CN106208997B - The dual gain control circuit of ultra wide band - Google Patents
The dual gain control circuit of ultra wide band Download PDFInfo
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- CN106208997B CN106208997B CN201610589625.5A CN201610589625A CN106208997B CN 106208997 B CN106208997 B CN 106208997B CN 201610589625 A CN201610589625 A CN 201610589625A CN 106208997 B CN106208997 B CN 106208997B
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- 230000009977 dual effect Effects 0.000 title claims abstract description 14
- 239000003990 capacitor Substances 0.000 claims description 54
- 239000013078 crystal Substances 0.000 claims description 4
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- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 238000004891 communication Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000004584 weight gain Effects 0.000 description 2
- 235000019786 weight gain Nutrition 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
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Abstract
The dual gain control circuit of ultra wide band realizes ultra wide band gain-variable double control technology, which includes Dynamic Signal gain-variable circuit in a wide range of gain-variable circuit in a ultrabroad band and a ultrabroad band.The circuit can be used in ultra-wideband receiver system, and collective effect realizes good gain flatness in a wide range of gain-variable and ultrabroad band of ultra wide band variable gain amplifier.Wherein a wide range of gain-variable circuit for rear class constant gain amplifying unit provides variable direct current biasing in ultrabroad band, realizes a wide range of change in gain；Dynamic Signal gain-variable circuit provides the fine gains in special frequency band as the feedback branch of constant gain amplifying circuit in ultrabroad band, realizes the improvement of flatness.
Description
Technical field
It is the present invention relates to field of radio frequency integrated circuits, in particular to a kind of applied to the double of ultra wide band variable gain amplifier
Weight gain control circuit.
Background technique
Super-broadband tech is a kind of novel short distance high-speed radiocommunication technology, (reaches 1Gbit/ by transmission rate is high
S), the features such as ability of anti-multipath is strong, low in energy consumption, at low cost, penetration capacity is strong, low probability of intercept, has become short-distance wireless
The one preferred technique of communication, in personal area metworking, radar detection, the fields such as medicine detection and Wireless USB all have important
Application value.
For ultra-wideband communication system since its frequency span is big, range is wide, easy and other communication system crosstalks, so to super
The gain of system of broadband wireless communication and power have special requirement, and power is too big to interfere other communication systems, and power is too
Small noise coefficient will be too big.Therefore automatic growth control module (AGC) is one of important module of ultra-wideband communication system.
Ultra wide band variable gain amplifier is the important component of AGC module, is indispensable in ultra-wideband communication system
A part.On the one hand, it is desirable that it guarantees the stabilization of signal power with a wide range of gain ability of regulation and control.On the other hand in order to protect
Demonstrate,prove making full use of for frequency spectrum resource in entire ultrabroad band, it is desirable that there is good gain flatness in ultrabroad band.
Currently used load Distinct matrix technology, variable transconductance gain control, the gain based on attenuator
Control technology and gilbert (Gilbert) gain control etc. can effectively realize a wide range of gain control, still
It cannot be guaranteed good gain flatness；Multi-path choice gain control is the effective means of a guarantee flatness, still
It can not achieve continuous change in gain, and need to design multiple constant gain amplifying units, circuit structure is more complicated.For
The requirement for meeting Ultra-wideband Communication Technology, be badly in need of it is a kind of to be not only able to achieve a wide range of Continual Gain Actuator variable, but also there is good increasing
The gain control of beneficial flatness.
Summary of the invention
The object of the present invention is to provide a kind of dual gain control circuits can be realized suitable for realizing greatly in ultrabroad band
The dual gain control of range adjustable gain and good gain flatness, including an a wide range of gain-variable circuit and one
A Dynamic Signal gain-variable circuit.
The present invention adopts the following technical scheme:
A kind of dual gain control circuit is as shown in Figure 1, include that an a wide range of gain-variable circuit and a dynamic are believed
Number gain-variable circuit.
Bias current of the output electric current of a wide range of gain-variable circuit as constant gain amplifying unit.In control voltage
VctrlUnder the action of _ 1, the output electric current of a wide range of gain-variable circuit is changed correspondingly, to change constant gain amplifying unit
Current offset, realize in ultrabroad band a wide range of Continual Gain Actuator variation.A wide range of gain-variable circuit structure such as Fig. 2 institute
Show, the circuit of control output electric current is made of transistor, by changing the size of control voltage Vctrl_1, adjusts transistor
Working condition realizes the variation of output electric current, provides variable bias current for rear class constant gain amplifying unit.Because of electric current
Mirror structure can realize current control easily, to realize that the gain to rear class amplifying unit regulates and controls, can usually use current mirror
Structure is as output current control circuit.
