CN106299014B - A kind of parameter optimization method and platform of near-infrared single photon avalanche optoelectronic diode - Google Patents
A kind of parameter optimization method and platform of near-infrared single photon avalanche optoelectronic diode Download PDFInfo
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Abstract
The invention discloses a kind of parameter optimization method and platform of near-infrared single photon avalanche optoelectronic diode, correlation technique includes：Obtain the structural parameters at a temperature of predetermined work of the near-infrared single photon avalanche optoelectronic diode of input；According to structural parameters and the Electric Field Distribution of Gauss equation calculating near-infrared single photon avalanche optoelectronic diode is combined, and then obtains the avalanche probability of near-infrared single photon avalanche optoelectronic diode dynode layer each position；The intrinsic parameters of near-infrared single photon avalanche optoelectronic diode are calculated with Electric Field Distribution according to obtained avalanche probability.The program is suitable for all III V material systems using separate absorbent-gradual change-electric charge-multiplication (SAGCM) heterojunction structure, realizes the global optimization of single-photon avalanche photoelectric diode structure parameter and condition of work.
Description
Technical field
The present invention relates to quantum information technology field, more particularly to a kind of ginseng of near-infrared single photon avalanche optoelectronic diode
Number optimization method and platform.
Background technology
Single-photon detector is sensitivity highest faint light detection instrument, in the such as quantum communications, photon of many fields
Radar, laser imaging, fluorescence detection etc. have extensive and important application.
In near infrared band, single photon detection species main at present includes photomultiplier, single-photon avalanche photoelectricity two
Pole pipe, superconducting nano-wire single-photon detector, frequency upooaversion detector etc..Various detectors have its corresponding advantage and disadvantage,
For example the detection efficient of photomultiplier is low, noise is high, superconducting nano-wire single-photon detector detection efficient, dark counting, when
Between differentiate etc. and all to possess advantage in several performance indications, but need that the working environment of super low temperature refrigeration, cost are high, volume is big.And
Single-photon avalanche photodiode is because it does not need low super low temperature refrigeration, cost, small volume, is easy to the system integration, stable performance
A series of advantages such as reliable, have been widely used in such as practical quantum communications field.
In order to realize the detection of near-infrared single photon, single-photon avalanche photoelectric diode (Single-Photon
Avalanche Diode, hereinafter referred to as SPAD) need to be operated in Geiger mode angular position digitizer.The reverse-biased electricity at SPAD both ends in such a mode
Press and be more than its avalanche voltage, the electric-field intensity in SPAD PN junction reaches 1E5V/cm magnitudes.When single photon incides this PN
Pair of electrons hole pair can be produced in knot, electron hole pair accelerates two polar motions toward SPAD in the presence of highfield, at this
It can be collided during individual with lattice and ionize and produce increasing electron hole pair, so as to form avalanche effect, work as snow
Collapse after electric current exceedes the threshold value of reading circuit and be detected.
Currently, avalanche diode generally use separate absorbent-gradual change-electricity near infrared band single photon detection
The III-V material system of lotus-multiplication (SAGCM) heterojunction structure is including InGaAs/InP, InGaAs/InAlAs etc..However,
Many avalanche diode devices used in practice are originally used for Conventional optical communication, and single photon detection is not entered when device designs
Row optimization causes single photon detection poor performance and uniformity is poor.
The content of the invention
It is an object of the invention to provide a kind of parameter optimization method and platform of near-infrared single photon avalanche optoelectronic diode,
It is suitable for all III-V material systems using separate absorbent-gradual change-electric charge-multiplication (SAGCM) heterojunction structure, realizes
The global optimization of single-photon avalanche photoelectric diode structure parameter and condition of work.
The purpose of the present invention is achieved through the following technical solutions：
A kind of parameter optimization method of near-infrared single photon avalanche optoelectronic diode, including：
Obtain the structural parameters at a temperature of predetermined work of the near-infrared single photon avalanche optoelectronic diode of input；
According to structural parameters and the Electric Field Distribution of Gauss equation calculating near-infrared single photon avalanche optoelectronic diode is combined, is entered
And obtain the avalanche probability of near-infrared single photon avalanche optoelectronic diode dynode layer each position；
The intrinsic parameters of near-infrared single photon avalanche optoelectronic diode are calculated with Electric Field Distribution according to obtained avalanche probability.
