CN106198432A - A kind of measuring method of electron irradiation dosage - Google Patents
A kind of measuring method of electron irradiation dosage Download PDFInfo
- Publication number
- CN106198432A CN106198432A CN201610810576.3A CN201610810576A CN106198432A CN 106198432 A CN106198432 A CN 106198432A CN 201610810576 A CN201610810576 A CN 201610810576A CN 106198432 A CN106198432 A CN 106198432A
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000002835 absorbance Methods 0.000 claims abstract description 50
- 238000005259 measurement Methods 0.000 claims description 11
- 238000000870 ultraviolet spectroscopy Methods 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 206010021703 Indifference Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/33—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The invention discloses the measuring method of a kind of electron irradiation dosage, comprise the steps: to place, to form sample multi-disc microscope slide overlap；Measure background absorbance value A of described sample0；Described sample is placed in the container that surrounding seals；Described sample is carried out irradiation；Measure the absorbance A of the described sample after irradiation；According to described background absorbance value A0With the irradiation dose value that described absorbance A calculates described sample by preset formulaAbove-mentioned measuring method, measures the microscope slide after using and can also reuse under being exposed to the sun of sunlight, efficiently solve the problem that in prior art, dosage sheet cannot reuse.
Description
Technical field
The present invention relates to irradiation dose field of measuring technique, particularly to the measuring method of a kind of electron irradiation dosage.
Background technology
In large power semiconductor device production technology, electron irradiation link is the most requisite step；That is, pass through
High-power electron beam goes to bombard chip, and incident electron collides with silicon atom, and silicon atom moves on to its lattice from normal position
His position, thus in silicon, introduce defect, drawbacks described above can form more complicated lacking with impurity and other defect phase separation
Fall into, thus in forbidden band, form new electron energy level.Energy level in forbidden band is compounded with contribution to nonequilibrium carrier, thus contracts
Short minority carrier life time, causes chip parameter to change.Chip is carried out the irradiation processing of various dose, can integral chip parameter reach
To an optimum state.
The way that current dose is measured is that after utilizing predose, the change of absorbance of material is absorbed to calculate material
Irradiation dose.Dosage sheet is placed on irradiation bed in sequence, dosage sheet is carried out irradiation operation, then dosage
Sheet is put into baking oven constant temperature a period of time at a certain temperature, measures irradiation post dose sheet absorbance afterwards, recording result
After being entered into software, software calculates, according to preset formula, the irradiation dose that dosage sheet is absorbed.
Using upper type such as to measure, its cost is high；Dosage sheet is as consumable goods, and its price is up to thousands of units one box,
And the low precision measured for low dose.
Summary of the invention
It is an object of the invention to provide the measuring method of a kind of electron irradiation dosage, this measuring method can solve dosage sheet
The problem that cannot reuse.
For achieving the above object, the present invention provides the measuring method of a kind of electron irradiation dosage, comprises the steps:
Multi-disc microscope slide overlap is placed, to form sample；
Measure background absorbance value A of described sample0；
Described sample is placed in the container that surrounding seals；
Described sample is carried out irradiation；
Measure the absorbance A of the described sample after irradiation；
According to described background absorbance value A0With the irradiation agent that described absorbance A calculates described sample by preset formula
Value
Relative to above-mentioned background technology, the measuring method of the electron irradiation dosage that the present invention provides, its core is, will be many
Sheet microscope slide overlap is placed, thus forms sample；For sample, measure its background absorbance value A0；Then sample is positioned over
In the container that surrounding seals, and sample is carried out irradiation operation；After irradiation, the absorbance A of measuring samples again, and
According to background absorbance value A0With the absorbance A irradiation dose value by preset formula calculating sampleUse above-mentioned setting
Mode, measures the microscope slide after using and can also reuse under being exposed to the sun of sunlight, efficiently solve dosage in prior art
The problem that sheet cannot reuse.
