CN106268906A - A kind of gallium nitride base optic catalytic material of isoepitaxial growth and preparation method thereof - Google Patents
A kind of gallium nitride base optic catalytic material of isoepitaxial growth and preparation method thereof Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 83
- 239000000463 material Substances 0.000 title claims abstract description 71
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 230000003197 catalytic effect Effects 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000006555 catalytic reaction Methods 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
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- 230000000694 effects Effects 0.000 claims abstract description 11
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract 3
- 238000005516 engineering process Methods 0.000 claims description 14
- 238000000407 epitaxy Methods 0.000 claims description 10
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 6
- 150000004678 hydrides Chemical class 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 abstract description 16
- 230000001699 photocatalysis Effects 0.000 abstract description 9
- 238000007146 photocatalysis Methods 0.000 abstract description 9
- 239000013078 crystal Substances 0.000 abstract description 8
- 238000005286 illumination Methods 0.000 abstract description 6
- 238000001657 homoepitaxy Methods 0.000 abstract description 4
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- 238000005815 base catalysis Methods 0.000 abstract description 2
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract description 2
- STZCRXQWRGQSJD-GEEYTBSJSA-M methyl orange Chemical compound [Na+].C1=CC(N(C)C)=CC=C1\N=N\C1=CC=C(S([O-])(=O)=O)C=C1 STZCRXQWRGQSJD-GEEYTBSJSA-M 0.000 description 9
- 229940012189 methyl orange Drugs 0.000 description 9
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
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- 238000000926 separation method Methods 0.000 description 2
- STZCRXQWRGQSJD-UHFFFAOYSA-M sodium;4-[[4-(dimethylamino)phenyl]diazenyl]benzenesulfonate Chemical compound [Na+].C1=CC(N(C)C)=CC=C1N=NC1=CC=C(S([O-])(=O)=O)C=C1 STZCRXQWRGQSJD-UHFFFAOYSA-M 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000002083 X-ray spectrum Methods 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical compound N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
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- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/24—Nitrogen compounds
-
- B01J35/39—
Abstract
Gallium nitride base optic catalytic material that the invention discloses a kind of isoepitaxial growth and preparation method thereof.The gallium nitride base optic catalytic material of the present invention includes the most successively: N-shaped nitridation based substrate, gallium nitride-based epitaxial layer and metal level；The present invention uses the mode of N-shaped nitridation gallio substrate homoepitaxy growth GaN base catalysis material, the problem solving the epitaxial layer crystal mass difference that heteroepitaxial growth brings due to lattice mismatch and thermal mismatching, saves grown buffer layer etc. and improves the step of heteroepitaxial growth crystal mass；Employing N-shaped nitridation based substrate constitutes PIN heterojunction structure together with making the GaN base epitaxial layer that substrate grows with MOCVD, and its built in field makes photo-generated carrier efficiently separate, and substantially increases the catalysis activity of material；Nitride catalysis material prepared by the present invention shows the degrading activity of excellence under light illumination to azo dyes such as methyl oranges, demonstrates that it, in the potential using value of photocatalysis field, has broad application prospects in terms of sewage disposal.
Description
Technical field
The present invention relates to sewage disposal and energy utilization technology, be specifically related to the nitridation gallio light of a kind of isoepitaxial growth
Catalysis material and preparation method thereof.
Background technology
Along with population drastically expand and industry fast development, energy and the pollution of water resource, be the whole world face two
Individual significant challenge, a large amount of discharges of a large amount of soluble azo dyes such as the methyl orange of a large amount of pollutant emissions, especially dyeing,
Ambient water quality is made to go from bad to worse.Conductor photocatalysis degradation of contaminant has important research to anticipate as a kind of green environmental protection technique
Justice and using value.In conductor photocatalysis is studied, seek new and effective catalysis material, prepare high stability, height
It is catalyzed the catalysis material of active, big spectral response range, is applied to improvement of environment, energy development to solving photocatalysis technology
Etc. aspect there is important strategic importance.