This structure is able to achieve continuous a wide range of adjustable gain, but the wave that cannot effectively inhibit gain to generate with frequency variation
Dynamic, gain flatness, which is unable to get, in superwide range is effectively improved.Therefore the present invention is in a wide range of gain-variable circuit
On the basis of, introduce dynamic gain adjusted circuit.
On the one hand Dynamic Signal gain-variable circuit selects the biggish frequency band of gain fluctuation, on the other hand anti-in Dynamic Signal
Feedforward gain controls voltage VctrlUnder _ 2 control, change the size of active feedback impedance in the frequency band, to change in the frequency band
The dynamically feedback quantity of small signal realizes the fine tuning of this inband signal gain, final to realize gain flatness in ultrabroad band
Improve.Dynamic Signal gain-variable circuit structure is as shown in figure 3, capacitor C1, C2Filter is formed with feedback inductance L, selects gain
Fluctuate big frequency band, while C1And C2Also act as the effect of barrier direct current signal.By controlling voltage Vctrl_ 2 variation, adjustment
Feed circuit equivalent impedance ZfSize, realize the variation of feed circuit equivalent impedance, to control the feedback quantity of Dynamic Signal,
Realize fine gains.Equivalent variable impedance usually can be using PIN diode just on the lower side or work in variable resistance area
Transistor is realized.
Compared with available circuit, the invention has the following advantages that
Two kinds of gain control methods are combined together by dual gain control circuit innovation proposed by the present invention, are constituted double
Weight gain control, can guarantee simultaneously in a wide range of gain-variable and superwide range of ultra wide band variable gain amplifier
Good gain flatness；
Dynamic Signal gain-variable circuit of the invention has the ability that the gain for different frequency bands is adjusted, not shadow
The work for ringing a wide range of gain-variable circuit, nor affects on the direct current biasing of rear class gain constant amplifying unit；
Integrated circuit structure of the invention is relatively easy, and power consumption is lower.
Detailed description of the invention
Fig. 1 is the structure chart of dual gain control circuit of the invention；
Fig. 2 is a wide range of gain-variable circuit structure diagram of the invention；
Fig. 3 is the structure chart of Dynamic Signal gain-variable circuit of the invention；
Fig. 4 is one embodiment of gain control circuit of the present invention；
Fig. 5 is the result controlled only with a wide range of gain control circuit ultra wide band constant gain amplifying circuit；
Fig. 6 is the result controlled using dual gain control circuit ultra wide band constant gain amplifying circuit.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawing, the present invention is made
It is further described.
Fig. 4 is that the present invention is based on one embodiment of dual gain control circuit.It include: ultra wide band constant gain amplifier
With dual gain control circuit.
Constant gain amplifying circuit in the present embodiment includes: the first hetero-junctions Heterojunction Bipolar Transistors (Q1), the
Two Heterojunction Bipolar Transistors (Q2), third Heterojunction Bipolar Transistors (Q3), the 4th Heterojunction Bipolar Transistors
(Q4), the 5th Heterojunction Bipolar Transistors (Q5), first resistor (R1), second resistance (R2), 3rd resistor (R3), the 4th resistance
(R4), the 5th resistance (R5), the 6th resistance (R6), the 7th resistance (R7), first capacitor (C1), the second capacitor (C2), third capacitor
(C3), the 4th capacitor (C4), the 5th capacitor (C5), the 6th capacitor (C6), the first inductance (L1), the second inductance (L2), third inductance
(L3), the 4th inductance (L4), the 5th inductance (L5), the 6th inductance (L6), the 7th inductance (L7), voltage source (VCC).Wherein: first
Heterojunction Bipolar Transistors (Q1) base stage connect first capacitor (C simultaneously1) one end, the first inductance (L1) one end and
Second resistance (R2) one end, the first Heterojunction Bipolar Transistors (Q1) emitter connect first capacitor (C simultaneously1) it is another
One end and third inductance (L3) one end, the first Heterojunction Bipolar Transistors (Q1) collector connect the second heterogenous dual-pole
Transistor npn npn (Q2) emitter；Second Heterojunction Bipolar Transistors (Q2) collector simultaneously connect the second inductance (L2)
One end and the second capacitor (C2) one end, the second inductance (L2) the other end connect first resistor (R1) one end；Third hetero-junctions
Bipolar junction transistor (Q3) base stage simultaneously connect the second capacitor (C2) the other end, 3rd resistor (R3) one end；Third is heterogeneous
Tie bipolar junction transistor (Q3) emitter connect the 5th inductance (L5) one end, third Heterojunction Bipolar Transistors (Q3)
