CN106252221A - Lithographic method - Google Patents
Lithographic method Download PDFInfo
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- CN106252221A CN106252221A CN201510325500.7A CN201510325500A CN106252221A CN 106252221 A CN106252221 A CN 106252221A CN 201510325500 A CN201510325500 A CN 201510325500A CN 106252221 A CN106252221 A CN 106252221A
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- Prior art keywords
- solution
- etching
- semiconductor substrate
- lithographic method
- acid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Abstract
The present invention provides a kind of lithographic method, comprises the steps: to provide Semiconductor substrate；Using the first solution that described Semiconductor substrate carries out first step etching, the first solution includes acid and hydrogen peroxide；Then using the second solution that described Semiconductor substrate carries out second step etching, the second solution includes phosphoric acid and potassium permanganate.Through the Semiconductor substrate of the lithographic method of the present invention, both can ensure that the groove that etching is formed had the most vertical width ratio, it is also possible to improve the uniformity on the surface formed after etching.
Description
Technical field
The present invention relates to semiconductor device processing technology field, particularly relate to a kind of lithographic method.
Background technology
Etching is an important process in semiconductor photoelectronic device preparation process, its objective is by physics or
The method of chemistry optionally removes material to form required table top or figure from wafers of semiconductor material surface.
Etching technics is divided into dry etching and wet etching two kinds.The pattern precision of dry etching and degree of anisotropy are all
Higher, and the controllability of parameters is preferable, but easily cause the etching injury of material, and dry etching equipment
Expensive；Wet etching has good repeatability, have simple to operate, etch rate is fast, nontoxic or low
The advantages such as malicious, good repeatability, but the performance such as controllability and pattern precision need to be by selecting suitable component
It is adjusted with the corrosive liquid of proportioning.
The wet etching liquid used the most both at home and abroad typically has phosphoric acid system, sulphuric acid system, Fluohydric acid. system etc., and
Etching liquid all be use hydrogen peroxide as oxidant, but, present inventor find, the chemistry of hydrogen peroxide
Character is unstable, it is easy to decompose, and can produce bubble at semiconductor surface thus affect etching in etching process
Uniformity, the flatness on the surface after reduction etching.
Summary of the invention
It is an object of the invention to, it is provided that a kind of lithographic method, it is ensured that the vertical wide ratio of groove after etching, change
Surface smoothness after kind Semiconductor substrate etching.
For solving above-mentioned technical problem, the present invention provides a kind of lithographic method, including:
Semiconductor substrate is provided；
Using the first solution that described Semiconductor substrate carries out first step etching, described first solution includes acid
And hydrogen peroxide；And
Using the second solution that described Semiconductor substrate carries out second step etching, described second solution includes phosphorus
Acid and potassium permanganate.
Optionally, described acid is phosphoric acid, sulphuric acid or Fluohydric acid..
Optionally, in described first solution, the volume shared by acid is 1/20～1/2, peroxidating in described first solution
Volume shared by hydrogen is 1/20～2/5.
Optionally, the etch period of described first step etching is 500s-1500s.
Optionally, described second solution is formulated with phosphoric acid solution by potassium permanganate solution, and potassium permanganate is molten
The volume of liquid is 5～10 times of the volume of phosphoric acid solution.
Optionally, the concentration of described potassium permanganate solution is 0.1g/ml-2g/ml.
Optionally, the etch period of described second step etching is 10s-60s.
Optionally, before carrying out first step etching, form the photoetching of patterning at described semiconductor substrate surface
Glue.
Optionally, first step etching, the table of described Semiconductor substrate are carried out with the non-mask of photoresist of patterning
Face forms groove after the first step etches.
Optionally, after carrying out second step etching, use acetone, ethanol and the mixed solution of deionized water
Remove the photoresist of described patterning.
Optionally, described Semiconductor substrate is silicon substrate.
Optionally, when described first step etching and second step etch, the temperature of etching solution maintains 0 DEG C-30 DEG C
Between.
The lithographic method of the present invention, after described Semiconductor substrate is carried out first step etching, Semiconductor substrate
The flatness on surface increase, then use the mixed solution row second step etching of potassium permanganate and phosphoric acid, can
To be effectively improved the rough structure formed after first step etching, thus improve semiconductor substrate surface
Flatness.
Accompanying drawing explanation
Fig. 1 is the flow chart of lithographic method of the present invention；
Fig. 2-Fig. 4 is the profile of the semiconductor structure that each step is corresponding in lithographic method one embodiment of the present invention；
Fig. 5 is the surface height map of the groove formed in one embodiment of the invention；
Fig. 6 be another embodiment of the present invention performs etching during semiconductor substrate surface roughness curve.
