CN106298755A - 一种分立式盖板倒装led白光发光装置 - Google Patents
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Abstract
本发明公开了一种分立式盖板倒装LED白光发光装置。该装置,由基板、导电线路层、围坝胶和若干个间隔分布的芯片单元组成;每个芯片单元由下至上依次由焊接层、倒装LED芯片、粘结胶层和盖板层组成;所述导电线路层位于所述基板上;所述围坝胶位于所述导电线路层上,包围所有芯片单元,且与所述芯片单元之间留有空隙。本发明提供的分立式盖板LED白光发光装置,通过倒装LED芯片与基板上的焊盘结合,在倒装LED芯片上固上分立式盖板,免去了荧光粉和硅胶,从而提高了LED的发光效率也能减少LED芯片的衰减增加LED使用寿命。
Description
技术领域
本发明属于LED领域,涉及一种分立式盖板倒装LED白光发光装置。
背景技术
目前传统LED封装结构中(如图1所示)采用荧光胶直接覆盖在LED芯片表面,LED芯片长期工作产生的高温会导致荧光胶内的荧光粉寿命大大衰减甚至失效,这是LED光源亮度衰减和颜色漂移的主要原因之一。同时,由于荧光粉混合硅胶,硅胶直接覆盖晶片发光面,LED芯片长期工作产生的高温会导致硅胶透过率降低影响出光。同时,也进一步影响了LED芯片的使用寿命。
因此,如何提高LED的发光效率,并减少LED芯片的衰减,增加LED使用寿命是本领域技术人员需解决的问题。
发明内容
本发明的目的是提供一种分立式盖板倒装LED白光发光装置。
本发明提供的分立式盖板倒装LED装置,由基板、导电线路层、围坝胶和若干个间隔分布的芯片单元组成;
每个芯片单元由下至上依次由焊接层、倒装芯片、粘结胶层和盖板层组成;
所述导电线路层位于所述基板上;
所述围坝胶位于所述导电线路层上,包围所有芯片单元,且与所述芯片单元之间留有空隙。
上述装置中,所述基板具体可为LED基板;
所述倒装芯片为倒装LED芯片。
所述LED基板更具体可为氧化铝基板、氮化铝基板、铝基板、铜基板或玻璃基板。
所述焊接层的作用是将所述倒装芯片焊接固定在基板上的导电线路层上。
所述导电线路层为厚膜电路或薄膜电路。
构成所述粘结胶层的材料为硅胶、环氧树脂或硅树脂;
所述盖板层为荧光玻璃片或透明荧光陶瓷片;各种荧光玻璃片或透明荧光陶瓷片均适用;如,构成所述透明荧光陶瓷片的材料可为Y3Al5O12:Ce3+;可按照如下方法制得:由AL2O3、Y2O3和CeO2按照配比称量后,再加入烧结助剂CaO混合后先于150℃真空烧结(真空度为10-1-10-4Pa)15小时后,再于1700℃压力为150MPa的条件下等热静压烧结3小时,于120℃保温30小时,然后随炉冷却而得。
所述盖板层的厚度为0.1-0.5mm,具体可为0.25mm;
构成所述围坝胶的材料为白色RTV硅胶、乳白色硅胶或透明硅胶。
本发明提供的制备所述分立式盖板倒装LED装置的方法,包括如下步骤:
1)在所述基板上由下至上依次设置所述导电线路层;
2)在所述导电线路层上设置若干个间隔分布的焊盘,所述焊盘的位置与所述芯片单元的位置相对应;
3)将焊接剂涂布在所述焊盘上,再将每个所述倒装芯片分布倒装在相对应的焊盘上,进行焊接,得到所述焊接层;
再在所述倒装芯片上由下至上依次制备粘结胶层和盖板层,烘烤固定所述盖板层后,得到所述分立式盖板倒装LED装置中的一个芯片单元;
3)重复所述步骤2)和3),得到若干个芯片单元;
4)在所有芯片单元的四周画上围坝胶烘烤,使所述围坝胶包围所有芯片单元,并与所述芯片单元之间留有空隙,得到所述分立式盖板倒装LED装置。
上述方法中,焊接的方法为电镀法、沉金法、喷锡法或丝印法。
另外,上述本发明提供的分立式盖板倒装LED装置在LED发光中的应用及含有上述分立式盖板倒装LED装置的LED装置,也属于本发明的保护范围。
本发明提供的分立式盖板LED白光发光装置,通过倒装LED芯片与基板上的焊盘结合,在倒装LED芯片上固上分立式盖板,免去了荧光粉和硅胶,从而提高了LED的发光效率也能减少LED芯片的衰减增加LED使用寿命。
附图说明
图1为现有技术中LED光源的结构;其中,1为基板、2为导电线路层、3为围坝胶、4为焊接层、5为倒装芯片、6为荧光粉混合硅胶层;
图2为本发明提供的LED光源结构示意图;其中,1为基板、2为导电线路层、3为围坝胶、4为焊接层、5为倒装芯片、6为粘结胶层、7为盖板层;
图3为本发明提供的分立式透明陶瓷倒装芯片集成LED光源的光谱分布曲线图。
具体实施方式
下面结合具体实施例对本发明作进一步阐述,但本发明并不限于以下实施例。所述方法如无特别说明均为常规方法。所述原材料如无特别说明均能从公开商业途径获得。
下述实施例中,所用透明荧光陶瓷片Y3Al5O12:Ce3+由AL2O3、Y2O3和CeO2按照配比称量后,再加入烧结助剂CaO混合后先于150℃真空烧结(真空度为10-1-10-4Pa)15小时后,再于1700℃压力为150MPa的条件下等热静压烧结3小时,于120℃保温30小时,然后随炉冷却而得。
