CN106299786A - A kind of adapter, direct insertion DRAM granule, test device for internal memory and method - Google Patents

A kind of adapter, direct insertion DRAM granule, test device for internal memory and method Download PDF

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Publication number
CN106299786A
CN106299786A CN201610634329.2A CN201610634329A CN106299786A CN 106299786 A CN106299786 A CN 106299786A CN 201610634329 A CN201610634329 A CN 201610634329A CN 106299786 A CN106299786 A CN 106299786A
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CN
China
Prior art keywords
dram
attachment structure
adapter
contact pin
granule
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610634329.2A
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Chinese (zh)
Inventor
李德恒
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Inspur Electronic Information Industry Co Ltd
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Inspur Electronic Information Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inspur Electronic Information Industry Co Ltd filed Critical Inspur Electronic Information Industry Co Ltd
Priority to CN201610634329.2A priority Critical patent/CN106299786A/en
Publication of CN106299786A publication Critical patent/CN106299786A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02Contact members
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R31/00Coupling parts supported only by co-operation with counterpart
    • H01R31/06Intermediate parts for linking two coupling parts, e.g. adapter
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R2201/00Connectors or connections adapted for particular applications
    • H01R2201/20Connectors or connections adapted for particular applications for testing or measuring purposes

Abstract

The invention provides a kind of adapter, direct insertion DRAM granule, test device for internal memory and method, described adapter includes: connector body and at least one connecting contact pin, wherein, each described connecting contact pin includes contact pin body, the dynamic random access memory DRAM attachment structure being positioned at described contact pin body one end, is positioned at the pad attachment structure of the described contact pin body other end;Described DRAM attachment structure and described pad attachment structure have conductive characteristic;The contact pin body of each described connector pin penetrates described connector body, and makes described DRAM attachment structure and described pad attachment structure lay respectively at the both sides of described connector body;Described DRAM attachment structure, for connecting the DRAM granule on external memory bar by the way of sandwich;Described pad attachment structure, for connecting external pads by the way of grafting.The scheme that the present invention provides can be tested for each DRAM granule on memory bar.

