CN106330109B - Cascade amplifying circuit and power amplifier - Google Patents
Cascade amplifying circuit and power amplifier Download PDFInfo
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- CN106330109B CN106330109B CN201610793670.2A CN201610793670A CN106330109B CN 106330109 B CN106330109 B CN 106330109B CN 201610793670 A CN201610793670 A CN 201610793670A CN 106330109 B CN106330109 B CN 106330109B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
The present invention provides a kind of cascade amplifying circuit and power amplifier.The cascade amplifying circuit includes transistor M1 and transistor M2, M1 and M2 are GaAs-MOSHEMT, the source electrode ground connection of the M1, signal input part V of the grid of the M1 as the cascade amplifying circuitinThe grid of the M1 passes through choke induction L1 connection negative voltage source VSS1, the drain electrode of the M1 passes through choke induction L4 connection positive voltage source VDD1, the drain electrode of the M1 connects the source electrode of the M2 by capacitance C2, the source electrode of the M2 is grounded by choke induction L5, the grid of the M2 is grounded by the grid of choke induction L2 connection negative voltage source VSS1, the M2 by grid capacitance C1, signal output end V of the drain electrode of the M2 as amplifying circuitout, the drain electrode of the M2 passes through choke induction L3 connection positive voltage source VDD2.Technical solution of the present invention is without introducing additional boost module, to reduce the complexity of design under the premise of guaranteeing preferable power amplification performance.
Description
Technical field
The present invention relates to semiconductor integrated circuit technology fields more particularly to a kind of cascade amplifying circuit and power to put
Big device.
Background technique
In the application field of handset power amplifier, traditional framework generally uses Si-MOSFET (Metal Oxide
Semiconductor Field Effect Transistor, Metal Oxide Semiconductor Field Effect Transistor) carry out design power
Amplifier, it is relatively low for Si-MOSFET breakdown voltage, and mobile phone power supply is generally 3.3V, therefore, power amplifier
Two Si-MOSFET M1 and M2 in power amplification circuit are attached using the structure of stack cascade (such as Fig. 1 institute
Show), wherein the source electrode of M1 is grounded, signal input part V of the grid of M1 as amplifying circuitin, the grid of M1 passes through choke induction
The drain electrode of L1 connection negative voltage source VSS1, M1 are connect with the source electrode of M2, and the grid of M2 passes through choke induction L2 connection negative voltage source
The grid of VSS2, M2 are grounded by grid capacitance C1, signal output end V of the drain electrode of M2 as power amplification circuitout, M2's
Drain electrode passes through choke induction L3 connection positive voltage source VDD.
Due to GaAs-MOSHEMT (Metal Oxide Semiconductor High Electron Mobility
Transistor, metal-oxide semiconductor (MOS) high electron mobility transistor) there is performance more preferably than Si-MOSFET, there is text
It is proposed is offered to replace the Si-MOSFET in Fig. 1 with GaAs-MOSHEMT.But due to GaAs-MOSHEMT breakdown voltage ratio
It is higher, if by the connection structure of stack cascade be applied to GaAs-MOSHEMT, need 3.3V power supply it
It is outer to introduce additional boost module for the power amplification circuit of stack cascode structure, to increase the complexity of design
Degree.
Summary of the invention
Cascade amplifying circuit and power amplifier provided by the invention, without introducing additional boost module, from
And under the premise of guaranteeing preferable power amplification performance, reduce the complexity of design.
In a first aspect, the present invention provides a kind of cascade amplifying circuit, the cascade amplifying circuit includes crystal
Pipe M1 and transistor M2, the transistor M1 and the transistor M2 are GaAs-MOSHEMT, wherein the source electrode of the M1 connects
Ground, signal input part V of the grid of the M1 as the cascade amplifying circuitin, while the grid of the M1 is by gripping
The drain electrode of galvanic electricity sense L1 connection negative voltage source VSS1, the M1 pass through choke induction L4 connection positive voltage source VDD1, while described
The drain electrode of M1 connects the source electrode of the M2 by capacitance C2, and the source electrode of the M2 is grounded by choke induction L5, the M2
Grid by choke induction L2 connection negative voltage source VSS2, while the grid of the M2 is grounded by grid capacitance C1, described
Signal output end V of the drain electrode of M2 as amplifying circuitout, while the drain electrode of the M2 passes through choke induction L3 connection positive voltage
Source VDD2.
Second aspect, the present invention provide a kind of power amplifier, and the power amplifier includes power supply S, source impedance Rs, every
Straight capacitor C3, input matching network M-N1, drive amplification circuit, capacitance C4, inter-stage matching network M-N2, power amplification electricity
Road, output matching network M-N3, capacitance C5 and load Rload；
Wherein, one end of the input matching network M-N1 passes through the capacitance C3 and the source impedance RsOne end
Connection, the source impedance RsThe other end by the power supply S be grounded, the other end of the input matching network M-N1 with it is described
The input terminal of drive amplification circuit connects；
The output end of the drive amplification circuit is connect by capacitance C4 with one end of inter-stage matching network M-N2, institute
The other end for stating inter-stage matching network M-N2 is connect with the input terminal of the power amplification circuit；
The output end of the power amplification circuit is connect with one end of the output matching network M-N3, the output matching
The other end of network M-N3 passes through the capacitance C5 and load RloadOne end connection, the load RloadAnother termination
Ground；
The drive amplification circuit includes transistor M3, and the transistor M3 is GaAs-MOSHEMT, the source electrode of the M3
The grid of ground connection, the M3 connects as the input terminal of the drive amplification circuit and the other end of the input matching network M-N1
It connects, while the grid of the M3 is put by the drain electrode of choke induction L6 connection negative voltage source VSS3, the M3 as the driving
The output end of big circuit is connect by the capacitance C4 with one end of the inter-stage matching network M-N2, while the M3
Drain electrode passes through choke induction L7 connection positive voltage source VDD3；
The power amplification circuit includes transistor M1 and transistor M2, the transistor M1 and the transistor M2 are
GaAs-MOSHEMT, wherein the source electrode of the M1 is grounded, the grid of the M1 as the power amplification circuit input terminal with
The other end of the inter-stage matching network M-N2 connects, while the grid of the M1 passes through choke induction L1 connection negative voltage source
The drain electrode of VSS1, the M1 are by choke induction L4 connection positive voltage source VDD1, while the drain electrode of the M1 passes through capacitance
C2 connects the source electrode of the M2, and the source electrode of the M2 is grounded by choke induction L5, and the grid of the M2 passes through choke induction L2
Negative voltage source VSS2 is connected, while the grid of the M2 is grounded by grid capacitance C1, the drain electrode of the M2 is as the power
The output end of amplifying circuit passes through choke induction with the drain electrode that one end of the output matching network M-N3 connect the M2 simultaneously
L3 connection positive voltage source VDD2.
Cascade amplifying circuit and power amplifier provided in an embodiment of the present invention pass through compared with prior art
Stack cascade amplifying circuit is improved, allows to easily adjust the inclined of single transistor in cascade amplifying circuit
Set voltage, characteristic high for GaAs-MOSHEMT breakdown voltage in this way, in the case where mobile phone power supply is relatively low both without
Additional boost module need to be introduced, and the advantage of cascode structure can be retained, i.e., so that power amplifier increasing with higher
Benefit, higher output power and the preferable linearity.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the stack cascade amplifying circuit of prior art intermediate power amplifier；
Fig. 2 is the structural schematic diagram of one embodiment of the invention cascade amplifying circuit；
Fig. 3 is the structural schematic diagram of one embodiment of the invention power amplifier；
Fig. 4 is the structural schematic diagram of another embodiment of the present invention power amplifier.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
It is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
The present invention provides a kind of cascade amplifying circuit, as shown in Fig. 2, the cascade amplifying circuit includes crystal
Pipe M1 and transistor M2, the transistor M1 and the transistor M2 are GaAs-MOSHEMT, wherein the source electrode of the M1 connects
Ground, signal input part V of the grid of the M1 as the cascade amplifying circuitin, while the grid of the M1 is by gripping
The drain electrode of galvanic electricity sense L1 connection negative voltage source VSS1, the M1 pass through choke induction L4 connection positive voltage source VDD1, while described
The drain electrode of M1 connects the source electrode of the M2 by capacitance C2, and the source electrode of the M2 is grounded by choke induction L5, the M2
Grid by choke induction L2 connection negative voltage source VSS2, while the grid of the M2 is grounded by grid capacitance C1, described
Signal output end V of the drain electrode of M2 as amplifying circuitout, while the drain electrode of the M2 passes through choke induction L3 connection positive voltage
Source VDD2.
