CN106328205A - Charge pump control circuit structure for embedded flash memory - Google Patents

Abstract

The invention provides a charge pump control circuit structure for an embedded flash memory. The structure comprises a charge pump control unit, wherein the charge pump control unit comprises a positive-voltage charge pump voltage detection circuit, a negative-voltage charge pump voltage detection circuit, a charge pump enable signal generation circuit, a pumping pressure clock frequency dividing circuit and a charge pump pumping-pressure clock source generation circuit; a pumping-pressure clock is effectively controlled according to dynamic power consumption configuration information externally provided by a flash memory circuit and enable signals of the positive-voltage charge pump and the negative-voltage charge pump, the state of the positive-voltage charge pump and the state of the negative-voltage charge pump are respectively determined by detecting the output voltage of the positive-voltage charge pump and the output voltage of the negative-voltage charge pump, a pumping-pressure clock frequency control flow is set for the positive-voltage charge pump and negative-voltage charge pump so as to respectively control the pumping-pressure clock frequency in a voltage establishing process, and the dynamic power consumption of positive-voltage and negative voltage charge pumps is respectively and independently controlled in real time so as to control the dynamic power consumption of the embedded flash memory when the output voltage of the charge pumps is established.

Description

A kind of control electrical appliances for electric charge pump structure of embedded flash memory

Technical field

The invention belongs to electronic circuit field, relate to control circuit, particularly relate to the electric charge pump control of a kind of embedded flash memory Circuit processed.

Background technology

Flash memory (Flash Memory is called for short flash memory) is a kind of non-volatility memorizer (Non-Volatile Memory, is called for short NVM).Embedded flash memory is a kind of flash type being integrated in other design, it is possible to by controlling ground Location, positions internal storage unit, and by the digital independent that low bit is wide, reading manner leads to random access memory on sheet With.

In actual applications, embedded flash memory is widely used in active equipment and non-active equipment, such as, commonly used In on-chip system chip (System On Chip is called for short SOC).

Active equipment has been often referred to access supply network, high to performance requirement, lower slightly to power consumption requirements.Non-active equipment leads to Do not access supply network in often using, use the equipment of rechargable power supplies, very sensitive to power consumption situation in the application.Common SOC in non-active equipment, a key index of its design is to the dynamic power consumption of each module in system application, The generally power consumption to embedded flash memory also has the requirement that comparison is high.

The principle of flash data elementary cell determines, needs to apply lasting high voltage differential in corresponding data cell, To realize data cell write or erase process.And in flash memory design structure, use the method for dual charge pump to be formed Continuous high-pressure is a kind of common method for designing, it is possible to the voltage difference required for efficiently providing.But this dual charge pump structure Drawback is, electric charge pump, output voltage climbs when, brings the highest dynamic power consumption, improve whole flash memory circuit with And the circuit power consumption of whole SOC, reduce the performance of whole SOC.

Refer to traditional dual charge pump control signal that Fig. 1, Fig. 1 are embedded flash memory in prior art.Such as Fig. 1 institute Show, be typically embedded in formula flash memory circuit structure in two the electric charge pumps used usual for producing the electric charge pump of positive high voltage (VPOS) Being referred to as malleation electric charge pump, be expressed as PUMP_VPOS in figure, the electric charge pump being used for producing negative high voltage (VNEG) is commonly referred to negative pressure electricity Lotus pump, is expressed as PUMP_VNEG in figure.Electric charge pump is by acting on formation output height while enabling signal and pump pressure clock Pressure, the pump pressure clock of two electric charge pumps generally uses identical clock source, the SOC outside flash memory circuit provides.When making When energy signal is effective, electric charge pump is charged along with the change of pump pressure clock signal, and output voltage is continuous also with charging process Climb, reach required voltage.

In order to reduce during charge pump voltage is set up the dynamic power consumption formed, common flash memory design structure uses electric charge The method controlling to start fixed by pump: first starts an electric charge pump, after postponing one period of set time, restarts another one electric charge Pump, thus by setting up while avoiding two electric charge pumps, the too high dynamic power consumption caused.

But, such method brings problematically, use regular time difference both cannot be adapted in actual application Practical situation under different process, temperature, voltage conditions, can only guard and estimate, causes long circuit latencies, shadow Rung the performance of whole chip, meanwhile, also cannot dynamic application in different applied environments.

Summary of the invention

In order to overcome problem above, it is desirable to provide the control electrical appliances for electric charge pump structure of a kind of embedded flash memory, for Avoid the high dynamic power consumption problem that electric charge pump causes during Voltage Establishment, and reduce under conditions of power consumption allows simultaneously Voltage time, thus improve chip performance.

It is to say, the invention discloses the control electrical appliances for electric charge pump of a kind of configurable suppression dynamic power consumption, it is possible to effectively Reduce the electric charge pump dynamic power consumption at the embedded flash memory circuit of start-up course.

For achieving the above object, technical scheme is as follows:

The present invention provides the control electrical appliances for electric charge pump structure of a kind of embedded flash memory, and it includes electric charge pump control unit, electricity Lotus pump control unit is for by being pumped clock to producing the malleation electric charge pump of positive high voltage and producing the negative pressure electric charge pump of negative high voltage Carry out Voltage Establishment；Described electric charge pump control unit is according to the outside dynamic power consumption configuration information provided of flash memory circuit and malleation Electric charge pump and negative pressure electric charge pump enable signal, and pump pressure clock is carried out Validity control, and by aligning piezoelectricity lotus pump and negative pressure The output voltage of electric charge pump detects, it determines malleation electric charge pump and negative pressure electric charge pump status, the positive piezoelectricity of setting respectively The pump pressure clock frequency control flow process of lotus pump and negative pressure electric charge pump, in Voltage Establishment process, implements pump pressure clock frequency control respectively System, the most independent control malleation electric charge pump and the dynamic power consumption of negative pressure electric charge pump, to control embedded flash memory at electric charge pump Dynamic power consumption when output voltage is set up.

