CN106206022A - One realizes self energizing high efficiency parking lot Car license recognition equipment - Google Patents
One realizes self energizing high efficiency parking lot Car license recognition equipment Download PDFInfo
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- CN106206022A CN106206022A CN201610508583.8A CN201610508583A CN106206022A CN 106206022 A CN106206022 A CN 106206022A CN 201610508583 A CN201610508583 A CN 201610508583A CN 106206022 A CN106206022 A CN 106206022A
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- Prior art keywords
- conductive glass
- fto
- dye
- tungstic anhydride
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- 238000003860 storage Methods 0.000 claims abstract description 25
- 238000012545 processing Methods 0.000 claims abstract description 8
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 102
- 239000011521 glass Substances 0.000 claims description 99
- 239000000243 solution Substances 0.000 claims description 50
- 239000000975 dye Substances 0.000 claims description 47
- 239000003792 electrolyte Substances 0.000 claims description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 29
- 239000008367 deionised water Substances 0.000 claims description 26
- 229910021641 deionized water Inorganic materials 0.000 claims description 26
- 230000007704 transition Effects 0.000 claims description 24
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 22
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 21
- 238000002360 preparation method Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 238000003756 stirring Methods 0.000 claims description 15
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000003599 detergent Substances 0.000 claims description 14
- 229910052740 iodine Inorganic materials 0.000 claims description 14
- 239000011630 iodine Substances 0.000 claims description 14
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 claims description 14
- 239000011259 mixed solution Substances 0.000 claims description 14
- 238000007789 sealing Methods 0.000 claims description 14
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 claims description 14
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 14
- 238000013019 agitation Methods 0.000 claims description 13
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 13
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 13
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 claims description 12
- 206010070834 Sensitisation Diseases 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 230000008313 sensitization Effects 0.000 claims description 10
- 230000003197 catalytic effect Effects 0.000 claims description 9
- YSHMQTRICHYLGF-UHFFFAOYSA-N 4-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=NC=C1 YSHMQTRICHYLGF-UHFFFAOYSA-N 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 150000001450 anions Chemical class 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 7
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 7
- 239000000428 dust Substances 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 7
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- DPKBAXPHAYBPRL-UHFFFAOYSA-M tetrabutylazanium;iodide Chemical compound [I-].CCCC[N+](CCCC)(CCCC)CCCC DPKBAXPHAYBPRL-UHFFFAOYSA-M 0.000 claims description 7
- 238000002242 deionisation method Methods 0.000 claims 1
- 229960004756 ethanol Drugs 0.000 claims 1
- 238000001027 hydrothermal synthesis Methods 0.000 claims 1
- AGGKEGLBGGJEBZ-UHFFFAOYSA-N tetramethylenedisulfotetramine Chemical compound C1N(S2(=O)=O)CN3S(=O)(=O)N1CN2C3 AGGKEGLBGGJEBZ-UHFFFAOYSA-N 0.000 claims 1
- 238000012360 testing method Methods 0.000 description 25
- 239000010408 film Substances 0.000 description 21
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 12
- 230000005693 optoelectronics Effects 0.000 description 11
- 230000009466 transformation Effects 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 230000001476 alcoholic effect Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 235000010299 hexamethylene tetramine Nutrition 0.000 description 6
- 239000004312 hexamethylene tetramine Substances 0.000 description 6
- 239000003921 oil Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000002929 anti-fatigue Effects 0.000 description 5
- 238000009661 fatigue test Methods 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003471 mutagenic agent Substances 0.000 description 1
- 231100000707 mutagenic chemical Toxicity 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910000045 transition metal hydride Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2036—Light-sensitive devices comprising an oxide semiconductor electrode comprising mixed oxides, e.g. ZnO covered TiO2 particles
-
- G—PHYSICS
- G08—SIGNALLING
- G08G—TRAFFIC CONTROL SYSTEMS
- G08G1/00—Traffic control systems for road vehicles
- G08G1/01—Detecting movement of traffic to be counted or controlled
- G08G1/017—Detecting movement of traffic to be counted or controlled identifying vehicles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
Abstract
The application relates to one and realizes self energizing high efficiency parking lot Car license recognition equipment, including: harvester, electrical storage device and control device；Described control device includes Car license recognition unit and assembly processing unit, and described harvester is connected with electrical storage device and control device respectively；Described harvester is provided with camera body and base, and described camera body upper surface is also equipped with solar panel；Described solar panel electrically connects with described camera body, electrical storage device and control device, and described solar panel is based on dye-sensitized solar cells.
Description
Technical field
The application relates to Car license recognition field, particularly relates to one and realizes self energizing high efficiency parking lot Car license recognition and set
Standby.
Background technology
Continuing to optimize construction along with the development of auto manufacturing and road traffic, the vehicle number in city steeply rises,
Parking lot vehicle management becomes a great problem, utilizes Car license recognition equipment can well monitor parking lot periphery situation.
But, existing Car license recognition equipment exists and can not work alone, and relies on the problems such as electrical network electric energy.
Summary of the invention
For overcoming problem present in correlation technique, the application provides one to realize self energizing high efficiency parking lot car plate
Identification equipment.
The application is achieved through the following technical solutions:
One realizes self energizing high efficiency parking lot Car license recognition equipment, including: harvester, electrical storage device and control
Device；Described control device includes Car license recognition unit and assembly processing unit, described harvester respectively with electrical storage device and
Control device to connect.
Preferably, described harvester is provided with camera body and base, and described camera body upper surface is also equipped with
Solar panel；Described solar panel electrically connects with described camera body, electrical storage device and control device.
Preferably, described solar panel is based on dye-sensitized solar cells.
Preferably, described dye-sensitized solar cells is by light anode, constitute electrode and electrolyte；Described smooth anode is by outward
FTO substrate, transition zone, Tungstic anhydride. Seed Layer, Tungstic anhydride. three-dimensional grid nanostructured and dye molecule it is followed successively by and；Institute
Stating transition zone is Cr film transition zone；Described Tungstic anhydride. seed layer thickness is 150nm；Described Tungstic anhydride. three-dimensional grid nano junction
Structure uses hydro-thermal method to prepare.
Preferably, the preparation process of described dye-sensitized solar cells is as follows:
S1, prepares light anode
A) FTO substrate is cleaned: FTO conductive glass surface can exist greasy dirt, dust etc. and pollute, and first takes certain size
The FTO electro-conductive glass of (10cm × 10cm), puts into its conducting surface upward in liquid detergent solution, ultrasonic cleaning 30min, then uses
Deionized water rinses for several times repeatedly, until being cleaned up by liquid detergent, then, FTO electro-conductive glass is sequentially placed into acetone, second
In alcohol, deionized water, difference ultrasonic cleaning 20min, dries up stand-by by nitrogen gun；
B) transition zone is prepared: the one layer of Cr film of FTO conductive glass surface magnetron sputtering after cleaned, as Tungstic anhydride.
