CN106334993A - Simulating device for chemical machine grinding technology - Google Patents
Simulating device for chemical machine grinding technology Download PDFInfo
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- CN106334993A CN106334993A CN201610924425.0A CN201610924425A CN106334993A CN 106334993 A CN106334993 A CN 106334993A CN 201610924425 A CN201610924425 A CN 201610924425A CN 106334993 A CN106334993 A CN 106334993A
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- live width
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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Abstract
The invention provides an establishing method of a simulating device for the chemical machine grinding technology. The establishing method comprises the steps that firstly, according to the design rule of a technology platform, a line width logarithm-density matrix table is designed and includes the line width logarithm/density value range and line width logarithm/density coordinate sequence foot path selection; secondly, according to the line width and density corresponding to table intersection points in the line width logarithm-density matrix table, a series of test patterns are designed; thirdly, chemical machine grinding result data of the test patterns are collected, and the corresponding table intersection points are directly assigned; fourthly, on the basis of a linear interpolation mathematical method, chemical machine grinding result calculation and assignment are conducted on residual blank table intersection points in the line width logarithm-density matrix table; and fifthly, the intersection points of the line width logarithm-density matrix table are optimized, and the final simulating device is obtained through saving.
Description
Technical field
The present invention relates to field of semiconductor manufacture and EDA Technique field, more specifically, the present invention relates to
And a kind of analog of chemical mechanical milling tech.
Background technology
In ic manufacturing process, with the lifting of technology node, the continuous improvement of photoetching resolution, photoetching can solve
The minimum feature of analysis constantly reduces, and photoetching depth of focus is also rapidly reducing.Lithographic process window is also less and less.
Meanwhile, the number of plies of product design is but being continuously increased.Especially to metal level, the flatness impact photoetching on surface
In the required depth of focus, and the stress distribution of interconnection architecture etc..For the circuit of multilamellar, the serious shadow of flatness on surface
Ring the process window of photoetching.
In order to ensure the effectiveness of lithographic process window, product surface must reach certain flatness.Currently, integrated
During circuit manufactures, the technique that cmp (cmp) is usually used is flat to make resultant metal dielectric layer surface pattern reach
The purpose changed.
And in chemical mechanical planarization process, due to the selection ratio of lapping liquid, abrasive disk pressure, product surface pattern etc. becomes
Change so that the chip surface after cmp can not reach and completely planarize, but there is topology and rise and fall.Logical
Often, the concept for describing this pattern is medium dish and erosion medium resistance.Medium dish refers in graph position, Yi Zhongjie
The difference of the thickness between matter and another medium；Erosion medium resistance refers in the difference having graphics field and the no thickness of graphics field.
The dish of medium is the adjoint problem brought by cmp with erosion, and excessive medium dish and medium are invaded
Erosion equally impacts to lithographic process window, particularly evident to the impact in single exposure area (shot).Can affect simultaneously
The characteristics such as the resistance capacitance of interconnection line, thus affecting the time delay of interconnection line, impact to the yield and performance of chip.
Therefore, in order to improve product chips yield, reduce production cost, need in advance to product cmp it
Surface topography afterwards is predicted.
Due to the line width of medium dish and erosion medium resistance and figure, the variable such as distance between centers of tracks is related, and exists very big
Systemic and regular, so being by the cmp to integrated circuit diagram generally to the prediction of product surface pattern
Simulation is completing.And the simulation of cmp to be completed, need to be set up according to different technology nodes and production technology
Different cmp analog.
Generally, the flow process of complete cmp model (analog) foundation and checking includes following step
Rapid: to design resolution chart domain, production test figure reticle, press resolution chart flow, collect different step test chart figurate number
According to, by step debugging model, complete debugging result, run the checking of product piece, model optimization, the formal issue of model etc..
In existing flow process, during model data collection and model debugging, every step data need to be collected by production stage,
Set up the analog often walking, that is, from the beginning of electrochemical deposition (ecd), the cmp first step (bulk), second step
(tchd), the 3rd step (barr), collects data, debugs analog.Existing cmp analog method for building up
Have the disadvantage in that
1, complex steps；
2, collect data volume big；
3, model debugging is difficult；
4, it is long that the cycle set up by model；
5 it is not easy to optimize correction.