Preferably, the described Validity control that carries out pump pressure clock is align piezoelectricity lotus pump and negative pressure electric charge pump respectively defeated Going out voltage to detect, dividing potential drop result and malleation reference voltage by forward charge pump output voltage compare, and use ratio Relatively result mark malleation electric charge pump operation state, and negative pressure electric charge pump is carried out logic control, self adaptation triggers negative pressure electric charge pump Enable；The described the most independent dynamic power consumption controlling malleation electric charge pump and negative pressure electric charge pump respectively is defeated by negative pressure electric charge pump Go out voltage result to compare with negative pressure reference voltage, use comparative result mark negative pressure electric charge pump operation state, control Negative pressure electric charge pump pump pressure clock frequency, and together control the pump pressure of malleation electric charge pump with malleation charge pump output voltage comparative result Clock frequency, Self Adaptive Control malleation electric charge pump and the dynamic power consumption of negative pressure electric charge pump.

Preferably, described electric charge pump control unit includes that malleation charge pump voltage testing circuit, negative pressure charge pump voltage are examined Slowdown monitoring circuit, electric charge pump enable signal generating circuit, pump pressure clock division circuits and electric charge pump pump pressure clock source generating circuit, its In: described malleation charge pump voltage testing circuit, it is connected with malleation charge pump output voltage, to described malleation electric charge pump output electricity After pressure dividing potential drop compared with malleation reference voltage, obtain voltage detecting result, output to electric charge pump enable signal generating circuit and Electric charge pump pump pressure clock source generating circuit；Described negative pressure charge pump voltage testing circuit, is connected with negative pressure charge pump output voltage, To after described negative pressure charge pump output voltage dividing potential drop compared with negative pressure reference voltage, obtain voltage detecting result, output is to electricity Lotus pump pump pressure clock source generating circuit；Described electric charge pump enables signal generating circuit, and transmission input enables signal to malleation electric charge Pump, produces negative pressure electric charge pump by malleation charge pump output voltage comparative result and enables signal, be transferred to negative pressure electric charge pump；Described Pump pressure clock division circuits, by the pump pressure clock of input according to enable signal differentiate filter, and produce needed for different Clock division signal, is transferred to electric charge pump pump pressure clock source generating circuit；Described electric charge pump pump pressure clock source generating circuit, according to Outside personalized setting and the comparative result of malleation charge pump output voltage, select the pump pressure clock of malleation electric charge pump input Signal；According to flash memory circuit outside provide dynamic power consumption configuration information, the comparative result of malleation charge pump output voltage and The comparative result of negative pressure charge pump output voltage, selects the pump pressure clock signal of negative pressure electric charge pump input.

Preferably, input pump pressure clock signal is controlled by described pump pressure clock division circuits, only enables at electric charge pump Pump pressure clock signal can be transmitted, shielded signal under the non-enabled state of electric charge pump under state；Described pump pressure clock division circuits pair The triggering state of register reset signal is controlled, and only can realize resetting under the non-enabled state of electric charge pump, make at electric charge pump Reset signal can be shielded under state.

Preferably, described electric charge pump pump pressure clock source generating circuit open pump pressure during charge pump output voltage is set up Clock frequency configuration control access, closes clock frequency control path after charge pump output voltage is stable, uses input clock Frequency.

Preferably, dynamic power consumption span of control when described malleation electric charge pump or negative pressure electric charge pump being set up be 12.5%～ 100%.

From technique scheme it can be seen that the control electrical appliances for electric charge pump structure of the embedded flash memory of the present invention, it includes Electric charge pump control unit；Electric charge pump control unit includes malleation charge pump voltage testing circuit, negative pressure charge pump voltage detection electricity Road, electric charge pump enable signal generating circuit, pump pressure clock division circuits and electric charge pump pump pressure clock source generating circuit；It is according to sudden strain of a muscle Deposit dynamic power consumption configuration information that circuit external provides and malleation electric charge pump and negative pressure electric charge pump enable signal, to pump pressure clock Carry out Validity control, and detect by aligning the output voltage of piezoelectricity lotus pump and negative pressure electric charge pump, it determines malleation electric charge Pump and negative pressure electric charge pump status, the malleation electric charge pump of setting and the pump pressure clock frequency control stream of negative pressure electric charge pump respectively Journey, in Voltage Establishment process, implements pump pressure clock frequency control respectively, the most independently controls malleation electric charge pump and negative pressure electricity The dynamic power consumption of lotus pump, to control the embedded flash memory dynamic power consumption when charge pump output voltage is set up.

Accompanying drawing explanation

Fig. 1 show control electrical appliances for electric charge pump state machine diagram in prior art

Fig. 2 show control electrical appliances for electric charge pump state machine diagram of the present invention

Fig. 3 show charge pump control signal schematic diagram of the present invention

Fig. 4 show control electrical appliances for electric charge pump signal graph

Fig. 5 show control electrical appliances for electric charge pump (PUMP_CONTROL) structural representation

Fig. 6 show malleation charge pump voltage testing circuit (VPOS_MEASURE) structural representation

Fig. 7 show malleation charge pump voltage testing circuit (VPOS_MEASURE) structural representation

Fig. 8 show electric charge pump and enables signal generating circuit (PUMP_EN_GEN) structural representation

Fig. 9 show pump pressure clock division circuits (PCLK_DIV) structural representation

Figure 10 show electric charge pump pump pressure clock source generating circuit (PUMP_CK_GEN) structural representation

Detailed description of the invention

Embodiment feature of present invention will describe with the embodiment of advantage in the explanation of back segment in detail.It it should be understood that the present invention Can have various changes in different examples, it neither departs from the scope of the present invention, and explanation therein and being shown in Substantially as purposes of discussion, and it is not used to limit the present invention.

