CN207995097U - A kind of light-receiving chip - Google Patents
A kind of light-receiving chip Download PDFInfo
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- CN207995097U CN207995097U CN201820007302.5U CN201820007302U CN207995097U CN 207995097 U CN207995097 U CN 207995097U CN 201820007302 U CN201820007302 U CN 201820007302U CN 207995097 U CN207995097 U CN 207995097U
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- amplifier
- attenuator
- light
- receiving chip
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Abstract
The utility model discloses a kind of light-receiving chips, including：Trans-impedance amplifier, attenuator, output amplifier, trans-impedance amplifier are connect with attenuator, and attenuator is connect with output amplifier, further include：Driving amplifier, driving amplifier is arranged between attenuator and output amplifier, photodiode signal input outside trans-impedance amplifier reception, then exports after the processing of attenuator, driving amplifier and output amplifier, and signal transmission form is differential transfer mode.The utility model has level of integrated system high, and high gain, in 50 1000MHz operating frequency ranges, maximum gain can reach 40dB or more, and this guarantees under the luminous power of 15dBm, output level can reach 70dBuV；Using differential signal transmission mode, there is very high sensitivity, system structure is simple, at low cost, applied widely, has good practicability.
Description
Technical field
The utility model is related to a kind of light-receiving chips, belong to optical communication equipment technology.
Background technology
Light-receiving chip is the key component of fiber optic communication and hybrid fiber coax (HFC) network, logical in optical fiber
In communication network, the optical signal in the optical fiber detected is carried out opto-electronic conversion by PIN photodiode, becomes current signal, light connects
It receives movement piece and current signal is converted into the amplification that voltage signal is carried out at the same time signal.
Since China has a vast territory, in wast rural area remote districts, since the distance of fiber optic network is very long, light is in the transmission
Inevitable generation decaying so that the luminous power that terminal user receives is very low, usually less than -10dBm, sometimes even only
There is -15dBm.However according to the requirement of national standard, signal level will reach 70dBuV or more.The light of hfc plant connects currently on the market
The gain for receiving chip is usually 30dB or so, and in the case of -15dBm input optical powers, output signal level is generally not achieved
70dBuV, maximum is also just in 65dBuV or so.In practical applications, it needs additionally to increase first stage amplifier, can just reach and want
The output level asked, it is complicated, it implements of high cost.
Therefore, a kind of light-receiving chip that can reduce cost again while meeting low power optical receiving demand of development is
It is very necessary, and the equipment also has important application prospect.
Invention content
The problem of the utility model exists for the above-mentioned prior art makes improvements, and discloses a kind of light-receiving chip.Energy
It is enough to reduce cost again while meeting low power optical receiving demand.
In order to realize above-mentioned target, technical solution is used by the utility model：
A kind of light-receiving chip, which is characterized in that including：Trans-impedance amplifier (1), attenuator (2), output amplifier (3),
The trans-impedance amplifier (1) connect with the attenuator (2), and the attenuator (2) connect with the output amplifier (3),
It is characterized in that, further includes：Driving amplifier (4), the driving amplifier (4) are arranged in the attenuator (2) and the output
Between amplifier (3), the photodiode signal input outside trans-impedance amplifier (1) reception, then through the attenuator
(2), it is exported after driving amplifier (4) and output amplifier (3) processing.
Light-receiving chip above-mentioned, which is characterized in that the trans-impedance amplifier (1), attenuator (2), driving amplifier (4)
Signal transmission form with output amplifier (3) is differential transfer mode.
Light-receiving chip above-mentioned, which is characterized in that the input of the trans-impedance amplifier (1) is current signal, through described
Voltage signal output is converted to after trans-impedance amplifier (1) amplification.
Light-receiving chip above-mentioned, which is characterized in that the trans-impedance amplifier (1), attenuator (2), output amplifier (3)
It is made of GaAs PHEMT-technology with driving amplifier (4).
Light-receiving chip above-mentioned, which is characterized in that the attenuator (2) is T-shaped structure or π shape structures.
Light-receiving chip above-mentioned, which is characterized in that the control signal of the attenuator (2) is that voltage variable controls signal
Or digital controlled signal.
Light-receiving chip above-mentioned, which is characterized in that the attenuator (2) includes several cascade signal attenuators.
A kind of optical receiver module based on aforementioned light-receiving chip, which is characterized in that including light-receiving chip and balun
(5), the output end of the light-receiving chip is connect with the balun (5).
Compared with prior art, the utility model is beneficial in that：
(1) level of integrated system is high, and high gain, in 50-1000MHz operating frequency ranges, maximum gain can reach
40dB or more, this guarantees under the luminous power of -15dBm, output level can reach 70dBuV；
(2) signal transmission uses differential mode, has very high sensitivity, system structure is simple, at low cost, the scope of application
Extensively, there is good practicability.
Description of the drawings
Fig. 1 is the system principle diagram of light-receiving chip in the prior art；
Fig. 2 is the system principle diagram of a specific embodiment of the light-receiving chip of the present invention；
Fig. 3 is gain measured value of the present invention under -15dBm luminous powers.
Wherein：
1- trans-impedance amplifier 2- attenuators
3- output amplifier 4- driving amplifiers
5- baluns.
Specific implementation mode
Specific introduce is made to the utility model below in conjunction with the drawings and specific embodiments.
Referring to FIG. 1, FIG. 2 and FIG. 3, the light-receiving chip of the utility model, including：Trans-impedance amplifier 1, attenuator 2, output
Amplifier 3, trans-impedance amplifier 1 are connect with attenuator 2, and attenuator 2 is connect with output amplifier 3, further includes：Driving amplifier 4,
Driving amplifier 4 is arranged between attenuator 2 and output amplifier 3, and trans-impedance amplifier 1 receives external photodiode signal
Then input exports after the processing of attenuator 2, driving amplifier 4 and output amplifier 3.
As a preferred solution, the signal of trans-impedance amplifier 1, attenuator 2, driving amplifier 4 and output amplifier 3
Transmission mode is differential transfer mode, and differential signal transmission mode can improve the CTB and noise objective of light-receiving chip, help
In raising receiving sensitivity.
Table 1：Output level in -15dBm luminous powers and MER values
| Frequency (MHz) | Output level (dBuV) | MER(dB) |
| 112.25 | 78.9 | 33.5 |
| 200.25 | 78.9 | 33.6 |
| 328.25 | 78.6 | 33.4 |
| 448.25 | 78.2 | 33.3 |
| 543.25 | 77.3 | 32.8 |
| 602 | 77.2 | 32.9 |
| 706 | 77.7 | 33.3 |
| 802 | 77.1 | 33.1 |
| 906 | 76.2 | 32.2 |
As a preferred solution, the input of trans-impedance amplifier 1 is current signal, is turned after the amplification of trans-impedance amplifier 1
It is changed to voltage signal output.
As a preferred solution, trans-impedance amplifier 1, attenuator 2, output amplifier 3 and driving amplifier 4 are arsenic
Gallium pseudo-crystal device with high electron mobility technique is made.
As a preferred solution, attenuator 2 is T-shaped structure or π shape structures.
As a preferred solution, the control signal of attenuator 2 is that voltage variable controls signal or digital controlled signal,
Voltage variable control signal refers to control signal of continuous, the variable voltage as attenuator 2, usually 0-3V or 0-
5V；Digital controlled signal refers to the number combination that the control signal of attenuator 2 is one group 0101, by connecting differential declines device 2
Reach desired attenuation value, for example 3 digital controlled signals have 000-111,8 number combinations, 8 kinds of realization is different to decline
Subtrahend value.
As a preferred solution, attenuator 2 include a signal attenuator, need big attenuation range when
It waits, can realize big attenuation range with multiple sub- cascade modes of attenuator.
A kind of optical receiver module based on aforementioned light-receiving chip, including light-receiving chip and balun 5, light-receiving chip
Output end is connect with balun 5, and it is defeated to be converted into single-ended signal by two output termination baluns 5 of output amplifier 3 for differential signal
Go out, the CTB and noise objective of light-receiving chip can be improved, help to improve receiving sensitivity.
It should be noted that the above is only the preferred embodiment of the present invention, it is not new to limit this practicality
Type, within the spirit and principle of the utility model, any modification, equivalent replacement, improvement and so on should be included in this
Within the protection domain of utility model.
Claims (8)
1. a kind of light-receiving chip, including：Trans-impedance amplifier (1), attenuator (2), output amplifier (3), it is described to amplify across resistance
Device (1) is connect with the attenuator (2), and the attenuator (2) connect with the output amplifier (3), which is characterized in that also wraps
It includes：Driving amplifier (4), the driving amplifier (4) are arranged between the attenuator (2) and the output amplifier (3),
Photodiode signal input outside trans-impedance amplifier (1) reception, then through the attenuator (2), driving amplifier
(4) and after output amplifier (3) processing it exports.
2. light-receiving chip according to claim 1, which is characterized in that the trans-impedance amplifier (1), is driven attenuator (2)
The signal transmission form of dynamic amplifier (4) and output amplifier (3) is differential transfer mode.
3. light-receiving chip according to claim 1, which is characterized in that the input of the trans-impedance amplifier (1) is electric current
Signal is converted to voltage signal output after the trans-impedance amplifier (1) amplification.
4. light-receiving chip according to claim 1, which is characterized in that the trans-impedance amplifier (1), attenuator (2), defeated
Go out amplifier (3) and driving amplifier (4) is made of GaAs PHEMT-technology.
5. light-receiving chip according to claim 1, which is characterized in that the attenuator (2) is T-shaped structure or π shape knots
Structure.
6. light-receiving chip according to claim 1, which is characterized in that the control signal of the attenuator (2) is voltage
Controlled variable signal or digital controlled signal.
7. light-receiving chip according to claim 1, which is characterized in that the attenuator (2) includes that several are cascade
Signal attenuator.
8. a kind of optical receiver module based on any one of the preceding claims 1-7 light-receiving chips, which is characterized in that including
Light-receiving chip and balun (5), the output end of the light-receiving chip are connect with the balun (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820007302.5U CN207995097U (en) | 2018-01-03 | 2018-01-03 | A kind of light-receiving chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820007302.5U CN207995097U (en) | 2018-01-03 | 2018-01-03 | A kind of light-receiving chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207995097U true CN207995097U (en) | 2018-10-19 |
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ID=63819922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820007302.5U Active CN207995097U (en) | 2018-01-03 | 2018-01-03 | A kind of light-receiving chip |
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| Country | Link |
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| CN (1) | CN207995097U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110380790A (en) * | 2019-08-16 | 2019-10-25 | 平湖新纳通信技术有限公司 | The reception device and its method of reseptance of extra low optical power receiver |
-
2018
- 2018-01-03 CN CN201820007302.5U patent/CN207995097U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110380790A (en) * | 2019-08-16 | 2019-10-25 | 平湖新纳通信技术有限公司 | The reception device and its method of reseptance of extra low optical power receiver |
| CN110380790B (en) * | 2019-08-16 | 2024-03-26 | 平湖新纳通信技术有限公司 | Receiving device and receiving method of ultra-low optical power receiver |
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