CN106298999A - A kind of flexible unitary silicon film solar batteries and preparation method thereof - Google Patents
A kind of flexible unitary silicon film solar batteries and preparation method thereof Download PDFInfo
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- CN106298999A CN106298999A CN201610760822.9A CN201610760822A CN106298999A CN 106298999 A CN106298999 A CN 106298999A CN 201610760822 A CN201610760822 A CN 201610760822A CN 106298999 A CN106298999 A CN 106298999A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 50
- 239000010703 silicon Substances 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 53
- 239000010408 film Substances 0.000 claims abstract description 42
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 38
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000010931 gold Substances 0.000 claims abstract description 30
- 229910052737 gold Inorganic materials 0.000 claims abstract description 30
- 230000008021 deposition Effects 0.000 claims abstract description 25
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 22
- 239000011651 chromium Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 17
- 239000011574 phosphorus Substances 0.000 claims abstract description 17
- 238000000137 annealing Methods 0.000 claims description 33
- 239000011265 semifinished product Substances 0.000 claims description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 239000011259 mixed solution Substances 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 6
- -1 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000000203 mixture Substances 0.000 abstract description 3
- XUIMIQQOPSSXEZ-NJFSPNSNSA-N silicon-30 atom Chemical compound [30Si] XUIMIQQOPSSXEZ-NJFSPNSNSA-N 0.000 description 7
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
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- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- CEJLBZWIKQJOAT-UHFFFAOYSA-N dichloroisocyanuric acid Chemical compound ClN1C(=O)NC(=O)N(Cl)C1=O CEJLBZWIKQJOAT-UHFFFAOYSA-N 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229940126680 traditional chinese medicines Drugs 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
A kind of flexible unitary silicon film solar batteries of the present invention and preparation method thereof, the composition structure of solaode is followed successively by substrate, aluminum electrode, thin layer and gold electrode, aluminum electrode and gold electrode are arranged at thin layer both sides respectively by the way of deposition, aluminum electrode is arranged in substrate, wherein, thin layer includes boracic monocrystal silicon, phosphorus source and chromium thin film, and on chromium thin film, deposition has gold electrode, the back side of boracic monocrystal silicon to be provided with aluminum electrode.Thus by improving the adaptability of fexible film, so that thin film is applied to different base materials, in order to realize economical, quickly, can the flexible thin-film solar cell of large-area manufacturing.
Description
Technical field
The present invention relates to area of solar cell, specifically, be that one is suitable to improve the adaptive monocrystalline of fexible film
Silicon film solar batteries and preparation method thereof.
Background technology
Along with gradually exhausting of the non-renewable resources such as oil and coal, the utilization of regenerative resource and exploitation seem more to come
The most urgent, the safest during wherein solar energy power generating has become as regenerative resource, environmental protection and most potential competitor.
Solaode, as solar energy is converted directly into the device of electric energy, is made up of PN junction and upper and lower electrode, produces under illumination
Electronics and hole move to different directions under PN junction or hetero-junctions space electric field effect, thus form photovoltage and electricity
Stream.
The solaode of the most all commercial mass production, is all using silicon as making material.Silicon solar cell divides
For monocrystaline silicon solar cell, polysilicon solar cell and non-crystal silicon solar cell three kinds.Wherein, mono-crystalline silicon solar electricity
Pond has the highest conversion efficiency, still occupies leading position in large-scale application and commercial production, but due to by monocrystal silicon material
Material price and the impact of the most loaded down with trivial details battery process, cause monocrystal silicon cost price to remain high, want it is greatly lowered
Cost is extremely difficult.
Flexible silicon thin-film solar cells has high power/weight ratio, softness, collapsible, design is simple, preparation cost is low
With the feature such as be easy to carry.Through entering the research and development of several years, the manufacturing technology of flexible silicon thin-film solar cells and application neck
Territory is achieved with huge breakthrough, but there is also some defects, and such as optical-electronic conversion efficiency is low, decline for electrical stability is weak, photic
Move back the problems such as effect.
