CN106255277A - The method improving OLED luminous efficiency based on drive circuit - Google Patents
The method improving OLED luminous efficiency based on drive circuit Download PDFInfo
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- CN106255277A CN106255277A CN201610866089.9A CN201610866089A CN106255277A CN 106255277 A CN106255277 A CN 106255277A CN 201610866089 A CN201610866089 A CN 201610866089A CN 106255277 A CN106255277 A CN 106255277A
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- drive circuit
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/60—Circuit arrangements for operating LEDs comprising organic material, e.g. for operating organic light-emitting diodes [OLED] or polymer light-emitting diodes [PLED]
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Abstract
The present invention relates to a kind of method improving OLED luminous efficiency based on drive circuit, one OLED is provided, described OLED includes upper electrode, electron injecting layer, electron transfer layer, organic luminous layer, hole transmission layer, hole injection layer and the bottom electrode arranged from top to bottom, the described extremely cathode material that powers on, described bottom electrode is anode material, it is characterized in that: arrange a power supply on described between electrode and bottom electrode, the output of described power supply makes the driving voltage that hole and electronics are combined at luminescent layer.The present invention makes carrier reach the balance injected at organic luminous layer, thus improves the luminous efficiency of OLED.
Description
Technical field
The present invention relates to a kind of method improving OLED luminous efficiency based on drive circuit.
Background technology
OLED, as the mainstream technology of current flat pannel display, has rich color, active illuminating, volume is little, thickness is thin, regard
Angular width, energy consumption be low and many prominent advantages such as fast response time, is one of the hot fields of current research, the either side of display
Face or illumination aspect has the most wide prospect, its structure generally: upper/lower electrode, electron injecting layer (EIL), electric transmission
Layer (ETL), hole injection layer (HIL), hole transmission layer (HTL) and organic luminous layer (EML).Under the most alive driving,
Hole and electronics are injected into organic material from positive pole and negative pole respectively, and hole and electronics meet in organic layer, are combined, release
Go out energy, transfer energy to the molecule of organic luminescent substance so that it is from ground state transition to excited state.Excited state is the most unstable,
Excited molecule returns to ground state from excited state, radiation transistion and produce luminescence phenomenon.In organic material, the mobility in hole exceeds
Electronics twice, owing to two kinds of carriers inject imbalance, carrier is relatively low at luminescent layer recombination probability ratio, thus affects device
Luminous efficiency.Carrier imbalance is to reduce one of principal element of device efficiency, the complexity injected due to carrier and
The difference of mobility, electronics and hole only part occurs compound at light emitting surface, and the most when the driver current is increasing, electric current is imitated
Rate occurs the phenomenon declined on the contrary.Too much carrier forms leakage current owing to being not engaged in compound directly through device.As
Really leakage current is excessive, can cause some heat effects, makes organic film easily crystallize, and the mobility of thin film and luminous efficiency all can be with
And decline, cause shorten device lifetime.Therefore the injection balance resolving carrier is improve device light emitting efficiency one
Important step.Currently mainly use cushion and barrier layer to improve the injection balance of hole and electronics, allow more carrier
Luminescent layer is combined.Cushion and barrier layer form thin film generally by the mode of thermal evaporation or spin coating, but hot
The complex process of evaporation, the molecule astaticism of evaporation, materials'use rate is the highest, and film forming thickness is uneven;And spin coating also can carry
Carry out stock utilization low, it is impossible to the shortcomings such as large area film forming.
Summary of the invention
In view of this, it is an object of the invention to provide a kind of method improving OLED luminous efficiency based on drive circuit,
Make carrier reach the balance injected at organic luminous layer, thus improve the luminous efficiency of OLED.
For achieving the above object, the present invention adopts the following technical scheme that a kind of based on drive circuit raising OLED luminescence effect
The method of rate a, it is provided that OLED, described OLED includes the upper electrode arranged from top to bottom, electron injecting layer, electron transfer layer, has
Machine luminescent layer, hole transmission layer, hole injection layer and bottom electrode, described in power on extremely cathode material, described bottom electrode is anode
Material, it is characterised in that: arranging a power supply on described between electrode and bottom electrode, the output of described power supply makes hole and electronics send out
The driving voltage that photosphere is compound.
Further, the waveform of described driving voltage includes square wave, sine wave, sawtooth waveforms, triangular wave, peaked wave and rank
Ladder ripple.
Further, described driving voltage is cut-in voltage, and scope is 1~20 V.
Further, described driving voltage accounts for the 20 ~ 49% of the cycle from bottom electrode to the upper electrode i.e. time of forward voltage,
Described driving voltage accounts for the 51 ~ 80% of the cycle from upper electrode to the bottom electrode i.e. time of backward voltage.