In conductor photocatalysis is studied, due to TiO2Chemical stability is good, low cost, catalytic efficiency high, but shortcoming
It is can only ultraviolet light response, it is impossible to maximally utilize solar energy.TiO2Energy gap be 3.2eV, it would be desirable to be able to more than 3.2eV
The wavelength ultraviolet light less than 380nm just can make it excite generation photo-generate electron-hole pair, and therefore the response to visible ray is low, leads
Cause solar energy utilization ratio low (only utilization about 3～the ultraviolet portion of 5%).Although can reach visible light-responded by doping,
But efficiency comparison is low.Light induced electron and the most compound of photohole greatly reduce TiO simultaneously2Light-catalysed quantum is imitated
Rate, directly influences TiO2The catalysis activity of photocatalyst.Start work turn-around design for a part of researcher of this bottleneck
On the novel semi-conductor photocatalyst of efficient wide-spectrum response.
Chemically from the point of view of the aspect such as stability, band structure, material system, nitride semi-conductor material gallium nitride GaN, nitrogen
Change the novel semiconductor material that aluminum AlN and InN is superior performance, in the existing consequence of photoelectric field and application prospect, reason
High catalytic activity, the catalysis material of high catalytic efficiency can also be become on Lun.Gallium nitride material cording has wider carrying, its
Physicochemical properties are the most more stable, high temperature resistant, corrosion-resistant.Ternary alloy three-partalloy (AlGaN, InGaN) makes the band gap of GaN base material exist
In 0.7～6.23eV adjustable, by light absorbing zone adulterate In component, nitride material can provide several corresponding to solar spectral
Perfectly mate energy gap, have great potentiality to improve light absorpting ability, expand the spectral response range of catalysis material.Partly lead
At the bottom of the conduction band of body and top of valence band represents electronics or the limit of Hole oxidation reducing power, nitride material has wide energy gap,
If GaN, AlGaN, AlN of the employing broad stopband, surface of catalysis material, light induced electron and the hole of nitride material can be made
There is higher oxidation and reducing power.By doping Si or Mg, nitride material can obtain the N-shaped that carrier concentration is higher
With p-type GaN, and the semi-conducting material of heterojunction structure is beneficial to realize the separation of photo-generated carrier, improves the life-span of electronics and hole,
Improve photocatalytic degradation efficiency.
Metal Organic Vapor epitaxial growth MOCVD (metalorganic chemical
Vapordeposition) it has been widely used for growth quality reliable multilayer hetero-structure nitride material, has been used for different at present
The backing material of matter epitaxial growth GaN is sapphire mostly, and the problem the most generally existed is exactly to deposit between substrate and GaN
In bigger character mismatch and coefficient of thermal expansion mismatch, it will usually bring substantial amounts of defect (up to 108～1010cm-2).For life
Growing the high-quality GaN material of low dislocation, homoepitaxy technology becomes the weight of nitride-based semiconductor forward position focus and industry research and development
Want content.Hydride gas-phase epitaxy (HVPE) technology has that growth rate is high, manufacturing cost is relatively low, equipment and technique relatively easy
Etc. advantage, uniform, large scale stressless Free-standing GaN thick film can be grown, as further MOCVD growth GaN device
Substrate.
Summary of the invention
For above problems of the prior art, the present invention proposes the nitridation gallio light of a kind of isoepitaxial growth
Catalysis material and preparation method thereof.
It is an object of the present invention to propose the gallium nitride base optic catalytic material of a kind of isoepitaxial growth.
The gallium nitride base optic catalytic material of the isoepitaxial growth of the present invention includes the most successively: N-shaped nitridation gallio
Substrate, gallium nitride-based epitaxial layer and metal level；Wherein, the gallium nitride-based epitaxial layer being grown on N-shaped nitridation based substrate is PIN
Heterojunction structure, includes n-GaN base epitaxial layer, multiple quantum well layer and p-GaN base epitaxial layer the most successively；The material of metal level
Use chemically inert metal；Homogenous growth n-GaN base epitaxial layer on N-shaped nitridation based substrate, thus gallium nitride-based epitaxial
Layer still constitutes PIN heterojunction structure with N-shaped nitridation based substrate, and the built in field of PIN heterojunction structure promotes photo-generated carrier to have
Effect separates, and improves the catalysis activity of catalysis material.
N-shaped nitridation based substrate uses hydride gas-phase epitaxy HVPE growing technology to prepare.
The material of metal level uses Pt or Au, and thickness is 20～300nm.
The gross thickness of gallium nitride-based epitaxial layer is 2～8 μm；The thickness of p-GaN base epitaxial layer is 50～500nm；N-GaN base
The thickness of epitaxial layer is 500nm～6 μm.
The periodicity of multiple quantum well layer is about 5～100, and wherein, well layer uses InxGa1-xN, thickness is 2～8nm；
InxGa1-xIn N, x represents the atomic number ratio of In, and atomic number ratio is 0.1≤x≤0.8；Barrier layer uses GaN base material, thickness
2～8nm.
Further object is that the preparation of the gallium nitride base optic catalytic material that a kind of isoepitaxial growth is provided
Method.
The preparation method of the gallium nitride base optic catalytic material of the isoepitaxial growth of the present invention, comprises the following steps:
1) hydride gas-phase epitaxy technology HVPE growing n-type nitridation based substrate is used；
2) use Metal Organic Vapor epitaxy technology MOCVD at N-shaped nitridation gallio Grown nitridation gallio
Outward
Prolonging layer, gallium nitride-based epitaxial layer is PIN heterojunction structure, including n-GaN base epitaxial layer, multiple quantum well layer and p-GaN
Base
Epitaxial layer；
3) in step 2) plate one layer of chemically inert metal on the gallium nitride-based epitaxial layer that grows, obtain described photocatalysis material
Material.
Wherein, in step 1) in, at a temperature of 300K, the resistivity of N-shaped nitridation based substrate should be less than 0.1 Ω cm.
In step 2) in, use Metal Organic Vapor epitaxy technology MOCVD to nitrogenize gallio Grown at N-shaped
In gallium nitride-based epitaxial layer, using the one in trimethyl gallium, trimethyl indium and trimethyl aluminium as III source, ammonia is as V
Clan source, silane is as N-shaped doped source, and two cyclopentadienyl magnesium are as p-type doped source.The gross thickness of gallium nitride-based epitaxial layer is about 2～8 μm；
The periodicity of MQW is 5～100, and wherein, well layer uses InxGa1-xN, thickness is 2～8nm；InxGa1-xIn N, x represents In
Atomic number ratio, atomic number ratio is 0.1≤x≤0.8；Barrier layer uses GaN base material, and thickness is 2～8nm.
In step 3), the material of metal level uses Pt or Au, and thickness is 20～300nm.
Prior art uses sapphire as substrate, owing to sapphire is non-conductive, need first to be peeled off by sapphire；And this
Invention uses homogeneity N-shaped nitridation based substrate, and not only conduction need not peel off, and constitutes PIN hetero-junctions with GaN base epitaxial layer
Structure, the built in field of PIN heterojunction structure promotes photo-generated carrier to efficiently separate, and has high photoelectric transformation efficiency；Nitrogenize at N-shaped
Homogenous growth GaN base epitaxial layer on based substrate, solves heteroepitaxial growth simultaneously and brings due to lattice mismatch and thermal mismatching
The problem of epitaxial layer crystal mass difference, grown buffer layer etc. can be saved and improve the step of heteroepitaxial growth crystal mass.
The catalysis material of the present invention can be used as can effectively degrading under the electrode of photoelectrochemistrpool pool PEC of degradable organic pollutant, illumination
Organic pollution such as methyl orange etc..
Advantages of the present invention:
The present invention uses the mode of N-shaped nitridation gallio substrate homoepitaxy growth GaN base catalysis material, solves heterogeneous
The problem of the epitaxial layer crystal mass difference that epitaxial growth brings due to lattice mismatch and thermal mismatching, can save grown buffer layer etc.
Improve the step of heteroepitaxial growth crystal mass；N-shaped nitridation based substrate is used to make substrate and the GaN base of MOCVD growth
Epitaxial layer constitutes PIN heterojunction structure together, and its built in field makes photo-generated carrier efficiently separate, and substantially increases urging of material
Change activity；Nitride catalysis material prepared by the present invention shows the degraded of excellence under light illumination to azo dyes such as methyl oranges
Activity, demonstrates that it, in the potential using value of photocatalysis field, has broad application prospects in terms of sewage disposal.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of an embodiment of the gallium nitride base optic catalytic material of the isoepitaxial growth of the present invention, its
Middle N-shaped nitridation based substrate 1, n-GaN layer 2, multiple quantum well layer 3, p-GaN layer 4 and metal level 5；
Fig. 2 is outside the nitridation gallio of an embodiment of the gallium nitride base optic catalytic material of the isoepitaxial growth of the present invention
Prolong layer photoluminescence spectrum at a temperature of 300K；
Fig. 3 is the synchrotron radiation of the MQW of an embodiment of the gallium nitride base optic catalytic material of isoepitaxial growth
X-ray diffraction spectrum；
Fig. 4 is that an embodiment of the gallium nitride base optic catalytic material of the isoepitaxial growth of the present invention is to methyl orange degradation
Photocatalysis effect figure.
Detailed description of the invention
Below in conjunction with the accompanying drawings, by specific embodiment, the present invention is expanded on further.
As it is shown in figure 1, the gallium nitride base optic catalytic material of the isoepitaxial growth of the present embodiment includes the most successively:
N-shaped nitridation based substrate 1, n-GaN layer 2, multiple quantum well layer 3, p-GaN layer 4 and metal level 5.
The preparation method of the gallium nitride base optic catalytic material of the isoepitaxial growth of the present embodiment, comprises the following steps:
1) using the N-shaped nitridation based substrate 1 of the Ge doping of hydride gas-phase epitaxy technology HVPE growth, this substrate exists
At a temperature of 300K, resistivity is less than 0.05 Ω cm, size 10.0mm × 10.5mm, and thickness 350 ± 25 μm, crystal orientation is c-
Plane (0001) direction.
2) using MOCVD growing system, using trimethyl gallium TMGa, trimethyl indium TMIn, trimethyl aluminium TMAl is III
Source, ammonia NH3 as p-type doped source, nitrogenizes at N-shaped as N-shaped doped source, two cyclopentadienyl magnesium Cp2Mg as group V source, silane SiH4
The gallium nitride-based epitaxial layer of PIN heterojunction structure is grown, including 2,30 cycle of n-GaN layer of 2 μ m-thick on based substrate
In0.3GaN (3nm)/GaN (3nm) MQW 3, the p-GaN layer 4 of 200nm.
As in figure 2 it is shown, the photoluminescence spectrum peak position that gallium nitride-based epitaxial layer is at a temperature of 300K is 520nm, display growth
Gallium nitride-based epitaxial layer can be with absorbing wavelength less than the light of 520nm, absorption spectra can cover wider solar spectrum scope.
As it is shown on figure 3, the synchrotron radiation X ray spectrum of MQW has the satellites of multiple quantum trap, show this
The In of open-birth length0.3The periodic diffractive that the trap of GaN/GaN MQW builds interface formation is clear, has good crystal mass.
3) surface at the nitride epitaxial layer of growth uses electron beam evaporation deposition method evaporation Ti (5nm)/Pt
(120nm), metal level 5 is formed, as shown in Figure 1.
As the electrode of photoelectrochemistrpool pool PEC, the catalysis material of preparation is put into methyl orange concentration is that 2mg/L, KCl are dense
Spending in the electrolyte solution for 1mol/L 60mL altogether, PEC is 6mm × 6mmPt sheet to electrode.At room temperature measure, the pH of solution
Value is 5.59.When carrying out photo-catalytic degradation of methyl-orange, using high pressure Hg lamp to provide light source, sample distance light source 5cm, light can shine
Penetrate surface area of sample about 1cm2, taking 2mL methyl orange solution in centrifuge tube every 30min, total reaction time is 5 hours.Reaction
Terminate, after each sample of taking-up is performing centrifugal separation on, survey its absorbance at about 460nm with ultraviolet-visible spectrophotometer,
The concentration of methyl orange is remained, the nitride catalysis material prepared with this method reacting the present invention after going out each degradation time section
The effect of degraded methyl orange.As shown in Figure 4, owing to the illumination used is ultraviolet source, without nitride catalysis material electrode
Under same light conditions, methyl orange solution also has a certain degree of degraded.It is added in homoepitaxy on N-shaped nitridation based substrate raw
Under long nitride catalysis material electrode case, methyl orange degradation speed is greatly promoted, and after illumination 1.5h, urges at effective light
Change nitride film material area only 1cm2Under conditions of, degradation rate has reached 80%, and after illumination 4h, methyl orange degradation rate reaches
To more than 98%.On N-shaped nitridation based substrate, the nitride catalysis material of isoepitaxial growth shows excellent photocatalysis
Activity and using value.When specifically applying, photochemical catalyst electrode can be done, by growing large-area nitride catalysis material between material also
Connection can also improve degradation rate further.
It is finally noted that, publicize and implement the purpose of example and be that help is further appreciated by the present invention, but this area
Those of skill will appreciate that: without departing from the spirit and scope of the invention and the appended claims, various replacements and repairing
It is all possible for changing.Therefore, the present invention should not be limited to embodiment disclosure of that, and the scope of protection of present invention is with power
Profit claim defines in the range of standard.
Claims (10)
1. the gallium nitride base optic catalytic material of an isoepitaxial growth, it is characterised in that described catalysis material is from bottom to up
Include successively: N-shaped nitridation based substrate, gallium nitride-based epitaxial layer and metal level；Wherein, it is grown on N-shaped nitridation based substrate
Described gallium nitride-based epitaxial layer be PIN heterojunction structure, include the most successively n-GaN base epitaxial layer, multiple quantum well layer and
P-GaN base epitaxial layer；The material of described metal level uses chemically inert metal；Homogenous growth on N-shaped nitridation based substrate
N-GaN base epitaxial layer, thus gallium nitride-based epitaxial layer still constitutes PIN heterojunction structure with N-shaped nitridation based substrate, PIN is heterogeneous
The built in field of structure promotes photo-generated carrier to efficiently separate, and improves the catalysis activity of catalysis material.
2. catalysis material as claimed in claim 1, it is characterised in that described N-shaped nitridation based substrate uses hydride gas
Prepared by phase epitaxy HVPE growing technology.
3. catalysis material as claimed in claim 1, it is characterised in that the material of described metal level uses Pt or Au, thickness
It is 20～300nm.
4. catalysis material as claimed in claim 1, it is characterised in that the gross thickness of described gallium nitride-based epitaxial layer is 2～8
μm；The thickness of p-GaN base epitaxial layer is 50～500nm；The thickness of n-GaN base epitaxial layer is 500nm～6 μm.
5. catalysis material as claimed in claim 1, it is characterised in that the periodicity of described multiple quantum well layer be about 5～
100, wherein, well layer uses InxGa1-xN, thickness is 2～8nm；Barrier layer uses GaN base material, and thickness is 2～8nm, and x represents In
Atomic number ratio.
6. catalysis material as claimed in claim 5, it is characterised in that described InxGa1-xIn N, atomic number ratio is 0.1≤x
≤0.8。
7. the preparation method of the gallium nitride base optic catalytic material of an isoepitaxial growth, it is characterised in that described preparation method
Comprise the following steps:
1) hydride gas-phase epitaxy technology HVPE growing n-type nitridation based substrate is used；
2) Metal Organic Vapor epitaxy technology MOCVD is used to nitrogenize gallio Grown gallium nitride-based epitaxial at N-shaped
Layer, gallium nitride-based epitaxial layer is PIN heterojunction structure, including n-GaN base epitaxial layer, multiple quantum well layer and p-GaN base epitaxial layer；
3) in step 2) plate one layer of chemically inert metal on the gallium nitride-based epitaxial layer that grows, obtain described catalysis material.
8. preparation method as claimed in claim 7, it is characterised in that in step 1) in, at a temperature of 300K, N-shaped gallium nitride
The resistivity of base substrate should be less than 0.1 Ω cm.
9. preparation method as claimed in claim 7, it is characterised in that in step 2) in, use Metal Organic Vapor
Epitaxy technology MOCVD N-shaped nitridation gallio Grown gallium nitride-based epitaxial layer in, use trimethyl gallium, trimethyl indium and
One in trimethyl aluminium is adulterated as p-type as N-shaped doped source, two cyclopentadienyl magnesium as group V source, silane as III source, ammonia
Source；The gross thickness of gallium nitride-based epitaxial layer is about 2～8 μm；The periodicity of MQW is 5～100, and wherein, well layer uses
InxGa1-xN, thickness is 2～8nm；InxGa1-xIn N, x represents the atomic number ratio of In, and atomic number ratio is 0.1≤x≤0.8；
Barrier layer uses GaN base material, and thickness is 2～8nm.
10. preparation method as claimed in claim 7, it is characterised in that in step 3), the material of metal level uses Pt or Au,
Thickness is 20～300nm.
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Cited By (1)
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108193230A (en) * | 2017-12-29 | 2018-06-22 | 厦门理工学院 | A kind of optoelectronic pole of tantalum Grown InxGa1-xN nano wires and preparation method thereof |
| CN108193230B (en) * | 2017-12-29 | 2019-07-30 | 厦门理工学院 | In is grown on a kind of tantalum lining bottomxGa1-xThe optoelectronic pole and preparation method thereof of N nano wire |
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