Description

A kind of adapter, direct insertion DRAM granule, test device for internal memory and method
Technical field
The present invention relates to electronic circuit technology field, particularly to a kind of adapter, direct insertion DRAM granule, MEMTEST Device and method.
Background technology
Internal memory is as server and the indispensable accessory of storage, and it directly determines internal memory with compatibility and the matching of mainboard The stability of link.If this link can not design well and verify, it will cause a series of memory compatibility problem, and Compatibility issue relates to the various aspects such as board design, making technology, environmental factors.Therefore, the test checking of internal memory becomes Particularly important.
Present stage, internal memory is tested be usually DIMM on mainboard (Dual Inline Memory Module, Dual inline memory module adapter) place carries out, and test is the situation of whole memory bar, it is impossible to every in real test to internal memory The working condition of individual DRAM (Dynamic Random Access Memory, dynamic random access memory) granule.
Summary of the invention
Embodiments provide a kind of adapter, direct insertion DRAM granule, test device for internal memory and method, it is possible to pin Each DRAM granule on memory bar is tested.
A kind of adapter, including: connector body, at least one connecting contact pin, wherein,
Each described connecting contact pin includes contact pin body, is positioned at the dynamic random access memory of described contact pin body one end Device DRAM attachment structure, it is positioned at the pad attachment structure of the described contact pin body other end;
Described DRAM attachment structure and described pad attachment structure have conductive characteristic;
The contact pin body of each described connector pin penetrates described connector body, and makes described DRAM connect knot Structure and described pad attachment structure lay respectively at the both sides of described connector body;
Described DRAM attachment structure, for connecting the DRAM granule on external memory bar by the way of sandwich;
Described pad attachment structure, for connecting external pads by the way of grafting.
Preferably,
Described DRAM attachment structure includes:
It is positioned at least two shell fragment inside described contact pin body;
Or,
It is positioned at least two arc extrusome inside described contact pin body.
Preferably,
Described pad attachment structure includes:
Cone insert structure;
Or,
Cylinder insert structure.
Preferably,
Described pad attachment structure, for being connected with the pad on the circuit board of external memory by the way of grafting.
Preferably,
Described adapter, farther includes: at least one the fixing screw being positioned on described connector body, is used for connecting On the circuit board of external memory.
Preferably,
A kind of direct insertion DRAM granule, including:
DRAM body and at least one the deriving structure body being positioned on described DRAM body;
At least one deriving structure body described can be connected on the adapter of outside by the way of held.
Preferably,
A kind of test device for internal memory, including:
Described adapter, memory bar, DRAM granule that at least one is described;
The described DRAM that each DRAM granule is clamped in described adapter by least one deriving structure body connects In structure;
The described pad attachment structure of described adapter is connected with pad connecting groove on described memory bar.
Preferably,
Described pad connecting groove, is positioned at the DRAM granule to be measured of described memory bar.
Preferably,
Test device for internal memory carries out the method for MEMTEST, including:
Testing tool is connected to the DRAM attachment structure of described adapter and the deriving structure body of described DRAM granule Junction;
Utilize described testing tool that each DRAM granule to be measured of memory bar is tested.
Preferably,
Described test includes: signal testing, or power supply test.
Embodiments provide a kind of adapter, direct insertion DRAM granule, test device for internal memory and method, adapter The DRAM attachment structure of connecting contact pin one end be connected with DRAM granule to be measured, the pad of the connecting contact pin other end of adapter is even Access node structure is connected with external pads.By arranging adapter, by script Surface Mount DRAM granule on memory bar from main memory circuit Separate on plate, in order to the DRAM granule on memory bar is tested.The scheme that the present invention provides can be for memory bar Each DRAM granule upper is tested.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is the present invention Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to according to These accompanying drawings obtain other accompanying drawing.
Fig. 1 is the structural representation of the adapter that one embodiment of the invention provides;
Fig. 2 is the structural representation of a kind of connecting contact pin that one embodiment of the invention provides;
Fig. 3 is the structural representation of a kind of adapter that another embodiment of the present invention provides;
Fig. 4 is the structural representation of a kind of direct insertion DRAM granule that one embodiment of the invention provides;
Fig. 5 is the structural representation of a kind of direct insertion DRAM granule that another embodiment of the present invention provides;
Fig. 6 is the structural representation of a kind of test device for internal memory that one embodiment of the invention provides;
Fig. 7 is the structural representation of a kind of memory bar that one embodiment of the invention provides;
Fig. 8 is the flow chart of a kind of internal storage testing method that one embodiment of the invention provides;
Fig. 9 is the structural representation of a kind of test device for internal memory that another embodiment of the present invention provides;
Figure 10 is the flow chart of a kind of internal storage testing method that another embodiment of the present invention provides;
