CN106300093A - A kind of method for designing of 10kV switch - Google Patents

Abstract

The present invention provides the method for designing that a kind of 10kV switchs, by calculating the quantity of thyristor cell, choose and connect static voltage sharing, dynamic voltage balancing electric capacity and the dynamic voltage balancing resistance formed needed for described thyristor cell, the first isolation switch being sequentially connected with again, described thyristor valve, current transformer and the second isolation switch, and the first isolation switch is connected with bus, the second isolation switch is connected with earthing power supply.The method that the present invention proposes is simple, effective and reliable；In equipment source, high-voltage switch gear re-optimization is designed, the on/off switch speed of the solid-state switch of the 10kV full electronic of its design is fast, without arc, unglazed and action silent, while substituting traditional mechanical chopper, avoid the defects such as speed of action is slow, mechanical life is short, noise is big, can achieve comprehensively put into operation at the more rapid scene flexibly of transformer station, it is ensured that transformer station properly functioning also improves the operational efficiency of transformer station.

Description

A kind of method for designing of 10kV switch

Technical field

The present invention relates to switch cubicle design field, be specifically related to the method for designing of a kind of 10kV switch.

Background technology

The Main Function of switch cubicle is to carry out generating electricity in power system, transmit electricity, during distribution and electric energy conversion, carry out Folding, control and protect electrical equipment.Parts in switch cubicle mainly have chopper, disconnecting switch, on-load switch, behaviour Make the compositions such as mechanism, transformer and various protection devices.It is primarily adapted for use in power plant, transformer station, petrochemical industry, Various different occasions such as metallurgical steel rolling, industry light industry textile industry, industrial enterprise and residential quarters, skyscraper etc..With thyristor device The electronic type solid-state switch making switch element can replace conventional mechanical switch.Owing to the switch of the type not having mechanical movement Parts, are referred to as solid-state switch.According to the development course of solid-state switch, can be divided into mixed switch and terminal full solid-state switch its Middle mixed switch is to be made up of as noncontacting switch is in parallel with mechanical switch power electronic devices.

The switch pattern using above-mentioned conventional equipment simply to pile up in domestic existing transformer station more, although during its work Almost without loss, but it nevertheless suffers from the restriction of mechanical switch movement time to the switch off time of fault current, and There is the shortcomings such as speed of action is slow, mechanical life is short, noise is big, it is impossible to realize the on-the-spot of fast and flexible in transformer station and throw Fortune.

Summary of the invention

In view of this, the method for designing of a kind of 10kV switch that the present invention provides, the method is simple, effective and reliable； In equipment source, high-voltage switch gear re-optimization is designed, the on/off switch speed of the solid-state switch of the 10kV full electronic of its design Degree is fast, without arc, unglazed and action silent, while substituting traditional mechanical chopper, it is to avoid speed of action slowly, The defects such as mechanical life is short, noise is big, it is possible to achieve comprehensively and put into operation at the more rapid scene flexibly of transformer station, it is ensured that Transformer station properly functioning also improves the operational efficiency of transformer station.

It is an object of the invention to be achieved through the following technical solutions:

The method for designing of a kind of 10kV switch, described method comprises the steps:

Step 1. calculates the quantity constituting the thyristor cell needed for thyristor valve；

Step 2. is chosen respectively and is constituted static voltage sharing needed for described thyristor cell, dynamic voltage balancing electric capacity and dynamically Equalizing resistance；

Step 3. by described static voltage sharing, dynamic voltage balancing electric capacity and dynamic voltage balancing resistance all with IGCT modules in parallel, And then form described thyristor cell；Described IGCT assembly includes 2 parallel connections and IGCT in opposite direction；

Step 4. is connected described thyristor cell, and then forms described thyristor valve；

The first isolation switch that step 5. is sequentially connected with, described thyristor valve, current transformer and the second isolation switch； Described first isolation switch is connected with bus；Described second isolation switch is connected with earthing power supply.

