CN106226171A - The piezoelectric semiconductor's fracture failure experiment research changed based on polarised direction - Google Patents
The piezoelectric semiconductor's fracture failure experiment research changed based on polarised direction Download PDFInfo
- Publication number
- CN106226171A CN106226171A CN201610816047.4A CN201610816047A CN106226171A CN 106226171 A CN106226171 A CN 106226171A CN 201610816047 A CN201610816047 A CN 201610816047A CN 106226171 A CN106226171 A CN 106226171A
- Authority
- CN
- China
- Prior art keywords
- piezoelectric semiconductor
- standard specimen
- semiconductor
- piezoelectric
- experiment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/20—Investigating strength properties of solid materials by application of mechanical stress by applying steady bending forces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/0058—Kind of property studied
- G01N2203/006—Crack, flaws, fracture or rupture
- G01N2203/0067—Fracture or rupture
Abstract
The invention discloses the piezoelectric semiconductor's fracture failure experiment research changed based on polarised direction, the piezoelectric semiconductor standard specimen different including making polarised direction precrack on piezoelectric semiconductor's standard specimen；The fracture toughness experiment of piezoelectric semiconductor's standard specimen is carried out under mechanical stress fields, current field, high voltage field and coupled field loading environment thereof；Crackle is fabricated to conducting crack, the fracture failure characteristic of piezoelectric semiconductor's material when each physical field and coupled field thereof load in the case of conducting crack simultaneously；In the case of obtaining lot of experimental data, fracture failure mechanism according to the above-mentioned each physical field loading environment lower piezoelectric semi-conducting material of fitting experimental data also concludes the fracture failure mathematical model of piezoelectric semiconductor's material, from the inefficacy of angle research many field conditions lower piezoelectric semi-conducting material of fracture damage, the designing quality improving piezoelectric semiconductor's device had highly important scientific basis and practical value.
Description
Technical field
The invention belongs to piezoelectric semiconductor's technical field, particularly to a kind of piezoelectric semiconductor changed based on polarised direction
Fracture failure experiment research.
Background technology
Along with semi-conducting material and the fast development of piezoelectric technology, it has been found that a kind of have the half of piezoelectric properties concurrently
Conductor material i.e. piezoelectric semiconductor, such as CdS, CdSe, ZnO, AlN, GaN etc..Piezoelectric semiconductor has piezoelectric and quasiconductor
Material dual physical characteristic, also has the advantages such as high heat conductance, high electronics drift velocity saturated, high and big disruptive critical voltage,
So becoming development high-frequency high-power, high temperature resistant, Flouride-resistani acid phesphatase semiconductor microelectronics and the ideal material of circuit, navigate in aviation
My god, military affairs, satellite communication, automobile, the field such as oil exploitation obtained the highest attention, have a wide range of applications.
During the use of electronic device, semiconductor device failure accounts for more than half that electronic device lost efficacy, quasiconductor
Component failure is it is usually because the local stress of material internal has exceeded their maximum rating, before current technology
Piezoelectric semiconductor's device on edge, the problem equally existing bigger crash rate, so the Damage and Failure to piezoelectric semiconductor's material
Study particularly important.Experimentation to piezoelectric semiconductor's material failure mechanism, can improve piezoelectric semiconductor's device products
Designing quality, is favorably improved the reliability of electronic equipment, the development speed to quickening piezoelectric semiconductor device, improves piezoelectricity half
The yield rate of conductor device and reliability are respectively provided with important meaning.China is the most also strengthening failure analysis and failure mechanism
The research of aspect, and establish some specialized laboratories, improve basis and the condition carrying out reliability consideration.But current research
It is to launch research based on failure analysis with the fermentation such as detection technique, reliability evaluation mostly, and for the basis of semiconductor device
Levy material damage mechanism the fewest with mathematical model aspect research, the fracture under piezoelectric semiconductor's material multi-scenarios method environment is lost
The experiment research that effect research is not more relevant.
It is said that in general, piezoelectric semiconductor's material is fragile material, during manufacturing, polarizing and use, it is possible to create as
Crackle, hole, the defect such as it is mingled with；In actual application, piezoelectric semiconductor's device generally requires and bears harsh environment bar
Part, such as mechanical stress fields, stress field, voltage field and current field etc., the most electrically stress, chemical stress, radiation stress and
His factor all can cause piezoelectric semiconductor's device to show the strongest non-linear and big strain, easily occur near defect power and
The concentration of electricity load, can cause Defect expanding under certain condition, ultimately cause the fracture failure of piezoelectric semiconductor's device.
