CN106206623A - A kind of display base plate, its manufacture method, display floater and display device - Google Patents
A kind of display base plate, its manufacture method, display floater and display device Download PDFInfo
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- CN106206623A CN106206623A CN201610851918.6A CN201610851918A CN106206623A CN 106206623 A CN106206623 A CN 106206623A CN 201610851918 A CN201610851918 A CN 201610851918A CN 106206623 A CN106206623 A CN 106206623A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
Abstract
The embodiment of the invention discloses a kind of display base plate, its manufacture method, display floater and display device.In the program, during making display base plate, the overlapping region removing the figure of region distance pixel electrode and the figure of drain electrode completely in photoresist film has certain distance, so, etching scope can be limited and cannot arrive the insulating layer of thin-film that the figure of pixel electrode is corresponding with the overlapping region of the figure of drain electrode, serve barrier effect, the insulating layer of thin-film protecting this region is not etched, there is hole in the insulating layer of thin-film avoiding the figure of pixel electrode corresponding with the overlapping region of the figure of drain electrode, reduce the risk that undercutting is bad, improve product yield.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of display base plate, its manufacture method, display floater and display
Device.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display, TFT-
LCD) there is the features such as volume is little, low in energy consumption, radiationless, in current flat panel display market, occupy leading position.TFT-
LCD mainly includes display panels, time schedule controller and drive integrated circult (Integrated Circuit, IC), its
In, the display panels of TFT-LCD is by becoming box array base palte together, color membrane substrates and the liquid crystal molecule being located therein
Composition, is formed with a plurality of crisscross grid line and data wire and multiple display unit in the viewing area on array base palte,
The corresponding TFT of each display unit, can be controlled the reversion of liquid crystal molecule in the display unit of correspondence, thus reach by TFT
The purpose of display image.The driving IC of TFT-LCD includes source drive IC and raster data model IC.Wherein, raster data model IC passes through
The grid that grid line will drive signal to be sent to each TFT, to control the opening and closing of often row TFT；Source drive IC is beaten at TFT
When opening, the source electrode that signal will be driven to be sent to each column TFT by data wire, to control the input voltage of each TFT source electrode, and leaks
Pole electrically connects with pixel electrode, can reach the purpose to pixel charging display.
In the structure of the TFT-LCD display of existing a kind of ADS pattern, as it is shown in figure 1, include being positioned at underlay substrate 11
On pixel electrode 12, the insulating barrier 13 that is positioned on pixel electrode 12, the drain electrode 14 of the TFT being positioned on insulating barrier 13, cover leakage
The passivation layer 15 of pole 14 and insulating barrier 13.Wherein, drain electrode 14 and pixel electrode 12 have overlapping region, in order to carry to pixel electrode 12
Power supply signal, needs to be overlapped by via between drain electrode 14 and pixel electrode 12, and one of which technique uses single via to take exactly
Connect, need etching overlap joint via in insulating barrier on the pixel electrode, in order to one end of overlap joint drain electrode, owing to passivation layer also needing
Etch other vias many, this overlap joint via can be etched, to save mask plate simultaneously.As it is shown in figure 1, at passivation layer 15
On photoresist film 16 is exposed display, side comprises formation opening at the region of overlapping region on the pixel electrode, then
Etching overlap joint via, but owing to etching technics is wayward, during etching overlap joint via, easily by one end and the picture of this drain electrode 14
Element electrode 12 just to the insulating barrier 13 in region etch away, as in figure 2 it is shown, cause draining 14 one end under there is hole 17, i.e.
There is the problem that undercutting is bad, easily cause the overlap joint wire breaking in overlap joint via.
Summary of the invention
The purpose of the embodiment of the present invention is to provide a kind of display base plate, its manufacture method, display floater and display device, uses
There is, in time solving the overlap joint via of pixel electrode and the drain electrode using technique of the prior art to make, the problem that undercutting is bad.
The purpose of the embodiment of the present invention is achieved through the following technical solutions:
A kind of manufacture method of display base plate, the method includes:
Underlay substrate sequentially forms the figure of the pixel electrode of stacking, insulating layer of thin-film, the figure of drain electrode, passivation layer
Thin film and photoresist film；Wherein, the figure of described pixel electrode includes the overlapping region of the figure with described drain electrode and nothing
Overlapping region；
Utilize intermediate tone mask version that described photoresist film is exposed development, described photoresist film is formed light
Photoresist removes region completely, photoresist part retains region and photoresist is fully retained region；Described photoresist is removed completely
Region is positioned at region corresponding with the region of described no overlap in described photoresist film, and described photoresist is removed completely
Region, in the orthographic projection of described underlay substrate, is more than in the minimum range of the orthographic projection of described underlay substrate with described overlapping region
First predeterminable range；Described photoresist part retains overlapping region described in region overlay and complete to described photoresist from this region
Remove the region between region；
Utilize etching technics and described photoresist film, described passivation layer thin film and described insulating layer of thin-film etch shape
Become the figure of described pixel electrode and the overlap joint via of the figure of described drain electrode.