As it was previously stated, the electric charge pump control unit that the present invention includes, for by pump pressure clock to generation positive high voltage just The negative pressure electric charge pump of piezoelectricity lotus pump and generation negative high voltage carries out Voltage Establishment；Described electric charge pump control unit is according to outside flash memory circuit The dynamic power consumption configuration information of portion's offer and malleation electric charge pump and negative pressure electric charge pump enable signal, carry out pump pressure clock effectively Property control, and detect by aligning the output voltage of piezoelectricity lotus pump and negative pressure electric charge pump, it determines malleation electric charge pump and negative pressure Electric charge pump status respectively, the malleation electric charge pump of setting and the pump pressure clock frequency control flow process of negative pressure electric charge pump, at voltage Setting up process, enforcement is pumped moving of clock frequency control, difference the most independent control malleation electric charge pump and negative pressure electric charge pump respectively State power consumption, to control the embedded flash memory dynamic power consumption when charge pump output voltage is set up.

The ultimate principle that electric charge pump control unit of the present invention realizes is as follows:

It will be apparent to those skilled in the art that the dynamic power model of the embedded flash memory of dual charge pump structure can use following public affairs Formula represents:

P_total=P_pumppos+P_pumpneg+P_others

In formula:

P_totalFor total power consumption

P_pumpposFor malleation electric charge pump power consumption

P_pumpnegFor negative pressure electric charge pump power consumption

P_othersPower consumption for other module

Owing to worst power consumption depends on the start-up course of dual charge pump, amendment above formula can be approximated as follows:

P_total≈P_pumppos+P_pumpneg

According to the operation principle of electric charge pump, when enabling signal and being effective, electric charge pump sets up the dynamic of process at output voltage Power consumption is similar to proportional relation with the pump pressure clock signal frequency of input charge pump, and the power consumption formula of corresponding positive/negative-pressure electric charge pump is such as Under:

P_pumppos≈αf_posck+P_poslkg

P_pumpneg≈βf_negck+P_neglkg

In formula:

P_poslkgAnd P_neglkgIt is malleation electric charge pump and the electricity leakage power dissipation of negative pressure electric charge pump respectively, is approximately constant；α and β divides Not Wei the relation of power consumption and pump pressure clock frequency of malleation electric charge pump and negative pressure electric charge pump, approximation can regard constant as, its occurrence Relevant with charge pump design.

f_posckAnd f_negckBe respectively malleation electric charge pump and negative pressure electric charge pump be effectively pumped clock frequency, concrete value is such as Following formula:

$f_{posck}=\left\{\begin{array}{cc}{f}_{pumppos-ck-in}& pumpposen=1\\ 0& pumpposen=0\end{array}\right.$

$f_{negck}=\left\{\begin{array}{cc}{f}_{pumpneg-ck-in}& pumpnegen=1\\ 0& pumpnegen=0\end{array}\right.$

When electric charge pump enables, effectively pump pressure clock frequency is front pump voltage-frequency rate, clock frequency when being effectively pumped during non-enable Rate is 0.

Therefore, embedded flash memory total power consumption situation at this moment can be expressed from the next with pump pressure type medium frequency relation: P_total ≈αf_posck+βf_negck+(P_poslkg+P_neglkg)

As it was previously stated, variable only includes f in formula_posckAnd f_negck, only enable situation and incoming frequency with electric charge pump has Close.The present invention is by carrying out Self Adaptive Control to the effectively pump pressure clock frequency of electric charge pump, it is achieved that the dynamic merit of embedded flash memory The reduction of consumption.

In order to be adapted under the conditions of different application the requirement to dynamic power consumption, the present invention devises one and is applicable to double charge The configurable control electrical appliances for electric charge pump of pump embedded flash memory, in can applying according to reality, the requirement to dynamic power consumption is joined Put, it is achieved on sheet, configurable dynamic power consumption is automatically adjusted.

Below in conjunction with accompanying drawing 2-10, by specific embodiment, the electric charge pump of a kind of embedded flash memory of the present invention is controlled electricity Line structure is described in further detail.Before narration, input and output signal and function thereof are defined as follows:

1., input signal and function

Power supply signal VPWR

Ground signalling VGND

Reset signal RST: reset for frequency-dividing clock state

Basis pump pressure clock signal PCLK: as the pump pressure clock of benchmark, its clock frequency is f_pclk

Enable signal PE: be responsible for function on

Charge pump output voltage VPOS, VNEG: be used for monitoring charge pump state

Reference voltage VREF0 and VREF1: for the reference of the detection of charge pump output signal VPOS and VNEG

Electric charge pump dynamic power consumption configuration TRIM_POS_CK and TRIM_NEG_CK: be used for configuring electric charge pump in the start-up conditions Power consumption configurations

2., output signal and function:

Malleation electric charge pump enables signal POS_EN

Malleation electric charge pump pump pressure clock POS_CK

Negative pressure electric charge pump enables signal NEG_EN

Negative pressure electric charge pump pump pressure clock NEG_CK

Refer to Fig. 2, Fig. 2 and show control electrical appliances for electric charge pump state machine diagram of the present invention.As it can be seen, embedded sudden strain of a muscle Deposit in two the electric charge pumps used in circuit structure and be commonly referred to malleation electric charge pump for producing the electric charge pump of positive high voltage (VPOS), Being expressed as PUMP_VPOS in figure, the electric charge pump being used for producing negative high voltage (VNEG) is commonly referred to negative pressure electric charge pump, is expressed as in figure PUMP_VNEG.In an embodiment of the present invention, by the control to effectively pump pressure clock, single electric charge pump startup electric current is entered Row controls, thus makes electric charge pump dynamic power consumption the most controlled, meets application system according to actual application conditions independently to power consumption Controlling, dynamic power consumption span of control when setting up single electric charge pump is 12.5%～100%.