Particularly piezoelectric semiconductor, itself possesses piezoelectric properties, can produce piezoelectric charge in stress or vibration processes,
The extension of crackle or defect is produced extremely complex impact, therefore the polarised direction of experimentation piezoelectric semiconductor own, respectively should
The field of force and the coupling physical field fracture failure mechanism to piezoelectric semiconductor's material, and sum up the fracture of piezoelectric semiconductor's material
Inefficacy mathematical model, has highly important scientific meaning and practical value to piezoelectric semiconductor's device design.Piezoelectric semiconductor
Material has coupled piezoelectric and semi-conducting material dual physical character, the Materials Fracture inefficacy Experiments of Machanics of research piezoelectric semiconductor
Problem, needs to carry out under mechanical stress fields, current field, high voltage field and coupled field loading environment thereof；Piezoelectric semiconductor possesses
The physical property of wide bandgap semiconductor, provides extra-high pressure field loading technique and common piezoelectricity dielectric material to piezoelectric semiconductor
There is the biggest difference, and require that experimental provision possesses high regulation, storage, registration accuracy, overall exhausted of the system that it is also contemplated that
Edge performance, therefore, is proposed the highest requirement to experiment charger and loading insulation environment；But there is presently no for
The experiment research of this fracture failure mechanism of piezoelectric semiconductor's material.
Summary of the invention
The present invention seeks to for solve above-mentioned the problems of the prior art and propose a kind of based on polarised direction change
Piezoelectric semiconductor's fracture damage under mechanical stress fields, current field, high voltage field and coupled field loading environment thereof and rupture tough
Property, accumulation piezoelectric semiconductor material is for the sensitivity of different physical field environment, thus explores above-mentioned physical field to piezoelectricity half
The micromechanism of damage of conductor material.
The present invention solves that the problems referred to above are adopted the technical scheme that: the piezoelectric semiconductor changed based on polarised direction breaks
Split inefficacy experiment research, comprise the steps:
Step A: use otch method to use diamond cutter to split in prefabricated one of the position, middle of piezoelectric semiconductor's sample bottom surface
Stricture of vagina and be fabricated to piezoelectric semiconductor's standard specimen, described piezoelectric semiconductor standard specimen is multiple；Described piezoelectric semiconductor standard
Sample is the cuboid of long L × wide W × high H and four long limits of piezoelectric semiconductor's standard specimen are chamfering, chamfering is 45 ° ±
5 °, a length of C of chamfering；Polarised direction in described piezoelectric semiconductor standard specimen is divided into left direction, right direction, front and back
To or four kinds of situations of vertical direction；
Step B: dividing potential drop electricity semiconductor standard sample in the middle part of step A is placed on the three-point bending fixture of testing machine and crackle court
Under, then the end face loading mechanical stress at piezoelectric semiconductor's standard specimen carries out the fracture toughness of piezoelectric semiconductor's standard specimen
Experiment；
Step C: by the equal silver coating of left and right end face of dividing potential drop electricity semiconductor standard sample in the middle part of step A, be then placed on testing machine
On three-point bending fixture and crackle down, be immersed in the experiment box filling dimethicone, described three-point bending fixture simultaneously
Use isolation material and there is intensity and the hardness of corresponding requirements；Then piezoelectric semiconductor's standard specimen is loaded different electric currents
Value and/or mechanical stress value, carry out when current field effect, mechanical stress fields and during current field coupled in common effect piezoelectricity partly lead
The fracture toughness experiment of body standard specimen；
Step D: the interlayer thin film that electrical insulating property is high, institute are pasted in the left side of dividing potential drop electricity semiconductor standard sample in the middle part of step A
State interlayer thin film and use politef, the most silver-plated in the right side of interlayer thin film left side and piezoelectric semiconductor's standard specimen
Layer, be then placed on the three-point bending fixture of testing machine and crackle down, be immersed in the experimental box filling with dimethicone simultaneously
In box, described three-point bending fixture uses isolation material and has intensity and the hardness of corresponding requirements；Then to piezoelectric semiconductor
Standard specimen loads different high-voltage values and/or mechanical stress value, carries out when high voltage field effect, mechanical stress fields and height
The fracture toughness experiment of piezoelectric semiconductor's standard specimen during voltage field coupled in common effect.
Further, testing chamber described in step C and step D is open-topped cuboid box, described cuboid
The bottom surface of box is polytetrafluoroethylene solids insulant, is optical glass before cuboid box, cuboid box another
Outer three sides are lucite.
Further, in described step A, in the crackle of each piezoelectric semiconductor standard specimen, perfusion silver is starched and is fabricated to lead
Thunder shake stricture of vagina.