The electric field point that near-infrared single photon avalanche optoelectronic diode is calculated according to structural parameters and combination Gauss equation
The expression formula of cloth is：
Above formula is changed under one-dimensional condition：
Wherein, ▽ is divergence, and E is electric-field intensity, and ρ is charge density, εiFor near-infrared single photon avalanche optoelectronic diode
The dielectric constant of i-th layer material, EiThe maximum field intensity calculated for foregoing Gauss equation, q are elementary charge unit, E (x)
For the electric-field intensity at the x of position, d is the thickness of layer where the x of position.
Calculating the formula of the avalanche probability of near-infrared single photon avalanche optoelectronic diode dynode layer each position includes：
In above formula, PeWith PhRespectively electronics and hole x' positions in near-infrared single photon avalanche optoelectronic diode dynode layer
Put the probability of triggering avalanche, αeWith αhRespectively electronics and hole x' in near-infrared single photon avalanche optoelectronic diode dynode layer
The ionization coefficient of opening position；
Then probability of the electronics with hole to the x position triggering avalanche in near-infrared single photon avalanche optoelectronic diode dynode layer
Pb(x') it is：
Pb(x')=1- (1-pe(x'))(1-ph(x'))；
Above-mentioned ionization coefficient αeWith αhCalculated according to electric-field intensity：
Wherein, F is the electric-field intensity of near-infrared single photon avalanche optoelectronic diode dynode layer, and k is Boltzmann constant, T
For predetermined work temperature；Eth_h=1.45eV,Eth_e
=1.60eV,
The intrinsic parameters of the near-infrared single photon avalanche optoelectronic diode include：Avalanche voltage, detection efficient and secret mark
Number.
The avalanche voltage is Pe=0 or P (0)h(W) voltage when=0；Wherein, W is near-infrared single photon avalanche optoelectronic
The gross thickness that all layers of diode.
The detection efficient PdCalculation formula be：
Pd=Pa·Pc·Pb；
Wherein, PaFor the absorbing probability of photon, it is expressed as：Pa=(1-R) (1-exp (- αabsD')), R is monochromatic light in formula
Son is in the reflectance factor of near-infrared single photon avalanche optoelectronic two level pipe surface, αabsFor near-infrared single photon avalanche optoelectronic diode
For absorbed layer to the absorption coefficient of single photon, d' is the thickness of absorbed layer；Pc=1；PbFor the probability of avalanche layer triggering avalanche.
The calculation formula of the secret mark number DCR is：
DCR=DCRtherm+DCRtun-dir+DCRtun-trap；
Wherein：
DCRthermFor dark counting caused by thermal excitation, calculation formula is：
In formula, niFor the carrier density in unit volume, τ is the life-span of carrier；
DCRtun-dirIt is for dark counting, calculation formula caused by direct tunnelling：
In formula, E is electric-field intensity,mr=2
(mcmlh)/(mc+mlh), q is elementary charge unit, EgFor the energy band of material, mcFor the quality of conduction band electron, mlhFor light hole
Quality；
DCRtun-trapIt is for dark counting, calculation formula caused by indirect tunnelling：
In formula,EB1、EB2Respectively valence band and defect state
Energy level difference, the energy level difference of conduction band and defect state, NcAnd NvThe density of states of conduction band and valence band is represented respectively.
A kind of parameter optimization platform of near-infrared single photon avalanche optoelectronic diode, it is characterised in that the platform is used for real
Existing foregoing method, the platform include：
Structural parameters acquisition module, for obtain input near-infrared single photon avalanche optoelectronic diode in predetermined work
At a temperature of structural parameters；
Electric Field Distribution and avalanche probability computing module, for calculating near-infrared list according to structural parameters and combination Gauss equation
The Electric Field Distribution of photon avalanches photoelectric diode, and then obtain near-infrared single photon avalanche optoelectronic diode dynode layer each position
Avalanche probability；
Intrinsic parameters computing module, for calculating near-infrared single photon snowslide according to obtained avalanche probability and Electric Field Distribution
The intrinsic parameters of photoelectric diode.
