CN106297617A - Test contactor control unit, method, test circuit and display device - Google Patents
Test contactor control unit, method, test circuit and display device Download PDFInfo
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- CN106297617A CN106297617A CN201610960992.1A CN201610960992A CN106297617A CN 106297617 A CN106297617 A CN 106297617A CN 201610960992 A CN201610960992 A CN 201610960992A CN 106297617 A CN106297617 A CN 106297617A
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- switching transistor
- test
- grid line
- data wire
- grid
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
Abstract
The present invention provides a kind of test contactor control unit, method, test circuit and display device, described test contactor control unit includes bias control module, for in non-testing time section, within each bias cycle, control the absolute value of difference between the first back bias voltage time that grid line test switching transistor is in the first positive bias time of positive bias and grid line test switching transistor is in back bias voltage less than the first scheduled time difference, and control the absolute value of difference between the second back bias voltage time that data wire test switching transistor is in the second positive bias time of positive bias and data wire test switching transistor is in back bias voltage less than the second scheduled time difference；Bias cycle duration is less than the predetermined period time.The present invention can improve the characteristic of grid line test switching transistor and the situation of the characteristic cracking of data wire test switching transistor.
Description
Technical field
The present invention relates to Circuit Measurement Technology field, particularly relate to a kind of test contactor control unit, method, test
Circuit and display device.
Background technology
In the test contactor control unit of prior art, grid line test switching transistor and data wire test switch
Transistor is chronically at back bias voltage state in the non-test stage, thus TFT (thin film transistor (TFT)) characteristic occurs significantly deterioration, leads
The leakage current of the leakage current and data wire test switching transistor that cause grid line test switching transistor substantially becomes big, thus can cause
Gate driver circuit is leaked electricity by grid line test switching transistor, and data drive circuit is leaked by data wire test switching transistor
Electricity, thus affect gate driver circuit and the data drive circuit driven when long-time, high temperature.
Summary of the invention
Offer one test contactor control unit, method, test circuit and display are provided
Device, solves grid line test switching transistor and the data wire test switch testing in contactor control unit in prior art
Transistor is chronically at back bias voltage state in the non-test stage, thus TFT (thin film transistor (TFT)) characteristic occurs significantly deterioration, leads
The leakage current of the leakage current and data wire test switching transistor that cause grid line test switching transistor substantially becomes big, thus can cause
Gate driver circuit is leaked electricity by grid line test switching transistor, and data drive circuit is leaked by data wire test switching transistor
Electricity, thus the problem affecting gate driver circuit and the data drive circuit driven when long-time, high temperature.
In order to achieve the above object, the invention provides a kind of test contactor control unit, open including grid line test
Close control module and data wire test switch control module；Described grid line test switch control module is in non-testing time section
Control to disconnect the connection between grid line test signal extraction electrode and the gate drive signal outfan of gate driver circuit, described
Data wire test switch control module is for controlling turn-off data line test signal extraction electrode and data in non-testing time section
Connection between the data voltage signal outfan of drive circuit；Described test contactor control unit also includes bias voltage control
Module；
Described grid line test switch control module includes being connected to described grid line test signal extraction electrode and described grid
2N the grid line test switching transistor being serially connected between the gate drive signal outfan of drive circuit；N is positive integer；
Described data wire test switch control module includes being connected to described data wire test signal extraction electrode and described
2M the data wire test switching transistor being serially connected between the data voltage signal outfan of data drive circuit；M is
Positive integer；
Described bias control module, grid and the test of described data wire with described grid line test switching transistor are opened respectively
The grid closing transistor connects, and in non-testing time section, within each bias cycle, controls described grid line test switch crystalline substance
When body pipe is in the first back bias voltage that the first positive bias time of positive bias is in back bias voltage with this grid line test switching transistor
The absolute value of the difference between be less than the first scheduled time difference, and control described data wire test switching transistor be just in
Between the second back bias voltage time that second positive bias time of bias and this data wire test switching transistor are in back bias voltage
The absolute value of difference is less than the second scheduled time difference；
Described bias cycle duration is less than the predetermined period time.
During enforcement, the described predetermined period time is less than or equal to the display cycle.
During enforcement, described bias control module is specifically for brilliant to each described grid line test switch in non-testing time section
The grid of body pipe sends corresponding grid line testing and control clock signal, to the grid of each described data wire test switching transistor
Send corresponding data wire testing and control clock signal；
Absolute value in described non-testing time section, the dutycycle of described grid line testing and control clock signal and the difference of 1
Less than the first predetermined duty cycle difference；Described data wire test control signal is data wire testing and control clock signal, described number
It is less than the second predetermined duty cycle difference with the absolute value of the difference of 1 according to the dutycycle of line testing and control clock signal.
