CN106208983A - Towards time-multiplexed multimode power amplifier module, chip and communication terminal - Google Patents
Towards time-multiplexed multimode power amplifier module, chip and communication terminal Download PDFInfo
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- CN106208983A CN106208983A CN201610517854.6A CN201610517854A CN106208983A CN 106208983 A CN106208983 A CN 106208983A CN 201610517854 A CN201610517854 A CN 201610517854A CN 106208983 A CN106208983 A CN 106208983A
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- high frequency
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
Abstract
The invention discloses a kind of towards time-multiplexed multimode power amplifier module, chip and communication terminal.This multimode power amplifier module is under time-multiplexed mode of operation, control circuit sends offset signal according to baseband signal to low-frequency power amplifier or high frequency power amplifier, is amplified controlling low-frequency power amplifier or the high frequency power amplifier low frequency radio frequency signal to being accessed or high frequency radio signals；Transmit-receive switch selects signal according to mode of operation, selects corresponding mode of operation launch or receive.The present invention carries out multiplexing according to different mode to power amplifier path, the different working modes making height frequency range can share power amplifier path under the adjustment of control circuit, and allow bias voltage or bias current realize multiple value with the change of baseband signal in time division duplex mode, thus simplify the design complexities of power amplifier module, reduce the cost that relevant design realizes.
Description
Technical field
The present invention relates to a kind of towards time-multiplexed multimode power amplifier module, also relate to this multimode power and put
The control method of big device module, further relates to include chip and the communication terminal of this multimode power amplifier module, belongs to channel radio
Letter technical field.
Background technology
Currently, 4G LTE comes into the large-scale promotion stage.But all standing i.e. mobile broadband voice realizing VoLTE should
With, and allow traditional circuit switching step down from the stage of history, but it is a considerably long process.This is because on the one hand, VoLTE relates to
More new technique, needs necessary test and test；On the other hand, the deployment of IMS (IP Multimedia System) and integrated needs
Regular hour, the equipment of existing network is also required to progressively upgrade and transform.
In quite a long time section, LTE network itself is not the most provided that speech business, and phonological component needs to utilize
3G/2G network, again because 3G WCDMA/CDMA relates to the patent fee problem of high pass, so platform vendor such as Lian Fake,
What spreadtrum, connection core science and technology were all released is the scheme of phonological component application 2G.So 2G GSM is in 4G communicates, considerably long one
It is requisite in the section time.To this end, mobile operator is wideling popularize three moulds and the scheme of five moulds, three moulds refer mainly to
GSM/TD_SCDMA/TDD_LTE Three models, five moulds refer mainly to GSM/TD_SCDMA/TDD_LTE/WCDMA/FDD_LTE five kinds
Pattern, is not difficult to find out either three moulds or five moulds all be unable to do without GSM/EDGE/TD_SCDMA/TDD_LTE several modes.
In above-mentioned several modes, TD-SCDMA and TDD-LTE both time division multiplexings are mainly used in data transmission,
So power consumption problem can ratio more serious.The power consumption of multimode power amplifier module is concentrated mainly on again on power amplifier chip.
If able to carry out performance and the optimised power consumption of power amplifier chip under both time division multiplexings, it is possible to realize many
The performance of mould power amplifier module and the optimization of power consumption.
Summary of the invention
Primary technical problem to be solved by this invention is to provide a kind of towards time-multiplexed multimode power amplifier
Module.
Another technical problem to be solved by this invention is to provide the control method of a kind of multimode power amplifier module.
Another technical problem to be solved by this invention is to provide a kind of core including this multimode power amplifier module
Sheet and communication terminal.