As seen from the above technical solution provided by the invention, by the physical analysis to single photon detection process and build
Mould, can be with the avalanche voltage of calculating device, avalanche voltage with the change of device architecture, avalanche voltage variation with temperature, detection
The parameters such as efficiency and dark counting, and OVERALL OPTIMIZA-TION DESIGN FOR and performance balance are carried out to these parameters.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Accompanying drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for this
For the those of ordinary skill in field, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of parameter optimization method of near-infrared single photon avalanche optoelectronic diode provided in an embodiment of the present invention
Flow chart；
Fig. 2 is the structural representation of InGaAs/InP SPAD devices provided in an embodiment of the present invention；
Fig. 3 is parameter optimisation procedure schematic diagram provided in an embodiment of the present invention；
Fig. 4 is the avalanche probability distribution schematic diagram of electronics provided in an embodiment of the present invention and hole in dynode layer；
Fig. 5 is change curve schematic diagram of the avalanche voltage provided in an embodiment of the present invention with dynode layer thickness；
Fig. 6 is avalanche voltage variation with temperature curve synoptic diagram provided in an embodiment of the present invention；
Fig. 7 is change curve schematic diagram of the detection efficient provided in an embodiment of the present invention with overvoltage；
Fig. 8 is change curve schematic diagram of the dark counting provided in an embodiment of the present invention with overvoltage；
Fig. 9 is that a kind of parameter optimization platform of near-infrared single photon avalanche optoelectronic diode provided in an embodiment of the present invention shows
It is intended to.
Embodiment
With reference to the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.Based on this
The embodiment of invention, the every other implementation that those of ordinary skill in the art are obtained under the premise of creative work is not made
Example, belongs to protection scope of the present invention.
The embodiment of the present invention provides a kind of parameter optimization method of near-infrared single photon avalanche optoelectronic diode, such as Fig. 1 institutes
Show, it mainly comprises the following steps：
Step 11, the structure at a temperature of predetermined work for the near-infrared single photon avalanche optoelectronic diode for obtaining input are joined
Number.
Step 12, according to structural parameters and combine Gauss equation calculate near-infrared single photon avalanche optoelectronic diode electric field
Distribution, and then obtain the avalanche probability of near-infrared single photon avalanche optoelectronic diode dynode layer each position.
Step 13, the sheet according to obtained avalanche probability and Electric Field Distribution calculating near-infrared single photon avalanche optoelectronic diode
Levy parameter.
The such scheme of the embodiment of the present invention, it is suitable for all using separate absorbent-gradual change-electric charge-multiplication
(SAGCM) the III-V material system of heterojunction structure, such as InGaAs/InP, InGaAs/InAlAs etc..
Exemplary, the structural representation of InGaAs/InP SPAD devices refers to Fig. 2, and it mainly includes：InP substrate
Layer, InGaAs absorbed layers, InGaAsP transition zones, InP charge layers, InP dynode layers.InGaAs absorbed layers are used to absorb near-infrared
Single photon.InGaAsP transition zones, which are inserted among InP charge layers and InGaAs layers, to be used to reduce the discontinuity between energy level,
So as to reduce capture of the carrier in interface.Existing fringing field and the InP multiplication that InP charge layers are used in smooth InGaAs absorbed layers
High electric field in layer, so as to reduce the caused dark counting in InGaAs layers.
For the ease of understanding the present invention, 3 pairs of parameter optimisation procedures elaborate below in conjunction with the accompanying drawings.
As shown in figure 3, parameter optimisation procedure mainly includes：The structural parameters of input are obtained, calculate Electric Field Distribution, calculate snow
Probability is collapsed, calculates intrinsic parameters, including：Avalanche voltage, detection efficient, dark counting etc..It is specific as follows：
1st, the structural parameters of input are obtained.
In the embodiment of the present invention, the structural parameters of input are the structural parameters at a temperature of predetermined work, are mainly included：SPAD
Material property, thickness, doping concentration, reversed bias voltage and the other specification of each layer.
2nd, Electric Field Distribution is calculated.
In the embodiment of the present invention, each layer Electric Field Distributions of SPAD are calculated by solving following Gauss equation, formula is as follows：
Wherein, ▽ is divergence, and E is electric-field intensity, and ρ is charge density, εiFor near-infrared single photon avalanche optoelectronic diode
The dielectric constant of i-th layer material.
Above formula can be changed under one-dimensional condition：
Wherein, EiThe maximum field intensity calculated for foregoing Gauss equation, q are elementary charge unit, and E (x) is position x
The electric-field intensity at place, d are the thickness of layer where the x of position.
The Electric Field Distribution that this step calculates has a typical feature, i.e., very big in dynode layer electric-field intensity, and
Absorbed layer electric-field intensity is relatively small, and this characteristic causes SPAD devices to suppress dark counting while high detection efficient is kept.
