposition source 336 is capable of discharging the vaporized deposition substance toward the substrate S side while moving in the second direction Y under the substrate S in close proximity to the second pattern mask assembly PMA 2. Thereby, it is possible to form a pattern layer at a specific portion of the substrate regions S3, S4, S7, S8 overlapping the second region DA2 of the second chamber 332 in the substrate S. For example, a red light-emitting layer (50 of fig. 17) may be formed in an opening portion 21 corresponding to a red pixel among opening portions 21 of a pixel defining film (20 of fig. 17) formed on a substrate S4 of a light-emitting display device. In addition, in the first direction X, the length of the second pattern mask assembly PMA2 may be less than the length of the second deposition source 336. In several embodiments, the length of the second pattern mask assembly PMA2 may also be larger than the length of the second deposition source 336 in the first direction X.

A baffle (337 of fig. 9) may be disposed in the first area DA1 of the second chamber 332 to prevent deposition of deposition species into substrate areas S1, S2, S5, S6 of the substrates S that overlap the first area DA1 of the second chamber 332.

The third chamber 333 is configured to be able to provide an exchange mask assembly SPMA having the same size and pattern as the first pattern mask assembly PMA1 or the second pattern mask assembly PMA2 when replacement of the first pattern mask assembly PMA1 or the second pattern mask assembly PMA2 is required.

As described above, without affecting the arrangement of the first and second pattern mask assemblies PMA1 and PMA2 having a size smaller than that of the substrate S, and in a state where the first pattern mask assembly PMA1 and the substrate S are closely attached and the second pattern mask assembly PMA2 and the substrate S are closely attached, pattern layers arranged in substrate regions S1 to S8, which are defined in the substrate S and in which a plurality of display devices are to be formed, are formed by the first and

second chambers

331 and 332 using deposition of a deposition substance, and therefore, it is possible to reduce a situation in which a pattern layer formed on the substrate S is distorted due to a bending phenomenon caused by the self weight of a mask in the FMM mode, and it is possible to reduce a situation in which a pattern layer formed on the substrate S is distorted due to a phenomenon in which a separation distance between a mask and the substrate S is not uniform in the SMS mode.

Next, a method of manufacturing a display device using the deposition apparatus 500 according to an embodiment of the present invention will be described.

Fig. 11 is a plan view showing a process of forming a common layer on a substrate within a first deposition chamber illustrated in fig. 2, fig. 12 is a sectional view showing an example after forming a common layer on a substrate within the first deposition chamber of fig. 2, fig. 13 is a plan view showing a process of forming a pattern layer on a portion of the substrate corresponding to a first region of the first chamber within a first chamber of a third deposition chamber illustrated in fig. 6, fig. 14 is a sectional view showing an example after forming a pattern layer on a portion of the substrate corresponding to a first region of the first chamber within a first chamber of the third deposition chamber illustrated in fig. 6, fig. 15 is a plan view showing a process of forming a pattern layer on a portion of the substrate corresponding to a second region of the second deposition chamber within a second chamber of the third deposition chamber illustrated in fig. 6, and fig. 16 is a plan view showing a process of forming a pattern layer on a portion of the substrate corresponding to a second region of the second deposition chamber within a second chamber of the third deposition chamber illustrated in fig. 6 And a cross-sectional view of the example after the pattern layer is formed on a portion corresponding to the second region.

A method for manufacturing a light-emitting display device will be described as an example. In addition, a process of forming the common layer (for example, the hole injection layer 30) and the pattern layer (for example, the light emitting layer 50) in the method of manufacturing the light emitting display device will be described.

First, referring to fig. 11, a substrate S supported by a carrier C is introduced into the interior of the first deposition chamber 310 and is brought into close contact with the open mask assembly OMA. Subsequently, the vaporized deposition substance is discharged toward the substrate S side while moving the deposition source 312 in the second direction Y.

At this time, as shown in fig. 12, the hole injection layer 30 is formed on the entire face of the pixel defining film 20 regardless of the pixel, wherein the pixel defining film 20 is formed on the substrate (S of fig. 11) including the first electrode 10 formed in units of each pixel to include the opening portion 21 exposing the first electrode 10. Only the substrate region S2 and the substrate region S4 in the substrate (S of fig. 11) are illustrated in fig. 12. The substrate regions S1 to S8 of the substrate (S of fig. 11) may be individualized in a subsequent cutting process, and the substrate region S2 may become a substrate of one light emitting display device and the substrate region S4 may become a substrate of another light emitting display device.

