CN106203249A - Fingerprint identification device - Google Patents
Fingerprint identification device Download PDFInfo
- Publication number
- CN106203249A CN106203249A CN201510645118.4A CN201510645118A CN106203249A CN 106203249 A CN106203249 A CN 106203249A CN 201510645118 A CN201510645118 A CN 201510645118A CN 106203249 A CN106203249 A CN 106203249A
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- Prior art keywords
- conductor layer
- layer
- thickness
- dielectric layer
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004020 conductor Substances 0.000 claims abstract description 183
- 230000006698 induction Effects 0.000 claims abstract description 49
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 28
- 239000010937 tungsten Substances 0.000 claims abstract description 28
- 238000001514 detection method Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 210
- 239000004065 semiconductor Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000011664 signaling Effects 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000015 effect on sense Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
Abstract
The invention discloses a fingerprint identification device, which is provided with a first conductor layer, a second conductor layer and a third conductor layer, wherein the first conductor layer comprises a plurality of induction electrodes for fingerprint detection; a first dielectric layer under the first conductor layer; a signal processing layer located below the first dielectric layer, the signal processing layer including a second conductor layer, a third conductor layer, and a second dielectric layer, the second conductor layer being above the third conductor layer, the second dielectric layer being located between the second conductor layer and the third conductor layer, the signal processing layer being configured to receive and process the sensing signal of the sensing electrode; the first dielectric layer is located between the first conductor layer and the second conductor layer, and has at least one first conductive tungsten plug, and the first conductor layer and the second conductor layer are electrically connected through the first conductive tungsten plug. According to the invention, the influence of electrostatic charges and noise on the sensing electrodes can be prevented, and the conductive tungsten plugs are used for electrically connecting the conductive layers, so as to improve the process yield.
Description
Technical field
The open a kind of fingeprint distinguisher of the present invention, particularly relates to a kind of capacitance type fingerprint device for identifying.
Background technology
Fig. 5 provides the cross-sectional schematic of existing capacitance type fingerprint device for identifying, wherein includes most layer conductor
Layer 40, is provided with dielectric layer 50, the conductor layer 40 of the superiors is separately coated with guarantor between adjacent conductive layers 40
Sheath 400.Result shown in Fig. 5 is arranged on semiconductor substrate (not shown), this semiconductor substrate
In in order to make semiconductor element, such as transistor etc. for make such as the components such as amplifier, upper
Two-layer conductor layer 40 respectively in order to make induction electrode 401 and electrostatic defending electrode 402, induction electrode
401 in order to carry out fingerprint detection, and electrostatic defending electrode 402 is in order to provide the effect of electrostatic defending.Transmission letter
Number required wire 403, it is possible to use the conductor layer 40 of lower makes.
In the prior art, the thickness of each conductor layer 40 is substantially the same, and the thickness of each dielectric layer 50 is the biggest
Cause identical.Preferably capacitance type fingerprint device for identifying has preferably antistatic capacity, and less miscellaneous
News and the sensing result of other factors interference induction electrode.Existing capacitance type fingerprint device for identifying still needs to be changed
Kind.
Also, in the dielectric layer 50 of prior art, be provided with conductive through hole 61 to electrically connect adjacent conductive layer
40.At existing capacitance type fingerprint device for identifying generally with al deposition in conductive through hole 61.
Summary of the invention
Because the shortcoming of aforesaid all prior aries, the purpose of the present invention include improving sensing accuracy,
Increase electrostatic to lead effect off, reduce noise (noise) or electrostatic influence induction electrode and minification,
Improve conductive effect etc..
For reaching above-mentioned purpose, the present invention provides a kind of fingeprint distinguisher, including:
One first conductor layer, it includes multiple induction electrode, and described induction electrode is in order to carry out fingerprint detection；
One first dielectric layer, is positioned at below this first conductor layer；And
One element layer signal processes layer, is positioned at below this first dielectric layer, this signal processing layer it include one the
Two conductor layers and, one the 3rd conductor layer and one second dielectric layer, this second conductor layer is at the 3rd conductor
Above Ceng, this second dielectric layer between this second conductor layer and the 3rd conductor layer, this element layer signal
Process layer in order to receive and to process the sensing signal of described induction electrode；
Wherein, this first dielectric layer is between this first conductor layer and this second conductor layer, and has at least
One first conduction tungsten plug, this first conductor layer and this second conductor layer are via described first conduction tungsten plug shape
Become electrical connection.
It is an advantage of the current invention that the thickness of the first conductor layer for making induction electrode increases, contribute to
Promote the uniformity of each induction electrode；Furthermore, the thickness of the second dielectric layer it is more than by the thickness of the first dielectric layer
Degree, contributing to improving the noise from signal processing layer affects and is positioned at the induction electrode of the first conductor layer；Utilize
Conduction tungsten plug forms the electrical connection between the first conductor layer and the second conductor layer, the advantage of conduction tungsten plug
Good for conductive effect, and size is little, contributes to reducing the size of capacitance type fingerprint device for identifying, and improves
Yield.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as to the present invention's
Limit.
Accompanying drawing explanation
Fig. 1 is the side-looking enlarged section schematic diagram of first embodiment of the invention；
Fig. 2 is the side-looking enlarged section schematic diagram of second embodiment of the invention；
Fig. 3 is the side-looking enlarged section schematic diagram of third embodiment of the invention；
Fig. 4 is the side-looking enlarged section schematic diagram of fourth embodiment of the invention；
Fig. 5 is the side-looking enlarged section schematic diagram of prior art.
Wherein, reference
100,100A protective layer L signal processes layer
10,10A, 10B, 10C first conductor layer
11,11A, 11B, 11C second conductor layer
12,12A, 12B, 12C the 3rd conductor layer
13A, 13C the 4th conductor layer 14B, 14C the 5th conductor layer
15B, 15C bucking electrode
101,101B, 101C induction electrode 102,102A, 1021A electrostatic defending electrode
20,20A, 20B, 20C first dielectric layer
21,21A, 21B, 21C second dielectric layer
22A, 22C the 3rd dielectric layer 23B, 23C the 4th dielectric layer
30,30A wire 31,32,33A, 34B conduct electricity tungsten plug
400 protective layer 40 conductor layers
401 induction electrode 402 electrostatic defending electrodes
403 wire 50 dielectric layers
61 conductive through hole 611 conductive films
Detailed description of the invention
Hereinafter coordinate accompanying drawing and embodiments of the invention, the technological means of the present invention is expanded on further.
The first embodiment that Fig. 1 shows, includes one first conductor layer 10,1 first dielectric layer 20 and
Signal processing layer L.
A protective layer 100 it is coated with on first conductor layer 10.Protective layer 100 can be single or multiple lift
Structure.When carrying out fingerprint detection, finger is placed on the upper surface of protective layer 100 by user.First leads
Body layer 10 comprises multiple induction electrode 101, and induction electrode 101 is in order to carry out fingerprint detection.First conductor
Also can comprise multiple electrostatic defending electrode 102 in layer 10, described electrostatic defending electrode 102 is in order to provide quiet
Electricity protection effect, to avoid electrostatic breakdown induction electrode 101.Separately, the first conductor layer 10 also can comprise
There is conductive connection pads.In other words, above-mentioned induction electrode 101, electrostatic defending electrode 102 and conductive connection pads
Can be to make of the conductor of same layer.In one embodiment, electrostatic defending electrode 102 is arranged in sensing
Around, conductive connection pads is then arranged in beyond electrostatic defending electrode 102 and induction electrode 101 electrode 101
Region.Electrostatic defending electrode 102 can be connected to earth terminal (ground) by internal line configuring
Or an electrostatic discharge protection circuit.
First dielectric layer 20, is positioned at the lower section of the first conductor layer 10.Signal processing layer L, is positioned at first Jie
The lower section of electric layer 20.Signal processing layer L in order to receive and process induction electrode 101 sensing signal or
The electrostatic charge of electrostatic defending electrode 102 is derived and leads it off.Signal processing layer L includes one second conductor
The semiconductor substrate of layer 11,1 the 3rd conductor layer 12,1 second dielectric layer 21 and lower section is (in figure not
Show), the second conductor layer 11 is in the lower section of the first dielectric layer 20, and the top of the 3rd conductor layer 12,
Second dielectric layer 21 between the second conductor layer 11 and the 3rd conductor layer 12, this second conductor layer 11
And the 3rd include wire 30 in conductor layer 12, semiconductor substrate (not shown) is at the 3rd conductor layer
The lower section of 12.Being provided with semiconductor element in this semiconductor substrate, such as transistor etc. are such as put for making
The components such as big device.In different embodiments, between the 3rd conductor layer 12 and semiconductor substrate, can
The structure of single or multiple lift can be there is.
First dielectric layer 20 is located between this first conductor layer 10 and this second conductor layer 11, and this first
Dielectric layer 20 covers this second conductor layer 11, and this second dielectric layer 21 covers the 3rd conductor layer 12, the
One dielectric layer 20 is provided with at least one first conduction tungsten plug 31, and the second dielectric layer 21 is provided with at least one second
Conduction tungsten plug 32.First conductor layer 10 and this second conductor layer 11 are via the first conduction tungsten plug 31 shape
Become electrical connection so that the sensing signal of induction electrode 101 can transmit via this first conduction tungsten plug 31
To circuit 30.Second conductor layer 11 and the 3rd conductor layer 12 are formed via the second conduction tungsten plug 32 and are electrically connected
Connect so that between the circuit 30 of different layers, signal can be transmitted.This first and second conduction tungsten plug 31
And 32 is formed thereby with tungsten plug technique (tungsten plug process), tungsten plug technique is quasiconductor skill
Usual knowledge in art field, therefore not in this to go forth.
The thickness of the first conductor layer 10 is more than the second conductor layer 11 and thickness of the 3rd conductor layer 12, and the
The thickness of one dielectric layer 20 is more than the thickness of the second dielectric layer 21.Imply that in this embodiment, electrostatic defending
The thickness of electrode 102 or induction electrode 101 is more than the thickness of other conductors of lower section (such as circuit 30),
And the medium thickness between induction electrode 101 with adjacent one layer of conductor, the two-layer adjacent more than other is led
Medium thickness between body.In one embodiment, the thickness of the first conductor layer 10 be 2 μm to 5 μm,
The thickness of the second conductor layer 11 and the 3rd conductor layer 12 is 0.4 μm to 0.8 μm, the first dielectric layer 20
Thickness is 2 μm to 8 μm, and the thickness of the second dielectric layer 21 is that 1 μm is to 1.8 μm.It is to say, it is quiet
Electricity guard electrode 102 or the thickness of induction electrode 101 can be 2 μm to 5 μm, and be used for transmitting letter
Number the thickness of wire 30 can be that 0.4 μm is to 0.8 μm.
