CN106328779A - 一种近白光QLED的CdS量子点的改良方法 - Google Patents
一种近白光QLED的CdS量子点的改良方法 Download PDFInfo
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- CN106328779A CN106328779A CN201610888559.1A CN201610888559A CN106328779A CN 106328779 A CN106328779 A CN 106328779A CN 201610888559 A CN201610888559 A CN 201610888559A CN 106328779 A CN106328779 A CN 106328779A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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Abstract
本发明公开了一种近白光QLED的CdS量子点的改良方法，本发明在普通CdS量子点合成上更换了封端剂，以提高光致发光效率；在CdS量子点水溶液中加入了Triton X‑100活性剂，以减小去离子水的表面张力，使得CdS量子点水溶液在超疏水的PVK层表面的接触角大大减小，使CdS量子点溶液能在PVK层上更好的铺展，实现均匀的旋涂，完成QLED结构；在CdS量子点层高温退火过程中设定不同温度测其发光效率，得到最佳退火温度，完善CdS量子点的改良。
Description
技术领域
本发明涉及一种近白光QLED的CdS量子点的改良方法。
背景技术
量子点发光二极管作为最新一代的发光二极管，吸引了人们极大的注意力。市面上存在这量子点大小可调、窄带发射、发光效率高的QLED，但用这种量子点合成发白光的QLED工艺复杂。而现在存在的CdS量子点合成材料昂贵，合成步骤含有有毒物质。因此现在缺少一种发射白光、色域纯净、工艺简单、性能稳定的量子点发光二极管。
发明内容
发明目的：本发明所要解决的技术问题是：找到一种简便的近白光QLED的CdS量子点的合成方法，解决含有超亲水CdS量子点的水溶液不能均匀旋涂在超疏水PVK层的问题，进一步改进，增加其发光效率。
技术方案：提供一种近白光QLED的CdS量子点的改良方法，简化了合成步骤，避免有毒步骤的操作，用TGA代替TG作封端剂，提高量子产率；解决了超亲水CdS量子点水溶液无法在超疏水PVK层表面均匀旋涂的困难，找到一个合适的退火温度，使用CdS量子点旋涂在PVK层上之后，能够稳定存在，用Mg:Ag代替Al作阴极，提高发光效率。
有益效果：与现有技术相比，本发明的近白光QLED的CdS量子点的改良方法器件结构更简单，操作步骤更方便；实现了超亲水的CdS量子点水溶液在超疏水PVK层表面的均匀铺展；适宜的退火温度增加了CdS量子点的稳定性，提高了发光效率；阴极电极用Mg:Ag替代Al，改善了发光效率。
附图说明
图1是QLED结构示意图。
具体实施方式
下面结合附图对本发明做更进一步解释。
如图1所示为QLED结构示意图，在刻蚀有ITO导电电极2的玻璃1上，旋涂PEDOT-PSS，110℃退火烘烤1h得到25nm的3；旋涂PVK，100℃退火烘烤1h得到4；旋涂CdS量子点，190℃退火烘烤1h得到5；最后度上Al或Mg:Ag电极得到6。
CdS量子点溶液制备方法为取50ml混合有5mM CdSO4,65mM Na2S2O3和15mM TGA的溶液，其PH调节至8.5，加热至80℃搅拌1h，离心后分散在去离子水中；按体积比2000:1的比例加入Triton X-100，得到最后的CdS量子点溶液。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。
Claims (3)
1.一种近白光QLED的CdS量子点的改良方法，包括在常规热化学方法制备CdS量子点的ZnO量子的基础上，用hioglycolic acid(TGA)代替thiogelycerol(TG)作为封端剂，更好的保护发射近白光的CdS量子点，以提高CdS量子点量子产率；所述CdS量子点制备的水溶液中加入一定比例的Triton X-100作为活性剂，减小溶有超亲水CdS量子点的去离子水的表面张力，使其能均匀附着于超疏水的PVK层之上。
2.根据权利要求1所述的一种近白光QLED的CdS量子点的改良方法，其特征在于：所述溶有超亲水CdS量子点的去离子水的铺展在超疏水的PVK层上旋涂之后，以190℃退火，提高结构稳定性，提器件高发光效率。
3.根据权利要求1所述的一种近白光QLED的CdS量子点的改良方法，其特征在于：所述CdS量子点退火之后，用Mg:Ag作阴极，以提高器件性能。
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730584A (zh) * | 2013-12-27 | 2014-04-16 | 北京京东方光电科技有限公司 | 一种显示面板及显示装置 |
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- 2016-10-11 CN CN201610888559.1A patent/CN106328779A/zh active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730584A (zh) * | 2013-12-27 | 2014-04-16 | 北京京东方光电科技有限公司 | 一种显示面板及显示装置 |
Non-Patent Citations (1)
| Title |
|---|
| M. MOLAEI 等: "Near-white emitting QD-LED based on hydrophilic CdS nanocrystals", 《JOURNAL OF LUMINESCENCE》 * |
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