CN106206231B - ion implantation device and monitoring method - Google Patents
ion implantation device and monitoring method Download PDFInfo
- Publication number
- CN106206231B CN106206231B CN201610608697.XA CN201610608697A CN106206231B CN 106206231 B CN106206231 B CN 106206231B CN 201610608697 A CN201610608697 A CN 201610608697A CN 106206231 B CN106206231 B CN 106206231B
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- monitoring
- semiconductor substrate
- plummer
- ground
- ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
Abstract
A kind of ion implantation device of present invention offer and its monitoring method, including：Process cavity and the plummer in process cavity, the plummer further include for placing monitoring semiconductor substrate：Electromagnetic field provides unit, is arranged in the both sides of plummer, for forming electromagnetic field in plummer both sides, the electromagnetic field is for the secondary electron in the filter ions beam in monitoring ion injection device；Ground unit, for being grounded monitoring semiconductor substrate in monitoring ion injection device；Electronic counter is electrically connected with the ground unit, the dosage for calculating the Doped ions in monitoring semiconductor substrate in monitoring ion injection device.The present invention solves when carrying out energetic ion injection monitoring using monitoring semiconductor substrate due to semiconductor substrate itself difference, annealing process is unstable, the external interferences such as unstable that measure board, further, it is possible to detect the dosage of actual Doped ions in detection semiconductor substrate.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of ion implantation device and monitoring method.
Background technology
With the continuous evolution of semiconductor technology node, the Doped ions accuracy of dose of ion implantation technology is required more next
It is higher, need dosage resolution ratio and the absolute precision of dosage to reach very high level.The control of the ion implantation device of mainstream at present
Method processed is to pass through closed loop farad using the closed loop faraday system for the plummer both sides or rear for being located at fixed semiconductor substrate
The implantation dosage of charge integration instrument control ion beam in control system.Although nominal standard dose and injection semiconductor in charge integration instrument
The dose proportional of Doped ions in substrate, but the losses of ions due to reflecting, sputtering in semiconductor substrate and ion beam
The factors such as middle secondary electron, the nominal standard dose that charge integration instrument provides can not truly reflect in semiconductor substrate completely to be adulterated
The actual dose of ion.
So this set closed loop faraday system for ion implantation device itself and the dosage control based on the system
Whether system is stablized, and those skilled in the art generally can carry out daily monitoring using square resistance method：I.e.：One monitoring is provided
Semiconductor substrate carries out ion implanting to the monitoring semiconductor substrate, is carried out after ion implantation to the monitoring semiconductor substrate
Then high annealing uses the square resistance measurement platform of four probe method to measure the square resistance of monitoring semiconductor substrate again, according to
Whether the square resistance of measurement, which is stablized, judges whether the actual implanted dose of board is accurate.
However, the defect that square resistance method has its own intrinsic：First, it is longer and easy by height to obtain the final result time
The interference of warm annealing process and square resistance measurement platform stability, second is that between the monitoring semiconductor substrate of different batches if
Raw resistivity, which has differences, can also influence to measure as a result, three be for energetic ion injection technology, because in monitoring semiconductor
The injection of substrate intermediate ion is relatively deep and makes monitoring semiconductor substrate surface Doped ions distribution few, utilizes existing Square resistance measurement
The monitoring semiconductor substrate that board is tested after energetic ion injection can be more than Square resistance measurement board because resistance is excessive
Measurement range.
Therefore, it is necessary to be improved to the prior art, to solve to carry out energetic ion injection using monitoring semiconductor substrate
When monitoring due to semiconductor substrate itself difference, annealing process is unstable, the external interferences such as unstable that measure board, also, answer
When the dosage that can measure actual Doped ions in monitoring semiconductor substrate.
Invention content
Problems solved by the invention is to propose a kind of ion implantation device and monitoring method, solves and is partly led using monitoring
When body substrate carries out energetic ion injection monitoring due to semiconductor substrate itself difference, annealing process is unstable, measures board not
The external interferences such as stable, also, the method for the present invention can measure the dosage of actual Doped ions in monitoring semiconductor substrate.
To solve the above-mentioned problems, the present invention provides a kind of ion implantation device, including：Process cavity and be located at process cavity
Internal plummer, the plummer further include for placing monitoring semiconductor substrate：
Electromagnetic field provides unit, is arranged in the both sides of plummer, for forming electromagnetic field, the electromagnetism in plummer both sides
Field is for the secondary electron in the filter ions beam in monitoring ion injection device；
Ground unit, for being grounded monitoring semiconductor substrate in monitoring ion injection device；
Electronic counter is electrically connected with the ground unit, is partly led for calculating monitoring in monitoring ion injection device
The dosage of Doped ions in body substrate.