Next, referring to fig. 13, the substrate S supported by the carrier (C of fig. 11) is introduced into the interior of the first chamber 331 of the third deposition chamber 330 and is brought into close proximity with the first pattern mask assembly PMA1 disposed in the first region (DA 1 of fig. 6) of the first chamber 331. Subsequently, the vaporized deposition substance 335c is discharged toward the substrate S side while moving the first deposition source 335 in the second direction Y.

At this time, as shown in fig. 14, the hole transport layer 40 is formed inside the opening portion 21 of the pixel defining film 20 above the hole injection layer 30 in the substrate region (e.g., S2) in close contact with the first pattern mask assembly PMA1 in the substrate (S of fig. 13), and the light emitting layer 50 is formed on the hole transport layer 40. The light emitting layer 50 illustrated in fig. 14 may be a red light emitting layer disposed at a red pixel.

Next, referring to fig. 15, the substrate S supported by the carrier (C of fig. 11) is introduced into the interior of the second chamber 332 of the third deposition chamber 330 and is brought into close proximity with the second pattern mask assembly PMA2 disposed in the second region (DA 2 of fig. 6) of the second chamber 332. Subsequently, the vaporized deposition substance 335c is discharged toward the substrate S side while moving the second deposition source 336 in the second direction Y.

At this time, as shown in fig. 16, the light emitting layer 50 is formed on the hole transport layer 40, wherein the hole transport layer 40 is formed inside the opening portion 21 of the pixel defining film 20 above the hole injection layer 30 in the substrate region (e.g., S4) in close contact with the second pattern mask assembly PMA2 in the substrate (S of fig. 15). The light emitting layer 50 illustrated in fig. 16 may be a red light emitting layer disposed at a red pixel.

Although not shown, the hole transport layer 40 is formed before the light-emitting layer 50 is formed in the same manner as the formation method of the light-emitting layer 50. In addition, the light emitting layer 50 has been described as the red light emitting layer in the foregoing, but may be a green light emitting layer disposed at a green pixel and a blue light emitting layer disposed at a blue pixel. Each of the red light emitting layer, the green light emitting layer, and the blue light emitting layer may be formed in each deposition chamber. In addition, although not shown, after the light emitting layer 50 is formed, an electron transport layer (60 of fig. 17), an electron injection layer (70 of fig. 17), and a second electrode 80 may be formed in the same manner as the formation method of the hole injection layer 30.

Referring to fig. 17, a light emitting display device manufactured using the deposition apparatus 500 according to an embodiment of the present invention includes: a substrate 5, a first electrode 10, a pixel defining film 20, a hole injection layer 30, a hole transport layer 40, a light emitting layer 50, an electron transport layer 60, an electron injection layer 70, and a second electrode 80.

The substrate 5 may be formed of a transparent insulating material. For example, the substrate 5 may be formed of glass, quartz, ceramic, plastic, or the like. The substrate 5 may be a flat plate shape. According to some embodiments, the substrate 5 may be formed of a material that can be easily bent by an external force. The substrate 5 is capable of supporting other components disposed on the substrate 5. Although not illustrated, the substrate 5 may include a plurality of thin film transistors. The drain electrode of at least a part of the plurality of thin film transistors can be electrically connected to the first electrode 10.

The first electrode 10 may be disposed on the substrate 5 in units of respective pixels. The first electrode 10 may be an anode that supplies holes to the light emitting layer 50 or a cathode that supplies electrons, receiving a signal applied to a drain electrode of the thin film transistor.

The first electrode 10 may be used as a transparent electrode, a reflective electrode, or a semi-transmissive electrode. When the first electrode 10 is used as a transparent electrode, the first electrode 10 may be formed of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Zinc Oxide (ZnO), or In₂O₃And (4) forming. When the first electrode 10 uses a reflective electrode, the first electrode 10 may be formed by forming ITO, IZO, ZnO, or In on a reflective film formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, a compound thereof, or the like, followed by forming the same thereon₂O₃To construct. When the first electrode 10 is used as the semi-transmissive electrode, the first electrode 10 may be formed by forming ITO, IZO, ZnO, or In on a reflective film formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, a compound thereof, or the like, In a thin thickness, and then forming the same thereon₂O₃To construct. The first electrode 10 may be formed by a photolithography method, but is not limited thereto.