Further, the voltage U of described square wave0Between 3~12 V, dutycycle is 10%~50%.
Further, the forward voltage u of described sawtooth waveforms1Between 5~12V, backward voltage u2Between 3~5V.
The present invention compared with prior art has the advantages that the method for present invention drives changes carrier
Drift speed, the waveform exported by power supply can effectively be suppressed the drift speed in hole, reach hole and electronics organic
In luminescent layer the most compound, substantially increase the luminous efficiency of device, and traditional to prepare cushion and barrier layer etc. various thin
Film is compared, and the present invention is simpler, it is to avoid the waste of material.
Accompanying drawing explanation
Fig. 1 is OLED structure and the Carrier recombination schematic diagram of constant voltage.
Fig. 2 is the OLED structure under the specific driving voltage of the present invention and Carrier recombination schematic diagram.
Fig. 3 is the driving voltage of one embodiment of the invention.
Fig. 4 is the driving voltage of another embodiment of the present invention.
In figure: the upper electrode of 101-;102-electron injecting layer;103-electron transfer layer;104-bottom electrode;105-hole is injected
Layer;106-hole transmission layer;107-organic luminous layer;108-hole;109-electronics;110-power supply.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment the present invention will be further described.
Refer to upper electrode 101, electron injecting layer 102(EIL that Fig. 1, OLED include arranging from top to bottom), electric transmission
Layer 103(ETL), organic luminous layer 107(EML), hole transmission layer 106(HTL), hole injection layer 105(HIL) and bottom electrode
104;The described low workfunction metal such as extremely cathode material, usually Mg, Ag, Al, Ca that power on;Described bottom electrode is anode material
The metal-oxide that the electric conductivity such as material, usually ITO, IZO are good.Described electron injecting layer is usually by LiF, Cs2CO3、
K2SiO3Formed by the way of thermal evaporation Deng high-work-function metal;Electron transfer layer be the electron mobilities such as TRZ, TAZ, BCP relatively
High material is formed;Hole injection layer is that the materials such as CuPc, 2-TNATA, PEDOT:PSS are formed;Hole transmission layer be by NPB,
The material that the hole mobilities such as TPD are higher is formed.Under the blessing of constant voltage, a lot of holes 108 and electronics 109 are not
It is combined at organic luminous layer, greatly reduces luminous efficiency.
Refer to Fig. 2, be combined to improve hole and the effective of electronics, make two kinds of carriers (i.e. hole and electronics) have
Machine luminescent layer reaches the balance injected.The present invention provides a kind of method improving OLED luminous efficiency based on drive circuit, in institute
Stating and arrange a power supply 110 between electrode 101 and bottom electrode 104, the output of described power supply 110 makes hole 108 and electronics 109 in luminescence
The driving voltage of the specific waveforms that layer is compound, under the effect of electric field, hole 108 and electronics 109 are by certain electric field masterpiece
With, migrate from each functional layer, by regulating and controlling the driving voltage of positive pole so that hole obtains different electric field forces, from
And reach to control.
Further, the waveform of described driving voltage includes square wave, sine wave, sawtooth waveforms, triangular wave, peaked wave and rank
Ladder ripple.
Further, described driving voltage is cut-in voltage, and scope is 1~20 V.
Further, described driving voltage accounts for the 20 ~ 49% of the cycle from bottom electrode to the upper electrode i.e. time of forward voltage,
Described driving voltage accounts for the 51 ~ 80% of the cycle from upper electrode to the bottom electrode i.e. time of backward voltage.
In order to allow those skilled in the art be better understood from technical scheme, below in conjunction with specific embodiment to this
Bright describe in detail.
Embodiment one:
Refer to Fig. 3, a cycle T=t of this driving voltage1+ t2It is 1~10 us, on electrode material, first adds forward
Voltage, its voltage U0Between 3~12 V, under the effect of positive field, overflow respectively from electrode material in electronics and hole
Go out and migrate;Owing to the speed of electronics is less than hole, it will cause part carrier will not be combined in luminescent layer, for increasing
Big luminous efficiency, next plus a backward voltage, under the effect of electric field, its opposition is more than electronics, more greatly in hole
The speed inhibiting hole, make more carrier can be combined in luminescent layer, wherein dutycycle t1/ T is 10%~50%.
Embodiment two:
Refer to Fig. 4, a kind of zigzag impulse wave, u1For forward voltage, in the range from 5~12V, the time of effect is t1。u2
For backward voltage, in the range from 3~5V, the time of effect is t2-t1.Under the effect of forward voltage, hole and electronics are in function
Doing accelerated motion in Ceng, in organic layer, the rate of change of cavity speed is higher than electronics.For making carrier can reach in luminescent layer
Injection balance, then apply the backward voltage u that a time is2, hole its opposition under the effect of electric field is more than electronics,
The bigger speed inhibiting hole, makes more carrier can be combined in luminescent layer.