During enforcement, described first scheduled time difference and described second scheduled time difference are all 0；At non-testing time
Section, the dutycycle of described grid line testing and control clock signal is 1, and the dutycycle of described data wire testing and control clock signal is 1.
During enforcement, described grid line test switch control module includes that the first grid line test switching transistor and the second grid line are surveyed
Examination switching transistor；Described data wire test switch control module includes the first data wire test switching transistor and the second data
Line test switching transistor；
Described first grid line test switching transistor, described second grid line test switching transistor, described first data wire
Test switching transistor is identical with the type of described second data wire test switching transistor；
First pole of described first grid line test switching transistor is connected with described grid line test signal extraction electrode, described
Second pole of the first grid line test switching transistor is connected with the first pole of described second grid line test switching transistor；
First pole of described first data wire test switching transistor is connected with described data wire test signal extraction electrode,
Second pole of described first data wire test switching transistor connects with the first pole of described second data wire test switching transistor
Connect；
Second pole of described second grid line test switching transistor is defeated with the gate drive signal of described gate driver circuit
Go out end to connect, the second pole of described second data wire test switching transistor and the data voltage signal of described data drive circuit
Outfan connects；
Described bias control module is for testing the grid of switching transistor in non-testing time section to described first grid line
The first control clock signal is sent, to described second grid line test switch crystal with described second data wire test switching transistor
Pipe and described first data wire test switching transistor send the second control clock signal；
It is anti-phase that described first control clock signal and described second controls clock signal；
Described first controls the cycle of clock signal less than the display cycle.
During enforcement, test contactor control unit of the present invention also includes:
Grid line testing control module, tests the grid of switching transistor and described second grid line with described first grid line respectively
The grid of test switching transistor connects, for controlling described first grid line test switching transistor in grid line testing time section
Grid and described second grid line test switching transistor grid all access the first level, with control described first grid line test open
Close transistor and described second grid line test switching transistor is all opened；And,
Data wire testing control module, tests the grid and described second of switching transistor with described first data wire respectively
The grid of data wire test switching transistor connects, and opens for controlling described first data wire test in data wire testing time section
Close the grid of transistor, the grid of described second data wire test switching transistor all accesses the first level, to control described the
One grid line test switching transistor, described second grid line test switching transistor, described first data wire test switching transistor
All open with described second data wire test switching transistor.
Present invention also offers a kind of test contactor control method, be applied to above-mentioned test contactor and control single
Unit, described test contactor control method includes:
In non-testing time section, within each bias cycle, bias control module controls each grid line test switch crystal
The absolute value that pipe is in the difference between the first positive bias time of positive bias and the first back bias voltage time being in back bias voltage is little
In the first scheduled time difference, bias control module controls each data wire test switching transistor and is just being in the second of positive bias
The absolute value of the difference between bias time and the second back bias voltage time being in back bias voltage is less than the second scheduled time difference.
Present invention also offers a kind of test circuit, draw including grid line test signal extraction electrode, data wire test signal
Go out electrode and above-mentioned test contactor control unit；
The grid line test switch control module that described test contactor control unit includes tests signal with described grid line
Extraction electrode connects；
The data wire test switch control module that described test contactor control unit includes is tested with described data wire
Signal extraction electrode connects.
Present invention also offers a kind of display device, including above-mentioned test circuit.
During enforcement, display device of the present invention also includes gate driver circuit and data drive circuit；
The bias control module that test contactor control unit in described test circuit includes is arranged at described grid
In drive circuit；
The grid line test switch control module that described gate driver circuit and described test contactor control unit include
Connect；
The data wire test on-off control mould that described data drive circuit and described test contactor control unit include
Block connects.
