CN106268813A - A kind of CuFeO for photoelectrocatalysis2the preparation method of nano material - Google Patents
A kind of CuFeO for photoelectrocatalysis2the preparation method of nano material Download PDFInfo
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- CN106268813A CN106268813A CN201610838256.9A CN201610838256A CN106268813A CN 106268813 A CN106268813 A CN 106268813A CN 201610838256 A CN201610838256 A CN 201610838256A CN 106268813 A CN106268813 A CN 106268813A
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- cufeo
- nano material
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- dried
- photoelectrocatalysis
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910016514 CuFeO2 Inorganic materials 0.000 claims abstract description 38
- 239000011521 glass Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract 2
- 239000002243 precursor Substances 0.000 claims description 18
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 10
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- 239000007888 film coating Substances 0.000 claims description 5
- 238000009501 film coating Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 238000002231 Czochralski process Methods 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- 229910021607 Silver chloride Inorganic materials 0.000 abstract description 2
- 230000008033 biological extinction Effects 0.000 abstract description 2
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 13
- 239000010949 copper Substances 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000001699 photocatalysis Effects 0.000 description 3
- 238000006303 photolysis reaction Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910002554 Fe(NO3)3·9H2O Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/74—Iron group metals
- B01J23/745—Iron
-
- B01J35/33—
-
- B01J35/39—
-
- B01J35/40—
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/02—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen
- C01B3/04—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by decomposition of inorganic compounds, e.g. ammonia
- C01B3/042—Decomposition of water
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G49/00—Compounds of iron
- C01G49/02—Oxides; Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
Abstract
The invention discloses and belong to technical field of material, particularly for the CuFeO of photoelectrocatalysis2The preparation method of nano material.CuFeO is prepared first by sol-gal process2Presoma, then uses Best-Effort request technique to complete plated film on ITO electro-conductive glass, after drying baker is dried, puts into Muffle furnace and make annealing treatment, and then obtain nanometer CuFeO2Thin film.The CuFeO that the present invention is obtained2Nano material, after the test of scanned electron microscope observation, film forming is fine and close.The CuFeO that the present invention is obtained2Nano material is after ultra-violet and visible spectrophotometer and electrochemical workstation are tested, and extinction reaches 325nm, and photoelectric current reaches 1.7mA cm2(1.2V vs Ag/AgCl)。
Description
Technical field
The invention belongs to technical field of material, a kind of CuFeO for photoelectrocatalysis2The system of nano material
Preparation Method.
Background technology
Enter new century energy problem later and become the matter of utmost importance of facing mankind, and the abuse of traditional fossil energy is right
The destruction of environment for human survival, also making taps a new source of energy becomes urgent problem.Hydrogen Energy is as the secondary energy of clean and effective
Source, the water into cleaning of originating, rich reserves, and also pollution-free after burning；Utilize solar energy photodissociation Aquatic product hydrogen technology, can be effective
Chemical energy must be converted the solar into.Within 1972, Fujishima and Honda reports first TiO2Semi-conducting electrode is formed
Electrochemical cell, it converts optical energy into the chemical energy of hydrogen and oxygen by the method for photocatalytic water.Since then, solar energy photodissociation
All make great progress in the resonable application of touching upon of the research of Aquatic product hydrogen.
Solar energy is converted into chemical energy by photochemical reaction, is the final mesh of sunlight catalytic hydrogen production by water decomposition
, as a kind of cleaning and also be capable of its technological core of mode utilizing solar energy of sustainable development be exploitation efficiently,
Stable catalysis material.From the point of view of the mechanism of photodissociation Aquatic product hydrogen and its course of reaction, to develop visible light-responded model
Enclose wide photocatalytic water catalysis material, it is necessary to possess following two key element: (1) semi-conducting material must have narrow band gap
(1.23eV < Eg < 3.0eV) and the band structure of coupling；(2) light excites the hole of generation and electronics to be efficiently separated, from
And stop the compound of its body phase and surface.In addition to two above condition, in addition it is also necessary to phase on catalyst surface can be moved to
The reaction site answered, produces H with this2With O2。
Therefore, find suitable method and promote that light induced electron separates, increases the utilization rate of photo-generated carrier with hole, and
And in place of exploitation novel photocatalysis material just becomes the key improving solar energy decomposition water hydrogen generation efficiency.At numerous quasiconductor materials
In the middle of material, CuFeO2Copper oxide (ABO as delafossite structure2One of), there is p-type electric-conducting characteristic, can effectively utilize too
Sunlight, has preferable photoelectrocatalysis application potential.
Summary of the invention
It is an object of the invention to propose a kind of CuFeO for photoelectrocatalysis2The preparation method of nano material.
