CN106206474B - packaging structure for improving Frit packaging mechanical strength and packaging method thereof - Google Patents
packaging structure for improving Frit packaging mechanical strength and packaging method thereof Download PDFInfo
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- CN106206474B CN106206474B CN201610794325.0A CN201610794325A CN106206474B CN 106206474 B CN106206474 B CN 106206474B CN 201610794325 A CN201610794325 A CN 201610794325A CN 106206474 B CN106206474 B CN 106206474B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000002096 quantum dot Substances 0.000 claims abstract description 73
- 239000002120 nanofilm Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000005357 flat glass Substances 0.000 claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 239000010408 film Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000002131 composite material Substances 0.000 claims abstract description 7
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 239000006059 cover glass Substances 0.000 claims description 31
- 238000005538 encapsulation Methods 0.000 claims description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000835 fiber Substances 0.000 claims description 5
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 3
- 238000010146 3D printing Methods 0.000 claims description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 3
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 230000002787 reinforcement Effects 0.000 claims 4
- 239000011521 glass Substances 0.000 abstract description 25
- 230000035882 stress Effects 0.000 abstract description 12
- 238000003466 welding Methods 0.000 abstract description 9
- 239000000872 buffer Substances 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 230000008646 thermal stress Effects 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000004568 cement Substances 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/298—Semiconductor material, e.g. amorphous silicon
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Laser Beam Processing (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
The invention discloses a packaging structure for improving Frit packaging mechanical strength and a packaging method thereof, wherein a metal film layer is manufactured on a substrate; preparing a Frit packaging layer and an inorganic quantum dot nano film layer in a packaging area of the cover plate glass; butting the cover plate glass with the packaging area of the substrate; irradiating the packaging areas of the cover plate glass and the substrate by a light source to weld and seal the cover plate glass and the substrate; according to the invention, the Frit packaging strength is enhanced by adopting the inorganic quantum dot nano film layer, and the molten Frit packaging layer can penetrate into the gap between the nano film layers to form a glass Frit and nano film layer composite enhancement system, so that the welding strength is increased, and the adhesion force between the Frit packaging layer and the cover plate glass is improved; meanwhile, a uniform and compact thin film layer formed by the inorganic quantum dot nano thin film layer can play the roles of a buffer layer and stress release when the cover plate glass is extruded; the quantum dots can also increase laser absorption, and a smaller laser welding Frit packaging layer can be adopted, so that the thermal stress impact of the screen body is reduced.
Description
Technical Field
The invention relates to the technical field of display, in particular to a packaging structure for improving Frit packaging mechanical strength and a packaging method thereof.
Background
At present, the display screen adopts Frit packaging and film packaging. Frit is printed on cover glass in Frit packaging, the Frit is moved and heated by laser beams to be melted to form airtight packaging, and the Frit is melted on a glass substrate to form a layer of sealing body. The defects of the packaging method are that the adhesion force of the glass material and the surface of the cover plate is insufficient, and the glass material cannot provide enough mechanical strength; meanwhile, the contact part of the two pieces of glass has insufficient strength, so that the glass is easy to crack and the like when being extruded and impacted.
Chinese patent document CN 103102075 discloses a method and apparatus for sealing with glass frit, the glass frit comprises sealing glass and filler, the filler comprises inorganic quantum dot material, firstly, the glass frit is dispersed in a carrier to obtain glass cement; depositing glass cement on the packaging area of the first substrate; preheating the glass cement on the packaging area to obtain inorganic glass; pressing the second substrate and the first substrate; and irradiating the packaging pattern area by using laser so as to melt the inorganic glass to form packaging glass, and sealing the area surrounded by the packaging area of the first substrate. The above patent document is a method of doping an inorganic quantum dot material in a frit and premixing the same, in the process of encapsulation, the mixed frit is irradiated with laser to melt the same for the purpose of encapsulation, the mass fraction of the inorganic quantum dot material in the frit is only 0.1-10%, although the encapsulation sealing ability of the encapsulation surface can be enhanced, when a glass cover plate is vertically mechanically pressed, it is difficult to effectively release the pressing stress, and the pressing crack is easily caused.
