CN106298495A - A kind of preparation method of semiconductive thin film - Google Patents
A kind of preparation method of semiconductive thin film Download PDFInfo
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- CN106298495A CN106298495A CN201610948584.4A CN201610948584A CN106298495A CN 106298495 A CN106298495 A CN 106298495A CN 201610948584 A CN201610948584 A CN 201610948584A CN 106298495 A CN106298495 A CN 106298495A
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- Prior art keywords
- thin film
- preparation
- semiconductive thin
- corrosion
- acid
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- 239000010409 thin film Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 230000007797 corrosion Effects 0.000 claims abstract description 34
- 238000005260 corrosion Methods 0.000 claims abstract description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000001039 wet etching Methods 0.000 claims abstract description 10
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 7
- 230000000873 masking effect Effects 0.000 claims abstract description 7
- 238000001259 photo etching Methods 0.000 claims abstract description 7
- 239000000243 solution Substances 0.000 claims description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 239000012670 alkaline solution Substances 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 239000001117 sulphuric acid Substances 0.000 claims description 3
- 235000011149 sulphuric acid Nutrition 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims 1
- 239000002585 base Substances 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 2
- 239000010956 nickel silver Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
The invention discloses the preparation method of a kind of semiconductive thin film, comprise the following steps: S101. provides substrate；S102. in substrate, form thin film；S103. by gluing, the self-defined figure of exposed and developed photoetching on thin film: photoresist forms masking layer, corrosion window is formed in the film portion not having photoresist；S104., under vacuum condition, the thin film in corrosion window is carried out wet etching；S105. remaining photoresist after development is removed.The present invention efficiently solves the problem of gas bubbles left in corrosion process, it is ensured that the uniformity of corrosion, improves the overall yields of product.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, it relates to the preparation method of a kind of semiconductive thin film.
Background technology
In prior art, wet etching is carried out the most at ambient pressure, owing in corrosion process, corrosive solution is anti-with thin film
Should produce bubble, the residual of bubble influences whether subsequent corrosion process, causes the uniformity of corrosion to be affected, therefore, typically
The mode using manual operation shake removes bubble, but due to manually-operated discordance so that difference between product batches
Relatively big, affect the overall yields of product.
Summary of the invention
In order to overcome the deficiencies in the prior art, it is an object of the invention to provide the preparation method of a kind of semiconductive thin film,
Efficiently solve the problem of gas bubbles left in corrosion process, it is ensured that the uniformity of corrosion, improve the overall yields of product.
For solving the problems referred to above, the technical solution adopted in the present invention is as follows:
The preparation method of a kind of semiconductive thin film, comprises the following steps:
S101., substrate is provided；
S102. in substrate, form thin film；
S103. by gluing, the self-defined figure of exposed and developed photoetching on thin film: photoresist forms masking layer, is not having
The film portion having photoresist forms corrosion window；
S104., under vacuum condition, the thin film in corrosion window is carried out wet etching；
S105. remaining photoresist after development is removed.
Preferably, in described step S101, described substrate is Silicon Wafer.
Preferably, in described step S102, described thin film passes through plasma enhanced chemical vapor deposition method, low pressure chemical
Vapour deposition process or Film forming method obtain.
Preferably, in described step S104, the corrosive solution used in wet etching is alkaline solution or acid solution.
Preferably, in described step S104, described alkaline solution is sodium hydroxide or potassium hydroxide solution.
Preferably, in described step S104, described acid solution is a kind of in nitric acid, hydrochloric acid, Fluohydric acid., sulphuric acid, acetic acid
Or it is several.
Preferably, in described step S104, corrosion temperature is 25 DEG C-80 DEG C, and etching time is 5-60min.
Compared to existing technology, the beneficial effects of the present invention is:
1, using vacuum environment in the present invention, the harmful substance of corrosive liquid volatilization can directly be pumped, will not to people and
Equipment works the mischief；2, in the present invention, vacuum environment can take away the bubble produced because of corrosion faster so that corrosion uniform
Property is more preferable；3, in the present invention, preparation method reduces the product corrosion difference that production process causes because of people's difference in operation, reduces and criticizes
Difference between secondary, improves product entirety yields.
Accompanying drawing explanation
Fig. 1 is the flow chart of the preparation method of semiconductive thin film in the present invention.