It is preferred that utilize etching technics and described photoresist film, at described passivation layer thin film and described insulating layer of thin-film
Middle etching forms the figure of described pixel electrode and the overlap joint via of the figure of described drain electrode, including:
Utilizing etching technics and described photoresist to remove region completely, etching is positioned at via and the institute of described passivation layer thin film
State the via in insulating layer of thin-film；Wherein, the via region etched in described passivation layer thin film is at described underlay substrate
Orthographic projection, with described overlapping region in the minimum range of the orthographic projection of described underlay substrate more than the second predeterminable range；
The photoresist film that photoresist is fully retained region and photoresist part reservation region carries out ashing process, completely
Remove photoresist part and retain photoresist film corresponding to region to expose the passivation layer thin film in described overlapping region, simultaneously
Part is removed photoresist and the photoresist film in region is fully retained；
Utilize etching technics to etch the passivation layer thin film in described overlapping region, expose described drain electrode figure one
End, to form described overlap joint via.
It is preferred that described first predeterminable range is not less than lateral etching amount during the described passivation layer thin film of etching.
It is preferred that described passivation layer thin film is silicon nitride, silicon oxide or silicon oxynitride；The thickness of described passivation layer thin film
In the range ofLateral etching amount during described etching described passivation layer thin film is 1 μm～2 μm.
It is preferred that described second predeterminable range is not less than lateral etching amount during the described insulating layer of thin-film of etching.
It is preferred that described insulating layer of thin-film is silicon nitride, silicon oxide or silicon oxynitride；The thickness of described insulating layer of thin-film
In the range ofLateral etching amount during the described insulating layer of thin-film of described etching is 0.5 μm～1.5 μm.
A kind of display base plate, described display base plate is to use the method described in any of the above item to make to obtain.
A kind of display floater, described display floater includes display base plate as described above.
A kind of display device, described display device includes display floater as described above.
Having the beneficial effect that of the embodiment of the present invention:
In display base plate, its manufacture method, display floater and display device that the embodiment of the present invention provides, aobvious owing to making
During showing substrate, the figure of the region distance pixel electrode of removal completely in photoresist film is overlapping with the figure of drain electrode
There is certain distance in region, as such, it is possible to limit etching scope cannot arrive the overlapping of the figure of pixel electrode and the figure of drain electrode
The insulating layer of thin-film that region is corresponding, serves barrier effect, the insulating layer of thin-film protecting this region is not etched, it is to avoid picture
There is hole in the insulating layer of thin-film that the figure of element electrode is corresponding with the overlapping region of the figure of drain electrode, reduces the wind that undercutting is bad
Danger, improves product yield.
Accompanying drawing explanation
Fig. 1 be in prior art to overlap joint via etch during, the structural representation after photoresist film exposure imaging
Figure；
Fig. 2 is the structural representation overlapping via in prior art；
The manufacture method flow chart of a kind of display base plate that Fig. 3 provides for the embodiment of the present invention.
Structural representation in the manufacturing process of a kind of display base plate that Fig. 4 a～Fig. 4 f provides for the embodiment of the present invention.
Detailed description of the invention
A kind of display base plate of with embodiment, the present invention being provided below in conjunction with the accompanying drawings, its manufacture method, display floater and
Display device illustrates in greater detail.
In the embodiment of the present invention, it is provided that the manufacture method of a kind of display base plate, as it is shown on figure 3, at least comprise the steps:
Step 310, on underlay substrate, sequentially form the figure of the figure of the pixel electrode of stacking, insulating layer of thin-film, drain electrode
Shape, passivation layer thin film and photoresist film；Wherein, the figure of pixel electrode include the region overlapping with the figure of drain electrode and
The region of no overlap.
Step 320, utilize intermediate tone mask version photoresist film is exposed development, in photoresist film formed light
Photoresist removes region completely, photoresist part retains region and photoresist is fully retained region；Region removed completely by photoresist
It is positioned in photoresist film the region corresponding with the region of above-mentioned no overlap, and photoresist removes region completely at substrate base
The orthographic projection of plate, is more than the first predeterminable range with above-mentioned overlapping region in the minimum range of the orthographic projection of underlay substrate；Photoresist
Part retains the above-mentioned overlapping region of region overlay and removes the region between region completely from this region to photoresist.