Referring to Fig. 2 and show the second embodiment, the second embodiment and first embodiment difference are further
Comprise one the 4th conductor layer 13A and one the 3rd dielectric layer 22A, the 3rd dielectric layer 22A be located at this first
On conductor layer 10A, and the 3rd dielectric layer 22A covers this first conductor layer 10A, the 4th conductor layer
13A is located on the 3rd dielectric layer 22A, and this protective layer 100A covers the 4th conductor layer 13A, should
4th conductor layer 13A can include electrostatic defending electrode 1021A, and can in this first conductor layer 10A
Not including electrostatic defending electrode, maybe can include corresponding electrostatic defending electrode 102A, the 4th leads
Body layer 13A also can include conductive connection pads.In this embodiment, at the electrostatic of the 4th conductor layer 13A
Guard electrode 1021A and the electrostatic defending electrode 102A at the first conductor layer 10A are by one the 3rd conduction
Tungsten plug 33A forms electrical connection.In the embodiment of fig. 2, the thickness of the 4th conductor layer 13A is more than the
The thickness of one conductor layer 10A, and the thickness of this first conductor layer 10A and the 4th conductor layer 13A is big
In this second conductor layer 11A and the thickness of the 3rd conductor layer 12A, and this first dielectric layer 20A and should
The thickness of the 3rd dielectric layer 22A thickness more than this second dielectric layer 21A.It is to say, it is real at this
Execute in example, the thickness of the electrostatic defending electrode 1021A thickness more than induction electrode 101A and electrode 102A,
And the thickness of electrostatic defending electrode 102A and induction electrode 101A is more than lower section other conductors (such as line
Road 30A) thickness.Thickness between induction electrode 101A and electrostatic defending electrode 1021A and sensing
Medium thickness between electrode 101A with adjacent one layer of conductor, more than other adjacent two-layer conductors it
Between medium thickness.
In one embodiment, the thickness of this first conductor layer 10A is 1 μm to 3 μm, the 4th conductor layer
Thickness 2 μm of 13A to 5 μm, the thickness of this second conductor layer 11A and the 3rd conductor layer 12A is
0.4 μm to 0.8 μm, the thickness of this first dielectric layer 20A and the 3rd dielectric layer 22A be 2 μm to 8 μm,
The thickness of this second dielectric layer 21A is that 1 μm is to 1.8 μm.It is to say, be closer to protective layer 100A
The thickness of electrostatic defending electrode 1021A can be 2 μm to 5 μm, the induction electrode 101A of next layer
With the thickness of electrostatic defending electrode 102A can be 1 μm to 3 μm, and be positioned at other layers for transmitting letter
Number the thickness of wire 30A can be that 0.4 μm is to 0.8 μm.
Referring to Fig. 3 and show the 3rd embodiment, the 3rd embodiment and first embodiment difference are further
Comprising one the 5th conductor layer 14B and one the 4th dielectric layer 23B, the 4th dielectric layer 23B is positioned at the 3rd
Below conductor layer 12B, the 5th conductor layer 14B is positioned at below the 4th dielectric layer 23B, real at this
Executing in example, the second conductor layer 11B includes at least one bucking electrode 15B, and bucking electrode 15B is at least
One acts on the induction electrode 101B preventing the noise of underlying circuit from having influence on top.In one embodiment,
One bucking electrode 15B is set below each induction electrode 101B, in various embodiments,
The configuration of the bucking electrode 15B in two conductor layer 11B can also have different changes, but has no effect on sense
Answer the signaling path of electrode 101B.4th dielectric layer 23B has at least one the 4th conduction tungsten plug
34B, via described 4th conductive plugs 34B between the 3rd conductor layer 12B and the 5th conductor layer 14B
Form electrical connection.
In the embodiment shown in fig. 3, the thickness of the first conductor layer 10B more than the second conductor layer 11B, the
Three conductor layer 12B and the thickness of the 5th conductor layer 14B, and the thickness of the first dielectric layer 20B is more than the
Two dielectric layer 21B and the thickness of the 4th dielectric layer 23B.In one embodiment, this first conductor layer 10B
Thickness be 2 μm to 5 μm, this second conductor layer 11B, the 3rd conductor layer 12B and the 5th conductor
Layer 14B thickness be 0.4 μm to 0.8 μm, the thickness of this first dielectric layer 20B be 2 μm to 8 μm,
The thickness of this second dielectric layer 21B and the 4th dielectric layer 23B is that 1 μm is to 1.8 μm.
