CN106298496A - A kind of improve porous silicon longitudinal direction physical arrangement and the method for optical characteristics uniformity - Google Patents
A kind of improve porous silicon longitudinal direction physical arrangement and the method for optical characteristics uniformity Download PDFInfo
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- CN106298496A CN106298496A CN201610946637.9A CN201610946637A CN106298496A CN 106298496 A CN106298496 A CN 106298496A CN 201610946637 A CN201610946637 A CN 201610946637A CN 106298496 A CN106298496 A CN 106298496A
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- 229910021426 porous silicon Inorganic materials 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000003287 optical effect Effects 0.000 title claims abstract description 16
- 239000007788 liquid Substances 0.000 claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 19
- 230000007797 corrosion Effects 0.000 claims abstract description 18
- 238000005260 corrosion Methods 0.000 claims abstract description 18
- 239000002253 acid Substances 0.000 claims abstract description 8
- 238000002360 preparation method Methods 0.000 claims description 14
- 230000000630 rising effect Effects 0.000 claims description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 20
- 229910052697 platinum Inorganic materials 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 6
- 238000011160 research Methods 0.000 description 6
- 238000000103 photoluminescence spectrum Methods 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000000866 electrolytic etching Methods 0.000 description 4
- 238000006056 electrooxidation reaction Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 241000487918 Acacia argyrodendron Species 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000003556 assay Methods 0.000 description 2
- 235000011222 chang cao shi Nutrition 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229960000935 dehydrated alcohol Drugs 0.000 description 2
- 230000003292 diminished effect Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 230000009897 systematic effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000010181 polygamy Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
The invention discloses and a kind of improve porous silicon longitudinal direction physical arrangement and the method for optical characteristics uniformity.The method is during preparing porous silicon, on the one hand, gradually rise the corrosion temperature of corrosive liquid, and the ability of Fluohydric acid. molecule longitudinally corrosion silicon is increasing, thus causes the vesicularity of porous silicon in a longitudinal direction to increase with corrosion depth and reduce；On the other hand, under the etching condition of normal constant current density, with the increase of corrosion depth, vesicularity becomes greatly or refractive index diminishes.Under certain condition, the two reaches dynamic equilibrium, makes porous silicon film its vesicularity along the longitudinal direction keep consistent, enhances the uniformity of longitudinal physical arrangement of porous silicon film inner surface, it is ensured that porous silicon film longitudinal direction physical arrangement and the uniformity of optical characteristics.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to one and improve porous silicon longitudinal direction physical arrangement and optical characteristics
The method of uniformity.
Background technology
Nineteen ninety, Canham finds that porous silicon at room temperature sends visible ray, and this research being found to be porous silicon is opened up
Light-emitting porous silicon conceptual phase under new era, i.e. room temperature；Porous silicon Luminous display at room temperature silicon is at optoelectronics, light
Learn the application prospect that the aspect such as device and Display Technique is wide.1996, based on porous silicon, the light of material was electrically integrated electricity
The realization on road makes this prospect more attractive, but owing to its luminescent properties is never effectively improved, porous silicon
Luminescence and the research of device and application never make great progress, and seldom have the document micro structure to porous silicon to its light
The impact learning characteristic carries out systematic study.
