CN106229266A - Hetero-junctions spin filtering and the preparation technology of negative differential resistance effect - Google Patents
Hetero-junctions spin filtering and the preparation technology of negative differential resistance effect Download PDFInfo
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- CN106229266A CN106229266A CN201610732685.8A CN201610732685A CN106229266A CN 106229266 A CN106229266 A CN 106229266A CN 201610732685 A CN201610732685 A CN 201610732685A CN 106229266 A CN106229266 A CN 106229266A
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- 230000000694 effects Effects 0.000 title claims abstract description 19
- 238000001914 filtration Methods 0.000 title claims abstract description 14
- 238000005516 engineering process Methods 0.000 title claims abstract description 8
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 238000004458 analytical method Methods 0.000 claims abstract description 5
- 238000005457 optimization Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 3
- 230000032258 transport Effects 0.000 description 17
- 229910001291 heusler alloy Inorganic materials 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000005291 magnetic effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000001786 chalcogen compounds Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66984—Devices using spin polarized carriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Abstract
The invention provides a kind of based on Co2MnGe/GaAs hetero-junctions spin filtering and the preparation technology of negative differential resistance effect, the first step: build full Haeussler L21Type Co2The crystal structure of MnGe, is optimized its lattice structure；Second step: in balance lattice paprmeter aeqUnder, to Co2The density of states of MnGe carries out calculating and being analyzed；3rd step: build Co2The hetero-junctions of MnGe/GaAs<111>direction is also optimized；4th step: the material at the two ends, hetero-junctions left and right after optimizing is repeated a cycle, respectively as the left and right electrode of hetero-junctions；5th step: be biased on the left and right electrode of hetero-junctions, calculates Co2The Quantum Spin transport property of MnGe/GaAs hetero-junctions；6th step: by Co2The analysis of MnGe/GaAs hetero-junctions transport property, it is thus achieved that the spin filtering in transport process and negative differential resistance effect.
Description
Technical field
The present invention relates to a kind of based on Co2MnGe/GaAs hetero-junctions spin filtering and the preparation work of negative differential resistance effect
Skill.
Background technology
Inject efficient spin polarized current to quasiconductor, be a key issue of spintronics needs solution.Right
In the mechanism that this spin polarization is injected, people understand the most completely.One is mainly due to: in tediously long amount
In sub-transport process, between spin injection source and Semiconductor substrate, create bigger impedance mismatching.Semimetal (HM:Half-
Metallic) magnet, shows quasiconductor or insulating properties owing to showing in a spin direction on another direction of metallicity,
Cause the spin polarization producing 100% near Fermi surface, regarded as preferably spin injection source by people.Nowadays, it has been found that
Many materials all have above-mentioned Half-metallic, such as: the CrO of rutile-type2, the transition metal phosphorus of zincblende lattce structure or chalcogen
Compound, C1 b Half heusler alloy (half-Heusler alloy) of structure XYZ type or L21The X of structure2YZ type is complete suddenly
Jennifer "JJ" Isler alloy (full-Heusler alloy), sphalerite or the alkaline-earth nitride of rock salt structure and carbide.Especially
Ground, has the semimetal antiferromagnet of zero magnetic moment, owing to having relatively low leakage field and energy consumption during Quantum Transport, equally
The design and application of spin electric device are placed high hopes by people.
In the middle of above-mentioned HALF-METALLIC MAGNETS, Heusler alloy has a higher Curie temperature, higher magnetic moment, especially
And having good lattice match between common quasiconductor, therefore it is seen in the actual application of spintronics devices
Work is one of the most promising spin injection source.Although Heusler alloy has been observed that more than 100 year, but to its research always
Lasting, because this kind of alloy has very abundant physical property, such as superconduction, thermoelectricity, Half-metallic and topology insulating properties etc..
It addition, it has been found that in addition to common ternary full-Heusler alloy or half-Heusler alloy, binary or quaternary
Heusler alloy also has good Half-metallic.Recently, Y. Du et al. is found that a kind of unique material---without energy gap half gold
Belonging to magnet (Gapless HM), one spin passage of this kind of material is metallic, and another spin passage is without energy gap.He
Foretell anti-heusler alloy Fe in theory2CoSi shows without energy gap semimetal characteristic, and has the spin pole of 100%
Change.Meanwhile, they experimentally record the Curie temperature of this kind of alloy and are up to 1038K.This incompetent gap semiconductor that is similar to spin
Behavior, imply that the contenders also designing and preparing spin electric device without energy gap semi-metallic.