Compared with prior art, test contactor control unit of the present invention, method, test circuit and display dress
Put, such that it is able to improve the characteristic of grid line test switching transistor and the feelings of the characteristic cracking of data wire test switching transistor
Condition, so that the leakage current of the leakage current of grid line test switching transistor and data wire test switching transistor will not substantially become
Greatly, gate driver circuit can be avoided to pass through grid line test switching transistor electric leakage, it is to avoid data drive circuit passes through data wire
Test switching transistor electric leakage.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of the test contactor control unit described in the embodiment of the present invention；
Fig. 2 is the structure chart of a specific embodiment of test contactor control unit of the present invention；
Fig. 3 is the sequential chart of CLK1 and CLK2 in the specific embodiment of the test contactor control unit shown in Fig. 2；
Fig. 4 is the structure chart of another specific embodiment of test contactor control unit of the present invention；
Fig. 5 is the structure chart of the still another embodiment of test contactor control unit of the present invention；
Fig. 6 is the sequential chart of GS and DS in the specific embodiment of the test contactor control unit shown in Fig. 5.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
As it is shown in figure 1, the test contactor control unit described in the embodiment of the present invention includes that grid line tests on-off control
Module 11 and data wire test switch control module 12；
Described grid line test switch control module 11 is connected to described grid line test signal extraction electrode GTE and described grid
Between the gate drive signal outfan of drive circuit GI, draw for controlling to disconnect grid line test signal in non-testing time section
Connection between the gate drive signal outfan of electrode GTE and gate driver circuit GI；
Described data wire test switch control module 12 is connected to described data wire test signal extraction electrode DTE and data
Between the data voltage signal outfan of drive circuit DI, draw for controlling turn-off data line test signal in non-testing time section
Go out the connection between the data voltage signal outfan of electrode DTE and data drive circuit DI；
Described test contactor control unit also includes bias control module 13；
Described grid line test switch control module 11 includes being connected to described grid line test signal extraction electrode GTE and described
2N grid line test switching transistor (Fig. 1 being serially connected between the gate drive signal outfan of gate driver circuit GI
Not shown in)；N is positive integer；
Described data wire test switch control module includes being connected to described data wire test signal extraction electrode and described
2M data wire test switching transistor (Fig. 1 being serially connected between the data voltage signal outfan of data drive circuit
Not shown in)；M is positive integer；
Described bias control module 13, grid and described data wire with described grid line test switching transistor are tested respectively
The grid of switching transistor connects, and in non-testing time section, within each bias cycle, controls described grid line test switch
Transistor is in the first positive bias time of positive bias and this grid line test switching transistor is in the first back bias voltage of back bias voltage
The absolute value of the difference between the time be less than the first scheduled time difference, and control described data wire test switching transistor be in
Between the second back bias voltage time that second positive bias time of positive bias and this data wire test switching transistor are in back bias voltage
The absolute value of difference less than the second scheduled time difference；
Described bias cycle duration is less than the predetermined period time.
When practical operation, the described predetermined period time can limit according to practical situation, but so that grid line
Test switching transistor and data wire test switching transistor will not be in positive bias or back bias voltage for a long time thus affect crystal
The characteristic of pipe, it is excessive that the described predetermined period time should not be set, and such as, the described predetermined period time can be 16ms, but
It is not limited to this.
Test contactor control unit described in the embodiment of the present invention passes through bias control module 13 at non-testing time
Section, within each bias cycle, controls described grid line test switching transistor and is in the first positive bias time of positive bias and is somebody's turn to do
The absolute value of the difference between the first back bias voltage time that grid line test switching transistor is in back bias voltage is pre-timing less than first
Between difference, and control described data wire test switching transistor and be in the second positive bias time of positive bias and this data wire is tested
The absolute value of the difference between the second back bias voltage time that switching transistor is in back bias voltage is less than the second scheduled time difference, with
Making described grid line test switching transistor and described data wire test switching transistor will not be long lasting for being in positive bias
State, also long lasting for being in back bias voltage state, thus will avoid grid line test switching transistor and data wire test to open
Pass transistor characteristic deterioration.
In order to avoid the grid line in existing test contactor control unit tests switching transistor and data wire test
Switching transistor is chronically at back bias voltage state in the non-test stage, thus TFT characteristic occurs significantly deterioration, causes grid line to be surveyed
The leakage current of examination switching transistor and the leakage current of data wire test switching transistor substantially become big, thus can cause raster data model
Circuit GI is leaked electricity by grid line test switching transistor, and data drive circuit DI is leaked electricity by data wire test switching transistor,
Thus affect the problem of gate driver circuit GI and the data drive circuit DI driven when long-time, high temperature,
The embodiment of the present invention is by using even number grid line test switching transistor and even number data wire test switching transistor, non-
Testing time section, when the test switching transistor conducting of a part of grid line, another part grid line test switching transistor turns off, from
And control to disconnect between grid line test signal extraction electrode GTE and the gate drive signal outfan of described gate driver circuit GI
Connection, and make within each bias cycle, described grid line test switching transistor is in the first positive bias of positive bias
Gap between the first back bias voltage time that time and described grid line test switching transistor are in back bias voltage is little, namely makes
Described grid line test switching transistor will not be chronically at positive bias state, also will not be chronically at back bias voltage state, so that
The leakage current obtaining described grid line test switching transistor will not substantially become big, and gate driver circuit GI can be avoided to be surveyed by grid line
Transistor leakage is closed in runin；In the non-test stage, when the test switching transistor conducting of a part of data wire, another part data
Line test switching transistor turns off, thus controls turn-off data line test signal extraction electrode DTE and described data drive circuit
Connection between the data drive signal outfan of DI, and make within each bias cycle, described data wire test switch
Transistor is in the first positive bias time of positive bias and described data wire test switching transistor is in the first negative of back bias voltage
Gap between the bias time is little, namely makes described data wire test switching transistor will not be chronically at positive bias shape
State, also will not be chronically at back bias voltage state, so that the leakage current of described data wire test switching transistor will not be obvious
Become big, data drive circuit DI can be avoided to be leaked electricity by data wire test switching transistor.