Preferably, described step 1, including:

According to thyristor valve maximum voltage in running and the voltage limits of monolayer IGCT, obtain described IGCT The expression formula of valve terminal voltage when valve is not turned on is as follows:

$\frac{V_{\max }}{n}\×f_v\×f_s\≤V_{\mathrm{BOD}}---\left(1\right)$

And then be calculated the span of quantity n of thyristor cell, and choose the value of n in this span；Its In, V_maxMaximal valve terminal voltage for thyristor valve；f_vFor the voltage's distribiuting factor；f_sFor design safety factor；V_BOD Voltage limits for monolayer IGCT forward breakdown.

Preferably, described step 2, including:

2-1., according to the static characteristic of IGCT, chooses described static voltage sharing；

2-2. according to the maximum difference of the QRR of described IGCT and maximal valve terminal voltage, choose described the most all Voltage capacitance；

2-3., according to loop inductance and described dynamic voltage balancing electric capacity, chooses described dynamic voltage balancing resistance.

Preferably, described step 2-1, including:

According to the static characteristic of described IGCT, the electric current flowing through described static voltage sharing need to be made more than described IGCT Leakage current；Therefore, the described static voltage sharing R that need to choose_PResistance be:

$R_P\≤(\frac{1}{K_u}-1)\frac{U_{\mathrm{RRM}}}{I_{\mathrm{RRM}}}---\left(2\right)$

The described static voltage sharing R that need to choose_PMaximum power value P_PFor:

$P_P=\frac{K_p{\left(\frac{V_{\max }}{n}\right)}^2}{R_P}---\left(3\right)$

K_uFor all pressing coefficient；U_RRMSpecified repetitive peak voltage for described IGCT；I_RRMFor with U_RRMCorresponding Leakage current；K_pFor design factor.

Preferably, described step 2-2, including:

The maximum difference of the QRR according to described IGCT and maximal valve terminal voltage, obtain choosing is described dynamic The span of state equalizing capacitance C is:

$C\≥\frac{\mathrm{\Δ}{Q}_{\max }(n-1)}{V_{\max }(\frac{1}{K_u}-1)}---\left(4\right)$

ΔQ_maxMaximum difference for described IGCT QRR；Ku is for all pressing coefficient.

Preferably, described step 2-3, including:

According to the capacitance of loop inductance L Yu described dynamic voltage balancing electric capacity C, obtain the described dynamic voltage balancing electricity that need to choose Resistance R_sSpan is:

$0\≤R_s\≤2\sqrt{\frac{L}{C}}---\left(5\right).$

Preferably, after described step 4, including:

Described thyristor valve connects spark gap.

Preferably, after described step 5, including:

A., ground connection display is installed between described second isolation switch and described earthing power supply；

Described first isolation switch and described second isolation switch are installed in isolation outgoing line cabinet；

B. described thyristor valve is vertically installed in the valve cabinet of the vertically rectangle of placement；

C. axial flow blower installed by the upper end cover plate at described valve cabinet；Lower end cover plate at described valve cabinet is installed into air port.

Preferably, described step b, including:

B-1. on the base plate inside described valve cabinet, channel-section steel is set, and the bottom of thyristor valve is arranged in described channel-section steel；

B-2. it is connected fixing to the sidewall of described thyristor valve and the sidewall insulator inside described valve cabinet.

From above-mentioned technical scheme it can be seen that the invention provides the method for designing of a kind of 10kV switch, by meter Calculate the quantity of thyristor cell, choose and connect the static voltage sharing needed for the described thyristor cell of composition, dynamic voltage balancing Electric capacity and dynamic voltage balancing resistance, then be sequentially connected with the first isolation switch, described thyristor valve, current transformer and second Isolation switch, and the first isolation switch is connected with bus, the second isolation switch is connected with earthing power supply.The present invention proposes Method simple, effectively and reliable；Designing high-voltage switch gear re-optimization in equipment source, the 10kV of its design is the most electric The on/off switch speed of the solid-state switch of minor is fast, without arc, unglazed and action silent, at replacement traditional mechanical chopper Simultaneously, it is to avoid the defects such as speed of action is slow, mechanical life is short, noise is big, it is possible to achieve in transformer station more comprehensively Put into operation in the scene of fast and flexible, it is ensured that transformer station properly functioning also improves the operational efficiency of transformer station.