Further, in step B, the mobile employing Bit andits control of the pressure head of testing machine and pressure closed loop control the side combined
Formula, comprises the steps:
Step B1: when the pressure head of experimental machine is apart from piezoelectric semiconductor's standard specimen end face 1 millimeter, use Bit andits control to make pressure
Head moves down speed and is adjusted to 0.1 mm/min, simultaneously storage displacement loading data；
Step B2: when the pressure head of experimental machine contacts piezoelectric semiconductor's standard specimen end face, uses pressure closed loop to control to make pressure
The pressure-loaded of piezoelectric semiconductor's standard specimen is carried out by head according to experiment control program, simultaneously storage pressure-loaded data.
Further, in described step C, carry out piezoelectric semiconductor's standard when mechanical stress fields and current field coupled in common effect
The fracture toughness experiment of sample, comprises the steps:
Step C1: adjust stream power supply to load multiple current values at the two ends, left and right of piezoelectric semiconductor's standard specimen first by linear,
Whenever loading a current value, the end face at piezoelectric semiconductor's standard specimen loads mechanical stress and carries out piezoelectric semiconductor's standard
The fracture toughness experiment of sample；
Step C2: the end face at piezoelectric semiconductor's standard specimen loads multiple mechanical stress values, whenever loading a mechanical stress
During value, linear tune stream power supply is used to carry out piezoelectric semiconductor's mark in two ends, the left and right loading current value of piezoelectric semiconductor's standard specimen
The fracture toughness experiment of quasi-sample；
Described linear tune stream power supply is remotely to control to adjust stream power supply, to output current value and with magnitude of voltage have storage, record,
Query function.
Further, in described step D, carry out piezoelectric semiconductor's mark when mechanical stress fields and high voltage field coupled in common effect
The fracture toughness experiment of quasi-sample, comprises the steps:
Step D1: load multiple high-voltage values at two ends, piezoelectric semiconductor's standard specimen left and right first by high voltage power supply, whenever
When loading a high-voltage value, the end face at piezoelectric semiconductor's standard specimen loads mechanical stress and carries out piezoelectric semiconductor's standard examination
The fracture toughness experiment of sample；
Step D2: the end face at piezoelectric semiconductor's standard specimen loads multiple mechanical stress values, whenever loading a mechanical stress
During value, use high voltage power supply to load high-voltage value at the two ends, left and right of piezoelectric semiconductor's standard specimen and carry out piezoelectric semiconductor's standard
The fracture toughness experiment of sample；
Described high voltage power supply is 100kV long-distance intelligent power supply controlling, and output HIGH voltage value is had storage, record, query function.
This experimental technique (1) is in the case of changing piezoelectric semiconductor's standard specimen polarised direction, by mechanical stress
The fracture toughness experiment of piezoelectric semiconductor's standard specimen when field, current field, high voltage field and coupled field thereof load；(2) simultaneously
Crackle is fabricated to conducting crack, and in the case of conducting crack, in mechanical stress fields, current field, high voltage field and coupling thereof
The fracture toughness experiment of piezoelectric semiconductor's standard specimen when field loads；Thus obtain lot of experimental data, according to experimental data
Simulate the fracture failure mechanism of each physical field loading environment lower piezoelectric semi-conducting material above-mentioned and summarize piezoelectric semiconductor
The fracture failure mathematical model of material, from the inefficacy of the angle research piezoelectric semiconductor material of fracture damage, to improving piezoelectricity half
The designing quality of conductor device has highly important scientific basis and practical value.
Accompanying drawing explanation
Fig. 1 is the structural representation making piezoelectric semiconductor's standard specimen；
Fig. 2 is the right view of Fig. 1；
Fig. 3 is the fracture toughness Experimental equipment one of piezoelectric semiconductor's standard specimen；
Fig. 4 is the fracture toughness Experimental equipment two of piezoelectric semiconductor's standard specimen.
Detailed description of the invention
Below in conjunction with the accompanying drawings the present invention is further described.