Collector connects the 5th capacitor (C simultaneously5) one end and the 4th inductance (L4) one end；4th Heterojunction Bipolar Transistors
(Q4) base stage simultaneously connect the 6th resistance (R6) one end and the 5th capacitor (C5) the other end, the 4th heterojunction bipolar is brilliant
Body pipe (Q4) emitter simultaneously connect the 4th capacitor (C4) one end and the 4th inductance (L4) the other end, the 4th hetero-junctions is double
Bipolar transistor (Q4) collector connect third capacitor (C simultaneously3) one end, the 6th inductance (L6) one end and the 7th electricity
Feel (L7) one end, the 6th resistance (R6) the other end connect the 7th inductance (L7) the other end；5th heterojunction bipolar crystal
Manage (Q5) base stage simultaneously connect the 4th resistance (R4) one end, the 5th resistance (R5) one end and third capacitor (C3) it is another
One end, the 5th Heterojunction Bipolar Transistors (Q5) emitter connect the 7th resistance (R7) one end, the 5th heterojunction bipolar
Transistor (Q5) collector simultaneously connect the 5th inductance (L5) the other end and the 6th capacitor (C6) one end；Second hetero-junctions
Bipolar junction transistor (Q2) base stage, first resistor (R1) the other end, 3rd resistor (R3) the other end, the 4th resistance (R4)
The other end and the 6th inductance (L6) the other end all connect voltage source (VCC)；Second resistance (R2) the other end, third inductance
(L3) the other end, the 5th resistance (R5) the other end, the 4th capacitor (C4) the other end, the 6th capacitor (C6) the other end with
And the 7th resistance (R7) the other end all connect ground terminal；Signal input part RF_in the first inductance of connection (L1) the other end,
Five Heterojunction Bipolar Transistors (Q5) emitter and the 7th resistance (R7) one end connection signal output end RF_out.This reality
Apply the higher gain in constant gain amplifying circuit realization 3~10GHz bandwidth of example.
The dual gain control circuit of the present embodiment includes a wide range of gain-variable circuit and Dynamic Signal gain-variable circuit.
A wide range of gain-variable circuit includes: the 6th Heterojunction Bipolar Transistors (Q6), the 7th heterojunction bipolar it is brilliant
Body pipe (Q7), the 8th resistance (R8), the 9th resistance (R9), the tenth resistance (R10), eleventh resistor (R11), first control voltage
(Vctrl_1).Wherein the 6th Heterojunction Bipolar Transistors (Q6) base stage simultaneously connect the 7th Heterojunction Bipolar Transistors
(Q7) base stage and the tenth resistance (R10) one end, the 6th Heterojunction Bipolar Transistors (Q6) emitter connect the 8th resistance
(R8) one end；7th Heterojunction Bipolar Transistors (Q7) emitter connect the 9th resistance (R9) one end；Tenth resistance
(R10) the other end connection first control voltage (Vctrl_1)；The collector connection the 5th of 7th heterobipolar transistor (Q7)
The base stage of Heterojunction Bipolar Transistors (Q5), one end of eleventh resistor and third capacitor one end；8th resistance (R8)
The other end, the 9th resistance (R9) the other end, eleventh resistor (R11) the other end connect ground terminal；6th heterojunction bipolar
Transistor (Q6) collector connect voltage source (VCC).Pass through the first control voltage (Vctrl_ 1) to a wide range of gain-variable circuit
The control of the bias voltage of middle transistor Q6 and Q7 obtains the output electric current with control voltage linear relationship, to change perseverance
The bias current for determining gain amplifying circuit realizes the control of gain.
Dynamic Signal gain-variable circuit includes: the 7th capacitor (C7), the 8th capacitor (C8), feedback inductance (Lf), diode
(PIN), the second control voltage (Vctrl_2).Wherein the 7th capacitor (C7) one end connection the second capacitor (C2) the other end and the
Three Heterojunction Bipolar Transistors (Q3) base stage；Wherein the 7th capacitor (C7) the other end connect feedback inductance (Lf) one end；
Feedback inductance (Lf) other end connection diode (PIN) cathode and ground terminal；Anode the 8th capacitor of connection of diode (PIN)
(C8) one end and second control voltage (Vctrl_2)；8th capacitor (C8) the other end connect third heterojunction bipolar crystal
Manage the collector of (Q3).Diode (PIN) changes with the change of bias voltage under forward bias, so by changing second
Control voltage (Vctrl_ 2) equivalent impedance of PIN diode is controlled, and the equivalent impedance of PIN diode is with the second control voltage
(Vctrl_ 2) increase and reduce, the equivalent impedance of entire feedback branch reduces therewith, and Dynamic Signal feedback quantity increases, constant amplification
The gain of circuit just will increase, to realize gain control；Pass through the 7th capacitor (C7), the 8th capacitor (C8) and feedback inductance
(Lf) composition bandpass filter, the biggish frequency band of change in gain is selected, gain regulation is carried out in selected frequency band, it is final to realize
Good gain flatness.
Fig. 5 is to the progress gain control of constant gain amplifying circuit only with a wide range of gain-variable circuit as a result, 3
Under~10GHz frequency, with the first control voltage (Vctrl_ 1) 3V is changed to from 0.5V, gain variation range is 10dB or so；The
One control voltage (Vctrl_ 1) be 0.5V when, gain flatness be ± 7.5dB；When first control voltage is 3V, gain flatness
For ± 10.5dB.
Fig. 6 is to the progress gain control of constant gain amplifying circuit using dual gain control circuit as a result, when generous
When enclosing gain-variable circuit and Dynamic Signal gain-variable circuit collective effect, under 3~10GHz frequency, the second control voltage
(Vctrl_ 2) be 5V when, first control voltage (Vctrl_ 1) 3V is changed to from 0.5V, gain variation range is 10dB or so, gain
Flatness≤± 1.5dB.Compared with Fig. 4, gain variation range is suitable, and gain flatness improves 12dB~18dB.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
The general principles defined herein can be real in other embodiments without departing from the spirit or scope of the present invention
It is existing.
Claims (1)
1. a kind of dual gain control circuit of ultra wide band characterized by comprising a wide range of gain-variable in a ultrabroad band
Dynamic Signal gain-variable circuit in circuit and a ultrabroad band；It wherein exports electric current and controls the big of voltage linear relationship
The base bias of range gain-variable circuit offer rear class constant gain amplifying unit；Frequency band is selected by LC bandpass filter,
Change the Dynamic Signal gain-variable circuit of entire feedback branch equivalent impedance as permanent by adjusting PIN diode bias voltage
Determine the fine gains in the feed circuit realization special frequency band of multi-gain amplification unit；
Wherein in ultrabroad band a wide range of gain-variable circuit include: the 6th Heterojunction Bipolar Transistors (Q6), it is the 7th heterogeneous
Tie bipolar junction transistor (Q7), the 8th resistance (R8), the 9th resistance (R9), the tenth resistance (R10), eleventh resistor (R11), the
One control voltage (Vctrl_1), wherein the base stage of the 6th Heterojunction Bipolar Transistors (Q6) connects the 7th hetero-junctions pair simultaneously
One end of the base stage of bipolar transistor (Q7) and the tenth resistance (R10), the emitter of the 6th Heterojunction Bipolar Transistors (Q6)
Connect one end of the 8th resistance (R8)；The emitter of 7th Heterojunction Bipolar Transistors (Q7) connects the one of the 9th resistance (R9)
End；The first control voltage (Vctrl_1) of other end connection of tenth resistance (R10)；7th heterobipolar transistor (Q7)
Collector connects base stage, one end of eleventh resistor and one end of third capacitor of the 5th Heterojunction Bipolar Transistors (Q5)；
The other end of 8th resistance (R8), the other end of the 9th resistance (R9), eleventh resistor (R11) the other end connect ground terminal；
The collector of 6th Heterojunction Bipolar Transistors (Q6) connects voltage source (VCC), passes through the first control voltage (Vctrl_1)
Control to the bias voltage of transistor Q6 and Q7 in a wide range of gain-variable circuit obtains and control voltage linear relationship
It exports electric current and realizes the control of gain to change the bias current of constant gain amplifying circuit；Dynamic is believed in ultrabroad band
Number gain-variable circuit includes: the 7th capacitor (C7), the 8th capacitor (C8), feedback inductance (Lf), diode (PIN), the second control
Voltage (Vctrl_2) processed, wherein the other end and third hetero-junctions of one end connection the second capacitor (C2) of the 7th capacitor (C7) are double
The base stage of bipolar transistor (Q3)；Wherein one end of other end connection feedback inductance (Lf) of the 7th capacitor (C7)；Feedback inductance
(Lf) other end connection diode (PIN) cathode and ground terminal；The one of anode the 8th capacitor (C8) of connection of diode (PIN)
End and the second control voltage (Vctrl_2)；The other end of 8th capacitor (C8) connects third Heterojunction Bipolar Transistors (Q3)
Collector；Constant gain amplifying unit includes: the first Heterojunction Bipolar Transistors (Q1), and the second heterojunction bipolar is brilliant
Body pipe (Q2), third Heterojunction Bipolar Transistors (Q3), the 4th Heterojunction Bipolar Transistors (Q4), the 5th heterogenous dual-pole