Summary of the invention
Present invention is primarily targeted at a kind of flexible unitary silicon film solar batteries of offer and preparation method thereof, it leads to
Cross the adaptability improving fexible film, so that thin film is applied to different base materials, in order to realize economical, quickly, can
The flexible thin-film solar cell of large-area manufacturing.
For reaching object above, the technical solution used in the present invention is: a kind of flexible unitary silicon film solar batteries, institute
The composition structure stating solaode is followed successively by substrate, aluminum electrode, thin layer and gold electrode, described aluminum electrode and described gold electricity
Pole is arranged at described thin layer both sides respectively by the way of deposition, and described aluminum electrode is arranged in described substrate, wherein, described
Thin layer includes boracic monocrystal silicon, phosphorus source and chromium thin film, and on described chromium thin film, deposition has described gold electrode, described containing boron single crystal
The back side of silicon is provided with described aluminum electrode.
According to one embodiment of the invention, the thickness of described aluminum electrode is 50～80nm.
According to one embodiment of the invention, the thickness of described chromium thin film is 10～20nm.
According to one embodiment of the invention, the thickness of the described au electrode thin membrane of formation is 60～90nm.
According to one embodiment of the invention, described boracic monocrystal silicon is boron doped single crystal silicon thin film.
According to one embodiment of the invention, phosphorus source is P452.
A kind of preparation method of flexible unitary silicon film solar batteries, it includes step:
Boracic monocrystal silicon is placed in the mixed solution being made up of perchloric acid and hydrogen peroxide immersion 10～30 minutes by S100,
For the organic impurities of the described boracic monocrystalline silicon surface of removing, rinse with water again after taking-up and dry, wherein, the temperature of mixed solution
Degree is 50～80 DEG C；
Phosphorus source is spun on boracic monocrystalline silicon surface by S200, then is positioned at 100～150 DEG C heating 10～20 minutes, with
After be positioned in the diffusion furnace of 800～1000 DEG C diffusion 2～5 minutes；
S300 makes sorting hole template by litho machine in surface of semi-finished, then is corroded by deep reactive ion etch technology
Surface single crystal silicon is until exposing silicon dioxide intermediate layer；
S400 semi-finished product are soaked in concentration be 10～20% hydrofluoric acid solution in 12～24 hours；
S500 passes through the electro beam physics vapour deposition system boracic monocrystal silicon backside deposition aluminum nano thin-film at semi-finished product,
Forming aluminum electrode, then anneal in a nitrogen environment, annealing temperature is 350～400 DEG C, and annealing time is 15～30 minutes；
S600 prepares the template of top electrode by litho machine in surface of semi-finished, then passes through electro beam physics vapour deposition
System is deposition chromium thin film in end face template, then deposits gold nanometer film on the surface of chromium thin film, enters the most in a nitrogen environment
Row annealing, annealing temperature is 300～350 DEG C, and annealing time is 5～10 minutes；And
The solaode with end face gold electrode and back aluminium electrode made is transferred in substrate by S700, described
Aluminum electrode is arranged in substrate, prepares described flexible unitary silicon film solar batteries.
According to one embodiment of the invention, described substrate is selected from glass, metallic film, polyethylene terephthalate, gathers
One in dimethyl siloxane and flexible stainless steel film.
Accompanying drawing explanation
Fig. 1 is the structural representation of flexible unitary silicon film solar batteries according to a preferred embodiment of the present invention
Figure.
Fig. 2 is the performance test of flexible unitary silicon film solar batteries according to a preferred embodiment of the present invention
Figure.
Description of reference numerals
1 solaode 10 substrate 20 aluminum electrode 30 boracic monocrystal silicon
40 phosphorus source 50 chromium thin film 60 gold electrodes
Detailed description of the invention
Hereinafter describe and be used for disclosing the present invention so that those skilled in the art are capable of the present invention.Below describe in excellent
Select embodiment to be only used as citing, it may occur to persons skilled in the art that other obvious modification.