Detailed description of the invention
With detailed description of the invention, the present invention is described in further detail below in conjunction with the accompanying drawings.
See Fig. 1, the invention provides the preparation method of a kind of semiconductive thin film, comprise the following steps:
S101., substrate is provided；
S102. in substrate, form thin film；
S103. by gluing, the self-defined figure of exposed and developed photoetching on thin film: photoresist forms masking layer, is not having
The film portion having photoresist forms corrosion window；
S104., under vacuum condition, the thin film in corrosion window is carried out wet etching；
S105. remaining photoresist after development is removed.
Preferably, in described step S101, described substrate is Silicon Wafer.In described step S101, described thin film passes through
Gas ions strengthens chemical vapour deposition technique, Low Pressure Chemical Vapor Deposition or Film forming method and obtains.In described step S104, wet
The corrosive solution used in method corrosion is alkaline solution or acid solution；Described alkaline solution is sodium hydroxide or potassium hydroxide
Solution；In described step S104, described acid solution is one or more in nitric acid, hydrochloric acid, Fluohydric acid., sulphuric acid, acetic acid；Corrosion
Temperature is 25 DEG C-80 DEG C, and etching time is 5-60min.
Embodiment 1
With reference to flow process in Fig. 1, prepare semiconductive thin film
S101. providing Silicon Wafer substrate, Silicon Wafer substrate is scrubbed before using to be dried；
S102. Film forming method sputtering is used to form the aluminum film that thickness is 2000nm in Silicon Wafer substrate；
S103. by gluing, the self-defined figure of exposed and developed photoetching on aluminum film: photoresist forms masking layer, is not having
The film portion having photoresist forms corrosion window；
S104. under vacuum condition, the thin film in corrosion window is carried out wet etching, use phosphoric acid, nitric acid and acetic acid
Mixed liquor corrodes, and corrosion temperature is 60 DEG C, and etching time is 30min；
S105. remaining photoresist after developing is removed with O plasma.
Embodiment 2
With reference to flow process in Fig. 1, prepare semiconductive thin film
S101. providing Silicon Wafer substrate, Silicon Wafer substrate is scrubbed before using to be dried；
S102. Film forming method is used to sequentially form the titanium that thickness is 200nm in Silicon Wafer substrate, the nickel of 200nm,
The silver of 3000nm, forms titanium/nickel silver thin film；
S103. by gluing, the self-defined figure of exposed and developed photoetching on aluminum film: photoresist forms masking layer, is not having
The film portion having photoresist forms corrosion window；
S104. under vacuum condition, the titanium in corrosion window/nickel silver thin film is carried out wet etching, use spirit of vinegar, dilute
The mixed liquor of nitric acid and diluted hydrofluoric acid corrodes, and corrosion temperature is 23 DEG C, and etching time is 8min；
S105. remaining photoresist after developing is removed with organic stripper.
Embodiment 3
With reference to flow process in Fig. 1, prepare semiconductive thin film
S101. providing Silicon Wafer substrate, Silicon Wafer substrate is scrubbed before using to be dried；
S102. Low Pressure Chemical Vapor Deposition is used to form the silicon oxide that thickness is 1500nm in Silicon Wafer substrate thin
Film；
S103. by gluing, the self-defined figure of exposed and developed photoetching on aluminum film: photoresist forms masking layer, is not having
The film portion having photoresist forms corrosion window；
S104. under vacuum condition, the silicon oxide film in corrosion window is carried out wet etching, use sodium hydroxide solution
Corroding, corrosion temperature is 25 DEG C, and etching time is 5min；
S105. remaining photoresist after developing is removed with organic stripper.
The present invention use vacuum environment, the harmful substance of corrosive liquid volatilization can directly be pumped, will not be to people and setting
For working the mischief, and vacuum environment can take away the bubble produced because of corrosion faster so that the uniformity of corrosion is more preferable.To reality
Executing the semiconductive thin film obtained in example 1-3 and carry out detection discovery, uniformity of its corrosion is much better than existing method, is further ensured that
The yields of product.
It will be apparent to those skilled in the art that can technical scheme as described above and design, make other various
Corresponding change and deformation, and all these change and deformation all should belong to the protection domain of the claims in the present invention
Within.
