CN106323900A - Gas detection method based on PbSe-quantum-dot multi-wavelength near-infrared LED (Light Emitting Diode) - Google Patents
Gas detection method based on PbSe-quantum-dot multi-wavelength near-infrared LED (Light Emitting Diode) Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 53
- 238000001514 detection method Methods 0.000 title claims abstract description 44
- 238000005259 measurement Methods 0.000 claims abstract description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 49
- 238000012360 testing method Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 abstract description 52
- 238000000034 method Methods 0.000 abstract description 14
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 16
- 239000011259 mixed solution Substances 0.000 description 12
- 239000003292 glue Substances 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 11
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 8
- 238000000862 absorption spectrum Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002354 daily effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000008240 homogeneous mixture Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000004606 Fillers/Extenders Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003808 methanol extraction Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0091—Processes for devices with an active region comprising only IV-VI compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/359—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using near infrared light
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Abstract
The invention discloses a gas detection method based on a PbSe-quantum-dot multi-wavelength near-infrared LED (Light Emitting Diode). The method comprises five steps: (1) preparing the near-infrared multi-wavelength LED (1); (2) filling a gas chamber (3) with gas to be detected; (3) enabling the near-infrared multi-wavelength LED (1) to emit light after the near-infrared multi-wavelength LED (1) is powered on, wherein the light passes through a convex lens (2), passes through the gas chamber (3) and a convex lens (4) and is received by an infrared spectrometer (5); (4) carrying out standardization on the detected gas; (5) detecting concentration of the detected gas by using a standardized system, so as to achieve measurement on gas concentration. The method can achieve simultaneous detection on a variety of gases, the sensitivity is high, the stability is good, the cost is low, and the fluorescence yield is high.
Description
Technical field
The present invention relates to many gas detecting light source, semiconductor light source domain, be specifically related to a kind of many based on PbSe quantum dot
The gas detection method of wavelength near-infrared LED.
Background technology
Universal along with environmental consciousness and medical health care knowledge, people recognize for contained flammable in surrounding air and
The detection of toxic and harmful and quantitative importance.Simultaneously in the fields such as commercial production, safety of coal mines, vehicle exhaust
Gas detecting the most particularly important.And the above commercial production and everyday environments contain multiple gases, such as first more
Alkane (CH4), ammonia (NH3), carbon monoxide (CO), carbon dioxide (CO2), sulfur dioxide (SO2) etc..
The most many technology are applied to gas detecting, such as spectroscopy, electrochemistry, acoustooptics etc..Due to optical means
Have remote sensing capabilities, without chemical contamination, be easy to sampling, non-invasive measurement, highly sensitive, not by advantages such as electromagnetic interference, therefore
It is widely used.But, the detection device not only volume that optically-based method is made compared with big, sensitivity is low, poor selectivity, stable
Property is poor, and detects light source and can only launch single wavelength, or is filtered out by optical filter and need the wavelength of light source to realize
Detection to pure gas, it is impossible to meet the demand in commercial production and daily life.
Along with making rapid progress of nanoscale science and technology, its semiconductor-quantum-point technology is studied widely and is applied, due to
The exclusive advantages such as its emission spectrum with fluorescent quantum high yield and size adjustable, can be as novel light-converting material.And
Lead selenide (PbSe) quantum dot has the strongest quantum confinement and high quantum production rate (> 85% near infrared region).Therefore, closely
The field of gas detection of infrared multi-emission wavelength, PbSe quantum dot demonstrates huge potentiality as a kind of novel detection material.
Based on the problems referred to above, the volume of development of new is little, highly sensitive, good stability, low cost, realize many gas detecting
Device, contribute to promoting the further development of gas detection technology.Through searching, based on PbSe quantum dot multi-wavelength near-infrared two
The manufacture method of pole pipe (Light-Emitting Diode, write a Chinese character in simplified form LED), and it is applied to multiple gases as excitation source
The method of detection has no there is relevant report both at home and abroad.