The pixel defining film 20 is disposed on the substrate 5 and has an opening portion 21 exposing the first electrode 10, and divides each pixel on the substrate 5. The pixel defining film 20 may be made of an insulating substance. For example, the pixel defining film 20 may be configured to include at least one organic substance selected from Benzocyclobutene (BCB), Polyimide (PI), Polyamide (PA), acrylic resin, phenolic resin, and the like. As another example, the pixel defining film 20 may also be configured to include an inorganic substance such as silicon nitride or the like. The pixel defining film 20 may be formed by a photolithography process, but is not limited thereto.

The hole injection layer 30 is formed on the first electrode 10 exposed through the opening portion 21 of the pixel defining film 20, and may also be formed to cover the entirety of the pixel defining film 20. The hole injection layer 30 serves as a buffer layer that lowers a barrier between the first electrode 10 and the hole transport layer 40, and functions to allow holes supplied from the first electrode 10 to be easily injected into the hole transport layer 40. The hole injection layer 30 may be composed of an organic compound such as 4,4',4 ″ -tris (3-methylphenylphenylamino) triphenylamine (MTDATA (4,4',4 ″ -tris (3-methylphenylphenylamino)) copper phthalocyanine (cupc (copper phthalocyanine)), or poly (3, 4-ethylenedioxythiophene/polystyrene sulfonate) (PEDOT/PSS (poly (3,4-ethylenedioxythiophene, polystyrene sulfonate)), but is not limited thereto.

The hole transport layer 40 is formed on the hole injection layer 30. The hole transport layer 40 functions to transfer holes provided through the hole injection layer 30 to the light emitting layer 50. Such a hole transport layer 40 may be composed of an organic compound such as N, N '-diphenyl-N, N' -bis (3-methylphenyl) -1,1 '-biphenyl-4, 4' -diamine (TPD (N, N '-diphenyl-N, N' -bis (3-methylphenenyl) -1,1'-bi-phenyl-4,4' -diamine)) or N, N '-bis (naphthalene-1-yl) -N, N' -diphenyl-benzidine (NPB (N, N '-di (naphthalene-1-yl) -N, N' -diphenyl-benzidine)), but is not limited thereto.

The light emitting layer 50 is formed on the hole transport layer 40. The light emitting layer 50 emits light by combining holes supplied from the first electrode 10 with electrons supplied from the second electrode 80. In more detail, when holes and electrons are supplied to the light emitting layer 50, the holes combine with the electrons to generate excitons, and such excitons emit light while changing from an excited state to a ground state. Such a light emitting layer 50 may include a red light emitting layer emitting red, a green light emitting layer emitting green, and a blue light emitting layer emitting blue.

The red light emitting layer may be formed to include one kind of red light emitting substance, or include a host and a red dopant. For the host of the red light-emitting layer, for example, tris (8-hydroxyquinoline) aluminum (Alq) can be used₃(tris (8-hydroxyquinonylato) aluminum)), 4'-N, N' -dicarbazole-biphenyl (CBP (4,4'-N, N' -dicarbazole-biphenol)), poly (N-vinylcarbazole) (PVK (poly (N-vinylcarbazole)), 9, 10-bis (naphthalen-2-yl) anthracene (AND (9,10-Di (naphtyl-2-yl) anthracene)), 1,3,5-tris (N-phenylbenzimidazol-2-yl) benzene (TPBI (1,3,5-tris (N-phenylbenzimidazole-2-yl) benzene)), 3-tert-butyl-9, 10-bis (naphthalen-2-yl) anthracene (TBADN (3-tert-butyl-9, 10-bis (naphthalene-2-yl)) anthracene (TBADN (3-tert-butyl-9, 10-bis (naphthalene-2-yl) anthracene (PBI (PBO-2-yl)) Distyrylarylene (DSA), etc., but not limited theretoHere, the process is repeated. In addition, the red dopant can utilize PtOEP, Ir (piq)₃、Btp₂Ir (acac), etc., but are not limited thereto.

The green light emitting layer may be formed to include a green light emitting substance, or include a host and a green dopant. In addition, the green dopant may utilize Ir (ppy)₃、Ir(ppy)₂(acac)、Ir(mpyp)₃Etc., but are not limited thereto.

The blue light emitting layer may be formed to include one kind of blue light emitting substance, or include a host and a blue dopant. The host of the red light emitting layer may be used as the host of the blue light emitting layer. In addition, the blue dopant can utilize F₂Irpic、(F₂ppy)₂Ir(tmd)、Ir(dfppz)₃And trifluorofluorene (ter-fluoroene), 4'-bis (4-di-p-tolylaminostyryl) biphenyl (DPAVBi (4,4' -bis (4-di-p-tolylaminostyryl) biphenyl)), 2,5,8, 11-tetra-tert-butylphthalene (TBPe (2,5,8, 11-tetra-tert-butyl-perylene)), and the like, but is not limited thereto.

The electron transport layer 60 is formed on the light emitting layer 50, and functions to transport electrons supplied from the second electrode 80 to the light emitting layer 50. Such an electron transport layer 60 can use an organic compound such as 4,7-diphenyl-1,10-phenanthroline (Bphen (4,7-diphenyl-1,10-phenanthroline)), bis (2-methyl-8-quinolinolato) 4-phenylphenolate aluminum (III) (BAlq (aluminum (III)) bis (2-methyl-8-quinolinolato) 4-phenylphenolate), tris (8-quinolinolato) aluminum (Alq)₃(Tris (8-quinolinolato) aluminum)), beryllium bis (10-hydroxybenzoquinoline) (Bebq)₂(beryllimubis (benzoquinolin-10-olate)), 1,3,5-tris (N-phenylbenzimidazol-2-yl) benzene (TPBI (1,3,5-tris (N-phenylbenzimidazol-2-yl) benzene)), and the like, but is not limited thereto.

The electron injection layer 70 is formed on the electron transport layer 60, and functions as a buffer layer that lowers a barrier between the electron transport layer 60 and the second electrode 80, which functions to allow electrons supplied from the second electrode 80 to be easily injected into the electron transport layer 60. Such an electron injection layer 70 may be formed of, for example, LiF or CsF, but is not limited thereto.

The second electrode 80 may be disposed above the electron injection layer 70. The second electrode 80 may be formed of the same material as that of the first electrode 10, but is not necessarily limited thereto. According to several embodiments, the second electrode 80 may be a common electrode disposed on a plurality of pixels included in the light emitting display device. According to several embodiments, the second electrode 80 may also be disposed on the entire surface above the electron injection layer 70 and above the pixel defining film 20. The light emission of the light emitting layer 50 may be controlled by a current flowing between the first electrode 10 and the second electrode 80.

Next, a deposition apparatus according to another embodiment of the present invention will be described.

Fig. 18 is a plan view schematically illustrating a third deposition chamber in a deposition apparatus according to another embodiment of the present invention, fig. 19 is a plan view illustrating a process of forming a pattern layer on a portion of a substrate corresponding to a first region of the first chamber within a first chamber of the third deposition chamber of fig. 18, and fig. 20 is a plan view illustrating a process of forming a pattern layer on a portion of a substrate corresponding to a second region of the second chamber within a second chamber of the third deposition chamber of fig. 18.

The deposition apparatus according to another embodiment of the present invention is identical to the deposition apparatus 500 of fig. 1 except that the third deposition chamber 330a is different. Thus, in the deposition apparatus according to another embodiment of the present invention, only the third deposition chamber 330a will be described in detail.

Referring to fig. 18 to 20, the third deposition chamber 330a includes a first chamber 331a, a second chamber 332a, and a third chamber 333a, and is similar to the third deposition chamber 330 of fig. 6. However, the arrangement of the first and second regions DA11 and DA12 of the first and

second chambers

331a and 332a, respectively, is different from the arrangement of the first and second regions DA1 and DA2 of the first and

second chambers

331 and 332, respectively, of fig. 6.

Specifically, the first and second areas DA11 and DA12 of the first chamber 331a are arranged in a matrix form along the first and second directions X and Y, and are alternately arranged in both the first and second directions X and Y.

The first area DA11 of the first chamber 331a may be an area overlapping with substrate areas S2, S3, S6, S7 where deposition substances are to be deposited among the substrates S introduced into the first chamber 331a, and the second area DA12 may be an area overlapping with substrate areas S1, S4, S5, S8 where deposition substances are not to be deposited among the substrates S introduced into the first chamber 331 a.

The first and second regions DA11 and DA12 of the second chamber 332a may be differentiated in the same manner as the first and second regions DA11 and DA12 of the first chamber 331 a.

However, the first area DA11 of the second chamber 332a may be an area overlapping with the substrate areas S2, S3, S6, S7 where the deposition substance is not deposited among the substrates S introduced into the second chamber 332a, and the second area DA12 may be an area overlapping with the substrate areas S1, S4, S5, S8 where the deposition substance is to be deposited among the substrates S introduced into the second chamber 332 a.