Disclosure of Invention
Therefore, the invention provides a packaging structure for improving Frit packaging mechanical strength and a packaging method thereof, aiming at solving the problem that the glass cannot effectively release extrusion stress and impact stress when a display screen body is extruded or impacted from the front side, so that the glass is broken and fragile.
The adopted technical scheme is as follows:
On one hand, the invention provides a packaging structure for improving the Frit packaging mechanical strength, which sequentially comprises a substrate, a metal film layer, a Frit packaging layer and cover glass, wherein the Frit packaging layer is positioned in a packaging area of the cover glass, one side of the Frit packaging layer is also provided with an inorganic quantum dot nano film layer, and the inorganic quantum dot nano film layer is positioned between the Frit packaging layer and the cover glass or between the Frit packaging layer and the metal film layer.
On the other hand, the invention also provides a packaging method for improving the Frit packaging mechanical strength, wherein a metal film layer is manufactured on the substrate; preparing a Frit packaging layer and an inorganic quantum dot nano film layer in a packaging area of the cover plate glass; butting the cover plate glass with the packaging area of the substrate; and irradiating the packaging areas of the cover plate glass and the substrate by a light source to weld and seal the cover plate glass and the substrate.
Preparing an inorganic quantum dot nano film layer on the cover plate glass, then preparing a Frit packaging layer on the inorganic quantum dot nano film layer, butting a metal film layer on the substrate with the Frit packaging layer, and irradiating by a laser light source to enable the cover plate glass and the substrate to be welded and sealed.
The thickness of the prepared inorganic quantum dot nano film layer is 100 nm-1000 nm.
Preparing a Frit packaging layer on the cover plate glass, then preparing an inorganic quantum dot nano thin film layer on the Frit packaging layer, butting a metal film layer on the substrate with the inorganic quantum dot nano thin film layer, and irradiating by a laser light source to enable the cover plate glass and the substrate to be welded and sealed.
the thickness of the prepared inorganic quantum dot nano film layer is 500 nm-2000 nm.
The thickness of the prepared Frit packaging layer is 4-6 mu m.
The method for preparing the inorganic quantum dot nano film layer comprises one of a vapor deposition method, a 3D printing method, an ink-jet printing method and a spin-coating method.
The columnar fibers in the prepared inorganic quantum dot nano film layer are vertical to the cover plate glass.
The inorganic quantum dot nano film layer comprises at least one of cadmium selenide, zinc sulfide, zinc selenide, cadmium oxide, cadmium telluride and zinc oxide.
The technical scheme of the invention has the following advantages:
A. According to the invention, the Frit packaging strength is enhanced by adopting the inorganic quantum dot nano film layer, the inorganic quantum dot nano film layer is arranged between the cover plate glass and the substrate, and the inorganic quantum dot nano film layer is similar to columnar fibers and plays a role of enhancing and compounding with the cover plate glass. The melted Frit packaging layer can penetrate into a gap between the nano film layers to form a Frit packaging layer and nano film layer composite reinforcing system, so that the welding strength is increased, a large adsorption area is provided by the uneven surface of the nano particles, and the adhesion force between the Frit packaging layer and the cover plate glass is improved; meanwhile, a uniform and compact thin film layer formed by the inorganic quantum dot nano thin film layer can play the roles of a buffer layer and stress release when the cover plate glass is extruded; the quantum dots can also increase laser absorption, and a smaller laser welding Frit packaging layer can be adopted, so that the thermal stress impact of the screen body is reduced.
B. according to the invention, the inorganic quantum dot nano film layer is added between the cover plate glass and the substrate, the adhesion and the welding strength between the cover plate and the glass frit are enhanced through the inorganic quantum dot nano film layer, the mechanical strength of the sealing layer between the cover plate glass and the substrate is improved, the inorganic quantum dot nano film layer can play a role of a buffer layer, the laser absorption can be increased, and the laser power is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic structural diagram of a first embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a second embodiment of the present invention;
FIG. 3 is a schematic view of the stress buffering of the inorganic quantum dot nano-film layer when being pressed by the cover glass;
Fig. 4 is a displacement distribution diagram of the cover glass moving downward when being pressed by the outside.
Description of reference numerals:
1-cover glass; 2-Frit packaging layer; 3-inorganic quantum dot nano-film layer; 4-a metal film layer; 5-substrate.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
the invention provides a packaging structure for improving Frit packaging mechanical strength, which comprises a substrate 5, a metal film layer 4, a Frit packaging layer 2 and a cover glass 1 in sequence as shown in figures 1 and 2, wherein the Frit packaging layer 2 is positioned in a packaging area of the cover glass 1, an inorganic quantum dot nano film layer 3 is further arranged on one side of the Frit packaging layer 2, the inorganic quantum dot nano film layer 3 is positioned between the Frit packaging layer 2 and the cover glass 1, or the inorganic quantum dot nano film layer 3 is positioned between the Frit packaging layer 2 and the metal film layer 4.
fig. 1 shows a first structural form provided by the present invention, in which an inorganic quantum dot nano thin film layer 3 is located between a Frit encapsulation layer 2 and a cover glass 1.
Fig. 2 shows a second structural form provided by the present invention, in which the inorganic quantum dot nano-thin film layer 3 is located between the Frit encapsulation layer 2 and the metal film layer 4.
The substrate is a 0LED substrate, and can provide the effects of electric connection, protection, support, heat dissipation, assembly and the like for the chip so as to realize the purposes of multi-pin, reduction of the volume of a packaged product, improvement of electric performance and heat dissipation, and ultrahigh density or multi-chip modularization.
The above two package structures are described in detail below.
Example 1
As shown in fig. 1, a metal film layer 4 is formed on a substrate 5, an inorganic quantum dot nano thin film layer 3 is formed on a cover glass 1, a Frit sealing layer 2 is formed on the inorganic quantum dot nano thin film layer 3, the metal film layer 4 on the substrate 5 is butted with the Frit sealing layer 2 on the cover glass 1, and the cover glass 1 and the substrate 5 are welded and sealed by light source irradiation. The sealing region of the cover glass 1 and the substrate 5 is preferably sealed by a laser welding method.
The thickness of the prepared inorganic quantum dot nano film layer 3 is 100 nm-1000 nm, and the thickness of the prepared Frit packaging layer 2 is 4-6 mu m; the thickness of the inorganic quantum dot nano film layer 3 is preferably 800nm, and the thickness of the Frit encapsulation layer 2 is preferably 5 μm.
The method for preparing the inorganic quantum dot nano film layer comprises one of a vapor deposition method, a 3D printing method, an ink-jet printing method and a spin coating method.
When the inorganic quantum dot nano-film layer 3 is prepared, the columnar fibers are arranged perpendicular to the cover plate glass 1.
The inorganic quantum dot nano film layer 3 comprises at least one of cadmium selenide, zinc sulfide, zinc selenide, cadmium oxide, cadmium telluride and zinc oxide.
According to the invention, the inorganic quantum dot nano film layer 3 is of a nanorod structure to enhance the Frit packaging strength, and the inorganic quantum dot nano film layer 3 is similar to a columnar fiber and plays a role in enhancing and compounding with the Frit packaging layer 2. The melting Frit packaging layer 2 can penetrate into gaps among the nano film layers to form a composite reinforcing system of the Frit packaging layer 2 and the inorganic quantum dot nano film layer 3, so that the welding strength is increased; because the uneven surface of the nano particles provides a large adsorption area, the adhesion force of the Frit packaging layer 2 and the cover glass 1 is improved; meanwhile, a uniform and compact thin film layer formed by the inorganic quantum dot nano thin film layer 3 can play a role of a buffer layer and a stress releasing role when the glass is extruded; the inorganic quantum dots can also increase laser absorption, and a smaller laser can be adopted to weld the Frit packaging layer 2, so that the thermal stress impact of the screen body is reduced.
Example 2
As shown in fig. 2, unlike embodiment 1: the manufacturing method comprises the steps of manufacturing a metal film layer 4 on a substrate 5, firstly preparing a Frit packaging layer 2 on cover glass 1, then preparing an inorganic quantum dot nano film layer 3 on the Frit packaging layer 2, butting the metal film layer 4 on the substrate 5 with the inorganic quantum dot nano film layer 3 on the cover glass 1, and enabling the cover glass 1 and the substrate 5 to be welded and sealed through light source irradiation, so that the structure shown in the figure 2 is manufactured. The sealing region of the cover glass 1 and the substrate 5 is preferably sealed by a laser welding method.
The thickness of the prepared inorganic quantum dot nano film layer 3 is 500 nm-2000 nm, the thickness of the prepared Frit packaging layer 2 is 4-6 mu m, the thickness of the preferred inorganic quantum dot nano film layer 3 is 1000nm, and the thickness of the preferred Frit packaging layer 2 is 5 mu m.
In the two embodiments, the inorganic quantum dot nano thin film layer 3 is added between the glass cover plate 1 and the substrate 5, the adhesion and the welding strength of the cover plate glass 1 and the Frit packaging layer 2 are enhanced through the inorganic quantum dot nano thin film layer 3, the mechanical strength of the sealing layer between the cover plate glass 1 and the substrate 5 is improved, and the inorganic quantum dot nano thin film layer 3 can play a role of a buffer layer, can increase laser absorption and reduce laser power.
Fig. 3 shows a schematic diagram of stress buffering of the inorganic quantum dot nano-film layer when being pressed by the glass cover plate. As can be seen from the figure, the inorganic quantum dot nano thin film layer between the cover glass and the substrate forms a uniform and compact thin film layer, and plays the role of a buffer layer and stress release when the cover glass is extruded.
Fig. 4 shows a displacement distribution in which the cover glass moves downward when being pressed from the outside. It can be seen that in the first stage (between 0 and 0.1), the displacement of the cover glass is kept very small, which is approximately 0, and the inorganic quantum dot nano film layer buffers and releases the extrusion stress of the cover glass; in the second stage (more than 0.1), the displacement of the cover glass is increased sharply, which indicates that the stress exceeds the release limit of the inorganic quantum dot nano film layer, the quantum dots are pressed into the glass, and the glass is broken.
If the inorganic quantum dot nano film layer is not arranged, the extrusion stress is not released, which is equivalent to the second stage in fig. 4, and the glass is in direct contact and is easy to break.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A packaging structure for improving Frit packaging mechanical strength sequentially comprises a substrate, a metal film layer and cover plate glass, and is characterized by further comprising a composite reinforcement body, wherein the composite reinforcement body comprises an inorganic quantum dot nano film layer and a Frit packaging layer which is melted and permeated into a gap between the inorganic quantum dot nano film layers; the composite reinforcement body is arranged between the metal film layer and the cover plate glass, and the Frit packaging layer is positioned in a packaging area of the cover plate glass; the inorganic quantum dot nano film layer is positioned between the Frit packaging layer and the cover plate glass, or the inorganic quantum dot nano film layer is positioned between the Frit packaging layer and the metal film layer.
2. A packaging method for improving Frit packaging mechanical strength is characterized in that a metal film layer is manufactured on a substrate; preparing a Frit packaging layer and an inorganic quantum dot nano film layer in a packaging area of the cover plate glass, and melting the Frit packaging layer to enable the Frit packaging layer to penetrate into gaps between the nano film layers to form a composite reinforcement; butting the cover plate glass with the packaging area of the substrate; and irradiating the packaging areas of the cover plate glass and the substrate by a light source to weld and seal the cover plate glass and the substrate.
3. The packaging method according to claim 2, wherein an inorganic quantum dot nano thin film layer is formed on the cover glass, a Frit packaging layer is formed on the inorganic quantum dot nano thin film layer, the metal film layer on the substrate is butted with the Frit packaging layer, and the cover glass and the substrate are welded and sealed by irradiation of a laser light source.
4. The encapsulation method according to claim 3, wherein the thickness of the prepared inorganic quantum dot nano thin film layer is 100nm to 1000 nm.
5. The packaging method according to claim 2, wherein a Frit packaging layer is prepared on the cover glass, then an inorganic quantum dot nano thin film layer is prepared on the Frit packaging layer, a metal film layer on the substrate is butted with the inorganic quantum dot nano thin film layer, and the cover glass and the substrate are welded and sealed by irradiation of a laser light source.
6. The encapsulation method according to claim 5, wherein the thickness of the prepared inorganic quantum dot nano thin film layer is 500nm to 2000 nm.
7. The method for encapsulating according to claim 2, wherein the Frit encapsulation layer is prepared to have a thickness of 4 to 6 μm.
8. The encapsulation method according to claim 7, wherein the method for preparing the inorganic quantum dot nano thin film layer comprises one of a vapor deposition method, a 3D printing method, an ink jet printing method and a spin coating method.
9. The encapsulation method according to claim 8, wherein the columnar fibers in the prepared inorganic quantum dot nano-film layer are perpendicular to the cover glass.
10. the encapsulation method according to claim 9, wherein the inorganic quantum dot nano-thin film layer comprises at least one of cadmium selenide, zinc sulfide, zinc selenide, cadmium oxide, cadmium telluride, and zinc oxide.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610794325.0A CN106206474B (en) | 2016-08-31 | 2016-08-31 | packaging structure for improving Frit packaging mechanical strength and packaging method thereof |
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| CN201610794325.0A CN106206474B (en) | 2016-08-31 | 2016-08-31 | packaging structure for improving Frit packaging mechanical strength and packaging method thereof |
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| CN106206474A CN106206474A (en) | 2016-12-07 |
| CN106206474B true CN106206474B (en) | 2019-12-13 |
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| CN114675439B (en) * | 2022-03-30 | 2023-11-28 | 广州华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179113A (en) * | 2006-11-07 | 2008-05-14 | 康宁股份有限公司 | Hermetic seal for light emitting display device, method, and apparatus |
| CN103258971A (en) * | 2013-04-27 | 2013-08-21 | 上海和辉光电有限公司 | Encapsulation method and device of display element |
| CN104409663A (en) * | 2014-11-12 | 2015-03-11 | 京东方科技集团股份有限公司 | Encapsulating method, encapsulating structure and display device |
| TW201521194A (en) * | 2013-11-28 | 2015-06-01 | Innolux Corp | Organic light emitting diode display panel and method for manufacturing the same |
| CN105810796A (en) * | 2016-04-21 | 2016-07-27 | 深圳市华星光电技术有限公司 | Quantum-dot material glass plate and fabrication method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100330309A1 (en) * | 2009-06-30 | 2010-12-30 | Guardian Industries Corp. | Frit or solder glass compound including beads, and assemblies incorporating the same |
| TWI424387B (en) * | 2010-03-31 | 2014-01-21 | Au Optronics Corp | Display panel package structure and fabricating method thereof |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179113A (en) * | 2006-11-07 | 2008-05-14 | 康宁股份有限公司 | Hermetic seal for light emitting display device, method, and apparatus |
| CN103258971A (en) * | 2013-04-27 | 2013-08-21 | 上海和辉光电有限公司 | Encapsulation method and device of display element |
| TW201521194A (en) * | 2013-11-28 | 2015-06-01 | Innolux Corp | Organic light emitting diode display panel and method for manufacturing the same |
| CN104409663A (en) * | 2014-11-12 | 2015-03-11 | 京东方科技集团股份有限公司 | Encapsulating method, encapsulating structure and display device |
| CN105810796A (en) * | 2016-04-21 | 2016-07-27 | 深圳市华星光电技术有限公司 | Quantum-dot material glass plate and fabrication method thereof |
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Denomination of invention: A packaging structure and method for improving the mechanical strength of frit packaging Effective date of registration: 20201221 Granted publication date: 20191213 Pledgee: Xin Xin Finance Leasing Co.,Ltd. Pledgor: KunShan Go-Visionox Opto-Electronics Co.,Ltd. Registration number: Y2020980009652 |
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