The problems such as structure, electromagnetic property and the stability thereof for above-mentioned spintronics material film, cause in recent years
Many theories and the extensive concern of laboratory staff, in this respect, this seminar has done some relevant work and has taken
Obtained certain achievement in research.Additionally, talk about before us, inject efficient spin polarized current to quasiconductor, be spin electricity
Son learns the key issue needing to solve.So, only magneto-electric behavior and the stability of research above-mentioned material thin film is far from
No more.Wanting to obtain efficient spin polarized current, we must study this type of on the basis of the studies above result further
The Spin-polarized Transport Properties of hetero-junctions.I.e. by analyzing i-v curve, it is thus achieved that preferably spin field effect, mainly include
Giant magnetoresistance, tunnel magnetoresistive, Spin Valve, rectifying effect and negative differential resistance effect etc. weigh the main of spin electric device performance
Parameter.One of hot issue that people pay close attention in recent years has been become about spin-dependent transport Quality Research, but mostly
Number research all concentrates on the Quantum Transport of ferromagnetic material especially Graphene in nature, and the transport property about semi-metallic is ground
Study carefully the most fewer.For semimetal to quasiconductor injecting and polarizing electric current, this seminar by CrAs/AlAs, ZnTe/CrTe and
The theoretical research of the hetero-junctions transport properties such as CrS/ZnSe, it is thus achieved that fabulous diode effect, good negative differential resistance are imitated
Should be with the highest tunnel magneto-resistance effect, this show again semi-metallic is design and the ideal preparing spin electric device
Material.
Therefore, existing process falls behind, and needs to improve.
Summary of the invention
The technical problem to be solved is to provide a kind of new based on Co2MnGe/GaAs hetero-junctions spin filtering
Preparation technology with negative differential resistance effect.
Technical scheme is as follows: a kind of based on Co2MnGe/GaAs hetero-junctions spin filtering and negative differential resistance effect
The preparation technology answered, comprises the following steps:
The first step: build full Haeussler L21Type Co2The crystal structure of MnGe, is optimized its lattice structure, it is thus achieved that balance
Lattice paprmeter aeq；
Second step: in balance lattice paprmeter aeqUnder, to Co2The density of states of MnGe carries out calculating and being analyzed, and determines bulk
Co2MnGe has good Half-metallic；
3rd step: in<111>direction, builds semimetal Co2MnGe and semiconductor GaAs composition hetero-junctions and be optimized,
During optimization, in order to as close as reality, it is allowed to the atom site relaxation of 5 layers, other atoms about near interface
Position is fixed；
4th step: the material at the two ends, hetero-junctions left and right after optimizing in the 3rd step is repeated a cycle, respectively as hetero-junctions
Left and right electrode；
5th step: be biased on the left and right electrode of hetero-junctions, calculates Co2The Quantum Spin of MnGe/GaAs hetero-junctions transports
Character；
6th step: by Co2The analysis of MnGe/GaAs hetero-junctions transport property, it is thus achieved that the spin filtering in transport process and
Negative differential resistance effect.
Accompanying drawing explanation
Fig. 1-a full Haeussler L21Type Co2The crystal structure of MnGe；
The density of states of Fig. 1-b monolithic structure, vertical dotted line represents Fermi surface；
Fig. 2 calculates the Co of quantum spin transport properties2MnGe/GaAs heterojunction model；
Fig. 3 Co2The spinning current of MnGe/GaAs hetero-junctions is with the variation relation of bias；
Fig. 4 present invention process flow chart.
Detailed description of the invention
For the ease of understanding the present invention, below in conjunction with the accompanying drawings and specific embodiment, the present invention will be described in more detail.
This specification and accompanying drawing thereof give the preferred embodiment of the present invention, but, the present invention can be in many different forms
Realize, however it is not limited to the embodiment described by this specification.On the contrary, providing the purpose of these embodiments is to make the present invention
The understanding of disclosure more thorough comprehensively.
It should be noted that when a certain element is fixed on another element, be directly fixed on this another including by this element
Individual element, or this element is fixed on this another element by least one other element placed in the middle.When an element connects
Connect another element, including this element being directly connected to this another element or this element is placed in the middle by least one
Other element be connected to this another element.