A kind of piezoelectric semiconductor's fracture failure experiment research changed based on polarised direction, comprises the steps:
As shown in Figure 1, Figure 2 and Figure 3, step A: use otch method in piezoelectric semiconductor's sample bottom surface just using diamond cutter
The prefabricated crackle 1 in centre position and be fabricated to piezoelectric semiconductor's standard specimen 2, described piezoelectric semiconductor standard specimen 2 is many
Individual；Described piezoelectric semiconductor standard specimen 2 is the cuboid of long L × wide W × high H and four of piezoelectric semiconductor's standard specimen 2
Long limit is chamfering, wherein, and L >=18mm, L >=36mm or L >=45mm；W=3±0.1mm；H=4±0.1mm；Chamfering is 45 ° ±
5°；A length of C=0.12 ± the 0.03mm of chamfering；Polarised direction in described piezoelectric semiconductor standard specimen 2 be divided into left direction,
Right direction, fore-and-aft direction or four kinds of situations of vertical direction；This size design is to be prevented effectively from mechanical stress load(ing) point
And the interference that the stress concentration near the strong point is to crackle 1 near zone；Wherein, the width of crackle 1 is not more than 0.1mm；Crackle 1
The degree of depth be 0.4 ± 0.2mm；The width of crackle 1 is made as no more than 0.1mm；The degree of depth of crackle 1 is made as 0.4 ± 0.2mm
It is contemplated to ensure to occur at crackle 1 in fracture toughness experimentation Quick Extended, measures more accurate, if crackle 1
Then may there is steady-state crack propagation more than 0.1mm or the degree of depth more than 0.6mm at precrack 1 in width, and now record is disconnected
Splitting toughness value will be bigger than normal；
Step B: dividing potential drop electricity semiconductor standard sample 2 in the middle part of step A is placed on the three-point bending fixture 8 of testing machine 9 and crackle 1
Down, then end face at piezoelectric semiconductor's standard specimen 2 loads mechanical stress and carries out the fracture of piezoelectric semiconductor's standard specimen 2
Toughness test；Wherein, the mobile employing Bit andits control of the pressure head 5 of testing machine and pressure closed loop control the mode combined, including
Following steps:
Step B1: when the pressure head 5 of experimental machine 9 is apart from piezoelectric semiconductor's standard specimen 2 end face 1 millimeter, uses Bit andits control to make
Pressure head 5 moves down speed and is adjusted to 0.1 mm/min, storage displacement loading data simultaneously；
Step B2: when the pressure head 5 of experimental machine 9 contacts piezoelectric semiconductor's standard specimen 2 end face, uses pressure closed loop to control to make
The pressure-loaded of piezoelectric semiconductor's standard specimen 2 is carried out by pressure head 5 according to experiment control program, simultaneously storage pressure-loaded number
According to.
Owing to piezoelectric semiconductor's material is fragile material, need to ensure to execute within the time required in fracture toughness is tested
Adding uniform stress, this is high not only for the roughness requirements on piezoelectric semiconductor's standard specimen 2 surface, also requires to apply the exhausted of point
Vertical centering is not had deflection, and the method that therefore have employed three-point bending test in this test method carries out the survey of fracture toughness
Amount.
As it is shown on figure 3, step C: by the equal silver coating of left and right end face 7 of dividing potential drop electricity semiconductor standard sample 2 in the middle part of step A,
Then be placed on the three-point bending fixture 8 of testing machine 9 and crackle 1 down, be immersed in the experiment box filling dimethicone 3 simultaneously
In 4, described three-point bending fixture 8 uses isolation material and the intensity with corresponding requirements and hardness, described experiment chamber 4 to be top
The cuboid box of portion's opening, the bottom surface of described cuboid box is polytetrafluoroethylene solids insulant, cuboid box
Being above optical glass, the other three side of cuboid box is lucite, while the insulation of this cuboid box just
In the observation to experiment；Then piezoelectric semiconductor's standard specimen 2 is loaded different current values and/or mechanical stress value, carries out
When current field effect, mechanical stress fields and the fracture toughness of piezoelectric semiconductor's standard specimen 2 during current field coupled in common effect
Experiment；
Wherein, the fracture toughness carrying out piezoelectric semiconductor's standard specimen 2 when mechanical stress fields and current field coupled in common effect is real
Test, comprise the steps:
Step C1: adjust stream power supply 6 to load multiple electric currents at the two ends, left and right of piezoelectric semiconductor's standard specimen 2 first by linear
Value, whenever loading a current value, the end face at piezoelectric semiconductor's standard specimen 2 loads mechanical stress and carries out piezoelectric semiconductor
The fracture toughness experiment of standard specimen 2；
Step C2: the end face at piezoelectric semiconductor's standard specimen 2 loads multiple mechanical stress values, whenever loading a mechanical stress
During value, linear tune stream power supply 6 is used to carry out piezoelectric semiconductor in two ends, the left and right loading current value of piezoelectric semiconductor's standard specimen 2
The fracture toughness experiment of standard specimen 2；
Described linear tune stream power supply is remotely to control to adjust stream power supply, to output current value and with magnitude of voltage have storage, record,
Query function；
Affect experimental data in order to avoid puncturing air when to piezoelectric semiconductor's standard specimen 2 loading current, and be immersed in
Testing in filling the experiment box 4 of dimethicone 3, dimethicone 3 has the effect of insulation, arc extinguishing and heat radiation, simultaneously
Dimethicone 3 has the high feature of colorless and odorless transparency and is easy to the observation to experiment.