Detailed description of the invention
Below in conjunction with schematic diagram, the lithographic method of the present invention is described in more detail, which show this
The preferred embodiment of invention, it should be appreciated that those skilled in the art can revise invention described herein, and
Still the advantageous effects of the present invention is realized.Therefore, description below is appreciated that for people in the art
Member's is widely known, and is not intended as limitation of the present invention.
The core concept of the present invention is, first Semiconductor substrate carries out first step etching, and the first step etches
The groove formed afterwards can obtain the most vertical wide ratio, owing in first step etching process, hydrogen peroxide easily divides
Solve so that the surface irregularity of etching.Then phosphoric acid and potassium permanganate and mixed solution is used to carry out second step
Etching, owing to phosphoric acid etching has good anisotropy, potassium permanganate has stronger oxidisability, and
Phosphoric acid does not reacts with potassium permanganate, so that after second step etching, the uniformity on the surface of etching obtains
Good improvement, keep the preferably vertical width ratio of groove simultaneously.
Shown in flow chart reference Fig. 1 of the lithographic method of the present invention, and below in conjunction with-6 pairs of lithographic methods of Fig. 2
Each step be specifically described.
With reference to shown in Fig. 2, perform step S1, it is provided that Semiconductor substrate 10, in described Semiconductor substrate 10
Upper spin coating photoresist, and through overexposure, develop, the step such as drying, form the photoresist 20 of patterning.Institute
Stating Semiconductor substrate 10 is silicon substrate, and, described Semiconductor substrate 10 can include that shallow trench is isolated
The structures such as structure (STI), source electrode, drain electrode, are not shown specifically in figure, and this is that those skilled in the art may be used
With understand, do not repeat at this.
With reference to shown in Fig. 3, perform step S2, with acid solution, hydrogenperoxide steam generator, deionized water by certain
Volume ratio mixed preparing the first solution, in described first solution, the shared volume of acid is 1/20～1/2, described first
In solution, volume shared by hydrogen peroxide is 1/20～2/5.Wherein, acid solution can use phosphoric acid solution, sulphuric acid molten
The acid solution such as liquid, hydrofluoric acid solution.The present embodiment illustrates as a example by phosphoric acid solution, phosphoric acid solution,
Hydrogenperoxide steam generator, the volume ratio of deionized water can be 1: 1.5: 10.In preferred version, by the first of preparation
Solution stands five to ten days under light protected environment, there may be the impurity such as complex due to bottom solution, therefore,
The middle level solution taking the first solution carries out first step etching to described Semiconductor substrate 10, with the photoetching of patterning
The non-mask of glue carries out first step etching, and the time carrying out the first etching is 500s-1500s.
Fig. 3 show the schematic diagram of perfect condition lower groove 30, and in first step etching process, hydrogen peroxide will
Silicon substrate is oxidized to silicon oxide, silicon oxide and acid reaction, thus forms groove 30.In actual growth, entering
In row first step etching process, due to the characteristic unstable, labile of hydrogen peroxide, in catabolic process
Produce bubble, so that the surface of groove 30 and sidewall out-of-flatness after first step etching, formed in Fig. 3
Shown rough structure, have impact on the uniformity of groove 30 surface and sidewall.
With reference to shown in Fig. 4, perform step S3, use the second solution prepared in advance that described quasiconductor is served as a contrast
The end 10, carries out second step etching, and the second solution is the mixed solution of phosphoric acid solution, potassium permanganate solution.
In the present embodiment, the preparation steps of the second solution includes: first, prepares potassium permanganate solution, described
The concentration of potassium permanganate solution is 0.1g/ml-2g/ml, such as, by 100ml deionized water and 1.5g permanganic acid
The proportions potassium permanganate solution of potassium, puts into potassium permanganate solution in Ultrasound Instrument in process for preparation and surpasses
Sound so that potassium permanganate is substantially dissolved in deionized water, and ultrasonic time such as may be controlled to
20min-30min；Afterwards, potassium permanganate solution is stood five to ten days, takes its upper solution and again surpass
Sound also stands five to ten days again；Finally, take again stand after potassium permanganate solution upper solution with
Phosphoric acid solution is configured to the second solution according to a certain volume, and the volume of potassium permanganate solution is the body of phosphoric acid solution
Long-pending five to ten times, it is preferred that potassium permanganate solution is 10: 1 with the volume ratio of phosphoric acid solution, mixing same
The ultrasonic solution mix homogeneously that makes of Shi Jinhang, thus obtain the second solution.Carry out ultrasonic, stand so that molten
Liquid is more uniform, and takes the clear liquid in solution.