Claims (7)
1. a preparation method for semiconductive thin film, comprises the following steps:
S101., substrate is provided；
S102. in substrate, form thin film；
S103. by gluing, the self-defined figure of exposed and developed photoetching on thin film: photoresist forms masking layer, is not having light
The film portion of photoresist forms corrosion window；
S104., under vacuum condition, the thin film in corrosion window is carried out wet etching；
S105. remaining photoresist after development is removed.
2. the preparation method of semiconductive thin film as claimed in claim 1, it is characterised in that in described step S101, described base
The end is Silicon Wafer.
3. the preparation method of semiconductive thin film as claimed in claim 1, it is characterised in that in described step S102, described thin
Film is obtained by plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition or Film forming method.
4. the preparation method of the semiconductive thin film as described in any one of claim 1-3, it is characterised in that described step S104
In, the corrosive solution used in wet etching is alkaline solution or acid solution.
5. the preparation method of semiconductive thin film as claimed in claim 4, it is characterised in that in described step S104, described alkali
Property solution is sodium hydroxide or potassium hydroxide solution.
6. the preparation method of semiconductive thin film as claimed in claim 4, it is characterised in that in described step S104, described acid
Property solution is one or more in nitric acid, hydrochloric acid, Fluohydric acid., sulphuric acid, acetic acid.
7. the preparation method of semiconductive thin film as claimed in claim 4, in described step S104, corrosion temperature is 25 DEG C-80
DEG C, etching time is 5-60min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610948584.4A CN106298495A (en) | 2016-11-02 | 2016-11-02 | A kind of preparation method of semiconductive thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610948584.4A CN106298495A (en) | 2016-11-02 | 2016-11-02 | A kind of preparation method of semiconductive thin film |
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| Publication Number | Publication Date |
|---|---|
| CN106298495A true CN106298495A (en) | 2017-01-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610948584.4A Pending CN106298495A (en) | 2016-11-02 | 2016-11-02 | A kind of preparation method of semiconductive thin film |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108927948A (en) * | 2018-07-10 | 2018-12-04 | 长虹美菱股份有限公司 | A kind of moulding process of refrigerator panel and handle with flexible glue injection molding leather effect |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2112206U (en) * | 1991-11-26 | 1992-08-05 | 复旦大学 | Monitor controlling vacuum al membran etching apparatus |
| US20040058558A1 (en) * | 2002-07-11 | 2004-03-25 | Hitomi Sakurai | Manufacturing method for a semiconductor device |
| CN102456732A (en) * | 2010-10-19 | 2012-05-16 | 格科微电子（上海）有限公司 | MOS (Metal Oxide Semiconductor) transistor and manufacturing method thereof as well as CMOS (Complementary Metal Oxide Semiconductor) image sensor |
| CN105990222A (en) * | 2015-02-04 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of semiconductor device, semiconductor device and electronic device |
| CN106033717A (en) * | 2015-03-11 | 2016-10-19 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of semiconductor device, semiconductor device, and electronic device |
-
2016
- 2016-11-02 CN CN201610948584.4A patent/CN106298495A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2112206U (en) * | 1991-11-26 | 1992-08-05 | 复旦大学 | Monitor controlling vacuum al membran etching apparatus |
| US20040058558A1 (en) * | 2002-07-11 | 2004-03-25 | Hitomi Sakurai | Manufacturing method for a semiconductor device |
| CN102456732A (en) * | 2010-10-19 | 2012-05-16 | 格科微电子（上海）有限公司 | MOS (Metal Oxide Semiconductor) transistor and manufacturing method thereof as well as CMOS (Complementary Metal Oxide Semiconductor) image sensor |
| CN105990222A (en) * | 2015-02-04 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of semiconductor device, semiconductor device and electronic device |
| CN106033717A (en) * | 2015-03-11 | 2016-10-19 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of semiconductor device, semiconductor device, and electronic device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108927948A (en) * | 2018-07-10 | 2018-12-04 | 长虹美菱股份有限公司 | A kind of moulding process of refrigerator panel and handle with flexible glue injection molding leather effect |
| CN108927948B (en) * | 2018-07-10 | 2023-08-25 | 长虹美菱股份有限公司 | Forming process of decorative strip and handle with soft rubber injection leather effect for refrigerator |
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Application publication date: 20170104 |
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