CN106200140A - Photoelectric display substrate, manufacture method and electro-optical display device - Google Patents
Photoelectric display substrate, manufacture method and electro-optical display device Download PDFInfo
- Publication number
- CN106200140A CN106200140A CN201510161799.7A CN201510161799A CN106200140A CN 106200140 A CN106200140 A CN 106200140A CN 201510161799 A CN201510161799 A CN 201510161799A CN 106200140 A CN106200140 A CN 106200140A
- Authority
- CN
- China
- Prior art keywords
- substrate
- electrode
- conductive
- electro
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention relates to a kind of photoelectric display substrate, manufacture method and electro-optical display device.This photoelectric display substrate, including: substrate；And it being uniformly distributed conducting medium over the substrate, described substrate has different side's electric conductivity, realizes electrically conducting by described conductive materials in a thickness direction, and insulate in the in-plane direction.Present invention also offers the manufacture method of this substrate and include the electro-optical display device of this substrate, it is applicable to electric circuit inspection, by applying horizontally or vertically electric field at the display medium of electro-optical display device, make electro-optical display device realize the change of brightness or color, judge to be executed alive local defect according to the result of variations of brightness or color.
Description
Technical field
The present invention relates to a kind of photoelectric display technical field, especially relate to a kind of photoelectric display substrate, manufacture method and electro-optical display device for testing circuit electrical characteristic.
Background technology
In recent years, Display Technique is fast-developing.Display Technique is that a kind of electro-optic conversion technology, i.e. basis are added in the electric field level of the display medium both sides such as liquid crystal, thus changes the light-out effect of display medium.Display Technique based on electro-optic conversion directly can be transformed into the different size of signal of telecommunication optical signal of different brightness, and is converted into the optical signal of different colours, thus is shown as pattern.Electro-optical characteristic from Display Techniques such as liquid crystal is counter to be pushed away, can be according to different brightness or the optical signal of different colours, it is judged that be added in the electric field level of the both sides of the photoelectric display media such as liquid crystal.But the on or off characteristic using the display device test circuit such as liquid crystal is not also suggested.
In prior art, general employing flying probe circuit, but flying probe circuit needs the detection voltage of the most up to a hundred volts, and when flying probe, external mechanical force promotes flying needle can prick the line pattern on circuit, easily causes the surface damage of electricity land line pattern.
Summary of the invention
In view of this, the purpose of the present invention is aiming at the above-mentioned or other problem that prior art exists, a kind of photoelectric display substrate, manufacture method and electro-optical display device are provided, can be used for the electrology characteristic of testing circuit, it is possible not only to visual pattern ground testing circuit defect, energy consumption can also be saved, it is achieved circuit pattern detection mode disposable, diversified.
For reaching above-mentioned or other purpose, one embodiment of the invention proposes a kind of photoelectric display substrate, including: dielectric substrate, there are both sides, side is distributed multiple first electrode, and opposite side is distributed multiple second electrode；And the multiple conductive through holes being evenly distributed in described dielectric substrate, conductive through hole described in connects the second electrode described in the first electrode and described in；Described substrate has different side's electric conductivity, realizes electrically conducting by described conductive through hole in a thickness direction, and insulate in the in-plane direction.
Further, described first electrode is corresponding on described opposite side with described second electrode on described side to be distributed in dot matrix, and described first and second electrode uses metal, alloy, composition metal or metal conductive oxide material.
Further, being shaped as of described first and second electrode is square or circular, the width of the first electrode or a diameter of A, and the distance between two adjacent described first electrodes is B, wherein, A/B >=1.
For reaching above-mentioned or other purpose, another embodiment of the present invention proposes a kind of photoelectric display substrate, including: Semiconductor substrate, there are both sides, side is distributed multiple 3rd electrode, and opposite side is distributed multiple 4th electrode；And it being uniformly distributed multiple conductive poles on the semiconductor substrate, conductive pole described in connects the 4th electrode described in the 3rd electrode and described in；Described substrate has different side's conductive plate, realizes electrically conducting by described conductive pole in a thickness direction, and insulate in the in-plane direction.
Further, third and fourth electrode described and described conductive pole one-shot forming are formed in described dielectric substrate.
Further, being shaped as of third and fourth electrode described is square or circular, the width of the 3rd electrode or a diameter of C, and the distance between two adjacent described 3rd electrodes is D, wherein, and C/D >=1.
For reaching above-mentioned or other purpose, further embodiment of this invention proposes a kind of photoelectric display substrate, including: resin film substrate and be evenly distributed on the conductive particle in described resin film substrate, described substrate has different side's conductive plate, realize electrically conducting by described conductive particle in a thickness direction, and insulate in the in-plane direction.