As shown in Figure 1 be a kind of flexible unitary silicon film solar batteries 1, the composition structure of described solaode 1
Being followed successively by substrate 10, aluminum electrode 20, thin layer and gold electrode 60, described aluminum electrode 20 and described gold electrode 60 are respectively by heavy
Long-pending mode is arranged at described thin layer both sides, and described aluminum electrode 20 is arranged in described substrate 10, wherein, and described thin layer bag
Including boracic monocrystal silicon 30, phosphorus source 40 and chromium thin film 50, on described chromium thin film 50, deposition has described gold electrode 60, described boracic list
The back side of crystal silicon 30 is provided with described aluminum electrode 20.Thus by improving the adaptability of fexible film, obtain so that thin film is applied to
Different substrate 10 materials, in order to realize economical, quickly, can the flexible thin-film solar cell 1 of large-area manufacturing.
Wherein, the thickness of described aluminum electrode 20 is 50～80nm.
Wherein, the thickness of described chromium thin film 50 is 10～20nm.
Wherein, the thickness of described gold electrode 60 thin film of formation is 60～90nm.
Wherein, described boracic monocrystal silicon 30 is boron doped single crystal silicon thin film (SOI), and phosphorus source 40 is P452.
A kind of preparation method of flexible unitary silicon film solar batteries 1, including step:
S100 boracic monocrystal silicon 30 (SOI) is placed in the mixed solution being made up of perchloric acid and hydrogen peroxide immersion 10～
30 minutes, for the organic impurities on described boracic monocrystal silicon 30 surface of removing, rinse with water again after taking-up and dry, wherein, mixed
The temperature closing solution is 50～80 DEG C；
Phosphorus source 40 is spun on boracic monocrystal silicon 30 surface by S200, then is positioned at 100～150 DEG C heating 10～20 points
Clock, is subsequently placed in the diffusion furnace of 800～1000 DEG C diffusion 2～5 minutes；
S300 makes sorting hole template by litho machine in surface of semi-finished, then by deep reactive ion etch (DRIE) skill
Art corrosion surface monocrystal silicon is until exposing silicon dioxide intermediate layer；
S400 semi-finished product are soaked in concentration be 10～20% hydrofluoric acid solution in 12～24 hours；
S500 passes through the electro beam physics vapour deposition system (EB-PVD) boracic monocrystal silicon 30 backside deposition at semi-finished product
Aluminum nano thin-film, forms aluminum electrode 20, then anneals in a nitrogen environment, and annealing temperature is 350～400 DEG C, annealing time
It it is 15～30 minutes；
S600 prepares the template of top electrode by litho machine in surface of semi-finished, then passes through electro beam physics vapour deposition
System is deposition chromium thin film 50 in end face template, then deposits gold nanometer film on the surface of chromium thin film 50, subsequently at nitrogen environment
Under anneal, annealing temperature is 300～350 DEG C, and annealing time is 5～10 minutes；And
The solaode 1 with end face gold electrode 60 and back aluminium electrode 20 made is transferred to substrate 10 by S700
On, described aluminum electrode 20 is arranged in substrate 10, prepares described flexible unitary silicon film solar batteries 1.
Wherein, described substrate 10 is selected from glass, metallic film, polyethylene terephthalate (PET), polydimethylsiloxanes
One in alkane (PDMS) and flexible stainless steel film.
The present invention is on the basis of existing monocrystaline silicon solar cell 1 production Technology, and combination interface supporting film turns
Shifting technology prepares described flexible unitary silicon film solar batteries 1, extends its scope of application, reduces production cost.
By interface supporting film transfer techniques, shifted the thin film of nanometer or micron dimension in large area, at thin film
On thin film, first prepare the electrode of device before transfer, and utilize this electrode as the skeleton of thin film, be effectively increased big face
The success rate of long-pending nano thin-film transfer.It is advantageous that the size not only increasing transfer thin film, backing material is not had simultaneously
Particular/special requirement, can be hard material (such as glass, metallic film etc.), it is also possible to be flexible backing material (as PET, PDMS,
Flexible stainless steel film etc.).