In the present embodiment, after carrying out first step etching, carrying out second step etching immediately, second step etches
Time be 10s-60s.Further, after having carried out second step etching, use deionized water to described quasiconductor
Substrate 10 is rinsed, and is cleaned by the etching solution remained in groove 30.It should be noted that entering
In row second step etching process, potassium permanganate has strong oxidizing property, and silica in silicon substrate is turned to by potassium permanganate
Silicon oxide, phosphoric acid and silicon oxide react generation soluble substance, thus complete second step etching, so that second
After step etching, the surface of groove 30 and the flatness of sidewall are well improved, thus improve groove
Surface uniformity, and, the vertical wide ratio of groove 30 can well be kept.Additionally, through second
After etching, the width of groove 30 and the degree of depth have and can increased, and its numerical value increased depends on second step
The time of etching.Certainly, in the present invention, it is also possible to improved by the time of increase second step etching and partly lead
The roughness of body substrate surface, but, due to the anisotropy of phosphoric acid with the mixed solution etching of potassium permanganate
Bad, thus, the time increasing second step etching can reduce the vertical wide ratio of groove 30.
In second solution, phosphoric acid does not reacts with potassium permanganate, potassium permanganate as strong oxidizer, and phosphoric acid with
The oxide of the Semiconductor substrate after oxidation reacts, thus performs etching Semiconductor substrate.
Carrying out in first step etching and second step etching process, it is 0 DEG C-30 DEG C that the temperature of etching solution maintains
Between.Preferably, carrying out first step etching and second step etches in the environment of mixture of ice and water, frozen water mixes
The temperature stabilization of compound is 0 DEG C, makes etch rate relatively low and more stable under this temperature environment, so that carve
The condition of erosion is relatively stable.
Preferably, after second step has etched, acetone, ethanol, the mixed solution of deionized water is used to incite somebody to action
The photoresist 20 of the patterning on Semiconductor substrate 10 surface is removed.Now, after lithographic method has etched
The surface height map of the Semiconductor substrate that employing step instrument is measured is with reference to shown in Fig. 5, i.e. Fig. 5 represents formation
The relation of the subregional height and the width in scan line top of step instrument in the profile of step, the most about
Being the surface that part is Semiconductor substrate of 0, height is the groove of the part of-3500, it can be seen that
Relatively sharp-pointed, the vertical width of the sidewall of the groove 30 of etching is bigger, and, the flatness in groove 30 is preferable.
Additionally, in another embodiment of the present invention, lithographic method is used for etch semiconductor substrates 10 surface, i.e.
Do not form photoresist on the surface of Semiconductor substrate, etch the surface of whole Semiconductor substrate, and be formed without ditch
Groove.Such as, take the Semiconductor substrate 10 of the 1cm × 1cm of well cutting, use above-mentioned identical method to etch institute
State Semiconductor substrate 10, first carry out first step etching, then carry out second step etching.And in etching process
The roughness on Semiconductor substrate 10 surface measured by the instruments such as middle employing step instrument.It should be noted that for table
Levy the smooth degree on surface, need to introduce this concept of surface roughness.Surface roughness be used to characterize by
All kinds of defects present on material surface atomic layer and the microcosmos geometric shape error that causes, be usually expressed as meat
Micro-spike and nick that the nondescript spacing of eye is minimum are cheated.Surface roughness is the least, and surface is the most smooth.Mesh
Front quantization surface roughness is most commonly used that profile arithmetic average error (Ra), profile offset distance (Y) refer to
Point on measured zone Internal periphery is to the distance at datum line, the expression that profile arithmetic average error can approximate
For:Wherein, YiFor the profile offset distance that every bit is corresponding.With reference to shown in Fig. 6, carry out first
Before step etching, the surface roughness of Semiconductor substrate 10 isAfter the first step etches, half
The roughness on the surface of conductor substrate 10 is greatly increased, forAnd after carrying out second step etching, half
The surface roughness of conductor substrate 10 isThrough the lithographic method of the present invention, the flatness on surface obtains
To improving.It should be noted that owing to, in etching process, the environment of etching maintains 0 DEG C, it may be assumed that etching
The temperature of solution is maintained at 0 DEG C, thus etching speed is held essentially constant.But, inventor is sent out by experiment
Bright discovery, with reference to shown in Fig. 6, etch in first step etching process (0-800s) is constantly carried out, and brings
The effect of surface irregularity first rapidly increases to a certain value, is slowly increased afterwards.Same, second step etches
The flatness on process (after 800s) surface first quickly falls to a certain value, the most slowly reduces, so that
The flatness obtaining surface is improved.
In sum, the lithographic method of the present invention, use the mixed solution of phosphoric acid and potassium permanganate to perform etching,
The vertical wide ratio of the groove after both can having kept etching, it is also possible to after making groove or Semiconductor substrate etching
The flatness on surface improved.
Obviously, those skilled in the art can carry out various change and modification without deviating from this to the present invention
Bright spirit and scope.So, if the present invention these amendment and modification belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to comprise these change and modification.
Claims (12)
1. a lithographic method, it is characterised in that including:
Semiconductor substrate is provided；
Using the first solution that described Semiconductor substrate carries out first step etching, described first solution includes acid
And hydrogen peroxide；And
Using the second solution that described Semiconductor substrate carries out second step etching, described second solution includes phosphorus
Acid and potassium permanganate.
2. lithographic method as claimed in claim 1, it is characterised in that described acid is phosphoric acid, sulphuric acid or hydrogen
Fluoric acid.
3. lithographic method as claimed in claim 1, it is characterised in that in described first solution shared by acid
Volume is 1/20～1/2, and in described first solution, volume shared by hydrogen peroxide is 1/20～2/5.
4. lithographic method as claimed in claim 1, it is characterised in that during the etching that the described first step etches
Between be 500s-1500s.
5. lithographic method as claimed in claim 1, it is characterised in that described second solution is by potassium permanganate
Solution is formulated with phosphoric acid solution, and the volume of potassium permanganate solution is 5～10 times of the volume of phosphoric acid solution.
6. lithographic method as claimed in claim 5, it is characterised in that the concentration of described potassium permanganate solution
For 0.1g/ml-2g/ml.
7. lithographic method as claimed in claim 1, it is characterised in that during the etching that described second step etches
Between be 10s-60s.
8. lithographic method as claimed in claim 1, it is characterised in that before carrying out first step etching,
Described semiconductor substrate surface forms the photoresist of patterning.
9. lithographic method as claimed in claim 8, it is characterised in that with the non-mask of photoresist of patterning
Carrying out first step etching, the surface of described Semiconductor substrate forms groove after the first step etches.
10. lithographic method as claimed in claim 8, it is characterised in that after carrying out second step etching, adopt
The photoresist of described patterning is removed with the mixed solution of acetone, ethanol and deionized water.
11. lithographic methods as described in any one in claim 1-10, it is characterised in that described quasiconductor
Substrate is silicon substrate.
12. lithographic methods as described in any one in claim 1-10, it is characterised in that the described first step
When etching and second step etch, the temperature of etching solution maintains between 0 DEG C-30 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510325500.7A CN106252221A (en) | 2015-06-13 | 2015-06-13 | Lithographic method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510325500.7A CN106252221A (en) | 2015-06-13 | 2015-06-13 | Lithographic method |
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| Publication Number | Publication Date |
|---|---|
| CN106252221A true CN106252221A (en) | 2016-12-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510325500.7A Pending CN106252221A (en) | 2015-06-13 | 2015-06-13 | Lithographic method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108040435A (en) * | 2017-12-12 | 2018-05-15 | 北京科技大学 | A kind of aluminum nitride ceramic substrate circuit lithographic method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4294651A (en) * | 1979-05-18 | 1981-10-13 | Fujitsu Limited | Method of surface-treating semiconductor substrate |
| US20060292821A1 (en) * | 2003-09-09 | 2006-12-28 | Csg Solar Ag | Method of etching silicon |
| CN103454703A (en) * | 2013-09-12 | 2013-12-18 | 长春理工大学 | Method of manufacturing GaAs micro lens in wet etching method |
| CN103531458A (en) * | 2013-09-09 | 2014-01-22 | 长春理工大学 | Method for carrying out wet etching on GaAs-based material by utilizing two-step method |
-
2015
- 2015-06-13 CN CN201510325500.7A patent/CN106252221A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4294651A (en) * | 1979-05-18 | 1981-10-13 | Fujitsu Limited | Method of surface-treating semiconductor substrate |
| US20060292821A1 (en) * | 2003-09-09 | 2006-12-28 | Csg Solar Ag | Method of etching silicon |
| CN103531458A (en) * | 2013-09-09 | 2014-01-22 | 长春理工大学 | Method for carrying out wet etching on GaAs-based material by utilizing two-step method |
| CN103454703A (en) * | 2013-09-12 | 2013-12-18 | 长春理工大学 | Method of manufacturing GaAs micro lens in wet etching method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108040435A (en) * | 2017-12-12 | 2018-05-15 | 北京科技大学 | A kind of aluminum nitride ceramic substrate circuit lithographic method |
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