Now, one of the bottleneck problem being badly in need of solving be the physics micro structure of nanoporous silicon thin film, optical characteristics equal
Even property and interface flatness.Porous silicon film (especially thick film microporous silicon) physics micro structure inhomogeneities and optical characteristics are unstable
Fixed, limit it and extensively apply, meanwhile, existing research work is essentially all and at room temperature completes, and preparation temperature is to many
The impact of hole silicon microstructure and the characteristics of luminescence is studied the most fewer so far.Ono et al etc. have studied preparation temperature to many earliest
The impact of hole silicon photoluminescence spectrum, they report the experimental result reducing photoluminescence intensity reduction with preparation temperature；And
Setzu et al then reports the experimental result that photoluminescence intensity strengthens with the reduction of preparation temperature；Later,
Blackwood et al finds that the relation between intensity and the preparation temperature of photoluminescence spectrum has randomness.It addition, with preparation
The reduction of temperature, Ono et al observes peak value red shift, and Blackwood et al observes peak value blue shift.More than although
Research work does not provide consistent regularity, but these test result indicate that the photoluminescence spectrum of porous silicon has with preparation temperature
Strong dependency.2002, Reece et al et al., when the temperature of corrosive liquid maintains-22.5 DEG C degrees Celsius, made
For high-quality Porous Silicon Microcavity, when it is operated near infrared region, the optical resonance live width of this microcavity is 0.63nm；And have
Closing the Porous Silicon Microcavity that document is prepared at ambient temperature, its luminous halfwidth is 6 ~ 15nm.-22.5 DEG C of conditions prepare micro-
It is the key factor preparing high-quality porous silicon multilayer film that chamber further illustrates preparation temperature.It is known that determine that there is porous
The quality of the optics such as the microcavity of silicon multi-layer film structure and Bragg mirror is uniformity and the interface of porous silicon film
Planarization, therefore, the relation between systematic study preparation temperature and porous silicon interface planarization is the most necessary.
Summarize as drawn a conclusion from existing document: under the etching condition of constant current density, with the increase of corrosion depth,
Vesicularity becomes greatly or refractive index diminishes, and causes porous silicon physical arrangement along the longitudinal direction and the inhomogeneities of optical characteristics, also leads
The interface performance and the planarization that cause porous silicon multilayer film interface are deteriorated.
Present stage, in order to prepare porous silicon physical arrangement and the porous silicon film of optical characteristics uniformity, typically use
The method etc. of corrosion electric current density of successively decreasing improves porous silicon longitudinal direction physical arrangement uniformity, although these methods improve porous
Silicon longitudinal direction physical arrangement and optical characteristics uniformity, but add the complexity of experimental facilities, remain to be further improved.
Summary of the invention
Use corrosion electric current density method of successively decreasing etc. that porous silicon uniformity is processed the equipment brought again at present to overcome
The deficiency that polygamy, longitudinal physical arrangement uniformity remain to be further improved, it is an object of the invention to provide one and can improve porous
Silicon longitudinal direction physical arrangement and the method for optical characteristics uniformity.
For achieving the above object, the technical solution used in the present invention: one improves porous silicon longitudinal direction physical arrangement and optics
The method of characteristic uniformity, it is characterised in that the method is the temperature gradually rising corrosive liquid during preparing porous silicon.?
Under conditions of other conditions are identical, corrosive liquid temperature is the highest, and the ability of Fluohydric acid. molecule longitudinally corrosion silicon is the biggest, and porous silicon is many
Cell size is the least.During preparing porous silicon, on the one hand, owing to the temperature of corrosive liquid is the highest, Fluohydric acid. molecule longitudinally corrosion silicon
Ability the biggest, the vesicularity of porous silicon is the least, cause with corrosive liquid temperature raise, porous silicon vesicularity has in a longitudinal direction
The trend diminished；On the other hand, under the etching condition of constant current density, with the increase of corrosion depth, vesicularity becomes big or folding
The rate of penetrating diminishes.Two kinds of trend reach dynamic equilibrium, thus cause the vesicularity of porous silicon to keep consistent in a longitudinal direction.
Preferably, in etching time, the temperature increase of above-mentioned corrosive liquid is to increase on the basis of corrosive liquid initial temperature
Add 2-30 DEG C, and at the uniform velocity raise the temperature of corrosive liquid.