For achieving the above object, the present invention uses following technical scheme:
First aspect according to embodiments of the present invention, it is provided that a kind of towards time-multiplexed multimode power amplifier module,
Including low-frequency power amplifier path, radio frequency power amplifier path, control circuit and transmit-receive switch；
Described low-frequency power amplifier path includes that low frequency input matching network, low-frequency power amplifier and the low frequency of sequential series is defeated
Go out matching network；Described low frequency input matching network is used for accessing low frequency radio frequency signal, it is achieved impedance matching；Described low frequency power
Amplifier is for realizing the amplification to described low frequency radio frequency signal；Described low frequency output matching network is for realizing the impedance of low frequency
Conversion, with according to the low frequency radio frequency signal output low frequency output after amplifying；
Described radio frequency power amplifier path includes that high frequency input matching network, high frequency power amplifier and the high frequency of sequential series is defeated
Go out matching network；Described high frequency input matching network is used for accessing high frequency radio signals, it is achieved impedance matching；Described high frequency power
Amplifier is for realizing the amplification to described high frequency radio signals；Described high frequency output matching network is for realizing the impedance of high frequency
Conversion, with according to the high frequency radio signals output output high frequency power after amplifying；
Described control circuit, under time-multiplexed mode of operation, according to the size of baseband signal, produces different biasings
Signal, penetrates in order to bias described low-frequency power amplifier or the high frequency power amplifier low frequency radio frequency signal to being accessed or high frequency
Frequently signal is amplified；Described transmit-receive switch selects signal according to mode of operation, select corresponding mode of operation to carry out launching or
Receive.
The most more preferably, described time-multiplexed mode of operation is TD_SCDMA and/or TDD_LTE mode of operation.
The most more preferably, in described control circuit, the negative input end of described baseband signal input operational amplifier, described
The outfan of operational amplifier connects the grid of described transistor；
The source electrode Access Control power supply of described transistor, drain electrode exports described offset signal.
The most more preferably, in described control circuit, described baseband signal and described reference voltage are respectively connected to multichannel mould
Intending positive input terminal and the negative input end of switch, the outfan of described multiway analog switch accesses the negative input end of operational amplifier.
The most more preferably, described multiway analog switch at least two paths, being turned on and off by baseband signal of path
Determine with mode of operation.
The most more preferably, in described control circuit, the drain electrode of described transistor is through the first resistance and the second resistance string
Coupling ground, the junction point of described first resistance and described second resistance connects the positive input terminal of described operational amplifier.
The most more preferably, in described control circuit, at junction point and described operational amplifier the most defeated of adjacent resistor
Entering and be provided with gating switch between end, described gating switch changes on off operating mode according to described baseband signal or mode of operation.
The most more preferably, in described control circuit, the drain electrode of described transistor connects through the multiple resistance being serially connected
Ground；The junction point of adjacent resistor connects the positive input terminal of described operational amplifier.
The most more preferably, described low-frequency power amplifier path at least one-level amplifying circuit, described radio frequency power amplifier path is at least
One-level amplifying circuit.
The most more preferably, described transmit-receive switch is positioned at antenna end；Described transmit-receive switch is SPXT, and wherein X is not less than 4.
Second aspect according to embodiments of the present invention, it is provided that the control method of a kind of multimode power amplifier module, including
Following steps:
Thering is provided offset signal to low-frequency power amplifier path, its size is determined by size and the mode of operation of baseband signal；
Thering is provided offset signal to radio frequency power amplifier path, its size is determined by size and the mode of operation of baseband signal.
The most more preferably, described offset signal is controlled by baseband signal and mode of operation, linearly or connects with baseband signal
Near-linear changes.
Or, described offset signal is controlled, with the stepped change of baseband signal by baseband signal and mode of operation.
Or, described offset signal is controlled by baseband signal and mode of operation, is step-like linear change with baseband signal.
The third aspect according to embodiments of the present invention, it is provided that a kind of chip with multimode power amplifier module, this core
Sheet includes above-mentioned any one towards time-multiplexed multimode power amplifier module.
Fourth aspect according to embodiments of the present invention, it is provided that a kind of communication terminal with multimode power amplifier module,
This communication terminal includes above-mentioned any one towards time-multiplexed multimode power amplifier module.
