CN106291776B - A kind of preparation method of the force-responsive photon crystal material based on nanometer forming technique - Google Patents
A kind of preparation method of the force-responsive photon crystal material based on nanometer forming technique Download PDFInfo
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Abstract
The invention discloses a kind of preparation method of the force-responsive photon crystal material based on nanometer forming technique, it is by the photon crystal structure parameter being pre-designed, etch caster, to prepare the elastomeric polymer soft template with inverse nanometer scale pattern, and using soft template as secondary template, by way of the transfer of three step patterns, " replicated " in high resiliency gel-in-matrix layer, to fix the lattice position of photonic crystal by the pattern " high-fidelity " on caster；Then, viscoelastic polymer is filled in the individual layer high resiliency gel viscoelastisity polymer composite layer for obtaining having photon crystal structure in lattice, then the photon crystal material with force-responsive is made in the method by successively imprinting.The preparation method of the present invention has the features such as technique is simple, flow is short, technological parameter is easily controllable, and template is reusable, and Product Precision grade is high, steady quality is reliable, and cost is relatively low relative to prior art.
Description
Technical field
The present invention relates to a kind of preparation method of photon crystal material, more particularly to a kind of power based on nanometer forming technique
The preparation method of Responsive photonic crystals material.
Background technology
The preparation of force-responsive photon crystal material is that the high resiliency gel rubber material of excellent in mechanical performance is filled in into nanometer
Completed in the photonic crystal lattice gap of magnitude.It passes through the stretching or compression of mechanics, high resiliency polymer network structure meeting
The increase or reduction of photonic crystal lattice spacing are inconjunction with, causes the change of diffraction wavelength and schemochrome, is realized physics shape
Become the sensing function for being converted into optical property change.Research shows that high resiliency gel is with having nanometer scale photon crystal structure
The sandwich construction that is combined into of viscoelastic polymer there is good mechanical response performance.This photonic crystal can both provide people
The discernmible color change of bore hole, can realize again external force change caused by intelligent display, make its sensing, monitoring etc.
Field has broad application prospects, the neck such as the Geotechnical Engineering that is particularly suitable for use in, Structural Engineering, Disaster Prevention and Reduction Engineering and Protective Engineering
Domain, it is possible to achieve intelligent sensing, disaster monitoring and visual control.
In the prior art, prepare the method for photon crystal material mainly have precision optical machinery processing method, colloidal self-assembly method and
Laser-holographic interferometry etc..Wherein, precision optical machinery processing method is by carrying out machine drilling on matrix material, being situated between using air
Matter and the refringence of matrix material obtain photonic crystal.
But precision optical machinery processing method can only process the photonic crystal of microwave section, micron dimension, nanometer scale can not be prepared
Photonic crystal；Also, the complex process of precision optical machinery processing method, involve great expense.
Colloidal self-assembly method be colloidal particle in colloidal solution in the presence of the noncovalent forces such as gravity, surface tension from
Hair ground becomes orderly photon crystal structure from disordered structure, and the time that the process needs is longer, and the lattice structure of formation is single,
And the defects of dislocation between layers, structure collapses, is more.Therefore, the long preparation period of colloidal self-assembly method, institute is prepared
Photonic crystal pattern types are few, structural controllability is poor；
Laser-holographic interferometry is the interference diffraction characteristic using light, dry to regulate and control by specific light beam combination
The light intensity distributions in field are related to, and are recorded with photosensitive material, so as to produce litho pattern.The periodic structure of figure is limited to
The intensity distribution of laser interference, and the structural cycle that existing laser interferometry obtains prepares institute commonly greater than optical maser wavelength
The structural cycle for obtaining photonic crystal is in micron dimension.Therefore, laser-holographic interferometry is difficult to the photon crystalline substance for preparing nanometer scale
Body.
Put it briefly, the following shortcoming of preparation method generally existing or deficiency of existing photon crystal material：Complex process,
Long preparation period, involve great expense；Also, prepared photonic crystal accuracy class is limited, pattern types are few, structural controllability
Difference.
The content of the invention
It is an object of the present invention to provide a kind of preparation side of the force-responsive photon crystal material based on nanometer forming technique
Method, it has the characteristics that, and technique is simple, short preparation period, template are repeatable utilizes, prepares that cost is low, and prepared photon is brilliant
Body precision is controllable up to nanometer scale, periodic structure.
The present invention is to achieve the above object the technical scheme adopted is that a kind of force-responsive based on nanometer forming technique
The preparation method of photon crystal material, it is characterised in that comprise the following steps：
The first step, the preparation process of quartzy caster
A quartz substrate is taken, it is brilliant by the photon being pre-designed using electron beam lithography and reactive ion etching technology
Body structural parameters, surface etch is carried out to quartz substrate, etched on the surface of quartz substrate and meet designed photon crystalline substance
The pattern A of body structural parameters, obtain the quartzy caster with pattern A；
Second step, the preparation process of dimethyl silicone polymer soft template
1st, surface anti sticking processing, and the strata of spin coating one on pattern A surface are carried out to the pattern A of above-mentioned quartzy caster
Dimethyl siloxane；
2nd, the dimethyl silicone polymer by quartzy caster and thereon is placed in vacuum drying chamber, is carried out under -0.1MPa
Gas disposal 30min is removed in pressurization；120 DEG C are warming up to again, and heat dries 10min at this temperature, so that dimethyl silicone polymer solidifies；
3rd, after dimethyl silicone polymer is fully cured, take out, be stripped at room temperature, obtain dimethyl silicone polymer soft mode
Plate；Now, the surface of dimethyl silicone polymer soft template carries pattern B；
3rd step, there is the preparation process of individual layer high resiliency gel-viscoelastic polymer composite bed of photon crystal structure
1st, silicon chip is taken, the strata methyl methacrylate of spin coating in its surface one is as tack coat, a floor height bullet successively
Property gel is as base layer；
2nd, dimethyl silicone polymer soft template is positioned on the base layer of silicon chip, is assembled into impressing sample, then, will
Impressing sample is put into nano marking press, carries out ultraviolet nanometer impressing, and good conformal basis is kept in soft template and base layer
On treat that base layer fully solidifies；
3rd, after the completion of imprinting, impressing sample is taken out, is stripped at room temperature, obtains the high resiliency gel using silicon chip as substrate
Structure sheaf, its surface carry pattern C, and the pattern C shape, size are congruent to above-mentioned pattern A；
4th, the even one layer of viscoelastic polymer of sol evenning machine is used on the pattern C of high resiliency gel structure layer, by pattern C groove
Filling is full, is then solidified under ultraviolet light, forms the individual layer high resiliency gel with photon crystal structure-viscoplasticity polymerization
Thing composite bed；
4th step, there is the preparation process of multilayer high resiliency gel-viscoelastic polymer composite bed of photon crystal structure
1st, it is high-elastic to continue spin coating on individual layer high resiliency gel-viscoelastic polymer composite bed with photon crystal structure
Property gel, and repeat the 3rd step 2~4 several times, the last floor height elastic gel of spin coating one again, stack thickness needed for being formed with
Silicon chip is multilayer high resiliency gel-viscoelastic polymer composite bed with photon crystal structure of substrate；
2nd, will be compound as multilayer high resiliency gel-viscoelastic polymer with photon crystal structure of substrate using silicon chip
It is placed in acetone soln and soaks, dissolve the polymethyl methacrylate tack coat on silicon substrate surface, so that brilliant with photon
Multilayer high resiliency gel-viscoelastic polymer composite bed of body structure separates with silicon chip, produces.
The technical effect directly brought by the technical proposal is that using the controllable force-responsive of nanometer forming technique preparation structure
Property photonic crystal, its technique is simple, short preparation period, prepares that cost is low, precision of photonic crystal can be effectively controlled nanometer amount
Level；Particularly, the periodic structure of photonic crystal is controllable obtained by preparing and has mechanical response performance.
To more fully understand the technical characterstic of above-mentioned technical proposal, describe in detail as follows：
1st, photonic crystal is prepared using nanometer forming technique, technological process is short (only to need four steps to prepare photon
Crystal), and technique controlling difficulty is low.It is therefore possible to shorten the manufacturing cycle of photonic crystal, raising efficiency, and improve product matter
The Stability and dependability of amount.
2nd, replicated using dimethyl silicone polymer soft template as secondary template (" reverse " pattern with nanometer scale)
Transfer photonic crystal pattern, it is due to that dimethyl silicone polymer has the characteristics that：Modulus of elasticity and surface energy are relatively low, suitable for
Large area film forming is carried out on its surface；Moreover, dimethyl silicone polymer good toughness, durable in use, the template once made can be with
Use more than 50~100 times under normal circumstances.Therefore, the preparation cost of photonic crystal can be greatly reduced.
3rd, photonic crystal pattern is processed as caster using transparent, hard quartz template, with large area, efficiently
Rate, high fidelity, it is simple and easy the advantages that.It is possible, firstly, to it is simple, directly go out large-area nano magnitude in its surface etch
, the photonic crystal pattern of different structure；Then, using quartz template as caster, used in its patterned surfaces and be similar to " inscription rubbing
Or printing " method, " duplication " goes out dimethyl silicone polymer soft template；Finally, by dimethyl silicone polymer soft template by stone
" reduction " comes out the photonic crystal pattern of the nanometer scale etched in advance on English caster with chapter and verse, it is ensured that whole
The fidelity of pattern in preparation process.Therefore, the machining accuracy grade for preferably resolving photonic crystal in the prior art can not
Nanometer scale, the poor technical problem of structural controllability of photonic crystal are brought up to by micron dimension.
4th, using functional material nanometer embossing, photonic crystal is prepared by three step pattern transfer processes.First, adopt
Photonic crystal pattern is completed from photoresist to the transfer of quartzy caster with reactive ion etching technology；Secondly, using heat cure
Soft template replica technique completes photonic crystal pattern from quartzy caster to the transfer of dimethyl silicone polymer soft template；Then,
Photonic crystal pattern is completed from dimethyl silicone polymer soft template to high resiliency gel using functional material nanometer embossing
Transfer, in the case where keeping pressure state high resiliency gel solidification shaping, can by high resiliency gelation process because of contraction distortion
Caused pattern " distortion " degree minimizes, and has successfully prepared with the nanometer scale photonic crystal pattern being pre-designed
High resiliency gel-in-matrix layer, the lattice position of photonic crystal is secured, viscoelastic polymer is filled in lattice i.e. available
Individual layer high resiliency gel-viscoelastic polymer composite bed with photon crystal structure；Finally, the technique is simply repeated with regard to energy
Required product is obtained, i.e., the structure stacked is produced by the method successively imprinted.
Generally, the core technology thought of above-mentioned technical proposal is carved using electron beam lithography and reactive ion
Erosion technology, by the photon crystal structure parameter being pre-designed, the rigid template with nanometer scale pattern is etched as master mold
Plate, to prepare the elastomeric polymer soft template with inverse nanometer scale pattern, and as secondary template, with mechanical property
Excellent high resiliency gel as matrix material, viscoelastic polymer as packing material, by way of the transfer of three step patterns,
" replicated " in high resiliency gel-in-matrix layer, secure the lattice position of photonic crystal by the pattern " high-fidelity " on caster
Put, viscoelastic polymer is filled in the individual layer high resiliency gel-viscoplasticity that can obtain having photon crystal structure in lattice
Nanometer scale, the structure-controllable photon with force-responsive is made in polymer composite layer, then the method by successively imprinting
Crystal.
It should be added that：
1st, in above-mentioned technical proposal, the controllability of (quartzy caster) photon crystal structure parameter is embodied in：Pass through tune
Save the exposure area of electron-beam direct writing equipment, can control the surface texture of photonic crystal, lattice period, lattice lateral dimension,
Effective area；By adjusting the selection ratio of reactive ion etching, can effectively control lattice longitudinal direction height.
2nd, in above-mentioned technical proposal, making raw material of the quartz substrate as caster why is selected, reason is：Quartz
The hardness of material is higher, and warpage or deformation will not occur；And quartzy colourless, transparent, printing opacity (saturating ultraviolet light).
Preferably, above-mentioned high resiliency gel includes polyacrylamide, polyethylene glycol, poly glycol ester or N- ethene
Pyrrolidones/acrylamide copolymer；Above-mentioned viscoelastic polymer include poly-dodecyl glyceryl itaconate, styrene or
Polystyrene.
What the optimal technical scheme was directly brought has the technical effect that, polyacrylamide, polyethylene glycol, poly ethylene glycol
The high resiliency gel of ester or N- vinylpyrrolidones/acrylamide copolymer, with poly-dodecyl glyceryl itaconate, benzene second
The sandwich construction that the viscoelastic polymer of alkene or polystyrene is combined into, there is good mechanical response performance.
Further preferably, above-mentioned spin coating is carried out using two step spin-coating methods：
The rotating speed of the first step is 500r/min, and the rotating speed of second step is 3000r/min.
What the optimal technical scheme was directly brought has the technical effect that, the rotating speed of the first step is relatively low, is to ensure spin coating liquid
Body effectively enters the groove on spin coating surface, gap, space etc.；The rotating speed of second step is higher, can effectively control spin-coated layer
Thickness, and ensure the flatness and finish of spin coating layer surface, it is even more important that, will generation pair in high speed spin coating process
The lower pressure of spin coating layer surface, to improve the compaction rate of spin-coated layer, avoid the appearance in bubble or space in spin-coated layer.
Further preferably, the running parameter of above-mentioned nano marking press is：Goal pressure is 100KPa, and the uv-exposure time is
5min。
What the optimal technical scheme was directly brought has the technical effect that, empirical data suggests that, goal pressure selection is 100KPa,
Uv-exposure selection of time is 5min, it can be ensured that viscoelastic polymer and high resiliency gel cementing and the quality of solidification.
In summary, the present invention is relative to prior art, with preparation method is simple, technological process is short, technical process is easy
In control, obtained photonic crystal precision can be effectively controlled nanometer scale, have good mechanical response performance etc. beneficial
Effect.
Brief description of the drawings
Fig. 1 is the preparation flow figure of quartzy caster and the dimethyl silicone polymer soft template of the present invention；
Fig. 2 is the acid amides of the single-layer polypropylene with photon crystal structure-poly-dodecyl glyceryl itaconic acid of the present invention
The preparation flow figure of salt composite bed；
Fig. 3 is the acid amides of the multi-layer polypropylene with photon crystal structure-poly-dodecyl glyceryl itaconic acid of the present invention
The preparation flow figure of salt composite bed.
Description of reference numerals：
1st, quartzy caster；2nd, dimethyl silicone polymer soft template；3rd, silicon chip；4th, polymethyl methacrylate bonds
Layer；5th, polyacrylamide photonic crystal base layer；6th, polyacrylamide structure sheaf；7th, have photon brilliant using silicon chip as substrate
The single-layer polypropylene acid amides of body structure-poly-dodecyl glyceryl itaconate composite bed；8th, having using silicon chip as substrate
The multi-layer polypropylene acid amides of photon crystal structure-poly-dodecyl glyceryl itaconate composite bed；9th, there is photonic crystal knot
The multi-layer polypropylene acid amides of structure-poly-dodecyl glyceryl itaconate composite bed.
Embodiment
With reference to the accompanying drawings and examples, the present invention is described in detail.
Embodiment 1
The preparation method of force-responsive photon crystal material is as follows：
1st, as shown in figure 1, the preparation process of quartzy caster is as follows：
(1) according to being actually needed, the structural parameters of photonic crystal is pre-designed, are mainly included：Surface texture is arranged for hexagonal
The column dot matrix of row, lattice period 200nm, raised column diameter are 100nm, and raised pillar height degree is 150nm, effective area
For 20 × 20mm2。
(2) one piece of quartz substrate (size is 25mm × 25mm) is taken, according to the structural parameters of above-mentioned photonic crystal, utilizes electricity
Photoresist of the beamlet photoetching technique to quartz substrate and thereon is exposed processing 30s, is obtained after development with design configuration
Photoresist；Then, processing 20min, mesh are performed etching using the photoresist of reactive ion etching technology to quartz substrate and thereon
Be that the figure on photoresist is exactly transferred on quartz substrate, obtain the quartzy caster 1 with pattern A.
Explanation：In the preparation process of above-mentioned quartzy caster 1, the controllability of photon crystal structure parameter is embodied in：It is logical
The exposure area of electron-beam direct writing equipment is overregulated, surface texture, lattice period, the lattice transverse direction chi of photonic crystal can be controlled
Very little, effective area；, can be with the longitudinal direction height of control lattice by adjusting the selection ratio of reactive ion etching.
2nd, as shown in figure 1, the preparation process of dimethyl silicone polymer soft template is as follows：
(1) surface anti sticking processing is carried out to the pattern A of above-mentioned quartzy caster, and by the poly dimethyl silicon after dilution with toluene
Oxygen alkane is spun on the pattern A surfaces after above-mentioned release treatment, rotated first under 500r/min speed through two step spin-coating methods
10s, dimethyl silicone polymer is uniformly spread out on pattern A surfaces, then rotate 15s under 3000r/min speed, get rid of
Unnecessary dimethyl silicone polymer, dimethyl silicone polymer is thinned and homogenized.
(2) dimethyl silicone polymer by above-mentioned quartzy caster 1 and thereon is placed in vacuum drying chamber, in -0.1MPa
Under carry out pressurization and remove gas disposal 30min；120 DEG C are warming up to again, and heat dries 10min at this temperature, so that dimethyl silicone polymer
Solidification.
(3) after dimethyl silicone polymer is fully cured, take out, be stripped at room temperature, it is soft to obtain dimethyl silicone polymer
Template 2 (now, the surface of dimethyl silicone polymer soft template carries pattern B).
Explanation：It is different in view of the skilled operation degree of different operating personnel, if dimethyl silicone polymer soft template
Thickness and lower hardness, the operation of subsequent step is not easy to, can be before the demoulding, then the strata dimethyl siloxane of spin coating one, heat
After drying solidification, it is stripped at room temperature.
3rd, as shown in Fig. 2 the single-layer polypropylene acid amides with photon crystal structure-poly-dodecyl glyceryl itaconate
The preparation process of composite bed is as follows：
(1) with the polymethyl methacrylate that the even 200nm of sol evenning machine is thick, the first speed in 500r/min on silicon chip 3
The lower rotation 10s of degree, makes polymethyl methacrylate uniformly be spread out on the surface of silicon chip 3, then under 3000r/min speed
50s is rotated, gets rid of unnecessary polymethyl methacrylate, polymethyl methacrylate is thinned and homogenized, forms poly- methyl
Methyl acrylate tack coat 4.
(2) existed first with the polyacrylamide that the even 400nm of sol evenning machine is thick on polymethyl methacrylate tack coat 4
8s is rotated under 500r/min speed, polyacrylamide is uniformly spread out on the surface of polymethyl methacrylate tack coat 4, so
30s is rotated under 3000r/min speed afterwards, gets rid of unnecessary polyacrylamide, polyacrylamide is thinned and homogenized, shape
Into polyacrylamide photonic crystal base layer 5.
(3) the pattern B of dimethyl silicone polymer soft template 2 is placed on group on polyacrylamide photonic crystal base layer 5
Impressing sample is dressed up, ultraviolet nanometer impressing is carried out, comprises the following steps that：
First, NIL-150 nano marking press is started, goal pressure is arranged to 100KPa, and impressing sample is put into nanometer pressure
In print machine, after pressurization is completed, uviol lamp is opened, the uv-exposure time is arranged to 5min, keeps good with base layer in soft template
It is good it is conformal on the basis of treat that base layer fully solidifies；
Then, impressing sample is taken out, is stripped at room temperature, polyacrylamide structure sheaf 6 (now, poly- third is formed after the demoulding
The surface of acrylamide structure sheaf 6 carries pattern C, and pattern C is congruent to above-mentioned pattern A).
(4) the even 150nm thickness poly-dodecyl glyceryl clothing health of sol evenning machine is used on the pattern C of polyacrylamide structure sheaf 6
Hydrochlorate, pattern C groove is filled completely, then solidified under ultraviolet light, formed the individual layer with photon crystal structure and gather
Acrylamide-poly-dodecyl glyceryl itaconate composite bed 7.
4th, as shown in figure 3, the multi-layer polypropylene acid amides with photon crystal structure-poly-dodecyl glyceryl itaconate
The preparation process of composite bed is as follows：
(1) in the single-layer polypropylene acid amides with photon crystal structure-poly-dodecyl glyceryl itaconate composite bed 7
On according to the 3rd (2) step methods described continue spin coating polyacrylamide, and repeat the 3rd (3)~3 (4) step several times, finally press again
According to the 3rd (2) step methods described spin coating polyacrylamide again, stack thickness needed for being formed has photon using silicon chip as substrate
The multi-layer polypropylene acid amides of crystal structure-poly-dodecyl glyceryl itaconate composite bed 8.
(2) by the above-mentioned acid amides of the multi-layer polypropylene with photon crystal structure-poly-dodecyl using silicon chip as substrate
Glyceryl itaconate composite bed 8 is placed in acetone soln, dissolves polymethyl methacrylate tack coat 4, until having light
The multi-layer polypropylene acid amides of sub- crystal structure-poly-dodecyl glyceryl itaconate composite bed 8 separates with silicon chip 3, produces
Multi-layer polypropylene acid amides with photon crystal structure-poly-dodecyl glyceryl itaconate composite bed 9.
Claims (4)
1. a kind of preparation method of the force-responsive photonic crystal based on nanometer forming technique, it is characterised in that including following step
Suddenly：
The first step, the preparation process of quartzy caster
A quartz substrate is taken, using electron beam lithography and reactive ion etching technology, by the photonic crystal knot being pre-designed
Structure parameter, surface etch is carried out to quartz substrate, is etched on the surface of quartz substrate and meets designed photonic crystal knot
The pattern A of structure parameter, obtain the quartzy caster with pattern A；
Second step, the preparation process of dimethyl silicone polymer soft template
(1) surface anti sticking processing, and the strata two of spin coating one on pattern A surface are carried out to the pattern A of above-mentioned quartzy caster
Methylsiloxane；
(2) dimethyl silicone polymer by quartzy caster and thereon is placed in vacuum drying chamber, is pressurizeed under -0.1MPa
Remove gas disposal 30min；120 DEG C are warming up to again, and heat dries 10min at this temperature, so that dimethyl silicone polymer solidifies；
(3) after dimethyl silicone polymer is fully cured, take out, be stripped at room temperature, obtain dimethyl silicone polymer soft template；
Now, the surface of dimethyl silicone polymer soft template carries pattern B；
3rd step, there is the preparation process of individual layer high resiliency gel-viscoelastic polymer composite bed of photon crystal structure
(1) silicon chip is taken, the strata methyl methacrylate of spin coating in its surface one is solidifying as tack coat, floor height elasticity successively
Glue is as base layer；
(2) dimethyl silicone polymer soft template is positioned on the base layer of silicon chip, is assembled into impressing sample, then, will pressed
Pull a proof and be put into nano marking press, carry out ultraviolet nanometer impressing, on the basis of soft template and base layer keep well conformal
Treat that base layer fully solidifies；
(3) after the completion of imprinting, impressing sample is taken out, is stripped at room temperature, obtains the high resiliency gel knot using silicon chip as substrate
Structure layer, its surface carry pattern C, and the pattern C shape, size are congruent to above-mentioned pattern A；
(4) the even one layer of viscoelastic polymer of sol evenning machine is used on the pattern C of high resiliency gel structure layer, pattern C groove is filled out
It is full of, is then solidified under ultraviolet light, forms individual layer high resiliency gel-viscoelastic polymer with photon crystal structure
Composite bed；
4th step, there is the preparation process of multilayer high resiliency gel-viscoelastic polymer composite bed of photon crystal structure
(1) spin coating high resiliency is continued on individual layer high resiliency gel-viscoelastic polymer composite bed with photon crystal structure
Gel, and repeat (2)~(4) of the 3rd step several times, finally the floor height elastic gel of spin coating one again, stacks thickness needed for being formed
Multilayer high resiliency gel-viscoelastic polymer composite bed with photon crystal structure using silicon chip as substrate；
(2) by multilayer high resiliency gel-viscoelastic polymer composite bed with photon crystal structure using silicon chip as substrate
It is placed in acetone soln and soaks, dissolve the polymethyl methacrylate tack coat on silicon substrate surface, so as to has photonic crystal
Multilayer high resiliency gel-viscoelastic polymer composite bed of structure separates with silicon chip, produces.
2. the preparation method of the force-responsive photonic crystal according to claim 1 based on nanometer forming technique, its feature
Be, the high resiliency gel be by polyacrylamide, polyethylene glycol, poly glycol ester or N- vinylpyrrolidones/
A kind of material in acrylamide copolymer is formed；The viscoelastic polymer be by poly-dodecyl glyceryl itaconate,
A kind of material in styrene or polystyrene is formed.
3. the preparation method of the force-responsive photonic crystal according to claim 1 based on nanometer forming technique, its feature
It is, above-mentioned spin coating is carried out using two step spin-coating methods：
The rotating speed of the first step is 500r/min, and the rotating speed of second step is 3000r/min.
4. according to the preparation method of any described force-responsive photonic crystals based on nanometer forming technique of claim 1-3,
Characterized in that, the running parameter of the nano marking press is：Goal pressure is 100KPa, and the uv-exposure time is 5min.
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| RU2632456C2 (en) * | 2012-12-21 | 2017-10-04 | Конинклейке Филипс Н.В. | Composition, ink for imprinting and imprinting method |
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