Further, the particle diameter of described conductive particle more than the thickness of described resin adhesive agent thin film, protrudes through described thin film and in the both side surface of described thin film.
For reaching above-mentioned or other purpose, yet another embodiment of the invention proposes a kind of photoelectric display substrate, including: substrate；And it being uniformly distributed conducting medium over the substrate, described substrate has different side's electric conductivity, realizes electrically conducting by described conductive materials in a thickness direction, and insulate in the in-plane direction.
For reaching above-mentioned or other purpose, one embodiment of the invention also proposed the manufacture method of a kind of photoelectric display substrate, including: a dielectric substrate is provided, forms the multiple conductive through holes being evenly distributed in described dielectric substrate；Conducting medium is injected in described through hole；Formed and be evenly distributed on multiple first electrodes of described dielectric substrate both sides and multiple second electrode, conductive through hole described in one connects the second electrode described in the first electrode and described in, described substrate has different side's conductive plate, realize electrically conducting by described conductive particle in a thickness direction, and insulate in the in-plane direction.
Further, described first and second electrode is formed at described dielectric substrate both sides by ink jet printing, silk screen printing or paster technique.
For reaching above-mentioned or other purpose, another embodiment of the present invention also proposed the manufacture method of a kind of photoelectric display substrate, including: semi-conductive substrate is provided, laser annealing is used to be formed at equally distributed multiple 3rd electrodes in described Semiconductor substrate both sides, multiple 4th electrode, and connect multiple conductive poles of third and fourth electrode described, described substrate has different side's conductive plate, realizes electrically conducting by described conductive particle in a thickness direction, and insulate in the in-plane direction.
Further, third and fourth electrode described and described conductive pole are formed in described dielectric substrate by laser annealing one-shot forming.
For reaching above-mentioned or other purpose, further embodiment of this invention also proposed the manufacture method of a kind of photoelectric display substrate, including: resin adhesive agent thin film is provided, uniformly dispersing conductive particle in described resin adhesive agent thin film, wherein, the particle diameter of described conductive particle is more than the thickness of described resin adhesive agent thin film, and described substrate has different side's conductive plate, realize electrically conducting by described conductive particle in a thickness direction, and insulate in the in-plane direction.
For reaching above-mentioned or other purpose, yet another embodiment of the invention also proposed a kind of electro-optical display device, including: the substrate described in above-described embodiment；The counter substrate being oppositely arranged with described substrate；And display medium, it is configured between described substrate and described counter substrate.
Further, on described display medium side, it is configured with transparency conducting layer in described counter substrate.
Further, it is additionally included on a side surface of described counter substrate the color film layer of configuration, it is coated with described transparent
Conductive layer.
Further, described display medium is liquid crystal, deviates from being configured with Polarizer on described display medium side in described counter substrate, and is configured with reflecting layer in the side of described substrate.
Compared with prior art, the invention have the advantages that
The electrooptical measuring device that the present invention provides is applicable to the electrical characteristic of testing circuit, changed by the display medium generation brightness flop in electro-optical display device or color, thus on electro-optical display device, demonstrate circuit electric characteristic, finally can accurately, the short circuit of decision circuitry intuitively and open circuit conditions.Not only can reduce detection voltage, intensifier reliability and durability, it is also possible to improve detection efficiency and the fineness of testing circuit can be improved by electrode or conductive particle layout on substrate.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and coordinate accompanying drawing to be described in detail below.
Accompanying drawing explanation
Figure 1A is the generalized section that the present invention schematically shows electro-optical display device；
Figure 1B is the generalized section that the present invention schematically shows the electro-optical display device of configuration transparency conducting layer；
Fig. 2 is the generalized section that the present invention schematically shows the electro-optical display device containing Polarizer；
Fig. 3 A is the square conducting medium that the present invention schematically shows on substrate in array distribution；
Fig. 3 B is the circular conductive medium that the present invention schematically shows on substrate in array distribution；
Fig. 4 is that the present invention is illustrated schematically as first embodiment substrate manufacture schematic diagram；
Fig. 5 is the making schematic diagram that the present invention schematically shows the second embodiment substrate；
Fig. 6 is that the present invention schematically shows the floor map of conductive particle distribution on the 3rd embodiment substrate；
Fig. 7 A is the generalized section that the present invention schematically shows the electro-optical display device of the 4th embodiment；
Fig. 7 B is the floor map that the present invention schematically shows the electro-optical display device of the 4th embodiment；
Fig. 8 A is the generalized section that the present invention schematically shows the electro-optical display device of the 5th embodiment；
Fig. 8 B is the electro-optical display device floor map that the present invention schematically shows the 5th embodiment；
Fig. 9 A is the operation principle schematic diagram that the present invention schematically shows the electro-optical display device based on transverse electric field of sixth embodiment；
Fig. 9 B is the electro-optical display device pattern displaying floor map based on transverse electric field that the present invention schematically shows sixth embodiment；
Figure 10 A is the operation principle schematic diagram that the present invention schematically shows the electro-optical display device based on longitudinal electric field of sixth embodiment；
Figure 10 B is the electro-optical display device pattern displaying floor map based on longitudinal electric field that the present invention schematically shows sixth embodiment.