3rd, avalanche probability is calculated.
Obtain further calculating after Electric Field Distribution the avalanche probability of each position of dynode layer, avalanche probability refers to one
The probability of the multiplicative process of electronics or hole initiation self―sustaining formula, formula are as follows：
In above formula, PeWith PhRespectively electronics and hole x' positions in near-infrared single photon avalanche optoelectronic diode dynode layer
Put the probability of triggering avalanche, αeWith αhRespectively electronics and hole x' in near-infrared single photon avalanche optoelectronic diode dynode layer
The ionization coefficient of opening position；
Then electronics and hole in near-infrared single photon avalanche optoelectronic diode dynode layer x' location triggered snowslides it is general
Rate Pb(x') it is：
Pb(x')=1- (1-pe(x'))(1-ph(x'))；
Above-mentioned ionization coefficient αeWith αhCalculated according to electric-field intensity：
Wherein, F is the electric-field intensity of near-infrared single photon avalanche optoelectronic diode dynode layer, and k is Boltzmann constant, T
For predetermined work temperature；Eth_h=1.45eV,Eth_e
=1.60eV,
Fig. 4 is that a typical avalanche probability is distributed result of calculation in the embodiment of the present invention, as can be seen from the figure electronics
Trigger the probability of snowslide entirely different with hole, the triggering avalanche process that hole can be more efficient.
4th, avalanche voltage is calculated.
The avalanche voltage is the voltage under particular case, and in embodiments of the present invention, described avalanche voltage is Pe(0)
=0 or Ph(W) voltage when=0, wherein, W is the gross thickness of all layers of near-infrared single photon avalanche optoelectronic diode.
As shown in figure 5, as the increase SPAD of dynode layer thickness avalanche voltage is consequently increased.As shown in fig. 6, with
The rise SPAD of temperature avalanche voltage is consequently increased.
5th, detection efficient is calculated.
The process that SPAD devices are detected to single photon is in chronological sequence sequentially segmented into the following steps：
1) in the absorbed layer of device, single incident photon is absorbed and produces pair of electrons hole pair.
2) avalanche layer is entered after the hole of electron hole centering is in the presence of electric field by graded bedding and charge layer.
3) hole of avalanche layer is entered in the presence of highfield, and colliding to ionize with lattice atoms produces electronics sky
Cave pair, these electron holes produce new electron hole pair in the effect of electric field, ultimately form avalanche effect.
4) avalanche current caused by avalanche process is detected higher than after the threshold value of reading circuit.
First three step of said process can all have influence on detection efficient, and detection efficient can be drawn by the Physical Process Analyses
Calculating formula：
Pd=Pa·Pc·Pb
In above formula, PaFor the absorbing probability of photon, PbFor the probability of avalanche layer triggering avalanche, PcExpression carrier (including electricity
Son and hole) collection efficiency.
Wherein, PaIt can be calculated by following formula：
Pa=(1-R) (1-exp (- αabsD')),
In formula, R is single photon in the reflectance factor of near-infrared single photon avalanche optoelectronic two level pipe surface, αabsFor near-infrared
For single-photon avalanche photoelectric diode absorbed layer to the absorption coefficient of single photon, d' is the thickness of absorbed layer；
PcThe collection efficiency of carrier is represented, because SPAD in absorbed layer, transition zone, charge layer has electric field, single photon
The hole caused by absorbing can get over to dynode layer substantially under the acceleration of electric field, assume P without loss of generalityc=1
PbFor the probability of avalanche layer triggering avalanche, i.e., the avalanche probability calculated above.
As shown in fig. 7, be detection efficient with overvoltage change curve schematic diagram.
6th, secret mark number is calculated.
In the embodiment of the present invention, the origin of secret mark number has following several：
1) thermogenetic dark counting.Valence-band electrons transit to conduction band due to thermal excitation in this mechanism, so as to produce one
To electron hole pair, dark counting caused by this mechanism is defined as DCRtherm, its calculation formula is：
In formula, niFor the carrier density in unit volume, τ is the life-span of carrier.