Refer to Fig. 4 and show the 4th embodiment.The most sequentially be set to the 4th conductor layer 13C,
3rd dielectric layer 22C, this first conductor layer 10C, this first dielectric layer 20C, this second conductor layer 11C,
This second dielectric layer 21C, the 3rd conductor layer 12C, the 4th dielectric layer 23C and the 5th conductor layer
14C.Wherein signal processing layer L include this second conductor layer 11C, the 3rd conductor layer 12C, the 5th
Conductor layer 14C, this second dielectric layer 21C and the 4th dielectric layer 23C.The embodiment of Fig. 4 can be managed
Solve as increasing the 4th dielectric layer 23C and the 5th conductor layer 14C in the embodiment shown in Fig. 2.At this
In embodiment, the second conductor layer 11C includes at least one bucking electrode 15C, and bucking electrode 15C is extremely
Few one acts on the induction electrode 101C preventing the noise of underlying circuit from having influence on top.In an embodiment
In, a bucking electrode 15C is set below each induction electrode 101C, in various embodiments,
The configuration of the bucking electrode 15C in the second conductor layer 11C can also have different changes, but not shadow
Ring the signaling path of induction electrode 101C.
The thickness of this first conductor layer 10C and the 4th conductor layer 13C more than this second conductor layer 11C,
3rd conductor layer 12C and the thickness of the 5th conductor layer 14C, and this first dielectric layer 20C and should
The thickness of the 3rd dielectric layer 22C is more than this second dielectric layer 21C and the thickness of the 4th dielectric layer 23C.
In one embodiment, the thickness of this first conductor layer 10C is 1 μm to 3 μm, the 4th conductor layer 13C
Thickness 2 μm to 5 μm, this second conductor layer 11C, the 3rd conductor layer 12C and the 5th conductor layer
The thickness of 14C is 0.4 μm to 0.8 μm, this first dielectric layer 20C and the thickness of the 3rd dielectric layer 22C
Degree is 2 μm to 8 μm, the thickness of this second dielectric layer 21C and the 4th dielectric layer 23C be 1 μm extremely
1.8μm.The characteristic of foregoing embodiments can be summarized as follows:
1. the thickness of induction electrode 101 increases, and can reduce because technological factor causes different induction electrode 101
Difference in thickness account for the ratio of gross thickness of induction electrode 101, and then promote the uniformity of induction electrode 101,
Reduce the technological factor adverse effect for measurement.
2. the distance between induction electrode 101 and adjacent conductive layers increases, and can increase conductor layer to induction electrode
The impedance in path between 101, and then effectively prevent the noise of the component below induction electrode 101 from affecting
To induction electrode 101.
3. use tungsten plug technique to make conduction tungsten plug 31 and form the electrical connection between conductor layer, less
It is easily formed open circuit, yield can be promoted.And it is less to use tungsten plug technique to make conduction tungsten plug 31 aperture,
Be conducive to the miniaturization of product.For the dielectric layer thickeied, make plug according to materials such as such as aluminum,
Need the biggest aperture at the thickest dielectric layer, and easily produce fracture, affect yield.
4. increase electrostatic defending electrode thickness, can reduce electrostatic defending electrode impedance, be conducive to electricity
Lotus is led off, promotes antistatic protection function.
5. increase the distance between electrostatic defending electrode 1021A and induction electrode 101A, electrostatic can be made to prevent
Protect the electrode 1021A impedance increase to the path of induction electrode 101A so that electric charge is difficult to by electrostatic defending
Electrode 1021A moves toward induction electrode 101A, can promote the effect of protection induction electrode.
Each accompanying drawing and explanation thereof, the most various enforcement aspects of the present invention, are familiar with semiconductor technology
The personage in field, when understanding, potentially includes the conductive pattern of multiple use, such as at Fig. 1 in a conductor layer
The first conductor layer 10 include the induction electrode 101 for carrying out fingerprint detection and provide electrostatic defending
The electrostatic defending electrode 102 of function.Between the conductor element that each function in a conductor layer is different, also
Being to be placed separated by dielectric material, medium thickness mentioned in the above-described embodiments is the equal of different layers conductor
Between vertical dimension.
Certainly, the present invention also can have other various embodiments, without departing substantially from present invention spirit and the feelings of essence thereof
Under condition, those of ordinary skill in the art work as can make various corresponding change and deformation according to the present invention, but
These change accordingly and deform the protection domain that all should belong to appended claims of the invention.
Claims (11)
1. a fingeprint distinguisher, it is characterised in that including:
One first conductor layer, it includes multiple induction electrode, and described induction electrode is in order to carry out fingerprint detection；
One first dielectric layer, is positioned at below this first conductor layer；And
One signal processing layer, is positioned at below this first dielectric layer, this signal processing layer include one second conductor layer,
One the 3rd conductor layer and one second dielectric layer, this second conductor layer is above the 3rd conductor layer, and this is years old
Two dielectric layers are between this second conductor layer and the 3rd conductor layer, and this signal processing layer is in order to receive and to locate
Manage the sensing signal of described induction electrode；
Wherein, this first dielectric layer is between this first conductor layer and this second conductor layer, and has at least
One first conduction tungsten plug, this first conductor layer and this second conductor layer are via described first conduction tungsten plug shape
Become electrical connection；
Wherein, the thickness of this first conductor layer is respectively greater than this second conductor layer and the thickness of the 3rd conductor layer
Degree, the thickness of this first dielectric layer is more than the thickness of this second dielectric layer.
Fingeprint distinguisher the most according to claim 1, it is characterised in that in this first conductor layer
Comprise at least one electrostatic defending electrode.
Fingeprint distinguisher the most according to claim 1, it is characterised in that further include one
4th conductor layer and one the 3rd dielectric layer are positioned at above this first conductor layer, and the 3rd dielectric layer is positioned at the 4th
Between conductor layer and this first conductor layer, the 4th conductor layer includes at least one electrostatic defending electrode, should
3rd dielectric layer has at least one second conduction tungsten plug, warp between this first conductor layer and the 4th conductor layer
Being formed electrical connection by described second conductive plugs, wherein the thickness of the 4th conductor layer is respectively greater than this and second leads
Body layer and the thickness of the 3rd conductor layer, the thickness of the 3rd dielectric layer is more than the thickness of this second dielectric layer.
Fingeprint distinguisher the most according to claim 3, it is characterised in that in this first conductor layer
Comprise at least one electrostatic defending electrode, and electrically connect with the electrostatic defending electrode of the 4th conductor layer.
Fingeprint distinguisher the most according to claim 1 and 2, it is characterised in that this first conductor
The thickness of layer is 2 μm to 5 μm, and the thickness of this first dielectric layer is that 2 μm are to 8 μm.
Fingeprint distinguisher the most according to claim 5, it is characterised in that this second conductor layer and
The thickness of the 3rd conductor layer is respectively 0.4 μm to 0.8 μm, the thickness of this second dielectric layer be 1 μm extremely
1.8μm。
7. according to the fingeprint distinguisher described in claim 3 or 4, it is characterised in that this first conductor
Layer thickness be 1 μm to 3 μm, the thickness of the 4th conductor layer be 2 μm to 5 μm, this first dielectric layer and
The thickness of the 3rd dielectric layer is that 2 μm are to 8 μm.
Fingeprint distinguisher the most according to claim 7, it is characterised in that this second conductor layer and
The thickness of the 3rd conductor layer is respectively 0.4 μm to 0.8 μm, the thickness of this second dielectric layer be 1 μm extremely
1.8μm。
Fingeprint distinguisher the most according to claim 1, it further includes one the 5th conductor layer
And one the 4th dielectric layer, the 5th conductor layer is located at below the 3rd conductor layer, and the 4th dielectric layer is located at
Between 3rd conductor layer and the 5th conductor layer, wherein this second conductor layer is a screen layer and has at least
One bucking electrode, the lower section of this induction electrode each is correspondingly arranged this bucking electrode.