A kind of CuFeO for photoelectrocatalysis that the present invention provides2The preparation method of nano material is as follows: first by molten
Sol-gel prepares CuFeO2Presoma, then uses dipping-czochralski process to complete plated film on ITO electro-conductive glass, through overdrying
After dry case is dried, puts into Muffle furnace and make annealing treatment, and then obtain nanometer CuFeO2Thin film.
The present invention is given at the concrete technology parameter on the basis of said method further:
1, preparation CuFeO2The technological parameter of precursor sol: first by Schweinfurt green (Cu (CH3COOH)2·H2And nitric acid O)
Ferrum (Fe (NO3)3·9H2O) dehydrated alcohol (CH is added to according to the ratio of mol ratio 1:13CH2OH), in, under room temperature, stirring is to molten
Liquid is clarified, and it hydrolyzes 24～72h at normal temperatures and pressures, prepares CuFeO2Precursor sol is standby, described CuFeO2Presoma is molten
The concentration of glue is 0.2～0.5mol/L.
2, preparation CuFeO2The technological parameter of thin film: the ITO electro-conductive glass cleaned up is existed with the speed of 1～5mm/s
CuFeO2In precursor sol after Best-Effort request, put in 80 DEG C of baking ovens and be dried；Then carry out repeating plated film, secondary plating will be completed
The ITO electro-conductive glass of film is placed in 80 DEG C of baking ovens and is dried 1～4h.
3, preparation CuFeO2The technological parameter of nano material: by dried CuFeO2Thin film is placed in Muffle furnace at 550 DEG C
Make annealing treatment, obtain CuFeO2Nano material.
The mechanism of action of the present invention is: when using up irradiation semiconductor light-catalyst, and quasiconductor can absorb and be equal to or big
Photon in its energy gap makes electronics be stimulated, thus is transitted to conduction band by valence band and introduce light induced electron, and in valence band phase
Answer and on position, leave photohole, form photo-generate electron-hole pair.Light induced electron and photohole are respectively provided with the strongest energy of oxidation
Power and reducing power.Under photoelectricity acts on simultaneously, H2O is generated O by Hole oxidation2, and the H in water+It is reduced generation H2。
The CuFeO that the present invention is obtained2Nano material, tests through ultra-violet and visible spectrophotometer and electrochemical workstation
After, photoelectric properties significantly improve.
Beneficial effect
1, a kind of CuFeO for photoelectrocatalysis2Nano material, contributes to effectively utilizing solar energy to produce hydrogen, promotes the sun
The application of energy.
2, a kind of CuFeO for photoelectrocatalysis2The preparation method of nano material, product is pollution-free, clean environment firendly.
Accompanying drawing explanation
Fig. 1 is the CuFeO of gained in embodiment2The scanning electron microscope image of nano material.
Fig. 2 is the CuFeO of gained in embodiment 12Nano material is through ultraviolet-visible spectrophotometer test result.
Fig. 3 is the CuFeO of gained in embodiment 12Nano material is through electrochemical workstation test result.
Detailed description of the invention
The following examples can make those skilled in the art be more completely understood by the present invention, but limits never in any form
The present invention.
Embodiment 1
First, the CuFeO that sol-gal process prepares 0.5mol/L is used2Precursor sol, with Schweinfurt green (Cu
(CH3COOH)2·H2And ferric nitrate (Fe (NO O)3)3·9H2O) it is respectively copper source and source of iron, with dehydrated alcohol (CH3CH2OH) it is
Solvent, stirs under room temperature and clarifies to solution, it hydrolyzes 72h at normal temperatures and pressures, prepare CuFeO2Precursor sol is standby.Adopt
By dipping-pulling method CuFeO2Presoma is coated on ITO electro-conductive glass: by the ITO electro-conductive glass that cleans up with 1mm/s
Speed at CuFeO2Lift with the speed of 1mm/s again after precursor sol impregnating and stopping 20s, put in baking oven at 80 DEG C
Lower dry；Then carry out repeating plated film, the ITO electro-conductive glass completing secondary film coating is placed in 80 DEG C of baking ovens and is dried 2h.Will be dry
CuFeO after dry2Thin film is placed in Muffle furnace and makes annealing treatment with 2 DEG C/min when 550 DEG C, naturally cools to after insulation 2h
Room temperature, obtains CuFeO2Nano material.
The CuFeO obtained2Nano material, film forming is fine and close, and scanning electron microscopic observation test result is as shown in Figure 1.The present invention
The CuFeO obtained2Nano material is after ultra-violet and visible spectrophotometer and electrochemical workstation are tested, and extinction reaches
325nm, photoelectric current reaches 1.7mA cm2(1.2V vs Ag/AgCl), test result is the most as shown in Figure 2 and Figure 3.
Embodiment 2
First, the CuFeO that sol-gal process prepares 0.4mol/L is used2Precursor sol, with Schweinfurt green (Cu
(CH3COOH)2·H2And ferric nitrate (Fe (NO O)3)3·9H2O) it is respectively copper source and source of iron, with dehydrated alcohol (CH3CH2OH) it is
Solvent, stirs under room temperature and clarifies to solution, it hydrolyzes 60h at normal temperatures and pressures, prepare CuFeO2Precursor sol is standby.Adopt
By dipping-pulling method CuFeO2Presoma is coated on ITO electro-conductive glass: by the ITO electro-conductive glass that cleans up with 2mm/s
Speed at CuFeO2Lift with the speed of 2mm/s again after precursor sol impregnating and stopping 20s, put in baking oven at 80 DEG C
Lower dry；Then carry out repeating plated film, the ITO electro-conductive glass completing secondary film coating is placed in 80 DEG C of baking ovens and is dried 3h.Will be dry
CuFeO after dry2Thin film is placed in Muffle furnace and makes annealing treatment with 2 DEG C/min when 550 DEG C, naturally cools to after insulation 2h
Room temperature, obtains CuFeO2Nano material.
Embodiment 3
First, the CuFeO that sol-gal process prepares 0.3mol/L is used2Precursor sol, with Schweinfurt green (Cu
(CH3COOH)2·H2And ferric nitrate (Fe (NO O)3)3·9H2O) it is respectively copper source and source of iron, with dehydrated alcohol (CH3CH2OH) it is
Solvent, stirs under room temperature and clarifies to solution, it hydrolyzes 48h at normal temperatures and pressures, prepare CuFeO2Precursor sol is standby.Adopt
By dipping-pulling method CuFeO2Presoma is coated on ITO electro-conductive glass: by the ITO electro-conductive glass that cleans up with 4mm/s
Speed at CuFeO2Lift with the speed of 4mm/s again after precursor sol impregnating and stopping 20s, put in baking oven at 80 DEG C
Lower dry；Then carry out repeating plated film, the ITO electro-conductive glass completing secondary film coating is placed in 80 DEG C of baking ovens and is dried 3h.Will be dry
CuFeO after dry2Thin film is placed in Muffle furnace and makes annealing treatment with 2 DEG C/min when 550 DEG C, naturally cools to after insulation 2h
Room temperature, obtains CuFeO2Nano material.
Embodiment 4
First, the CuFeO that sol-gal process prepares 0.2mol/L is used2Precursor sol, with Schweinfurt green (Cu
(CH3COOH)2·H2And ferric nitrate (Fe (NO O)3)3·9H2O) it is respectively copper source and source of iron, with dehydrated alcohol (CH3CH2OH) it is
Solvent, stirs under room temperature and clarifies to solution, it hydrolyzes 24h at normal temperatures and pressures, prepare CuFeO2Precursor sol is standby.Adopt
By dipping-pulling method CuFeO2Presoma is coated on ITO electro-conductive glass: by the ITO electro-conductive glass that cleans up with 5mm/s
Speed at CuFeO2Lift with the speed of 5mm/s again after precursor sol impregnating and stopping 20s, put in baking oven at 80 DEG C
Lower dry；Then carry out repeating plated film, the ITO electro-conductive glass completing secondary film coating is placed in 80 DEG C of baking ovens and is dried 1h.Will be dry
CuFeO after dry2Thin film is placed in Muffle furnace and makes annealing treatment with 2 DEG C/min when 550 DEG C, naturally cools to after insulation 2h
Room temperature, obtains CuFeO2Nano material.
The above, the only present invention preferably detailed description of the invention, but protection scope of the present invention is not limited thereto,
Any those familiar with the art in the technical scope that the invention discloses, the change that can readily occur in or replacement,
All should contain within protection scope of the present invention.Therefore, protection scope of the present invention should be with scope of the claims
It is as the criterion.
Claims (4)
1. the CuFeO for photoelectrocatalysis2The preparation method of nano material, it is characterised in that first by sol-gal process
Preparation CuFeO2Presoma, then uses dipping-czochralski process to complete plated film on ITO electro-conductive glass, is dried through drying baker
Afterwards, put into Muffle furnace and make annealing treatment, and then obtain nanometer CuFeO2Thin film.
CuFeO for photoelectrocatalysis the most according to claim 12The preparation method of nano material, it is characterised in that join
Make described CuFeO2The technological parameter of precursor sol is: first by Schweinfurt green (Cu (CH3COOH)2·H2And ferric nitrate (Fe O)
(NO3)3·9H2O) dehydrated alcohol (CH is added to according to the ratio of mol ratio 1:13CH2OH), in, stir to solution clear under room temperature
Clearly, it is hydrolyzed at normal temperatures and pressures 24～72h, prepare CuFeO2Precursor sol is standby, described CuFeO2Precursor sol
Concentration is 0.2～0.5mol/L.