As shown in Figure 4, step D: electrical insulating property is pasted in the left side of dividing potential drop electricity semiconductor standard sample 2 in the middle part of step A
High interlayer thin film 10, described interlayer thin film 10 uses politef, and thickness 1mm, at interlayer thin film 10 left side and piezoelectricity
The equal silver coating in right side 7 of semiconductor standard sample 2, be then placed on the three-point bending fixture 8 of testing machine 9 and crackle 1 down,
Being immersed in the experiment chamber 4 filling with dimethicone 3, described three-point bending fixture 8 uses isolation material and has phase simultaneously
The intensity that should require and hardness；Then piezoelectric semiconductor's standard specimen 2 is loaded different high-voltage values and/or mechanical stress
Value, carries out when high voltage field effect, mechanical stress fields and piezoelectric semiconductor's standard specimen 2 during high voltage field coupled in common effect
Fracture toughness experiment；
Wherein, the fracture toughness of piezoelectric semiconductor's standard specimen 2 when mechanical stress fields and high voltage field coupled in common effect is carried out
Experiment, comprises the steps:
Step D1: load multiple high-voltage values first by high voltage power supply 11 at piezoelectric semiconductor's standard specimen about 2 two ends, often
When loading a high-voltage value, the end face at piezoelectric semiconductor's standard specimen 2 loads mechanical stress and carries out piezoelectric semiconductor's mark
The fracture toughness experiment of quasi-sample 2；
Step D2: the end face at piezoelectric semiconductor's standard specimen 2 loads multiple mechanical stress values, whenever loading a mechanical stress
During value, use high voltage power supply 11 to load high-voltage value at the two ends, left and right of piezoelectric semiconductor's standard specimen 2 and carry out piezoelectric semiconductor
The fracture toughness experiment of standard specimen 2；
Described high voltage power supply 11 is 100kV long-distance intelligent power supply controlling, has storage to output HIGH voltage value, records, inquires about merit
Energy.
Owing to the character of piezoelectric is significantly different with general piezoelectricity dielectric material, it is cannot to realize directly around two
End loads high-tension.With gallium nitride piezoelectric semiconductor, long L=40mm；Wide W=3mm；As a example by high H=4mm, its resistance value R=
33.33 Europe, and the electric current of high voltage power supply 11 is smaller general in milliampere magnitude, if being therefore loaded directly into marking in piezoelectric semiconductor
Quasi-sample 2 two ends be unable to reach high-tension, therefore by the left side of piezoelectric semiconductor's standard specimen 2 paste electric insulation
The interlayer thin film 10 that property is high, thus considerably increase the resistance of piezoelectric semiconductor's standard specimen 2 entirety and achieve high-tension
Load；Simultaneously in order to avoid occurring that when loading high voltage to piezoelectric semiconductor's standard specimen 2 high pressure arc discharge affects reality
Testing data, and test in being immersed in the experiment box 4 filling dimethicone 3, dimethicone 3 plays the effect of insulation,
The feature that dimethicone 3 has colorless and odorless transparency high simultaneously is easy to observation experiment.
Above experimental procedure have studied the polarised direction in piezoelectric semiconductor's standard specimen 2 and is divided into left direction, to the right
Piezoelectric semiconductor's standard specimen 2 in the case of, fore-and-aft direction or vertical direction four kinds is at mechanical stress fields, current field, high electricity
Have a meeting, an audience, etc. well under one's control and coupled field load time piezoelectric semiconductor's standard specimen fracture toughness experiment.
In order to study at crackle 1 impact on the fracture toughness of piezoelectric semiconductor's standard specimen 2 in case an electrically conductive,
In the crackle 1 of each piezoelectric semiconductor standard specimen 2, perfusion silver is starched and is fabricated to conducting crack, then by with conducting crack
Piezoelectric semiconductor's standard specimen 2 re-starts piezoelectric semiconductor's standard specimen 2 at machinery according to above-mentioned experimental procedure A to step D
The fracture toughness experiment of piezoelectric semiconductor's standard specimen when stress field, current field, high voltage field and coupled field thereof load.
This experimental technique in the case of changing piezoelectric semiconductor standard specimen 2 polarised direction, by mechanical stress fields,
The fracture toughness experiment of the piezoelectric semiconductor's standard specimen 2 when current field, high voltage field and coupled field thereof load；Simultaneously by crackle
1 is fabricated to conducting crack, piezoelectric semiconductor's mark when above-mentioned each physical field in the case of conducting crack and coupled field thereof load
The fracture toughness experiment of quasi-sample；Thus obtain lot of experimental data, go out each physical field above-mentioned according to fitting experimental data and add
Carry the fracture failure mechanism of environment lower piezoelectric semi-conducting material and summarize the fracture failure mathematical model of piezoelectric semiconductor's material,
From the inefficacy of the angle research piezoelectric semiconductor material of fracture damage, the designing quality improving piezoelectric semiconductor's device is had ten
Divide important scientific basis and practical value.