Phosphorus source 40P452 is a kind of liquid state diffusion phosphorus source 40 material, is applied in silicon materials by the way of rotary coating
Surface, it is possible to achieve impurity enters the accurate control of silicon materials, the preparation for semiconductor junction provides impurity source.
Described gold electrode 60 plays the effect of protecting film layer so that described thin layer is not easily broken, the success rate of separation
Improve, be improved so that described thin layer translates into power.Meanwhile, described chromium thin film 50 is conducive to raising gold nano thin
Film and the bonding force of described thin layer, so that solaode 1 structure prepared is more stable.
The technology of the substep annealing that the present invention uses solves the problem of nano material fusing point step-down, improves gold electrode 60
Stability so that positive and negative electrode is the most complete, improve the overall product of flexible unitary silicon film solar batteries 1
Matter.
The electricity conversion of the described flexible unitary silicon film solar batteries 1 of the present invention is reached body silicon materials
Degree, and monocrystal silicon source material can be more saved in its preparation, not only increases performance, also can reduce material consumption so that it is
More competitive.
Boron doped single crystal silicon thin film material used in the following embodiment of the present invention comes from Beijing Century golden light partly leads
Body company limited.
Perchloric acid used in the following embodiment of the present invention, hydrogen peroxide, Fluohydric acid. are from traditional Chinese medicines group chemical reagent
Company limited.
Phosphorus source 40P452 used in the following embodiment of the present invention comes from FILMTRONICS company of the U.S..
Litho machine used in the following embodiment of the present invention is OAI Mode1806 manual Front/Backside
Contact Mask Aligner。
EB-PVD used in the following embodiment of the present invention is AJA ATC ORION Series Evaporation
System。
Plasma etching machine (DRIE) used in the following embodiment of the present invention is TRION Deep Reactive
Ion Etching System。
Annealing furnace used in the following embodiment of the present invention is MTI OTF Tube Furnace.
Embodiment 1
(1) boron doped single crystal silicon thin film material (SOI) is placed in by 80 mass parts perchloric acid and 60 mass parts hydrogen peroxide
Soaking 10 minutes in the mixed solution mixed, the temperature of mixed solution is 80 DEG C, after taking-up deionized water is rinsed well
Dry.
(2) phosphorus source 40P452 is spun on uniformly SOI surface, first places it in and heat 20 minutes at 100 DEG C, then will
It is placed in the diffusion furnace of 800 DEG C diffusion 5 minutes, obtains semi-finished product 1.
(3) make sorting hole template by litho machine on semi-finished product 1 surface, then utilize DRIE corrosion surface monocrystal silicon straight
To exposing silicon dioxide intermediate layer, obtain semi-finished product 2.
(4) semi-finished product 2 are immersed in the hydrofluoric acid solution that mass concentration is 10% 24 hours, obtain semi-finished product 3.
(5) prepare, in the bottom surface of semi-finished product 3, the nano thin-film aluminum electrode 20 that thickness is 50nm by EB-PVD system, then
Annealing in a nitrogen environment, annealing temperature is 400 DEG C, and annealing time is minutes 15 minutes, obtains semi-finished product 4.
(6) prepared the template of top electrode by litho machine on semi-finished product 4 surface, re-use EB-PVD system at semi-finished product
The chromium nano thin-film of 4 surface deposition 20nm, the most again at the gold nanometer film of its surface deposition 60nm, the most in a nitrogen environment
Annealing, annealing temperature is 350 DEG C, and annealing time is minutes 5 minutes.
(7) solaode 1 with end face gold electrode 60 and back aluminium electrode 20 made is transferred to PET base
On 10, i.e. obtain a kind of flexible unitary silicon film solar batteries 1.
Embodiment 2
(1) boron doped single crystal silicon thin film material (SOI) is placed in by 100 mass parts perchloric acid and 40 mass parts hydrogen peroxide
Soaking 30 minutes in the mixed solution mixed, the temperature of mixed solution is 50 DEG C, after taking-up deionized water is rinsed well
Dry.