Transistor npn npn (Q5), first resistor (R1), second resistance (R2), 3rd resistor (R3), the 4th resistance (R4), the 5th resistance
(R5), the 6th resistance (R6), the 7th resistance (R7), first capacitor (C1), the second capacitor (C2), third capacitor (C3), the 4th electricity
Hold (C4), the 5th capacitor (C5), the 6th capacitor (C6), the first inductance (L1), the second inductance (L2), third inductance (L3), the 4th
Inductance (L4), the 5th inductance (L5), the 6th inductance (L6), the 7th inductance (L7), voltage source (VCC), in which: the first hetero-junctions
The base stage of bipolar junction transistor (Q1) connects one end of first capacitor (C1), one end of the first inductance (L1) and the second electricity simultaneously
Hinder the one end of (R2), the emitter of the first Heterojunction Bipolar Transistors (Q1) connect simultaneously first capacitor (C1) the other end and
The collector of one end of third inductance (L3), the first Heterojunction Bipolar Transistors (Q1) connects the second heterojunction bipolar crystal
Manage the emitter of (Q2)；The collector of second Heterojunction Bipolar Transistors (Q2) connect simultaneously the second inductance (L2) one end and
One end of second capacitor (C2), one end of other end connection first resistor (R1) of the second inductance (L2)；Third heterogenous dual-pole
The base stage of transistor npn npn (Q3) connects one end of the other end of the second capacitor (C2), 3rd resistor (R3) simultaneously；Third hetero-junctions
The emitter of bipolar junction transistor (Q3) connects one end of the 5th inductance (L5), the collection of third Heterojunction Bipolar Transistors (Q3)
Electrode connects one end of the 5th capacitor (C5) and one end of the 4th inductance (L4) simultaneously；4th Heterojunction Bipolar Transistors (Q4)
Base stage simultaneously connect the 6th resistance (R6) one end and the 5th capacitor (C5) the other end, the 4th Heterojunction Bipolar Transistors
(Q4) emitter connects one end of the 4th capacitor (C4) and the other end of the 4th inductance (L4), the 4th heterojunction bipolar simultaneously
The collector of transistor (Q4) connects one end of third capacitor (C3), one end of the 6th inductance (L6) and the 7th inductance simultaneously
(L7) one end, the other end of the 6th resistance (R6) connect the other end of the 7th inductance (L7)；5th heterojunction bipolar crystal
The base stage for managing (Q5) connects the another of one end of the 4th resistance (R4), one end of the 5th resistance (R5) and third capacitor (C3) simultaneously
One end, the emitter of the 5th Heterojunction Bipolar Transistors (Q5) connect one end of the 7th resistance (R7), the 5th heterogenous dual-pole
The collector of transistor npn npn (Q5) connects the other end of the 5th inductance (L5) and one end of the 6th capacitor (C6) simultaneously；Second is heterogeneous
Tie the other end, the 4th resistance of the base stage of bipolar junction transistor (Q2), the other end of first resistor (R1), 3rd resistor (R3)
(R4) other end of the other end and the 6th inductance (L6) all connects voltage source (VCC)；The other end of second resistance (R2), third
The other end of inductance (L3), the other end of the 5th resistance (R5), the other end of the 4th capacitor (C4), the 6th capacitor (C6) it is another
The other end of end and the 7th resistance (R7) all connects ground terminal；Signal input part RF_in the first inductance of connection (L1) it is another
End, the emitter of the 5th Heterojunction Bipolar Transistors (Q5) and one end connection signal output end RF_ of the 7th resistance (R7)
out。
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| CN201610589625.5A CN106208997B (en) | 2016-07-25 | 2016-07-25 | The dual gain control circuit of ultra wide band |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610589625.5A CN106208997B (en) | 2016-07-25 | 2016-07-25 | The dual gain control circuit of ultra wide band |
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| CN106208997A CN106208997A (en) | 2016-12-07 |
| CN106208997B true CN106208997B (en) | 2019-04-12 |
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| US7038542B2 (en) * | 2003-10-22 | 2006-05-02 | Kabushiki Kaisha Toshiba | Variable gain amplifier |
| CN1770627B (en) * | 2004-11-05 | 2010-05-05 | 苏州中科半导体集成技术研发中心有限公司 | Automatic feedback control method for self-adaptive setover variable gain low noise amplifier |
| CN103368506B (en) * | 2013-07-31 | 2016-01-27 | 中国科学院微电子研究所 | Broadband Variable Gain Amplifier |
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