Fingeprint distinguisher the most according to claim 1, it is characterised in that this second dielectric layer has
There is at least one the 3rd conduction tungsten plug, lead via the described 3rd between this second conductor layer and the 3rd conductor layer
Electric mortiser bolt forms electrical connection.
11. fingeprint distinguishers according to claim 9, it is characterised in that the 4th dielectric layer tool
There is at least one the 4th conduction tungsten plug, lead via the described 4th between the 3rd conductor layer and the 5th conductor layer
Electric mortiser bolt forms electrical connection.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562166017P | 2015-05-25 | 2015-05-25 | |
| US62/166,017 | 2015-05-25 | ||
| TW104131376 | 2015-09-23 | ||
| TW104131376A TWI553563B (en) | 2015-05-25 | 2015-09-23 | Fingerprint identification device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106203249A true CN106203249A (en) | 2016-12-07 |
Family
ID=57453351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510645118.4A Pending CN106203249A (en) | 2015-05-25 | 2015-10-08 | Fingerprint identification device |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20160138336A (en) |
| CN (1) | CN106203249A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022001538A1 (en) * | 2020-06-30 | 2022-01-06 | 京东方科技集团股份有限公司 | Ultrasonic sensor, method for preparing ultrasonic sensor, and display apparatus |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1278347A (en) * | 1997-05-16 | 2000-12-27 | 奥森泰克公司 | Fingerprint sensor including antisotropic dielectric coating and associated method |
| CN1217186C (en) * | 2002-03-20 | 2005-08-31 | 富士通株式会社 | Capacitance investigating type sensor and production method thereof |
| JP2005327898A (en) * | 2004-05-14 | 2005-11-24 | Fujitsu Ltd | Semiconductor device and its manufacturing method |
| CN201111087Y (en) * | 2007-09-05 | 2008-09-03 | 飞信半导体股份有限公司 | Touch sliding type finger print identifier encapsulation structure |
| CN203882323U (en) * | 2014-05-14 | 2014-10-15 | 力传扬股份有限公司 | A capacitive fingerprint sensor with an electrostatic protection structure |
| US20150071511A1 (en) * | 2013-09-10 | 2015-03-12 | Image Match Design Inc. | Finger detection device and method of fingerprint recognition integrated circuit |
-
2015
- 2015-10-08 CN CN201510645118.4A patent/CN106203249A/en active Pending
- 2015-10-23 KR KR1020150147809A patent/KR20160138336A/en not_active Application Discontinuation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1278347A (en) * | 1997-05-16 | 2000-12-27 | 奥森泰克公司 | Fingerprint sensor including antisotropic dielectric coating and associated method |
| CN1217186C (en) * | 2002-03-20 | 2005-08-31 | 富士通株式会社 | Capacitance investigating type sensor and production method thereof |
| JP2005327898A (en) * | 2004-05-14 | 2005-11-24 | Fujitsu Ltd | Semiconductor device and its manufacturing method |
| CN201111087Y (en) * | 2007-09-05 | 2008-09-03 | 飞信半导体股份有限公司 | Touch sliding type finger print identifier encapsulation structure |
| US20150071511A1 (en) * | 2013-09-10 | 2015-03-12 | Image Match Design Inc. | Finger detection device and method of fingerprint recognition integrated circuit |
| CN203882323U (en) * | 2014-05-14 | 2014-10-15 | 力传扬股份有限公司 | A capacitive fingerprint sensor with an electrostatic protection structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022001538A1 (en) * | 2020-06-30 | 2022-01-06 | 京东方科技集团股份有限公司 | Ultrasonic sensor, method for preparing ultrasonic sensor, and display apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160138336A (en) | 2016-12-05 |
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Application publication date: 20161207 |