Last it is noted that above example is only in order to illustrate technical scheme, it is not intended to limit；Although
With reference to previous embodiment, the present invention is described in detail, it will be understood by those within the art that: it still may be used
So that the technical scheme described in foregoing embodiments to be modified, or wherein portion of techniques feature is carried out equivalent,
But these amendment or replace, do not make appropriate technical solution essence depart from various embodiments of the present invention technical scheme spirit and
Scope.
Claims (6)
1. the piezoelectric semiconductor's fracture failure experiment research changed based on polarised direction, it is characterised in that include walking as follows
Rapid:
Step A: use otch method to use diamond cutter to split in prefabricated one of the position, middle of piezoelectric semiconductor's sample bottom surface
Stricture of vagina and be fabricated to piezoelectric semiconductor's standard specimen, described piezoelectric semiconductor standard specimen is multiple；Described piezoelectric semiconductor standard
Sample is the cuboid of long L × wide W × high H and four long limits of piezoelectric semiconductor's standard specimen are chamfering, chamfering is 45 ° ±
5 °, a length of C of chamfering；Polarised direction in described piezoelectric semiconductor standard specimen is divided into left direction, right direction, front and back
To or four kinds of situations of vertical direction；
Step B: dividing potential drop electricity semiconductor standard sample in the middle part of step A is placed on the three-point bending fixture of testing machine and crackle court
Under, then the end face loading mechanical stress at piezoelectric semiconductor's standard specimen carries out the fracture toughness of piezoelectric semiconductor's standard specimen
Experiment；
Step C: by the equal silver coating of left and right end face of dividing potential drop electricity semiconductor standard sample in the middle part of step A, be then placed on testing machine
On three-point bending fixture and crackle down, be immersed in the experiment box filling dimethicone, described three-point bending fixture simultaneously
Use isolation material and there is intensity and the hardness of corresponding requirements；Then piezoelectric semiconductor's standard specimen is loaded different electric currents
Value and/or mechanical stress value, carry out when current field effect, mechanical stress fields and during current field coupled in common effect piezoelectricity partly lead
The fracture toughness experiment of body standard specimen；
Step D: the interlayer thin film that electrical insulating property is high, institute are pasted in the left side of dividing potential drop electricity semiconductor standard sample in the middle part of step A
State interlayer thin film and use politef, the most silver-plated in the right side of interlayer thin film left side and piezoelectric semiconductor's standard specimen
Layer, be then placed on the three-point bending fixture of testing machine and crackle down, be immersed in the experimental box filling with dimethicone simultaneously
In box, described three-point bending fixture uses isolation material and has intensity and the hardness of corresponding requirements；Then to piezoelectric semiconductor
Standard specimen loads different high-voltage values and/or mechanical stress value, carries out when high voltage field effect, mechanical stress fields and height
The fracture toughness experiment of piezoelectric semiconductor's standard specimen during voltage field coupled in common effect.
The piezoelectric semiconductor's fracture failure experiment research changed based on polarised direction the most according to claim 1, its
Being characterised by, testing chamber described in step C and step D is open-topped cuboid box, described cuboid box
Bottom surface is polytetrafluoroethylene solids insulant, is optical glass before cuboid box, the other three of cuboid box
Side is lucite.
The piezoelectric semiconductor's fracture failure experiment research changed based on polarised direction the most according to claim 2, its
Being characterised by, in described step A, in the crackle of each piezoelectric semiconductor standard specimen, perfusion silver is starched and is fabricated to conduction and splits
Stricture of vagina.
4. grind according to piezoelectric semiconductor based on the polarised direction change fracture failure experiment described in any one of claims 1 to 3
Studying carefully method, it is characterised in that in described step B, the mobile employing Bit andits control of the pressure head of testing machine and pressure closed loop control phase
In conjunction with mode, comprise the steps:
Step B1: when the pressure head of experimental machine is apart from piezoelectric semiconductor's standard specimen end face 1 millimeter, use Bit andits control to make pressure
Head moves down speed and is adjusted to 0.1 mm/min, simultaneously storage displacement loading data；
Step B2: when the pressure head of experimental machine contacts piezoelectric semiconductor's standard specimen end face, uses pressure closed loop to control to make pressure
The pressure-loaded of piezoelectric semiconductor's standard specimen is carried out by head according to experiment control program, simultaneously storage pressure-loaded data.