Cascade amplifying circuit provided in an embodiment of the present invention, it is compared with prior art, total by improving stack
Source is total to grid amplifying circuit, allows to easily adjust the bias voltage of single transistor in cascade amplifying circuit, in this way
For the high characteristic of GaAs-MOSHEMT breakdown voltage, in the case where mobile phone power supply is relatively low both without introducing additionally
Boost module, and the advantage of cascode structure can be retained, i.e., so that power amplifier gain with higher, higher output
Power and the preferable linearity.
The embodiment of the present invention also provides a kind of power amplifier, as shown in figure 3, the power amplifier includes power supply S, source
Impedance Rs, capacitance C3, input matching network M-N1, drive amplification circuit, capacitance C4, inter-stage matching network M-N2,
Power amplification circuit, output matching network M-N3, capacitance C5 and load Rload；
Wherein, one end of the input matching network M-N1 passes through the capacitance C3 and the source impedance RsOne end
Connection, the source impedance RsThe other end by the power supply S be grounded, the other end of the input matching network M-N1 with it is described
The input terminal of drive amplification circuit connects；
The output end of the drive amplification circuit is connect by capacitance C4 with one end of inter-stage matching network M-N2, institute
The other end for stating inter-stage matching network M-N2 is connect with the input terminal of the power amplification circuit；
The output end of the power amplification circuit is connect with one end of the output matching network M-N3, the output matching
The other end of network M-N3 passes through the capacitance C5 and load RloadOne end connection, the load RloadAnother termination
Ground；
The drive amplification circuit includes transistor M3, and the transistor M3 is GaAs-MOSHEMT, the source electrode of the M3
The grid of ground connection, the M3 connects as the input terminal of the drive amplification circuit and the other end of the input matching network M-N1
It connects, while the grid of the M3 is put by the drain electrode of choke induction L6 connection negative voltage source VSS3, the M3 as the driving
The output end of big circuit is connect by the capacitance C4 with one end of the inter-stage matching network M-N2, while the M3
Drain electrode passes through choke induction L7 connection positive voltage source VDD3；
The power amplification circuit includes transistor M1 and transistor M2, the transistor M1 and the transistor M2 are
GaAs-MOSHEMT, wherein the source electrode of the M1 is grounded, the grid of the M1 as the power amplification circuit input terminal with
The other end of the inter-stage matching network M-N2 connects, while the grid of the M1 passes through choke induction L1 connection negative voltage source
The drain electrode of VSS1, the M1 are by choke induction L4 connection positive voltage source VDD1, while the drain electrode of the M1 passes through capacitance
C2 connects the source electrode of the M2, and the source electrode of the M2 is grounded by choke induction L5, and the grid of the M2 passes through choke induction L2
Negative voltage source VSS2 is connected, while the grid of the M2 is grounded by grid capacitance C1, the drain electrode of the M2 is as the power
The output end of amplifying circuit passes through choke induction with the drain electrode that one end of the output matching network M-N3 connect the M2 simultaneously
L3 connection positive voltage source VDD2.
