CN106206879A - A kind of epitaxial growth technology of nitride semiconductor photogenerator - Google Patents
A kind of epitaxial growth technology of nitride semiconductor photogenerator Download PDFInfo
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- CN106206879A CN106206879A CN201610750924.2A CN201610750924A CN106206879A CN 106206879 A CN106206879 A CN 106206879A CN 201610750924 A CN201610750924 A CN 201610750924A CN 106206879 A CN106206879 A CN 106206879A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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Abstract
A kind of epitaxial growth technology of nitride semiconductor photogenerator, belong to semiconductor light electro-technical field, when growing the high In ingredient InGaN well layer of high In ingredient InGaN/GaN multiple quantum well active layer, the nitrogen source used is included in less than the 700 DEG C nitrogen-containing compounds i.e. with high de-agglomeration ability, it is capable of growing InGaN alloy at a lower temperature, and compared to the NH in traditional handicraft3Thering is provided more nitrogen-atoms, improve the nitrogen partial pressure in gas phase, these are all conducive to being incorporated to of In, thus improve the In component in InGaN alloy, the most also can avoid using high temperature to carry out the series of problems that InGaN alloy epitaxial growth is brought.
Description
Technical field
The invention belongs to semiconductor light electro-technical field, the extension particularly relating to a kind of nitride semiconductor photogenerator is raw
Long Technology.
Background technology
Ternary-alloy material InGaN, as third generation direct gap wide bandgap semiconductor, has extensively in field of photoelectric technology
Wealthy application prospect.By changing the component of In and Ga in alloy, its energy gap continuously may be used in the range of 0.7eV to 3.4eV
Adjust, almost cover whole visible light wave range.Therefore InGaN/GaN multi-quantum pit structure is often used to grow brightness blue light, green
Light and the active area of gold-tinted light emitting semiconductor device.
In recent years, the development of Group III-V compound semiconductor technology at any time, blue-ray LED based on InGaN system and
Red-light LED based on AlInGaP system all achieves greatly breakthrough in performance and luminous efficiency, but the sending out of green light LED
Opening up the most backward, its luminous efficiency is far below blue-ray LED and red-light LED, here it is so-called " Green Gap " problem.
For InGaN alloy, under conditions of Seedling height temperature, In atom is difficult to incorporate into, and therefore high In ingredient InGaN closes
Gold typically requires and grows under the cryogenic conditions below 800 DEG C.In the epitaxial growth technology of traditional InGaN alloy, used
Nitrogen source be usually NH3.Yet with NH3Having the highest heat stability, its resolution ratio when 950 DEG C only has 15%, therefore
Going for high-quality nitride alloy, growth temperature needs more than 1000 DEG C.This will be unfavorable for that high In ingredient InGaN closes
The growth of gold.Meanwhile, at high temperature the activity of nitrogen is very strong, causes in grown nitride alloy nitrogen vacancy concentration very
High.This is that the luminous efficiency causing long-wave band nitride semiconductor photogenerator is than one of relatively low reason.Further, since NH3
Heat stability, the NH when growing nitride alloy3Consumption very big, usual V/III ratio needs to reach thousand of the most up to ten thousand, this
To NH3Also result in waste greatly.
Summary of the invention
It is an object of the invention to provide a kind of high In ingredient grown in high In ingredient InGaN/GaN multiple quantum well active layer
The epitaxial growth technology of InGaN well layer, to improve the In component in InGaN alloy, improves long-wave band nitride semiconductor light-emitting
The luminous efficiency of device.
The technical scheme is that in the same side of substrate successively epitaxial growth buffer, involuntary doped gan layer, n
Type doped gan layer, high In ingredient InGaN/GaN multiple quantum well active layer, electronic barrier layer and p-type doped gan layer.The present invention is special
Point is: when growing the high In ingredient InGaN well layer of described high In ingredient InGaN/GaN multiple quantum well active layer, the nitrogen of employing
Source is included in less than the 700 DEG C nitrogen-containing compounds i.e. with high de-agglomeration ability.