With immediate prior art ratio, the technical scheme that the present invention provides has a following excellent effect:

1, in technical scheme provided by the present invention, by calculating the quantity of thyristor cell, choose and connect composition institute State the static voltage sharing needed for thyristor cell, dynamic voltage balancing electric capacity and dynamic voltage balancing resistance, then first be sequentially connected with Isolation switch, described thyristor valve, current transformer and the second isolation switch, and the first isolation switch is connected with bus, Second isolation switch is connected with earthing power supply；In equipment source, high-voltage switch gear re-optimization is designed, its method for designing is simple, Effective and reliable, it is ensured that the solid-state switch of 10kV full electronic putting into operation in transformer station, improve the fortune of transformer station Line efficiency.

2, technical scheme provided by the present invention, by finely choosing and connect form needed for described thyristor cell quiet State equalizing resistance, dynamic voltage balancing electric capacity and dynamic voltage balancing resistance；Accurately and efficiently design and meet producer or transformer station and want The solid-state switch of the 10kV full electronic asked, its on/off switch speed is fast, without arc, unglazed and action silent, in replacement While traditional mechanical chopper, it is to avoid the defects such as speed of action is slow, mechanical life is short, noise is big, it is possible to Quan Mianshi Show and put into operation at the more rapid scene flexibly of transformer station, it is ensured that transformer station properly functioning has also improve the fortune of transformer station Line efficiency.

3, technical scheme provided by the present invention, by being placed in the connection of each parts in valve cabinet and outgoing line cabinet, it is ensured that The solid-state switch of 10kV full electronic safety in transformer station and use efficiently.

4, technical scheme provided by the present invention, by the calculating to dynamic voltage balancing resistance, it is ensured that dynamic voltage balancing resistance Can accurately suppress the vibration that loop inductance and electric capacity cause, the electric discharge electricity of electric capacity when suppression IGBT group is opened simultaneously Stream.

5, technical scheme provided by the present invention, by the use of spark gap, owing to dynamic voltage balancing resistance, electric capacity are to mistake The absorbability of voltage is limited, in order to protect IGCT further, generally uses metal oxide arrester and thyristor valve Mode in parallel reduces the harm that overvoltage produces.

6, technical scheme provided by the present invention, installs axial flow blower by the upper end cover plate at described valve cabinet；Described The lower end cover plate of valve cabinet is installed into air port, accelerates the circulation cooling of air, it is ensured that the solid-state of 10kV full electronic is opened The good operation closed.

7, the technical scheme that the present invention provides, is widely used, has significant Social benefit and economic benefit.

Accompanying drawing explanation

Fig. 1 is the flow chart of the method for designing of a kind of 10kV switch of the present invention；

Fig. 2 be the present invention method for designing in 10kV switch connection diagram；

Fig. 3 be the present invention method for designing in the connection diagram of thyristor valve；

Fig. 4 be the present invention method for designing in the flow chart of step 2；

Fig. 5 be the present invention method for designing in flow chart after step 5；

Fig. 6 is the structural representation of the 10kV switch in the method for designing of the present invention；

Fig. 7 is the schematic flow sheet of the application examples of the present invention.

Wherein, QS1 the first isolation switch, TS thyristor valve, TA current transformer, QS2 the second isolation knife Lock, thyristor cell T；Described thyristor cell T includes the IGCT assembly of parallel connection, R_pStatic voltage sharing, R_sDynamic voltage balancing resistance, C dynamic voltage balancing resistance, H spark gap, 1 axial flow blower, 2 valve cabinets, 3 insulation Son, 4 isolation outgoing line cabinet, 5 channel-section steels, 6 air inlets.

Detailed description of the invention

Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete Ground describes, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments.Base In embodiments of the invention, those of ordinary skill in the art obtained under not making creative work premise all its His embodiment, broadly falls into the scope of protection of the invention.

As shown in Figures 1 to 3, the present invention provides the method for designing that a kind of 10kV switchs, and comprises the steps:

Step 1. calculates the quantity constituting the thyristor cell T needed for thyristor valve TS, including:

According to thyristor valve TS maximum voltage in running and the voltage limits of monolayer IGCT, obtain IGCT The expression formula of valve terminal voltage when valve TS is not turned on is as follows:

$\frac{V_{\max }}{n}\×f_v\×f_s\≤V_{\mathrm{BOD}}---\left(1\right)$

And then be calculated the span of quantity n of thyristor cell, and choose the value of n in this span；Its In, V_maxMaximal valve terminal voltage for thyristor valve；f_vFor the voltage's distribiuting factor；f_sFor design safety factor；V_BOD Voltage limits for monolayer IGCT forward breakdown.

Step 2. chooses the static voltage sharing R constituted needed for thyristor cell respectively_P, dynamic voltage balancing electric capacity C and dynamically Equalizing resistance R_s；

Step 3. is by static voltage sharing R_P, dynamic voltage balancing electric capacity C and dynamic voltage balancing resistance R_sAll with IGCT assembly Parallel connection, and then composition thyristor cell T；IGCT assembly includes 2 parallel connections and IGCT in opposite direction；

Step 4. series thyristor unit T, and then composition thyristor valve TS；

Thyristor valve TS connects spark gap H；

The first isolation switch QS1, thyristor valve TS, current transformer TA and the second isolation that step 5. is sequentially connected with Disconnecting link QS2；First isolation switch QS1 is connected with bus；Second isolation switch QS2 is connected with earthing power supply.

As shown in Figure 4, step 2 includes:

2-1., according to the static characteristic of IGCT, chooses static voltage sharing R_P；That is:

According to the static characteristic of IGCT, need to make to flow through static voltage sharing R_PElectric current more than the leakage current of IGCT； Therefore, the static voltage sharing R that need to choose_PResistance be:

$R_P\≤(\frac{1}{K_u}-1)\frac{U_{\mathrm{RRM}}}{I_{\mathrm{RRM}}}---\left(2\right)$

The static voltage sharing R that need to choose_PMaximum power value P_pFor:

$P_P=\frac{K_p{\left(\frac{V_{\max }}{n}\right)}^2}{R_P}---\left(3\right)$

K_uFor all pressing coefficient；U_RRMSpecified repetitive peak voltage for IGCT；I_RRMFor with U_RRMCorresponding electric leakage Stream；K_pFor design factor.

2-2., according to the maximum difference of the QRR of IGCT and maximal valve terminal voltage, chooses dynamic voltage balancing electric capacity C；That is:

The maximum difference of the QRR according to IGCT and maximal valve terminal voltage, obtain the dynamic voltage balancing electricity that need to choose The span of the capacitance holding C is:

$C\≥\frac{\mathrm{\Δ}{Q}_{\max }(n-1)}{V_{\max }(\frac{1}{K_u}-1)}---\left(4\right)$

ΔQ_maxMaximum difference for IGCT QRR；Ku is for all pressing coefficient.

2-3., according to loop inductance and dynamic voltage balancing electric capacity C, chooses dynamic voltage balancing resistance R_s；That is:

According to the capacitance of loop inductance L Yu dynamic voltage balancing electric capacity C, obtain the dynamic voltage balancing resistance R that need to choose_sResistance Value span is:

$0\≤R_s\≤2\sqrt{\frac{L}{C}}---\left(5\right).$

As it can be seen in figures 5 and 6, after step 5, including:

A., ground connection display is installed between the second isolation switch QS2 and earthing power supply；

First isolation switch QS1 and the second isolation switch QS2 is installed in isolation outgoing line cabinet 4；

B. thyristor valve TS is vertically installed in the valve cabinet 2 of the vertically rectangle of placement；That is:

B-1., channel-section steel 5 is set on the base plate inside valve cabinet 2, and the bottom of thyristor valve TS is arranged in channel-section steel 5；

B-2. it is connected fixing with the sidewall insulator 3 inside valve cabinet 2 for the sidewall of thyristor valve TS；

C. axial flow blower 1 installed by the upper end cover plate at valve cabinet 2；Lower end cover plate at valve cabinet 2 is installed into air port 6.

As it is shown in fig. 7, with 110kV mobile substation mainly by 1 110kV/10kV main transformer, some 10kV outlets Composition, and the plan boundary condition that provides of user or electric power system be nominal load be 5MVA, rated voltage be 10.5 As a example by kV, rated current virtual value are 275A and peak value of short is 22kA, it is provided that setting of a kind of 10kV switch The application examples of meter method, method comprises the steps:

The first step: calculate the quantity constituting the thyristor cell needed for thyristor valve, including:

According to thyristor valve maximum voltage in running and the voltage limits of monolayer IGCT, obtain thyristor valve not The expression formula of valve terminal voltage during conducting is as follows:

$\frac{V_{\max }}{n}\×f_v\×f_s\≤V_{\mathrm{BOD}}---\left(1\right)$

And then be calculated the span of quantity n of thyristor cell, and choose the value of n in this span；Its In, V_maxMaximal valve terminal voltage for thyristor valve；f_vFor the voltage's distribiuting factor, typically take 1.15；f_sFor design peace Total divisor, typically takes 1.6；V_BODFor the voltage limits of monolayer IGCT forward breakdown, V_BOD=6500V；

Work as V_maxDuring=1.1 × 10.5 × 1.414=16.3kV, n >=4.6；Take n=5.

Second step: choose static voltage sharing, dynamic voltage balancing electric capacity and the dynamic voltage balancing constituted needed for thyristor cell respectively Resistance；The effect of IGCT assembly is on and cut-off current, and it is made up of 10 IGCTs the most antiparallel.Light Control thyristor structure parameter is provided by producer.The minimum 45KN of pressure assembling force of photo thyristor, is 60KN to the maximum, here Take its representative value 50KN.Including:

(1). according to the static characteristic of IGCT, choose static voltage sharing；That is:

According to the static characteristic of IGCT, in order to obtain preferably all pressing effect, need to make to flow through the electricity of static voltage sharing Stream is more than the leakage current of IGCT；Therefore, the static voltage sharing R that need to choose_PResistance be:

$R_P\≤(\frac{1}{K_u}-1)\frac{U_{\mathrm{RRM}}}{I_{\mathrm{RRM}}}=(\frac{1}{0.8}-1)\frac{7500}{200\×{10}^{-3}}=9.375\mathrm{k\Ω}---\left(2\right)$

In the case of considering to transship at 1.1 times, the static voltage sharing R that need to choose_PMaximum power value P_pFor:

$P_P=\frac{K_p{\left(\frac{V_{\max }}{n}\right)}^2}{R_P}=\frac{0.45\×{\left(\frac{1.1\×1.414\×10.5k}{5}\right)}^2}{9.375k}=512W---\left(3\right)$

K_uFor all pressing coefficient, generally take 0.8；U_RRMFor the specified repetitive peak voltage of IGCT, U_RRM=7500V；I_RRM For with U_RRMCorresponding leakage current, the I typically provided by IGCT manufacturer_RRM=200mA；K_pFor design factor.

(2). according to maximum difference and the maximal valve terminal voltage of the QRR of IGCT, choose dynamic voltage balancing electricity Hold；That is:

The maximum difference of the QRR according to IGCT and maximal valve terminal voltage, obtain the dynamic voltage balancing electricity that need to choose The span of the capacitance holding C is:

$C\≥\frac{\mathrm{\Δ}{Q}_{\max }(n-1)}{V_{\max }(\frac{1}{K_u}-1)}=\frac{1000\×{10}^{-6}\×(5-1)}{1.1\×1.414\×10.5\×{10}^3\×(\frac{1}{0.8}-1)}=0.98\mathrm{uF}---\left(4\right)$

ΔQ_maxFor the maximum difference of IGCT QRR, typically provided by IGCT manufacturer Δ Qmax=1000uC；Ku is for all pressing coefficient；

Owing to Tandem devices exists the difference of service time and QRR, cause it during opening and turning off The voltage distribution that there will be transient state is unbalanced.The effect of dynamic voltage balancing electric capacity mainly absorbs transient overvoltage, by imbalance Control of Voltage is in allowed limits.

(3). according to loop inductance and dynamic voltage balancing electric capacity, choose dynamic voltage balancing resistance；Dynamic voltage balancing resistance mainly has Two effects: for the vibration suppressing loop inductance L to cause with electric capacity C, electric capacity when suppression IGBT group is opened simultaneously The discharge current of C.

Electric capacity C series resistance R can play positive damping effect, it be possible to prevent R, L, C circuit in transient process, because shaking Swing the overvoltage occurred at capacitor two ends and damage IGCT.In order to provide positive damping to LCR loop, it is ensured that loop is in Under damped oscillation state.That is:

According to the capacitance C of loop inductance L Yu dynamic voltage balancing electric capacity, obtain the dynamic voltage balancing resistance R that need to choose_sResistance The span of value is:

$0\≤R_s\≤2\sqrt{\frac{L}{C}}---\left(5\right)$

Being learnt by calculated above, 10kV busbar short-circuit dash current peak value is 22kA, tries to achieve system equivalent impedance:

$Z=\frac{10.5\mathrm{kV}}{1.732\×22\mathrm{kA}}\≈0.27\mathrm{\Ω}---\left(6\right)$

Disregarding resistance, system equivalent inductance L is:

$L=\frac{0.995Z}{100\mathrm{\π}}=0.85\mathrm{mH}---\left(7\right)$

$R_s\≤2\sqrt{\frac{L}{C}}=2\sqrt{\frac{0.85\mathrm{mH}}{1\mathrm{uF}}}=58.3\mathrm{\Ω}---\left(8\right)$

The discharge current of electric capacity C when dynamic voltage balancing resistance can suppress IGBT group to open.Open from suppression concussion and suppression The angle analysis of logical discharge current, the resistance of on-state equalizing resistance is the bigger the better in above-mentioned computer capacity, but excessive R_sHigher voltage can be produced when electric capacity C charges, make IGCT overvoltage.Consider valve size and common specification, R_sChoose 50 Ω.

In the case of circuit connects load, voltage has been born at thyristor valve two ends.(circuit when IGCT triggers first During combined floodgate), line voltage distribution phase angle may arbitrary value in 0～180 °.When line voltage distribution phase angle is 90 °, Valve terminal voltage reaches maximum, and as sent triggering signal at this moment, thyristor valve then can bear step electricity in the moment of conducting Pressure, by sinusoidal voltage peak value to 0V.In this case, dynamic voltage balancing electric capacity is by IGCT and dynamic voltage balancing resistance Discharging in loop, the current maxima flowing through resistance is:

$I_R=I_C=\frac{\frac{V_{\max }}{n}}{\mathrm{Xc}}=\frac{\frac{V_{\max }}{n}}{\frac{1}{2\mathrm{\πfC}}}=\frac{\frac{1.1\×1.414\×10.5}{5}\mathrm{kV}}{\frac{1}{2\mathrm{\π}\×50\×1\mathrm{\μf}}}=1.02A---\left(9\right)$

Resistance power consumption is:

P_R=I_R ²R=1.02²× 50=52W (10)

3rd step: by static voltage sharing, dynamic voltage balancing electric capacity and dynamic voltage balancing resistance all with IGCT modules in parallel, And then composition thyristor cell；IGCT assembly includes 2 parallel connections and IGCT in opposite direction；IGCT is light-operated crystalline substance Brake tube；

4th step: series thyristor unit, and then composition thyristor valve；

5th step: connect spark gap on thyristor valve；

Owing to dynamic voltage balancing resistance, electric capacity are limited to the absorbability of overvoltage, in order to protect IGCT further, logical The harm that overvoltage produces is reduced frequently with the mode that metal oxide arrester H is in parallel with thyristor valve.Metal-oxide Spark gap H has good nonlinear wind vibration, and after voltage reaches its flex point, electric current increases rapidly, makes voltage Raise further and tend to slow, thus reach the purpose of over-voltage.The characterisitic parameter of spark gap H chooses reference standard DL T 605 1996 " HVDC converter substation Insulation Coordination directive/guide ", GB 11,032 2010 " AC gapless burning Thing spark gap H " and " International Electrotechnical Commission (IEC99 4) " requirement to gapless metal-oxide lighting arrester H；

Should the rated voltage virtual value in the technical parameter of spark gap H in use-case be 13.7kV, continuous running voltage Virtual value is 11kV, direct current 1mA reference voltage >=17kV, residual voltage peak value≤31kV and 2ms square wave discharge capacity is 400A。