Wherein, the input matching network M-N1 is used for the source impedance Rs(such as 50 ohm) are matched to the driving
The input impedance of amplifying circuit, the inter-stage matching network M-N2 is for the output impedance of the drive amplification circuit to be matched to
The optimum source impedance of the power amplification circuit, the output matching network M-N3 are used for load impedance Rload(such as 50 Europe
Nurse) it is matched to the optimum load impedance of the power amplification circuit, the optimum source impedance of the power amplification circuit is led by source
It invites and, the optimum load impedance of the power amplification circuit is got by load balance factor.
Power amplifier provided in an embodiment of the present invention, compared with prior art, by improving stack cascade
Amplifying circuit allows to easily adjust the bias voltage of single transistor in cascade amplifying circuit, is directed in this way
The high characteristic of GaAs-MOSHEMT breakdown voltage, in the case where mobile phone power supply is relatively low both without introducing additional boosting
Module, and the advantage of cascode structure can be retained, i.e., so that power amplifier gain with higher, higher output power
And the preferable linearity.
Further, as shown in figure 4, the power amplifier further includes fundamental frequency enhancing capacitor C6, wherein the fundamental frequency increases
One end of strong capacitive C6 connects the output end of the power amplification circuit, the other end ground connection of the fundamental frequency enhancing capacitor C6.
Wherein, the effect of the fundamental frequency enhancing capacitor C6 mainly further increases the output power of power amplifier.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by those familiar with the art, all answers
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (3)
1. a kind of cascade amplifying circuit, which is characterized in that the cascade amplifying circuit includes the first transistor (M1)
With second transistor (M2), the first transistor (M1) and the second transistor (M2) are GaAs-MOSHEMT, wherein
The source electrode of the first transistor (M1) is grounded, and the grid of the first transistor (M1) is as the cascade amplifying circuit
Signal input part (Vin), while the grid of the first transistor (M1) connects the first negative electricity by the first choke induction (L1)
The drain electrode of potential source (VSS1), the first transistor (M1) connects the first positive voltage source by the 4th choke induction (L4)
(VDD1), while the drain electrode of the first transistor (M1) passes through the second capacitance (C2) connection second transistor (M2)
Source electrode, the source electrode of the second transistor (M2) is grounded by the 5th choke induction (L5), the second transistor (M2)
Grid is by the second choke induction (L2) connection the second negative voltage source (VSS2), while the grid of the second transistor (M2) is logical
Cross first grid capacitor (C1) ground connection, signal output end (V of the drain electrode of the second transistor (M2) as amplifying circuitout),
The drain electrode of the second transistor (M2) simultaneously passes through third choke induction (L3) connection the second positive voltage source (VDD2).
2. a kind of power amplifier, which is characterized in that the power amplifier includes power supply (S), source impedance (Rs), third blocking
Capacitor (C3), input matching network (M-N1), drive amplification circuit, the 4th capacitance (C4), inter-stage matching network (M-N2),
Power amplification circuit, output matching network (M-N3), the 5th capacitance (C5) and load (Rload)；
Wherein, one end of the input matching network (M-N1) passes through the third capacitance (C3) and the source impedance (Rs)
One end connection, the source impedance (Rs) the other end by the power supply (S) be grounded, the input matching network (M-N1)
The other end is connect with the input terminal of the drive amplification circuit；
The output end of the drive amplification circuit passes through the 4th capacitance (C4) and the inter-stage matching network (M-N2)
One end connection, the other end of the inter-stage matching network (M-N2) connect with the input terminal of the power amplification circuit；
The output end of the power amplification circuit is connect with the one end of the output matching network (M-N3), the output pair net
The other end of network (M-N3) passes through the 5th capacitance (C5) and the load (Rload) one end connection, the load
(Rload) the other end ground connection；
The drive amplification circuit includes third transistor (M3), and the third transistor (M3) is GaAs-MOSHEMT, described