When practical operation, the described predetermined period time can be less than or equal to the display cycle.The described display cycle is aobvious
Show the frame display time of panel, such as, can be 16ms, it is also possible to be adjusted to other times value according to practical situation, at this
The concrete time value of described display cycle is not construed as limiting.
In most preferred cases, described first scheduled time difference and described second scheduled time difference are all 0, also
That is, in non-testing time section, within each bias cycle, each grid line testing and control transistor is in the time of positive bias and is somebody's turn to do
The time that grid line testing and control transistor is in back bias voltage is equal, each data wire testing and control transistor be in positive bias time
Between and this data wire testing and control transistor time of being in back bias voltage the most equal, such that it is able to avoid to the full extent institute
The characteristic of the characteristic and described data wire testing and control transistor of stating grid line testing and control transistor produces impact so that described grid
The leakage current of line testing and control transistor and the leakage current of described data wire testing and control transistor will not increase.
When practical operation, described bias control module can specifically in non-testing time section to each described grid line
The grid of test switching transistor sends corresponding grid line testing and control clock signal, to each described data wire test switch crystalline substance
The grid of body pipe sends corresponding data wire testing and control clock signal；
Absolute value in described non-testing time section, the dutycycle of described grid line testing and control clock signal and the difference of 1
Less than the first predetermined duty cycle difference；Described data wire test control signal is data wire testing and control clock signal, described number
It is less than the second predetermined duty cycle difference with the absolute value of the difference of 1 according to the dutycycle of line testing and control clock signal.
When practical operation, the cycle of described grid line testing and control clock signal can believe with described data wire test clock
Number cycle equal, the described bias cycle i.e. can correspond to the cycle of described grid line testing and control clock signal.
In the specific implementation, in most preferred cases, dutycycle and the data wire of grid line testing and control clock signal is surveyed
The dutycycle of examination control signal is all 1, namely time and described grid line that grid line testing and control clock signal is high level are tested
Controlling clock signal is that the low level time is equal, and data wire testing and control clock signal is the time of high level and described data
Line testing and control clock signal is that the low level time is equal, so that corresponding grid line testing and control transistor is in successively
Positive bias and back bias voltage, and the time being in positive bias is equal with the time being in back bias voltage, and make corresponding data wire
Testing and control transistor is in positive bias and back bias voltage successively, and is in the time of positive bias and is in the time phase of back bias voltage
Deng, so can avoid to the full extent described grid line testing and control transistor and data wire testing and control transistor
The impact of characteristic so that the leakage current of described grid line testing and control transistor and the electric leakage of described data wire testing and control transistor
Stream will not increase.But, when practical operation, due to the control accuracy problem to high level time and low level time, described
The dutycycle of grid line testing and control clock signal and the dutycycle of described data wire testing and control clock signal likely can't
It is arranged to 1 accurately, but dutycycle has certain error, or, in another case, as long as controlling grid line test control
Between dutycycle and 1 of transistor processed, the absolute value of difference is less than the first predetermined duty cycle difference, and controls grid line testing and control
Between dutycycle and 1 of transistor, the absolute value of difference is less than the second predetermined duty cycle difference, such as, described first predetermined duty
Can be 0.05 than difference, described second predetermined duty cycle difference can be 0.1, i.e. controls accounting for of grid line testing and control transistor
Empty ratio between 0.95 to 1.05, the dutycycle of control data wire testing and control transistor between 0.9 to 1.1 so that
Grid line testing and control transistor and data wire testing and control transistor can or can not be in positive bias or back bias voltage, and grid for a long time
Line testing and control transistor and data wire testing and control transistor are in time and this grid line testing and control transistor of positive bias
The lead time being in back bias voltage is not too large, thus ensures the characteristic of described grid line testing and control transistor and described data wire
The characteristic of testing and control transistor will not be a greater impact.