6th step: the first isolation switch QS1, thyristor valve, current transformer and the second isolation switch being sequentially connected with QS2；First isolation switch QS1 is connected with bus；Second isolation switch QS2 is connected with earthing power supply；

7th step: install ground connection display between the second isolation switch QS2 and earthing power supply；

8th step: the first isolation switch QS1 and the second isolation switch QS2 is installed in isolation outgoing line cabinet；

9th step: thyristor valve is vertically installed in the valve cabinet of the vertically rectangle of placement；The rated voltage that valve cabinet is overall For 12kV, rated frequency is 50Hz and rated current is 1250A；That is:

(1). channel-section steel is set on the base plate inside valve cabinet, and the bottom of thyristor valve is arranged in channel-section steel；

(2). it is connected fixing to the sidewall of thyristor valve and the sidewall insulator inside valve cabinet；

Tenth step: axial flow blower installed by the upper end cover plate at valve cabinet；Lower end cover plate at valve cabinet is installed into air port, is beneficial to The circulation cooling of air, A phase B phase C phase is electrically coupled with other switch cubicle by left side and right side busbar.

Should also include by the thyristor valve in use-case: valve yoke assembly, insulated tension pole assembly, top laminated structure assembly, heat radiation Device assembly, conductive bus bar assembly, valve prop up support component, static state voltage equipoise assembly and dynamic voltage balancing assembly；

Wherein, the effect of valve yoke assembly is to support thyristor groups and heat-pipe radiator group and other electric component.Valve yoke By top laminated structure group, each IGCT and heat-pipe radiator are applied the pressure assembling force of regulation；It is by upper and lower end plate and support Blocks etc. form, and the power that it bears is 60KN.

The effect of insulated tension pole assembly is subject to push up the pressure assembling force that in laminated structure assembly, butterfly spring is applied by upper and lower end plate, Being the critical component of valve, it is made up of insulation blanket stud and 64 M30 insulating nuts of 8 M30, and every 4 thoroughly do away with edge The power that screw rod bears is 60KN.

The effect of top laminated structure group is by butterfly spring, produces enough pressure assembling forces, and makes IGCT and radiator valve string Keep stable, be beneficial to conduction and heat conduction.It is made up of stage clip guide pillar, adjusting nut, stage clip guide pin bushing, disc spring group, According to IGCT pressure assembling force requirement, the pressure assembling force that disc spring group produces is 60KN.

The heat that the effect conduction IGCT of heat-pipe radiator assembly is opened and produced in turn off process, puts IGCT anti-exceeding High workload junction temperature.Effect additionally is conduction.The maximum steady state electric current of its conducting is 1250A.Radiator panel is by 12 Radiator composition.

The effect of conductive bus bar assembly is to be connected with head end support frame and end support framework at valve two ends, then passes through head end Support frame and end support framework and vehicle-mounted transformer station other regulator cubicle are electrically connected.It is by the soft busbar of upper and lower side And each IGCT level connection soft busbar composition.

It is to support solid-state switch valve that valve props up the effect of support component, and secures the valve within valve car, and by solid-state switch valve A Phase B phase C phase carries out insulation fixed installation.It is made up of 4 10KV support insulators.

The effect of static state voltage equipoise assembly is when thyristor valve stable state, makes positive anti-parallel thyristor all press.It is by 5 glass Glass glaze membrane resistance and conducting bracket composition thereof.

The effect of dynamic voltage balancing assembly is when thyristor valve transient state is opened and turned off, and makes positive anti-parallel thyristor all press.It It is made up of 5 glass glaze membrane resistances and 10 its conducting brackets of membrane capacitance.

Above example is only in order to illustrate that technical scheme is not intended to limit, although with reference to above-described embodiment to this Invention has been described in detail, and the detailed description of the invention of the present invention still can be entered by those of ordinary skill in the field Row amendment or equivalent, and these are without departing from any amendment of spirit and scope of the invention or equivalent, it is equal Within the claims of the present invention that application is awaited the reply.