Three dimensional network structure and the transition zone of FTO electro-conductive glass, Cr film thickness is 50nm；
C) Tungstic anhydride. Seed Layer is prepared: take the sodium tungstate of 0.1mol, the diethanolamine of 0.06mol and the anhydrous second of 100ml
Alcoholic solution, puts it in beaker, in room temperature magnetic agitation 30min so that it is be sufficiently mixed, then beaker is put into 80 DEG C of oil baths
Middle magnetic agitation 6h, obtains seed solution；Take cleaned in step one after FTO electro-conductive glass, slowly entered seed molten
In liquid, standing 3min, the most slowly pull-out FTO electro-conductive glass, keeping pull-out speed is 0.05cm/s, subsequently by the FTO of pull-out
Electro-conductive glass is put in baking oven and is dried, and FTO electro-conductive glass is finally put into 300 DEG C of annealing 5h, wherein temperature-rise periods in Muffle furnace
Middle heating rate is 5 DEG C/min；
D) growth Tungstic anhydride. three-dimensional grid nanostructured: prepare and contain tungsten hexachloride, 30mmol sodium tungstate, 45mmol's
The deionized water mixed solution of hexamethylenetetramine and 200ml, is added dropwise over 5ml ammonia and stirs, transferring it to height
In pressure still inner bag；Take and be covered with the FTO electro-conductive glass of tungsten oxide Seed Layer and tilt to lean against in the solution of autoclave inner bag, conducting surface court
Lower placement, after sealing, puts in the baking oven being warmed up to 95 DEG C by autoclave, reacts 24h, is naturally down to room after reaction completely
Temperature, takes out FTO electro-conductive glass, uses deionized water rinsing 30s, obtains growing the light sun having Tungstic anhydride. three-dimensional grid nanostructured
Pole；
S2, preparation electrolyte and dyestuff:
Iodine/iodine three anion electrolyte that electrolyte application is traditional, first weighs the acetonitrile solution of 100ml, adds wherein
Enter the lithium iodide of 0.1M, 0.1M iodine, 0.6M 4-tert .-butylpyridine and the tetrabutylammonium iodide of 0.6M, the ultrasonic 5min of lucifuge,
It is made fully to dissolve；Then weigh the nano silver particles of 5g, be added in mixed solution, be sufficiently mixed；
Dye solution: weigh N719 powder 50mg, dehydrated alcohol 30ml, N719 is added in dehydrated alcohol, fully dissolve,
Lucifuge stirring 12h；
S3, encapsulation:
Take the dye solution of preparation in step S2 and put in brown glass ware, then growth is had Tungstic anhydride. three-dimensional grid
The light anode of nanostructured enters in this brown glass ware, and lucifuge is sensitization 3h at 60 DEG C, takes out, then will be with Pt Catalytic Layer
Same size FTO electro-conductive glass be packaged together with this light anode, encapsulating material use heat-sealing film, by electrolyte to electrode
The aperture of one end injects, and encapsulates aperture, connects wire, forms the modified model DSSC of the present invention.
The technical scheme that embodiments herein provides can include following beneficial effect:
1. the dye-sensitized solar cells in the application Car license recognition equipment, due in conventional dyes sensitization solar battery
Employing TiO2 nano-particle is as the carrier of dyestuff, though grain structure has big specific surface area, but due to grain boundary face
Existence, electronics transmits between particles will be through countless interfaces, and this weakens electronics transfer rate in transmitting procedure；This
In the DSSC of invention, light anode construction is direct growth Tungstic anhydride. three dimensional network on transparent conductive film
Lattice nanostructured, it has direct electron transfer pathways, and electronics can be collected on electrode along three-dimensional manometer grid, with
Time belong to semiconductor material with wide forbidden band due to tungsten trioxide nano material, there is high electric conductivity, therefore from structure and material side
Face all substantially increases the efficiency of transmission of electronics.
2. Tungstic anhydride. three-dimensional grid nanostructured has bigger specific surface area, it is possible to be greatly improved the absorption effect of dyestuff
Rate, dyestuff is optically excited generation electronics, and sufficient dye adsorption amount can produce photon in a large number, increases density of photocurrent, and then
The conversion efficiency of sunlight can be improved.
One layer of Cr metal, its conduct is added between FTO substrate and the tungsten oxide three-dimensional grid nanostructured of the most smooth anode
The transition zone of electronics conduction, it is to avoid contact resistance bigger between nanostructured and substrate, additionally, add in the electrolytic solution
Nano-Ag particles, nano-Ag particles contributes to sunlight scattering in the electrolytic solution, increases the probability that dyestuff absorbs, it is possible to carry
High electricity conversion.
4., in the modified model light anode construction of present invention design, Tungstic anhydride. three-dimensional grid nanostructured uses hydro-thermal legal system
Standby, this preparation method is simple, with low cost, has the potentiality of actual application on a large scale.
Aspect and advantage that the application adds will part be given in the following description, and part will become from the following description
Obtain substantially, or recognized by the practice of the application.It should be appreciated that above general description and details hereinafter only describe
It is exemplary and explanatory, the application can not be limited.
Accompanying drawing explanation
Accompanying drawing herein is merged in description and constitutes the part of this specification, it is shown that meet the enforcement of the present invention
Example, and for explaining the principle of the present invention together with description.
Fig. 1 is herein described Car license recognition device structure schematic diagram, wherein, 1-electrical storage device, and 2-controls device, and 3-takes the photograph
Camera body, 4-base, 5-solar panel.
Fig. 2 is the flow chart of the manufacture method of dye-sensitized solar cells described in the application Car license recognition equipment.
Detailed description of the invention
Here will illustrate exemplary embodiment in detail, its example represents in the accompanying drawings.Explained below relates to
During accompanying drawing, unless otherwise indicated, the same numbers in different accompanying drawings represents same or analogous key element.Following exemplary embodiment
Described in embodiment do not represent all embodiments consistent with the present invention.On the contrary, they are only with the most appended
The example of the apparatus and method that some aspects that described in detail in claims, the present invention are consistent.
Following disclosure provides many different embodiments or example for realizing the different structure of the application.For letter
Changing disclosure herein, hereinafter parts and setting to specific examples are described.Certainly, they are the most merely illustrative, and
It is not intended to limit the application.Additionally, the application can in different examples repeat reference numerals and/or letter.This heavy
It is for purposes of simplicity and clarity again, itself is more than the relation between various embodiment being discussed and/or arranging.This
Outward, the various specific technique that this application provides and the example of material, but those of ordinary skill in the art it can be appreciated that
The applicability of other techniques and/or the use of other materials.It addition, fisrt feature described below Second Eigenvalue " on "
Structure can include that the first and second features are formed as the embodiment directly contacted, it is also possible to include that other feature is formed at
Embodiment between first and second features, such first and second features are not likely to be directly contact.