Incorporated by reference to Fig. 2 refering to such as following table, control electrical appliances for electric charge pump have 6 states:

Each running status of the present invention and handover mechanism be as shown in Figure 2:

1., when, after power initiation, reaching START condition；

2., when receiving RST=1 and PE=0, RESET state is entered: internal circuit is reset；

3., when RST signal cancel be 0 time, from RESET state enter IDLE state: wait enable signal drive；

4., when enabling signal PE=1, VPOS SETUP state is entered: malleation electric charge pump is first begin to start, corresponding pump pressure Clock frequency can be configured by outside, thus controls the dynamic power consumption under VPOS SETUP state；

5., when VPOS reaches set objective, malleation electric charge pump enters low power consumpting state, entrance VNEG SETUP state: Negative pressure electric charge pump begins setting up output voltage VNEG, can pass through the pump pressure clock frequency that exterior arrangement is corresponding, controls negative pressure and sets up Time dynamic power consumption；

6., when VNEG also reaches given voltage, then entrance VPOS/VNEG STABLE state: malleation and negative pressure electric charge pump All having reached stable power consumption, the pump pressure clock of two electric charge pumps all switches to PCLK, it is ensured that the stability of output voltage；

7., working as PE=0, state switches back into IDLE state from VPOS/VNEG STABLE: the enable signal of two electric charge pumps All stop with pump pressure clock signal.

Referring to Fig. 3 and Fig. 4, Fig. 3 and show charge pump control signal schematic diagram of the present invention, Fig. 4 show electric charge pump control Circuit signal figure processed.Below some design details in the embodiment of the present invention are described in detail:

1., the detection of electric charge pump state

Pump pressure clock is carried out Validity control is that the output voltage aligning piezoelectricity lotus pump and negative pressure electric charge pump respectively is carried out Detection, dividing potential drop result and malleation reference voltage by forward charge pump output voltage compare, and use comparative result mark Malleation electric charge pump operation state, and negative pressure electric charge pump is carried out logic control, self adaptation triggers the enable of negative pressure electric charge pump.

The state of electric charge pump can be described as being not enabled on, Voltage Establishment and three kinds of states of voltage stabilization, wherein electric charge pump When dynamic power consumption is set up with output voltage the highest, dynamic power consumption now is relevant with self driving force of electric charge pump；And when output When voltage reaches designated value, dynamic power consumption is the most relevant with the load of electric charge pump.The present invention is by the output voltage to electric charge pump Detect, it determines electric charge pump status.

The recognition methods of malleation electric charge pump state is as follows: by the dividing potential drop of forward voltage VPOS and the ratio of reference voltage Relatively, produce corresponding voltage identification signal POS_VHI, by POS_VHI is detected, it is judged that whether the state of positive charge pump reaches Stable.The dividing potential drop of VPOS is in original state less than VREF0, and testing result POS_VHI is 0；After VPOS reaches designated value, i.e. When the dividing potential drop of VPOS is equal to VREF0, POS_VHI saltus step is 1.

The voltage detection signal expression formula of malleation electric charge pump is as follows:

$POS\_VHI=\left\{\begin{array}{cc}1& V_{REF0}\≤n\×V_{POS}\\ 0& V_{REF0}>n\×V_{POS}\end{array}\right.$

In formula: n is the dividing ratios of VPOS.

The detection of negative pressure electric charge pump state is similar to the detection method of malleation electric charge pump.The output voltage of negative pressure electric charge pump leads to After crossing dividing potential drop, compare with the reference voltage VREF1 of input, obtain the mark voltage NEG_VLO of VNEG, under original state NEG_VLO is 0, and as VNEG reaches required voltage value, then NEG_VLO is set to 1, and expression formula is as follows:

$NEG\_VLO=\left\{\begin{array}{cc}1& V_{REF1}\&GreaterEqual;p\&times;V_{NEG}\\ 0& V_{REF1}<p\&times;V_{NEG}\end{array}\right.$

In formula: p is the relatively more required dividing ratios of VNEG.

The most independent dynamic power consumption controlling malleation electric charge pump and negative pressure electric charge pump is to be exported by negative pressure electric charge pump respectively Voltage result compares with negative pressure reference voltage, uses comparative result mark negative pressure electric charge pump operation state, controls negative Piezoelectricity lotus pump pump pressure clock frequency, and when together controlling the pump pressure of malleation electric charge pump with malleation charge pump output voltage comparative result Clock frequency rate, Self Adaptive Control malleation electric charge pump and the dynamic power consumption of negative pressure electric charge pump.