Summary of the invention
In order to overcome volume that existing gas detecting system and technology exist compared with big, sensitivity is low, poor selectivity, stability
Differing from, cannot be carried out the problems such as many gas detecting, the present invention proposes gas detecting based on PbSe quantum dot multi-wavelength near-infrared LED
Method, according to near-infrared GAS ABSORPTION detection principle, use PbSe quantum dot multi-wavelength near-infrared LED as detection light source,
Its emission spectrum matches with tested gas near-infrared absorption spectrum, it is achieved the kind of many gases differentiates and content detection.
The present invention adopts the following technical scheme that realization, and accompanying drawings is as follows:
1, preparation method based on PbSe quantum dot multi-wavelength near-infrared LED, it is characterised in that as gas detecting light
Source, near-infrared LED preparation method based on PbSe quantum dot is as follows:
The first step, the size of calculating PbSe quantum dot: choose one or more ripples in 900nm～1600nm wave-length coverage
The long transmitting wavelength as multi-wavelength near-infrared LED, application formula 1 calculates the size of PbSe quantum dot, and wherein λ is multi-wavelength
The transmitting wavelength of near-infrared LED, unit nm, D is the size of PbSe quantum dot, unit nm, and wavelength and the number of wavelengths of selection depend on
Determine according to actual requirement；
Second step, prepare PbSe quantum dot: according to the result of calculation of the first step, prepare correspondingly-sized and quantity therewith
PbSe quantum dot, calibrates the PbSe quantum dot prepared so that it is consistent with tested gas absorption spectra；
3rd step, prepare PbSe quantum dot with without the mixed solution of shadow glue i.e. UV glue: the PbSe quantum dot prepared is divided
Not being dissolved in chloroformic solution, the PbSe after dissolving respectively mixes with UV glue mutually with chloroform mixed solution, passes through vortex mixed
After supersound process so that it is become homogeneous mixture, and remove the chloroform in mixture in a vacuum chamber；
4th step, deposition mixed solution, prepare multi-wavelength near-infrared LED 1: the mixed solution the 3rd step obtained, foundation
In mixed solution, PbSe quantum dot is deposited successively by large scale to undersized principle, uses gallium nitride i.e. GaN chip to make
For excitation source, it is deposited on GaN chip surface as first using preparing maximum sized PbSe quantum dot with UV glue mixed solution
Layer, is polished according to actual needs as suitable thickness；Then the PbSe quantum dot of a size of second is mixed molten with UV glue
Liquid is deposited on as on ground floor PbSe quantum dot layer, is polished according to actual needs as suitable thickness；Can be according to specifically
Need, to first to fourth step process repetitive operation above-mentioned, to complete the preparation of multi-wavelength near-infrared LED 1.
2, gas detection method based on PbSe quantum dot multi-wavelength near-infrared LED, it is characterised in that based on PbSe quantum
The gas detection method of some multi-wavelength near-infrared LED is:
The first step, prepare near-infrared multi-wavelength LED 1；
Second step, gas to be detected is filled in air chamber 3；
3rd step, detection light source i.e. near-infrared multi-wavelength LED 1 emit beam after switching on power, after convex lens 2, logical
The collimated light beam crossing air chamber 3 is received by infrared spectrometer 5 through convex lens 4；
4th step, tested gas is demarcated: respectively the gaseous sample of concentration known in laboratory is put into detection
System is tested, first one sample gas is put in air chamber 3, choose many group concentration and detect, will detect defeated
The concentration signal gone out carries out numerical fitting, draws the concentration formula of this kind of sample gas；Again another kind sample gas is entered to gas
In room 3, choose many group concentration and detect, the concentration signal of detection output is carried out numerical fitting, draws the second sample gas
The concentration formula of body；Realize the demarcation to gas with various successively；
5th step, utilize above-mentioned calibrated system, tested gas concentration is detected, it is achieved the survey of gas concentration
Amount.
Compared with prior art, the invention has the beneficial effects as follows:
1, gas-detecting device based on PbSe quantum dot multi-wavelength near-infrared LED of the present invention and detection method,
The detection light source used is that discrete monochromatic light, multi-emission wavelength, cost of manufacture are cheap；
2, gas-detecting device based on PbSe quantum dot multi-wavelength near-infrared LED of the present invention and detection method,
Designed system detects while can realizing multiple gases；
3, gas-detecting device based on PbSe quantum dot multi-wavelength near-infrared LED of the present invention and detection method,
Designed system sensitivity is high, good stability；
4, gas-detecting device based on PbSe quantum dot multi-wavelength near-infrared LED of the present invention and detection method,
Used cheap, fluorescent yield is high.
Accompanying drawing explanation
Fig. 1 is that the near-infrared LED of the multi-emission wavelength of the present invention prepares schematic diagram；
Fig. 2 is abosrption spectrogram and the electron microscope picture of the 4.6nm PbSe quantum dot of the present invention；
Fig. 3 is 4.6nm PbSe quantum dot light emitting spectrogram and the C of the present invention2H2Near-infrared absorption spectrum figure；
Fig. 4 is abosrption spectrogram and the electron microscope picture of the 6.1nm PbSe quantum dot of the present invention；
Fig. 5 is 6.1nm PbSe quantum dot light emitting spectrogram and the C of the present invention2H2Near-infrared absorption spectrum figure；
Fig. 6 is the detection device schematic diagram of the present invention；
Fig. 7 is the C of the present invention2H2Concentration measures concentration relationship figure with area integral graph of a relation and matched proportion density with actual；
Fig. 8 is the NH of the present invention3Concentration measures concentration relationship figure with area integral graph of a relation and matched proportion density with actual；
Fig. 9 is to use the inventive method detection C2H2PbSe quantum dot light emitting spectrum change figure；
Figure 10 is C in test result of the present invention2H2Matched proportion density measure concentration relationship figure with actual；
Figure 11 is NH in test result of the present invention3Matched proportion density measure concentration relationship figure with actual；
In figure: 1. near-infrared multi-wavelength LED；2. convex lens；The air chamber of the most a length of 30m；4. convex lens；5. infrared spectrum
Instrument.
Detailed description of the invention
Further illustrate detailed content and the detailed description of the invention thereof of the present invention below in conjunction with the accompanying drawings:
One, the present invention propose preparation method based on PbSe quantum dot multi-wavelength near-infrared LED and gas detection method,
The wavelength tunability utilizing PbSe quantum dot to launch near infrared region (by adjusting the size of quantum dot, and then controls it
The change of ejected wave length), by various sizes of PbSe quantum dot respectively with without shadow glue, (Ultraviolet Rays glue is called for short UV
Glue) carry out being mixed and made into fluorescence mixing material, it is then passed through series of process and is deposited on gallium nitride (GaN) chip, complete
The making of PbSe quantum dot multi-wavelength near-infrared LED.According to the principle of near-infrared GAS ABSORPTION detection, use PbSe quantum dot many
Wavelength near-infrared LED is as detection light source, and its emission spectrum matches with tested gas near-infrared absorption spectrum, it is achieved many gases
Kind differentiate and content detection.
Two, embodiment
Preparation method based on PbSe quantum dot multi-wavelength near-infrared LED of the present invention and the reality of gas detection method
Execute example, provide preparation implementation process and test and assay, but protection scope of the present invention is not limited to following embodiment.
Below with C2H2、NH3As a example by the detection of mixed gas, specific implementation process and test, the inspection knot of the present invention is described
Really.
1, preparation detection C2H2、NH3Two kinds of near-infrared LEDs launching wavelength
In conjunction with Fig. 1, preparation detection C2H2、NH3Two kinds of near-infrared LEDs launching wavelength method particularly includes:
The first step, choose C2H2、NH3Near-infrared centre wavelength as the transmitting wavelength of multi-wavelength near-infrared LED, according to
Two kinds of centre wavelengths calculate corresponding PbSe quantum dot size.
In conjunction with Fig. 2, Fig. 3, Fig. 4 and Fig. 5, C2H2Absorption spectrum ranges be 1500nm～1550nm, central wavelength lambda1For
1525nm；NH3Absorption spectrum ranges be 1900nm～2060nm, central wavelength lambda2For 1980nm.Institute is calculated according to formula 1
PbSe quantum dot size is needed to be respectively 4.6nm and 6.1nm.
Second step, preparing 4.6nm and 6.1nmPbSe quantum dot respectively, preparation method is as follows:
First, the ODE of the PbO (4.000mmol) of 0.892g, the OA (8.000mmol) and 12.848g of 2.600g is loaded
In 100ml there-necked flask.In the environment of nitrogen is protected, mixed solution being heated to 170 DEG C, until PbO all dissolves, solution becomes
To colourless.The TOP-Se solution (comprising 0.637gSe) of 6.9ml is injected in colourless solution rapidly and stirs rapidly.The temperature of mixture
Degree maintains 143 DEG C, and quantum dot grows at this temperature.Then, the toluene solution of 30ml is injected in there-necked flask
Carrying out cancellation reaction, there-necked flask is invaded not in tepidarium simultaneously.The quantum dot made is through methanol extraction twice, acetone purification
Once.More than reaction all completes in glove box.
3rd step, prepare the mixed solution of PbSe quantum dot and UV glue.4.6nm and the 6.1nm PbSe quantum that will prepare
Point is dissolved in chloroformic solution respectively, and PbSe and chloroform mixed solution after dissolving respectively mix with UV glue, pass through whirlpool
After rotation mixing and supersound process so that it is become homogeneous mixture.Remove the chloroform in mixture in a vacuum chamber.
4th step, the mixed solution the 3rd step obtained, according to PbSe quantum dot in mixed solution by large scale to little chi
Very little principle deposits successively.Use GaN chip as excitation source.First 6.1nm PbSe quantum dot is mixed with UV glue
Solution deposition is at GaN chip surface as ground floor, and the thickness after polishing is 48.0 μm.Then by 4.6nm PbSe quantum dot with
UV glue mixed solution is deposited on as on 6.1nm PbSe quantum dot layer, and the thickness after polishing is 671.5 μm.Thus complete two
Plant the preparation of the near-infrared LED launching wavelength.
2, to C2H2、NH3Mixed gas at room temperature carries out gas detecting
In conjunction with Fig. 6, the present invention is to C2H2、NH3Mixed gas at room temperature detects, and concrete detection method is as follows:
The first step, preparation detection C2H2、NH3Two kinds of near-infrared LEDs 1 launching wavelength；
Second step, by C2H2、NH3It is filled in air chamber 3；
3rd step, detection light source (near-infrared multi-wavelength LED 1) emit beam, through collimator and extender convex lens after switching on power
After mirror 2, received by infrared spectrometer 5 through convex lens 4 by the collimated light beam of air chamber 3；
4th step, respectively in laboratory 0～the C of 800ppm2H2、NH3Sample carries out gas detecting, in conjunction with Fig. 7 and Fig. 8,
The concentration signal of output is carried out numerical fitting.Digital filting is used to calculate C respectively2H2Concentration formula 2 and NH3Concentration
Formula 3:
Y=1763 × e-x/318+7667 formula 2
Y=6474 × e-x/370+17450 formula 3
5th step, by the luminescent spectrum of the PbSe quantum dot of display in infrared spectrometer, in conjunction with the 4th step gained formula
2, formula 3 calculates C respectively2H2、NH3Concentration.