In the description of the present application, it should be noted that unless otherwise prescribed and limit, term " is installed ", " being connected ",
" connect " and should be interpreted broadly, for example, it may be mechanically connected or electrical connection, it is also possible to be the connection of two element internals, can
Being to be joined directly together, it is also possible to be indirectly connected to by intermediary, for the ordinary skill in the art, can basis
Concrete condition understands the concrete meaning of above-mentioned term.
The energy is the material providing energy to convert to nature, is the material base of mankind's activity.Clean energy resource, also referred to as
Green energy resource, refers to those energy not discharged pollutants, includes water energy, wind energy, solar energy, bioenergy, nuclear energy, underground heat
Can etc., clean energy resource is environmentally friendly, and discharge is few, and pollution level is little.At present, the development and utilization of clean energy resource becomes
The appealing that world is consistent.
Solar energy clean energy resource is that the luminous energy of the sun is converted to the form such as heat energy, electric energy, will not in energy sources conversion
Produce other to pollute.Currently used most be silica-based solar, the efficiency of its opto-electronic conversion is higher, but, silicon purified
Journey can produce environmental pollution, the complex manufacturing technology of silica-based solar cell, expensive.
In the extended family of solaode, DSSC belongs to hybrid inorganic-organic battery, this type electricity
The pond electrolyte by light anode, to electrode and sandwich constitutes class sandwich structure；Wherein, light anode is usually by transparent electrical
The TiO2 nano thin-film on pole and surface thereof is constituted, and this TiO2 nano thin-film is adsorbed with dyestuff, and dyestuff is mainly used to absorb sunlight
Energy；Typically being made up of electrode the catalytic film on electrode and surface thereof, this catalytic film is generally Pt metal.The dye sensitization sun
Can have the advantages such as technology is simple, with low cost by battery.In the research to DSSC, the material of light anode
With structure, the conversion efficiency aspect improving photoelectricity is played a significant role.
Tungsten belongs to transition metal, and Tungstic anhydride. is the highest oxidation state of tungsten, fully meets stoichiometric proportion, three oxidations
Tungsten is a kind of typical wide bandgap semiconductor functional material, the sides such as it is in gas detecting, optical, electrical mutagens color, photocatalysis, electrochemistry
Mask has the performance of excellence.
Below in conjunction with embodiment, the present invention is described further.
Embodiment one:
By Fig. 1, embodiments herein relates to one and realizes self energizing high efficiency parking lot Car license recognition equipment, bag
Include: harvester, electrical storage device 1 and control device 2；Described control device 2 includes Car license recognition unit and assembly processing unit,
Described harvester is connected with electrical storage device 1 and control device 2 respectively.
Preferably, described harvester is provided with camera body 3 and base 4, and described camera body 3 upper surface is also installed
There is solar panel 5；Described solar panel 5 is electrically connected with described camera body 3, electrical storage device 1 and control device 2
Connect.
Preferably, described solar panel 5 is based on dye-sensitized solar cells.
Preferably, described dye-sensitized solar cells is by light anode, constitute electrode and electrolyte；Described smooth anode is by outward
FTO substrate, transition zone, Tungstic anhydride. Seed Layer, Tungstic anhydride. three-dimensional grid nanostructured and dye molecule it is followed successively by and；Institute
Stating transition zone is Cr film transition zone；Described Tungstic anhydride. seed layer thickness is 150nm；Described Tungstic anhydride. three-dimensional grid nano junction
Structure uses hydro-thermal method to prepare.
Preferably, in conjunction with Fig. 2, the preparation process of described dye-sensitized solar cells is as follows:
S1, prepares light anode
A) FTO substrate is cleaned: FTO conductive glass surface can exist greasy dirt, dust etc. and pollute, and first takes certain size
The FTO electro-conductive glass of (10cm × 10cm), puts into its conducting surface upward in liquid detergent solution, ultrasonic cleaning 30min, then uses
Deionized water rinses for several times repeatedly, until being cleaned up by liquid detergent, then, FTO electro-conductive glass is sequentially placed into acetone, second
In alcohol, deionized water, difference ultrasonic cleaning 20min, dries up stand-by by nitrogen gun；
B) transition zone is prepared: the one layer of Cr film of FTO conductive glass surface magnetron sputtering after cleaned, as Tungstic anhydride.
Three dimensional network structure and the transition zone of FTO electro-conductive glass, Cr film thickness is 50nm；
C) Tungstic anhydride. Seed Layer is prepared: take the sodium tungstate of 0.1mol, the diethanolamine of 0.06mol and the anhydrous second of 100ml
Alcoholic solution, puts it in beaker, in room temperature magnetic agitation 30min so that it is be sufficiently mixed, then beaker is put into 80 DEG C of oil baths
Middle magnetic agitation 6h, obtains seed solution；Take cleaned in step one after FTO electro-conductive glass, slowly entered seed molten
In liquid, standing 3min, the most slowly pull-out FTO electro-conductive glass, keeping pull-out speed is 0.05cm/s, subsequently by the FTO of pull-out
Electro-conductive glass is put in baking oven and is dried, and FTO electro-conductive glass is finally put into 300 DEG C of annealing 5h, wherein temperature-rise periods in Muffle furnace
Middle heating rate is 5 DEG C/min；
D) growth Tungstic anhydride. three-dimensional grid nanostructured: prepare and contain tungsten hexachloride, 30mmol sodium tungstate, 45mmol's
The deionized water mixed solution of hexamethylenetetramine and 200ml, is added dropwise over 5ml ammonia and stirs, transferring it to height
In pressure still inner bag；Take and be covered with the FTO electro-conductive glass of tungsten oxide Seed Layer and tilt to lean against in the solution of autoclave inner bag, conducting surface court
Lower placement, after sealing, puts in the baking oven being warmed up to 95 DEG C by autoclave, reacts 24h, is naturally down to room after reaction completely
Temperature, takes out FTO electro-conductive glass, uses deionized water rinsing 30s, obtains growing the light sun having Tungstic anhydride. three-dimensional grid nanostructured
Pole；
S2, preparation electrolyte and dyestuff:
Iodine/iodine three anion electrolyte that electrolyte application is traditional, first weighs the acetonitrile solution of 100ml, adds wherein
Enter the lithium iodide of 0.1M, 0.1M iodine, 0.6M 4-tert .-butylpyridine and the tetrabutylammonium iodide of 0.6M, the ultrasonic 5min of lucifuge,
It is made fully to dissolve；Then weigh the nano silver particles of 5g, be added in mixed solution, be sufficiently mixed；
Dye solution: weigh N719 powder 50mg, dehydrated alcohol 30ml, N719 is added in dehydrated alcohol, fully dissolve,
Lucifuge stirring 12h；
S3, encapsulation:
Take the dye solution of preparation in step S2 and put in brown glass ware, then growth is had Tungstic anhydride. three-dimensional grid
The light anode of nanostructured enters in this brown glass ware, and lucifuge is sensitization 3h at 60 DEG C, takes out, then will be with Pt Catalytic Layer
Same size FTO electro-conductive glass be packaged together with this light anode, encapsulating material use heat-sealing film, by electrolyte to electrode
The aperture of one end injects, and encapsulates aperture, connects wire, forms the modified model DSSC of the present invention.