Optionally, the ground unit is arranged between plummer and the monitoring semiconductor, and the ground unit can
Along carrier-table surface elevating movement, in monitoring ion injection device, the ground unit rises to and monitoring semiconductor substrate
It contacts and is grounded the monitoring semiconductor substrate.
Optionally, the ground unit is several ground pins or ground loop, and the ground pin or ground loop are uniformly arranged on
Between monitoring semiconductor substrate and the plummer.
Optionally, the ground unit is several ground pins, and the ground pin is uniformly arranged along the diametric(al) of plummer,
And the ground pin is uniformly arranged in the circumferencial direction of plummer.
Optionally, further include：The substrate clamping unit being set on the outside of plummer, the substrate clamping unit is used for will be partly
Conductor substrate is clamped and is fixed on plummer.
Optionally, the electromagnetic field provides unit and is passed through direct current when being monitored ion implantation device, is carrying out work
Direct current is closed when skill ion implanting.
Optionally, it is a pair of of electromagnet that the electromagnetic field, which provides unit, and direct current is passed through in the electromagnet.
Optionally, the electric current that direct current is passed through in the electromagnet is 0.5-5A, voltage 12-220V.
Correspondingly, the present invention also provides a kind of monitoring methods of ion implantation device, are supervised using monitoring semiconductor substrate
When control, electromagnetic field is formed in the both sides for the plummer for placing the monitoring semiconductor substrate, ion is eliminated using the electromagnetic field
Secondary electron in beam；
The monitoring semiconductor substrate is electrically connected with the electronic counter of ground connection, is calculated using the electronic technology device of ground connection
Monitor the dosage of the Doped ions in semiconductor substrate.
Optionally, the electromagnetic field utilizes direct current electric forming.
Compared with prior art, the invention has the advantages that；
Ion implantation device provided by the invention forms electromagnetic field in the plummer both sides for placing monitoring semiconductor substrate,
Using the electromagnetic field for the secondary electron in the filter ions beam in monitoring ion injection device, and utilize the electricity of ground connection
It is secondary to eliminate this due to filtering secondary electron for the dosage that sub-count device calculates the Doped ions in monitoring semiconductor substrate
The measurement of the dosage of electron adulterated ion, due to using ground connection electronic counter directly calculates monitor semiconductor substrate in adulterate from
The dosage of son, thus it is more accurate, it solves and is carried out when energetic ion injects monitoring using monitoring semiconductor substrate due to partly leading
The external interferences such as body substrate itself difference, annealing process are unstable, measurement board is unstable, partly lead further, it is possible to detect detection
The dosage of actual Doped ions in body substrate.
Description of the drawings
Fig. 1 is the structural schematic diagram of the ion implantation device of one embodiment of the invention；
Fig. 2 is the overlooking structure diagram of the plummer of ion implantation device described in Fig. 1.
Specific implementation mode
The prior art carries out the dosage of ion implantation device using monitoring semiconductor substrate, and is carried out to semiconductor substrate
Annealing measures square resistance to monitor the dosage of the Doped ions in semiconductor substrate, assists the dosage to ion implantation device
Monitoring system carries out auxiliary monitoring.But monitoring semiconductor substrate monitoring is used to be easy to be served as a contrast by external disturbance, such as semiconductor
The external interferences such as bottom itself difference, annealing process are unstable, measurement board is unstable.
To solve the above-mentioned problems, the present invention provides a kind of ion implantation device, including：Process cavity and be located at process cavity
Internal plummer, the plummer further include for placing monitoring semiconductor substrate：
Electromagnetic field provides unit, is arranged in the both sides of plummer, for forming electromagnetic field, the electromagnetism in plummer both sides
Field is for the secondary electron in the filter ions beam in monitoring ion injection device；
Ground unit, for being grounded monitoring semiconductor substrate in monitoring ion injection device；
Electronic counter is electrically connected with the ground unit, is partly led for calculating monitoring in monitoring ion injection device
The dosage of Doped ions in body substrate.
Technical scheme of the present invention is described in detail with reference to specific embodiment.In order to better illustrate the present invention
Technical solution, please refer to Fig.1 shown in one embodiment of the invention ion implantation device structural schematic diagram.
As shown in Figure 1, ion implantation device includes process cavity (not shown) and the plummer 1 in process cavity,
The plummer 1 is for placing monitoring semiconductor substrate 5；Electromagnetic field provides unit 3 and is arranged in the both sides of plummer 1, is used for
The both sides of plummer 1 form electromagnetic field, and the electromagnetic field in monitoring ion injection device for filtering off in deionization beam
Secondary electron.