The piezoelectric semiconductor's fracture failure experiment research changed based on polarised direction the most according to claim 4, its
It is characterised by, in described step C, carries out piezoelectric semiconductor's standard specimen when mechanical stress fields and current field coupled in common effect
Fracture toughness is tested, and comprises the steps:
Step C1: adjust stream power supply to load multiple current values at the two ends, left and right of piezoelectric semiconductor's standard specimen first by linear,
Whenever loading a current value, the end face at piezoelectric semiconductor's standard specimen loads mechanical stress and carries out piezoelectric semiconductor's standard
The fracture toughness experiment of sample；
Step C2: the end face at piezoelectric semiconductor's standard specimen loads multiple mechanical stress values, whenever loading a mechanical stress
During value, linear tune stream power supply is used to carry out piezoelectric semiconductor's mark in two ends, the left and right loading current value of piezoelectric semiconductor's standard specimen
The fracture toughness experiment of quasi-sample；
Described linear tune stream power supply is remotely to control to adjust stream power supply, to output current value and with magnitude of voltage have storage, record,
Query function.
The piezoelectric semiconductor's fracture failure experiment research changed based on polarised direction the most according to claim 5, its
It is characterised by, in described step D, carries out piezoelectric semiconductor's standard specimen when mechanical stress fields and high voltage field coupled in common effect
Fracture toughness experiment, comprise the steps:
Step D1: load multiple high-voltage values at two ends, piezoelectric semiconductor's standard specimen left and right first by high voltage power supply, whenever
When loading a high-voltage value, the end face at piezoelectric semiconductor's standard specimen loads mechanical stress and carries out piezoelectric semiconductor's standard examination
The fracture toughness experiment of sample；
Step D2: the end face at piezoelectric semiconductor's standard specimen loads multiple mechanical stress values, whenever loading a mechanical stress
During value, use high voltage power supply to load high-voltage value at the two ends, left and right of piezoelectric semiconductor's standard specimen and carry out piezoelectric semiconductor's standard
The fracture toughness experiment of sample；
Described high voltage power supply is 100kV long-distance intelligent power supply controlling, and output HIGH voltage value is had storage, record, query function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610816047.4A CN106226171B (en) | 2016-09-12 | 2016-09-12 | The piezoelectric semiconductor's fracture failure experiment research changed based on polarization direction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610816047.4A CN106226171B (en) | 2016-09-12 | 2016-09-12 | The piezoelectric semiconductor's fracture failure experiment research changed based on polarization direction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106226171A true CN106226171A (en) | 2016-12-14 |
| CN106226171B CN106226171B (en) | 2018-11-30 |
Family
ID=58074776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610816047.4A Active CN106226171B (en) | 2016-09-12 | 2016-09-12 | The piezoelectric semiconductor's fracture failure experiment research changed based on polarization direction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106226171B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110196256A (en) * | 2019-06-06 | 2019-09-03 | 上海机器人产业技术研究院有限公司 | A kind of mechanical failure analysis method of semiconductor devices |
| CN112462157A (en) * | 2020-11-12 | 2021-03-09 | 苏州大学 | Method for improving output charge of piezoelectric material in crack sensing element |
| CN112630048A (en) * | 2020-11-20 | 2021-04-09 | 长江存储科技有限责任公司 | Strength measuring method and sample |
| CN113707567A (en) * | 2021-07-09 | 2021-11-26 | 长江存储科技有限责任公司 | Method for testing strength of semiconductor structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5602329A (en) * | 1995-08-09 | 1997-02-11 | Massachusetts Institute Of Technology | Method and apparatus for measuring fracture toughness of a material |
| CN1920527A (en) * | 2006-09-15 | 2007-02-28 | 清华大学 | System for measuring force-electricity coupling loading and three-dimensional whole field deformation |
| CN102607971A (en) * | 2012-03-15 | 2012-07-25 | 东华大学 | Test method for cyclic fatigue life under condition of piezoelectric ceramics force electric coupling |
| CN102706726A (en) * | 2012-04-24 | 2012-10-03 | 清华大学 | Force-electricity coupling dynamic fracture experimental system |