Preferably, in described dye-sensitized solar cells, through Hydrothermal Growth, in FTO substrate, grow one layer of three oxygen
Changing tungsten network, when wherein tungsten hexachloride content is 60mmol, nanometer web thickness is 6 μm.Tungsten oxide nanometer three dimensional structure
In hollow network-like, wherein, a diameter of 40nm of network, hiding a large amount of dye molecule can be adsorbed in centre, dye adsorption
Amount is 0.189 × 10-6mol/cm2.
Dye cell structure of the present invention is carried out opto-electronic conversion test, and test condition is AM1.5 optical power density 100mW/
Cm2, test finds, short circuit current is 15.4mA/cm2, and open-circuit voltage is 0.6V, and photoelectric transformation efficiency reaches 9.4%.Resisting fatigue
Test, in the case of follow-on test 1000h, photoelectric transformation efficiency compares and have dropped 3.1%, better working stability.
By test, the parking lot of the present invention identifies equipment, and preparation process is simple, and anti-fatigue ability is strong, and opto-electronic conversion is imitated
Rate is higher, possesses certain actual application potential.
Embodiment two:
By Fig. 1, embodiments herein relates to one and realizes self energizing high efficiency parking lot Car license recognition equipment, bag
Include: harvester, electrical storage device 1 and control device 2；Described control device 2 includes Car license recognition unit and assembly processing unit,
Described harvester is connected with electrical storage device 1 and control device 2 respectively.
Preferably, described harvester is provided with camera body 3 and base 4, and described camera body 3 upper surface is also installed
There is solar panel 5；Described solar panel 5 is electrically connected with described camera body 3, electrical storage device 1 and control device 2
Connect.
Preferably, described solar panel 5 is based on dye-sensitized solar cells.
Preferably, described dye-sensitized solar cells is by light anode, constitute electrode and electrolyte；Described smooth anode is by outward
FTO substrate, transition zone, Tungstic anhydride. Seed Layer, Tungstic anhydride. three-dimensional grid nanostructured and dye molecule it is followed successively by and；Institute
Stating transition zone is Cr film transition zone；Described Tungstic anhydride. seed layer thickness is 150nm；Described Tungstic anhydride. three-dimensional grid nano junction
Structure uses hydro-thermal method to prepare.
Preferably, in conjunction with Fig. 2, the preparation process of described dye-sensitized solar cells is as follows:
S1, prepares light anode
A) FTO substrate is cleaned: FTO conductive glass surface can exist greasy dirt, dust etc. and pollute, and first takes certain size
The FTO electro-conductive glass of (10cm × 10cm), puts into its conducting surface upward in liquid detergent solution, ultrasonic cleaning 30min, then uses
Deionized water rinses for several times repeatedly, until being cleaned up by liquid detergent, then, FTO electro-conductive glass is sequentially placed into acetone, second
In alcohol, deionized water, difference ultrasonic cleaning 20min, dries up stand-by by nitrogen gun；
B) transition zone is prepared: the one layer of Cr film of FTO conductive glass surface magnetron sputtering after cleaned, as Tungstic anhydride.
Three dimensional network structure and the transition zone of FTO electro-conductive glass, Cr film thickness is 50nm；
C) Tungstic anhydride. Seed Layer is prepared: take the sodium tungstate of 0.1mol, the diethanolamine of 0.06mol and the anhydrous second of 100ml
Alcoholic solution, puts it in beaker, in room temperature magnetic agitation 30min so that it is be sufficiently mixed, then beaker is put into 80 DEG C of oil baths
Middle magnetic agitation 6h, obtains seed solution；Take cleaned in step one after FTO electro-conductive glass, slowly entered seed molten
In liquid, standing 3min, the most slowly pull-out FTO electro-conductive glass, keeping pull-out speed is 0.05cm/s, subsequently by the FTO of pull-out
Electro-conductive glass is put in baking oven and is dried, and FTO electro-conductive glass is finally put into 300 DEG C of annealing 5h, wherein temperature-rise periods in Muffle furnace
Middle heating rate is 5 DEG C/min；
D) growth Tungstic anhydride. three-dimensional grid nanostructured: prepare and contain tungsten hexachloride, 30mmol sodium tungstate, 45mmol's
The deionized water mixed solution of hexamethylenetetramine and 200ml, is added dropwise over 5ml ammonia and stirs, transferring it to height
In pressure still inner bag；Take and be covered with the FTO electro-conductive glass of tungsten oxide Seed Layer and tilt to lean against in the solution of autoclave inner bag, conducting surface court
Lower placement, after sealing, puts in the baking oven being warmed up to 95 DEG C by autoclave, reacts 24h, is naturally down to room after reaction completely
Temperature, takes out FTO electro-conductive glass, uses deionized water rinsing 30s, obtains growing the light sun having Tungstic anhydride. three-dimensional grid nanostructured
Pole；
S2, preparation electrolyte and dyestuff:
Iodine/iodine three anion electrolyte that electrolyte application is traditional, first weighs the acetonitrile solution of 100ml, adds wherein
Enter the lithium iodide of 0.1M, 0.1M iodine, 0.6M 4-tert .-butylpyridine and the tetrabutylammonium iodide of 0.6M, the ultrasonic 5min of lucifuge,
It is made fully to dissolve；Then weigh the nano silver particles of 5g, be added in mixed solution, be sufficiently mixed；
Dye solution: weigh N719 powder 50mg, dehydrated alcohol 30ml, N719 is added in dehydrated alcohol, fully dissolve,
Lucifuge stirring 12h；
S3, encapsulation:
Take the dye solution of preparation in step S2 and put in brown glass ware, then growth is had Tungstic anhydride. three-dimensional grid
The light anode of nanostructured enters in this brown glass ware, and lucifuge is sensitization 3h at 60 DEG C, takes out, then will be with Pt Catalytic Layer
Same size FTO electro-conductive glass be packaged together with this light anode, encapsulating material use heat-sealing film, by electrolyte to electrode
The aperture of one end injects, and encapsulates aperture, connects wire, forms the modified model DSSC of the present invention.