2) dark counting directly caused by tunnelling.Valence-band electrons are direct tunneling in the presence of electric field in this mechanism leads
In band, so as to produce pair of electrons hole pair, dark counting caused by this mechanism is defined as DCRtun-dir, its calculation formula is：
In formula, E is electric-field intensity,mr=2
(mcmlh)/(mc+mlh), q is elementary charge unit,For Planck's constant, EgFor the energy band of material, mcFor the matter of conduction band electron
Amount, mlhFor the quality of light hole；
3) dark counting caused by indirect tunnelling.Due to impurity and the presence valence-band electrons elder generation tunnelling of defect in this mechanism
Energy level into forbidden band, then it is tunneling to again in conduction band and forms electron hole pair, dark counting caused by this mechanism is
DCRtun-trap, its calculation formula is：
In formula,EB1、EB2Respectively valence band and defect state
Energy level difference, the energy level difference of conduction band and defect state, NcAnd NvThe density of states of conduction band and valence band is represented respectively.
With reference to the contribution of above-mentioned three kinds of mechanism, its summation is the dark counting of SPAD devices：
DCR=DCRtherm+DCRtun-dir+DCRtun-trap。
As shown in figure 8, be dark counting with overvoltage change curve schematic diagram.
Through the above description of the embodiments, those skilled in the art can be understood that above-described embodiment can
To be realized by software, the mode of necessary general hardware platform can also be added by software to realize.Based on such understanding,
The technical scheme of above-described embodiment can be embodied in the form of software product, the software product can be stored in one it is non-easily
In the property lost storage medium (can be CD-ROM, USB flash disk, mobile hard disk etc.), including some instructions are causing a computer to set
Standby (can be personal computer, server, or network equipment etc.) performs the method described in each embodiment of the present invention.
Another embodiment of the present invention also provides a kind of parameter optimization platform of near-infrared single photon avalanche optoelectronic diode,
The platform can be used for the method described in previous embodiment, as shown in figure 9, the platform mainly includes：
Structural parameters acquisition module, for obtain input near-infrared single photon avalanche optoelectronic diode in predetermined work
At a temperature of structural parameters；
Electric Field Distribution and avalanche probability computing module, for calculating near-infrared list according to structural parameters and combination Gauss equation
The Electric Field Distribution of photon avalanches photoelectric diode, and then obtain near-infrared single photon avalanche optoelectronic diode dynode layer each position
Avalanche probability；
Intrinsic parameters computing module, for calculating near-infrared single photon snowslide according to obtained avalanche probability and Electric Field Distribution
The intrinsic parameters of photoelectric diode.
It should be noted that the specific implementation for the function that each functional module included in above-mentioned platform is realized exists
Have a detailed description in each embodiment above, therefore repeated no more herein.
It is apparent to those skilled in the art that for convenience and simplicity of description, only with above-mentioned each function
The division progress of module, can be as needed and by above-mentioned function distribution by different function moulds for example, in practical application
Block is completed, i.e., the internal structure of platform is divided into different functional modules, to complete all or part of work(described above
Energy.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto,
