CN106206825A - Window layer containing low optical refractivity and the multijunction solar cell of launch site - Google Patents
Window layer containing low optical refractivity and the multijunction solar cell of launch site Download PDFInfo
- Publication number
- CN106206825A CN106206825A CN201610802693.5A CN201610802693A CN106206825A CN 106206825 A CN106206825 A CN 106206825A CN 201610802693 A CN201610802693 A CN 201610802693A CN 106206825 A CN106206825 A CN 106206825A
- Authority
- CN
- China
- Prior art keywords
- window layer
- launch site
- battery
- solar cell
- multijunction solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 45
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 230000005611 electricity Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002372 labelling Methods 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Photovoltaic Devices (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
Abstract
The invention discloses the multijunction solar cell of a kind of Window layer containing low optical refractivity and launch site, this multijunction solar cell is by several broad stopbands, middle forbidden band, the sub-battery cascade of low energy gap forms, every sub-battery all has Window layer, launch site, base and back surface field layer, described launch site uses N-shaped battery main body material, Window layer uses n-type material, this window layer material energy gap is more than launch site battery main body material, this window layer material and launch site battery main body material energy gap difference are not less than 0.50eV, in 500 900nm wave-length coverages, light refraction rate variance is not higher than 0.25.The multijunction solar cell that the present invention provides, by using low optical refractivity Window layer to combine with launch site, the incident sunlight of reduction, in the reflection of each sub-battery Window layer, promotes the electric current density of each sub-battery, thus significantly improves the performance of multijunction solar cell.
Description
Technical field
The present invention relates to a kind of solar cell.Specifically, it is a kind of Window layer containing low optical refractivity and transmitting
The multijunction solar cell in district.
Background technology
Multijunction solar cell passes through the semiconductor absorber material that multilamellar energy gap is different, it is achieved that in wide spectral range too
Fully collecting of sun photon energy utilizes with efficient, thus obtains high photoelectric transformation efficiency.The efficient multi-node of a new generation is too
Positive electricity pond, the sub-battery made by the semi-conducting material of the multiple multiple different energy gaps of cascade, it is achieved that photon energy
Efficiently utilize, but owing to each sub-battery is series relationship, fully collecting of solar photon is existed certain difficulty.
Every sub-battery all has the basic structures such as Window layer, launch site, base and back surface field layer.In conventional batteries structure,
In order to realize carrier high efficiency separation, it is to avoid interface meets and causes degradation, it is desirable to window layer material energy gap is much larger than
Battery main body (launch site and base) energy gap, not extinction of the most also should trying one's best, it is to avoid photon loss, therefore Al0.5In0.5P
Material becomes preferably selection.But Al0.5In0.5P light refractive index and the middle forbidden band Al of multijunction cellxGa1-xAs material (x=
0.20～0.37) having bigger difference, incident sunlight is after penetrating the sub-battery of prime, by the window at the sub-battery in middle forbidden band
There is violent emission phenomena on layer/interface, launch site in mouth, significantly reduces incident photon quantity, thus have impact on cell performance
Energy.Owing to multijunction cell structure is complicated, it is more difficult to realized the compensation of incident photon by battery antireflective film layer.
Summary of the invention
It is an object of the invention to provide a kind of multijunction solar cell, use low optical refractivity Window layer and launch site
Combination reduce the incident illumination reflection in middle forbidden band sub-battery Window layer/interface, launch site.
In order to achieve the above object, the invention provides a kind of Window layer containing low optical refractivity and launch site
Multijunction solar cell, this multijunction solar cell is made up of several broad stopbands, middle forbidden band, the sub-battery cascade of low energy gap, every height
Battery all has Window layer, launch site, base and back surface field layer, and described launch site uses N-shaped battery main body material, Window layer
Using n-type material, this window layer material energy gap is more than launch site battery main body material, this window layer material and launch site electricity
Tank main body material energy gap difference is not higher than 0.25 not less than light refraction rate variance in 0.50eV, 500-900nm wave-length coverage.
The above-mentioned Window layer containing low optical refractivity and the multijunction solar cell of launch site, wherein, described width
Forbidden band sub-battery energy gap 1.90-2.20eV, described middle forbidden band sub-battery energy gap 1.35-1.75eV, described is narrow
Forbidden band sub-battery energy gap 0.60-1.20eV.
The above-mentioned Window layer containing low optical refractivity and the multijunction solar cell of launch site, wherein, described sends out
Penetrating the battery main body material that district uses the N-shaped of Si doping, thickness is 40-100nm, and doping content is 1 × 1017～1 × 1018cm-3。
The above-mentioned Window layer containing low optical refractivity and the multijunction solar cell of launch site, wherein, described electricity
Tank main body material uses AlxGa1-xAs material, wherein, x=0.20～0.37.
The above-mentioned Window layer containing low optical refractivity and the multijunction solar cell of launch site, wherein, described window
The energy gap of mouth layer material is more than battery main body material, the light refractive index of this window layer material and battery main body material phase
Closely.