The foregoing is only presently preferred embodiments of the present invention, all impartial changes done according to scope of the present invention patent with
Modify, all should belong to the covering scope of the present invention.
Claims (6)
1. the method improving OLED luminous efficiency based on drive circuit a, it is provided that OLED, described OLED include from top to bottom
Upper electrode, electron injecting layer, electron transfer layer, organic luminous layer, hole transmission layer, hole injection layer and the bottom electrode arranged,
The described extremely cathode material that powers on, described bottom electrode is anode material, it is characterised in that: set between electrode and bottom electrode on described
Putting a power supply, the output of described power supply makes the driving voltage that hole and electronics are combined at luminescent layer.
The method improving OLED luminous efficiency based on drive circuit the most according to claim 1, it is characterised in that drive described in:
The waveform of galvanic electricity pressure includes square wave, sine wave, sawtooth waveforms, triangular wave, peaked wave and staircase waveform.
The method improving OLED luminous efficiency based on drive circuit the most according to claim 2, it is characterised in that drive described in:
Galvanic electricity pressure is cut-in voltage, and scope is 1~20 V.
The method improving OLED luminous efficiency based on drive circuit the most according to claim 2, it is characterised in that drive described in:
Galvanic electricity pressure accounts for the 20 ~ 49% of the cycle to the upper electrode i.e. time of forward voltage from bottom electrode, described driving voltage from upper electrode under
The electrode i.e. time of backward voltage accounts for the 51 ~ 80% of cycle.
The method improving OLED luminous efficiency based on drive circuit the most according to claim 2, it is characterised in that: described square
The voltage U of shape ripple0Between 3~12 V, dutycycle is 10%~50%.
The method improving OLED luminous efficiency based on drive circuit the most according to claim 2, it is characterised in that: described saw
The forward voltage u of tooth ripple1Between 5~12V, backward voltage u2Between 3~5V.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113451513A (en) * | 2020-03-24 | 2021-09-28 | 中国科学院化学研究所 | Ultra-low energy ion implantation method |
WO2024124469A1 (en) * | 2022-12-15 | 2024-06-20 | 京东方科技集团股份有限公司 | Display panel and display apparatus |
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US6023128A (en) * | 1995-05-22 | 2000-02-08 | Robert Bosch Gmbh | Electroluminescent layer arrangement with organic spacers joining clusters of nanomaterial |
CN1787056A (en) * | 2005-10-18 | 2006-06-14 | 电子科技大学 | AC driving circuit for organic electroluminescence display |
CN101911332A (en) * | 2007-12-28 | 2010-12-08 | 夏普株式会社 | Organic electroluminescent device |
CN101971385A (en) * | 2008-05-29 | 2011-02-09 | 欧司朗光电半导体有限公司 | Organic light emitting component and illumination means comprising a component of this type |
CN103682117A (en) * | 2013-12-31 | 2014-03-26 | 北京维信诺科技有限公司 | Organic light-emitting lighting device |
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2016
- 2016-09-30 CN CN201610866089.9A patent/CN106255277A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US6023128A (en) * | 1995-05-22 | 2000-02-08 | Robert Bosch Gmbh | Electroluminescent layer arrangement with organic spacers joining clusters of nanomaterial |
CN1787056A (en) * | 2005-10-18 | 2006-06-14 | 电子科技大学 | AC driving circuit for organic electroluminescence display |
CN101911332A (en) * | 2007-12-28 | 2010-12-08 | 夏普株式会社 | Organic electroluminescent device |
CN101971385A (en) * | 2008-05-29 | 2011-02-09 | 欧司朗光电半导体有限公司 | Organic light emitting component and illumination means comprising a component of this type |
CN103682117A (en) * | 2013-12-31 | 2014-03-26 | 北京维信诺科技有限公司 | Organic light-emitting lighting device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113451513A (en) * | 2020-03-24 | 2021-09-28 | 中国科学院化学研究所 | Ultra-low energy ion implantation method |
CN113451513B (en) * | 2020-03-24 | 2024-03-22 | 中国科学院化学研究所 | Ultra-low energy ion implantation method |
WO2024124469A1 (en) * | 2022-12-15 | 2024-06-20 | 京东方科技集团股份有限公司 | Display panel and display apparatus |
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Address after: 350301, Fujian, Fuzhou, Fuqing Province, 36 West Ring Road, National Chiao Tung economic and Technological Development Zone, Fuzhou University, Fuqing Institute Applicant after: Fuzhou University Address before: 350002 Fuzhou, Gulou District, Fujian Industrial Road, No. 523 Applicant before: Fuzhou University |
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