The source electrode of third transistor (M3) is grounded, input terminal of the grid of the third transistor (M3) as the drive amplification circuit
It is connect with the other end of the input matching network (M-N1), while the grid of the third transistor (M3) passes through the 6th chokes
Inductance (L6) connects third negative voltage source (VSS3), and the drain electrode of the third transistor (M3) is as the drive amplification circuit
Output end is connect by the 4th capacitance (C4) with one end of the inter-stage matching network (M-N2), while the third
The drain electrode of transistor (M3) passes through the 7th choke induction (L7) connection third positive voltage source (VDD3)；
The power amplification circuit includes the first transistor (M1) and second transistor (M2), the first transistor (M1) and institute
Stating second transistor (M2) is GaAs-MOSHEMT, wherein the source electrode of the first transistor (M1) is grounded, and described first is brilliant
The grid of body pipe (M1) connects as the input terminal of the power amplification circuit and the other end of the inter-stage matching network (M-N2)
It connects, while the grid of the first transistor (M1) passes through the first choke induction (L1) connection the first negative voltage source (VSS1), institute
The drain electrode for stating the first transistor (M1) connects the first positive voltage source (VDD1) by the 4th choke induction (L4), while described first
The drain electrode of transistor (M1) connects the source electrode of the second transistor (M2), second crystal by the second capacitance (C2)
The source electrode for managing (M2) is grounded by the 5th choke induction (L5), and the grid of the second transistor (M2) passes through the second choke induction
(L2) the second negative voltage source (VSS2) is connected, while the grid of the second transistor (M2) is connect by first grid capacitor (C1)
Ground, output end and the output matching network (M- of the drain electrode of the second transistor (M2) as the power amplification circuit
N3 the drain electrode of the second transistor (M2) simultaneously of one end connection) passes through third choke induction (L3) and connects the second positive voltage source
(VDD2)。
3. power amplifier according to claim 2, the power amplifier further includes fundamental frequency enhancing capacitor (C6),
In, one end of fundamental frequency enhancing capacitor (C6) connects the output end of the power amplification circuit, and the fundamental frequency enhances capacitor
(C6) other end ground connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610793670.2A CN106330109B (en) | 2016-08-31 | 2016-08-31 | Cascade amplifying circuit and power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610793670.2A CN106330109B (en) | 2016-08-31 | 2016-08-31 | Cascade amplifying circuit and power amplifier |
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| CN106330109A CN106330109A (en) | 2017-01-11 |
| CN106330109B true CN106330109B (en) | 2019-02-12 |
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| CN201610793670.2A Active CN106330109B (en) | 2016-08-31 | 2016-08-31 | Cascade amplifying circuit and power amplifier |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107483020A (en) * | 2017-08-04 | 2017-12-15 | 杭州长泽科技有限公司 | A kind of elimination circuit of power amplifier electricity memory effect |
| JP2020039053A (en) | 2018-09-04 | 2020-03-12 | 株式会社村田製作所 | Power amplifier circuit |
| JP2020155974A (en) | 2019-03-20 | 2020-09-24 | 株式会社村田製作所 | Power amplifier |
| JP2020171004A (en) | 2019-04-05 | 2020-10-15 | 株式会社村田製作所 | Power amplifier |
| JP2021090168A (en) | 2019-12-05 | 2021-06-10 | 株式会社村田製作所 | Power amplifier circuit |
| JP2021114751A (en) | 2020-01-21 | 2021-08-05 | 株式会社村田製作所 | Power amplifier circuit |
| CN113746442B (en) * | 2021-11-05 | 2022-02-11 | 成都明夷电子科技有限公司 | Low-voltage high-linearity cascode amplifier |
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| CN1308788A (en) * | 1998-07-07 | 2001-08-15 | 松下电器产业株式会社 | Semiconductor amplifier circuit and system |
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| CN102723917A (en) * | 2011-03-30 | 2012-10-10 | 比亚迪股份有限公司 | Power amplifier |
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| CN1308788A (en) * | 1998-07-07 | 2001-08-15 | 松下电器产业株式会社 | Semiconductor amplifier circuit and system |
| KR20010002982A (en) * | 1999-06-19 | 2001-01-15 | 김영석 | Matching Circuit Embedded in Low Noise Amplifier |
| CN102246411A (en) * | 2008-12-12 | 2011-11-16 | 高通股份有限公司 | Techniques for improving amplifier linearity |
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