Preferably, in described dye-sensitized solar cells, through Hydrothermal Growth, in FTO substrate, grow one layer of three oxygen
Changing tungsten network, when wherein tungsten hexachloride content is 50mmol, nanometer web thickness is 5 μm.Tungsten oxide nanometer three dimensional structure
In hollow network-like, wherein, a diameter of 40nm of network, hiding a large amount of dye molecule can be adsorbed in centre, dye adsorption
Amount is 0.189 × 10-6mol/cm2.
Dye cell structure of the present invention is carried out opto-electronic conversion test, and test condition is AM1.5 optical power density 100mW/
Cm2, test finds, short circuit current is 15.4mA/cm2, and open-circuit voltage is 0.6V, and photoelectric transformation efficiency reaches 8.3%.Resisting fatigue
Test, in the case of follow-on test 1000h, photoelectric transformation efficiency compares and have dropped 3.5%, better working stability.
By test, the parking lot of the present invention identifies equipment, and preparation process is simple, and anti-fatigue ability is strong, and opto-electronic conversion is imitated
Rate is higher, possesses certain actual application potential.
Embodiment three:
By Fig. 1, embodiments herein relates to one and realizes self energizing high efficiency parking lot Car license recognition equipment, bag
Include: harvester, electrical storage device 1 and control device 2；Described control device 2 includes Car license recognition unit and assembly processing unit,
Described harvester is connected with electrical storage device 1 and control device 2 respectively.
Preferably, described harvester is provided with camera body 3 and base 4, and described camera body 3 upper surface is also installed
There is solar panel 5；Described solar panel 5 is electrically connected with described camera body 3, electrical storage device 1 and control device 2
Connect.
Preferably, described solar panel 5 is based on dye-sensitized solar cells.
Preferably, described dye-sensitized solar cells is by light anode, constitute electrode and electrolyte；Described smooth anode is by outward
FTO substrate, transition zone, Tungstic anhydride. Seed Layer, Tungstic anhydride. three-dimensional grid nanostructured and dye molecule it is followed successively by and；Institute
Stating transition zone is Cr film transition zone；Described Tungstic anhydride. seed layer thickness is 150nm；Described Tungstic anhydride. three-dimensional grid nano junction
Structure uses hydro-thermal method to prepare.
Preferably, in conjunction with Fig. 2, the preparation process of described dye-sensitized solar cells is as follows:
S1, prepares light anode
A) FTO substrate is cleaned: FTO conductive glass surface can exist greasy dirt, dust etc. and pollute, and first takes certain size
The FTO electro-conductive glass of (10cm × 10cm), puts into its conducting surface upward in liquid detergent solution, ultrasonic cleaning 30min, then uses
Deionized water rinses for several times repeatedly, until being cleaned up by liquid detergent, then, FTO electro-conductive glass is sequentially placed into acetone, second
In alcohol, deionized water, difference ultrasonic cleaning 20min, dries up stand-by by nitrogen gun；
B) transition zone is prepared: the one layer of Cr film of FTO conductive glass surface magnetron sputtering after cleaned, as Tungstic anhydride.
Three dimensional network structure and the transition zone of FTO electro-conductive glass, Cr film thickness is 50nm；
C) Tungstic anhydride. Seed Layer is prepared: take the sodium tungstate of 0.1mol, the diethanolamine of 0.06mol and the anhydrous second of 100ml
Alcoholic solution, puts it in beaker, in room temperature magnetic agitation 30min so that it is be sufficiently mixed, then beaker is put into 80 DEG C of oil baths
Middle magnetic agitation 6h, obtains seed solution；Take cleaned in step one after FTO electro-conductive glass, slowly entered seed molten
In liquid, standing 3min, the most slowly pull-out FTO electro-conductive glass, keeping pull-out speed is 0.05cm/s, subsequently by the FTO of pull-out
Electro-conductive glass is put in baking oven and is dried, and FTO electro-conductive glass is finally put into 300 DEG C of annealing 5h, wherein temperature-rise periods in Muffle furnace
Middle heating rate is 5 DEG C/min；
D) growth Tungstic anhydride. three-dimensional grid nanostructured: prepare and contain tungsten hexachloride, 30mmol sodium tungstate, 45mmol's
The deionized water mixed solution of hexamethylenetetramine and 200ml, is added dropwise over 5ml ammonia and stirs, transferring it to height
In pressure still inner bag；Take and be covered with the FTO electro-conductive glass of tungsten oxide Seed Layer and tilt to lean against in the solution of autoclave inner bag, conducting surface court
Lower placement, after sealing, puts in the baking oven being warmed up to 95 DEG C by autoclave, reacts 24h, is naturally down to room after reaction completely
Temperature, takes out FTO electro-conductive glass, uses deionized water rinsing 30s, obtains growing the light sun having Tungstic anhydride. three-dimensional grid nanostructured
Pole；
S2, preparation electrolyte and dyestuff:
Iodine/iodine three anion electrolyte that electrolyte application is traditional, first weighs the acetonitrile solution of 100ml, adds wherein
Enter the lithium iodide of 0.1M, 0.1M iodine, 0.6M 4-tert .-butylpyridine and the tetrabutylammonium iodide of 0.6M, the ultrasonic 5min of lucifuge,
It is made fully to dissolve；Then weigh the nano silver particles of 5g, be added in mixed solution, be sufficiently mixed；
Dye solution: weigh N719 powder 50mg, dehydrated alcohol 30ml, N719 is added in dehydrated alcohol, fully dissolve,
Lucifuge stirring 12h；
S3, encapsulation:
Take the dye solution of preparation in step S2 and put in brown glass ware, then growth is had Tungstic anhydride. three-dimensional grid
The light anode of nanostructured enters in this brown glass ware, and lucifuge is sensitization 3h at 60 DEG C, takes out, then will be with Pt Catalytic Layer
Same size FTO electro-conductive glass be packaged together with this light anode, encapsulating material use heat-sealing film, by electrolyte to electrode
The aperture of one end injects, and encapsulates aperture, connects wire, forms the modified model DSSC of the present invention.
Preferably, in described dye-sensitized solar cells, through Hydrothermal Growth, in FTO substrate, grow one layer of three oxygen
Changing tungsten network, when wherein tungsten hexachloride content is 70mmol, nanometer web thickness is 7 μm.Tungsten oxide nanometer three dimensional structure
In hollow network-like, wherein, a diameter of 40nm of network, hiding a large amount of dye molecule can be adsorbed in centre, dye adsorption
Amount is 0.189 × 10-6mol/cm2.
