CN106256924A - Precipitation equipment - Google Patents

Precipitation equipment Download PDF

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Publication number
CN106256924A
CN106256924A CN201610073177.3A CN201610073177A CN106256924A CN 106256924 A CN106256924 A CN 106256924A CN 201610073177 A CN201610073177 A CN 201610073177A CN 106256924 A CN106256924 A CN 106256924A
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CN
China
Prior art keywords
sedimentary origin
region
catcher
standby region
chamber
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610073177.3A
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Chinese (zh)
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CN106256924B (en
Inventor
罗兴烈
李明基
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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Publication of CN106256924A publication Critical patent/CN106256924A/en
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Publication of CN106256924B publication Critical patent/CN106256924B/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Precipitation equipment includes chamber, sedimentary origin, plural angle limits plate and catcher, wherein, chamber provides inside it for substrate, and chamber includes the deposition region performing depositing operation over the substrate and is arranged at the standby region at least side of described deposition region, sedimentary origin is arranged at described chamber interior and discharges deposition material, plural angle limits plate is arranged to emission direction angle that is adjacent with described sedimentary origin and that limit described deposition material, catcher covers the top of described sedimentary origin and traps the unnecessary deposition material not depositing on described substrate.Described catcher is arranged at described standby region.

Description

Precipitation equipment
Technical field
The present invention relates to precipitation equipment, in particular it relates to for the precipitation equipment manufacturing display device.
Background technology
Organic electroluminescence display device and method of manufacturing same is as self-luminous display device, and it not only has wide viewing angle and outstanding contrast Degree, but also there is the advantage of fast response time, therefore get most of the attention as display device of future generation.
The organic electroluminescence device being arranged in organic electroluminescence display device and method of manufacturing same by two electrodes relative to each other with And the intermediate layer being formed between described electrode is constituted, and can be provided with various layer in described intermediate layer, such as, various layers can For hole injection layer, hole transmission layer, luminescent layer, electron transfer layer or electron injecting layer etc..
When manufacturing the organic electroluminescence device with configuration as described above, the described hole being formed on substrate is injected Thin film or the electrode of layer, described hole transmission layer, described luminescent layer, described electron transfer layer or described electron injecting layer etc. can Formed by deposition (deposition) method using precipitation equipment.
Summary of the invention
It is an object of the invention to provide the precipitation equipment of the loss reducing deposition material to greatest extent.
Precipitation equipment according to an embodiment of the present invention include chamber, sedimentary origin, plural angle limits plate with And catcher, wherein, chamber provides inside it for substrate, and chamber includes performing the heavy of depositing operation over the substrate Long-pending region and be arranged at the standby region at least side of described deposition region, sedimentary origin be arranged at described chamber interior and Discharge deposition material, plural angle limits plate is arranged to adjacent with described sedimentary origin and limits described deposition material Emission direction angle, catcher covers the top of described sedimentary origin and traps the unnecessary deposition not depositing on described substrate Material.Described catcher is arranged at described standby region.
In an embodiment of the present invention, described catcher can include covering part and sidewall, and wherein, covering part is in the face of described Sedimentary origin, sidewall is upwardly extending towards the side of described sedimentary origin from described covering part.Described sidewall may be disposed to and described angle It is corresponding that degree limits plate.
In an embodiment of the present invention, described sedimentary origin may be configured as multiple and the most arranged side by side.
In an embodiment of the present invention, described angle limits plate may be disposed between described sedimentary origin adjacent one another are with And at the both ends in the orientation of described sedimentary origin.
In an embodiment of the present invention, the height of described angle limits plate all can be identical, or described angle limits plate In at least one can have the height different from the height of other angle limits plates.Described sidewall can be with described angle limits plate One_to_one corresponding, and each sidewall may be disposed at corresponding all angles and limits the top of plate.In this case, every pair that The height sum of this corresponding angle limits plate and sidewall can be equal.
In an embodiment of the present invention, described precipitation equipment may also include the mobile dress making described catcher vertically move Put.
In an embodiment of the present invention, described catcher may be configured as multiple.
In an embodiment of the present invention, described standby region includes the first standby district arranged across described deposition region Territory and the second standby region, described sedimentary origin can move through described deposition region from described first standby region to described Two standby regions.Described catcher can include the first catcher being arranged at described first standby region and be arranged at described second Second catcher in standby region.
In an embodiment of the present invention, described chamber can include the first chamber disposed adjacent one another and the second chamber, Described first chamber can include the standby region of the most adjacently positioned first, the first deposition region and the second standby region, described Second chamber can include the standby region of the most adjacently positioned first, the second deposition region and the second standby region.Described first Chamber and described second chamber may also include and be arranged at the second standby region of described first chamber and treating of described second chamber Wobble area between machine region, described first chamber and described second chamber can share described wobble area.Now, deposition dress Put described catcher and may also include the 3rd catcher being arranged at described wobble area.
In an embodiment of the present invention, described precipitation equipment may also include and attaches to described catcher with to described trapping Device carries out the cooler cooled down.
In an embodiment of the present invention, the upper surface of described precipitation equipment can be mesh shape.
Accompanying drawing explanation
Fig. 1 is the plane graph of the structure schematically showing precipitation equipment according to an embodiment of the present invention.
Fig. 2 is the knot schematically showing precipitation equipment according to an embodiment of the present invention along the mobile route of sedimentary origin The sectional view of structure.
Fig. 3 is the sedimentary origin in the component schematically showing precipitation equipment according to an embodiment of the present invention, angle Limit plate and the axonometric chart of the first catcher.
Fig. 4 is the plane graph of the part schematically showing depositing system, and wherein, this depositing system is provided with according to this The precipitation equipment of bright embodiment is as deposition portion.
Detailed description of the invention
The present invention can implement various deformation and can have various form, and particular implementation shown in the drawings And particular implementation is described in detail in the description.However, it is understood that this is not intended as limiting the invention to specific public affairs Open form state, but include all changes, equivalent and the substitute included in the thought of the present invention and technical scope.
When each accompanying drawing is described, similar reference is for similar element.In the accompanying drawings, for the present invention Definition, the size of works than actual size amplify illustrate.Although the wording of first, second grade can be used for multiple structure is described Become key element, but described element is not limited by described wording.Described wording be only used for by an element and other Element distinguishes.Such as, in the case of without departing substantially from the interest field of the present invention, the first element can be described as the second structure Becoming key element, similarly, the second element is alternatively referred to as the first element.Unless context separately has clear and definite referring on the contrary Showing, otherwise singular references includes plural number statement.
Should be understood that in this application, the instruction such as the wording of " including " or " having " etc. feature described in description, numeral, The existence of step, action, element, parts or combinations thereof rather than get rid of other features one or more, number in advance The existence or additional of word, step, action, element, parts or combinations thereof.
Next, with reference to accompanying drawing, the preferred embodiment for the present invention is described in more details.
Fig. 1 is the plane graph of the structure schematically showing precipitation equipment according to an embodiment of the present invention.Fig. 2 be along The mobile route of sedimentary origin schematically shows the sectional view of the structure of precipitation equipment according to an embodiment of the present invention.Fig. 3 is Schematically show sedimentary origin, angle limits plate and in the element of precipitation equipment according to an embodiment of the present invention The axonometric chart of one catcher.
Referring to figs. 1 through Fig. 3, include making substrate (such as, the first substrate S UB1 according to the precipitation equipment of embodiment of the present invention With the second substrate S UB2) provide to its internal cavity C HM, be arranged on the sedimentary origin SC described cavity C HM within and described sink Angle limits plate (such as, the first angle limits plate AC1, the second angle limits plate AC2 and the third angle that long-pending source SC is disposed adjacent to Degree limits AC3) and be arranged on catcher above described sedimentary origin SC (such as, the first catcher CLT1, CLT1', second Catcher CLT2, CLT2' and the 3rd catcher CLT3).
Described precipitation equipment is to utilize to be deposited on substrate the device forming thin film.
Described substrate is arranged to tabular.Which kind of device described substrate can form and by various material structures according to surface thereon Become.Such as, can be by insulating properties materials such as glass, quartz, plastics in the case of described substrate surface configuration display device thereon Constitute.Or, can be the wafer being made up of silicon in the case of described substrate surface configuration memory device thereon.
Described cavity C HM is to perform the space of film-forming process over the substrate.