For existing technical problem, the present invention is growing described high In ingredient InGaN/GaN multiple quantum well active layer
During high In ingredient InGaN well layer, the nitrogen source of employing is included in less than the 700 DEG C nitrogen-containing compounds i.e. with high de-agglomeration ability, logical
Cross and this i.e. there is below 700 DEG C the nitrogen-containing compound of high de-agglomeration ability to replace the NH in traditional handicraft3As growth height
The nitrogen source of In component InGaN alloy, it is possible to realize growth InGaN alloy at a lower temperature, and compared to traditional handicraft
In NH3Thering is provided more nitrogen-atoms, improve the nitrogen partial pressure in gas phase, these are all conducive to being incorporated to of In, thus improve InGaN
In component in alloy, the most also can avoid using high temperature to carry out the series of problems that InGaN alloy epitaxial growth is brought.
The present invention is when growing described high In ingredient InGaN well layer, and the nitrogen source of employing can be entirely and below 700 DEG C be
There is the nitrogen-containing compound of high de-agglomeration ability, it is also possible to be NH3With the nitrogenous chemical combination i.e. below 700 DEG C with high de-agglomeration ability
The mixed gas that thing is formed.
Nitrogen source when growing described high In ingredient InGaN well layer is entirely has high de-agglomeration ability below 700 DEG C
During nitrogen-containing compound, with III source as source metal, described nitrogen-containing compound is 20～80: 1 with the V/III ratio in III source,
The nitrogen-atoms enough participating in reaction can be provided in this proportion, reduce the usage amount in nitrogen source.
Nitrogen source when growing described high In ingredient InGaN well layer is NH3With i.e. there is below 700 DEG C high de-agglomeration ability
During the mixed gas that nitrogen-containing compound is formed, described NH3It is 0～9: 1 with the mixing mol ratio of described nitrogen-containing compound, with
III source is source metal, and described nitrogen source mixed gas is 20～1000: 1 with the V/III ratio in III source, passes through NH3Introducing,
The nitrogen partial pressure in gas phase can be regulated.
The described nitrogen-containing compound i.e. below 700 DEG C with high de-agglomeration ability can be monomethyl diamine (CH3HNNH2,
MMHy), dimethyl hydrazine ((CH3)2NNH2, DMHy), tert-butyl group diamine ((CH3)3CHNNH2, TBHy) or diamine (H2NNH2In)
Any one, the cracking of these nitrogen-containing compounds can be the lowest, it is possible at a lower temperature decompose produce InGaN alloy
Required nitrogen-atoms.
Preferably, the growth temperature condition of high In ingredient InGaN well layer of the present invention is 600 DEG C～900 DEG C.Relatively low
In growth temperature beneficially InGaN alloy, In's is incorporated to.In described high In ingredient InGaN well layer, the component of In is more than 30%, uses
Long wave band scope is reached with regulation emission wavelength.
Compared with prior art, the present invention uses a kind of nitrogen-containing compound i.e. below 700 DEG C with high de-agglomeration ability
Replace the NH in traditional handicraft3As the nitrogen source of growth high In ingredient InGaN alloy, improve in traditional handicraft at low temperature bar
NH when growing high In ingredient InGaN alloy under part3As the problem that nitrogen source decomposition efficiency is low.Meanwhile, nitrogen is grown at low temperatures
Activity does not has under high temperature strong, and the nitrogen source of low decomposition temperature can provide more nitrogen-atoms, improves the nitrogen partial pressure in gas phase,
These can suppress the concentration in nitrogen room in InGaN alloy, improves alloy mass, improves long-wave band nitride semiconductor light-emitting
The luminous efficiency of device, improves " Green Gap " problem.
Accompanying drawing explanation
Fig. 1 is the structural representation of the epitaxial wafer of a kind of luminescent device of the present invention.
In figure, 100: substrate；101: cushion；102: involuntary doped gan layer；103:n type doped gan layer；104: high
In component InGaN/GaN multiple quantum well active layer；105: electronic barrier layer；106:p type doped gan layer.
Detailed description of the invention
The whole process of the present invention uses MOCVD device growth, adds 700 in growth during high In ingredient InGaN well layer
I.e. having the nitrogen-containing compound of high de-agglomeration ability below DEG C as nitrogen source, the growth of other epitaxial layers is still with NH3As nitrogen source；
Using trimethyl gallium (TMGa) or triethyl-gallium (TEGa) as Ga source；Using trimethyl indium (TMIn) as In source；With trimethyl aluminium
(TMAl) as Al source；With silane (SiH4) as N-shaped doped source；With two cyclopentadienyl magnesium (Cp2Mg) as p-type doped source；With hydrogen
(H2) or nitrogen (N2) as carrier gas.
Concrete growth step:
1, growing a layer thickness cushion 101 between 20nm～40nm on the substrate 100, the nitrogen source needed for growth is NH3,
Ga source is TMGa, and growth atmosphere is H2Atmosphere.
2, growing a layer thickness on cushion 101 is the involuntary doped gan layer 102 about 2 μm, the nitrogen needed for growth
Source is NH3, Ga source is TMGa, and growth atmosphere is H2Atmosphere.
3, growing a layer thickness in involuntary doped gan layer 102 is the N-shaped doped gan layer 103 about 2 μm, grows institute
The nitrogen source needed is NH3, Ga source is TMGa, and growth atmosphere is H2Atmosphere.
4, in N-shaped doped gan layer 103, high In ingredient InGaN/GaN multiple quantum well active layer 104 is grown:
Symbiosis length 5～20 pairs of high In ingredient InGaN/GaN SQWs, in each centering, high In ingredient InGaN well layer thickness is
About 3nm, GaN barrier layer thickness is about 15nm, the Ga source needed for growth be TEGa, In source be TMIn, growth atmosphere switches to
N2Atmosphere.
Especially, in the growth course of high In ingredient InGaN/GaN multiple quantum well active layer, required during growth well layer
Nitrogen source is described as follows with different embodiments.
Embodiment A:
In high In ingredient InGaN well layer, the component of In is more than 30%, and growth temperature is between 600 DEG C～900 DEG C.Grow high In
Nitrogen source required during component InGaN well layer is entirely less than the 700 DEG C nitrogen-containing compounds with high de-agglomeration ability, described nitrogenous
Compound is 20～80: 1 with the V/III ratio in III source.
Embodiment B:
In high In ingredient InGaN well layer, the component of In is more than 30%, and growth temperature is between 600 DEG C～900 DEG C.Grow high In
Nitrogen source required during component InGaN well layer is NH3Formed with less than 700 DEG C nitrogen-containing compounds i.e. with high de-agglomeration ability
Mixed gas, NH in described mixed gas3I.e. there is the mixing mol ratio of the nitrogen-containing compound of high de-agglomeration ability with less than 700 DEG C
Being 0～9: 1, described nitrogen source mixed gas is 20～1000: 1 with the V/III ratio in III source.
Less than the 700 DEG C nitrogen-containing compounds i.e. with high de-agglomeration ability described in example A performed as described above and embodiment B can
To include following compound: monomethyl diamine (CH3HNNH2, MMHy), dimethyl hydrazine ((CH3)2NNH2, DMHy), the tert-butyl group connection
Amine ((CH3)3CHNNH2, TBHy), diamine (H2NNH2) etc., but it is not limited to this.
5, in high In ingredient InGaN/GaN multiple quantum well active layer 104, a layer thickness is grown between 15nm～25nm
Electronic barrier layer 105, electronic barrier layer 105 use p-type adulterate AlGaN layer, the nitrogen source needed for growth is NH3, Ga source is
TEGa, Al source is TMAl, and growth atmosphere is N2Atmosphere.
6, on electronic barrier layer 105, a layer thickness p-type doped gan layer 106 between 50nm～100nm is grown, raw
Nitrogen source needed for length is NH3, Ga source is TMGa, and growth atmosphere switches to H2Atmosphere.
Above-described embodiment is merely to illustrate and unrestricted the technical program, any technical side without departing from this patent scope
Case, all should contain within the protection domain of this patent.
Claims (9)
1. an epitaxial growth technology for nitride semiconductor photogenerator, buffers in the same side of substrate successively epitaxial growth
Layer, involuntary doped gan layer, N-shaped doped gan layer, high In ingredient InGaN/GaN multiple quantum well active layer, electronic barrier layer and p
Type doped gan layer；It is characterized in that: at the high In ingredient growing described high In ingredient InGaN/GaN multiple quantum well active layer
During InGaN well layer, the nitrogen source of employing is included in less than the 700 DEG C nitrogen-containing compounds i.e. with high de-agglomeration ability.
Epitaxial growth technology the most according to claim 1, it is characterised in that: growing described high In ingredient InGaN well layer
Time, the nitrogen source of employing is the nitrogen-containing compound i.e. below 700 DEG C with high de-agglomeration ability.
Epitaxial growth technology the most according to claim 2, it is characterised in that: growing described high In ingredient InGaN well layer
Time, with III source as source metal, described nitrogen-containing compound is 20～80: 1 with the V/III ratio in III source.
Epitaxial growth technology the most according to claim 1, it is characterised in that: growing described high In ingredient InGaN well layer
Time, the nitrogen source of employing is NH3The mixed gas formed with the nitrogen-containing compound i.e. below 700 DEG C with high de-agglomeration ability.
Epitaxial growth technology the most according to claim 4, it is characterised in that: growing described high In ingredient InGaN well layer
Time nitrogen source mixed gas in, described NH3It is 0～9: 1 with the mixing mol ratio of described nitrogen-containing compound.
Epitaxial growth technology the most according to claim 4, it is characterised in that: growing described high In ingredient InGaN well layer
Time, with III source as source metal, described nitrogen source mixed gas is 20～1000: 1 with the V/III ratio in III source.
7. according to the epitaxial growth technology described in claim 1 or 2 or 3 or 4 or 5 or 6, it is characterised in that: described 700 DEG C with
Under i.e. to have the nitrogen-containing compound of high de-agglomeration ability be in monomethyl diamine, dimethyl hydrazine, tert-butyl group diamine or diamine
Kind.
Epitaxial growth technology the most according to claim 1, it is characterised in that: the growth of described high In ingredient InGaN well layer
Temperature conditions is 600 DEG C～900 DEG C.
Epitaxial growth technology the most according to claim 1, it is characterised in that: In in described high In ingredient InGaN well layer
Component is more than 30%.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110504334A (en) * | 2019-08-28 | 2019-11-26 | 陕西科技大学 | A kind of InGaN/GaN multiple quantum wells solar battery of high In ingredient |
| CN113451455A (en) * | 2020-11-26 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | Preparation method of LED epitaxy, LED epitaxy structure and LED chip |
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| CN101621100A (en) * | 2008-07-01 | 2010-01-06 | 台湾积体电路制造股份有限公司 | Light-emitting diode with reflecting plate |
| CN104952710A (en) * | 2015-06-12 | 2015-09-30 | 湘能华磊光电股份有限公司 | LED (Light-emitting Diode) epitaxial layer growing method |
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- 2016-08-30 CN CN201610750924.2A patent/CN106206879A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621100A (en) * | 2008-07-01 | 2010-01-06 | 台湾积体电路制造股份有限公司 | Light-emitting diode with reflecting plate |
| CN104952710A (en) * | 2015-06-12 | 2015-09-30 | 湘能华磊光电股份有限公司 | LED (Light-emitting Diode) epitaxial layer growing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110504334A (en) * | 2019-08-28 | 2019-11-26 | 陕西科技大学 | A kind of InGaN/GaN multiple quantum wells solar battery of high In ingredient |
| CN113451455A (en) * | 2020-11-26 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | Preparation method of LED epitaxy, LED epitaxy structure and LED chip |
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Application publication date: 20161207 |