Compared with prior art, the beneficial effect that the present invention possesses: by the uniform velocity raising the temperature of corrosive liquid in corrosive liquid
Degree, during preparing porous silicon, on the one hand, owing to corrosive liquid temperature gradually rises, cause Fluohydric acid. molecule in corrosive liquid
Warm-up movement gradually accelerate, the ability of Fluohydric acid. molecule longitudinally corrosion silicon is increasing, causes porous silicon in a longitudinal direction many
Cell size has the trend diminished；On the other hand, due under the etching condition of constant current density, with the increase of corrosion depth, porous
Degree becomes greatly or refractive index diminishes, and under certain condition, the two reaches dynamic equilibrium, thus causes porous silicon vesicularity longitudinal side
Upwards keep consistent.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is further illustrated.The following stated, is only the preferable real of the present invention
Executing example, the present invention not does the restriction of other forms, any those skilled in the art are possibly also with the present invention
Disclosed technology contents is changed to the Equivalent embodiments changed on an equal basis.Therefore every content without departing from the present invention program, depend on
According to the technical spirit of the present invention, following example are done simple modification or equivalent variations, all should fall in protection scope of the present invention
In.
Embodiment one
This of the present invention can improve porous silicon longitudinal direction physical arrangement and the method for optical characteristics uniformity, specifically includes following step
Rapid:
1, circuit is connected: being i.e. placed with corrosive liquid in etching tank, the one end in etching tank is provided with silicon chip, in etching tank
The other end is provided with platinized platinum, silicon chip and platinized platinum and is immersed in corrosive liquid, is externally provided with constant-current source at etching tank；Constant-current source is to pass through
TekVisa AFG3101 AWG (Arbitrary Waveform Generator) produces, and the positive pole of this constant-current source is connected with silicon chip by wire, constant-current source
Negative pole is connected with platinized platinum by wire, and during work, the both positive and negative polarity of current source forms current loop by corrosive liquid.
2, to select type be P100, resistivity is the silicon chip anode as electrochemical corrosion of 0.01 Ω .cm, and thin platinized platinum is made
Negative electrode for electrochemical corrosion；Silicon chip and thin platinized platinum are fully immersed in electrolytic etching liquid and carry out galvano-cautery, and etching time is
4min, electrolytic etching liquid is by Fluohydric acid.: dehydrated alcohol and deionized water are prepared with volume ratio for 1:1:2.At the beginning of corrosive liquid
Temperature is 25 DEG C, in the porous silicon preparation process of 4 minutes, heats corrosive liquid, and its temperature is the most uniformly increased to 28 DEG C, until rotten
Erosion completes.
3, for the convenience studied a question, it is as follows that we have selected two groups of experiments, its experiment parameter and corresponding data:
| Numbering | Corrosion current (mA/cm2) | Etching time (Min) | Vesicularity | Porous silicon thickness (μm) |
| ⑴ | 5 | 4 | 51% | ~1.45 |
| ⑵ | 10 | 4 | 53% | ~2.75 |
4, according to pertinent literature and combine above-mentioned experiment condition, the vesicularity of formed two panels porous silicon film is obtained the most about
Being 51%, 53%, thickness is respectively about 1.45 μm, 2.75 μm；
5, after preparation, use deionized water rinsing, be dried the most in atmosphere；
6, porous silicon sample is analyzed research by reflectance spectrum, photoluminescence spectrum and SEM；
7, finished product it is after the assay was approved.
Embodiment two
This of the present embodiment can improve porous silicon longitudinal direction physical arrangement and the method for optical characteristics uniformity, specifically includes as follows
Step:
1, circuit is connected: being i.e. placed with corrosive liquid in etching tank, the one end in etching tank is provided with silicon chip, in etching tank
The other end is provided with platinized platinum, silicon chip and platinized platinum and is immersed in corrosive liquid, is externally provided with constant-current source at etching tank；Constant-current source is to pass through
TekVisa AFG3101 AWG (Arbitrary Waveform Generator) produces, and the positive pole of this constant-current source is connected with silicon chip by wire, constant-current source
Negative pole is connected with platinized platinum by wire, and during work, the both positive and negative polarity of current source forms current loop by corrosive liquid.