The electromagnetic field provides unit 3 and is passed through direct current when being monitored ion implantation device, is carrying out technique ion
Direct current is closed when injection.As one embodiment, it is a pair of of electromagnet that the electromagnetic field, which provides unit, is led in the electromagnet
Enter direct current.As preferred embodiment, the electric current that direct current is passed through in the electromagnet is 0.5-5A, voltage 12-220V.
Under above-mentioned Current Voltage parameter area, the secondary electron in ion beam can be removed to greatest extent, it is secondary to exclude
Measurement of the electronics for the dosage of the Doped ions of monitoring semiconductor substrate.
As one embodiment, ground unit 2 is arranged between plummer 1 and the monitoring semiconductor 5, and the ground connection is single
Member 2 can be along 1 surface elevating movement of plummer, in monitoring ion injection device, and the ground unit 2 rises to and monitoring half
The monitoring semiconductor substrate 5 is simultaneously grounded by the rear-face contact of conductor substrate 5.The ground unit also with 6 phase of electronic counter
Connection, dosage of the electronic counter 6 for calculating the Doped ions in monitoring semiconductor substrate in monitoring ion injection device.
Since electronic technology device 6 directly measures the dosage of the Doped ions in semiconductor substrate, and the secondary electron quilt in ion beam
The dosage of the Doped ions for the semiconductor substrate for filtering, therefore being measured using electronic technology device 6 in advance is closer to actually adulterating
The actual value of the dosage of ion.
Monitoring semiconductor substrate 5 is grounded for 2 in monitoring ion injection device by the ground unit.It is of the present invention
Ground unit can be several ground pins or ground loop, and the ground pin or ground loop are uniformly arranged on the monitoring semiconductor lining
Between bottom and plummer.
With reference to figure 1 and Fig. 2 is combined, Fig. 2 is the overlooking structure diagram of the plummer of ion implantation device described in Fig. 1.Make
For preferred embodiment, the ground unit 2 is several ground pins, and the ground pin is uniformly arranged along the diametric(al) of plummer
Cloth, and the ground pin is uniformly arranged in the circumferencial direction of plummer.
Monitoring semiconductor substrate 5 is fixed by being set to the substrate clamping unit 4 on the outside of plummer., the substrate
Semiconductor substrate for being clamped and being fixed on plummer by clamping unit.
Correspondingly, the present invention also provides a kind of monitoring methods of ion implantation device, are supervised using monitoring semiconductor substrate
When control, electromagnetic field is formed in the both sides for the plummer for placing the monitoring semiconductor substrate, ion is eliminated using the electromagnetic field
Secondary electron in beam；
The monitoring semiconductor substrate is electrically connected with the electronic counter of ground connection, is calculated using the electronic technology device of ground connection
Monitor the dosage of the Doped ions in semiconductor substrate.Electromagnetic field of the present invention utilizes direct current electric forming.The direct current
Current range is 0.5-5A, voltage range 12-220V.
To sum up, ion implantation device provided by the invention forms electricity in the plummer both sides for placing monitoring semiconductor substrate
Magnetic field using the electromagnetic field for the secondary electron in the filter ions beam in monitoring ion injection device, and utilizes and connects
The dosage that the electronic counter on ground calculates the Doped ions in monitoring semiconductor substrate is eliminated due to filtering secondary electron
The measurement of the dosage of the secondary electron Doped ions, due to directly being calculated in monitoring semiconductor substrate using ground connection electronic counter
The dosage of Doped ions, thus more accurate, solve using monitoring semiconductor substrate carry out when energetic ion injection monitors by
In semiconductor substrate itself difference, annealing process is unstable, the external interferences such as unstable that measure board, further, it is possible to detect
Survey the dosage of actual Doped ions in semiconductor substrate.
Therefore, the technical concepts and features of above-mentioned preferred embodiment only to illustrate the invention, its object is to allow be familiar with this
The personage of item technology cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all
According to equivalent change or modification made by spirit of the invention, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of ion implantation device, including：Process cavity and the plummer in process cavity, the plummer is for putting
Set monitoring semiconductor substrate, which is characterized in that further include：
Electromagnetic field provides unit, is arranged in the both sides of plummer, for forming electromagnetic field in plummer both sides, the electromagnetic field is used
Secondary electron in the filter ions beam in monitoring ion injection device；
Ground unit, for being grounded monitoring semiconductor substrate in monitoring ion injection device；
Electronic counter is electrically connected with the ground unit, for calculating monitoring semiconductor lining in monitoring ion injection device
The dosage of Doped ions in bottom.
2. ion implantation device as described in claim 1, which is characterized in that ground unit setting plummer with it is described
Monitor semiconductor substrate between, the ground unit can along carrier-table surface elevating movement, in monitoring ion injection device,
The ground unit, which rises to, to be contacted with monitoring semiconductor substrate and is grounded the monitoring semiconductor substrate.
3. ion implantation device as claimed in claim 2, which is characterized in that the ground unit is several ground pins or ground connection
Ring, the ground pin or ground loop are uniformly arranged between monitoring semiconductor substrate and the plummer.
4. ion implantation device as claimed in claim 3, which is characterized in that the ground unit is several ground pins, described
Ground pin is uniformly arranged along the diametric(al) of plummer, and the ground pin is uniformly arranged in the circumferencial direction of plummer.
5. ion implantation device as claimed in claim 4, which is characterized in that further include：The substrate being set on the outside of plummer
Clamping unit, semiconductor substrate for being clamped and being fixed on plummer by the substrate clamping unit.
6. ion implantation device as described in claim 1, which is characterized in that the electromagnetic field provide unit be monitored from
It is passed through direct current when sub- injection device, direct current is closed when carrying out technique ion implanting.
7. ion implantation device as described in claim 1, which is characterized in that it is a pair of of electromagnetism that the electromagnetic field, which provides unit,
Iron is passed through direct current in the electromagnet.
8. ion implantation device as claimed in claim 3, which is characterized in that the electric current for being passed through direct current in the electromagnet is
0.5-5A, voltage 12-220V.
9. a kind of monitoring method of ion implantation device, which is characterized in that when being monitored using monitoring semiconductor substrate, placing
The both sides of the plummer of the monitoring semiconductor substrate form electromagnetic field, and secondary electricity in ion beam is eliminated using the electromagnetic field
Son；
The monitoring semiconductor substrate is electrically connected with the electronic counter of ground connection, monitoring is calculated using the electronic counter of ground connection
The dosage of Doped ions in semiconductor substrate.
10. the monitoring method of ion implantation device as claimed in claim 9, which is characterized in that the electromagnetic field utilizes direct current
Electric forming.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610608697.XA CN106206231B (en) | 2016-07-29 | 2016-07-29 | ion implantation device and monitoring method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610608697.XA CN106206231B (en) | 2016-07-29 | 2016-07-29 | ion implantation device and monitoring method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106206231A CN106206231A (en) | 2016-12-07 |
| CN106206231B true CN106206231B (en) | 2018-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610608697.XA Active CN106206231B (en) | 2016-07-29 | 2016-07-29 | ion implantation device and monitoring method |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110277345B (en) * | 2019-05-15 | 2021-11-19 | 福建省福联集成电路有限公司 | Sensor manufacturing method and sensor |
| CN111063600B (en) * | 2019-12-26 | 2022-10-28 | 华虹半导体(无锡)有限公司 | Device for monitoring ion implantation dosage in real time and using method |
| CN112259448B (en) * | 2020-10-14 | 2022-11-29 | 上海华力集成电路制造有限公司 | Ion implantation method after grid formation |
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|---|---|---|---|---|
| JP2002358921A (en) * | 2001-05-30 | 2002-12-13 | Matsushita Electric Ind Co Ltd | Ion doping equipment and control method of dosing amount to be used for same |
| CN1543667A (en) * | 2001-08-27 | 2004-11-03 | I | Method and system for single ion implantation |
| CN103021777A (en) * | 2012-12-10 | 2013-04-03 | 京东方科技集团股份有限公司 | Ion implantation method and device |
| CN103383913A (en) * | 2012-05-04 | 2013-11-06 | 台湾积体电路制造股份有限公司 | Ion beam dimension control for ion implantation process and apparatus, and advanced process control |
| CN203562390U (en) * | 2013-12-04 | 2014-04-23 | 杭州士兰集成电路有限公司 | Monitoring device for ion implanter and ion implanter system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7166854B2 (en) * | 2003-12-09 | 2007-01-23 | Varian Semiconductor Equipment Associates, Inc. | Uniformity control multiple tilt axes, rotating wafer and variable scan velocity |
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- 2016-07-29 CN CN201610608697.XA patent/CN106206231B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002358921A (en) * | 2001-05-30 | 2002-12-13 | Matsushita Electric Ind Co Ltd | Ion doping equipment and control method of dosing amount to be used for same |
| CN1543667A (en) * | 2001-08-27 | 2004-11-03 | I | Method and system for single ion implantation |
| CN103383913A (en) * | 2012-05-04 | 2013-11-06 | 台湾积体电路制造股份有限公司 | Ion beam dimension control for ion implantation process and apparatus, and advanced process control |
| CN103021777A (en) * | 2012-12-10 | 2013-04-03 | 京东方科技集团股份有限公司 | Ion implantation method and device |
| CN203562390U (en) * | 2013-12-04 | 2014-04-23 | 杭州士兰集成电路有限公司 | Monitoring device for ion implanter and ion implanter system |
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| CN106206231A (en) | 2016-12-07 |
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