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearer, below in conjunction with the embodiment of the present invention In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is The a part of embodiment of the present invention rather than whole embodiments, based on the embodiment in the present invention, those of ordinary skill in the art The every other embodiment obtained on the premise of not making creative work, broadly falls into the scope of protection of the invention.
As it is shown in figure 1, embodiments provide a kind of adapter, including:
Connector body 101 and at least one connecting contact pin 102;
Each described connecting contact pin 102, including:
Contact pin body 1021;
It is positioned at the DRAM attachment structure 1022 of described contact pin body 1021 one end;
It is positioned at the pad attachment structure 1023 of described contact pin body 1021 other end;
Described DRAM attachment structure 1022 and described pad attachment structure 1023 have conductive characteristic;
The contact pin body 1021 of each described connector pin 102 penetrates described connector body 101, and makes described DRAM attachment structure 1022 and described pad attachment structure 1023 lay respectively at the both sides of described connector body 101;
Described DRAM attachment structure 1022, for connecting DRAM on external memory bar by the way of sandwich Grain;
Described pad attachment structure 1023, for connecting external pads by the way of grafting.
Embodiments providing a kind of adapter, the DRAM attachment structure of connecting contact pin one end of adapter is with to be measured DRAM granule connects, and the pad attachment structure of the connecting contact pin other end of adapter is connected with external pads.By arranging connection Device, separates script Surface Mount DRAM granule on memory bar from memory circuit board, in order to the DRAM on memory bar Granule is tested.The scheme that the present invention provides can be tested for each DRAM granule on memory bar.
In the adapter shown in above-mentioned Fig. 1, connecting contact pin 102 can have various structures.
Such as, the DRAM attachment structure 1022 in connecting contact pin 102 includes: be positioned at inside described contact pin body 1021 extremely Few two shell fragments, or, it is positioned at least two arc extrusome inside described contact pin body 1021.
For another example, the pad attachment structure 1023 in connecting contact pin 102 includes: cone insert structure, or, cylinder inserts Structure.
In an embodiment of the invention, include being positioned at described contact pin body 1021 with described DRAM attachment structure 1022 Two shell fragments of side, and as a example by pad attachment structure 1023 includes cone insert structure, the concrete knot of connecting contact pin 102 is described Structure.As in figure 2 it is shown, include: contact pin body 2021, be positioned at contact pin body 2021 upper end and two shell fragments 2022 of inner side, be positioned at The cone insert structure 2023 of contact pin body 2021 lower end.
Fig. 2 is a kind of structural representation of connecting contact pin 102, in other embodiments of the invention, connecting contact pin 102 Structure can also convert.Such as, in another embodiment of the presently claimed invention, described DRAM attachment structure 1022 also may be used To include, it is positioned at least two arc extrusome (not shown) inside described contact pin body 2021.Certainly, in the present invention Other embodiments in, DRAM attachment structure 1022 can also have other structures, say, that can by other clamping The structure that mode is connected with the DRAM granule on external memory bar.For another example, in another embodiment of the presently claimed invention, described Pad attachment structure 1023, it is also possible to include cylinder insert structure, terrace with edge insert structure, cuboid insert structure etc. (figure Not shown in), for being connected with the pad on the circuit board of external memory by the way of grafting.
In another embodiment of the presently claimed invention, as a example by a kind of connecting contact pin of structure shown in Fig. 2, one is described The concrete structure of adapter.A kind of adapter as shown in Figure 3, including, connector body 301, four connecting contact pins 302, two Individual fixing screw 303.Described four connecting contact pins 302 are through connector body 301, two shell fragments and vertebral body insert structure respectively It is placed in the both sides up and down of described connector body 301.A fixing screw it is respectively provided with in the left and right sides of connector body 301 303, in order to adapter is fixed on the memory circuit board of outside.It should be noted that Fig. 3 merely provides one of which Connector construction, according to described fixing screw 303, described connector body 301, the change of described connecting contact pin 302, adapter Different structures can be presented.
As shown in Figure 4, embodiments provide a kind of direct insertion DRAM granule 401, including: DRAM body 4011 with And at least one the deriving structure body 4012 being positioned on described DRAM body.At least one deriving structure body 4012 described can pass through Held mode is connected on the adapter of outside.
In order to more intuitively show the structure of direct insertion DRAM granule, Fig. 5 shows direct insertion DRAM of one of which Grain, including, DRAM body 501 and four deriving structure bodies 502 being positioned on described DRAM body 501.Described deriving structure body On 502 adapters that can be connected to outside by the way of held.
See Fig. 3 and Fig. 5, in one embodiment of the invention, the direct insertion DRAM granule shown in Fig. 5 can be inserted In adapter shown in Fig. 3, so that both realize electrical connection.Such as, concrete mode includes: four in Fig. 5 be positioned at Deriving structure body 502 on described DRAM body 501 is inserted respectively between the shell fragment of connecting contact pin 302 shown in Fig. 3, described extraction The structure 502 clamping action by both sides shell fragment, is placed in connecting contact pin 302, it is achieved direct insertion DRAM granule and adapter Connection.