Claims (9)

1. the method for designing of a 10kV switch, it is characterised in that described method comprises the steps:

Step 1. calculates the quantity constituting the thyristor cell needed for thyristor valve；

Step 2. is chosen respectively and is constituted static voltage sharing needed for described thyristor cell, dynamic voltage balancing electric capacity and dynamically Equalizing resistance；

Step 3. by described static voltage sharing, dynamic voltage balancing electric capacity and dynamic voltage balancing resistance all with IGCT modules in parallel, And then form described thyristor cell；Described IGCT assembly includes 2 parallel connections and IGCT in opposite direction；

Step 4. is connected described thyristor cell, and then forms described thyristor valve；

The first isolation switch that step 5. is sequentially connected with, described thyristor valve, current transformer and the second isolation switch； Described first isolation switch is connected with bus；Described second isolation switch is connected with earthing power supply.

2. the method for claim 1, it is characterised in that described step 1, including:

According to thyristor valve maximum voltage in running and the voltage limits of monolayer IGCT, obtain described IGCT The expression formula of valve terminal voltage when valve is not turned on is as follows:

$\frac{V_{\max }}{n}\×f_v\×f_s\≤V_{\mathrm{BOD}}---\left(1\right)$

And then be calculated the span of quantity n of thyristor cell, and choose the value of n in this span；Its In, V_maxMaximal valve terminal voltage for thyristor valve；f_vFor the voltage's distribiuting factor；f_sFor design safety factor；V_BOD Voltage limits for monolayer IGCT forward breakdown.

3. method as claimed in claim 2, it is characterised in that described step 2, including:

2-1., according to the static characteristic of IGCT, chooses described static voltage sharing；

2-2. according to the maximum difference of the QRR of described IGCT and maximal valve terminal voltage, choose described the most all Voltage capacitance；

2-3., according to loop inductance and described dynamic voltage balancing electric capacity, chooses described dynamic voltage balancing resistance.

4. method as claimed in claim 3, it is characterised in that described step 2-1, including:

According to the static characteristic of described IGCT, the electric current flowing through described static voltage sharing need to be made more than described IGCT Leakage current；Therefore, the described static voltage sharing R that need to choose_PResistance be:

$R_P\≤(\frac{1}{K_u}-1)\frac{U_{\mathrm{RRM}}}{I_{\mathrm{RRM}}}---\left(2\right)$

The described static voltage sharing R that need to choose_PMaximum power value P_PFor:

$P_P=\frac{K_p{\left(\frac{V_{\max }}{n}\right)}^2}{R_P}---\left(3\right)$

K_uFor all pressing coefficient；U_RRMSpecified repetitive peak voltage for described IGCT；I_RRMFor with U_RRMCorresponding Leakage current；K_pFor design factor.

5. method as claimed in claim 3, it is characterised in that described step 2-2, including:

The maximum difference of the QRR according to described IGCT and maximal valve terminal voltage, obtain choosing is described dynamic The span of state equalizing capacitance C is:

$C\≥\frac{\mathrm{\Δ}{Q}_{\max }(n-1)}{V_{\max }(\frac{1}{K_u}-1)}---\left(4\right)$

ΔQ_maxMaximum difference for described IGCT QRR；Ku is for all pressing coefficient.

6. the method as described in any one of claim 3 to 5, it is characterised in that described step 2-3, including:

According to the capacitance of loop inductance L Yu described dynamic voltage balancing electric capacity C, obtain the described dynamic voltage balancing electricity that need to choose Resistance R_sSpan is:

$0\≤R_s\≤2\sqrt{\frac{L}{C}}---\left(5\right).$

7. the method for claim 1, it is characterised in that after described step 4, including:

Described thyristor valve connects spark gap.

8. the method for claim 1, it is characterised in that after described step 5, including:

A., ground connection display is installed between described second isolation switch and described earthing power supply；

Described first isolation switch and described second isolation switch are installed in isolation outgoing line cabinet；

B. described thyristor valve is vertically installed in the valve cabinet of the vertically rectangle of placement；

C. axial flow blower installed by the upper end cover plate at described valve cabinet；Lower end cover plate at described valve cabinet is installed into air port.

9. method as claimed in claim 8, it is characterised in that described step b, including:

B-1. on the base plate inside described valve cabinet, channel-section steel is set, and the bottom of thyristor valve is arranged in described channel-section steel；

B-2. it is connected fixing to the sidewall of described thyristor valve and the sidewall insulator inside described valve cabinet.