Any one skilled in the art is in the technical scope of present disclosure, the change or replacement that can readily occur in,
It should all be included within the scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of claims
Enclose and be defined.
Claims (8)
- A kind of 1. parameter optimization method of near-infrared single photon avalanche optoelectronic diode, it is characterised in that including：Obtain the structural parameters at a temperature of predetermined work of the near-infrared single photon avalanche optoelectronic diode of input；According to structural parameters and the Electric Field Distribution of Gauss equation calculating near-infrared single photon avalanche optoelectronic diode is combined, and then is obtained To the avalanche probability of near-infrared single photon avalanche optoelectronic diode dynode layer each position；The intrinsic parameters of near-infrared single photon avalanche optoelectronic diode are calculated with Electric Field Distribution according to obtained avalanche probability；Wherein, calculating the formula of the avalanche probability of near-infrared single photon avalanche optoelectronic diode dynode layer each position includes：<mrow> <mfrac> <mrow> <msub> <mi>dP</mi> <mi>e</mi> </msub> </mrow> <mrow> <mi>d</mi> <mi>x</mi> </mrow> </mfrac> <mo>=</mo> <mrow> <mo>(</mo> <mn>1</mn> <mo>-</mo> <msub> <mi>P</mi> <mi>e</mi> </msub> <mo>)</mo> </mrow> <msub> <mi>&alpha;</mi> <mi>e</mi> </msub> <mo>&lsqb;</mo> <msub> <mi>P</mi> <mi>e</mi> </msub> <mo>+</mo> <msub> <mi>P</mi> <mi>h</mi> </msub> <mo>-</mo> <msub> <mi>P</mi> <mi>e</mi> </msub> <mo>&CenterDot;</mo> <msub> <mi>P</mi> <mi>h</mi> </msub> <mo>&rsqb;</mo> <mo>;</mo> </mrow><mrow> <mfrac> <mrow> <msub> <mi>dP</mi> <mi>h</mi> </msub> </mrow> <mrow> <mi>d</mi> <mi>x</mi> </mrow> </mfrac> <mo>=</mo> <mo>-</mo> <mrow> <mo>(</mo> <mn>1</mn> <mo>-</mo> <msub> <mi>P</mi> <mi>h</mi> </msub> <mo>)</mo> </mrow> <msub> <mi>&alpha;</mi> <mi>h</mi> </msub> <mo>&lsqb;</mo> <msub> <mi>P</mi> <mi>e</mi> </msub> <mo>+</mo> <msub> <mi>P</mi> <mi>h</mi> </msub> <mo>-</mo> <msub> <mi>P</mi> <mi>e</mi> </msub> <mo>&CenterDot;</mo> <msub> <mi>P</mi> <mi>h</mi> </msub> <mo>&rsqb;</mo> <mo>;</mo> </mrow>In above formula, PeWith PhRespectively electronics touches x' positions with hole in near-infrared single photon avalanche optoelectronic diode dynode layer Send out the probability of snowslide, αeWith αhRespectively electronics and hole x' positions in near-infrared single photon avalanche optoelectronic diode dynode layer The ionization coefficient at place；Then probability P of the electronics with hole to the x position triggering avalanche in near-infrared single photon avalanche optoelectronic diode dynode layerb (x') it is：Pb(x')=1- (1-pe(x'))(1-ph(x'))。
- 2. a kind of parameter optimization method of near-infrared single photon avalanche optoelectronic diode according to claim 1, its feature It is, the Electric Field Distribution that near-infrared single photon avalanche optoelectronic diode is calculated according to structural parameters and combination Gauss equation Expression formula is：<mrow> <mo>&dtri;</mo> <mo>&CenterDot;</mo> <mi>E</mi> <mo>=</mo> <mfrac> <mi>&rho;</mi> <msub> <mi>&epsiv;</mi> <mi>i</mi> </msub> </mfrac> <mo>;</mo> </mrow>Above formula is changed under one-dimensional condition：<mrow> <mi>E</mi> <mrow> <mo>(</mo> <mi>x</mi> <mo>)</mo> </mrow> <mo>=</mo> <msub> <mi>E</mi> <mi>i</mi> </msub> <mo>-</mo> <mfrac> <mrow> <mi>q</mi> <mi>d</mi> </mrow> <msub> <mi>&epsiv;</mi> <mi>i</mi> </msub> </mfrac> <mi>x</mi> <mo>;</mo> </mrow>Wherein, ▽ is divergence, and E is electric-field intensity, and ρ is charge density, εiFor i-th layer of near-infrared single photon avalanche optoelectronic diode The dielectric constant of material, EiThe maximum field intensity calculated for foregoing Gauss equation, q are elementary charge unit, and E (x) is position The electric-field intensity at x is put, d is the thickness of layer where the x of position.