Step 330, utilizing etching technics and photoresist film, in passivation layer thin film and insulating layer of thin-film, etching forms picture
The figure of element electrode and the overlap joint via of the figure of drain electrode.
In the embodiment of the present invention, owing to making during display base plate, the region of removal completely in photoresist film away from
Have with the overlapping region of the figure of drain electrode with a certain distance from the figure of pixel electrode, cannot arrive as such, it is possible to limit etching scope
Reach the insulating layer of thin-film that the figure of pixel electrode is corresponding with the overlapping region of the figure of drain electrode, serve barrier effect, protect
The insulating layer of thin-film in this region is not etched, it is to avoid exhausted with the overlapping region of the figure of drain electrode corresponding of the figure of pixel electrode
There is hole in edge layer thin film, reduces the risk that undercutting is bad, improves product yield.
It should be noted that mainly introduce in the embodiment of the present invention is the scheme of etching overlap joint via, for passivation layer
In the etching of other via, do not illustrate at this.
When being embodied as, it is preferred that in above-mentioned steps 130, utilize etching technics and photoresist film, at passivation layer thin film
Form the figure of pixel electrode and the overlap joint via of the figure of drain electrode with etching in insulating layer of thin-film, specifically may is that
Utilizing etching technics and photoresist to remove region completely, etching is positioned at via and the insulating layer of thin-film of passivation layer thin film
In via；Wherein, in passivation layer thin film, the via region of etching is in the orthographic projection of underlay substrate, exists with overlapping region
The minimum range of the orthographic projection of underlay substrate is more than the second predeterminable range；
The photoresist film that photoresist is fully retained region and photoresist part reservation region carries out ashing process, completely
Remove photoresist part and retain photoresist film corresponding to region to expose the passivation layer thin film in overlapping region, part simultaneously
Remove photoresist and the photoresist film in region is fully retained；
Utilize the passivation layer thin film in etching technics etching overlapping region, expose one end of the figure of drain electrode, to be formed
Overlap joint via.
In the present embodiment, due to the figure of via range pixel electrode of etching and the figure of drain electrode in passivation layer thin film
There is certain distance, be further ensured that the passivation layer thin film that the figure of etching pixel electrode is corresponding with the figure overlapping region of drain electrode
Time, limit etching scope and cannot arrive the insulating layer of thin-film that the figure of pixel electrode is corresponding with the overlapping region of the figure of drain electrode.
Below by object lesson, above flow process is explained in more detail.
Step one, as shown in fig. 4 a, sequentially forms the figure 22 of the pixel electrode of stacking, insulating barrier on underlay substrate 21
Thin film 23, figure 24, passivation layer thin film 25 and the photoresist film 26 of drain electrode；Wherein, the figure 22 of pixel electrode include with
Figure 24 overlapping region and the region of no overlap of drain electrode
Step 2, as shown in Figure 4 b, utilizes intermediate tone mask version photoresist film 26 to be exposed development, at photoresist
In thin film 26, region A removed completely by formation photoresist, photoresist part retains region B and photoresist is fully retained region C；Light
Photoresist is removed region A completely and is positioned at region corresponding with the region of above-mentioned no overlap in photoresist film 26, and photoresist
Remove region A completely in the orthographic projection of underlay substrate 21, with above-mentioned overlapping region at the narrow spacing of the orthographic projection of underlay substrate 21
From D more than the first predeterminable range；Photoresist part retains region B and covers above-mentioned overlapping region and complete to photoresist from this region
Remove the region between the A of region.
In the present embodiment, the photoresist of employing is positive photoresist, naturally it is also possible to use negative photoresist, needs phase
The mask plate answered adjusts.
Step 3, as illustrated in fig. 4 c, utilizes etching technics and photoresist to remove region A completely, and it is thin that etching is positioned at passivation layer
Via in the via of film 25 and insulating layer of thin-film 23；Wherein, in passivation layer thin film 25, the via region of etching is serving as a contrast
The orthographic projection of substrate, is more than the second predeterminable range with overlapping region in minimum range E of the orthographic projection of underlay substrate.
Step 4, as shown in figure 4d, is fully retained region C to photoresist and photoresist part retains the photoresist of region B
Thin film carries out ashing process, removes photoresist part completely and retains photoresist film 26 corresponding for region B to expose above-mentioned friendship
Passivation layer thin film 25 in folded region, part is removed photoresist and the photoresist film 26 of region C is fully retained simultaneously.
Step 5, as shown in fig 4e, utilizes the passivation layer thin film 25 in etching technics etching overlapping region, exposes drain electrode
One end of figure 24, to form overlap joint via 27.
Step 6, as shown in fig. 4f, removes the photoresist film 26 that region C is fully retained.
Based on above step, in the specific implementation, the size of above-mentioned first predeterminable range can be arranged according to actual needs,
As long as ensure that the corresponding insulating barrier of figure with pixel electrode and the figure overlapping region of drain electrode is not etched to cause
Existing hole is the most permissible.In the embodiment of the present invention, Etch Passivation thin film and insulating layer of thin-film use dry etching, typically,
When thin film is performed etching, not only can perform etching on the direction of vertical thin-film, also can in the direction be parallel to thin film
Having certain etch amount, the maximum that the direction etches is referred to as lateral etching amount, its size has with the thickness of material, thin film
Relation.Such as, at identical conditions, for the material of easily etching, corresponding lateral etching amount is relatively big, for being not easy to carve
The material of erosion, corresponding lateral etching amount is less；Generally, the material of passivation layer thin film is easier than the material of insulating layer of thin-film carves
Erosion, and passivation layer thin film can be thicker than insulating layer of thin-film, thus, the lateral etching amount of passivation layer thin film is greater than insulating layer of thin-film
Lateral etching amount.Based on this, in the present embodiment, the first predeterminable range can be not less than horizontal quarter during Etch Passivation thin film 25
Erosion amount.So, when carrying out step 3, the figure that can limit figure and drain electrode that etching scope is unable to reach pixel electrode is handed over
The passivation layer thin film that folded region is corresponding, and the lateral etching amount of insulating layer of thin-film is less than the lateral etching amount of passivation layer thin film,
The final etching scope that the most just can limit is unable to reach the insulation that the figure of pixel electrode is corresponding with the figure overlapping region of drain electrode
Layer film, also would not etch in the insulating layer of thin-film that the figure of pixel electrode is corresponding with the figure overlapping region of drain electrode and portal
Hole, it is to avoid undercutting is bad.
It is preferred that passivation layer thin film is silicon nitride, silicon oxide or silicon oxynitride；The thickness of passivation layer thin film in the range ofLateral etching amount during Etch Passivation thin film is 1 μm～2 μm.
Below it is only the illustration that carries out of the material to passivation layer thin film, thickness and corresponding lateral etching amount, and
Non-limiting.
Equally, above-mentioned second predeterminable range can be not less than lateral etching amount during etching insulating layer thin film 23.So, exist
During the figure passivation layer thin film corresponding with the figure overlapping region of drain electrode of step 5 etching pixel electrode, formation in step 3
The via of passivation layer thin film just can limit etching scope and be unable to reach the figure of pixel electrode and the figure overlapping region of drain electrode
Corresponding insulating layer of thin-film, when carrying out step 5, also would not be at the figure overlapping region of the figure of pixel electrode Yu drain electrode
Corresponding insulating layer of thin-film etches hole, it is to avoid undercutting is bad.
It is preferred that insulating layer of thin-film is silicon nitride, silicon oxide or silicon oxynitride；The thickness of insulating layer of thin-film in the range ofLateral etching amount during etching insulating layer thin film is 0.5 μm～1.5 μm.
Below it is only the material to insulating layer of thin-film, thickness range, the illustration that the size of lateral etching amount is carried out, and
Non-limiting.
Based on same inventive concept, the embodiment of the present invention also provides for a kind of display base plate, this display base plate be use with
Method making described in upper any embodiment obtains.
Based on same inventive concept, the embodiment of the present invention also provides for a kind of display floater, and this display floater includes above
Display base plate described in embodiment.
Based on same inventive concept, the embodiment of the present invention also provides for a kind of display device, this display device include as with
Display floater described in upper embodiment.This display device can apply to mobile phone, panel computer, television set, display, notebook
Any product with display function or the parts such as computer, DPF, navigator.
In display base plate, its manufacture method, display floater and display device that the embodiment of the present invention provides, aobvious owing to making
During showing substrate, the figure of the region distance pixel electrode of removal completely in photoresist film is overlapping with the figure of drain electrode
There is certain distance in region, as such, it is possible to limit etching scope cannot arrive the overlapping of the figure of pixel electrode and the figure of drain electrode
The insulating layer of thin-film that region is corresponding, serves barrier effect, the insulating layer of thin-film protecting this region is not etched, it is to avoid picture
There is hole in the insulating layer of thin-film that the figure of element electrode is corresponding with the overlapping region of the figure of drain electrode, reduces the wind that undercutting is bad
Danger, improves product yield.
Obviously, those skilled in the art can carry out various change and the modification essence without deviating from the present invention to the present invention
God and scope.So, if these amendments of the present invention and modification belong to the scope of the claims in the present invention and equivalent technologies thereof
Within, then the present invention is also intended to comprise these change and modification.
Claims (9)
1. the manufacture method of a display base plate, it is characterised in that the method includes:
Underlay substrate sequentially forms the figure of the pixel electrode of stacking, insulating layer of thin-film, the figure of drain electrode, passivation layer thin
Film and photoresist film；Wherein, the figure of described pixel electrode includes the overlapping region of the figure with described drain electrode and without handing over
Folded region；
Utilize intermediate tone mask version that described photoresist film is exposed development, described photoresist film is formed photoresist
Remove region completely, photoresist part retains region and photoresist is fully retained region；Region removed completely by described photoresist
It is positioned at region corresponding with the region of described no overlap in described photoresist film, and region removed completely by described photoresist
In the orthographic projection of described underlay substrate, it is more than first with described overlapping region in the minimum range of the orthographic projection of described underlay substrate
Predeterminable range；Described photoresist part retains overlapping region described in region overlay and removes completely to described photoresist from this region
Region between region；
Utilizing etching technics and described photoresist film, in described passivation layer thin film and described insulating layer of thin-film, etching forms institute
State the figure of pixel electrode and the overlap joint via of the figure of described drain electrode.
Method the most according to claim 1, it is characterised in that utilize etching technics and described photoresist film, described
In passivation layer thin film and described insulating layer of thin-film, etching forms the figure of described pixel electrode and the overlap joint of the figure of described drain electrode
Via, including:
Utilize etching technics and described photoresist to remove region completely, etching be positioned at described passivation layer thin film via and described absolutely
Via in edge layer thin film；Wherein, the via region etched in described passivation layer thin film is at described underlay substrate just
Projection, is more than the second predeterminable range with described overlapping region in the minimum range of the orthographic projection of described underlay substrate；
The photoresist film that photoresist is fully retained region and photoresist part reservation region carries out ashing process, removes completely
Photoresist part retains photoresist film corresponding to region to expose the passivation layer thin film in described overlapping region, part simultaneously
Remove photoresist and the photoresist film in region is fully retained；
Utilize etching technics to etch the passivation layer thin film in described overlapping region, expose one end of the figure of described drain electrode, with
Form described overlap joint via.
Method the most according to claim 2, it is characterised in that described first predeterminable range is not less than etching described passivation layer
Lateral etching amount during thin film.
Method the most according to claim 3, it is characterised in that described passivation layer thin film is silicon nitride, silicon oxide or nitrogen
Silicon oxide；The thickness of described passivation layer thin film in the range ofDuring described etching described passivation layer thin film
Lateral etching amount is 1 μm～2 μm.
Method the most according to claim 4, it is characterised in that described second predeterminable range is not less than etching described insulating barrier
Lateral etching amount during thin film.
Method the most according to claim 5, it is characterised in that described insulating layer of thin-film is silicon nitride, silicon oxide or nitrogen
Silicon oxide；The thickness of described insulating layer of thin-film in the range ofHorizontal stroke during the described insulating layer of thin-film of described etching
It is 0.5 μm～1.5 μm to etch amount.
7. a display base plate, it is characterised in that described display base plate is to use the method described in any one of claim 1～6
Making obtains.
8. a display floater, it is characterised in that described display floater includes display base plate as claimed in claim 7.
9. a display device, it is characterised in that described display device includes display floater as claimed in claim 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610851918.6A CN106206623B (en) | 2016-09-26 | 2016-09-26 | A kind of display base plate, its production method, display panel and display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610851918.6A CN106206623B (en) | 2016-09-26 | 2016-09-26 | A kind of display base plate, its production method, display panel and display device |
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| Publication Number | Publication Date |
|---|---|
| CN106206623A true CN106206623A (en) | 2016-12-07 |
| CN106206623B CN106206623B (en) | 2019-03-01 |
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| CN201610851918.6A Expired - Fee Related CN106206623B (en) | 2016-09-26 | 2016-09-26 | A kind of display base plate, its production method, display panel and display device |
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| CN106206623B (en) | 2019-03-01 |
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