CuFeO for photoelectrocatalysis the most according to claim 12The preparation method of nano material, it is characterised in that system
Standby described CuFeO2The technological parameter of thin film is: by the ITO electro-conductive glass that cleans up with 1～5mm/s speed at CuFeO2Before
Drive in body colloidal sol after Best-Effort request, put in 80 DEG C of baking ovens and be dried；Then carry out repeating plated film, the ITO of secondary film coating will be completed
Electro-conductive glass is placed in 80 DEG C of baking ovens and is dried 1～4h.
CuFeO for photoelectrocatalysis the most according to claim 12The preparation method of nano material, it is characterised in that system
Standby described CuFeO2The technological parameter of nano material is: by dried CuFeO2Thin film is placed in Muffle furnace when 550 DEG C with 2
DEG C/min makes annealing treatment, naturally cool to room temperature after insulation 2h, obtain CuFeO2Nano material.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107297207A (en) * | 2017-06-23 | 2017-10-27 | 上海交通大学 | A kind of CuFe02Carbon nanotube nanocomposite and its synthetic method |
| CN107574455A (en) * | 2017-09-15 | 2018-01-12 | 北京化工大学 | It is a kind of to mix Li CuFeO2By CO on semi-conducting electrode2The method of reduction |
| CN107620089A (en) * | 2017-09-15 | 2018-01-23 | 北京化工大学 | One kind is in CuFeO2/CuInS2By CO on composite semiconductor filmses electrode2It is reduced to the method for methanol |
| CN108531939A (en) * | 2018-04-11 | 2018-09-14 | 苏州工业职业技术学院 | Pt modifies Fe2O3Wrap up CuFeO2Photocathode and preparation method |
| CN108906051A (en) * | 2018-06-25 | 2018-11-30 | 广东工业大学 | A kind of delafossite structure CuFeO2Powder and its preparation method and application |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10244163A (en) * | 1997-03-04 | 1998-09-14 | Nikon Corp | Photocatalyst having catalytic activity in visible light range |
| CN104058461A (en) * | 2014-07-04 | 2014-09-24 | 武汉理工大学 | Low-temperature preparation method for CuFeO2 crystal material of delafossite structure |
| CN104860356A (en) * | 2015-04-29 | 2015-08-26 | 新疆大学 | Preparation method for synthesizing CuFeO2 powder by using hydrothermal method |
-
2016
- 2016-09-20 CN CN201610838256.9A patent/CN106268813A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10244163A (en) * | 1997-03-04 | 1998-09-14 | Nikon Corp | Photocatalyst having catalytic activity in visible light range |
| CN104058461A (en) * | 2014-07-04 | 2014-09-24 | 武汉理工大学 | Low-temperature preparation method for CuFeO2 crystal material of delafossite structure |
| CN104860356A (en) * | 2015-04-29 | 2015-08-26 | 新疆大学 | Preparation method for synthesizing CuFeO2 powder by using hydrothermal method |
Non-Patent Citations (1)
| Title |
|---|
| HIROYUKI NASU等: "Preparation and properties of Sol–Gel derived CuFeO2 thin films by dip-coating technique", 《JOURNAL OF THE CERAMIC SOCIETY OF JAPAN》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107297207A (en) * | 2017-06-23 | 2017-10-27 | 上海交通大学 | A kind of CuFe02Carbon nanotube nanocomposite and its synthetic method |
| CN107297207B (en) * | 2017-06-23 | 2019-05-03 | 上海交通大学 | A kind of CuFeO2Carbon nanotube nanocomposite and its synthetic method |
| CN107574455A (en) * | 2017-09-15 | 2018-01-12 | 北京化工大学 | It is a kind of to mix Li CuFeO2By CO on semi-conducting electrode2The method of reduction |
| CN107620089A (en) * | 2017-09-15 | 2018-01-23 | 北京化工大学 | One kind is in CuFeO2/CuInS2By CO on composite semiconductor filmses electrode2It is reduced to the method for methanol |
| CN108531939A (en) * | 2018-04-11 | 2018-09-14 | 苏州工业职业技术学院 | Pt modifies Fe2O3Wrap up CuFeO2Photocathode and preparation method |
| CN108906051A (en) * | 2018-06-25 | 2018-11-30 | 广东工业大学 | A kind of delafossite structure CuFeO2Powder and its preparation method and application |
| CN108906051B (en) * | 2018-06-25 | 2020-12-08 | 广东工业大学 | CuFeO with delafossite structure2Powder, method for the production thereof and use thereof |
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