Preferably, background absorbance value A of the described sample of described measurement0Concrete steps include:
Described sample is positioned over ultraviolet visible spectrophotometer；
Background absorbance value A of described sample is measured under the conditions of monochromatic light0。
Preferably, the concrete steps of the absorbance A of the described sample after described measurement irradiation include:
Described sample after irradiation is positioned over ultraviolet visible spectrophotometer；
Measure the absorbance A of the described sample after irradiation.
Preferably, described according to described background absorbance value A0Calculated described by preset formula with described absorbance A
The irradiation dose value of sampleStep specifically include:
According to preset formulaCalculating the irradiation dose value of sample, wherein K is proportionality coefficient；
Or
According to preset formulaCalculate the irradiation dose value of sample, wherein K1And K2It is respectively the
One coefficient and the second coefficient.
Preferably, described according to described background absorbance value A0Calculated described by preset formula with described absorbance A
The irradiation dose value of sampleStep after include:
Judge the irradiation dose value of described sampleAnd whether the difference between the actual irradiation dose value of chip meets little
In equal to described actual irradiation dose value 5% scope, the most described chip meets the requirements.
Preferably, described multi-disc microscope slide overlap is placed, specifically includes forming the step of sample:
By quantity be the microscope slide axis that 25～35 chip sizes are identical be vertical line overlap place, to form sample.
Preferably, the length range of described microscope slide between 75mm～77mm, width between 24mm～26mm, thickness
Between 0.8mm～1.2mm.
Preferably, the described step that described sample is carried out irradiation particularly as follows:
To the irradiation dose of described sample irradiation within the scope of 160Gy～640Gy.
Preferably, described described sample is placed in surrounding seal container in step particularly as follows:
Described sample is placed in the lead box that surrounding seals.
Preferably, the wall thickness of described lead box is more than or equal to 5mm.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to according to
The accompanying drawing provided obtains other accompanying drawing.
The flow chart of the measuring method of the electron irradiation dosage that Fig. 1 is provided by the embodiment of the present invention；
The sectional view of the lead box that Fig. 2 is provided by the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
In order to make those skilled in the art be more fully understood that the present invention program, below in conjunction with the accompanying drawings and be embodied as
The present invention is described in further detail for mode.
Refer to the flow process of the measuring method of the electron irradiation dosage that Fig. 1 and Fig. 2, Fig. 1 are provided by the embodiment of the present invention
Figure；The sectional view of the lead box that Fig. 2 is provided by the embodiment of the present invention.
The measuring method of a kind of electron irradiation dosage that the present invention provides, mainly comprises the steps:
S1, by multi-disc microscope slide overlap place, to form sample；
S2, measure background absorbance value A of described sample0；
S3, described sample is placed in surrounding seal container in；
S4, described sample is carried out irradiation；
The absorbance A of the described sample after S5, measurement irradiation；
S6, according to described background absorbance value A0With the spoke that described absorbance A calculates described sample by preset formula
According to dose value
Above-mentioned measuring method, its core is step S1, multi-disc microscope slide overlap is placed, to form sample；The present invention
Drawn by test, by quantity be the microscope slide axis that 25～35 chip sizes are identical be vertical line overlap place, with formed
Sample is optimal, is arranged such, and microscope slide is after irradiation operation, and microscope slide is black, and it is exposed to the sun in the sun
Hour, microscope slide is gradually brought to true qualities, it is possible to proceed the measurement of electron irradiation dosage.So, just can be effective
Reduce waste, solve the problem that cannot reuse.
That is, in step S1, according to the energy of electron linear accelerator, the density of microscope slide and electron beam in microscope slide
Range, choose a number of microscope slide as measurement standard quantity, and be fixed into an entirety.
For above-mentioned steps S2 with step S5, measure background absorbance value A0And during absorbance A after irradiation, this
Invention preferably employs ultraviolet visible spectrophotometer and measures；Ultraviolet visible spectrophotometer will be positioned over by sample,
Then background absorbance value A of measuring samples under the conditions of monochromatic light0。
The most similarly, the concrete steps of the absorbance A of the sample after measuring irradiation include:
Sample after irradiation is positioned over ultraviolet visible spectrophotometer；
Measure the absorbance A of the sample after irradiation.