2., the generation enabling signal of malleation electric charge pump:

The enable signal of malleation electric charge pump is consistent with the enable PE signal of input, and expression formula is as follows:

POS_EN=PE

3., the generation of negative pressure electric charge pump enable signal NEG_EN:

Negative pressure electric charge pump enables signal by enabling the common effect of signal PE and POS_VHI with outside, it is achieved negative pressure electricity The delay start of lotus pump, expression is as follows:

NEG_EN=PE&POS_VHI

4. the frequency dividing of clock signal PCLK, it is pumped

The present invention realizes first input pump pressure clock signal being done effectiveness and filters, when producing internal pump pressure in inside Clock signal CK_ORI, expression formula is as follows:

CK_ORI=PE&PCLK

As shown in above-mentioned expression formula, as PE=1, operating frequency f of CK_ORI and the pump pressure signal PCLK mono-of input Cause identical, for f_pclk.Meanwhile, 2 fractional frequency signal CK_D2,4 fractional frequency signal CK_D4 and 8 points are produced based on CK_ORI inside the present invention Frequently signal CK_D8, corresponding operating frequency is respectively f_pclk/2、f_pclk/4And f_pclk/8。

5., the generation of pump pressure clock signal POS_CK of malleation electric charge pump:

During Voltage Establishment, the pump pressure clock of forward electric charge pump uses P_STP_CK, can pass through TRIM_POS_CK signal Select the corresponding pump pressure clock signal used when the output voltage of malleation electric charge pump is set up, when TRIM_POS_CK inputs 0 respectively ～when 3, P_STP_CK chooses CK_D8, CK_D4, CK_D2, CK_ORI, corresponding expression formula to be respectively:

The pump pressure clock signal of malleation electric charge pump will be switched to CLK_ORI.

The expression formula of POS_CK is as follows:

6., the generation of pump pressure clock signal NEG_CK of negative pressure electric charge pump:

During Voltage Establishment, the pump pressure clock of negative sense electric charge pump uses N_STP_CK, can be believed by TRIM_NEG_CK Number select the corresponding pump pressure clock signal used when the output voltage of negative pressure electric charge pump is set up, when TRIM_NEG_CK is the most defeated When entering 0～3, N_STP_CK chooses CK_D8, CK_D4, CK_D2, CK_ORI, corresponding expression formula to be respectively:

$N\_STP\_CK=\left\{\begin{array}{cc}CK\_ORI& TRIM\_NEG\_CK=3\\ CK\_D2& TRIM\_NEG\_CK=2\\ CK\_D4& TRIM\_NEG\_CK=1\\ CK\_D8& TRIM\_NEG\_CK=0\end{array}\right.$

When state is switched to VPOS/VNEG STABLE, the pump pressure clock signal of negative pressure electric charge pump will be switched to CLK_ ORI。

The expression formula of NEG_CK is as follows:

Refer to Fig. 5, Fig. 5 and show control electrical appliances for electric charge pump (PUMP_CONTROL) structural representation.Electric charge pump controls Unit include malleation charge pump voltage testing circuit, negative pressure charge pump voltage testing circuit, electric charge pump enable signal generating circuit, Pump pressure clock division circuits and electric charge pump pump pressure clock source generating circuit, wherein: malleation charge pump voltage testing circuit, with malleation Charge pump output voltage be connected, to after described malleation charge pump output voltage dividing potential drop compared with malleation reference voltage, obtain electricity Pressure testing result, output to electric charge pump enables signal generating circuit and electric charge pump pump pressure clock source generating circuit；Negative pressure electric charge pump Voltage detecting circuit, is connected with negative pressure charge pump output voltage, to electric with negative pressure reference after negative pressure charge pump output voltage dividing potential drop Pressure compares, and obtains voltage detecting result, and output to electric charge pump is pumped clock source generating circuit；Described electric charge pump enables signal and produces Raw circuit, transmission input enable signal, to malleation electric charge pump, produces negative pressure electricity by malleation charge pump output voltage comparative result Lotus pump enables signal, is transferred to negative pressure electric charge pump；Described pump pressure clock division circuits, by the pump pressure clock of input according to enabling letter Number differentiation is filtered, and the different clock division signal needed for producing, and is transferred to electric charge pump pump pressure clock source generating circuit； Described electric charge pump pump pressure clock source generating circuit, according to outside personalized setting and the comparison of malleation charge pump output voltage As a result, the pump pressure clock signal of malleation electric charge pump input is selected；According to flash memory circuit outside provide dynamic power consumption configuration information, The comparative result of malleation charge pump output voltage and the comparative result of negative pressure charge pump output voltage, select negative pressure electric charge pump defeated The pump pressure clock signal entered.

It is to say, malleation charge pump voltage testing circuit, negative pressure charge pump voltage testing circuit, electric charge pump enable signal Produce circuit, pump pressure clock division circuits and electric charge pump pump pressure clock source generating circuit, it is possible to self adaptation triggers malleation electric charge pump Startup with negative pressure electric charge pump.Signal (pump enable signal), pump pressure clock division electricity is enabled when receiving electric charge pump Starting working in road, produces frequency-dividing clock (Generated clocks) according to reference clock (Reference clock) and be transferred to Electric charge pump pump pressure clock source generating circuit.

Meanwhile, electric charge pump enables signal generating circuit and produces malleation electric charge pump enable signal (pump_vpos enable), Drive malleation electric charge pump.Further, electric charge pump pump pressure clock source generating circuit is according to clock setting (clock settings), from dividing Frequently selecting positive high voltage (VPOS) to set up the reference clock (clock for pump_vpos) required for process in clock, VPOS enters Enter to set up process.Malleation charge pump voltage testing circuit is to the dividing potential drop of VPOS and reference voltage 0 (Reference voltage 0) Detect, produce corresponding detection signal (VPOS measure result).When VPOS reaches required voltage, examine accordingly Survey signal overturns, and electric charge pump enables signal generating circuit and produces negative charge pump enable signal (Pump_vneg enable), simultaneously Electric charge pump pump pressure clock source generating circuit selects to provide negative pressure electric charge pump reference clock (clock for according to clock configuration information pump_vneg).Negative pressure charge pump voltage testing circuit is to the dividing potential drop of VNEG and reference voltage 1 (Reference voltage 1) Comparing, produce corresponding detection of negative pressure signal (Vneg measure result), VNEG enters and sets up process.When VNEG reaches After rated voltage, detection of negative pressure signal overturns, and now VPOS/VNEG reaches stable, that positive/negative-pressure electric charge pump uses clock Frequency error factor is to reference clock frequency.