These shortcomings lead to whole flow process to carry out difficulty, and the whole production cycle is elongated, are not easy to the optimization checking between platform,
There is significant limitation.
Content of the invention
The technical problem to be solved is that there is drawbacks described above in prior art, provides a kind of chemical machinery
The analog of grinding technics, while ensureing cmp simulation precision, reduces data collection amount it is easier to complete
The foundation of analog and checking optimize, and shorten the cycle of foundation.
In order to realize above-mentioned technical purpose, according to the present invention, there is provided a kind of analog of chemical mechanical milling tech,
Including:
First step: according to the design rule under technique platform, design live width logarithm-density matrix form, including live width
The step footpath of the span of logarithm/density and live width logarithm/density coordinate sequence is chosen；；
Second step: according to the corresponding live width of form intersection point and density in live width logarithm-density matrix form, designing one is
Row resolution chart；
Third step: collect the cmp result data of each resolution chart, indirect assignment gives corresponding each form
Intersection point；
Four steps: the mathematical method based on linear interpolation, to remaining sky in described live width logarithm-density matrix form
White form intersection point carries out cmp result and calculates and assignment；
5th step: optimize described live width logarithm-density matrix form intersection point, obtain final analog.
Preferably, in first step, the span of live width logarithm l is taken the logarithm conversion gained by live width lw, and it passes through public affairs
Formula (1) is converted:
L={ logalw}2(1)
In formula, the unit of lw is μm that its span to be specified by the design rule scope of the technology node that is located, different
Technique platform determines the value of logarithm truth of a matter a, and { } 2 expression takes 2 significant digits significant digits.
The span of density is 0～1, and the step footpath of live width logarithm/density coordinate sequence is chosen by cmp mould
Intend the required precision of device and modeling efficiency determines.
Preferably, in second step, described resolution chart is to be sat with cross point in described live width logarithm-density matrix form
It is designated as live width density, is converted to resolution chart obtained from live width-distance between centers of tracks, its design number is no less than form intersection point sum
1/2
Preferably,, in four steps, remaining blank form intersection point in described live width logarithm-density matrix form is entered
Row cmp result calculates and assignment, comprises the following steps
Step 4.1: check live width logarithm-density matrix form, determine the form position of intersecting point being entered as sky, for being located at
Form any non-edge position and be entered as sky form intersection point, if 8 form intersection point g aboutI-1, j-1, gI, j-1, gI+1, j-1,
gI+1, j, gI+1, j+1, gI, j+1, gI-1, j+1, gI-1, jIn have at least four assignment, then carry out calculating and assignment by formula (2):
gI, j=w1*(gI-1, j+gI+1, j)+w2*(gI, j-1+gI, j+1)+w3*(gI-1, j+1+gI-1, j-1+gI+1, j-1+gI+1, j+1) (2)
In formula, i, j are the coordinate axess serial number in live width logarithm-density matrix form corresponding to live width logarithm/density, not
The form intersection point value being assigned is zero, w1～w3Obtained by the resolution chart cmp result data matching of collection
Arrive；
Step 4.2: circulation execution step step s4.1, make arbitrarily non-positioned at form in live width logarithm-density matrix form
Marginal position and be entered as sky form intersection point be all assigned；
Step 4.3: check again for live width logarithm-density matrix form, for positioned at any marginal position of form and assignment
For empty form intersection point, if handing over along its density axial direction or the live width logarithm axial direction continued presence form that at least 4 have been assigned
Point, then carry out calculating and assignment by one of formula (3) or formula (4):
gI, j=u1*gI, j-1+u2*gI, j-2+u3*gI, j-3+u4*gI, j-4(3)
gI, j=v1*gI-1, j+v2*gI-2, j+v3*gI-3, j+v4*gI-4, j(4)
In formula, i, j are the coordinate axess serial number in live width logarithm-density matrix form corresponding to live width logarithm/density,
gI, j-1, gI, j-2, gI, j-3, gI, j-4, gI-1, j, gI-2, j, gI-3, j, gI-4, jRepresent the form intersection point being assigned, u1～u4, v1～v4
Obtained by the resolution chart cmp result data matching of collection
Preferably, in the 5th step, check live width logarithm-density matrix form, and calculate pre- around each data grid
Determine the meansigma methodss of the data of number, if active sheet value and surrounding form average value exceed predetermined specifications, made a reservation for described
The data grid meansigma methodss of number replace it.
The present invention provides a kind of analog of chemical mechanical milling tech, is ensureing cmp simulation precision
Meanwhile, reduce data collection amount it is easier to the foundation of analog and checking optimize, and shorten it and set up the analog cycle.
Brief description
In conjunction with accompanying drawing, and by reference to detailed description below, it will more easily have more complete understanding to the present invention
And its adjoint advantages and features are more easily understood, wherein:
Fig. 1 schematically shows the stream of the analog of chemical mechanical milling tech according to the preferred embodiment of the invention
Cheng Tu.
Fig. 2 schematically shows a kind of live width logarithm according to the preferred embodiment of the invention-density matrix form and illustrates
Figure.
Fig. 3 a- Fig. 3 c is the three attribute forms of expression of the intersection point being entered as sky in live width logarithm-density matrix form
Schematic diagram；
It should be noted that accompanying drawing is used for the present invention is described, and the unrestricted present invention.Note, represent that the accompanying drawing of structure can
Can be not necessarily drawn to scale.And, in accompanying drawing, same or like element indicates same or like label.
Specific embodiment
In order that present disclosure is more clear and understandable, with reference to specific embodiments and the drawings in the present invention
Appearance is described in detail.
Fig. 1 schematically shows the stream of the analog of chemical mechanical milling tech according to the preferred embodiment of the invention
Cheng Tu.Fig. 2 schematically shows designed by the analog of chemical mechanical milling tech according to the preferred embodiment of the invention
Live width logarithm-density matrix form schematic diagram.Fig. 3 schematically shows the chemical machine setting up the preferred embodiment of the present invention
The schematic diagram of the analog of tool grinding technics.
As shown in Figure 1 to Figure 3, the analog of chemical mechanical milling tech according to the preferred embodiment of the invention includes:
First step s1: according to the design rule under technique platform, design live width logarithm-density matrix form, including line
The step footpath of the span of wide logarithm/density and live width logarithm/density coordinate sequence is chosen；
First, live width logarithm-density matrix form as shown in Figure 2 can be designed according to the design rule under technique platform.
In form, the value of the live width logarithm l of x direction (abscissa) is to be taken the logarithm conversion gained by live width, can be carried out by formula (1)
Conversion:
L={ logalw}2(1)
In formula, lw be live width (equivalent live width), unit be μm, span the setting by this analog technology node of lw
Count regular scope to specify；The precision having considered analog and modeling effect are chosen in the step footpath of live width logarithm l coordinate sequence
Rate requires, and precision is higher, modeling efficiency is lower, and the step footpath value of live width logarithm l coordinate sequence can be less；In the present embodiment,
The step footpath value of live width logarithm l is 0.2；{ } 2 expression takes 2 significant digits significant digits；Different process platform can have different
A value, in the present embodiment, logarithm truth of a matter a value is 10.
Density (dens) value in y direction (vertical coordinate) is 0～1, and the step footpath of density coordinate sequence is chosen and also considered
The precision of analog and modeling efficiency require, and precision is higher, modeling efficiency is lower, the step footpath value of density coordinate sequence is just
Can be less；In the present embodiment, the value that density walks footpath is 0.05.
In figure x-axis and certain intersection point gx of y-axis, y represents corresponding cmp under this live width (logarithm)-density conditions
Result (sits target value), and x value is corresponding live width logarithmic coordinates sequence, and y value is corresponding density coordinate sequence.Described chemistry
Mechanical lapping result includes but is not limited to the data such as dielectric thickness, medium relative altitude.
Second step s2: according to the corresponding live width of form intersection point and density in live width logarithm-density matrix form, design one
Series of tests figure.
Then, can be according to intersection point gx each in live width logarithm-density matrix form, the corresponding density of y, live width, designing one is
Arrange different resolution charts.For strengthening analog precision, the resolution chart number that design is chosen should be no less than intersection point in form
The 1/2 of sum.
Third step s3: collect the cmp result data of each resolution chart, indirect assignment gives corresponding each table
Lattice intersection point.
These resolution charts are applied to the cmp of reality, and collect these resolution charts grind in chemical machinery
Dielectric thickness after mill, medium dish, the related data such as erosion medium resistance, then correspond into live width logarithm-density matrix table
In lattice, it is assigned to intersection point gx, y.
In the present embodiment, have collected the height of the copper thickness after cmp and oxide, that is, in this matrix form
The intersection point gx of each resolution chart, y can be entered as the height of copper thickness and oxide.For example: gx, y { cu_thk:1000；
ox_hgt:950}.
Four steps s4: the mathematical method based on linear interpolation, to remaining in described live width logarithm-density matrix form
Blank form intersection point carries out cmp result and calculates and assignment；
Preferably, in four steps s4, remaining blank form intersection point in described live width logarithm-density matrix form is entered
Row cmp result calculates and assignment, comprises the following steps
Step s4.1: check live width logarithm-density matrix form, determine the position of the form intersection point being entered as sky, go forward side by side
One step utilizes the mathematical method of linear interpolation, calculates assignment to it.
Fig. 3 a- Fig. 3 c shows the three attribute forms of expression of the intersection point being entered as sky in live width logarithm-density matrix form.
For example, as shown in Figure 3 a, for positioned at form any non-edge position and be entered as sky form intersection point, about
There are 8 form intersection points:
gI-1, j-1, gI, j-1, gI+1, j-1, gI+1, j, gI+1, j+1, gI, j+1, gI-1, j+1, gI-1, j
If there being at least four assignment in intersection points around this 8, can carry out calculating simultaneously assignment by formula (2):
gI, j=w1*(gI-1, j+gI+1, j)+w2*(gI, j-1+gI, j+1)+w3*(gI-1, j+1+gI-1, j-1+gI+1, j-1+gI+1, j+1) (2)
In this formula, i, j are the coordinate axess sequence in live width logarithm-density matrix form corresponding to live width logarithm/density
Number, the form intersection point value not being assigned is zero, w1～w3Intended by the resolution chart cmp result data of collection
Conjunction obtains；
Step s4.2: circulation execution step s4.1, make to be located at any non-edge of form in live width logarithm-density matrix form
Position and be entered as sky form intersection point be all assigned；
Step s4.3: check again for live width logarithm-density matrix form, for positioned at any marginal position of form and assignment
For empty form intersection point, as shown in Figure 3 b, if along its y-axis (density is axially) exist continuous 4 and above be assigned intersection point, can
By formula (3) calculating assignment:
gI, j=u1*gI, j-1+u2*gI, j-2+u3*gI, j-3+u4*gI, j-4(3)
Or, as shown in Figure 3 c, if along x-axis (live width logarithm is axially) also at least 4 intersection points being assigned of continued presence,
Then can carry out calculating and assignment by formula (4):
gI, j=v1*gI-1, j+v2*gI-2, j+v3*gI-3, j+v4*gI-4, j(4)
In formula (3), (4), i, j are the coordinate axess in live width logarithm-density matrix form corresponding to live width logarithm/density
Serial number, gI, j-1, gI, j-2, gI, j-3, gI, j-4, gI-1, j, gI-2, j, gI-3, j, gI-4, jRepresent the form intersection point being assigned, u1~
u4, v1～v4Obtained by the resolution chart cmp result data matching of collection.
When calculating assignment, formula (3) circulation can be adopted to execute this step so that along variable density side in density direction first
Meet the non-assignment form intersection point of condition to no longer presence.Subsequently formula (4) circulation execution is adopted to be somebody's turn to do in live width logarithm direction again
So that no longer there is the non-assignment form intersection point meeting condition along live width logarithm change direction in step.
5th step s5: optimize described live width logarithm-density matrix form and obtain final analog form.
Preferably, in the 5th step s5, check live width logarithm-density matrix form, and calculate 8 around each data intersection point
The weighted average of individual data, if active sheet value and surrounding form weighted average differ by more than certain specification, with described 8 data
Weighted average replace it.Circulation executes this step so that the form number changed when having checked is zero.
Finally, by the live width logarithm-density matrix table storage of form intersection point whole assignment, and by corresponding technique platform
Under cmp analog be formatted as the live width logarithm-density matrix form of specification one by one, complete analog
Foundation.In this form, each intersection point shows corresponding cmp result data under this live width density.
The analog of the chemical mechanical milling tech providing with respect to prior art, the present invention is using based on design rule
Figure to set up matrix form, cover all density live width situations of product node；Directly with after cmp
Result correspondence completes the setting up so that same ensureing that analog predicts the outcome of cmp analog therewith
When, data collection amount greatly reduces；And debug the stage in analog, script can be write to realize calculating debugging, direct access
Result is so that speed set up by analog greatly promotes.
To sum up, the analog of chemical mechanical milling tech of the present invention can ensure simulation precision while,
Reduce analog and set up complexity, reduce data collection amount, speed set up by lifting analog so that week set up by analog
Phase greatly shortens.The method that cmp analog of the present invention is set up can ensure analog precision
Meanwhile, reduce analog and set up complexity, reduce analog data collection amount, lifting analog set up speed so that
The cmp analog cycle of setting up is shortened.
Furthermore, it is necessary to explanation, unless stated otherwise or point out, otherwise the term in description " first ", " the
Two ", " 3rd " etc. describes each assembly being used only in differentiation description, element, step etc., rather than is used for representing each
Logical relation between assembly, element, step or ordering relation etc..
Although it is understood that the present invention is disclosed as above with preferred embodiment, but above-described embodiment being not used to
Limit the present invention.For any those of ordinary skill in the art, without departing under technical solution of the present invention ambit,
The technology contents that the disclosure above all can be utilized are made many possible variations and modification, or are revised as to technical solution of the present invention
Equivalent embodiments with change.Therefore, every content without departing from technical solution of the present invention, according to the technical spirit pair of the present invention
Any simple modification made for any of the above embodiments, equivalent variations and modification, all still fall within the scope of technical solution of the present invention protection
Interior.
And it should also be understood that the present invention is not limited to specific method described herein, compound, material, system
Make technology, usage and application, they can change.It should also be understood that term described herein be used merely to describe specific
Embodiment, rather than be used for limiting the scope of the present invention.Must be noted that herein and claims used in
Singulative " one ", " a kind of " and " being somebody's turn to do " include complex reference, unless context explicitly indicates that contrary.Therefore, example
As the citation of " element " meaned with the citation to one or more elements, and including known to those skilled in the art
Its equivalent.Similarly, as another example, the citation of " step " or " device " is meaned to one or
Multiple steps or the citation of device, and potentially include secondary step and second unit.Should be managed with broadest implication
All conjunctions that solution uses.Therefore, word "or" should be understood that the definition with logical "or", rather than logical exclusive-OR
Definition, unless context explicitly indicates that contrary.Structure described herein will be understood as also quoting from the function of this structure
Equivalent.Can be interpreted that approximate language should be understood like that, unless context explicitly indicates that contrary.
Claims (8)
1. a kind of analog of chemical mechanical milling tech is it is characterised in that include:
First step: according to the design rule under technique platform, design live width logarithm-density matrix form, including live width logarithm/
The step footpath of the span of density and live width logarithm/density coordinate sequence is chosen；
A series of second step: according to the corresponding live width of form intersection point and density in live width logarithm-density matrix form, design surveys
Attempt shape；
Third step: collect the cmp result data of each resolution chart, indirect assignment gives corresponding each form intersection point；
Four steps: the mathematical method based on linear interpolation, to remaining blank table in described live width logarithm-density matrix form
Lattice intersection point carries out cmp result and calculates and assignment；
5th step: optimize described live width logarithm-density matrix form intersection point, preserve and obtain final analog.
2. chemical mechanical milling tech according to claim 1 analog it is characterised in that
In first step, the span of live width logarithm l is taken the logarithm conversion gained by live width lw, and it is entered by following first formula
Row conversion:
L={ logalw}2
In formula, the unit of lw is μm that its span to be specified by the design rule scope of the technology node that is located, different technique
Platform determines the value of logarithm truth of a matter a, and { } 2 expression takes 2 significant digits significant digits.
The span of density is 0～1, and the step footpath of live width logarithm/density coordinate sequence is chosen and simulated dress by cmp
The required precision put and modeling efficiency determine.
3. the analog of chemical mechanical milling tech according to claim 1 is it is characterised in that in second step, institute
Stating resolution chart is to intersect point coordinates with described live width logarithm-density matrix form for live width density, is converted between live width-line
Away from obtained from resolution chart, its design number be no less than form intersection point sum 1/2.
4. the analog of chemical mechanical milling tech according to claim 1 is it is characterised in that in third step, institute
State cmp result data including but not limited to the dielectric thickness after resolution chart cmp, dielectric disk
Shape, erosion medium resistance etc..The cmp result data indirect assignment obtaining will be collected to corresponding each form intersection point.
5. the analog of chemical mechanical milling tech according to claim 1 is it is characterised in that in four steps, right
In described live width logarithm-density matrix form, remaining blank form intersection point carries out the calculating of cmp result assignment,
Comprise the following steps:
First sub-step: check live width logarithm-density matrix form, determine the form position of intersecting point being entered as sky, for being located at
Form any non-edge position and be entered as sky form intersection point, if 8 form intersection point g aboutI-1, j-1, gI, j-1, gI+1, j-1,
gI+1, j, gI+1, j+1, gI, j+1, gI-1, j+1, gI-1, jIn have at least four assignment, then carry out calculating and assignment by the second formula:
gI, j=w1*(gI-1, j+gI+1, j)+w2*(gI, j-1+gI, j+1)+w3, (gI-1, j+1+gI-1, j-1+gI+1, j-1+gi+1j+1)
In formula, i, j are the coordinate axess serial number in live width logarithm-density matrix form corresponding to live width logarithm/density, are not assigned
The form intersection point value of value is zero, w1～w3Obtained by the resolution chart cmp result data matching of collection.
6. the analog of chemical mechanical milling tech according to claim 5 is it is characterised in that in four steps, right
In described live width logarithm-density matrix form, remaining blank form intersection point carries out the calculating of cmp result assignment,
Further include steps of
Second sub-step: circulation execution the first sub-step, make to be located at any non-edge of form in live width logarithm-density matrix form
Position and be entered as sky form intersection point be all assigned；
3rd sub-step: check again for live width logarithm-density matrix form, for positioned at any marginal position of form and be entered as
Empty form intersection point, if along its density axial direction or the live width logarithm axial direction continued presence form intersection point that at least 4 have been assigned,
Then carry out calculating and assignment by one of the 3rd formula or the 4th formula:
3rd formula: gI, j=u1*gI, j-1+u2*gI, j-2+u3*gI, j-3+u4*gI, j-4
4th formula: gI, j=v1*gI-1, j+v2*gI-2, j+v3*gI-3, j+v4*gI-4, j
In formula, i, j are the coordinate axess serial number in live width logarithm-density matrix form corresponding to live width logarithm/density, gI, j-1,
gI, j-2, gI, j-3, gI, j-4, gI-1, j, gI-2, j,gI-3, j,gI-4, jRepresent the form intersection point being assigned, u1～u4, v1～v4By
The resolution chart cmp result data matching collected obtains.
7. cmp analogy method according to claim 6 is it is characterised in that in the 3rd sub-step, calculating and assign
During value, axially this step is executed so that no longer there is satisfaction along variable density direction using the 3rd formula circulation in density first
The non-assignment form intersection point of condition；Subsequently again in live width logarithmic axis to this step being executed using the 4th formula circulation so that along the line
No longer there is the non-assignment form intersection point meeting condition in wide logarithm change direction.
8. the analogsimulation of chemical mechanical milling tech according to claim 1 is it is characterised in that in the 5th step, examine
Line inspection width logarithm-density matrix form, and calculate the meansigma methodss of the data of predetermined number around each data grid, if current table
Lattice value and surrounding form average value exceed predetermined specifications, replace it with the data grid meansigma methodss of described predetermined number.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111898847A (en) * | 2019-06-11 | 2020-11-06 | 济南摩拜尔软件有限公司 | Numerical control punch and identity management method for mold etching two-dimensional code for numerical control bender |
| CN113618621A (en) * | 2020-04-22 | 2021-11-09 | 财团法人工业技术研究院 | Grinding and polishing simulation method and system and grinding and polishing process transfer method |
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| CN113618621B (en) * | 2020-04-22 | 2023-08-08 | 财团法人工业技术研究院 | Grinding and polishing simulation method, grinding and polishing simulation system and grinding and polishing process transfer method |
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