Present invention preferably employs absorbance principle and measure irradiation dose, its principle is as follows:
The molecule of various materials and structure thereof, present the characteristic of selective absorbing to the monochromatic light of different wave length.The present invention
Technical scheme utilize sample its energy absorption characteristic monochromatic to specific wavelength after electron beam irradiation to send out
The feature of changing, by the change of sample absorbance after measurement pre-irradiation, utilizes formula to calculate the irradiation dose of electron beam.
In conjunction with ultraviolet-uisible spectrophotometer structure chart, the grating dispersion in monochromator of light source outgoing beam becomes to launch light
Spectrum, after wavelength selects, obtains the monochromatic light of required wavelength, and this monochromatic light passes sample, and its energy is absorbed by the sample
A part, residue luminous energy is received by detector, changes into the signal of telecommunication, amplified, delivers to microcomputer unit and carries out calculation process, by
Display provides measurement result.That is, in step S2, sample is put in ultraviolet-uisible spectrophotometer, monochromatic at specific wavelength
Background absorbance value A of measuring samples under optical condition0.And in step s 5, after irradiation operation completes, take out sample, put
Enter in ultraviolet-uisible spectrophotometer, measure the absorbance A of irradiated sample.
And according to background absorbance value A0With the absorbance A irradiation dose value by preset formula calculating sampleStep
Suddenly specifically include:
According to preset formulaCalculating the irradiation dose value of sample, wherein K is proportionality coefficient；
Or
According to preset formulaCalculate the irradiation dose value of sample, wherein K1And K2It is respectively the
One coefficient and the second coefficient.
Preset formulaCalculate the first irradiation dose value of sample compared to preset formulaThe the second irradiation dose value calculating sample is wanted precisely, the either value of K, or K1And K2Take
Value is both needed to be drawn by a large amount of contrast tests, and K, K1And K2Value mode be referred to prior art, the present invention will be the most superfluous
State.
In the present invention, include after the step according to above-mentioned calculating:
The irradiation dose value of judgement sampleAnd whether the difference between the actual irradiation dose value of chip meets is less than
In the scope of the 5% of actual irradiation dose value, the most then chip meets the requirements.
The present invention, through test of many times, determines the irradiation dose value of sampleActual irradiation dose value with chip
Between difference meet less than or equal to actual irradiation dose value 5% within the scope of time, then chip often meets production requirement.
For by quantity be the microscope slide axis that 25～35 chip sizes are identical be vertical line overlap place, with formed sample
Product, the present invention is in view of in irradiation operation process, owing to electron beam is in shuttle-scanning state, in order to avoid edge effect pair
The impact of sample certainty of measurement, therefore puts into lead box as shown in Figure of description 2 by sample.
It can be seen that the identical microscope slide 1 of 25～35 chip sizes is positioned in lead box 2, lead box 2 surrounding seals, and carries glass
Sheet 1 closely cooperates with lead box 2；The present invention preferably by the length range of microscope slide 1 between 75mm～77mm, width at 24mm～
Between 26mm, thickness is between 0.8mm～1.2mm, and the wall thickness of lead box 2 is more than or equal to 5mm.Length and width and the height of lead box 2 set
Put at 87mm, 37mm and 38mm, in the range of ± 5%.
The size of microscope slide 1 is long 76.2mm, wide 25.4mm, thickness are optimal when being 1.0mm；Utilize above-mentioned microscope slide 1 with
Lead box 2 can be effectively improved the repeatable utilization rate of microscope slide 1, and the certainty of measurement of irradiation dose and prior art indifference
Different, so, it is possible to the problem effectively solving to reuse sample.