(2) phosphorus source 40P452 is spun on uniformly SOI surface, first places it in and heat 10 minutes at 150 DEG C, then will
It is placed in the diffusion furnace of 1000 DEG C diffusion 2 minutes, obtains semi-finished product 1.
(3) make sorting hole template by litho machine on semi-finished product 1 surface, then utilize DRIE corrosion surface monocrystal silicon straight
To exposing silicon dioxide intermediate layer, obtain semi-finished product 2.
(4) semi-finished product 2 are immersed in the hydrofluoric acid solution that mass concentration is 20% 12 hours, obtain semi-finished product 3.
(5) prepare, in the bottom surface of semi-finished product 3, the nano thin-film aluminum electrode 20 that thickness is 80nm by EB-PVD system, then
Annealing in a nitrogen environment, annealing temperature is 350 DEG C, and annealing time is minutes 30 minutes, obtains semi-finished product 4.
(6) prepared the template of top electrode by litho machine on semi-finished product 4 surface, re-use EB-PVD system at semi-finished product
The chromium nano thin-film of 4 surface deposition 10nm, the most again at the gold nanometer film of its surface deposition 90nm, the most in a nitrogen environment
Annealing, annealing temperature is 300 DEG C, and annealing time is minutes 10 minutes.
(7) solaode 1 with end face gold electrode 60 and back aluminium electrode 20 made is transferred to flexibility not
On rust steel, i.e. obtain a kind of flexible unitary silicon film solar batteries 1.
Embodiment 3
(1) boron doped single crystal silicon thin film material (SOI) is placed in by 90 mass parts perchloric acid and 50 mass parts hydrogen peroxide
Soaking 20 minutes in the mixed solution mixed, the temperature of mixed solution is 70 DEG C, after taking-up deionized water is rinsed well
Dry.
(2) phosphorus source 40P452 is spun on uniformly SOI surface, first places it in and heat 15 minutes at 120 DEG C, then will
It is placed in the diffusion furnace of 900 DEG C diffusion 3 minutes, obtains semi-finished product 1.
(3) make sorting hole template by litho machine on semi-finished product 1 surface, then utilize DRIE corrosion surface monocrystal silicon straight
To exposing silicon dioxide intermediate layer, obtain semi-finished product 2.
(4) semi-finished product 2 are immersed in the hydrofluoric acid solution that mass concentration is 15% 18 hours, obtain semi-finished product 3.
(5) prepare, in the bottom surface of semi-finished product 3, the nano thin-film aluminum electrode 20 that thickness is 70nm by EB-PVD system, then
Annealing in a nitrogen environment, annealing temperature is 380 DEG C, and annealing time is minutes 20 minutes, obtains semi-finished product 4.
(6) prepared the template of top electrode by litho machine on semi-finished product 4 surface, re-use EB-PVD system at semi-finished product
The chromium nano thin-film of 4 surface deposition 15nm, the most again at the gold nanometer film of its surface deposition 80nm, the most in a nitrogen environment
Annealing, annealing temperature is 320 DEG C, and annealing time is minutes 7 minutes.
(7) solaode 1 with end face gold electrode 60 and back aluminium electrode 20 made is transferred to other soft
Property PDMS material on, i.e. obtain a kind of flexible unitary silicon film solar batteries 1.
Wherein, the performance test results such as Fig. 2 institute of the described flexible unitary silicon film solar batteries 1 of embodiment 3 preparation
Show.Described in dark current test specification, the leakage current of thin-film solar cells 1 is minimum, and the quality of PN junction is good.
The ultimate principle of the present invention, principal character and advantages of the present invention have more than been shown and described.The technology of the industry
The personnel simply present invention it should be appreciated that the present invention is not restricted to the described embodiments, described in above-described embodiment and description
Principle, the present invention also has various changes and modifications without departing from the spirit and scope of the present invention, these change and
Improvement both falls within the range of claimed invention.The protection domain of application claims by appending claims and
Equivalent defines.