Dye cell structure of the present invention is carried out opto-electronic conversion test, and test condition is AM1.5 optical power density 100mW/
Cm2, test finds, short circuit current is 15.4mA/cm2, and open-circuit voltage is 0.6V, and photoelectric transformation efficiency reaches 7.8%.Resisting fatigue
Test, in the case of follow-on test 1000h, photoelectric transformation efficiency compares and have dropped 5.1%, better working stability.
By test, the parking lot of the present invention identifies equipment, and preparation process is simple, and anti-fatigue ability is strong, and opto-electronic conversion is imitated
Rate is higher, possesses certain actual application potential.
Embodiment four:
By Fig. 1, embodiments herein relates to one and realizes self energizing high efficiency parking lot Car license recognition equipment, bag
Include: harvester, electrical storage device 1 and control device 2；Described control device 2 includes Car license recognition unit and assembly processing unit,
Described harvester is connected with electrical storage device 1 and control device 2 respectively.
Preferably, described harvester is provided with camera body 3 and base 4, and described camera body 3 upper surface is also installed
There is solar panel 5；Described solar panel 5 is electrically connected with described camera body 3, electrical storage device 1 and control device 2
Connect.
Preferably, described solar panel 5 is based on dye-sensitized solar cells.
Preferably, described dye-sensitized solar cells is by light anode, constitute electrode and electrolyte；Described smooth anode is by outward
FTO substrate, transition zone, Tungstic anhydride. Seed Layer, Tungstic anhydride. three-dimensional grid nanostructured and dye molecule it is followed successively by and；Institute
Stating transition zone is Cr film transition zone；Described Tungstic anhydride. seed layer thickness is 150nm；Described Tungstic anhydride. three-dimensional grid nano junction
Structure uses hydro-thermal method to prepare.
Preferably, in conjunction with Fig. 2, the preparation process of described dye-sensitized solar cells is as follows:
S1, prepares light anode
A) FTO substrate is cleaned: FTO conductive glass surface can exist greasy dirt, dust etc. and pollute, and first takes certain size
The FTO electro-conductive glass of (10cm × 10cm), puts into its conducting surface upward in liquid detergent solution, ultrasonic cleaning 30min, then uses
Deionized water rinses for several times repeatedly, until being cleaned up by liquid detergent, then, FTO electro-conductive glass is sequentially placed into acetone, second
In alcohol, deionized water, difference ultrasonic cleaning 20min, dries up stand-by by nitrogen gun；
B) transition zone is prepared: the one layer of Cr film of FTO conductive glass surface magnetron sputtering after cleaned, as Tungstic anhydride.
Three dimensional network structure and the transition zone of FTO electro-conductive glass, Cr film thickness is 50nm；
C) Tungstic anhydride. Seed Layer is prepared: take the sodium tungstate of 0.1mol, the diethanolamine of 0.06mol and the anhydrous second of 100ml
Alcoholic solution, puts it in beaker, in room temperature magnetic agitation 30min so that it is be sufficiently mixed, then beaker is put into 80 DEG C of oil baths
Middle magnetic agitation 6h, obtains seed solution；Take cleaned in step one after FTO electro-conductive glass, slowly entered seed molten
In liquid, standing 3min, the most slowly pull-out FTO electro-conductive glass, keeping pull-out speed is 0.05cm/s, subsequently by the FTO of pull-out
Electro-conductive glass is put in baking oven and is dried, and FTO electro-conductive glass is finally put into 300 DEG C of annealing 5h, wherein temperature-rise periods in Muffle furnace
Middle heating rate is 5 DEG C/min；
D) growth Tungstic anhydride. three-dimensional grid nanostructured: prepare and contain tungsten hexachloride, 30mmol sodium tungstate, 45mmol's
The deionized water mixed solution of hexamethylenetetramine and 200ml, is added dropwise over 5ml ammonia and stirs, transferring it to height
In pressure still inner bag；Take and be covered with the FTO electro-conductive glass of tungsten oxide Seed Layer and tilt to lean against in the solution of autoclave inner bag, conducting surface court
Lower placement, after sealing, puts in the baking oven being warmed up to 95 DEG C by autoclave, reacts 24h, is naturally down to room after reaction completely
Temperature, takes out FTO electro-conductive glass, uses deionized water rinsing 30s, obtains growing the light sun having Tungstic anhydride. three-dimensional grid nanostructured
Pole；
S2, preparation electrolyte and dyestuff:
Iodine/iodine three anion electrolyte that electrolyte application is traditional, first weighs the acetonitrile solution of 100ml, adds wherein
Enter the lithium iodide of 0.1M, 0.1M iodine, 0.6M 4-tert .-butylpyridine and the tetrabutylammonium iodide of 0.6M, the ultrasonic 5min of lucifuge,
It is made fully to dissolve；Then weigh the nano silver particles of 5g, be added in mixed solution, be sufficiently mixed；
Dye solution: weigh N719 powder 50mg, dehydrated alcohol 30ml, N719 is added in dehydrated alcohol, fully dissolve,
Lucifuge stirring 12h；
S3, encapsulation:
Take the dye solution of preparation in step S2 and put in brown glass ware, then growth is had Tungstic anhydride. three-dimensional grid
The light anode of nanostructured enters in this brown glass ware, and lucifuge is sensitization 3h at 60 DEG C, takes out, then will be with Pt Catalytic Layer
Same size FTO electro-conductive glass be packaged together with this light anode, encapsulating material use heat-sealing film, by electrolyte to electrode
The aperture of one end injects, and encapsulates aperture, connects wire, forms the modified model DSSC of the present invention.
Preferably, in described dye-sensitized solar cells,
Through Hydrothermal Growth, in FTO substrate, grow one layer of Tungstic anhydride. network, wherein tungsten hexachloride content
During for 90mmol, nanometer web thickness is 10 μm.Tungsten oxide nanometer three dimensional structure is hollow network-like, wherein, and network
A diameter of 40nm, centre can adsorb hiding a large amount of dye molecule, and dye adsorption amount is 0.189 × 10-6mol/cm2.
Dye cell structure of the present invention is carried out opto-electronic conversion test, and test condition is AM1.5 optical power density 100mW/
Cm2, test finds, short circuit current is 15.4mA/cm2, and open-circuit voltage is 0.6V, and photoelectric transformation efficiency reaches 7.3%.Resisting fatigue
Test, in the case of follow-on test 1000h, photoelectric transformation efficiency compares and have dropped 3.1%, better working stability.
By test, the parking lot of the present invention identifies equipment, and preparation process is simple, and anti-fatigue ability is strong, and opto-electronic conversion is imitated
Rate is higher, possesses certain actual application potential.
Embodiment five:
By Fig. 1, embodiments herein relates to one and realizes self energizing high efficiency parking lot Car license recognition equipment, bag
Include: harvester, electrical storage device 1 and control device 2；Described control device 2 includes Car license recognition unit and assembly processing unit,
Described harvester is connected with electrical storage device 1 and control device 2 respectively.
Preferably, described harvester is provided with camera body 3 and base 4, and described camera body 3 upper surface is also installed
There is solar panel 5；Described solar panel 5 is electrically connected with described camera body 3, electrical storage device 1 and control device 2
Connect.
Preferably, described solar panel 5 is based on dye-sensitized solar cells.
Preferably, described dye-sensitized solar cells is by light anode, constitute electrode and electrolyte；Described smooth anode is by outward
FTO substrate, transition zone, Tungstic anhydride. Seed Layer, Tungstic anhydride. three-dimensional grid nanostructured and dye molecule it is followed successively by and；Institute
Stating transition zone is Cr film transition zone；Described Tungstic anhydride. seed layer thickness is 150nm；Described Tungstic anhydride. three-dimensional grid nano junction
Structure uses hydro-thermal method to prepare.
Preferably, in conjunction with Fig. 2, the preparation process of described dye-sensitized solar cells is as follows:
S1, prepares light anode
A) FTO substrate is cleaned: FTO conductive glass surface can exist greasy dirt, dust etc. and pollute, and first takes certain size
The FTO electro-conductive glass of (10cm × 10cm), puts into its conducting surface upward in liquid detergent solution, ultrasonic cleaning 30min, then uses
Deionized water rinses for several times repeatedly, until being cleaned up by liquid detergent, then, FTO electro-conductive glass is sequentially placed into acetone, second
In alcohol, deionized water, difference ultrasonic cleaning 20min, dries up stand-by by nitrogen gun；
B) transition zone is prepared: the one layer of Cr film of FTO conductive glass surface magnetron sputtering after cleaned, as Tungstic anhydride.
Three dimensional network structure and the transition zone of FTO electro-conductive glass, Cr film thickness is 50nm；
C) Tungstic anhydride. Seed Layer is prepared: take the sodium tungstate of 0.1mol, the diethanolamine of 0.06mol and the anhydrous second of 100ml
Alcoholic solution, puts it in beaker, in room temperature magnetic agitation 30min so that it is be sufficiently mixed, then beaker is put into 80 DEG C of oil baths
Middle magnetic agitation 6h, obtains seed solution；Take cleaned in step one after FTO electro-conductive glass, slowly entered seed molten
In liquid, standing 3min, the most slowly pull-out FTO electro-conductive glass, keeping pull-out speed is 0.05cm/s, subsequently by the FTO of pull-out
Electro-conductive glass is put in baking oven and is dried, and FTO electro-conductive glass is finally put into 300 DEG C of annealing 5h, wherein temperature-rise periods in Muffle furnace
Middle heating rate is 5 DEG C/min；
D) growth Tungstic anhydride. three-dimensional grid nanostructured: prepare and contain tungsten hexachloride, 30mmol sodium tungstate, 45mmol's
The deionized water mixed solution of hexamethylenetetramine and 200ml, is added dropwise over 5ml ammonia and stirs, transferring it to height
In pressure still inner bag；Take and be covered with the FTO electro-conductive glass of tungsten oxide Seed Layer and tilt to lean against in the solution of autoclave inner bag, conducting surface court
Lower placement, after sealing, puts in the baking oven being warmed up to 95 DEG C by autoclave, reacts 24h, is naturally down to room after reaction completely
Temperature, takes out FTO electro-conductive glass, uses deionized water rinsing 30s, obtains growing the light sun having Tungstic anhydride. three-dimensional grid nanostructured
Pole；
S2, preparation electrolyte and dyestuff:
Iodine/iodine three anion electrolyte that electrolyte application is traditional, first weighs the acetonitrile solution of 100ml, adds wherein
Enter the lithium iodide of 0.1M, 0.1M iodine, 0.6M 4-tert .-butylpyridine and the tetrabutylammonium iodide of 0.6M, the ultrasonic 5min of lucifuge,
It is made fully to dissolve；Then weigh the nano silver particles of 5g, be added in mixed solution, be sufficiently mixed；
Dye solution: weigh N719 powder 50mg, dehydrated alcohol 30ml, N719 is added in dehydrated alcohol, fully dissolve,
Lucifuge stirring 12h；
S3, encapsulation:
Take the dye solution of preparation in step S2 and put in brown glass ware, then growth is had Tungstic anhydride. three-dimensional grid
The light anode of nanostructured enters in this brown glass ware, and lucifuge is sensitization 3h at 60 DEG C, takes out, then will be with Pt Catalytic Layer
Same size FTO electro-conductive glass be packaged together with this light anode, encapsulating material use heat-sealing film, by electrolyte to electrode
The aperture of one end injects, and encapsulates aperture, connects wire, forms the modified model DSSC of the present invention.
Preferably, in described dye-sensitized solar cells, through Hydrothermal Growth, in FTO substrate, grow one layer of three oxygen
Changing tungsten network, when wherein tungsten hexachloride content is 120mmol, nanometer web thickness is 15 μm.Tungsten oxide nanometer three-dimensional is tied
Structure is hollow network-like, and wherein, a diameter of 40nm of network, hiding a large amount of dye molecule, dyestuff suction can be adsorbed in centre
Attached amount is 0.189 × 10-6mol/cm2.
Dye cell structure of the present invention is carried out opto-electronic conversion test, and test condition is AM1.5 optical power density 100mW/
Cm2, test finds, short circuit current is 15.4mA/cm2, and open-circuit voltage is 0.6V, and photoelectric transformation efficiency reaches 6.5%.Resisting fatigue
Test, in the case of follow-on test 1000h, photoelectric transformation efficiency compares and have dropped 3.1%, better working stability.
By test, the parking lot of the present invention identifies equipment, and preparation process is simple, and anti-fatigue ability is strong, and opto-electronic conversion is imitated
Rate is higher, possesses certain actual application potential.
Those skilled in the art, after considering description and putting into practice invention disclosed herein, will readily occur to its of the present invention
Its embodiment.The application is intended to any modification, purposes or the adaptations of the present invention, these modification, purposes or
Person's adaptations is followed the general principle of the present invention and includes the undocumented common knowledge in the art of the application
Or conventional techniques means.Description and embodiments is considered only as exemplary, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be appreciated that the invention is not limited in precision architecture described above and illustrated in the accompanying drawings, and
And various modifications and changes can carried out without departing from the scope.The scope of the present invention is only limited by appended claim.
Claims (5)
1. one kind realizes self energizing high efficiency parking lot Car license recognition equipment, it is characterised in that including: harvester, electric power storage
Device and control device；Described control device includes Car license recognition unit and assembly processing unit, described harvester respectively with
Electrical storage device and control device connect.
Harvester the most according to claim 1, it is characterised in that described harvester is provided with camera body and the end
Seat, described camera body upper surface is also equipped with solar panel；Described solar panel and described camera body,
Electrical storage device and control device electrical connection.
Solar panel the most according to claim 2, it is characterised in that described solar panel is based on dye sensitization
Solar cell.
Dye-sensitized solar cells the most according to claim 3, it is characterised in that described dye-sensitized solar cells is by light
Anode, electrode and electrolyte are constituted；Described smooth anode is followed successively by FTO substrate, transition zone, Tungstic anhydride. seed from outside to inside
Layer, Tungstic anhydride. three-dimensional grid nanostructured and dye molecule；Described transition zone is Cr film transition zone；Described Tungstic anhydride. seed
Layer thickness is 150nm；Described Tungstic anhydride. three-dimensional grid nanostructured uses hydro-thermal method to prepare.
Dye-sensitized solar cells the most according to claim 4, it is characterised in that the system of described dye-sensitized solar cells
Standby process is as follows:
S1, prepares light anode
A) clean FTO substrate: FTO conductive glass surface can exist greasy dirt, dust etc. pollute, first take certain size (10cm ×
FTO electro-conductive glass 10cm), puts into its conducting surface upward in liquid detergent solution, ultrasonic cleaning 30min, then uses deionization
Water rinses for several times repeatedly, until liquid detergent is cleaned up, then, FTO electro-conductive glass is sequentially placed into acetone, ethanol, go from
In sub-water, difference ultrasonic cleaning 20min, dries up stand-by by nitrogen gun；
B) transition zone is prepared: the one layer of Cr film of FTO conductive glass surface magnetron sputtering after cleaned, three-dimensional as Tungstic anhydride.
Network and the transition zone of FTO electro-conductive glass, Cr film thickness is 50nm；
C) Tungstic anhydride. Seed Layer is prepared: take the sodium tungstate of 0.1mol, the diethanolamine of 0.06mol and 100ml dehydrated alcohol molten
Liquid, puts it in beaker, in room temperature magnetic agitation 30min so that it is be sufficiently mixed, then beaker is put into magnetic in 80 DEG C of oil baths
Power stirring 6h, obtains seed solution；Take cleaned in step one after FTO electro-conductive glass, slowly entered in seed solution,
Standing 3min, the most slowly pull-out FTO electro-conductive glass, keeping pull-out speed is 0.05cm/s, subsequently by the FTO conduction glass of pull-out
Glass is put in baking oven and is dried, and FTO electro-conductive glass is finally put into 300 DEG C of annealing 5h in Muffle furnace, wherein heats up in temperature-rise period
Speed is 5 DEG C/min；
D) growth Tungstic anhydride. three-dimensional grid nanostructured: preparation is containing tungsten hexachloride, 30mmol sodium tungstate, six times of 45mmol
The deionized water mixed solution of tetramine and 200ml, is added dropwise over 5ml ammonia and stirs, transferring it to autoclave
In inner bag；Taking and be covered with the FTO electro-conductive glass of tungsten oxide Seed Layer and tilt to lean against in the solution of autoclave inner bag, conducting surface is towards transferring
Put, after sealing, autoclave put in the baking oven being warmed up to 95 DEG C, react 24h, after reaction completely, be naturally down to room temperature,
Take out FTO electro-conductive glass, use deionized water rinsing 30s, obtain growing the light anode having Tungstic anhydride. three-dimensional grid nanostructured；
S2, preparation electrolyte and dyestuff:
Iodine/iodine three anion electrolyte that electrolyte application is traditional, first weighs the acetonitrile solution of 100ml, is added thereto to
The lithium iodide of 0.1M, 0.1M iodine, 0.6M 4-tert .-butylpyridine and the tetrabutylammonium iodide of 0.6M, the ultrasonic 5min of lucifuge, make
It fully dissolves；Then weigh the nano silver particles of 5g, be added in mixed solution, be sufficiently mixed；
Dye solution: weigh N719 powder 50mg, dehydrated alcohol 30ml, N719 is added in dehydrated alcohol, fully dissolve, lucifuge
Stirring 12h；
S3, encapsulation:
Take the dye solution of preparation in step S2 and put in brown glass ware, then growth is had Tungstic anhydride. three-dimensional grid nanometer
The light anode of structure enters in this brown glass ware, and lucifuge is sensitization 3h at 60 DEG C, takes out, then by the phase with Pt Catalytic Layer
Being packaged together with this light anode with size FTO electro-conductive glass, encapsulating material uses heat-sealing film, by electrolyte to electrode one end
Aperture inject, encapsulate aperture, connect wire, formed the present invention modified model DSSC.
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| CN101593629A (en) * | 2009-06-11 | 2009-12-02 | 上海交通大学 | Dye-sensitized solar cell anode of biomimetic structure and preparation method thereof |
| US20100051903A1 (en) * | 2008-08-28 | 2010-03-04 | Seo-Yong Cho | Method of aligning nanorods and related compositions |
| CN203465847U (en) * | 2013-05-03 | 2014-03-05 | 防城港思创信息技术有限公司 | Intelligent parking lot vehicle license plate recognition system |
| CN104465102A (en) * | 2014-12-29 | 2015-03-25 | 中南大学 | Dye-sensitized solar cell photo-anode and preparing method and application thereof |
| CN204884179U (en) * | 2015-07-10 | 2015-12-16 | 山东艾威尔信息科技有限公司 | Solar energy light filling formula license plate recognition device |
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| US20100051903A1 (en) * | 2008-08-28 | 2010-03-04 | Seo-Yong Cho | Method of aligning nanorods and related compositions |
| CN101593629A (en) * | 2009-06-11 | 2009-12-02 | 上海交通大学 | Dye-sensitized solar cell anode of biomimetic structure and preparation method thereof |
| CN203465847U (en) * | 2013-05-03 | 2014-03-05 | 防城港思创信息技术有限公司 | Intelligent parking lot vehicle license plate recognition system |
| CN104465102A (en) * | 2014-12-29 | 2015-03-25 | 中南大学 | Dye-sensitized solar cell photo-anode and preparing method and application thereof |
| CN204884179U (en) * | 2015-07-10 | 2015-12-16 | 山东艾威尔信息科技有限公司 | Solar energy light filling formula license plate recognition device |
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