A kind of based on Co2MnGe/GaAs hetero-junctions spin filtering and the preparation technology of negative differential resistance effect, including following
Step:
The first step: build full Haeussler L21Type Co2The crystal structure of MnGe, is optimized its lattice structure, it is thus achieved that balance
Lattice paprmeter aeq；
Second step: in balance lattice paprmeter aeqUnder, to Co2The density of states of MnGe carries out calculating and being analyzed, and determines bulk
Co2MnGe has good Half-metallic；
3rd step: in<111>direction, builds semimetal Co2MnGe and semiconductor GaAs composition hetero-junctions and be optimized,
During optimization, in order to as close as reality, it is allowed to the atom site relaxation of 5 layers, other atoms about near interface
Position is fixed；
4th step: the material at the two ends, hetero-junctions left and right after optimizing in the 3rd step is repeated a cycle, respectively as hetero-junctions
Left and right electrode；
5th step: be biased on the left and right electrode of hetero-junctions, calculates Co2The Quantum Spin of MnGe/GaAs hetero-junctions transports
Character；
6th step: by Co2The analysis of MnGe/GaAs hetero-junctions transport property, it is thus achieved that the spin filtering in transport process and
Negative differential resistance effect.
First, as shown in Fig. 1 (a), we build full Haeussler L21Type Co2MnGe crystal structure is also optimized acquisition
It balances lattice paprmeter, a0=5.8037 Å.Based on this, we use lattice paprmeter a of optimization0=5.8037 calculate its bulk
Electromagnetic property, shown in its density of states such as Fig. 1 (b), from Fig. 1 (b) we it is clear that the Co of bulk2MnGe has bright
Aobvious semimetal characteristic, the passage i.e. spun up have passed through Fermi surface, shows metallic character, and the downward passage that spins is Fermi
There is the energy gap of an about 0.7eV near face, there is obvious characteristic of semiconductor.
It follows that we pay close attention to Co2The Quantum Spin transport property of MnGe/GaAs hetero-junctions.Above-mentioned based on us
The monolithic structure optimized, we set up Co2MnGe/GaAs<111>direction interfacial structure, middle scattering layer as shown in Figure 2.
It is with semimetal Co2Ge atom in MnGe and the heterojunction structure that As atom is boundary layer atom in semiconductor GaAs.It
So choosing this hetero-junctions to calculate the model of transport property as us, it is because in our previous studies finding, Ge-As
Interface maintains Co2Semimetal characteristic in MnGe bulk, and study the Quantum Transport character with semimetal characteristic hetero-junctions
It it is our interest place.Before calculating character, first we carry out structure optimization to this hetero-junctions: allows about near interface
The atom site relaxation of 5 layers, other atom sites are fixed.After structure optimization, we are the two ends, hetero-junctions left and right after optimization
Material repeats a cycle respectively, and the left and right electrode as hetero-junctions forms the complete model shown in Fig. 2.
Finally, we are to Co2MnGe/GaAs hetero-junctions is biased, and calculates its Quantum Spin transport property.Need explanation
, the bias range that we apply is-1 to 1V.Its result of calculation is as shown in Figure 3: spinning current is with the variation relation of bias.
From Fig. 3, we are it can directly be seen that two important phenomenons: (1) the downward electric current that spins is 0 in whole bias range,
The downward electric current that i.e. spins is confinement, can only observe the current curve spun up.This phenomenon illustrates, we are set up
Co2MnGe/GaAs hetero-junctions has fabulous spin filtering effect；(2) in the range of back bias voltage, the electric current spun up is with partially
Press the increase of absolute value that situation about reducing occurs, the negative differential resistance effect required for this phenomenon spin electric device just.
In a word, by the analysis to Fig. 3, we understand, Co2MnGe/GaAs hetero-junctions has spin filtering and negative differential resistance simultaneously
Two kinds of special effects, we are designed and prepare spin electric device by this is highly important.
It should be noted that above-mentioned each technical characteristic continues to be mutually combined, form various embodiments the most enumerated above,
It is accordingly to be regarded as the scope that description of the invention is recorded；Further, for those of ordinary skills, can add according to the above description
To improve or conversion, and all these modifications and variations all should belong to the protection domain of claims of the present invention.