2, to select type be P100, resistivity is the silicon chip anode as electrochemical corrosion of 0.01 Ω .cm, and thin platinized platinum is made
Negative electrode for electrochemical corrosion；Silicon chip and thin platinized platinum are fully immersed in electrolytic etching liquid and carry out galvano-cautery, and etching time is
3min, electrolytic etching liquid is by Fluohydric acid.: dehydrated alcohol and deionized water are prepared with volume ratio for 1:1:2.At the beginning of corrosive liquid
Temperature is 25 DEG C, in the porous silicon preparation process of 3 minutes, heats corrosive liquid, and its temperature is the most uniformly increased to 27 DEG C, until rotten
Erosion completes.
3, for the convenience studied a question, it is as follows that we have selected two groups of experiments, its experiment parameter and corresponding data:
| Numbering | Corrosion current (mA/cm2) | Etching time (Min) | Vesicularity | Porous silicon thickness (μm) |
| ⑴ | 10 | 3 | 51% | ~1.95 |
| ⑵ | 15 | 3 | 54% | ~2.75 |
4, according to pertinent literature and combine above-mentioned experiment condition, obtain formed two panels porous silicon film vesicularity and respectively may be about
51%, 54%, thickness is respectively about 1.95 μm, 2.75 μm；
5, after preparation, use deionized water rinsing, be dried the most in atmosphere；
6, porous silicon sample is analyzed research by reflectance spectrum, photoluminescence spectrum and SEM；
7, finished product it is after the assay was approved.
Claims (2)
1. one kind is improved porous silicon longitudinal direction physical arrangement and the method for optical characteristics uniformity, it is characterised in that in preparation porous
During silicon, by the most uniformly raising the corrosion temperature of corrosive liquid, it is achieved following purpose: on the one hand, at normal constant current
Under the etching condition of density, with the increase of corrosion depth, vesicularity becomes greatly or refractive index diminishes；On the other hand, along with corrosive liquid
Being gradually increased of temperature, the ability of Fluohydric acid. molecule longitudinally corrosion silicon is the biggest, causes the longitudinal porous degree of porous silicon with corrosion liquid temperature
Degree rising and reduce, two kinds of trend reach dynamic equilibrium, thus cause porous silicon vesicularity to keep consistent in a longitudinal direction.
The most according to claim 1 improve porous silicon longitudinal direction physical arrangement and the method for optical characteristics uniformity, its feature
Being, in etching time, the temperature increase of corrosive liquid is to increase 2-30 DEG C on the basis of corrosive liquid initial temperature, and at the uniform velocity
Raise the temperature of corrosive liquid.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109023501A (en) * | 2018-08-16 | 2018-12-18 | 湖南文理学院 | A kind of preparation method of nano-structure porous silicon list concavees lens |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102874746A (en) * | 2012-10-11 | 2013-01-16 | 湖南文理学院 | Method capable of improving uniformity of porous silicon film physical micro-structure and optical characteristics |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102874746A (en) * | 2012-10-11 | 2013-01-16 | 湖南文理学院 | Method capable of improving uniformity of porous silicon film physical micro-structure and optical characteristics |
Non-Patent Citations (3)
| Title |
|---|
| D.J.BLACHWOOD等: ""The effect of etching temperature on the photoluminescence emitted from,and the morphologyof,p-type porous silicon"", 《ELECTROCHIMICA ACTA》 * |
| LONG YONGFU等: ""Temperature:a critical parameter affecting the optical properties of porous silicon"", 《JOURNAL FO SEMICONDUCTORS》 * |
| 陈少强等: ""基于多孔硅衬底的纳米薄膜材料的制备与表征 "", 《万方:硕士学位论文》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109023501A (en) * | 2018-08-16 | 2018-12-18 | 湖南文理学院 | A kind of preparation method of nano-structure porous silicon list concavees lens |
| CN109023501B (en) * | 2018-08-16 | 2020-06-02 | 湖南文理学院 | Preparation method of nano porous silicon single concave lens |
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