Compared with prior art, multimode power amplifier module provided by the present invention, chip and communication terminal, according to
In communication protocol, the frequency range feature under different mode, carries out sufficient multiplexing to power amplifier path so that the just different works of frequency range
Operation mode can share power amplifier path under the adjustment of control circuit, and allows bias voltage or biased electrical in time division duplex mode
Stream realizes multiple value with the change of baseband signal, thus simplifies the design complexities of power amplifier module, reduces
The cost that relevant design realizes.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of the multimode power amplifier module shown in embodiment；
Fig. 2 is the circuit diagram of the multimode power amplifier module shown in embodiment；
Fig. 3 is embodiment one schematic diagram controlling power amplifier bias signal according to baseband signal；
Fig. 4 is the schematic diagram of relation between offset signal Reg shown in embodiment one and baseband signal Vramp；
Fig. 5 is embodiment two schematic diagram controlling power amplifier bias signal according to baseband signal；
Fig. 6 is the schematic diagram of relation between offset signal Reg shown in embodiment two and baseband signal Vramp；
Fig. 7 is embodiment three schematic diagram controlling power amplifier bias signal according to baseband signal；
Fig. 8 is the schematic diagram of relation between offset signal Reg shown in embodiment three and baseband signal Vramp.
Detailed description of the invention
With specific embodiment, the technology contents of the present invention is described in further detail below in conjunction with the accompanying drawings.
Firstly the need of explanation, in various embodiments of the present invention, involved communication terminal refers to move
The computer equipment of the plurality of communication schemes such as use in environment, supports GSM, EDGE, TD_SCDMA, TDD_LTE, FDD_LTE, bag
Include mobile phone, notebook computer, panel computer, vehicle-mounted computer etc..Additionally, this multimode power amplifier module is also applied for it
The occasion of his Multimodal technology application, the communication base station etc. of such as compatible plurality of communication schemes.
As described in the background of the present invention, either three moulds or five mould schemes all include GSM/TD_SCDMA/TDD_
LTE Three models, the finiteness covered due to LTE network again, in three current mould/five mould schemes, remain that compatible EDGE
Pattern, in its medium-high frequency GSM, the frequency of PCS section is 1850MHz～1910MHz, the frequency range of TD_SCDMA be 1880MHz～
1920MHz, 2010MHz～2025MHz, the B39 frequency range of TDD_LTE is 1880MHz～1920MHz, these three from frequency
Frequency under pattern is relatively, and additionally the frequency range of GSM and EDGE is completely superposed, and these provide for circuit multiplexer
Probability.Power amplifier module works in different modes, the requirement to output, gain, the linearity and operating current
It is different.And the as above index of power amplifier module is to be determined by the power amplifier in module, so by merit
The gain network of rate amplifier, collector voltage and bias voltage (electric current) being optimized in different modes, it is possible to achieve
Output, gain, electric current and the optimization of linear aspect.
Wherein, under TD_SCDMA and TDD_LTE both time division multiplexings, power amplifier chip should be located all the time
In linear prower amplifier state.In the case of multimode power amplifier module output is higher, certain in order to ensure
The linearity, the bias current required for power amplifier chip is more relatively large.In this case it is necessary to control circuit provides
Offset signal Reg the most relatively large, thus achieve the optimization of multimode power amplifier module performance.And when multimode merit
Rate amplifier module output ratio is time relatively low, and at this moment power amplifier chip has only to relatively low bias current and i.e. can realize
Enough linearities.In this case, if offset signal Reg that control circuit provides is more relatively small, power amplifier
Bias current required for chip just can lower, thus realize multimode power amplifier module and reduce the purpose of power consumption.
Fig. 1 is the structured flowchart of the multimode power amplifier module shown in embodiment.This multimode power amplifier module bag
Include: low-frequency power amplifier path, radio frequency power amplifier path, control circuit and transmit-receive switch.Here low-frequency power amplifier path at least one-level
Amplifying circuit, radio frequency power amplifier path the most at least one-level amplifying circuit.
Wherein, low-frequency power amplifier path includes low frequency input matching network, low-frequency power amplifier and the low frequency of sequential series
Output matching network.Low frequency input matching network, is provided with low frequency input terminal, is used for accessing low frequency radio frequency signal, it is achieved impedance
Join.Low-frequency power amplifier, accesses the low frequency radio frequency signal of low frequency input matching network output, for realizing low frequency radio frequency letter
Number amplification.Low frequency output matching network, for realizing the impedance transformation of low frequency, with defeated according to the low frequency radio frequency signal after amplifying
Go out low frequency output.
Radio frequency power amplifier path includes high frequency input matching network, high frequency power amplifier and the high frequency output of sequential series
Distribution network.High frequency input matching network, is provided with high frequency input terminal, is used for accessing high frequency radio signals, it is achieved impedance matching.High frequency
Power amplifier, accesses the high frequency radio signals of high frequency input matching network output, puts high frequency radio signals for realization
Greatly.High frequency output matching network, for realizing the impedance transformation of high frequency, with according to the high frequency radio signals output high frequency after amplifying
Output.
Control circuit is the core control part of this multimode power amplifier module.It is defeated that this control circuit is provided with at least three
Enter end, be respectively used to Access Control power supply Vbat, baseband signal Vramp and mode of operation and select signal.Control circuit respectively with
Low-frequency power amplifier is connected with high frequency power amplifier, selects signal, to low frequency according to baseband signal Vramp and mode of operation
Power amplifier or high frequency power amplifier send amplifier control signal.By this control signal, put controlling low frequency power
Low frequency radio frequency signal to being accessed of big device or high frequency power amplifier or high frequency radio signals are amplified and optimize.
Transmit-receive switch is connected respectively with control circuit, low frequency output matching network and high frequency output matching network；Transmitting-receiving is opened
Close, for selecting signal according to mode of operation, select corresponding mode of operation launch or receive.
Above-mentioned multimode power amplifier module, according to the frequency range feature under different mode in communication protocol, to power amplifier path
Carry out sufficient multiplexing so that just the different working modes of frequency range can share power amplifier path under the adjustment of control circuit,
Thus simplify the design complexities of power amplifier module, reduce the cost that relevant design realizes, and there is simple spirit
Live, it is easy to accomplish etc. advantage.
Fig. 2 is the circuit theory diagrams of the multimode power amplifier module shown in embodiment.As in figure 2 it is shown, the present embodiment institute
The multimode power amplifier module illustrated, design work is under GSM, EDGE, TD_SCDMA, TDD_LTE pattern.Based on above
Analyze, GSM mode and EDGE pattern include high frequency mode and low frequency mode the most respectively.Therefore, this both of which is divided into
Low frequency GSM mode, high frequency GSM mode and low frequency EDGE pattern and high frequency E DGE pattern.
As in figure 2 it is shown, in the present embodiment, its external pin of this multimode power amplifier module includes: 109 is low frequency merit
Put the low frequency input terminal of path, be used for accessing low frequency GSM/EDGE radiofrequency signal.110 is the control power supply electricity of control circuit 104
Source incoming end, for Access Control power supply Vbat.111 is TX_enble interface, for accessing the enable letter of TX for control circuit
Number.113/114/115 is logical signal B0/B1/B2 interface, for accessing B0/B1/B2 logical signal for control circuit.This B0/
The signal that enables of tri-logical signals of B1/B2 and TX together constitutes the mode of operation selection signal of control circuit, controls together
Multimode power amplifier module is operated the selection of pattern.112 is the baseband signal interface of control circuit, is used for accessing base band
Signal Vramp.This baseband signal Vramp can be the arbitrary value of 0～1.8V (or 0V～1.6V).When GSM mode is started working,
By arranging different baseband signals Vramp, the output of power amplifier can be adjusted.116 is low-frequency power amplifier path
High frequency input terminal, is used for accessing high frequency GSM/EDGE/TD_SCDMA/TDD_LTE radiofrequency signal.117 is transmit-receive switch, is positioned at sky
Line end.118/119/120/121/122/123, corresponding to TR1, TRX2, TRX3, TRX4, TRX5 and TRX6, it is six sending and receiving ends
Mouthful, can serve as emission port and be also used as output port.
As in figure 2 it is shown, in the present embodiment, this multimode power amplifier module, including: low frequency input matching network 101,
For accessing low frequency GSM/EDGE radiofrequency signal, it is achieved to the coupling of 50Ohm impedance.Low-frequency power amplifier 102, is used for realizing
To accessed low frequency GSM/EDGE radiofrequency signal (824MHz～849MHz；880MHz～915MHz) amplification.Low frequency output
Distribution network 103, for realizing the impedance transformation of low frequency, with the output desired by output.Control circuit 104, can use
CMOS realizes, and this mainly just considers from the flexibility ratio of design and cost.This control circuit 104 is mainly according to described base band
Signal Vramp and mode of operation select signal, provide amplifier for low-frequency power amplifier 103 and high frequency power amplifier 106
Control signal.This amplifier control signal includes: logical signal Vmode, offset signal Reg and/or collector voltage Vcc.With
Time this control circuit 104 also provide supply voltage and logic voltage for transmit-receive switch 108.High frequency input matching network 105, is used for
Access high frequency GSM/EDGE signal, TD_SCDMA signal and TDD_LTE signal, to realize the coupling of 50Ohm.High frequency power is put
Big device 106, it is achieved to accessed high frequency GSM/EDGE radiofrequency signal, TD_SCDMA signal and TDD_LTE signal (1710MHz～
Amplification 2025MHz).High frequency output network 107, for realizing the impedance transformation of high frequency, with the output desired by output.
Transmit-receive switch 108, is positioned at antenna end, connects the output of transmitting and the input of reception respectively.Wherein, embodiment illustrated in fig. 2 is received
Sending out switch 108 is SP8T.This transmit-receive switch can also expand to any SPXT as required, typically applies at antenna for mobile phone end, X
Not less than 4.The SP8T that such as 3 moulds 5 frequencies need, 5 moulds 12 frequencies it is desirable that SP16T, also some application be SP10T, SP12T or
SP14T's.
As it was previously stated, the control circuit that multimode power amplifies in module selects signal according to baseband signal and mode of operation,
For power amplifier provide amplifier control signal, with control power amplifier be amplified adjust.Here amplifier controls
Signal includes but not limited to: logical signal Vmode, offset signal Reg and/or collector voltage Vcc.At existing TD_SCDMA
With under TDD_LTE both time division multiplexings, baseband signal Vramp participates in both time division multiplexes as a logic level
The selection of pattern, or it is high level, or it is low level.So, the bias voltage or inclined under both time division multiplexings
Put electric current also a kind of value, it is impossible to be adjusted according to the output of multimode power amplifier module.
The present invention breaches the limitation of above-mentioned technology, creatively proposes to allow bias voltage or bias current believe with base band
The change of number Vramp and realize multiple value.For the sake of describing unification, above-mentioned bias voltage or bias current are referred to as biasing
Signal Reg, is i.e. needing the employing voltage signal occasion as offset signal, and offset signal Reg is bias voltage；Adopt at needs
With current signal as the occasion of offset signal, offset signal Reg is bias current.Above-mentioned bias voltage or the change of bias current
Change, the output electric current of power amplifier chip can be caused to change, it is achieved thereby that whole multimode power amplifier module
Can be with the optimization of power consumption.
Below by several specific embodiments, illustrate control circuit how to be realized by baseband signal Vramp right
The adjustment of offset signal Reg of power amplifier.
Fig. 3 is embodiment one schematic diagram controlling power amplifier bias signal according to baseband signal.In embodiment one,
The negative input end (also referred to as inverting input) of baseband signal Vramp input operational amplifier, the outfan of this operational amplifier with
The grid of one igbt is connected.The source electrode Access Control power supply Vbat of igbt.Insulated gate
The outfan that drain electrode is offset signal Reg of bipolar transistor, is used for exporting offset signal.The drain electrode of igbt
Through resistance R21 and R22 ground connection.The positive input terminal that the junction point of resistance R21 and R22 is directly connected to operational amplifier is (also referred to as same
Phase input).
As shown in Figure 4, under TD_SCDMA and TDD_LTE both time division multiplexings, utilize baseband signal Vramp,
Offset signal Reg and baseband signal Vramp is made to meet certain linear functional relation, such as Reg=G*Vramp or Reg
=G* (Vramp+Voffset), wherein parameter G is fixed value.Here offset signal Reg both can be a voltage signal,
It can also be a current signal.According to the value of baseband signal Vramp, and the bias voltage required for design optimization or biasing
Current value, can obtain corresponding parameter G.In the embodiment one shown in Fig. 3, it can be deduced that equation below:In other words, by selecting the suitable resistance of resistance R21 and R22, can obtain
Parameter G required for user.
Fig. 5 is embodiment two schematic diagram controlling power amplifier bias signal according to baseband signal.In this embodiment two
In, the connected mode of major part circuit is essentially identical with embodiment one, and difference essentially consists in igbt
Drain electrode output part.In embodiment two, the colelctor electrode of igbt connects through resistance R31, R32, R33 and R34
Ground.Wherein, a gating switch, this gating are set between junction point and the positive input terminal of operational amplifier of resistance R31 and R32
Switch and < turn on during A, the shutoff of remaining time at Vramp；The junction point of resistance R32 Yu R33 and the positive input terminal of operational amplifier it
Between a gating switch is set, this gating switch A < Vramp < during B turn on, remaining time turn off；The company of resistance R33 Yu R34
Arranging a gating switch between contact and the positive input terminal of operational amplifier, this gating switch is at Vramp > B time conducting, remaining
Time turns off.Here, A and B is certain particular threshold voltage.
Based on embodiment two circuit diagram shown in Fig. 5, offset signal Reg and baseband signal can be made
The stepped linear relationship shown in Fig. 6 is presented between Vramp.In the embodiment shown in fig. 6, with ladder
As a example by shape is divided into three sections, offset signal Reg can be set as several with the different value of baseband signal Vramp
Fixing value.That is, when Vramp < during A, Reg=V1；When A < Vramp < during B, Reg=V2；As Vramp > B time,
Reg=V3.Further, when Vramp < during A,When
A < Vramp < B,Work as Vramp > B,Here V1 < V2 < V3.In actual implementation process,
The value of the magnitude relationship between V1, V2, V3 is determined by the performance requirement of this design, and value can be zero.
Fig. 7 is embodiment three schematic diagram controlling power amplifier bias signal according to baseband signal.In this embodiment three
In, the connected mode of major part circuit is essentially identical with embodiment two, and difference essentially consists in baseband signal Vramp and reference
Voltage Vref41 is respectively connected to positive input terminal and the negative input end of multiway analog switch (MUX), the outfan of multiway analog switch
Signal Vref42 replaces original baseband signal Vramp and accesses the negative input end of operational amplifier.Above-mentioned multiway analog switch is extremely
Rare two paths, being turned on and off by baseband signal and mode of operation decision of path.In embodiment three, insulated gate bipolar
The colelctor electrode of transistor is through resistance R41, R42, R43 and R44 ground connection.Wherein, the junction point of resistance R41 with R42 is put with computing
Arranging a gating switch between the positive input terminal of big device, at Vramp, < turning on during A, remaining time turns off this gating switch；Electricity
Resistance R42 and R43 junction point and the positive input terminal of operational amplifier between a gating switch is set, this gating switch A <
< turning on during B, remaining time turns off Vramp；Arrange between junction point and the positive input terminal of operational amplifier of resistance R43 and R44
One gating switch, this gating switch is at Vramp > B time conducting, remaining time turns off.Here, A and B is certain specific threshold electricity
Pressure.
Based on the embodiment three-circuit figure shown in Fig. 7, can make to present between offset signal Reg and baseband signal Vramp
Step-like linear relationship shown in Fig. 8.In the embodiment shown in fig. 8, by step-like be divided into three sections as a example by, offset signal Reg
Several fixing value can be set as with the different value of baseband signal Vramp.That is, when baseband signal Vramp, < during A, biasing is believed
Number Reg is a fixed voltage value V4；When A < Vramp < B, offset signal Reg=V5=G*Vramp；When baseband signal Vramp >
B, offset signal Reg is also a fixed voltage value, Reg=V6.Further, when baseband signal Vramp < during A, multi-channel analog
Switch changes it and is output as Vref4=Vref,A < Vramp < B,
Multiway analog switch changes it and is output as Vref4=Vramp,When
Baseband signal Vramp > B time, multiway analog switch changes it and is output as Vref42=Vref41,
If it should be noted that arrange more resistance between the drain electrode and ground of transistor, arrange more simultaneously
Gating switch, can make the stepped linear relationship between baseband signal Vramp and offset signal Reg become more complicated many
Sample, thus meet the actual demand of various different application scene.Here transistor includes but not limited to insulated gate bipolar transistor
Pipe, field-effect transistor or audion.Corresponding the regulation of electrical circuit is the routine techniques that those of ordinary skill in the art can grasp
Means, enlighten without departing from technology provided by the present invention, do not repeat at this.
On the other hand, although TD_SCDMA and TDD_LTE also belongs to time-multiplexed mode of operation, but they are to biasing
The requirement of signal Reg or otherwise varied, therefore under TD_SCDMA and TDD_LTE pattern, can be different by arranging
Baseband signal Vramp realizes the further optimization of service behaviour.
On the basis of the different embodiments of above-mentioned multimode power amplifier module, can be it is further concluded that the present invention provides
Multimode power amplifier module output control method.It comprises the steps: to provide offset signal to low-frequency power amplifier path, its
Size is determined by size and the mode of operation of baseband signal；Thering is provided offset signal to radio frequency power amplifier path, its size is believed by base band
Number size and mode of operation determine.Wherein, offset signal is controlled, with baseband signal linearly by baseband signal and mode of operation
Or the most linear change.Or, offset signal is controlled by baseband signal and mode of operation, stepped with baseband signal
Change.Or, offset signal is controlled by baseband signal and mode of operation, is step-like linear change with baseband signal.
Multimode power amplifier module shown in above-described embodiment can be used in chip.To many in this chip
Mould power amplifier modular structure, details the most one by one at this.
It addition, above-mentioned multimode power amplifier module can be used in communication terminal, important as radio circuit
Ingredient.Communication terminal mentioned here refers to use in mobile environment, support GSM, EDGE, TD_SCDMA, TDD_
The computer equipment of the plurality of communication schemes such as LTE, FDD_LTE, includes but not limited to mobile phone, notebook computer, flat board electricity
Brain, vehicle-mounted computer etc..Additionally, this multimode power amplifier module is also applied for the occasion of other Multimodal technology application, the most double
Hold the communication base station etc. of plurality of communication schemes, detail the most one by one at this.
Above multimode power amplifier module provided by the present invention, chip and communication terminal are carried out specifically
Bright.For one of ordinary skill in the art, on the premise of without departing substantially from true spirit to it done any aobvious
And the change being clear to, all by composition to infringement of patent right of the present invention, corresponding legal responsibility will be undertaken.
Claims (16)
1. one kind towards time-multiplexed multimode power amplifier module, it is characterised in that include low-frequency power amplifier path, high frequency merit
Put path, control circuit and transmit-receive switch；
Described low-frequency power amplifier path includes the low frequency input matching network of sequential series, low-frequency power amplifier and low frequency output
Distribution network；Described low frequency input matching network is used for accessing low frequency radio frequency signal, it is achieved impedance matching；Described low frequency power amplifies
Device is for realizing the amplification to described low frequency radio frequency signal；Described low frequency output matching network turns for the impedance realizing low frequency
Change, with according to the low frequency radio frequency signal output low frequency output after amplifying；
Described radio frequency power amplifier path includes high frequency input matching network, high frequency power amplifier and the high frequency output of sequential series
Distribution network；Described high frequency input matching network is used for accessing high frequency radio signals, it is achieved impedance matching；Described high frequency power is amplified
Device is for realizing the amplification to described high frequency radio signals；Described high frequency output matching network turns for the impedance realizing high frequency
Change, with according to the high frequency radio signals output output high frequency power after amplifying；
Described control circuit, under time-multiplexed mode of operation, according to the size of baseband signal, produces different offset signals,
In order to bias described low-frequency power amplifier or the high frequency power amplifier low frequency radio frequency signal to being accessed or high-frequency radio frequency letter
Number it is amplified；Described transmit-receive switch selects signal according to mode of operation, selects corresponding mode of operation launch or receive.
2. multimode power amplifier module as claimed in claim 1, it is characterised in that:
Described time-multiplexed mode of operation is TD_SCDMA and/or TDD_LTE mode of operation.
3. multimode power amplifier module as claimed in claim 1 or 2, it is characterised in that in described control circuit, described
The negative input end of baseband signal input operational amplifier, the outfan of described operational amplifier connects the grid of described transistor；
The source electrode Access Control power supply of described transistor, drain electrode exports described offset signal.
4. multimode power amplifier module as claimed in claim 1 or 2, it is characterised in that in described control circuit, described
Baseband signal and described reference voltage are respectively connected to positive input terminal and the negative input end of multiway analog switch, and described multi-channel analog is opened
The outfan closed accesses the negative input end of operational amplifier.
5. described multimode power amplifier module as claimed in claim 4, it is characterised in that described multiway analog switch is extremely
Rare two paths, being turned on and off by baseband signal and mode of operation decision of path.
6. the multimode power amplifier module as described in claim 3 or 4, it is characterised in that: in described control circuit, described
The drain electrode of transistor is through the first resistance and the second resistant series ground connection, described first resistance and the junction point of described second resistance
Connect the positive input terminal of described operational amplifier.
7. multimode power amplifier module as claimed in claim 6, it is characterised in that in described control circuit, at adjacent electricity
Being provided with gating switch between junction point and the positive input terminal of described operational amplifier of resistance, described gating switch is according to described base
Band signal or mode of operation change on off operating mode.
8. multimode power amplifier module as claimed in claim 3, it is characterised in that in described control circuit, described crystal
The drain electrode of pipe is through the multiple resistance eutral groundings being serially connected；The junction point of adjacent resistor connects the positive input of described operational amplifier
End.
9. multimode power amplifier module as claimed in claim 1, it is characterised in that:
Described low-frequency power amplifier path at least one-level amplifying circuit, described radio frequency power amplifier path at least one-level amplifying circuit.
10. multimode power amplifier module as claimed in claim 1, it is characterised in that:
Described transmit-receive switch is positioned at antenna end；Described transmit-receive switch is SPXT, and wherein X is not less than 4.
The control method of multimode power amplifier module described in any one in 11. 1 kinds of claim 1～10, its feature exists
In comprising the steps:
Thering is provided offset signal to low-frequency power amplifier path, its size is determined by size and the mode of operation of baseband signal；
Thering is provided offset signal to radio frequency power amplifier path, its size is determined by size and the mode of operation of baseband signal.
12. control methods as claimed in claim 11, it is characterised in that:
Described offset signal is controlled by baseband signal and mode of operation, with baseband signal linearly or close to linear change.
13. control methods as claimed in claim 11, it is characterised in that:
Described offset signal is controlled, with the stepped change of baseband signal by baseband signal and mode of operation.
14. control methods as claimed in claim 11, it is characterised in that:
Described offset signal is controlled by baseband signal and mode of operation, is step-like linear change with baseband signal.
15. 1 kinds of chips with multimode power amplifier module, it is characterised in that: described chip includes claim 1
～in 10 any one towards time-multiplexed multimode power amplifier module.
16. 1 kinds of communication terminals with multimode power amplifier module, it is characterised in that: described communication terminal includes having the right
Profit requires that in 1～10, any one is towards time-multiplexed multimode power amplifier module.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610517854.6A CN106208983B (en) | 2016-06-30 | 2016-06-30 | Time division multiplexing-oriented multimode power amplifier module, chip and communication terminal |
| EP16870015.1A EP3386101A4 (en) | 2015-12-01 | 2016-12-01 | Multimode power amplifier module, chip and communication terminal |
| PCT/CN2016/108305 WO2017092705A1 (en) | 2015-12-01 | 2016-12-01 | Multimode power amplifier module, chip and communication terminal |
| EP23206865.0A EP4293900A3 (en) | 2015-12-01 | 2016-12-01 | Multimode power amplifier module, chip and communication terminal |
| US15/780,241 US10637407B2 (en) | 2015-12-01 | 2016-12-01 | Multimode power amplifier module, chip and communication terminal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610517854.6A CN106208983B (en) | 2016-06-30 | 2016-06-30 | Time division multiplexing-oriented multimode power amplifier module, chip and communication terminal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106208983A true CN106208983A (en) | 2016-12-07 |
| CN106208983B CN106208983B (en) | 2021-07-16 |
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| CN201610517854.6A Active CN106208983B (en) | 2015-12-01 | 2016-06-30 | Time division multiplexing-oriented multimode power amplifier module, chip and communication terminal |
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