For the sample using aforesaid way to arrange and lead box 2, it is preferably 160Gy～640Gy scope at irradiation dose
Within；That is, within the scope of 160Gy～640Gy, microscope slide 1 and lead box 2 that the employing present invention is above-mentioned can improve load further
The recycling rate of waterused of slide 1；And time within the scope of 160Gy～640Gy, present good between absorbance and irradiation dose
Linear relationship, contributes to utilizing above-mentioned preset formulaOr preset formula
Calculate the irradiation dose value of sample
It should be noted that in this manual, the relational terms of such as first and second etc is used merely to one
Entity makes a distinction with other several entities, and not necessarily requires or imply and there is any this reality between these entities
Relation or order.
Above the measuring method of electron irradiation dosage provided by the present invention is described in detail.Used herein
Principle and the embodiment of the present invention are set forth by specific case, and the explanation of above example is only intended to help to understand this
The method of invention and core concept thereof.It should be pointed out that, for those skilled in the art, without departing from this
On the premise of bright principle, it is also possible to the present invention is carried out some improvement and modification, these improve and modification also falls into present invention power
In the protection domain that profit requires.
Claims (10)
1. the measuring method of an electron irradiation dosage, it is characterised in that comprise the steps:
Multi-disc microscope slide overlap is placed, to form sample；
Measure background absorbance value A of described sample0；
Described sample is placed in the container that surrounding seals；
Described sample is carried out irradiation；
Measure the absorbance A of the described sample after irradiation；
According to described background absorbance value A0With the irradiation dose value that described absorbance A calculates described sample by preset formula
Measuring method the most according to claim 1, it is characterised in that background absorbance value A of the described sample of described measurement0
Concrete steps include:
Described sample is positioned over ultraviolet visible spectrophotometer；
Background absorbance value A of described sample is measured under the conditions of monochromatic light0。
Measuring method the most according to claim 1, it is characterised in that the absorbance of the described sample after described measurement irradiation
The concrete steps of value A include:
Described sample after irradiation is positioned over ultraviolet visible spectrophotometer；
Measure the absorbance A of the described sample after irradiation.
Measuring method the most according to claim 1, it is characterised in that described according to described background absorbance value A0With described
Absorbance A calculates the irradiation dose value of described sample by preset formulaStep specifically include:
According to preset formulaCalculating the irradiation dose value of sample, wherein K is proportionality coefficient；Or
According to preset formulaCalculate the irradiation dose value of sample, wherein K1And K2Being respectively first is
Number and the second coefficient.
Measuring method the most according to claim 1, it is characterised in that described according to described background absorbance value A0With described
Absorbance A calculates the irradiation dose value of described sample by preset formulaStep after include:
Judge the irradiation dose value of described sampleAnd whether the difference between the actual irradiation dose value of chip meets is less than
In the scope of the 5% of described actual irradiation dose value, the most described chip meets the requirements.
6. according to the measuring method described in claim 1 to 5 any one, it is characterised in that described that multi-disc microscope slide is overlapping
Place, specifically include forming the step of sample:
By quantity be the microscope slide axis that 25～35 chip sizes are identical be vertical line overlap place, to form sample.
Measuring method the most according to claim 6, it is characterised in that the length range of described microscope slide is at 75mm～77mm
Between, width is between 24mm～26mm, and thickness is between 0.8mm～1.2mm.
8. according to the measuring method described in claim 1 to 5 any one, it is characterised in that described described sample is carried out spoke
According to step particularly as follows:
To the irradiation dose of described sample irradiation within the scope of 160Gy～640Gy.
9. according to the measuring method described in claim 1 to 5 any one, it is characterised in that described described sample is placed in four
Week seal container in step particularly as follows:
Described sample is placed in the lead box that surrounding seals.