Detailed description of the invention
Figure 1A, 1B are the generalized section schematically showing electro-optical display device of the present invention.
As shown in Figure 1A, it is provided that a kind of electro-optical display device, including upper substrate 10, infrabasal plate 30, and the display medium 20 being clipped between upper substrate 10 and infrabasal plate 30.Described upper substrate 10 and described infrabasal plate 30 are enclosed in display medium 20 between described upper substrate 10 and described infrabasal plate 30 by modes such as gluings in surrounding.Electro-optical display device shown in Figure 1A, needs to apply display medium 20 transverse electric field of X/Y plane during work.
As shown in Figure 1B, it is provided that a kind of electro-optical display device, including upper substrate 10, infrabasal plate 30, and the display medium 20 being clipped between upper substrate 10 and infrabasal plate 30.Described upper substrate 10 and described infrabasal plate 30 are enclosed in display medium 20 between described upper substrate 10 and described infrabasal plate 30 by modes such as gluings in surrounding.Electro-optical display device shown in Figure 1B, needs to apply display medium 20 longitudinal electric field of Z-direction during work.It is therefore desirable at upper substrate 10 near display medium 20 side covering transparency conducting layer 11.
Described upper substrate 10 is transparency carrier, it is therefore preferable to glass substrate, or the resin film such as PET, PI.Needing to carry out the occasion of colored display, can be at upper substrate 10 near the color film layer (Color Filter, CF) of display medium 20 side covering.At existing color film layer, there is again the occasion of transparency conducting layer, it is preferable that transparency conducting layer 11 covers color film layer, i.e. transparency conducting layer closer to display medium 20.
Described display medium 20 can be the materials such as liquid crystal, charged particle, hydrophobic pigment and the solution of water, electrochromic material.When display medium 20 is twisted nematic (Twist Nematic, TN) liquid crystal, or in-plane switching (In Plane Switching, IPS) liquid crystal, or vertical orientation (Vertical Alignment, VA) liquid crystal, or blue phase (Blue Phase, BP) liquid crystal, or optical compensation curved arrangement (Optically Compensated Birefringence, OCB), during liquid crystal, need to stick polaroid at upper substrate 10 away from the side of display medium 20.Fig. 2, as a example by the structure containing transparency conducting layer, provides the position of Polarizer.As in figure 2 it is shown, use the occasion of Polarizer 12, need the material in upper surface 35 use of described infrabasal plate 30 with certain reflection function accordingly.
Described infrabasal plate 30 is anisotropy conductive plate, or anisotropic conductive film.At the Z axis thickness direction of described infrabasal plate 30, realize infrabasal plate 30 by conducting medium 31 and near display medium side and deviate from being electrically connected between display medium side.In the X/Y plane direction of described infrabasal plate 30, electrical insulation between conducting medium and conducting medium.
In a concrete implementation, conducting medium 31 can be any shape；Can be the conductive materials such as metal, alloy, composition metal or metal-oxide；Can be formed on the infrabasal plate 30 of above-mentioned electro-optical display device by processing technology such as ink jet printing, silk screen printing or pasters.
Preferably, as shown in Figure 3A, described conducting medium 31 is square structure on X/Y plane, and conducting medium is array distribution.Conducting medium 31 is in pitch P=A+B of X/Y plane, and wherein A is the width of square conducting medium 31, and B is the distance between conducting medium, comprises the spacing of X-direction and the spacing of Y direction.The width of square conducting medium 31 is the biggest, display medium 20 can controlled area the biggest.Preferably, A/B >=1.
Preferably, as shown in Figure 3 B, described conducting medium 31 rounded structure on X/Y plane, conducting medium is array distribution.Conducting medium 31 is in pitch P=C+D of X/Y plane, and wherein C is the diameter of circular conductive medium 31, and D is the distance between conducting medium, comprises the spacing of X-direction and the spacing of Y direction.The diameter of circular conductive medium 31 is the biggest, display medium 20 can controlled area the biggest.Preferably, C/D >=1.
Embodiment one
It is the manufacture method during insulated substrates such as glass that embodiment one provides infrabasal plate.When infrabasal plate is the insulated substrates such as glass, make infrabasal plate it is crucial that make and turn on up and down, and the conductive hole insulated each other.