When practical operation, described first predetermined duty cycle difference can also according to circumstances be set to other numerical value, such as,
0.1,0.08 or other values, but the most described first predetermined duty cycle difference should not be arranged to too big, such as should
First predetermined duty cycle difference is preferably below 0.2, so that grid line testing and control transistor is in positive bias and back bias voltage
Lead time less big, from the leakage current without large effect grid line testing and control transistor；
Same, described second predetermined duty cycle difference can also according to circumstances be set to other numerical value, such as, 0.05,
0.08 or other values, but the most described second predetermined duty cycle difference should not be arranged to too big, such as this second
Predetermined duty cycle difference is preferably below 0.2, so that data wire testing and control transistor is in positive bias and back bias voltage
Lead time is less big, from the leakage current without large effect data wire testing and control transistor.
Preferably, in non-testing time section, the dutycycle of described grid line testing and control clock signal is 1, described data wire
The dutycycle of testing and control clock signal is 1.
Concrete, described grid line test switch control module can include the first grid line test switching transistor and second gate
Line test switching transistor；Described data wire test switch control module includes the first data wire test switching transistor and second
Data wire test switching transistor；
Described first grid line test switching transistor, described second grid line test switching transistor, described first data wire
Test switching transistor is identical with the type of described second data wire test switching transistor；
First pole of described first grid line test switching transistor is connected with described grid line test signal extraction electrode, described
Second pole of the first grid line test switching transistor is connected with the first pole of described second grid line test switching transistor；
First pole of described first data wire test switching transistor is connected with described data wire test signal extraction electrode,
Second pole of described first data wire test switching transistor connects with the first pole of described second data wire test switching transistor
Connect；
Second pole of described second grid line test switching transistor is defeated with the gate drive signal of described gate driver circuit
Go out end to connect, the second pole of described second data wire test switching transistor and the data voltage signal of described data drive circuit
Outfan connects；
Described bias control module is for testing the grid of switching transistor in non-testing time section to described first grid line
The first control clock signal is sent, to described second grid line test switch crystal with described second data wire test switching transistor
Pipe and described first data wire test switching transistor send the second control clock signal；
It is anti-phase that described first control clock signal and described second controls clock signal；
Described first controls the cycle of clock signal less than the display cycle.
Concrete, the test contactor control unit described in the embodiment of the present invention also includes:
Grid line testing control module, tests the grid of switching transistor and described second grid line with described first grid line respectively
The grid of test switching transistor connects, for controlling described first grid line test switching transistor in grid line testing time section
Grid and described second grid line test switching transistor grid all access the first level, with control described first grid line test open
Close transistor and described second grid line test switching transistor is all opened；And,
Data wire testing control module, tests the grid and described second of switching transistor with described first data wire respectively
The grid of data wire test switching transistor connects, and opens for controlling described first data wire test in data wire testing time section
Close the grid of transistor, the grid of described second data wire test switching transistor all accesses the first level, to control described the
One grid line test switching transistor, described second grid line test switching transistor, described first data wire test switching transistor
All open with described second data wire test switching transistor.
Test contactor control unit described in the embodiment of the present invention passes through grid line testing control module to survey at grid line
Examination time period control gate drive circuit is connected with grid line test signal extraction electrode, can carry out grid line test；The present invention
Test contactor control unit described in embodiment passes through data wire testing control module with in the section control of data wire testing time
Gate driver circuit processed is connected with data wire test signal extraction electrode, can carry out data wire test.
When practical operation, grid line test and data wire test can be carried out simultaneously, it is also possible to timesharing is carried out, can basis
Practical situation sets.
Below by a specific embodiment, test contactor control unit of the present invention is described.