The above-mentioned Window layer containing low optical refractivity and the multijunction solar cell of launch site, wherein, described window
Mouth layer uses the Al of Si dopingxGa1-xAs, wherein, x=0.40～0.70.
The above-mentioned Window layer containing low optical refractivity and the multijunction solar cell of launch site, wherein, described window
Mouth layer thickness is 10-50nm, and doping content is 1 × 1018～5 × 1018cm-3。
The present invention provides the multijunction solar cell containing low optical refractivity Window layer with launch site combination, by using
Low optical refractivity Window layer combines with launch site, reduces the reflection in each sub-battery Window layer of the incident sunlight, promotes each
The electric current density of sub-battery, thus significantly improve the performance of multijunction solar cell.
Accompanying drawing explanation
Fig. 1 is a kind of multijunction cell structural representation of the present invention.
Fig. 2 is the preferred of the multijunction solar cell combined with launch site containing low optical refractivity Window layer of the present invention
The battery structure schematic diagram of embodiment.
Fig. 3 is the preferred of the multijunction solar cell combined with launch site containing low optical refractivity Window layer of the present invention
Embodiment contrasts with reflectance spectrum with the quantum efficiency spectrum of tradition multijunction cell.
Detailed description of the invention
Below in conjunction with accompanying drawing, technical scheme is described further.
As it is shown in figure 1, combine many containing low optical refractivity Window layer with launch site for a kind of of present invention offer
Connection solar cell, this multijunction solar cell based on different energy gap III-V group semi-conductor material, by multiple broad stopbands, in
Forbidden band, the sub-battery of low energy gap (10,20,30) cascade composition.The launch site 50 of the sub-battery in middle forbidden band of multijunction solar cell uses n
The sub-battery main body material of type doping, its thickness is 40-100nm, and doping content is 1 × 1017～1 × 1018cm-3；Window layer 40
Using n-type material, this material energy gap is more than battery main body material, and its light refractive index is slightly above battery main body material, its
Thickness is 10-50nm, and doping content is 1 × 1018～5 × 1018cm-3。
As a example by GaInP/GaAs binode battery (there is a sub-battery in broad stopband and a sub-battery in middle forbidden band), battery
Structure as in figure 2 it is shown, in binode battery the Window layer 1 of the sub-battery of forbidden band GaAs use the Al that N-shaped Si adulterates0.45Ga0.55As material
Replacing tradition AlInP material, window layer thickness 30nm, doping content is 2 × 1018cm-3, the launch site 2 of the sub-battery of GaAs, base
District 3 and back surface field floor 4 all use conventional thickness and doping content.This binode battery uses low pressure metal organic vapor phase epitaxy
(MOCVD) equipment grows on N-shaped GaAs substrate 5.Prepare the quantum efficiency of battery with reflectance spectrum as shown in Figure 3.By to adopting
With tradition AlInP Window layer battery (with " △ " labelling) and low optical refractivity Al0.45Ga0.55As Window layer battery is (with "○"
Labelling) contrast it can be seen that the change of window layer material does not affect the quantum response characteristic (dotted line in figure of the sub-battery of GaAs
Shown in), in 600nm to 950nm spectral region, battery surface reflectance significantly reduces, thus binode battery short circuit electric current density
Being obviously improved, battery efficiency is improved.
Although present disclosure has been made to be discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read foregoing, for the present invention's
Multiple amendment and replacement all will be apparent from.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (7)
1. the Window layer containing low optical refractivity and the multijunction solar cell of launch site, it is characterised in that these many knots
Solar cell is made up of several broad stopbands, middle forbidden band, the sub-battery cascade of low energy gap, and every sub-battery all has Window layer, sends out
Penetrating district, base and back surface field floor, described launch site uses N-shaped battery main body material, and Window layer uses n-type material, this window
Layer material energy gap is more than launch site battery main body material, this window layer material and launch site battery main body material energy gap
Difference is not higher than 0.25 not less than light refraction rate variance in 0.50eV, 500-900nm wave-length coverage.
2. the Window layer containing low optical refractivity as claimed in claim 1 and the multijunction solar cell of launch site, it is special
Levy and be, described broad stopband sub-battery energy gap 1.90-2.20eV, described middle forbidden band sub-battery energy gap 1.35-
1.75eV, described low energy gap battery energy gap 0.60-1.20eV.
3. the Window layer containing low optical refractivity as claimed in claim 1 and the multijunction solar cell of launch site, it is special
Levying and be, described launch site uses the battery main body material of the N-shaped of Si doping, and thickness is 40-100nm, and doping content is 1 ×
1017～1 × 1018cm-3。
4. the Window layer containing low optical refractivity as claimed in claim 3 and the multijunction solar cell of launch site, it is special
Levying and be, described battery main body material uses AlxGa1-xAs material, wherein, x=0.20～0.37.
5. the Window layer containing low optical refractivity as claimed in claim 1 and the multijunction solar cell of launch site, it is special
Levy and be, the energy gap of described window layer material be more than battery main body material, the light refractive index of this window layer material with
Battery main body material is close.
6. the Window layer containing low optical refractivity as claimed in claim 5 and the multijunction solar cell of launch site, it is special
Levying and be, described Window layer uses the Al of Si dopingxGa1-xAs, wherein, x=0.40～0.70.
7. the Window layer containing low optical refractivity as claimed in claim 6 and the multijunction solar cell of launch site, it is special
Levying and be, described window layer thickness is 10-50nm, and doping content is 1 × 1018～5 × 1018cm-3。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610802693.5A CN106206825B (en) | 2016-09-05 | 2016-09-05 | The multijunction solar cell of Window layer and launch site containing low optical refringence |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610802693.5A CN106206825B (en) | 2016-09-05 | 2016-09-05 | The multijunction solar cell of Window layer and launch site containing low optical refringence |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106206825A true CN106206825A (en) | 2016-12-07 |
| CN106206825B CN106206825B (en) | 2017-08-25 |
Family
ID=58067279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610802693.5A Active CN106206825B (en) | 2016-09-05 | 2016-09-05 | The multijunction solar cell of Window layer and launch site containing low optical refringence |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106206825B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111430495A (en) * | 2020-04-01 | 2020-07-17 | 扬州乾照光电有限公司 | Multi-junction solar cell and power supply equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101083290A (en) * | 2006-06-02 | 2007-12-05 | 昂科公司 | Metamorphic layers in multijunction solar cells |
| US20090272430A1 (en) * | 2008-04-30 | 2009-11-05 | Emcore Solar Power, Inc. | Refractive Index Matching in Inverted Metamorphic Multijunction Solar Cells |
| CN104576799A (en) * | 2015-01-23 | 2015-04-29 | 浙江大学 | Solar cell with phase grating nanostructure |
-
2016
- 2016-09-05 CN CN201610802693.5A patent/CN106206825B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101083290A (en) * | 2006-06-02 | 2007-12-05 | 昂科公司 | Metamorphic layers in multijunction solar cells |
| US20090272430A1 (en) * | 2008-04-30 | 2009-11-05 | Emcore Solar Power, Inc. | Refractive Index Matching in Inverted Metamorphic Multijunction Solar Cells |
| CN104576799A (en) * | 2015-01-23 | 2015-04-29 | 浙江大学 | Solar cell with phase grating nanostructure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111430495A (en) * | 2020-04-01 | 2020-07-17 | 扬州乾照光电有限公司 | Multi-junction solar cell and power supply equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106206825B (en) | 2017-08-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8609984B2 (en) | High efficiency photovoltaic cell for solar energy harvesting | |
| US20090255576A1 (en) | Window solar cell | |
| US9543456B1 (en) | Multijunction solar cell employing extended heterojunction and step graded antireflection structures and methods for constructing the same | |
| TWI600173B (en) | Multijunction solar cell with low band gap absorbing layer in the middle cell and method for fabricating the same | |
| Brown et al. | Third generation photovoltaics | |
| CN101533863B (en) | High-efficiency single-chip four-junction solar battery | |
| US20090255575A1 (en) | Lightweight solar cell | |
| US20050247339A1 (en) | Method of operating a solar cell | |
| JPH05114747A (en) | Improved monolithic tandem-type solar cell | |
| US20120180857A1 (en) | Conversion solar cell | |
| US10790399B1 (en) | High efficiency quantum dot sensitized thin film solar cell with absorber layer | |
| CN102412337A (en) | High-efficient four solar cell and manufacturing method thereof | |
| CN210073891U (en) | Multi-junction solar cell capable of improving anti-irradiation performance | |
| CN103094378B (en) | Containing the back of the body incidence solaode becoming In component InGaN/GaN multi-layer quantum well structure | |
| CN202503000U (en) | High-efficiency triple-junction solar battery | |
| CN110491957A (en) | Lattice graded buffer layer applied to lattice mismatch solar battery epitaxial growth | |
| CN111430493B (en) | Multi-junction solar cell and power supply equipment | |
| US11984274B2 (en) | Solar cell having a porous silicon layer | |
| CN111725332A (en) | High-performance three-junction gallium arsenide solar cell | |
| CN106206825B (en) | The multijunction solar cell of Window layer and launch site containing low optical refringence | |
| Barnham et al. | Recent Progress in QuantumWell Solar Cells | |
| Li et al. | > 35% 5-junction space solar cells based on the direct bonding technique | |
| US20150357496A1 (en) | Core-shell particle, upconversion layer, and photoelectric conversion device | |
| KR101252815B1 (en) | Down conversion oxide fluorescent composition for solar cell and method of fabrication of high efficiency solar cell using thereof | |
| CN113035983B (en) | Multi-junction solar cell and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |