CN106206474A - A kind of encapsulating structure improving Frit packaging machinery intensity and method for packing thereof - Google Patents
A kind of encapsulating structure improving Frit packaging machinery intensity and method for packing thereof Download PDFInfo
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- CN106206474A CN106206474A CN201610794325.0A CN201610794325A CN106206474A CN 106206474 A CN106206474 A CN 106206474A CN 201610794325 A CN201610794325 A CN 201610794325A CN 106206474 A CN106206474 A CN 106206474A
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- frit
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 26
- 238000012856 packing Methods 0.000 title claims abstract description 15
- 239000002096 quantum dot Substances 0.000 claims abstract description 71
- 239000010409 thin film Substances 0.000 claims abstract description 69
- 239000005357 flat glass Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000011521 glass Substances 0.000 claims description 25
- 238000005538 encapsulation Methods 0.000 claims description 7
- 239000000835 fiber Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Chemical compound [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 238000003032 molecular docking Methods 0.000 claims 2
- 239000011787 zinc oxide Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 103
- 230000035882 stress Effects 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 8
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 238000003466 welding Methods 0.000 abstract description 5
- 239000002131 composite material Substances 0.000 abstract description 3
- 239000011229 interlayer Substances 0.000 abstract description 3
- 238000005728 strengthening Methods 0.000 abstract description 3
- 230000008646 thermal stress Effects 0.000 abstract description 3
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000004568 cement Substances 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000002508 compound effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/298—Semiconductor material, e.g. amorphous silicon
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Joining Of Glass To Other Materials (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention discloses a kind of encapsulating structure improving Frit packaging machinery intensity and method for packing thereof, substrate makes metallic diaphragm；Packaging area at cover-plate glass prepares Frit encapsulated layer and inorganic-quantum-dot nano thin-film layer；Cover-plate glass is docked with the packaging area of substrate；Irradiated the packaging area of cover-plate glass and substrate by light source, make frit seal between cover-plate glass and substrate；The present invention uses inorganic-quantum-dot nano thin-film layer to strengthen Frit package strength, melted Frit encapsulated layer penetrates into the gap of nano thin-film interlayer, form frit and nano thin-film layer composite strengthening system, increase heat seal strength, improve the adhesion of Frit encapsulated layer and cover-plate glass；Meanwhile, the even compact thin layer that inorganic-quantum-dot nano thin-film layer is formed can play cushion and the effect of release stress when cover-plate glass is squeezed；Quantum dot can also increase laser absorption, can use less laser welding Frit encapsulated layer, reduces the Thermal Stress of screen body.
Description
Technical field
The present invention relates to Display Technique field, specifically, relate to a kind of encapsulation knot improving Frit packaging machinery intensity
Structure and method for packing thereof.
Background technology
Display screen uses Frit (frit) encapsulation and thin-film package two kinds at present.Frit is printed on lid by Frit encapsulation
On glass sheet, use laser beam to move heated frit fusing and form air hermetic encapsulation, frit melted shape on the glass substrate
Become one layer of seal.The defect using this packaged type is that frit is not enough with the adhesion of lid surface, it is impossible to provide foot
Enough mechanical strengths；Simultaneously as the local insufficient strength of two pieces of glass contact, the most chipping when being squeezed and impact
Etc. problem.
Chinese patent literature CN 103102075 discloses and a kind of uses frit to carry out the method and device sealed, should
Frit includes that seal glass and filler, described filler include inorganic-quantum-dot material, is first disperseed in the carrier by frit,
Obtain glass cement；Glass cement is deposited on the packaging area of first substrate；Glass cement on packaging area is preheated, obtains
Obtain unorganic glass；By second substrate and first substrate pressing；Laser is used to irradiate encapsulation area of the pattern, so that unorganic glass melts
Melt rear shape packaged glass, the region of the packaging area encirclement of described first substrate is sealed.Above-mentioned patent documentation is by nothing
Machine quanta point material is entrained in frit the method carrying out being pre-mixed, and in encapsulation process, the frit to mixing carries out laser
Irradiation makes its melted reaching encapsulate purpose, and the mass fraction of the inorganic-quantum-dot material in frit is only 0.1-10%, although
The potting ability of encapsulating face can be strengthened, but when glass cover-plate is extruded by vertical mechanical, it is difficult to effectively release extruding should
Power, easily causes extruding and ruptures.
Summary of the invention
Therefore, the present invention is to solve that display screen body cannot effectively discharge glass when by front extruding or impact
Extrusion stress and impact stress, thus cause the frangible phenomenon that ruptures, the invention provides a kind of raising Frit packaging machinery strong
The encapsulating structure of degree and method for packing thereof.
The technical scheme used is as follows:
On the one hand, the invention provides a kind of encapsulating structure improving Frit packaging machinery intensity, include substrate, gold successively
Belonging to film layer, Frit encapsulated layer and cover-plate glass, described Frit encapsulated layer is positioned at the packaging area of described cover-plate glass, described Frit
The side of encapsulated layer is additionally provided with inorganic-quantum-dot nano thin-film layer, and described inorganic-quantum-dot nano thin-film layer is positioned at described Frit envelope
Between dress layer and described cover-plate glass, or described inorganic-quantum-dot nano thin-film layer is positioned at described Frit encapsulated layer and metal film
Between Ceng.
On the other hand, present invention also offers a kind of method for packing improving Frit packaging machinery intensity, substrate is made
Make metallic diaphragm；Packaging area at cover-plate glass prepares Frit encapsulated layer and inorganic-quantum-dot nano thin-film layer；By cover plate glass
Glass docks with the packaging area of substrate；Irradiated the packaging area of cover-plate glass and substrate by light source, make cover-plate glass and substrate
Between frit seal.
Cover-plate glass is prepared inorganic-quantum-dot nano thin-film layer, then prepares on inorganic-quantum-dot nano thin-film layer
Frit encapsulated layer, docks the metallic diaphragm on substrate with Frit encapsulated layer, is irradiated by LASER Light Source and makes cover-plate glass and base
Frit seal is reached between plate.
The thickness of prepared inorganic-quantum-dot nano thin-film layer is 100nm～1000nm.
Cover-plate glass is prepared Frit encapsulated layer, on Frit encapsulated layer, then prepares inorganic-quantum-dot nano thin-film
Layer, the metallic diaphragm on substrate dock with inorganic-quantum-dot nano thin-film layer, by LASER Light Source irradiation make cover-plate glass and
Frit seal is reached between substrate.
The thickness of prepared inorganic-quantum-dot nano thin-film layer is 500nm～2000nm.
The thickness of prepared Frit encapsulated layer is 4～6 μm.
The described method preparing inorganic-quantum-dot nano thin-film layer includes vapour deposition process, 3D impact system, inkjet printing
One in method and spin-coating method.
The prepared columnar fiber in inorganic-quantum-dot nano thin-film layer is perpendicular to cover-plate glass.
Described inorganic-quantum-dot nano thin-film layer includes cadmium selenide, zinc sulfide, zinc selenide, Aska-Rid., cadmium telluride, oxidation
At least one in zinc.
Technical solution of the present invention, has the advantage that
A. the present invention uses inorganic-quantum-dot nano thin-film layer to strengthen Frit package strength, inorganic-quantum-dot nano thin-film layer
Being placed between cover-plate glass and substrate, inorganic-quantum-dot nano thin-film layer is similar to columnar fiber, plays enhancing again with cover-plate glass
The effect closed.Melted Frit encapsulated layer penetrates into the gap of nano thin-film interlayer, forms Frit encapsulated layer and nano thin-film
Layer composite strengthening system, increases heat seal strength, and the uneven surface of nano-particle provides a big adsorption area, improves Frit
Encapsulated layer and the adhesion of cover-plate glass；Meanwhile, the even compact thin layer that inorganic-quantum-dot nano thin-film layer is formed can be
Cushion and the effect of release stress is played when cover-plate glass is squeezed；Quantum dot can also increase laser absorption, can use
Less laser welding Frit encapsulated layer, reduces the Thermal Stress of screen body.
B. the present invention will increase inorganic-quantum-dot nano thin-film layer between cover-plate glass and substrate, be received by inorganic-quantum-dot
Rice thin layer strengthens the adhesion between cover plate and frit and heat seal strength, improves the machinery of sealant between cover-plate glass and substrate
Intensity, inorganic-quantum-dot nano thin-film layer can play the effect of cushion, and can increase laser absorption, reduces laser merit
Rate.
Accompanying drawing explanation
In order to be illustrated more clearly that the specific embodiment of the invention or technical scheme of the prior art, below will be to specifically
In embodiment or description of the prior art, the required accompanying drawing used is briefly described, it should be apparent that, in describing below
Accompanying drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not paying creative work
Put, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of the first embodiment provided by the present invention；
Fig. 2 is the structural representation of the second embodiment provided by the present invention；
Fig. 3 is the inorganic-quantum-dot nano thin-film layer stress buffer schematic diagram when being extruded by cover-plate glass；
Fig. 4 is the Displacements Distribution figure that cover-plate glass moves down when by external world's extruding.
Description of reference numerals:
1-cover-plate glass；2-Frit encapsulated layer；3-inorganic-quantum-dot nano thin-film layer；4-metallic diaphragm；5-substrate.
Detailed description of the invention
Below in conjunction with accompanying drawing, technical scheme is clearly and completely described, it is clear that described enforcement
Example is a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill
The every other embodiment that personnel are obtained under not making creative work premise, broadly falls into the scope of protection of the invention.
A kind of encapsulating structure improving Frit packaging machinery intensity provided by the present invention, as illustrated in fig. 1 and 2, wraps successively
Including substrate 5, metallic diaphragm 4, Frit encapsulated layer 2 and cover-plate glass 1, Frit encapsulated layer 2 is positioned at the packaging area of cover-plate glass 1,
The side of Frit encapsulated layer 2 is additionally provided with inorganic-quantum-dot nano thin-film layer 3, and inorganic-quantum-dot nano thin-film layer 3 is positioned at Frit envelope
Between dress layer 2 and cover-plate glass 1, or inorganic-quantum-dot nano thin-film layer 3 is between Frit encapsulated layer 2 and metallic diaphragm 4.
Being wherein the first version provided by the present invention in Fig. 1, inorganic-quantum-dot nano thin-film layer 3 therein is positioned at
Between Frit encapsulated layer 2 and cover-plate glass 1.
And Fig. 2 is the second version provided by the present invention, inorganic-quantum-dot nano thin-film layer 3 therein is positioned at
Between Frit encapsulated layer 2 and metallic diaphragm 4.
Here substrate is 0LED substrate, can be chip provide electrically connect, protect, support, dispel the heat, the effect such as assembling, with
Realize many pinizations, reduce encapsulating products volume, improve electrical property and the mesh of thermal diffusivity, VHD or multi-chip module
's.
Below above two encapsulating structure is described in detail.
Embodiment 1
As it is shown in figure 1, make metallic diaphragm 4 on the substrate 5, cover-plate glass 1 is prepared inorganic-quantum-dot nano thin-film
Layer 3, then prepares Frit encapsulated layer 2, by the metallic diaphragm 4 on substrate 5 and cover plate glass on inorganic-quantum-dot nano thin-film layer 3
Frit encapsulated layer 2 on glass 1 docks, and is irradiated by light source and makes to reach frit seal between cover-plate glass 1 and substrate 5.The most logical
Cross the packaging area of laser welding method seal cover board glass 1 and substrate 5.
The thickness of wherein prepared inorganic-quantum-dot nano thin-film layer 3 is 100nm～1000nm, prepared Frit envelope
The thickness of dress layer 2 is 4～6 μm；Preferably inorganic-quantum-dot nano thin-film layer 3 thickness is 800nm, preferred Frit encapsulated layer 2
Thickness is 5 μm.
The method preparing inorganic-quantum-dot nano thin-film layer employed in it includes vapour deposition process, 3D impact system, spray
One in ink impact system and spin-coating method.
The present invention is when preparing inorganic-quantum-dot nano thin-film layer 3, and its columnar fiber presents and is perpendicular to cover-plate glass 1 and sets
Put.
Inorganic-quantum-dot nano thin-film layer 3 therein includes cadmium selenide, zinc sulfide, zinc selenide, Aska-Rid., cadmium telluride, oxygen
Change at least one in zinc.
The present invention uses inorganic-quantum-dot nano thin-film layer 3 for nanorod structure to strengthen Frit package strength, inorganic amount
Son point nano thin-film layer 3 is similar to columnar fiber, plays with Frit encapsulated layer 2 and strengthens compound effect.Melted Frit encapsulated layer 2
Penetrate into the gap of nano thin-film interlayer, form Frit encapsulated layer 2 and the composite strengthening of inorganic-quantum-dot nano thin-film layer 3
System, increases heat seal strength；Owing to the uneven surface of nano-particle provides a big adsorption area, improve Frit encapsulated layer
2 with the adhesion of cover-plate glass 1；Meanwhile, the even compact thin layer that inorganic-quantum-dot nano thin-film layer 3 is formed can be at glass
Cushion and the effect of release stress is played when being squeezed；Inorganic-quantum-dot can also increase laser absorption, can use less
Laser welding Frit encapsulated layer 2, reduces the Thermal Stress of screen body.
Embodiment 2
As in figure 2 it is shown, as different from Example 1: make metallic diaphragm 4 on the substrate 5, on cover-plate glass 1 first
Preparation Frit encapsulated layer 2, then prepares inorganic-quantum-dot nano thin-film layer 3 on Frit encapsulated layer 2, then by the gold on substrate 5
Belong to film layer 4 to dock with the inorganic-quantum-dot nano thin-film layer 3 on cover-plate glass 1, irradiated by light source and make cover-plate glass 1 and substrate
Reach frit seal between 5, prepare structure as shown in Figure 2.Preferably by laser welding method seal cover board glass 1 and substrate 5
Packaging area.
The thickness of prepared inorganic-quantum-dot nano thin-film layer 3 is 500nm～2000nm, prepared Frit encapsulated layer
The thickness of 2 is 4～6 μm, and preferred inorganic-quantum-dot nano thin-film layer 3 thickness is 1000nm, preferred Frit encapsulated layer 2 thickness
It is 5 μm.
In above-mentioned two embodiments, between glass cover-plate 1 and substrate 5, increase inorganic-quantum-dot nano thin-film layer 3, by inorganic
Quantum dot nano thin layer 3 strengthens adhesion and the heat seal strength of cover-plate glass 1 and Frit encapsulated layer 2, improve cover-plate glass 1 with
The mechanical strength of 5 sealants of substrate, inorganic-quantum-dot nano thin-film layer 3 can play the effect of cushion, and can increase
Laser absorption, reduces laser power.
Fig. 3 represents the inorganic-quantum-dot nano thin-film layer stress buffer schematic diagram when being extruded by glass cover-plate.From
It can be seen that the inorganic-quantum-dot nano thin-film layer between cover-plate glass and substrate defines even compact thin film in figure
Layer, plays cushion and the effect of release stress when cover-plate glass is squeezed.
Fig. 4 represent cover-plate glass by the external world extruding time, the Displacements Distribution situation moved down.It will be seen that
In one stage (between 0～0.1), the displacement of cover-plate glass keeps the least state, is similar to 0, represents that inorganic-quantum-dot is received
The extrusion stress of rice thin layer buffering release cap glass sheet；Second stage (＞ 0.1), the displacement of cover-plate glass sharply increases,
Representing that stress has exceeded the release limit of inorganic-quantum-dot nano thin-film layer, quantum dot has been pressed into inside glass, and glass ruptures.
Without inorganic-quantum-dot nano thin-film layer, extrusion stress discharges nowhere, is equivalent to second stage in Fig. 4, glass
Glass directly contacts, and is easily broken.
Obviously, above-described embodiment is only for clearly demonstrating example, and not restriction to embodiment.Right
For those of ordinary skill in the field, can also make on the basis of the above description other multi-form change or
Variation.Here without also cannot all of embodiment be given exhaustive.And the obvious change thus extended out or
Change among still in the protection domain of the invention.
Claims (10)
1. improve an encapsulating structure for Frit packaging machinery intensity, include substrate, metallic diaphragm, Frit encapsulated layer and lid successively
Glass sheet, described Frit encapsulated layer is positioned at the packaging area of described cover-plate glass, it is characterised in that the one of described Frit encapsulated layer
Side is additionally provided with inorganic-quantum-dot nano thin-film layer, and described inorganic-quantum-dot nano thin-film layer is positioned at described Frit encapsulated layer with described
Cover-plate glass between, or described inorganic-quantum-dot nano thin-film layer is between described Frit encapsulated layer and metallic diaphragm.
2. the method for packing improving Frit packaging machinery intensity, it is characterised in that make metallic diaphragm on substrate；At lid
The packaging area of glass sheet prepares Frit encapsulated layer and inorganic-quantum-dot nano thin-film layer；Encapsulation region by cover-plate glass Yu substrate
Territory is docked；Irradiated the packaging area of cover-plate glass and substrate by light source, make frit seal between cover-plate glass and substrate.
Method for packing the most according to claim 2, it is characterised in that prepare inorganic-quantum-dot nanometer thin on cover-plate glass
Film layer, then prepares Frit encapsulated layer on inorganic-quantum-dot nano thin-film layer, is encapsulated with Frit by the metallic diaphragm on substrate
Layer docking, is irradiated by LASER Light Source and makes to reach between cover-plate glass and substrate frit seal.
Method for packing the most according to claim 3, it is characterised in that the thickness of prepared inorganic-quantum-dot nano thin-film layer
Degree is 100nm～1000nm.
Method for packing the most according to claim 2, it is characterised in that prepare Frit encapsulated layer on cover-plate glass, then
Frit encapsulated layer is prepared inorganic-quantum-dot nano thin-film layer, by the metallic diaphragm on substrate and inorganic-quantum-dot nano thin-film
Layer docking, is irradiated by LASER Light Source and makes to reach between cover-plate glass and substrate frit seal.
Method for packing the most according to claim 5, it is characterised in that the thickness of prepared inorganic-quantum-dot nano thin-film layer
Degree is 500nm～2000nm.
Method for packing the most according to claim 2, it is characterised in that the thickness of prepared Frit encapsulated layer is 4～6 μ
m。
Method for packing the most according to claim 7, it is characterised in that described inorganic-quantum-dot nano thin-film layer of preparing
Method includes the one in vapour deposition process, 3D impact system, ink-jet printing process and spin-coating method.
Method for packing the most according to claim 8, it is characterised in that in prepared inorganic-quantum-dot nano thin-film layer
Columnar fiber is perpendicular to cover-plate glass.
Method for packing the most according to claim 9, it is characterised in that described inorganic-quantum-dot nano thin-film layer includes
At least one in cadmium selenide, zinc sulfide, zinc selenide, Aska-Rid., cadmium telluride, zinc oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610794325.0A CN106206474B (en) | 2016-08-31 | 2016-08-31 | packaging structure for improving Frit packaging mechanical strength and packaging method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610794325.0A CN106206474B (en) | 2016-08-31 | 2016-08-31 | packaging structure for improving Frit packaging mechanical strength and packaging method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106206474A true CN106206474A (en) | 2016-12-07 |
| CN106206474B CN106206474B (en) | 2019-12-13 |
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ID=58085689
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114675439A (en) * | 2022-03-30 | 2022-06-28 | 广州华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179113A (en) * | 2006-11-07 | 2008-05-14 | 康宁股份有限公司 | Hermetic seal for light emitting display device, method, and apparatus |
| TW201105601A (en) * | 2009-06-30 | 2011-02-16 | Guardian Industries | Frit or solder glass compound including beads, and assemblies incorporating the same |
| TW201133434A (en) * | 2010-03-31 | 2011-10-01 | Au Optronics Corp | Display panel package structure and fabricating method thereof |
| CN103258971A (en) * | 2013-04-27 | 2013-08-21 | 上海和辉光电有限公司 | Encapsulation method and device of display element |
| CN104409663A (en) * | 2014-11-12 | 2015-03-11 | 京东方科技集团股份有限公司 | Encapsulating method, encapsulating structure and display device |
| TW201521194A (en) * | 2013-11-28 | 2015-06-01 | Innolux Corp | Organic light emitting diode display panel and method for manufacturing the same |
| CN105810796A (en) * | 2016-04-21 | 2016-07-27 | 深圳市华星光电技术有限公司 | Quantum-dot material glass plate and fabrication method thereof |
-
2016
- 2016-08-31 CN CN201610794325.0A patent/CN106206474B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179113A (en) * | 2006-11-07 | 2008-05-14 | 康宁股份有限公司 | Hermetic seal for light emitting display device, method, and apparatus |
| TW201105601A (en) * | 2009-06-30 | 2011-02-16 | Guardian Industries | Frit or solder glass compound including beads, and assemblies incorporating the same |
| TW201133434A (en) * | 2010-03-31 | 2011-10-01 | Au Optronics Corp | Display panel package structure and fabricating method thereof |
| CN103258971A (en) * | 2013-04-27 | 2013-08-21 | 上海和辉光电有限公司 | Encapsulation method and device of display element |
| TW201521194A (en) * | 2013-11-28 | 2015-06-01 | Innolux Corp | Organic light emitting diode display panel and method for manufacturing the same |
| CN104409663A (en) * | 2014-11-12 | 2015-03-11 | 京东方科技集团股份有限公司 | Encapsulating method, encapsulating structure and display device |
| CN105810796A (en) * | 2016-04-21 | 2016-07-27 | 深圳市华星光电技术有限公司 | Quantum-dot material glass plate and fabrication method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114675439A (en) * | 2022-03-30 | 2022-06-28 | 广州华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| CN114675439B (en) * | 2022-03-30 | 2023-11-28 | 广州华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
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| CN106206474B (en) | 2019-12-13 |
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Denomination of invention: A packaging structure and method for improving the mechanical strength of frit packaging Effective date of registration: 20201221 Granted publication date: 20191213 Pledgee: Xin Xin Finance Leasing Co.,Ltd. Pledgor: KunShan Go-Visionox Opto-Electronics Co.,Ltd. Registration number: Y2020980009652 |