Described cavity C HM may be configured as single, it is possible to is set to multiple as shown in fig. 1.Each cavity C HM can provide There is described substrate to perform film-forming process over the substrate.
Such as, Fig. 2 shows that described cavity C HM includes the first cavity C HM1 adjacent one another are and the second cavity C HM2, its Described in the first cavity C HM1 be provided with in the first substrate S UB1 and described second cavity C HM2 be provided with the second substrate SUB2.Below, by an embodiment of the present invention has adjacent one another are two cavity C HM1, the example of CHM2 is said Bright.
Described first cavity C HM1 and described second cavity C HM2 are respectively at described first substrate S UB1 and the second substrate The upper space performing film-forming process of SUB2.Described first cavity C HM1 and described second cavity C HM2 can be connected to vacuum pump (not shown), and available described vacuum pump makes described first cavity C HM1 and the respective internal dimension of described second cavity C HM2 Hold vacuum.
Described first cavity C HM1 and described second cavity C HM2 each include the most substantially performing to sink Amass the deposition region of technique and be arranged at the standby region at least side of described deposition region.Such as, described first chamber Room CHM1 includes the first deposition region DPA1, the first standby region WTA1 and the second standby region WTA2, wherein, the first crystallizing field Territory DPA1 provides to wherein and perform the depositing operation for described first substrate S UB1 for described first substrate S UB1, and first Standby region WTA1 is arranged at the side of described first deposition region DPA1, and the second standby region WTA2 is arranged at described At first deposition region DPA1 opposite side.Described second cavity C HM2 includes the second deposition region DPA2, the first standby region WTA1' and the second standby region WTA2', wherein, the second deposition region DPA2 provides to the most also for described second substrate S UB2 And performing the depositing operation for described second substrate S UB2, the first standby region WTA1' is arranged at described second deposition region At the side of DPA2, and the second standby region WTA2' is arranged at the opposite side of described second deposition region DPA2.
Described first cavity C HM1 and described second cavity C HM2 also include being arranged at the second of described first cavity C HM1 Wobble area SWZ between standby region WTA2 and the second standby region WTA2' of described second cavity C HM2.Described first chamber Room CHM1 and described second cavity C HM2 share described wobble area SWZ.
Described sedimentary origin SC will deposit material and provide to described substrate.Described sedimentary origin SC includes body BD and at least Individual nozzle, wherein, body BD accommodates described deposition material therein, and at least one arrangement of nozzles with described substrate phase To described body BD on and on the direction towards described substrate discharge deposition material.
As long as described body BD can accommodate deposition material, not by particular determination, such as, described body BD can be by Ceramic material is formed.The outside of described body BD is also provided with for heating described deposition material so that described deposition material Vaporization or the heater of distillation.
Described nozzle sprays the deposition material within described body BD on the direction towards described substrate.Described nozzle can Described body BD is set to multiple, and can have various shape and arrangement.An embodiment of the present invention discloses The most linearly aligned example.
In an embodiment of the present invention, described sedimentary origin SC may be configured as only one, it is possible to is set to multiple.Described If using various deposition material, the most described sedimentary origin SC to may be configured as two or more when depositing thin film on substrate.The plurality of Sedimentary origin SC can be arranged side by side.Fig. 3 shows in the example that two sedimentary origin SC are disposed side by side, and sedimentary origin SC It is respectively arranged with first jet NZ1 and second nozzle NZ2.
Being provided with mobile device MM in described sedimentary origin SC, wherein, mobile device MM is in described cavity C HM and two Between individual adjacent chamber (such as CHM1, CHM2) mobile as described in sedimentary origin SC.
In an embodiment of the present invention, described sedimentary origin SC can sink via described first in described first cavity C HM1 Long-pending region DPA1 moves between described first standby region WTA1 and described second standby region WTA2.When connecting institute The path stating the first standby region WTA1, described first deposition region DPA1 and described second standby region WTA2 is referred to as the first via During the PTH1 of footpath, described sedimentary origin SC can move along described first path PTH1.When not in described first substrate S UB1 When performing film-forming process, described sedimentary origin SC is positioned at described first standby region WTA1 or described second standby region WTA2.When In described first substrate S UB1 perform film-forming process time, described sedimentary origin SC can in described first deposition region DPA1 along Described first path PTH1 is travelled to and fro between the position corresponding with the two ends of described first substrate S UB1 for many times and is served as a contrast to described first End SUB1 provides deposited material.Herein, in order to ensure the uniformity of the thin film deposited in described first substrate S UB1 (uniformity), described sedimentary origin SC can pass through after completely disengaging from the end of described first substrate S UB1 again with on the contrary The mode advanced in direction carries out back and forth movement.
Described sedimentary origin SC can move to described second cavity C HM2 after the depositing operation of described first cavity C HM1. Described sedimentary origin SC and can move to described through wobble area SWZ from the standby region WTA2 of the second of described first cavity C HM1 Second standby region WTA2' of the second cavity C HM2.When connecting the second standby region WTA2 of described first cavity C HM1, institute The path of the described second standby region WTA2' stating wobble area SWZ and described second cavity C HM2 is referred to as the second path P TH2 Time, described sedimentary origin SC can move along described second path P TH2.Although described in an embodiment of the present invention The shape of two path P TH2 is shown as straight line, but is not limited to this, the second tunnel described in other embodiments of the present invention The shape of footpath PTH2 can be curve, such as, arc.
The mobile sedimentary origin SC to described second cavity C HM2 can be via described second deposition region DPA2 described second Move between the second standby region WTA2' and the first standby region WTA1' of cavity C HM2.When treating described for connection first The path of machine region WTA1', described second deposition region DPA2 and described second standby region WTA2' is referred to as the 3rd path P TH3 Time, described sedimentary origin SC can move along described 3rd path P TH3.
Identical with the situation in described first cavity C HM1, when not performing film-forming process in described second substrate S UB2 Time, described sedimentary origin SC is positioned at described first standby region WTA1' or described second standby region WTA2', when described second When performing film-forming process in substrate S UB2, described sedimentary origin SC can be along described 3rd tunnel in described second deposition region DPA2 Footpath PTH3 travels to and fro between the position corresponding with the two ends of described second substrate S UB2 for many times and provides to described second substrate S UB2 Deposited material.
Described substrate and described sedimentary origin SC are arranged opposed to one another and are spaced.
Although in an embodiment of the present invention explanation for described sedimentary origin SC by described mobile device move same Shi Zhihang deposits, but is not limited to this.Deposition can be performed while described sedimentary origin SC and described substrate move relative to each other Technique.That is, deposition can be performed at fixing described substrate and while only making described sedimentary origin SC motion, or can be by institute Perform deposition while stating in sedimentary origin SC is arranged in described deposition region and making described substrate motion, or can make Described sedimentary origin SC and described substrate perform deposition while all moving.
Additionally, the position of described substrate and described sedimentary origin SC can be arranged in a different manner according to direction.That is, at this In a bright embodiment, as in figure 2 it is shown, described substrate and described sedimentary origin SC may be arranged on vertical direction, and in the present invention In other embodiments, described substrate and described sedimentary origin may be arranged in horizontal direction or on other directions.
Described angle limits plate is arranged to adjacent with described sedimentary origin SC.Described angle limits plate such as may be provided at each other At both ends between adjacent described sedimentary origin SC and on the bearing of trend of described sedimentary origin SC.Described angle limits plate limits Make the emission direction angle of described deposition material.
Described angle limits plate may be arranged at the both sides of the described nozzle on described sedimentary origin SC, and in described deposition When source SC is set to multiple, can share each other in both sides and be arranged at the angle limits plate between sedimentary origin SC adjacent one another are.
Described angle limits plate can include that the first angle limits plate AC1 limits plate AC3 to third angle.Described first angle Limit plate AC1 and described third angle limits plate AC3 and is arranged in the outside of described sedimentary origin SC, described second angle limits plate AC2 is arranged between two sedimentary origin SC.In other words, it is provided with the first angle limits plate at the both sides of described first jet NZ1 AC1 and the second angle limits plate AC2, and at the both sides of described second nozzle NZ2, it is provided with the second angle limits plate AC2 and the 3rd Angle limits plate AC3.
Described deposition material is not to fly out with straight line on emission direction, but towards front on emission direction Sent forth in the way of large area diffusion.Therefore, the rotation angle of the described deposition material discharged can be the two of described nozzle At side, the height according to described angle limits plate limits.
Described angle limits plate may be arranged on upper surface relative with described substrate in the body BD of described sedimentary origin SC.
Described angle limits plate has the predetermined altitude extended from the upper surface of described body BD.The present invention one embodiment party In formula, described angle limits plate can have mutually the same height.
In an embodiment of the present invention, described angle limits plate can not have mutually the same height.Such as, described angle At least one in degree restriction plate can have the height different from the height of other angle limits plates.
Limit in plate AC3 at described first angle limits plate AC1 to third angle, described first angle limits plate AC1 and Described third angle limits plate AC3 can have identical height, and described second angle limits plate AC2 can have ratio described first Angle limits plate AC1 and described third angle limit the height that the height of plate AC3 is little.In an embodiment of the present invention, described The height that first angle limits plate AC1 limits plate AC3 to third angle is not limited to this, and may also set up to be different from this.
Described angle limits plate can be corresponding with the orientation of described nozzle and can with described orientation abreast Extend.
Described catcher does not deposits to the unnecessary deposition material on described substrate for trapping, and it may be disposed at each chamber The standby region of room.Described catcher for greatest extent reduce deposition material loss, its cover described sedimentary origin SC and Above described angle limits plate.
Described catcher can be provided with the mobile device making described catcher vertically move.As described sedimentary origin SC Moving to deposition region not when standby region or wobble area, described catcher is movable to original position, i.e. permissible Upward direction moves.
Described catcher may be configured as multiple.In an embodiment of the present invention, the first of described first cavity C HM1 is treated Machine region WTA1 can be provided with the first catcher CLT1, and can in the first standby region WTA1' of described second cavity C HM2 It is provided with the first catcher CLT1'.Catch additionally, the second standby region WTA2 of described first cavity C HM1 can be provided with second Storage CLT2, and the second standby region WTA2' of described second cavity C HM2 can be provided with the second catcher CLT2'.Arrange Between the second standby region WTA2 and the second standby region WTA2' of described second cavity C HM2 of described first cavity C HM1 Wobble area SWZ in can be provided with the 3rd catcher CLT3.
Described first to the 3rd catcher CLT1, CLT1', CLT2, CLT2', CLT3 has the structure being substantially the same, and And hereinafter by with reference to Fig. 3 to the first catcher in the be arranged at described first cavity C HM1 first standby region WTA1 CLT1 illustrates.
Described first to the 3rd catcher CLT1, CLT2, CLT3 has the structure being substantially the same, therefore, and below will ginseng According to Fig. 3, the first catcher CLT1 is illustrated.
Described first catcher CLT1 includes covering part CV and sidewall, and wherein, covering part CV is in described sedimentary origin SC Be disposed with first jet NZ1 and the upper surface of second nozzle NZ2, sidewall from described covering part CV towards described sedimentary origin SC's Side upwardly extends.
Described covering part CV is spaced with described sedimentary origin SC and described angle limits plate.Described covering part CV can be set to The most parallel with the upper surface of described sedimentary origin SC, but it is not limited to this.
Described sidewall is upwardly extending towards the side of described sedimentary origin SC from described covering part CV.Described sidewall and described angle Degree limits plate one_to_one corresponding.That is, the quantity of described sidewall is identical with the quantity of described angle limits plate, the position of each sidewall with The location matches of the most corresponding angle limits plate is also disposed in the top of angle limits plate.
In an embodiment of the present invention, described sidewall can include the first side wall WL1, the second sidewall WL2 and the 3rd sidewall WL3.Described the first side wall WL1 corresponds to the second angle corresponding to described first angle limits plate AC1, described second sidewall WL2 Limit plate AC2, and described 3rd sidewall WL3 limits plate AC3 corresponding to described third angle.Described first to the 3rd sidewall WL1, WL2, WL3 are formed as having the most relative with the height of described first angle limits plate AC1 to third angle restriction plate AC3 Height.Such as, in the embodiment of Fig. 3 of the height minimum of the second angle limits plate AC2, corresponding to described second angle The height of the second sidewall WL2 limiting plate AC2 is maximum.Thus, the height of described first angle limits plate AC1 and the first side wall WL1 Degree sum, the height sum of described second angle limits plate AC2 and described second sidewall WL2 and described third angle limit The height sum of plate AC3 and the 3rd sidewall WL3 all can be identical.
When described sedimentary origin SC is positioned at the first standby region WTA1' and the second standby region of described first cavity C HM1 During WTA2', described first catcher CLT1 is in downward direction to move and to cover the top of described sedimentary origin SC.Now, described One to the 3rd sidewall WL1, WL2, WL3 limits plate AC1, AC2, AC3 with corresponding the first to third angle and contacts and close institute State the upper space of sedimentary origin SC, so that the deposition material from described sedimentary origin SC radiation will not leak into the first chamber CHM1.Thus, the deposit material of described radiation is on the lower surface of described first catcher CLT1.
Described second catcher CLT2 and described 3rd catcher CLT3 also by identical mode in described wobble area Trapping deposition material in SWZ and described second cavity C HM2.
In the case of precipitation equipment according to an embodiment of the present invention, can be by the trapping of described catcher in the past not Perform the deposition material being dropped during depositing operation.Described deposition material can be recovered and reuse in depositing operation. Additionally, reduced the mixing of deposition material different from each other to greatest extent by each sidewall of described catcher.
In an embodiment of the present invention, will disappear when described substrate being loaded to precipitation equipment and it being alignd The consumption scheduled time, therefore by arranging multiple chambers, can be by loading in a side cavity and during the substrate that aligns at another Side cavity performs the mode of deposition to reduce stand-by time.In this case it can also happen that the material swung in district damages Lose, but according to an embodiment of the present invention, reduce wobble area to greatest extent by arranging catcher in wobble area In material unaccounted-for (MUF).
Although show in an embodiment of the present invention described catcher be arranged on each chamber standby region and Wobble area, but the position that arranges of described catcher is not limited to this.Described catcher also can be additionally provided on described heavy The position of the direction of motion is changed, i.e. at the steering position of sedimentary origin during in long-pending region, sedimentary origin back and forth movement.
In an embodiment of the present invention, described catcher may also include the cooling cooling down described catcher Device.Described catcher is maintained the temperature lower than the temperature in described chamber by described cooler, so that in described chamber Deposition material be easily captured.
In an embodiment of the present invention, in described catcher, the surface in the face of described sedimentary origin can have netted (mesh) Shape.In the case of the surface of described catcher is mesh shape, deposited material more can will be easily attached to described trapping Device.
Fig. 4 schematically shows the plane graph of a part for depositing system, and wherein, this depositing system is provided with according to the present invention The precipitation equipment of embodiment is as deposition portion.Herein, the depositing system of Fig. 4 uses the precipitation equipment shown in Fig. 1 to Fig. 3.
With reference to Fig. 4, according to the depositing system DPD of embodiment of the present invention be configured to include deposition portion, transfer chamber and Dress lock chamber LDC1, LDC2 bunch (cluster) form, wherein, deposition portion include perform depositing operation multiple cavity C HM, CHM', transfer chamber commonly connects the plurality of cavity C HM, CHM', and fills lock chamber LDC1, LDC2 to by described turn Move chamber to perform to load and/or unloading to described cavity C HM, the internal substrate put into of CHM'.Additionally, the one of described transfer chamber Shadow mask cell S MU can be additionally provided with, wherein, when shadow mask cell S MU is provided with depositing operation in the cavity at side The shadow mask used.
Described deposition portion is as carrying out the place of depositing operation, and it can include two substrate S UB1, SUB2 are performed deposition Cavity C HM of technique and cavity C HM' to a substrate S UB3 execution depositing operation.For described deposition portion, chamber Composition be not limited to this, it is also possible to be only made up of the chamber that two substrates are performed depositing operations.
Described transfer chamber includes having the body BDP in the transfer space for transferring substrate and be arranged at described Mechanical arm RBA in body BDP.The substrate arranged in dress lock chamber LDC1, LDC2 is transplanted on chamber by described mechanical arm RBA CHM, CHM', or by performed by cavity C HM, CHM' deposition substrate transfer and be returned to other cavity C HM, CHM' or Dress lock chamber LDC1, LDC2.Described mechanical arm RBA may be configured as multiple (such as, two), and available described mechanical arm is same Time transfer multiple substrate.
Described dress lock chamber LDC1, LDC2 substrate to putting within described depositing system DPD performs to load and/or unload Carry.
Additionally, described transfer chamber is connected with cavity C HM, CHM', dress lock chamber LDC1, LDC2 and shadow mask cell S MU. Now, each cavity C HM described, CHM' are provided with the breakthrough part come in and gone out for substrate.
The depositing system of bunch form according to embodiment of the present invention is embodied as the polygon that the length of chamber is different from each other Barrel-shaped state, therefore, compared to existing depositing system, it is possible to reduce the area shared by described depositing system.Additionally, due to arrange There is multiple chamber, therefore there is the advantage that can simultaneously process multiple substrate.
Independent deposition material can be deposited on substrate by each chamber as above respectively, it is possible to by identical material Deposit on substrate.
Although being illustrated above with reference to the preferred embodiment for the present invention, but the technical field of the invention Practitioner or those skilled in the art should be understood that the present invention can carry out various modifications and changes, Thought and technical field without departing from the present invention described in appended claims.
Therefore, the technical scope of the present invention should be limited only by the claims rather than by description specifically Content described in bright limits.
Description of reference numerals
AC1, AC2, AC3: first, second, third angle limits plate
BD: body CHM1, CHM2: first, second chamber
CLT1, CLT1': first catcher CLT2, CLT2': the second catcher
CLT3: the three catcher SC: sedimentary origin
CV: covering part DPA1, DPA2: first, second deposition region
PTH1, PTH2, PTH3: first, second, third path
SUB1, SUB2: first, second substrate
SWZ: wobble area
WL1, WL2, WL3: first, second, third sidewall
WTA1, WTA1': the first standby region
WTA2, WTA2': the second standby region

Claims (10)

1. a precipitation equipment, including:
Chamber, described chamber provides inside it for substrate, and includes the crystallizing field performing depositing operation over the substrate Territory and be arranged at the standby region at least side of described deposition region;
Sedimentary origin, described sedimentary origin is arranged at described chamber interior and discharges deposition material;
Plural angle limits plate, angle limits plate more than said two is arranged to adjacent with described sedimentary origin and limits Make the emission direction angle of described deposition material;And
Catcher, described catcher covers the top of described sedimentary origin and traps unnecessary the sinking not depositing on described substrate Long-pending material,
Wherein, described catcher is arranged at described standby region.
2. precipitation equipment as claimed in claim 1, wherein, described catcher includes:
Covering part, described covering part is in the face of described sedimentary origin;And
Sidewall, described sidewall is upwardly extending towards the side of described sedimentary origin from described covering part,
Wherein, described sidewall is arranged to corresponding with described angle limits plate.
3. precipitation equipment as claimed in claim 2, wherein, described sedimentary origin is set to multiple and the most arranged side by side.
4. precipitation equipment as claimed in claim 3, wherein, described angle limits plate is arranged at described sedimentary origin adjacent one another are Between and the orientation of described sedimentary origin on both ends at.
5. precipitation equipment as claimed in claim 3, at least one in wherein said angle limits plate has and other angles Limit the height that the height of plate is different from each other.
6. precipitation equipment as claimed in claim 5, wherein, described sidewall and described angle limits plate one_to_one corresponding, and respectively Individual sidewall is arranged at corresponding all angles and limits the top of plate.
7. precipitation equipment as claimed in claim 6, wherein, the height of the angle limits plate that every pair corresponds to each other and sidewall it With equal.
8. precipitation equipment as claimed in claim 1, wherein, described standby region include arranging across described deposition region the One standby region and the second standby region, described sedimentary origin can move through described deposition region from described first standby region To described second standby region.
9. precipitation equipment as claimed in claim 8, wherein, described catcher includes:
First catcher, is arranged at described first standby region;And
Second catcher, is arranged at described second standby region.
10. precipitation equipment as claimed in claim 9, wherein,
Described chamber includes the first chamber disposed adjacent one another and the second chamber,
Described first chamber includes the standby region of the most adjacently positioned first, the first deposition region and the second standby region,
Described second chamber includes the standby region of the most adjacently positioned first, the second deposition region and the second standby region.
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