- 3. a kind of parameter optimization method of near-infrared single photon avalanche optoelectronic diode according to claim 1, its feature It is, above-mentioned ionization coefficient αeWith αhCalculated according to electric-field intensity：<mrow> <msub> <mi>&alpha;</mi> <mi>h</mi> </msub> <mrow> <mo>(</mo> <mi>F</mi> <mo>,</mo> <mi>T</mi> <mo>)</mo> </mrow> <mo>=</mo> <mfrac> <mi>F</mi> <msub> <mi>E</mi> <mrow> <mi>t</mi> <mi>h</mi> <mo>_</mo> <mi>h</mi> </mrow> </msub> </mfrac> <mi>exp</mi> <mrow> <mo>(</mo> <mo>-</mo> <mfrac> <msub> <mi>E</mi> <mrow> <mi>t</mi> <mi>h</mi> <mo>_</mo> <mi>h</mi> </mrow> </msub> <mrow> <mfrac> <msup> <mrow> <mo>(</mo> <msub> <mi>F&lambda;</mi> <mi>h</mi> </msub> <mo>)</mo> </mrow> <mn>2</mn> </msup> <mrow> <mn>3</mn> <msub> <mi>E</mi> <msub> <mi>P</mi> <mi>h</mi> </msub> </msub> </mrow> </mfrac> <mo>+</mo> <msub> <mi>F&lambda;</mi> <mi>h</mi> </msub> <mo>+</mo> <mi>k</mi> <mi>T</mi> </mrow> </mfrac> <mo>)</mo> </mrow> <mo>;</mo> </mrow><mrow> <msub> <mi>&alpha;</mi> <mi>e</mi> </msub> <mrow> <mo>(</mo> <mi>F</mi> <mo>,</mo> <mi>T</mi> <mo>)</mo> </mrow> <mo>=</mo> <mfrac> <mi>F</mi> <msub> <mi>E</mi> <mrow> <mi>t</mi> <mi>h</mi> <mo>_</mo> <mi>e</mi> </mrow> </msub> </mfrac> <mi>exp</mi> <mrow> <mo>(</mo> <mo>-</mo> <mfrac> <msub> <mi>E</mi> <mrow> <mi>t</mi> <mi>h</mi> <mo>_</mo> <mi>e</mi> </mrow> </msub> <mrow> <mfrac> <msup> <mrow> <mo>(</mo> <msub> <mi>F&lambda;</mi> <mi>e</mi> </msub> <mo>)</mo> </mrow> <mn>2</mn> </msup> <mrow> <mn>3</mn> <msub> <mi>E</mi> <msub> <mi>P</mi> <mi>e</mi> </msub> </msub> </mrow> </mfrac> <mo>+</mo> <msub> <mi>F&lambda;</mi> <mi>e</mi> </msub> <mo>+</mo> <mi>k</mi> <mi>T</mi> </mrow> </mfrac> <mo>)</mo> </mrow> <mrow> <mo>(</mo> <msub> <mi>c</mi> <mi>e</mi> </msub> <mi>T</mi> <mo>+</mo> <msub> <mi>d</mi> <mi>e</mi> </msub> <mo>)</mo> </mrow> <mo>;</mo> </mrow>Wherein, F is the electric-field intensity of near-infrared single photon avalanche optoelectronic diode dynode layer, and k is Boltzmann constant, and T is pre- Determine operating temperature；Eth_h=1.45eV,Eth_e= 1.60eV
- 4. a kind of parameter optimization method of near-infrared single photon avalanche optoelectronic diode according to claim 1 or 3, it is special Sign is that the intrinsic parameters of the near-infrared single photon avalanche optoelectronic diode include：Avalanche voltage, detection efficient and secret mark Number.
- 5. a kind of parameter optimization method of near-infrared single photon avalanche optoelectronic diode according to claim 4, its feature It is, the avalanche voltage is Pe=0 or P (0)h(W) voltage when=0；Wherein, W is near-infrared single photon avalanche optoelectronic two level Manage all layers of gross thickness.
- 6. a kind of parameter optimization method of near-infrared single photon avalanche optoelectronic diode according to claim 4, its feature It is, the detection efficient PdCalculation formula be：Pd=Pa·Pc·Pb；Wherein, PaFor the absorbing probability of photon, it is expressed as：Pa=(1-R) (1-exp (- αabsD')), R is that single photon exists in formula The reflectance factor of near-infrared single photon avalanche optoelectronic two level pipe surface, αabsAbsorbed for near-infrared single photon avalanche optoelectronic diode For layer to the absorption coefficient of single photon, d' is the thickness of absorbed layer；Pc=1；PbFor the probability of avalanche layer triggering avalanche.