Depending on the configuration of the first and second chambers 331a and 332b, the arrangement of the first pattern mask assembly PMA11 arranged inside the first chamber 331a and the arrangement of the second pattern mask assembly PMA12 arranged inside the second chamber 332a may be different.

The first pattern mask assembly PMA11 is disposed in the first area DA11 of the first chamber 331a and is proximate to the substrate areas S2, S3, S6, S7 overlapping with the first area DA11 of the first chamber 331a among the substrates S introduced into the interior of the first chamber 331a with the carrier (C of fig. 10). The first pattern mask assembly PMA11 is similar to the first pattern mask assembly PMA1 of fig. 7. However, the first pattern mask assembly PMA11 is in close proximity to one substrate area and therefore may be smaller than the size of the first pattern mask assembly PMA1 of fig. 7. At this time, the frame of the first pattern mask assembly PMA11 is different from the frame of the first pattern mask assembly PMA1 of fig. 7 and does not include a division portion.

Such a first pattern mask assembly PMA11 enables a pattern layer to be formed at a specific portion of the substrate regions S2, S3, S6, S7 overlapping the first region DA11 of the first chamber 331a in the substrate S, for example, a red light emitting layer is formed at a red pixel in a light emitting display device, while discharging deposition substances to the substrate S side through the first deposition source 335.

The second pattern mask assembly PMA12 is configured similarly to the first pattern mask assembly PMA 11. However, the second mask assembly PMA12 is arranged in the second area DA12 of the second chamber 332a and is brought into close proximity with the substrate areas S1, S4, S5, S8 overlapping with the second area DA12 of the second chamber 332a among the substrates S introduced into the interior of the second chamber 332a by the carrier (C of fig. 10).

Such a second pattern mask assembly PMA12 enables a pattern layer to be formed at a specific portion of the substrate regions S1, S4, S5, S8 overlapping the second region DA12 of the second chamber 332a in the substrate S, for example, at red pixels in a light emitting display device, while discharging deposition substances to the substrate S side through the second deposition source 336.

Third chamber 333a is similar to third chamber 333 of fig. 6. However, the third chamber 333a is internally provided with an exchange mask assembly SPMA1, wherein the exchange mask assembly SPMA1 has the same size and pattern as the first pattern mask assembly PMA11 or the second pattern mask assembly PMA 12.

As described above, without affecting the arrangement of the first and second pattern mask assemblies PMA11 and PMA12 having a size smaller than the substrate S, and in a state where the first pattern mask assembly PMA11 and the substrate S are closely attached and the second pattern mask assembly PMA12 and the substrate S are closely attached, the pattern layers arranged in the substrate regions S1 to S8, defined in the substrate S, in which a plurality of display devices are to be formed are formed by the first and

second chambers

331a and 332a using deposition of deposition substances, and therefore, it is possible to reduce a case where the pattern layer formed on the substrate S is distorted due to a bending phenomenon caused by the self weight of the mask in the FMM mode, and it is possible to reduce a case where the pattern layer formed on the substrate S is distorted due to a phenomenon of a separation distance between the mask and the substrate S in the SMS mode.

Next, a deposition apparatus 700 according to still another embodiment of the present invention will be described.

The deposition apparatus 700 according to still another embodiment of the present invention has the same structure as that of the deposition apparatus 500 of fig. 1 except that it further includes a second deposition part 600 as another deposition part. Thus, in the deposition apparatus 700 according to still another embodiment of the present invention, only the second deposition portion 600 will be described in detail.

Referring to fig. 21, a deposition apparatus 700 according to another embodiment of the present invention includes a loading part 100, a first deposition part 300, an unloading part 400, and a second deposition part 600.

Since the loading section 100 and the unloading section 400 have been described above, a repetitive description is omitted. The first deposition part 300 is different from the deposition part 300 of fig. 1 only in terms, and thus a repetitive description is omitted.

The second deposition part 600 is configured corresponding to the first deposition part 300 to enable a process of depositing a deposition substance on another substrate other than the substrate S. That is, the deposition part 600 includes at least one deposition chamber, and for example, may include a first deposition chamber 610, a second deposition chamber 620, a third deposition chamber 630, a fourth deposition chamber 640, a fifth deposition chamber 650, a sixth deposition chamber 660, and a seventh deposition chamber 670, which are arranged along the first direction X.