As shown in Figure 6, embodiments provide a kind of test device for internal memory, including the arbitrary shown company of Fig. 1 to Fig. 3 Connect device 601, memory bar 602, at least one DRAM granule 603 as shown in Figure 4,5.Each DRAM granule 603 is by least One deriving structure body is clamped in the described DRAM attachment structure of described adapter 601;The described weldering of described adapter 601 Dish attachment structure is connected with pad connecting groove on described memory bar.Described pad connecting groove, is positioned at treating of described memory bar Survey at DRAM granule.
In one embodiment of the invention, the structure of described memory bar 602 is illustrated with the structure shown in Fig. 7.As Shown in Fig. 7, described memory bar 602 includes, memory circuit board 701, two fixing screw holes 702, six pad connecting grooves 703.It should be noted that Fig. 7 merely provides a kind of structure of memory bar 602, according to memory circuit board, fixing screw hole, The change of pad connecting groove, memory bar can have more possible structure.
See Fig. 1 to Fig. 7, in one embodiment of the invention, the structure of described pad connecting groove 702 and described weldering The structure of dish attachment structure 2023 is corresponding, and when pad attachment structure 2023 is cone structure, described pad connecting groove 702 is Reverse taper groove structure.In the present embodiment, adapter as shown in Figure 3 passes through connecting contact pin 302, is inserted into as shown in Figure 7 Memory bar on pad connecting groove 703 in, and be fixed on memory circuit board 701 by two fixing screws 303, connect Two shell fragments of contact pin 302 upper end are connected with the deriving structure body 502 shown in Fig. 5 by clamping action, thus are formed in one Deposit test device.
As shown in Figure 8, embodiments provide the test device for internal memory that a kind of present invention of utilization proposes and carry out internal memory The method of test, including:
Step 801: testing tool is connected to the DRAM attachment structure of described adapter and the extraction of described DRAM granule The junction of structure;
Step 802: utilize described testing tool that each DRAM granule to be measured of memory bar is tested.
In the present embodiment, testing tool is chosen as oscillograph, and oscilloprobe is connected to the DRAM of described adapter The junction of the deriving structure body of attachment structure and described DRAM granule, on such as shell fragment, to be measured to each of memory bar DRAM granule carries out signal or power supply test.When CRO coupling cannot detect, can connect with cable, and the side of being extended to Just the position measured.
Below as a example by the test device for internal memory shown in Fig. 9, launch the method for testing of explanation internal memory.Described memory device bag Include memory bar 901, adapter 902 and direct insertion DRAM granule 903.As shown in Figure 10, described method includes step:
Step 1001: according to test needs, assessment needs the memory bank of test, determines the memory bank needing test Position;
In this step, according to test needs, determine the position of memory bank to be measured, mainly for doubtful problematic interior Deposit the memory bank at place.
Step 1002: assessment needs the position of the memory dram of test, can select a DRAM test on memory bar, The multiple DRAM on memory bar can also be selected to test;
In this step, determine the position of memory dram to be measured, a DRAM on memory bar can be tested, also Multiple DRAM on memory bar can be tested;
Step 1003: obtain test memory bar;
General DRAM granule be Surface Mount on memory circuit board, its signal and power pins are covered by DRAM granule, Cannot test by direct CRO coupling.Therefore, in this step, can directly make or obtain the test made before Use memory bar.As it is shown in figure 9, described memory bar 901 includes: pad connecting groove 9011, fixing screw hole 9012, main memory circuit Plate 9013.Described pad connecting groove 9011 is for being connected with adapter 902, and described fixing screw hole 9012, for connecting Device 902 is fixed on memory circuit board 9013.
Step 1004: obtain adapter;
Described adapter 902 includes: connecting contact pin 9021, connector body 9022, fixing screw 9023.
Wherein, described connecting contact pin 9021 includes: DRAM attachment structure 90213, and pad attachment structure 90211 and contact pin are originally Body 90212.
Described DRAM attachment structure 90213, including, it is positioned at two shell fragments inside described contact pin body 90212, Ke Yitong Cross the DRAM granule that the mode of clamping connects on external memory bar.It addition, described DRAM attachment structure 90213 can also include, Other can be by the way of clamping and external memory to be positioned at least two arc extrusome inside described contact pin body 90212 etc. The structure that DRAM granule on bar connects.
The structure of described pad connecting groove 9011 is corresponding with the structure of described pad attachment structure 90211, when described When pad attachment structure 90211 is cone structure, described pad connecting groove 9011 is reverse taper groove structure;When described pad When attachment structure 90211 is cylindrical structure, described pad connecting groove 9011 is cylinder groove.Described pad attachment structure 90211 can also include terrace with edge insert structure, and cuboid insert structure etc., for described connecting contact pin 9021 and external pads Fit tightly.Described pad attachment structure 90211, for the pad by the way of grafting and on external memory circuit board 9013 It is connected.
In order to realize the fixing of adapter 902, described adapter 902, also include: be positioned at described connector body 9022 On two fixing screws 9023, by being placed through the fixing screw hole on described connector body 9022, be connected to outside On memory circuit board 9013.By described fixation procedure, described adapter 902 can be stable in external memory circuit board 9013 On, it is simple to test.
Step 1005: obtain DRAM granule;
In this step, DRAM granule is a kind of direct insertion DRAM granule 903.Described direct insertion DRAM granule 903, bag Include: DRAM body 9031 and at least one the deriving structure body 9032 being positioned on described DRAM body, described at least one draw Go out structure 9032 to be connected to by the way of held on the adapter 902 of outside.Described one direct insertion DRAM granule 903, can be clamped between two shell fragments inside described contact pin body 90212, it is also possible to be clamped in and be positioned at institute State between at least two arc extrusome inside contact pin body 90212.Described one direct insertion DRAM granule 903, its structure Design exclusively for MEMTEST, it is simple to clamping, simple in construction and easily realizing.
Step 1006: be connected in memory bank by memory bar, tests signal and power supply at each pad of memory bar, And record data;
The test memory bar 901 of acquisition is connected in memory bank, at the pad connecting groove 9011 of memory bar 901 Signal and power supply are tested.And record data.In this step, testing tool is oscillograph.Will insert by CRO coupling Enter and at the pad connecting groove 9011 of vertebral body structure, signal and power supply are tested.
Step 1007: memory bar is connected with adapter, so that both good contacts, at the connecting contact pin of adapter Test signal and power supply, and record data;
In this step, adapter 902 is by the pad attachment structure 90211 on connecting contact pin 9021 and memory bar 901 It is connected, to guarantee both good contacts.CRO coupling is inserted at the connecting contact pin 9021 of adapter 902, carry out signal and Power supply test, and record data.
Step 1008: the data of step 1007 and step 1006 compared, draws the impact that described adapter brings;
The data of step 1007 and step 1006 are compared, it can be deduced that, described adapter 902 is for signal and electricity The impact of source test result.
Step 1009: by memory bar, adapter, DRAM granule couples together in order, surveys at connecting contact pin with oscillograph Trial signal and power supply, and record data;
In this step, adapter 902 is by the pad attachment structure 90211 on connecting contact pin 9021 and memory bar 901 On pad connecting groove 9011 be connected, by the DRAM attachment structure 90213 on described connecting contact pin 9021 and described DRAM Deriving structure body 9032 on granule 903 is connected.Thus, memory bar 901, adapter 902, DRAM granule 903 connects in order Come.CRO coupling is placed at connecting contact pin 9021, on a shell fragment in DRAM attachment structure 90213, carries out signal And power supply test, and record data.
Step 1010: contrast step 1009 and the test data of step 1008, draws final signal and power supply test knot Really;
In this step, by testing the contrast of data before and after adapter 902 is connected, adapter 902 is got rid of to test The interference of result, obtains final signal and power supply test result.By described comparison process, test result is made more truly to have Effect.
Step 1011: be estimated test result analyzing.
Internally deposited by above test result and be analyzed, it is judged that can test memory bar normally work, in order to take to arrange Execute and guarantee stablizing of whole system.
According to such scheme, various embodiments of the present invention, at least have the advantages that
1, the DRAM attachment structure of connecting contact pin one end of adapter is connected with DRAM granule to be measured, the connection of adapter The pad attachment structure of the contact pin other end is connected with external pads.By arranging adapter, by script Surface Mount on memory bar DRAM granule is separated from memory circuit board, in order to test the DRAM granule on memory bar.The present invention provides Scheme can be tested for each DRAM granule on memory bar.
2, it is held in DRAM attachment structure by the deriving structure body of direct insertion DRAM granule, it is achieved DRAM to be measured Grain and the connection of adapter, described clipping operation is simple, provides convenience for test.
3, the test device for internal memory being made up of memory bar, adapter, direct insertion DRAM granule, it is achieved that by DRAM granule from Separate on memory circuit board, DRAM granules one or more on memory bar are carried out signal and power supply test.This internal memory is surveyed Electricity testing device simple in construction, it is easy to accomplish.
It should be noted that in this article, the relational terms of such as first and second etc is used merely to an entity Or operation separates with another entity or operating space, and not necessarily require or imply existence between these entities or operation The relation of any this reality or order.And, term " includes ", " comprising " or its any other variant are intended to non- Comprising of exclusiveness, so that include that the process of a series of key element, method, article or equipment not only include those key elements, But also include other key elements being not expressly set out, or also include being consolidated by this process, method, article or equipment Some key elements.In the case of there is no more restriction, statement the key element " including a 〃 " and limiting, do not arrange Except there is also other same factor in including the process of described key element, method, article or equipment.
Last it should be understood that the foregoing is only presently preferred embodiments of the present invention, it is merely to illustrate the skill of the present invention Art scheme, is not intended to limit protection scope of the present invention.All made within the spirit and principles in the present invention any amendment, Equivalent, improvement etc., be all contained in protection scope of the present invention.