The infrabasal plate that embodiment one provides is the insulated substrate being dispersed with conductive hole, and described conductive hole is being connected with the electrode on described insulated substrate surface near display medium side, and described conductive hole is connected deviating from the display medium side electrode with described insulated substrate surface；The described insulated substrate surface electrode near display medium side is upper electrode, and it is bottom electrode that described insulated substrate deviates from the surface electrode of display medium side；Described upper electrode is connected by the conducting of described conductive hole with described bottom electrode.
Fig. 4 is the making schematic diagram of the electro-optical display device infrabasal plate of first embodiment of the invention.
First, on infrabasal plate 30, by drill bit machine drilling, or by laser fixed point punching, or carve hole by chemical solution or chemical gas fixed point, form the through hole 39 of upper and lower surface break-through；
Then, through hole 39 injects conducting medium 31；
Then, on one of them surface of infrabasal plate 30, corresponding conducting medium 31 forms upper electrode 33 (or bottom electrode 32)；
Finally, on the another one surface of infrabasal plate 30, corresponding conducting medium 31 forms bottom electrode 32 (or upper electrode 33)；
Described bottom electrode 32, conducting medium 31 and upper electrode 33 are being electrically connected the most each other, wherein, the size of described upper electrode 33 and bottom electrode 32 can be different, and selectively, the infrabasal plate 30 described bottom electrode 32 near display medium side is less than the area of the upper electrode 33 of corresponding opposite side.
In the occasion using chemical solution or chemical gas fixed point to carve hole, preferably, first on infrabasal plate, coat a layer photoetching glue, then the mask plate consistent with conductive hole distribution patterns is used to be exposed photoresist processing, then the photoresist developing on conductive hole position is removed, then with chemical solution or chemical gas, infrabasal plate material is performed etching, until infrabasal plate is cut through.
Using the occasion of liquid crystal and Polarizer, needing at described infrabasal plate 30 near the side of liquid crystal material, form one layer of thin film with function of optical reflection.
Embodiment two
It is the manufacture method during semiconductive thin films such as non-crystalline silicon that embodiment two provides infrabasal plate.When infrabasal plate is the semiconductive thin films such as non-crystalline silicon, make infrabasal plate it is crucial that the conductive capability of the thin film improved on conductive pole position.The conductive capability of conductive pole exceeds at least two order of magnitude than the conductive capability of semiconductive thin film.One concrete implementation mode is that the electron mobility of semiconductive thin film only has 0.5cm2/ V s, the electron mobility of conductive pole is up to 1000cm2More than/V s.Electron mobility is the highest, and conductive capability is the strongest.The electron mobility of semiconductive thin film is low, it is ensured that do not have electricity conducting phenomenon between conductive pole.The electron mobility of conductive pole is high, it is ensured that conductive pole can carry out effectively conductive effect up and down.
Embodiment two provide infrabasal plate be the semiconductive thin film being dispersed with conductive pole, described conductive pole on described semiconductive thin film in definite shape, it is therefore preferable to cylindrical shape.Described conductive pole can carry out electricity transmission between the two of infrabasal plate surface；Described conductive pole is upper electrode near the surface of display medium side, and it is bottom electrode that described conductive pole deviates from the surface of display medium side, and wherein, described upper electrode is essentially identical with described bottom electrode size.
Fig. 5 is the making schematic diagram of the electro-optical display device infrabasal plate of second embodiment of the invention.Being processed by the laser annealing of fixed point on infrabasal plate 30, form the conducting medium 31 that conductive capability is higher, cylindrical, the surface portion of corresponding display medium side is upper electrode 33, and the surface portion deviating from display medium side is bottom electrode 32.Described upper electrode 33, bottom electrode 32 and conducting medium 31 are formed on described semiconductive thin film by laser annealing one-shot forming.
The concrete manufacture method of shown in Fig. 5 is: use the method fixed point of quasi-molecule laser annealing to form conductive pole on amorphous silicon membrane substrate.Preferably, use XeCl quasi-molecule laser to produce, laser beam is adjusted to the shape of conductive pole size, annealing temperature is adjusted to more than 500 DEG C.Successively to needing the position forming conductive pole to carry out laser annealing process.The XeCl quasi-molecule laser irradiation time of annealing was no less than 1 minute every time.
Embodiment three
It is the manufacture method during anisotropic conductive film comprising conductive particle that embodiment three provides infrabasal plate.Conductive adhesive film mainly includes resin adhesive agent, conductive particle two large divisions.Resin adhesive agent function is except blocks moisture, then, outside heat-resisting and insulation function, and the position of the most fixing conductive particle.