The first, second, third, fourth, fifth, sixth, and

seventh deposition chambers

610, 620, 630, 640, 650, 660, and 670 of the second deposition portion 600 may be opposite to the first, second, third, fourth, fifth, sixth, and

seventh deposition chambers

310, 320, 330, 340, 350, 360, and 370 of the first deposition portion 300 across the moving space MS.

The deposition apparatus 700 as described above includes two deposition parts 300 and 600 capable of performing deposition processes on a plurality of substrates at the same time. Thereby, the yield of the display device manufactured using the deposition apparatus 700 may be improved.

Although the embodiments of the present invention have been described above with reference to the drawings, it will be understood by those skilled in the art to which the present invention pertains that the embodiments can be implemented in other specific forms without changing the technical idea or essential features of the present invention. It is therefore to be understood that the above described embodiments are intended in all respects to be illustrative rather than restrictive.

Description of the reference numerals

100: loading unit 300, 600: deposition part

310:

first deposition chamber

330, 330 a: third deposition chamber

331: first chamber 332: second chamber

400: unloading section 500, 700: deposition apparatus

Claims

1. A deposition apparatus, comprising:

a first chamber having a first region and a second region defined therein and arranged in a first direction;

a first pattern mask assembly disposed to overlap the first region inside the first chamber;

a first deposition source disposed inside the first chamber and discharging deposition substances toward the first pattern mask assembly side while moving in a second direction intersecting the first direction;

a second chamber arranged to be spaced apart from the first chamber along the first direction and defining a first region and a second region arranged along the first direction inside the second chamber in the same manner as the first chamber;

a second pattern mask assembly disposed inside the second chamber to overlap the second region;

a second deposition source disposed inside the second chamber and discharging deposition substances toward the second pattern mask assembly side while moving in the second direction; and

a shutter disposed between the first pattern mask assembly and the first deposition source corresponding to the second region inside the first chamber, and disposed between the second pattern mask assembly and the second deposition source corresponding to the first region inside the second chamber.

2. The deposition apparatus of claim 1,

the deposition material of the first deposition source and the deposition material of the second deposition source are the same,

the second deposition source is configured to discharge the deposition substance after discharging the deposition substance using the first deposition source.

3. The deposition apparatus of claim 1,

in the first direction, a length of the first pattern mask assembly is less than a length of the first deposition source.

4. The deposition apparatus of claim 1,

the first pattern mask assembly is configured to be in close proximity to a substrate region overlapping the first region among the substrates introduced into the interior of the first chamber,

the second pattern mask assembly is configured to be in close proximity to a region of the substrate that overlaps the second region in the substrate introduced into the interior of the second chamber.

5. The deposition apparatus of claim 1,

when the first region is plural and the second region is plural inside the first chamber, the second region is disposed between the adjacent first regions.

6. The deposition apparatus of claim 1,

when the first region is plural and the second region is plural inside the first chamber, the first region and the second region are arranged in a matrix form and alternately arranged in both the first direction and the second direction.

7. The deposition apparatus of claim 1, further comprising:

another deposition part corresponding to the deposition part including the first chamber, the first pattern mask assembly, the first deposition source, the second chamber, the second pattern mask assembly, and the second deposition source.

8. A method of manufacturing a display device, comprising the steps of:

a first pattern mask assembly disposed to overlap a first region and defining a first chamber and a second chamber inside the first chamber;

introducing a substrate defining a first substrate area and a second substrate area into the interior of the first chamber and bringing the first substrate area into close proximity with the first pattern mask assembly;

discharging deposition substances toward the substrate side while moving a first deposition source disposed inside the first chamber in a second direction intersecting the first direction to form a pattern layer at the first substrate region;

disposing a second pattern mask assembly overlapping the second region inside a second chamber arranged to be spaced apart from the first chamber along the first direction and having a first region and a second region arranged along the first direction defined therein in the same manner as the first chamber;

introducing the substrate into the interior of the second chamber and placing the second substrate area against the second pattern mask assembly; and

discharging deposition substances toward the substrate side while moving a second deposition source disposed inside the second chamber along the second direction to form a pattern layer at the second substrate region.

9. The method for manufacturing a display device according to claim 8,

the pattern layer includes at least one of a hole transport layer and a light emitting layer of a light emitting display device.

10. The method for manufacturing a display device according to claim 8,

the step of discharging the deposition substance using the second deposition source is performed after the step of discharging the deposition substance using the first deposition source.