Claims (10)

1. an adapter, it is characterised in that including:
Connector body, at least one connecting contact pin;
Each described connecting contact pin includes contact pin body, is positioned at the dynamic random access memory of described contact pin body one end DRAM attachment structure, it is positioned at the pad attachment structure of the described contact pin body other end;Described DRAM attachment structure and described pad Attachment structure has conductive characteristic;
The contact pin body of each described connector pin penetrates described connector body, and make described DRAM attachment structure and Described pad attachment structure lays respectively at the both sides of described connector body;
Described DRAM attachment structure, for connecting the DRAM granule on external memory bar by the way of sandwich;
Described pad attachment structure, for connecting external pads by the way of grafting.
Adapter the most according to claim 1, it is characterised in that described DRAM attachment structure includes:
It is positioned at least two shell fragment inside described contact pin body;
Or,
It is positioned at least two arc extrusome inside described contact pin body.
Adapter the most according to claim 1, it is characterised in that described pad attachment structure includes:
Cone insert structure;
Or,
Cylinder insert structure.
4. according to described adapter arbitrary in claims 1 to 3, it is characterised in that
Described pad attachment structure, for being connected with the pad on the circuit board of external memory by the way of grafting.
5. according to described adapter arbitrary in Claims 1-4, it is characterised in that farther include: be positioned at described adapter The fixing screw of at least one on body, for the pad being connected on the circuit board of external memory.
6. a direct insertion DRAM granule, it is characterised in that including:
DRAM body and at least one the deriving structure body being positioned on described DRAM body;
At least one deriving structure body described can be connected on the adapter of outside by the way of held.
7. a test device for internal memory, it is characterised in that including:
Adapter as described in arbitrary in claim 1 to 5, memory bar, at least one DRAM as claimed in claim 6 Grain;
Each DRAM granule is clamped in the described DRAM attachment structure of described adapter by least one deriving structure body In;
The described pad attachment structure of described adapter is connected with pad connecting groove on described memory bar.
Device the most according to claim 7, it is characterised in that
Described pad connecting groove, is positioned at the DRAM granule to be measured of described memory bar.
9. the method that the test device for internal memory utilized described in claim 7 or 8 carries out MEMTEST, it is characterised in that bag Include:
Testing tool is connected to the connection of the DRAM attachment structure of described adapter and the deriving structure body of described DRAM granule Place;
Utilize described testing tool that each DRAM granule to be measured of memory bar is tested.
Method the most according to claim 9, it is characterised in that
Described test includes: signal testing, or power supply test.
CN201610634329.2A 2016-08-05 2016-08-05 A kind of adapter, direct insertion DRAM granule, test device for internal memory and method Pending CN106299786A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
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CN108564975A (en) * 2018-04-27 2018-09-21 济南浪潮高新科技投资发展有限公司 A kind of production method of ram disk and ram disk

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CN201251780Y (en) * 2008-07-18 2009-06-03 英业达科技有限公司 Internal memory test tool
CN201429631Y (en) * 2009-03-19 2010-03-24 张光荣 Memory bar protection test socket
CN103137210A (en) * 2011-11-23 2013-06-05 鸿富锦精密工业(深圳)有限公司 DDR signal testing auxiliary tool

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Publication number Priority date Publication date Assignee Title
US6981886B1 (en) * 2004-12-23 2006-01-03 Kingston Technology Corp. Sliding levered handles engaging and pushing memory modules into extender-card socket
CN201251780Y (en) * 2008-07-18 2009-06-03 英业达科技有限公司 Internal memory test tool
CN201429631Y (en) * 2009-03-19 2010-03-24 张光荣 Memory bar protection test socket
CN103137210A (en) * 2011-11-23 2013-06-05 鸿富锦精密工业(深圳)有限公司 DDR signal testing auxiliary tool

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108564975A (en) * 2018-04-27 2018-09-21 济南浪潮高新科技投资发展有限公司 A kind of production method of ram disk and ram disk

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