Specifically, malleation charge pump voltage testing circuit VPOS_MEASURE, negative pressure electricity is included inside PUMP CONTROL Lotus pump voltage testing circuit VNEG_MEASURE, electric charge pump enable signal generating circuit PUMP_EN_GEN, pump pressure clock division electricity Road PCLK_DIV and electric charge pump pump pressure clock source generating circuit PUMP_CK_GEN.The inside annexation of PUMP CONTROL is such as Shown in following table:

Source module	Port	Purpose module	Port
				Input port	PE	PUMP_EN_GEN	PE
Input port	PE	PCLK_DIV	PE
				Input port	VPOS	VPOS_MEASURE	VPOS
Input port	VREF0	VPOS_MEASURE	VREF0
				Input port	VNEG	VNEG_MEASURE	VNEG
Input port	VREF1	VNEG_MEASURE	VREF1
				Input port	PCLK	PCLK_DIV	PCLK
Input port	RST	PCLK_DIV	RST
				Input port	TRIM_POS_CK[1:0]	PUMP_CK_GEN	TRIM_POS_CK[1:0]
Input port	TRIM_NEG_CK[1:0]	PUMP_CK_GEN	TRIM_NEG_CK[1:0]
				VPOS_MEASURE	POS_VHI	PUMP_EN_GEN	POS_VHI
VPOS_MEASURE	POS_VHI	PUMP_CK_GEN	POS_VHI
				VNEG_MEASURE	NEG_VLO	PUMP_CK_GEN	NEG_VLO
PCLK_DIV	CK_ORI	PUMP_EN_GEN	CK_ORI
				PCLK_DIV	CK_D2	PUMP_EN_GEN	CK_D2
PCLK_DIV	CK_D4	PUMP_EN_GEN	CK_D4
				PCLK_DIV	CK_D8	PUMP_EN_GEN	CK_D8
PUMP_EN_GEN	POS_EN	Output port	POS_EN
				PUMP_EN_GEN	NEG_EN	Output port	NEG_EN
PUMP_CK_GEN	POS_CK	Output port	POS_CK
				PUMP_CK_GEN	NEG_CK	Output port	NEG_CK

Refer to Fig. 6, Fig. 6 and show malleation charge pump voltage testing circuit (VPOS_MEASURE) structural representation.As Shown in figure, the circuit structure of VPOS_MEASURE includes basic resistive module R0, basic resistive module R1, and voltage comparator COMP0, wherein, R0 and R1 is responsible for carrying out dividing potential drop from VPWR to VPOS, and its resistance proportion sets and reference voltage VREF0 phase Closing, dividing potential drop result VPOS_DIV input voltage comparator COMP0 with VREF0 compares, and comparative result is defeated by POS_VHI port Go out.

Concrete annexation see table:

Source module	Port	Purpose module	Port
				Input port	VPOS	R0	VPOS
Input port	VREF0	COMP0	VREF0
				Input port	VPWR	R1	VPWR
R0	VPOS_DIV	R1	VPOS_DIV
				R0	VPOS_DIV	COMP0	VPOS_DIV
R1	VPOS_DIV	COMP0	VPOS_DIV
				COMP0	POS_VHI	Output port	POS_VHI

Refer to Fig. 7, Fig. 7 and show malleation charge pump voltage testing circuit (VPOS_MEASURE) structural representation.As Shown in figure, the circuit structure of VNEG_MEASURE includes basic resistive module R2, basic resistive module R3, and voltage comparator COMP1, wherein R2 and R3 is responsible for carrying out dividing potential drop from VGND to VNEG, and its resistance proportion sets relevant to reference voltage VREF1, Dividing potential drop result VNEG_DIV input voltage comparator COMP1 with VREF1 compares, and comparative result is exported by NEG_VLO port.

Concrete annexation see table:

Source module	Port	Purpose module	Port
				Input port	VNEG	R3	VNEG
Input port	VREF1	COMP1	VREF1
				Input port	VGND	R2	VGND
R3	VNEG_DIV	R2	VNEG_DIV
				R2	VNEG_DIV	COMP1	VNEG_DIV
R3	VNEG_DIV	COMP1	VNEG_DIV
				COMP1	NEG_VLO	Output port	NEG_VLO

Refer to Fig. 8, Fig. 8 and show electric charge pump enable signal generating circuit (PUMP_EN_GEN) structural representation.Such as figure Shown in, the circuit structure of PUMP_EN_GEN such as inside employs one 2 input and door AND3, and input is respectively connected to PE and POS_ VHI, operation result is exported by NEG_EN.Output port POS_EN is directly connected with PE.

Concrete annexation see table:

Source module	Port	Purpose module	Port
				Input port	PE	Output port	POS_EN
Input port	PE	AND3	PE
				Input port	POS_VHI	AND3	POS_VHI
AND3	NEG_EN	Output port	NEG_EN

Refer to Fig. 9, Fig. 9 and show pump pressure clock division circuits (PCLK_DIV) structural representation.The electricity of PCLK_DIV Line structure.As it is shown in figure 9, its internal 22 inputs and door AND0 and AND1 of using, 1 phase inverter and 3 d type flip flop DFF0, DFF1、DFF2.AND0 inputs PCLK and PE, and operation result is exported by CLK_ORI, is simultaneously connected with the clock port of DFF0.PE PE_B signal is produced, as 1 input of AND2 by phase inverter.The another one of AND2 enters through port RST input, fortune Calculate result RST_DFF and be connected respectively to the replacement port RST of DFF0, DFF1 and DFF2.The anti-phase output of DFF0, DFF1 and DFF3 Port QB is connected with the input port D of oneself respectively.The output port Q of DFF0 is connected to the clock port CK of DFF1, connects simultaneously Receive the output of CK_D2 port.The output port Q of DFF1 is connected to the clock port CK of DFF2, is simultaneously connected to CK_D4 port defeated Go out.The output port Q of DFF2 is connected to the output of CK_D8 port.