3, interpretation
In order to test the feasibility of the present invention, the C that will detect according to above-mentioned gas detection method2H2And NH3Gas concentration
It is analyzed with actual value.Have chosen the sample of 5 groups of known matched proportion densities respectively, its measured data have typical generation
Table.Sample concentration is as shown in the table:
| C1 | C2 | C3 | C4 | C5 | |
| C2H2(ppm) | 100 | 250 | 400 | 550 | 700 |
| NH3(ppm) | 100 | 250 | 400 | 550 | 700 |
Refering to Fig. 9, Figure 10 and Figure 11, the concentration of test result is consistent with known matched proportion density, it was demonstrated that the present invention's can
Row.Meanwhile, the specific embodiment of the invention, for C2H2And NH3Monitoring lower-cut is 20ppm (0.002%), can meet work
Testing requirement in industry production and daily life.
Claims (1)
1. gas detection method based on PbSe quantum dot multi-wavelength near-infrared LED, it is characterised in that many based on PbSe quantum dot
The gas detection method of wavelength near-infrared LED is:
The first step, prepare near-infrared multi-wavelength LED (1)；
Second step, gas to be detected is filled in air chamber (3)；
3rd step, detection light source i.e. near-infrared multi-wavelength LED (1) emit beam after switching on power, after convex lens (2), logical
The collimated light beam crossing air chamber (3) is received by infrared spectrometer (5) through convex lens (4)；
4th step, tested gas is demarcated: respectively the gaseous sample of concentration known in laboratory is put into detecting system
In test, first one sample gas is put in air chamber (3), chooses many group concentration and detect, by detection output
Concentration signal carry out numerical fitting, draw the concentration formula of this kind of sample gas；Again another kind sample gas is entered to air chamber
(3), in, choose many group concentration and detect, the concentration signal of detection output is carried out numerical fitting, draws the second sample gas
The concentration formula of body；Realize the demarcation to gas with various successively；
5th step, utilize above-mentioned calibrated system, tested gas concentration is detected, it is achieved the measurement of gas concentration.
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| CN201610860545.9A CN106323900A (en) | 2014-07-19 | 2014-07-19 | Gas detection method based on PbSe-quantum-dot multi-wavelength near-infrared LED (Light Emitting Diode) |
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| CN201410345455.7A CN104091864B (en) | 2014-07-19 | 2014-07-19 | Multi-wavelength near-infrared LED manufacturing method based on PbSe quantum dots |
| CN201610860545.9A CN106323900A (en) | 2014-07-19 | 2014-07-19 | Gas detection method based on PbSe-quantum-dot multi-wavelength near-infrared LED (Light Emitting Diode) |
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| US9759652B2 (en) * | 2015-02-28 | 2017-09-12 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | Quantum dot light emitting diodes for multiplex gas sensing |
| CN110137334A (en) * | 2019-05-28 | 2019-08-16 | 深圳扑浪创新科技有限公司 | A kind of infrared LED device of quantum dot fluorescence conversion |
| CN110323318A (en) * | 2019-06-19 | 2019-10-11 | 岭南师范学院 | A kind of preparation method of the near-infrared luminous diode of PbSe quantum dot |
| CN112525854A (en) * | 2019-09-18 | 2021-03-19 | 大连兆晶生物科技有限公司 | Method for identifying components |
| CN112525853A (en) * | 2019-09-18 | 2021-03-19 | 大连兆晶生物科技有限公司 | Simple component identification method |
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| WO2012114624A1 (en) * | 2011-02-21 | 2012-08-30 | パナソニック株式会社 | Quantum dot semiconductor film and method of forming the same |
| CN102569570A (en) * | 2012-01-04 | 2012-07-11 | 天津理工大学 | Near-infrared inorganic quantum dot electroluminescent device and manufacturing method thereof |
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| CN102359948A (en) * | 2011-06-29 | 2012-02-22 | 中国科学院安徽光学精密机械研究所 | System and method for measuring greenhouse gas |
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| CN104091864B (en) | 2017-01-25 |
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