实施例1、
本发明提供的分立式盖板倒装LED装置,其结构示意图如图2所示。
该分立式盖板倒装LED装置可按照方法制得:
1)在基板上由下至上依次设置厚膜电路作为导电线路层;
2)在导电线路层上设置若干个间隔分布的焊盘,每个焊盘的位置与芯片单元的位置相对应;
3)将焊接剂涂布在焊盘上,再将每个倒装LED芯片通过固晶机分别倒装在相对应的焊盘上,过回流焊进行焊接,将倒装LED芯片固定,得到所述焊接层;
再在所述倒装LED芯片上由下至上依次制备由耐高温硅胶构成的粘结胶层和厚度为0.25mm、由透明荧光陶瓷片Y3Al5O12:Ce3+构成的盖板层,烘烤固定盖板层后,得到分立式盖板倒装LED装置中的一个芯片单元;
3)重复步骤2)和3),得到若干个芯片单元;
4)在所有芯片单元的四周通过划圆点胶机画上一圈围坝胶后通过烤箱烘烤,使围坝胶包围所有芯片单元,并与芯片单元之间留有空隙,得到所述分立式盖板倒装LED装置。
实施例2、实施例1所得分立式集成LED光源的光源光谱测试报告
测试条件:测试方法采用积分球测试;
环境温度:25.3Deg;环境湿度:65%;
测试范围:380nm-780nm;峰值IP:50917(78%);
测量模式:精确测试积分时间:124ms;
所得结果如下。
其中,CIE颜色参数如表1所示;
表1、CIE颜色参数
光参数结果如下:光通量Φ=4174.9lm光效:154.6lm/w辐射通量Φe=111.744w暗视觉:7348.9S/P:1.7603;
电参数结果如下:设定输入电压V=54V,输入电流I=0.5A,测试结果为该LED 光源的功率P=27W;功率因数PF=1.000。
图3为本发明提供的分立式透明陶瓷倒装芯片集成LED光源的光谱分布曲线图。由图可知,所得发射光谱连续性好,显色性较高。
从上述数据可以看出,本发明提供的白光LED光源实现了高光通和高光效,其光效值大于154.6lm/W,光通量大于4174lm。
虽然以上描述了发明的具体实施方式,但是熟悉本技术领域的技术人员应当理解,我们所描述的具体的实施例只是说明性的,而不是用于对本发明的范围的限定,熟悉本领域的技术人员在依照本发明的精神所作的等效的修饰以及变化,都应当涵盖在本发明的权利要求所保护的范围内。
Claims (10)
1.一种分立式盖板倒装LED装置,由基板、导电线路层、围坝胶和若干个间隔分布的芯片单元组成;
每个芯片单元由下至上依次由焊接层、倒装芯片、粘结胶层和盖板层组成;
所述导电线路层位于所述基板上;
所述围坝胶位于所述导电线路层上,包围所有芯片单元,且与所述芯片单元之间留有空隙。
2.根据权利要求1所述的装置,其特征在于:所述基板为LED基板;
所述倒装芯片为倒装LED芯片。
3.根据权利要求2所述的装置,其特征在于:所述LED基板为氧化铝基板、氮化铝基板、铝基板、铜基板或玻璃基板。
4.根据权利要求1-3中任一所述的装置,其特征在于:所述导电线路层为厚膜电路或薄膜电路。
5.根据权利要求1-4中任一所述的装置,其特征在于:构成所述粘结胶层的材料为硅胶、环氧树脂或硅树脂;
所述盖板层为荧光玻璃片或透明荧光陶瓷片;
构成所述围坝胶的材料为白色RTV硅胶、乳白色硅胶或透明硅胶。
6.根据权利要求1-5中任一所述的装置,其特征在于:所述盖板层的厚度为0.1-0.5mm或0.25mm。
7.一种制备权利要求1-6中任一所述分立式盖板倒装LED装置的方法,包括如下步骤:
1)在所述基板上由下至上依次设置所述导电线路层;
2)在所述导电线路层上设置若干个间隔分布的焊盘,所述焊盘的位置与所述芯片单元的位置相对应;
3)将焊接剂涂布在所述焊盘上,再将每个所述倒装芯片分布倒装在相对应的焊盘上,进行焊接,得到所述焊接层;
再在所述倒装芯片上由下至上依次制备粘结胶层和盖板层,烘烤固定所述盖板层后,得到所述分立式盖板倒装LED装置中的一个芯片单元;
3)重复所述步骤2)和3),得到若干个芯片单元;
4)在所有芯片单元的四周画上围坝胶烘烤,使所述围坝胶包围所有芯片单元,并与所述芯片单元之间留有空隙,得到所述分立式盖板倒装LED装置。
8.根据权利要求7所述的方法,其特征在于:所述焊接的方法为电镀法、沉金法、喷锡法或丝印法。
9.权利要求1-6中任一所述分立式盖板倒装LED装置在LED发光中的应用。
10.含有权利要求1-6中任一所述分立式盖板倒装LED装置的LED装置。
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CN108022921A (zh) * | 2017-11-10 | 2018-05-11 | 江苏稳润光电科技有限公司 | 一种汽车前大灯用led光源的制备工艺 |
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