- 7. a kind of parameter optimization method of near-infrared single photon avalanche optoelectronic diode according to claim 4, its feature It is, the calculation formula of the secret mark number DCR is：DCR=DCRtherm+DCRtun-dir+DCRtun-trap；Wherein：DCRthermFor dark counting caused by thermal excitation, calculation formula is：<mrow> <msub> <mi>DCR</mi> <mrow> <mi>t</mi> <mi>h</mi> <mi>e</mi> <mi>r</mi> <mi>m</mi> </mrow> </msub> <mo>=</mo> <mfrac> <msub> <mi>n</mi> <mi>i</mi> </msub> <mi>&tau;</mi> </mfrac> <mo>;</mo> </mrow>In formula, niFor the carrier density in unit volume, τ is the life-span of carrier；DCRtun-dirIt is for dark counting, calculation formula caused by direct tunnelling：<mrow> <msub> <mi>DCR</mi> <mrow> <mi>t</mi> <mi>u</mi> <mi>n</mi> <mo>-</mo> <mi>d</mi> <mi>i</mi> <mi>r</mi> </mrow> </msub> <mo>=</mo> <msup> <mi>AE</mi> <mn>2</mn> </msup> <mi>exp</mi> <mrow> <mo>(</mo> <mfrac> <mrow> <mo>-</mo> <msubsup> <mi>BE</mi> <mi>g</mi> <mrow> <mn>3</mn> <mo>/</mo> <mn>2</mn> </mrow> </msubsup> </mrow> <mi>E</mi> </mfrac> <mo>)</mo> </mrow> <mo>;</mo> </mrow>In formula, E is electric-field intensity,mr=2 (mcmlh)/(mc+mlh), q is elementary charge unit, EgFor the energy band of material, mcFor the quality of conduction band electron, mlhFor light hole Quality；DCRtun-trapIt is for dark counting, calculation formula caused by indirect tunnelling：<mrow> <msub> <mi>DCR</mi> <mrow> <mi>t</mi> <mi>u</mi> <mi>n</mi> <mo>-</mo> <mi>t</mi> <mi>r</mi> <mi>a</mi> <mi>p</mi> </mrow> </msub> <mo>=</mo> <mfrac> <mrow> <msup> <mi>AE</mi> <mn>2</mn> </msup> <msub> <mi>N</mi> <mi>T</mi> </msub> <mi>exp</mi> <mrow> <mo>(</mo> <mfrac> <mrow> <mo>-</mo> <msub> <mi>B</mi> <mn>1</mn> </msub> <msubsup> <mi>E</mi> <mrow> <mi>B</mi> <mn>1</mn> </mrow> <mrow> <mn>3</mn> <mo>/</mo> <mn>2</mn> </mrow> </msubsup> <mo>+</mo> <msub> <mi>B</mi> <mn>2</mn> </msub> <msubsup> <mi>E</mi> <mrow> <mi>B</mi> <mn>2</mn> </mrow> <mrow> <mn>3</mn> <mo>/</mo> <mn>2</mn> </mrow> </msubsup> </mrow> <mi>E</mi> </mfrac> <mo>)</mo> </mrow> </mrow> <mrow> <msub> <mi>N</mi> <mi>V</mi> </msub> <mi>exp</mi> <mi> </mi> <mi>exp</mi> <mrow> <mo>(</mo> <mfrac> <mrow> <mo>-</mo> <msub> <mi>B</mi> <mn>1</mn> </msub> <msubsup> <mi>E</mi> <mrow> <mi>B</mi> <mn>1</mn> </mrow> <mrow> <mn>3</mn> <mo>/</mo> <mn>2</mn> </mrow> </msubsup> </mrow> <mi>E</mi> </mfrac> <mo>)</mo> </mrow> <mo>+</mo> <msub> <mi>N</mi> <mi>C</mi> </msub> <mi>exp</mi> <mi> </mi> <mi>exp</mi> <mrow> <mo>(</mo> <mfrac> <mrow> <mo>-</mo> <msub> <mi>B</mi> <mn>2</mn> </msub> <msubsup> <mi>E</mi> <mrow> <mi>B</mi> <mn>2</mn> </mrow> <mrow> <mn>3</mn> <mo>/</mo> <mn>2</mn> </mrow> </msubsup> </mrow> <mi>E</mi> </mfrac> <mo>)</mo> </mrow> </mrow> </mfrac> </mrow>In formula,EB1、EB2The respectively energy of valence band and defect state The energy level difference of differential, conduction band and defect state, NcAnd NvThe density of states of conduction band and valence band is represented respectively.
- 8. a kind of parameter optimization platform of near-infrared single photon avalanche optoelectronic diode, it is characterised in that the platform is used to realize Method described in claim any one of 1-7, the platform include：Structural parameters acquisition module, for obtain input near-infrared single photon avalanche optoelectronic diode in predetermined work temperature Under structural parameters；Electric Field Distribution and avalanche probability computing module, for calculating near-infrared single photon according to structural parameters and combination Gauss equation The Electric Field Distribution of avalanche optoelectronic diode, and then obtain the snowslide of near-infrared single photon avalanche optoelectronic diode dynode layer each position Probability；Intrinsic parameters computing module, for calculating near-infrared single photon avalanche optoelectronic according to obtained avalanche probability and Electric Field Distribution The intrinsic parameters of diode.
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