Resin is divided into thermoplastic resin and the big class of thermosetting resin two.Preferably, the thermosetting resins such as epoxy resin (Epoxy), Polyimide are used.Thermosetting resin has high temperatrue stability and thermal expansivity and the advantage such as hygroscopicity is low.Conductive particle mainly uses metal dust and polymer plastic pellet surface coating metal to be main.Gold, silver and ashbury metal etc. is plated on the metal powder nickel (Ni) of common use, gold (Au), nickel.Plastic core is closer to the thermal expansivity of resin basic material, when can avoid thermal cycle and thermal shock environments, under high temperature or low temperature environment, conductive particle reduces and interelectrode contact area because of the thermal expansivity difference with resin basic material, causing conducting resistance to rise, the even situation of open failure occurs.
The conductive particle that uses that Fig. 6 provides for the present invention realizes the anisotropic conductive film conducted electricity up and down.The making of described anisotropic conductive film is it is crucial that ensure to turn on up and down by conductive particle, and mutually insulated between conductive particle.
Different side's conductive characteristic has been affected by the particle diameter distribution of conductive particle and distributing homogeneity.Generally, conductive particle must have good uniform particle diameter and out of roundness.Common particle size range is between 0.1～10 μm.
The surface texture of the anisotropic conductive film shown in Fig. 6 is as shown in Figure 3 B.The diameter of described conductive particle 38 is more than the thickness of described infrabasal plate 30, and conductive particle 38 is respectively at exposed portion, two surfaces area of infrabasal plate 30, it is achieved conductive particle electric communication on infrabasal plate 30 thickness direction.Described conductive particle 38 disperses in certain distance, realizes electrical insulation each other on the in-plane of described infrabasal plate 30.
Embodiment four
In the detection device shown in Figure 1B, electric field is applied between the transparency conducting layer 11 and the conducting medium 31 of infrabasal plate of upper substrate, move or occur chemical reaction, the corresponding region of described electro-optical display device show the change of brightness or show the change of color at the region display medium 20 applying electric field.Not moving at the region display medium not applying electric field, the corresponding region of described photo-electric display does not show the change of brightness or does not show the change of color.
As shown in Figure 7 A, applying voltage 40 between bottom electrode 32 and transparency conducting layer 11, the voltage of bottom electrode 32 is transmitted to electrode 33 by conducting medium 31, makes to be formed between electrode 33 and transparency conducting layer 11 longitudinal electric field.The display medium 21 being in longitudinal electric field moves or chemical reaction occurs, and brightness flop or color change occurs.
As shown in Figure 7 B, in the plane of upper substrate 10, correspondence is applied with on the position of bottom electrode 32 of voltage, the display pattern 51 different from other regions occurs.In turn, by the change of pattern, it can be determined that on display medium 21 position of corresponding diagram 7A, it is applied with a voltage.
In a concrete implementation, display medium 20 is the liquid mixing electronegative black particles with the white particles of positively charged.Apply longitudinal electric field in the both sides up and down of liquid, electronegative black particles is toward positive polarity one side shifting of electric field, and the white particles of positively charged is toward negative polarity one side shifting of electric field simultaneously.Thus, the region applying longitudinal electric field in electro-optical display device there occurs the change of brightness and color.
Embodiment five
In the detection device shown in Figure 1A, a transverse electric field is applied at X/Y plane, move or occur chemical reaction, the corresponding region of described electro-optical display device show the change of brightness or show the change of color at the region display medium 20 applying electric field.Not moving at the region display medium not applying electric field, the corresponding region of described photo-electric display does not show the change of brightness or does not show the change of color.
Fig. 8 A, 8B are the operation principle schematic diagram of the electro-optical display device of fifth embodiment of the invention.As shown in Figure 8 A, between two bottom electrodes 321 and the bottom electrode 322 connecting conducting medium, a voltage 40 is applied.Described applying voltage 40 is transmitted to the most connected upper electrode 331 and upper electrode 332 by conducting medium respectively.So, between upper electrode 331 and upper electrode 332, it is applied with lateral voltage 40, thus forms transverse electric field, make the display medium 21 being in transverse electric field move or chemical reaction occurs, brightness flop region or color region of variation occur.
As shown in Figure 8 B, in the plane of upper substrate 10, correspondence is applied with the region between the bottom electrode 321 of voltage and bottom electrode 322, the display pattern 52 different from other regions occurs.In turn, by the change of pattern, it can be determined that on display medium 21 position of corresponding diagram 8B, it is applied with a voltage.
In a concrete implementation, display medium 20 is IPS (In Plane Switching) liquid crystal, is correspondingly pasted with Polarizer on upper substrate 10, shows the change of brightness in the region applying transverse electric field.
In another concrete implementation, display medium 20 is electroluminescent material PEDOT:PSS, shows the change of color in the region applying transverse electric field.This occasion, it is not necessary to attach Polarizer on upper substrate 10.