Measuring method the most according to claim 9, it is characterised in that the wall thickness of described lead box is more than or equal to 5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610810576.3A CN106198432A (en) | 2016-09-08 | 2016-09-08 | A kind of measuring method of electron irradiation dosage |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610810576.3A CN106198432A (en) | 2016-09-08 | 2016-09-08 | A kind of measuring method of electron irradiation dosage |
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| Publication Number | Publication Date |
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| CN106198432A true CN106198432A (en) | 2016-12-07 |
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| CN201610810576.3A Pending CN106198432A (en) | 2016-09-08 | 2016-09-08 | A kind of measuring method of electron irradiation dosage |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110699415A (en) * | 2019-10-22 | 2020-01-17 | 中国南方电网有限责任公司超高压输电公司检修试验中心 | Ultraviolet treatment test method and device for algae on surface of silicone rubber |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6219783A (en) * | 1985-07-18 | 1987-01-28 | Nippon Atom Ind Group Co Ltd | Coloring dosimeter |
| EP0329131A1 (en) * | 1988-02-18 | 1989-08-23 | Kernforschungszentrum Karlsruhe Gmbh | Instrument for measuring radiation doses using a fluorescent glass dosimeter |
| WO1991012498A1 (en) * | 1990-02-09 | 1991-08-22 | Isp Investments Inc. | Radiation dosage indicator |
| CN2120344U (en) * | 1992-05-30 | 1992-10-28 | 江苏省农业科学院原子能农业利用研究所 | Double parameter dose detector |
| CN102540233A (en) * | 2011-12-09 | 2012-07-04 | 江苏省农业科学院 | Determination method for effective range of electronic beam radiation and banding dosage indicating meter |
| CN202330730U (en) * | 2011-12-09 | 2012-07-11 | 江苏省农业科学院 | Strip-shaped electron beam irradiation dose indicating gage for determining effective electron beam irradiation range |
| CN102928863A (en) * | 2012-11-26 | 2013-02-13 | 中国航天科技集团公司第五研究院第五一〇研究所 | Film radiation dosage testing clamp |
| CN203350457U (en) * | 2013-07-12 | 2013-12-18 | 中国疾病预防控制中心辐射防护与核安全医学所 | Fast, thermal neutron grouping measurement personal dosimeter |
-
2016
- 2016-09-08 CN CN201610810576.3A patent/CN106198432A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6219783A (en) * | 1985-07-18 | 1987-01-28 | Nippon Atom Ind Group Co Ltd | Coloring dosimeter |
| EP0329131A1 (en) * | 1988-02-18 | 1989-08-23 | Kernforschungszentrum Karlsruhe Gmbh | Instrument for measuring radiation doses using a fluorescent glass dosimeter |
| WO1991012498A1 (en) * | 1990-02-09 | 1991-08-22 | Isp Investments Inc. | Radiation dosage indicator |
| CN2120344U (en) * | 1992-05-30 | 1992-10-28 | 江苏省农业科学院原子能农业利用研究所 | Double parameter dose detector |
| CN102540233A (en) * | 2011-12-09 | 2012-07-04 | 江苏省农业科学院 | Determination method for effective range of electronic beam radiation and banding dosage indicating meter |
| CN202330730U (en) * | 2011-12-09 | 2012-07-11 | 江苏省农业科学院 | Strip-shaped electron beam irradiation dose indicating gage for determining effective electron beam irradiation range |
| CN102928863A (en) * | 2012-11-26 | 2013-02-13 | 中国航天科技集团公司第五研究院第五一〇研究所 | Film radiation dosage testing clamp |
| CN203350457U (en) * | 2013-07-12 | 2013-12-18 | 中国疾病预防控制中心辐射防护与核安全医学所 | Fast, thermal neutron grouping measurement personal dosimeter |
Non-Patent Citations (1)
| Title |
|---|
| 郑正等: "一种用于大剂量常规监测的玻璃剂量计", 《南京大学学报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110699415A (en) * | 2019-10-22 | 2020-01-17 | 中国南方电网有限责任公司超高压输电公司检修试验中心 | Ultraviolet treatment test method and device for algae on surface of silicone rubber |
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Application publication date: 20161207 |