Claims (1)
1. a hetero-junctions spin filtering and the preparation technology of negative differential resistance effect, it is characterised in that comprise the following steps:
The first step: build full Haeussler L21Type Co2The crystal structure of MnGe, is optimized its lattice structure, it is thus achieved that balance
Lattice paprmeter aeq；
Second step: in balance lattice paprmeter aeqUnder, to Co2The density of states of MnGe carries out calculating and being analyzed, and determines bulk
Co2MnGe has good Half-metallic；
3rd step: in<111>direction, builds semimetal Co2MnGe and semiconductor GaAs composition hetero-junctions and be optimized,
During optimization, in order to as close as reality, it is allowed to the atom site relaxation of 5 layers, other atoms about near interface
Position is fixed；
4th step: the material at the two ends, hetero-junctions left and right after optimizing in the 3rd step is repeated a cycle, respectively as hetero-junctions
Left and right electrode；
5th step: be biased on the left and right electrode of hetero-junctions, calculates Co2The Quantum Spin transport property of MnGe/GaAs hetero-junctions
Matter；
6th step: by Co2The analysis of MnGe/GaAs hetero-junctions transport property, it is thus achieved that the spin filtering in transport process is with negative
Differential resistance effect.
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| CN201610732685.8A CN106229266B (en) | 2016-08-27 | 2016-08-27 | Preparation process of heterojunction spin filtering and negative differential resistance effect |
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| CN201610732685.8A CN106229266B (en) | 2016-08-27 | 2016-08-27 | Preparation process of heterojunction spin filtering and negative differential resistance effect |
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| CN106229266A true CN106229266A (en) | 2016-12-14 |
| CN106229266B CN106229266B (en) | 2020-06-23 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107039587A (en) * | 2017-03-31 | 2017-08-11 | 东南大学 | Negative differential resistance and preparation method based on black phosphorus/rhenium disulfide hetero-junctions |
| CN109360853A (en) * | 2018-08-15 | 2019-02-19 | 杭州电子科技大学 | Improve the heterojunction structure and method of molybdenum disulfide zigzag bands spin polarizability |
| CN111063796A (en) * | 2019-11-22 | 2020-04-24 | 西安交通大学 | Local strain controlled spin valve structure unit, device and control method |
| CN111429982A (en) * | 2020-02-10 | 2020-07-17 | 江苏大学 | Method for calculating negative differential resistance effect of tin sulfide-tin selenide heterojunction |
-
2016
- 2016-08-27 CN CN201610732685.8A patent/CN106229266B/en not_active Expired - Fee Related
Non-Patent Citations (3)
| Title |
|---|
| CHRISTOPH ADELMANN: "Spin injection from the Heusler alloy CO2MnGe into Al0.1Ga0.9As/GaAs", 《APPLIED PHYSICS》 * |
| DIBYA P RAI: "An abinitio study of the half-metallic properties of Co2TGe (T=Sc, Ti, V, Cr,", 《JOURNAL OF THE KOREAN PHYSICAL SOCIETY》 * |
| 韩红培: "Co2VZ(Z=Ga,Al)薄膜半金属性及三维HgTe拓扑绝缘相研究", 《华中科技大学博士学位论文》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107039587A (en) * | 2017-03-31 | 2017-08-11 | 东南大学 | Negative differential resistance and preparation method based on black phosphorus/rhenium disulfide hetero-junctions |
| CN109360853A (en) * | 2018-08-15 | 2019-02-19 | 杭州电子科技大学 | Improve the heterojunction structure and method of molybdenum disulfide zigzag bands spin polarizability |
| CN109360853B (en) * | 2018-08-15 | 2022-01-14 | 杭州电子科技大学 | Heterojunction structure and method for improving spin polarizability of molybdenum disulfide sawtooth-shaped strip |
| CN111063796A (en) * | 2019-11-22 | 2020-04-24 | 西安交通大学 | Local strain controlled spin valve structure unit, device and control method |
| CN111063796B (en) * | 2019-11-22 | 2021-10-15 | 西安交通大学 | Local strain controlled spin valve structure unit, device and control method |
| CN111429982A (en) * | 2020-02-10 | 2020-07-17 | 江苏大学 | Method for calculating negative differential resistance effect of tin sulfide-tin selenide heterojunction |
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