Embodiment six
The infrabasal plate of the band conductive particle of present invention offer is provided, it is referred to the electro-optical display device structure of first embodiment of the invention and the second embodiment, forms the electro-optical display device of the 4th embodiment of corresponding longitudinal electric field and the electro-optical display device of the 5th embodiment of corresponding transverse electric field.
Fig. 9 A is the generalized section of the electro-optical display device based on transverse electric field of sixth embodiment of the invention, including upper substrate 10, infrabasal plate 30, and the display medium 20 being clipped between upper substrate 10 and infrabasal plate 30.In described infrabasal plate 30, dense distribution conductive particle 38.As shown in Figure 9 A, the lower surface at described infrabasal plate 30 disposes two electrodes 41 and 42, and applies a voltage 40 between said two electrode.Described applying voltage 40 forms transverse electric field between two electrodes, makes the display medium being in transverse electric field move or occur chemical reaction, brightness flop region as shown in Figure 9 A or color region of variation 21 occurs.CC ' the cross-section structure of corresponding diagram 9A, is the plane display figure of electro-optical display device as shown in Figure 9 B.In a particular application, observe the brightness flop or color region of variation 53 that should occur on electro-optical display device, if brightness flop or color change does not occur in described region, it can be determined that described region does not apply voltage.
Figure 10 A is the generalized section of the electro-optical display device based on longitudinal electric field of sixth embodiment of the invention, including upper substrate 10, infrabasal plate 30, and the display medium 20 being clipped between upper substrate 10 and infrabasal plate 30.Described upper substrate 10 is dispersed with transparency conducting layer 11.In described infrabasal plate 30, dense distribution conductive particle 38.As shown in Figure 10 A, between described transparency conducting layer 11 and the lower surface electrode 41 of described infrabasal plate 30, a voltage 40 is applied.Described applying voltage 40 forms longitudinal electric field between described electrode 41 and described transparency conducting layer 11, makes the display medium being in longitudinal electric field move or occur chemical reaction, brightness flop region as shown in Figure 10 A or color region of variation 21 occurs.DD ' the cross-section structure of corresponding diagram 10A, is the plane display figure of electro-optical display device as shown in Figure 10 B.In a particular application, observe the brightness flop or color region of variation 54 that should occur on electro-optical display device, if brightness flop or color change does not occur in described region, it can be determined that described region does not apply voltage.
The substrate that the present invention provides can be generally applicable in electro-optical display device, including liquid crystal display, Electronic Paper, electroluminescent display etc., and is applicable to flexible optoelectronic display device.The electro-optical display device that the present invention provides can be used for the electrical characteristic of testing circuit, and the circuit electrical characteristic of the pattern that especially becomes more meticulous, such as detection, the detection etc. of sensor electricity pattern short interruption of circuit board trace short interruption.The present invention is not limited to the detection of above circuit, it is also possible to for detecting the electrically abnormal characteristic such as open circuit or short circuit of any conductive pattern.
The preferred embodiment of the present invention described in detail above; but, the present invention is not limited to the detail in above-mentioned embodiment, in the technology concept of the present invention; technical scheme can be carried out multiple equivalents, these equivalents belong to protection scope of the present invention.
It is further to note that each the concrete technical characteristic described in above-mentioned detailed description of the invention, in the case of reconcilable, can be combined by any suitable means.In order to avoid unnecessary repetition, various possible compound modes are illustrated by the present invention the most separately.
Claims (18)
1. a photoelectric display substrate, including: dielectric substrate, there are both sides, side is distributed multiple first electrode, separately
Side is distributed multiple second electrode；And the multiple conductive through holes being evenly distributed in described dielectric substrate, an institute
State conductive through hole and connect the second electrode described in the first electrode and described in；Described substrate has different side's electric conductivity,
Realize electrically conducting by described conductive through hole on thickness direction, and insulate in the in-plane direction.
Substrate the most according to claim 1, it is characterised in that: described first electrode on described side with described second
Electrode is corresponding on described opposite side to be distributed in dot matrix, and described first and second electrode uses metal, alloy, compound gold
Belong to or metal conductive oxide material.
Substrate the most according to claim 1 and 2, it is characterised in that: described first and second electrode be shaped as square or
Circle, the width of the first electrode or a diameter of A, the distance between two adjacent described first electrodes is B, wherein,
A/B≥1。
4. a photoelectric display substrate, including: Semiconductor substrate, there are both sides, side is distributed multiple 3rd electrode,
Opposite side is distributed multiple 4th electrode；And it is uniformly distributed multiple conductive poles on the semiconductor substrate, one
Described conductive pole connects the 4th electrode described in the 3rd electrode and described in；Described substrate has different side's conductive plate,
Realize electrically conducting by described conductive pole in a thickness direction, and insulate in the in-plane direction.
Substrate the most according to claim 4, it is characterised in that: third and fourth electrode described and described conductive pole are once
Molding is formed in described dielectric substrate.
6. according to the substrate described in claim 4 or 5, it is characterised in that: third and fourth electrode described be shaped as square or
Circle, the width of the 3rd electrode or a diameter of C, the distance between two adjacent described 3rd electrodes is D, wherein,
C/D≥1。
7. a photoelectric display substrate, including: resin film substrate and be evenly distributed in described resin film substrate
Conductive particle, described substrate is had different side's conductive plate, is realized electrically by described conductive particle in a thickness direction
Conducting, and insulate in the in-plane direction.
Substrate the most according to claim 7, it is characterised in that: the particle diameter of described conductive particle sticks together more than described resin
The thickness of agent film, through described thin film and described thin film both side surface protrude.
9. a photoelectric display substrate, including: substrate；And it is uniformly distributed conducting medium over the substrate, described
Substrate has different side's electric conductivity, realizes electrically conducting by described conductive materials in a thickness direction, and in plane side
Upwards insulate.
10. a manufacture method for photoelectric display substrate, including: a dielectric substrate is provided, formed be evenly distributed on described absolutely
Multiple conductive through holes on edge substrate；Conducting medium is injected in described through hole；Formation is evenly distributed on described insulation
Multiple first electrodes of substrate both sides and multiple second electrode, conductive through hole described in connect the first electrode described in
Second electrode described in one, described substrate has different side's conductive plate, real by described conductive particle in a thickness direction
Existing electrically conducting, and insulate in the in-plane direction.
11. manufacture methods according to claim 10, it is characterised in that: described first and second electrode by ink jet printing,
Silk screen printing or paster technique are formed at described dielectric substrate both sides.
The manufacture method of 12. 1 kinds of photoelectric display substrates, including: semi-conductive substrate is provided, uses laser annealing to be formed at
Equally distributed multiple 3rd electrodes in described Semiconductor substrate both sides, multiple 4th electrode, and connect described 3rd,
Multiple conductive poles of four electrodes, described substrate has different side's conductive plate, in a thickness direction by described conduction
Grain realizes electrically conducting, and insulate in the in-plane direction.
13. manufacture methods according to claim 12, it is characterised in that: third and fourth electrode described and described conductive pole
Formed on the semiconductor substrate by laser annealing one-shot forming.
The manufacture method of 14. 1 kinds of photoelectric display substrates, including: provide resin adhesive agent thin film, at described resin adhesive agent
Uniformly dispersing conductive particle in thin film, wherein, the particle diameter of described conductive particle is more than described resin adhesive agent thin film
Thickness, described substrate has different side's conductive plate, realizes electrically conducting by described conductive particle in a thickness direction,
And insulate in the in-plane direction.
15. 1 kinds of electro-optical display devices, including: the substrate as described in claim 1-9；Right with what described substrate was oppositely arranged
Put substrate；And display medium, it is configured between described substrate and described counter substrate.
16. according to electro-optical display device described in claim 15, it is characterised in that: it is situated between near described display in described counter substrate
Matter is configured with transparency conducting layer on side.
17. according to electro-optical display device described in claim 16, it is characterised in that: it is additionally included in the side table of described counter substrate
On face, the color film layer of configuration, it is coated with described transparency conducting layer.
18. according to electro-optical display device described in claim 15, it is characterised in that: described display medium is liquid crystal, described right
Put substrate to deviate from and on described display medium side, be configured with Polarizer, and be configured with reflecting layer in the side of described substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510161799.7A CN106200140A (en) | 2015-05-05 | 2015-05-05 | Photoelectric display substrate, manufacture method and electro-optical display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510161799.7A CN106200140A (en) | 2015-05-05 | 2015-05-05 | Photoelectric display substrate, manufacture method and electro-optical display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106200140A true CN106200140A (en) | 2016-12-07 |
Family