Concrete annexation see table:

Source module	Port	Purpose module	Port
				Input port	PCLK	AND0	PCLK
Input port	PE	Phase inverter	PE
				Input port	PE	AND0	PE
Input port	RST	AND1	RST
				Phase inverter	PE_B	AND1	PE_B
AND1	RST_DFF	DFF0	RST
				AND1	RST_DFF	DFF1	RST
AND1	RST_DFF	DFF2	RST
				AND0	CK_ORI	Output port	CK_ORI
AND0	CK_ORI	DFF0	CK
				DFF0	Q	DFF1	CK
DFF1	Q	DFF2	CK
				DFF0	QB	DFF0	D
DFF1	QB	DFF1	D
				DFF2	QB	DFF2	D
DFF0	Q	Output port	CK_D2
				DFF1	Q	Output port	CK_D4
DFF2	Q	Output port	CK_D8

Refer to Figure 10, Figure 10 and show electric charge pump pump pressure clock source generating circuit (PUMP_CK_GEN) structural representation. As it can be seen, the circuit structure of PUMP_CK_GEN employs 24 input MUX MUX1 and MUX3,22 input multichannels Selector MUX2 and MUX4,12 input and door AND2.4 option input signals of MUX1 connect input port CLK_ respectively ORI, CLK_D2, CLK_D4, CLK_D8, select signal to connect input port TRIM_POS_CK [1:0], output signal CK_STP_ P connects 1 option input signal of MUX2.Other 1 option input signal of MUX2 connects input signal CK_ORI, selects defeated Entering signal and connect input signal NEG_VLO, result is exported by port PO S_CK.

Two inputs of AND2 connect the selection that NEG_VLO and POS_VHI, operation result STP_DONE connect MUX4 respectively Signal.4 option input signals of MUX3 connect input port CLK_ORI, CLK_D2, CLK_D4, CLK_D8 respectively, select letter Number connect input port TRIM_NEG_CK [1:0], output signal CK_STP_P connect MUX2 1 option input signal.MUX4 Other 1 option input signal connect input signal CK_ORI, select input signal to connect AND2 output signal STP_DONE, Result is exported by port NEG_CK.

Concrete annexation see table:

Source module	Port	Purpose module	Port
				Input port	CK_D2	MUX1	CK_D2
Input port	CK_D4	MUX1	CK_D4
				Input port	CK_D8	MUX1	CK_D8
Input port	CK_ORI	MUX1	CK_ORI
				Input port	CK_D2	MUX3	CK_D2
Input port	CK_D4	MUX3	CK_D4
				Input port	CK_D8	MUX3	CK_D8
Input port	CK_ORI	MUX3	CK_ORI
				Input port	CK_ORI	MUX2	CK_ORI
Input port	CK_ORI	MUX4	CK_ORI
				Input port	POS_VHI	AND2	POS_VHI
Input port	NEG_VLO	AND2	NEG_VLO
				Input port	NEG_VLO	MUX2	NEG_VLO
Input port	TRIM_POS_CK[1:0]	MUX1	TRIM_POS_CK[1:0]
				Input port	TRIM_NEG_CK[1:0]	MUX3	TRIM_NEG_CK[1:0]
MUX1	CK_STP_P	MUX2	CK_STP_P
				MUX3	CK_STP_N	MUX4	CK_STP_N
AND2	STP_DONE	MUX4	STP_DONE
				MUX4	NEG_CK	Output port	NEG_CK
MUX2	POS_CK	Output port	POS_CK

In sum, the present invention is directed to the power problems in embedded flash memory application, disclosing a kind of dynamic power consumption can join The embedded flash memory control electrical appliances for electric charge pump put, has the advantage that

1. the dynamic power consumption, making embedded flash memory is controlled:

The applied environment of embedded flash memory is varied, under the most different applied environments to the demand of performance and power consumption not With.When being applied in active equipment, higher to performance requirement；And when being applied in inactive component, often to dynamic power consumption Require higher.Different from being commonly designed, single electric charge pump startup electric current, by the control to effectively pump pressure clock, is entered by the present invention Row controls, thus makes electric charge pump dynamic power consumption the most controlled, meets application system according to actual application conditions independently to power consumption Controlling, dynamic power consumption span of control when setting up single electric charge pump is 12.5%～100%.

2., can be according to electric charge pump operation state, automatic switchover electric charge pump startup state, it is achieved various processes/voltage/ At a temperature of the self-adapting start sequential of electric charge pump:

Owing to being affected by voltage, technique, temperature, signal stabilization many factors during electric charge pump startup simultaneously, therefore exist The startup time change of electric charge pump often differs greatly, and faces bigger difficulty, delay time when estimating electric charge pump startup time delay The too high dynamic power consumption that deficiency causes, or delay time long cause again because start overlong time formed waist performance.

Autonomous test by the charge pump output voltage in the present invention, it is possible to directly electric charge pump output result is sentenced Disconnected, time difference can be set up by self adaptation electric charge pump under various circumstances simultaneously, minimize and set up from a charge pump voltage Finish the switching time to another electric charge pump startup.