As in figure 2 it is shown, a specific embodiment of test contactor control unit of the present invention includes that grid line is tested
Switch control module 11, data wire test switch control module 12 and bias control module 13；
Described grid line test switch control module includes the first grid line test switching transistor SWG1 and the test of the second grid line
Switching transistor SWG2；
Described data wire test switch control module includes the first data wire test switching transistor SWD1 and the second data
Line test switching transistor SWD2；
Described bias control module 13 includes that the first control submodule 131 and second controls submodule 132；
The grid of described first grid line test switching transistor SWG1 and described second data wire test switching transistor
The grid of SWD2 all controls submodule 131 with described first and is connected；
The grid of described first data wire test switching transistor SWD1 and described second grid line test switching transistor
The grid of SWG2 all controls submodule 132 with described second and is connected；
Described first grid line test switching transistor SWG1, described second grid line test switching transistor SWG2, described the
One data wire test switching transistor SWD1 and described second data wire test switching transistor SWD2 are all n-type transistor；
The drain electrode of described first grid line test switching transistor SWG1 is with described grid line test signal extraction electrode GTE even
Connecing, the source electrode of described first grid line test switching transistor SWG1 and described second grid line test the drain electrode of switching transistor SWG2
Connect；
The drain electrode of described first data wire test switching transistor SWD1 tests signal extraction electrode DTE with described data wire
Connect, the source electrode of described first data wire test switching transistor SWD1 and described second data wire test switching transistor SWD2
Drain electrode connect；
The source electrode of described second grid line test switching transistor SWD2 and the raster data model letter of described gate driver circuit GI
Number outfan connects, the source electrode of described second data wire test switching transistor SWD2 and the data of described data drive circuit DI
Voltage signal output end connects；
Described first controls submodule 131 for testing switching transistor in non-testing time section to described first grid line
Grid and described second data wire test switching transistor SWD2 of SWG1 send the first control clock signal clk 1；
Described second controls submodule 132 for described second grid line test switching transistor SWG2 and described first number
The second control clock signal clk 2 is sent according to line test switching transistor SWD1.
As it is shown on figure 3, in non-testing time section, described first controls clock signal clk 1 and described second controls clock letter
Number CLK2 is anti-phase；
The cycle that described first cycle controlling clock signal clk 1 and described second controls clock signal clk 2 is equal；
Described first controls the cycle of clock signal clk 1 less than frame display time (such as 16ms).
In figure 3, H indicates high level, and L indicates low level.
Present invention test contactor control unit as shown in Figure 2 operationally, in non-testing time section, when described
When one control clock signal clk 1 is high level, described second control clock signal clk 2 is low level, SWG1 and SWD2 positively biased
Pressure is opened, SWG2 and SWD1 back bias voltage is closed；When described first control clock signal clk 1 is low level, described second controls
Clock signal clk 2 is high level, SWG1 and SWD2 back bias voltage is closed, SWG2 and SWD1 positive bias is opened；In a frame time,
SWG1 replaces positive back bias voltage successively, and SWG2 replaces positive back bias voltage successively, and SWD1 replaces positive back bias voltage successively, and SWD2 is successively the most just
Back bias voltage, prevents because long-time positive bias or back bias voltage cause TFT characteristic to deteriorate.
When practical operation, described bias control module 13 can be arranged in gate driver circuit GI, namely by grid
Drive circuit GI provides the first control clock signal clk 1 and second to control clock signal clk 2.
When practical operation, described first grid line test switching transistor SWG1, described second grid line test switch crystal
Pipe SWG2, described first data wire test switching transistor SWD1, described second data wire test switching transistor SWD2 also may be used
Think p-type transistor, at this, type of above-mentioned switching transistor is not construed as limiting.
The transistor used in all embodiments of the invention can be all thin film transistor (TFT) or field effect transistor or other characteristics
Identical device.In embodiments of the present invention, for distinguishing transistor the two poles of the earth in addition to grid, wherein first will be referred to as in a pole
Pole, another pole is referred to as the second pole；When the first extremely source electrode, second extremely drains；When first extremely drains, the second extremely source
Pole.
As shown in Figure 4, on the basis of the test contactor control unit shown in Fig. 2, described in the embodiment of the present invention
Test contactor control unit also includes the first test switch control module SWT1 and second test switch control module SWT2；
Further, in the diagram, described bias control module (not shown in Fig. 4) is arranged in gate driver circuit GI, by GI
CLK1 and CLK2 is provided；
SWT1 is connected with the grid of SWG2 and the grid of SWD1 respectively；SWT2 respectively with grid and the grid of SWD2 of SWG1
Connect；
When practical operation, in testing time section, SWT1 and SWT2 exports high level signal so that SWG1, SWG2,
SWD1 and SWD2 opens, so that the grid line test signal of gate driver circuit GI output is by SWG1 and SWG2 opened
Access GTE, and the data wire test signal that data drive circuit DI is exported access DTE by SWD1 and SWD2 opened,
To carry out grid line test and data wire being tested.
In the specific implementation, as it is shown in figure 5, the GI in Fig. 4 exports gate drive signal GS to pixel driven transistor PDT
Grid, the source electrode of pixel driven transistor PDT is connected with pixel electrode 302, the drain electrode of pixel driven transistor PDT and data
Drive circuit DI connects, the drain electrode of described data drive circuit DI outputting data signals DS to pixel driven transistor PDT；Fig. 6
Depict the sequential chart of GS and DS.In figure 6, H indicates high level, and L indicates low level.
Test contactor control method described in the embodiment of the present invention, is applied to above-mentioned test contactor and controls single
Unit, described test contactor control method includes:
In non-testing time section, within each bias cycle, bias control module controls each grid line test switch crystal
The absolute value that pipe is in the difference between the first positive bias time of positive bias and the first back bias voltage time being in back bias voltage is little
In the first scheduled time difference, bias control module controls each data wire test switching transistor and is just being in the second of positive bias
The absolute value of the difference between bias time and the second back bias voltage time being in back bias voltage is less than the second scheduled time difference.
Test circuit described in the embodiment of the present invention, draws including grid line test signal extraction electrode, data wire test signal
Go out electrode and above-mentioned test contactor control unit；
The grid line test switch control module that described test contactor control unit includes tests signal with described grid line
Extraction electrode connects；
The data wire test switch control module that described test contactor control unit includes is tested with described data wire
Signal extraction electrode connects.
Display device described in the embodiment of the present invention, including above-mentioned test circuit.
Concrete, the display device described in the embodiment of the present invention also includes gate driver circuit and data drive circuit；
The bias control module that test contactor control unit in described test circuit includes is arranged at described grid
In drive circuit；
The grid line test switch control module that described gate driver circuit and described test contactor control unit include
Connect；
The data wire test on-off control mould that described data drive circuit and described test contactor control unit include
Block connects.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, on the premise of without departing from principle of the present invention, it is also possible to make some improvements and modifications, these improvements and modifications are also
Should be regarded as protection scope of the present invention.
Claims (10)
1. a test contactor control unit, including grid line test switch control module and data wire test on-off control mould
Block；Described grid line test switch control module is for controlling to disconnect grid line test signal extraction electrode and grid in non-testing time section
Connection between the gate drive signal outfan of pole drive circuit, described data wire test switch control module is in non-survey
The examination time period controls between turn-off data line test signal extraction electrode and the data voltage signal outfan of data drive circuit
Connection；It is characterized in that, described test contactor control unit also includes bias control module；
Described grid line test switch control module includes being connected to described grid line test signal extraction electrode and described raster data model
2N the grid line test switching transistor being serially connected between the gate drive signal outfan of circuit；N is positive integer；
Described data wire test switch control module includes being connected to described data wire test signal extraction electrode and described data
2M the data wire test switching transistor being serially connected between the data voltage signal outfan of drive circuit；M is the most whole
Number；
Described bias control module, brilliant with the grid of described grid line test switching transistor and described data wire test switch respectively
The grid of body pipe connects, and in non-testing time section, within each bias cycle, controls described grid line test switching transistor
Be in the first positive bias time of positive bias and this grid line test switching transistor be in back bias voltage the first back bias voltage time it
Between the absolute value of difference less than the first scheduled time difference, and control described data wire test switching transistor and be in positive bias
The second positive bias time and this data wire test switching transistor be in back bias voltage the second back bias voltage time between difference
Absolute value less than the second scheduled time difference；
Described bias cycle duration is less than the predetermined period time.
2. test contactor control unit as claimed in claim 1, it is characterised in that the described predetermined period time less than or
Equal to the display cycle.
3. test contactor control unit as claimed in claim 2, it is characterised in that described bias control module is specifically used
In sending corresponding grid line testing and control clock in non-testing time section to the grid of each described grid line test switching transistor
Signal, the grid to each described data wire test switching transistor sends corresponding data wire testing and control clock signal；
In described non-testing time section, the described dutycycle of grid line testing and control clock signal is less than with the absolute value of the difference of 1
First predetermined duty cycle difference；Described data wire test control signal is data wire testing and control clock signal, described data wire
The dutycycle of testing and control clock signal is less than the second predetermined duty cycle difference with the absolute value of the difference of 1.
4. test contactor control unit as claimed in claim 3, it is characterised in that described first scheduled time difference and
Described second scheduled time difference is all 0；In non-testing time section, the dutycycle of described grid line testing and control clock signal is 1,
The dutycycle of described data wire testing and control clock signal is 1.
5. the test contactor control unit as described in claim 3 or 4, it is characterised in that described grid line test switch control
Molding block includes the first grid line test switching transistor and the second grid line test switching transistor；The test switch control of described data wire
Molding block includes the first data wire test switching transistor and the second data wire test switching transistor；
Described first grid line test switching transistor, described second grid line test switching transistor, described first data wire test
Switching transistor is identical with the type of described second data wire test switching transistor；
First pole of described first grid line test switching transistor is connected with described grid line test signal extraction electrode, and described first
Second pole of grid line test switching transistor is connected with the first pole of described second grid line test switching transistor；
First pole of described first data wire test switching transistor is connected with described data wire test signal extraction electrode, described
Second pole of the first data wire test switching transistor is connected with the first pole of described second data wire test switching transistor；
Second pole of described second grid line test switching transistor and the gate drive signal outfan of described gate driver circuit
Connect, the second pole of described second data wire test switching transistor and the data voltage signal output of described data drive circuit
End connects；
Described bias control module is for testing grid and the institute of switching transistor in non-testing time section to described first grid line
State second data wire test switching transistor send first control clock signal, to described second grid line test switching transistor and
Described first data wire test switching transistor sends the second control clock signal；
It is anti-phase that described first control clock signal and described second controls clock signal；
Described first controls the cycle of clock signal less than the display cycle.
6. test contactor control unit as claimed in claim 5, it is characterised in that also include:
Grid line testing control module, grid and described second grid line with described first grid line test switching transistor are tested respectively
The grid of switching transistor connects, for controlling the grid of described first grid line test switching transistor in grid line testing time section
The first level is all accessed, to control described first grid line test switch crystalline substance with the grid of described second grid line test switching transistor
Body pipe and described second grid line test switching transistor are all opened；And,
Data wire testing control module, tests the grid of switching transistor and described second data with described first data wire respectively
The grid of line test switching transistor connects, for controlling described first data wire test switch crystalline substance in data wire testing time section
The grid of body pipe, the grid of described second data wire test switching transistor all access the first level, to control the described first grid
Line test switching transistor, described second grid line test switching transistor, described first data wire test switching transistor and institute
State the second data wire test switching transistor all to open.
7. a test contactor control method, is applied to the test electricity as described in any claim in claim 1 to 6
Way switch control unit, it is characterised in that described test contactor control method includes:
In non-testing time section, within each bias cycle, bias control module controls at each grid line test switching transistor
The absolute value of the difference between the first positive bias time and the first back bias voltage time being in back bias voltage of positive bias is less than the
One scheduled time difference, bias control module controls each data wire test switching transistor and is in the second positive bias of positive bias
The absolute value of the difference between time and the second back bias voltage time being in back bias voltage is less than the second scheduled time difference.
8. a test circuit, it is characterised in that include grid line test signal extraction electrode, data wire test signal extraction electrode
With the test contactor control unit as described in any claim in claim 1 to 6；
The grid line test switch control module that described test contactor control unit includes is drawn with described grid line test signal
Electrode connects；
The data wire test switch control module that described test contactor control unit includes tests signal with described data wire
Extraction electrode connects.
9. a display device, it is characterised in that include testing as claimed in claim 8 circuit.
10. display device as claimed in claim 9, it is characterised in that also include gate driver circuit and data drive circuit；
The bias control module that test contactor control unit in described test circuit includes is arranged at described raster data model
In circuit；
The grid line test switch control module that described gate driver circuit includes with described test contactor control unit is connected；
The data wire test switch control module that described data drive circuit and described test contactor control unit include is even
Connect.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610960992.1A CN106297617B (en) | 2016-10-28 | 2016-10-28 | Test circuit switch control unit, method, test circuit and display device |
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| CN201610960992.1A CN106297617B (en) | 2016-10-28 | 2016-10-28 | Test circuit switch control unit, method, test circuit and display device |
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| CN106297617A true CN106297617A (en) | 2017-01-04 |
| CN106297617B CN106297617B (en) | 2019-04-26 |
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| CN108154833A (en) * | 2018-01-03 | 2018-06-12 | 京东方科技集团股份有限公司 | The output detection circuit and its method of a kind of gate driving circuit, display device |
| CN108806563A (en) * | 2018-04-27 | 2018-11-13 | 南京中电熊猫平板显示科技有限公司 | A kind of detection circuit and display panel |
| CN108877620A (en) * | 2018-06-28 | 2018-11-23 | 京东方科技集团股份有限公司 | Drift control module, method, drive element of the grid, method and display device |
| CN113160762A (en) * | 2020-01-07 | 2021-07-23 | 京东方科技集团股份有限公司 | Bias compensation circuit of transistor, driving method of bias compensation circuit and display substrate |
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| CN106297617B (en) | 2019-04-26 |
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