ID=57457390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510161799.7A Pending CN106200140A (en) | 2015-05-05 | 2015-05-05 | Photoelectric display substrate, manufacture method and electro-optical display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106200140A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107403172A (en) * | 2017-08-10 | 2017-11-28 | 华进半导体封装先导技术研发中心有限公司 | Encapsulating structure of fingerprint recognition chip and preparation method thereof |
| CN108563047A (en) * | 2018-03-15 | 2018-09-21 | 京东方科技集团股份有限公司 | Line detection apparatus and wireline inspection method |
| CN109147677A (en) * | 2017-06-15 | 2019-01-04 | 佳能株式会社 | Luminaire, display equipment, information processing equipment, control method and medium |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6476032A (en) * | 1987-09-17 | 1989-03-22 | Seiko Instr & Electronics | Electrode for display panel |
| TW543917U (en) * | 2002-01-23 | 2003-07-21 | Chunghwa Picture Tubes Ltd | Flat display panel and its apparatus |
| CN1530715A (en) * | 2003-03-17 | 2004-09-22 | 日本电气株式会社 | Liquid-crystal displaying device and producing method thereof |
| CN100395640C (en) * | 2003-12-09 | 2008-06-18 | 富士通株式会社 | Liquid crystal display and method of manufacturing the same |
| CN103472600A (en) * | 2013-05-17 | 2013-12-25 | 友达光电股份有限公司 | Circuit substrate and display panel comprising same |
-
2015
- 2015-05-05 CN CN201510161799.7A patent/CN106200140A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6476032A (en) * | 1987-09-17 | 1989-03-22 | Seiko Instr & Electronics | Electrode for display panel |
| TW543917U (en) * | 2002-01-23 | 2003-07-21 | Chunghwa Picture Tubes Ltd | Flat display panel and its apparatus |
| US20030142261A1 (en) * | 2002-01-23 | 2003-07-31 | Chunghwa Picture Tubes, Ltd. | Panel and flat-panel display device containing the same |
| CN1530715A (en) * | 2003-03-17 | 2004-09-22 | 日本电气株式会社 | Liquid-crystal displaying device and producing method thereof |
| CN100395640C (en) * | 2003-12-09 | 2008-06-18 | 富士通株式会社 | Liquid crystal display and method of manufacturing the same |
| CN103472600A (en) * | 2013-05-17 | 2013-12-25 | 友达光电股份有限公司 | Circuit substrate and display panel comprising same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109147677A (en) * | 2017-06-15 | 2019-01-04 | 佳能株式会社 | Luminaire, display equipment, information processing equipment, control method and medium |
| CN107403172A (en) * | 2017-08-10 | 2017-11-28 | 华进半导体封装先导技术研发中心有限公司 | Encapsulating structure of fingerprint recognition chip and preparation method thereof |
| CN108563047A (en) * | 2018-03-15 | 2018-09-21 | 京东方科技集团股份有限公司 | Line detection apparatus and wireline inspection method |
| CN108563047B (en) * | 2018-03-15 | 2021-10-01 | 京东方科技集团股份有限公司 | Line detection device and line detection method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Hyun et al. | Screen printing of highly loaded silver inks on plastic substrates using silicon stencils | |
| CN105467708B (en) | Writing board, electronic writing equipment and manufacturing method | |
| CN107093493B (en) | A kind of paper base flexible electrode and its preparation method and application | |
| US8278561B2 (en) | Conductive pattern forming film, and conductive pattern forming method and conductive pattern forming apparatus for the conductive pattern forming film | |
| CN107978627A (en) | Display device and its manufacture method with micro- cap rock | |
| CN102445808B (en) | Transparent base plate lattice type electrophoresis display device and manufacture method thereof | |
| CN106200140A (en) | Photoelectric display substrate, manufacture method and electro-optical display device | |
| US9954012B2 (en) | Display device | |
| CN103901679A (en) | Array substrate for fringe field switching mode liquid crystal display device and method of fabricating the same | |
| CN106339144A (en) | Laser touch panel, display equipment, display system and laser touch method | |
| CN106197253B (en) | A kind of graphene detecting element for the subtle shape changing detection of apparatus casing | |
| CN103034366A (en) | Display substrate manufacturing method, black matrix, display substrate and display device | |
| CN102096539A (en) | Touch panel | |
| US10600978B2 (en) | Liquid crystal element and light control apparatus for accurate light control | |
| CN202502321U (en) | Anisotropic conductive film pressure head flatness adjusting device | |
| CN104735918B (en) | The manufacturing method of wiring board and the ink-jet coating apparatus for being used in this method | |
| CN105632652B (en) | A kind of high-performance becomes more meticulous the preparation method of transparent conductive electrode | |
| CN104280997B (en) | Mask plate and its manufacturing method, the method using mask plate composition | |
| CN110471555A (en) | The manufacturing method of wiring substrate, display device and wiring substrate | |
| CN102762026B (en) | Structure and manufacturing method of transparent conducting circuit | |
| CN109616449B (en) | Flexible electronic device and manufacturing method thereof | |
| US20120170106A1 (en) | Electronic paper display device and method of manufacturing the same | |
| CN207541605U (en) | Jamproof touch-control sensing layer, touch screen and touch control display apparatus | |
| EP1138079A1 (en) | Method for producing a substrate with undirectional conductivity and display device using such a substrate in an anisotropic contact layer | |
| KR101433105B1 (en) | An Array mother glass substrate of Liquid Crystal Display Device and the method for fabricating thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161207 |
|
| WD01 | Invention patent application deemed withdrawn after publication |