Claims (8)
1. flexible unitary silicon film solar batteries and preparation method thereof, it is characterised in that the group of described solaode
Becoming structure to be followed successively by substrate, aluminum electrode, thin layer and gold electrode, described aluminum electrode and described gold electrode are respectively by deposition
Mode is arranged at described thin layer both sides, and described aluminum electrode is arranged in described substrate, and wherein, described thin layer includes boracic list
Crystal silicon, phosphorus source and chromium thin film, on described chromium thin film, deposition has described gold electrode, and the back side of described boracic monocrystal silicon has been arranged
State aluminum electrode.
Solaode the most according to claim 1, it is characterised in that the thickness of described aluminum electrode is 50～80nm.
Solaode the most according to claim 2, it is characterised in that the thickness of described chromium thin film is 10～20nm.
Solaode the most according to claim 3, it is characterised in that the thickness of the described au electrode thin membrane of formation is 60
～90nm.
Solaode the most according to claim 4, it is characterised in that described boracic monocrystal silicon is that boron doped single crystal silicon is thin
Film.
6. according to described solaode arbitrary in claim 1 to 5, it is characterised in that phosphorus source is P452.
7. a preparation method for the flexible unitary silicon film solar batteries as described in arbitrary in claim 1 to 6, its feature
It is, including step:
S100 boracic monocrystal silicon is placed in the mixed solution being made up of perchloric acid and hydrogen peroxide immersion 10～30 minutes, with
In the organic impurities of the described boracic monocrystalline silicon surface of removing, rinsing with water again and dry after taking-up, wherein, the temperature of mixed solution is
50～80 DEG C；
Phosphorus source is spun on boracic monocrystalline silicon surface by S200, then is positioned at 100～150 DEG C heating 10～20 minutes, puts subsequently
It is placed in the diffusion furnace of 800～1000 DEG C diffusion 2～5 minutes；
S300 makes sorting hole template by litho machine in surface of semi-finished, then by deep reactive ion etch technology corrosion surface
Monocrystal silicon is until exposing silicon dioxide intermediate layer；
S400 semi-finished product are soaked in concentration be 10～20% hydrofluoric acid solution in 12～24 hours；
S500, is formed at the boracic monocrystal silicon backside deposition aluminum nano thin-film of semi-finished product by electro beam physics vapour deposition system
Aluminum electrode, then anneal in a nitrogen environment, annealing temperature is 350～400 DEG C, and annealing time is 15～30 minutes；
S600 prepares the template of top electrode by litho machine in surface of semi-finished, then by electro beam physics vapour deposition system
Deposition chromium thin film in end face template, then gold nanometer film is deposited on the surface of chromium thin film, move back the most in a nitrogen environment
Fire, annealing temperature is 300～350 DEG C, and annealing time is 5～10 minutes；And
The solaode with end face gold electrode and back aluminium electrode made is transferred in substrate by S700, described aluminum electricity
Pole is arranged in substrate, prepares described flexible unitary silicon film solar batteries.
The preparation method of solaode the most according to claim 7, it is characterised in that described substrate is selected from glass, gold
Belong to the one in thin film, polyethylene terephthalate, polydimethylsiloxane and flexible stainless steel film.
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| US20160101988A1 (en) * | 2010-04-02 | 2016-04-14 | The Regents Of The University Of California | METHOD TO SYNTHESIZE COLLOIDAL IRON PYRITE (FeS2) NANOCRYSTALS AND FABRICATE IRON PYRITE THIN FILM SOLAR CELLS |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20160101988A1 (en) * | 2010-04-02 | 2016-04-14 | The Regents Of The University Of California | METHOD TO SYNTHESIZE COLLOIDAL IRON PYRITE (FeS2) NANOCRYSTALS AND FABRICATE IRON PYRITE THIN FILM SOLAR CELLS |
Non-Patent Citations (1)
| Title |
|---|
| 李睿: "单晶硅薄膜的制备及在太阳能电池、SERS中的应用", 《中国优秀博士学位论文全文数据库，工程科技Ⅱ辑》 * |
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