3., by the effectiveness of pump pressure clock signal and reset signal is filtered, electric charge pump is reduced in the standby state Circuit uncertainty and dynamic power consumption, and shield the improper replacement under electric charge pump state:

It will be apparent to those skilled in the art that pump pressure clock is generally provided by application system, due to design limitation, clock source is not Definitiveness is the highest, can cause electric charge pump power consumption in the standby state, actual influence to the stability within circuit and application core The dynamic power consumption of sheet.

By to pump pressure filtered clock signal, making input signal under electric charge pump holding state more stable, reduce internal signal Unstable situation, and the power consumption brought.During electric charge pump startup, the instability of the reset signal of input, may Affect the duty of electric charge pump, the present invention shields charge pump voltage and sets up the reset operation of process, it is to avoid improper heavy Put operation and charge pump voltage is set up the impact of process.

Above is only embodiments of the invention, and embodiment is also not used to limit the scope of patent protection of the present invention, therefore The equivalent structure change that the description of every utilization present invention and accompanying drawing content are made, in like manner should be included in the protection of the present invention In the range of.

Claims (6)

1. the control electrical appliances for electric charge pump structure of an embedded flash memory, it is characterised in that including: electric charge pump control unit, it is used In by pump pressure clock, the malleation electric charge pump producing positive high voltage being carried out Voltage Establishment with the negative pressure electric charge pump producing negative high voltage；Institute State electric charge pump control unit according to the outside dynamic power consumption configuration information provided of flash memory circuit and malleation electric charge pump and negative pressure electricity Lotus pump enables signal, and pump pressure clock carries out Validity control, and by aligning the output electricity of piezoelectricity lotus pump and negative pressure electric charge pump Pressure detects, it determines malleation electric charge pump and negative pressure electric charge pump status, the malleation electric charge pump of setting and negative pressure electric charge respectively The pump pressure clock frequency control flow process of pump, in Voltage Establishment process, implements pump pressure clock frequency control respectively, the most independent Control malleation electric charge pump and the dynamic power consumption of negative pressure electric charge pump, to control embedded flash memory when charge pump output voltage is set up Dynamic power consumption.

2. require described control electrical appliances for electric charge pump structure according to right 1, it is characterised in that

Described is that the output voltage aligning piezoelectricity lotus pump and negative pressure electric charge pump respectively is carried out to be pumped clock carrying out Validity control Detection, dividing potential drop result and malleation reference voltage by forward charge pump output voltage compare, and use comparative result mark Malleation electric charge pump operation state, and negative pressure electric charge pump is carried out logic control, self adaptation triggers the enable of negative pressure electric charge pump；

The described the most independent dynamic power consumption controlling malleation electric charge pump and negative pressure electric charge pump respectively is to be exported by negative pressure electric charge pump Voltage result compares with negative pressure reference voltage, uses comparative result mark negative pressure electric charge pump operation state, controls negative Piezoelectricity lotus pump pump pressure clock frequency, and when together controlling the pump pressure of malleation electric charge pump with malleation charge pump output voltage comparative result Clock frequency rate, Self Adaptive Control malleation electric charge pump and the dynamic power consumption of negative pressure electric charge pump.

Control electrical appliances for electric charge pump structure the most according to claim 1, it is characterised in that described electric charge pump control unit includes:

Malleation charge pump voltage testing circuit, negative pressure charge pump voltage testing circuit, electric charge pump enable signal generating circuit, pump pressure Clock division circuits and electric charge pump pump pressure clock source generating circuit, wherein:

Described malleation charge pump voltage testing circuit, is connected with malleation charge pump output voltage, exports described malleation electric charge pump After voltage compared with malleation reference voltage, obtaining voltage detecting result, output to electric charge pump enables signal generating circuit It is pumped clock source generating circuit with electric charge pump；

Described negative pressure charge pump voltage testing circuit, is connected with negative pressure charge pump output voltage, exports described negative pressure electric charge pump After voltage compared with negative pressure reference voltage, obtaining voltage detecting result, output to electric charge pump pump pressure clock source produces electricity Road；

Described electric charge pump enables signal generating circuit, and transmission input enable signal is to malleation electric charge pump, defeated by malleation electric charge pump Go out voltage comparative result and produce negative pressure electric charge pump enable signal, be transferred to negative pressure electric charge pump；

Described pump pressure clock division circuits, filters the pump pressure clock of input according to enabling signal differentiation, and produces required Different clock division signals, be transferred to electric charge pump pump pressure clock source generating circuit；

Described electric charge pump pump pressure clock source generating circuit, the setting personalized according to outside and malleation charge pump output voltage Comparative result, selects the pump pressure clock signal of malleation electric charge pump input；According to the outside dynamic power consumption configuration provided of flash memory circuit Information, the comparative result of malleation charge pump output voltage and the comparative result of negative pressure charge pump output voltage, select negative pressure electricity The pump pressure clock signal of lotus pump input.

4. the control electrical appliances for electric charge pump structure required according to right 3, it is characterised in that

Input pump pressure clock signal is controlled by described pump pressure clock division circuits, only can transmit under electric charge pump enabled state Pump pressure clock signal, shielded signal under the non-enabled state of electric charge pump；

The triggering state of register reset signal is controlled by described pump pressure clock division circuits, only at electric charge pump non-enable shape Can realize under state resetting, under electric charge pump enabled state, shield reset signal.

5. the control electrical appliances for electric charge pump structure required according to right 3, it is characterised in that

Described electric charge pump pump pressure clock source generating circuit open pump pressure clock frequency during charge pump output voltage is set up is joined Put control access, after charge pump output voltage is stable, closes clock frequency control path, uses input clock frequency.

6. the control electrical appliances for electric charge pump structure required according to right 3, it is characterised in that to described malleation electric charge pump or negative pressure electric charge Dynamic power consumption span of control when pump is set up is 12.5%～100%.