| CN104101792A (en) * | 2013-04-11 | 2014-10-15 | 中国科学院上海硅酸盐研究所 | Ferroelectric material ferroelectricity and ferroelasticity measuring system and method under force field, electric field and thermal field |
-
2016
- 2016-09-12 CN CN201610816047.4A patent/CN106226171B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5602329A (en) * | 1995-08-09 | 1997-02-11 | Massachusetts Institute Of Technology | Method and apparatus for measuring fracture toughness of a material |
| CN1920527A (en) * | 2006-09-15 | 2007-02-28 | 清华大学 | System for measuring force-electricity coupling loading and three-dimensional whole field deformation |
| CN102607971A (en) * | 2012-03-15 | 2012-07-25 | 东华大学 | Test method for cyclic fatigue life under condition of piezoelectric ceramics force electric coupling |
| CN102706726A (en) * | 2012-04-24 | 2012-10-03 | 清华大学 | Force-electricity coupling dynamic fracture experimental system |
| CN104101792A (en) * | 2013-04-11 | 2014-10-15 | 中国科学院上海硅酸盐研究所 | Ferroelectric material ferroelectricity and ferroelasticity measuring system and method under force field, electric field and thermal field |
Non-Patent Citations (3)
| Title |
|---|
| CUIYING FAN 等: ""Piezoelectric-conductor iterative method for analysis of cracks in piezoelectric semiconductors via the finite element method"", 《ENGINEERING FRACTURE MECHANICS》 * |
| J.SLADEK 等: ""Influence of electric conductivity on intensity factors for cracks in functionally graded piezoelectric semiconductors"", 《INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES》 * |
| 方岱宁 等: ""功能材料的力、电、磁耦合行为的实验研究"", 《机械强度 》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110196256A (en) * | 2019-06-06 | 2019-09-03 | 上海机器人产业技术研究院有限公司 | A kind of mechanical failure analysis method of semiconductor devices |
| CN112462157A (en) * | 2020-11-12 | 2021-03-09 | 苏州大学 | Method for improving output charge of piezoelectric material in crack sensing element |
| CN112462157B (en) * | 2020-11-12 | 2023-07-21 | 苏州大学 | Method for improving output charge of piezoelectric material in crack sensor |
| CN112630048A (en) * | 2020-11-20 | 2021-04-09 | 长江存储科技有限责任公司 | Strength measuring method and sample |
| CN113707567A (en) * | 2021-07-09 | 2021-11-26 | 长江存储科技有限责任公司 | Method for testing strength of semiconductor structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106226171B (en) | 2018-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106226171A (en) | The piezoelectric semiconductor's fracture failure experiment research changed based on polarised direction | |
| CN106561086B (en) | For transmitting the structure of signal in the application space between device under test and test electronic device | |
| CN106442131B (en) | Piezoelectric semiconductor's multi- scenarios method fracture failure experiment research | |
| Wang et al. | A thermoelectric power sensor and its package based on MEMS technology | |
| Maciel et al. | Rugged and reliable ohmic MEMS switches | |
| US11293946B2 (en) | Conductive contactor unit | |
| Dimitrijevic et al. | Efficient modeling of a circular patch-ring antenna using the cylindrical TLM approach | |
| Ziaei et al. | Fast high power capacitive RF-MEMS switch for X-Band applications | |
| Dey et al. | Extensive performance evaluations of RF MEMS single-pole-multi-throw (SP3T to SP14T) switches up to X-band frequency | |
| Kannojia et al. | Design and fabrication of through-glass via (TGV) based 3D spiral inductors in fused silica substrate | |
| Gong et al. | Study of broadband cryogenic DC-contact RF MEMS switches | |
| Deng et al. | A high-force and high isolation metal-contact RF MEMS switch | |
| Yan et al. | The high power up to 1 W characteristics of the capacitive microwave power sensor with grounded MEMS beam | |
| Han et al. | A V-band waveguide to microstrip inline transition | |
| Afyf et al. | Flexible miniaturized UWB CPW Π-shaped slot antenna for wireless body area network (WBAN) applications | |
| De Angelis et al. | RF MEMS ohmic switches for matrix configurations | |
| Du et al. | 220GHz wide-band MEMS switch in standard BiCMOS technology | |
| Chen et al. | An equivalent investigation of space charge for plane samples and coaxial cables under a temperature gradient | |
| Kumar et al. | A broadband millimeter-wave waveguide window: A low-cost design for environmental protection | |
| Generalov et al. | Millimeter-wave power sensor based on silicon rod waveguide | |
| CN204154864U (en) | A kind of Nonlinear photoconductive switch proving installation | |
| CN108365302B (en) | Semi-filling type high-power coaxial microwave switch | |
| Rao et al. | Design, simulation and analysis of RF-MEMS shunt capacitive switch for 5G application | |
| Zhang et al. | Space charge behavior of silicone rubber nanocomposites with thermal step method | |
| Mahjabeen et al. | Broadband measurement of dielectric properties of substrates up to 67 GHz using a coaxial air line |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |