CN106191863A - 一种太阳能电池生产工艺用硅片快速减薄装置 - Google Patents
一种太阳能电池生产工艺用硅片快速减薄装置 Download PDFInfo
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- CN106191863A CN106191863A CN201610691845.9A CN201610691845A CN106191863A CN 106191863 A CN106191863 A CN 106191863A CN 201610691845 A CN201610691845 A CN 201610691845A CN 106191863 A CN106191863 A CN 106191863A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 27
- 239000010703 silicon Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000003028 elevating effect Effects 0.000 claims abstract description 22
- 230000005611 electricity Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 241000127225 Enceliopsis nudicaulis Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 210000004247 hand Anatomy 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 hydrogen Sodium oxide Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610691845.9A CN106191863B (zh) | 2016-08-17 | 2016-08-17 | 一种太阳能电池生产工艺用硅片快速减薄装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610691845.9A CN106191863B (zh) | 2016-08-17 | 2016-08-17 | 一种太阳能电池生产工艺用硅片快速减薄装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106191863A true CN106191863A (zh) | 2016-12-07 |
CN106191863B CN106191863B (zh) | 2018-09-28 |
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CN201610691845.9A Active CN106191863B (zh) | 2016-08-17 | 2016-08-17 | 一种太阳能电池生产工艺用硅片快速减薄装置 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107199488A (zh) * | 2017-06-16 | 2017-09-26 | 徐州蓝湖信息科技有限公司 | 一种光伏太阳能硅片减薄处理装置 |
CN109008482A (zh) * | 2018-07-10 | 2018-12-18 | 吴浩 | 一种电子产品展示设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008016691A (ja) * | 2006-07-07 | 2008-01-24 | Kwansei Gakuin | 単結晶炭化ケイ素基板の表面改質方法、単結晶炭化ケイ素薄膜の形成方法、イオン注入アニール方法及び単結晶炭化ケイ素基板、単結晶炭化ケイ素半導体基板 |
CN102194724A (zh) * | 2010-03-12 | 2011-09-21 | 普雷茨特光电子有限公司 | 用于监测硅片的厚度的装置和方法以及用于硅片减薄的装置 |
CN102786227A (zh) * | 2012-07-27 | 2012-11-21 | 京东方科技集团股份有限公司 | 一种玻璃面板支撑装置及玻璃面板减薄设备 |
CN203360279U (zh) * | 2013-07-25 | 2013-12-25 | 京东方科技集团股份有限公司 | 基板减薄固定工具及基板减薄装置 |
CN204400822U (zh) * | 2014-12-30 | 2015-06-17 | 湖北优尼科光电技术股份有限公司 | 玻璃基板减薄装置 |
-
2016
- 2016-08-17 CN CN201610691845.9A patent/CN106191863B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008016691A (ja) * | 2006-07-07 | 2008-01-24 | Kwansei Gakuin | 単結晶炭化ケイ素基板の表面改質方法、単結晶炭化ケイ素薄膜の形成方法、イオン注入アニール方法及び単結晶炭化ケイ素基板、単結晶炭化ケイ素半導体基板 |
CN102194724A (zh) * | 2010-03-12 | 2011-09-21 | 普雷茨特光电子有限公司 | 用于监测硅片的厚度的装置和方法以及用于硅片减薄的装置 |
CN102786227A (zh) * | 2012-07-27 | 2012-11-21 | 京东方科技集团股份有限公司 | 一种玻璃面板支撑装置及玻璃面板减薄设备 |
CN203360279U (zh) * | 2013-07-25 | 2013-12-25 | 京东方科技集团股份有限公司 | 基板减薄固定工具及基板减薄装置 |
CN204400822U (zh) * | 2014-12-30 | 2015-06-17 | 湖北优尼科光电技术股份有限公司 | 玻璃基板减薄装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107199488A (zh) * | 2017-06-16 | 2017-09-26 | 徐州蓝湖信息科技有限公司 | 一种光伏太阳能硅片减薄处理装置 |
CN107199488B (zh) * | 2017-06-16 | 2019-10-11 | 国网山东省电力公司经济技术研究院 | 一种光伏太阳能硅片减薄处理装置 |
CN109008482A (zh) * | 2018-07-10 | 2018-12-18 | 吴浩 | 一种电子产品展示设备 |
CN109008482B (zh) * | 2018-07-10 | 2021-03-16 | 吴浩 | 一种电子产品展示设备 |
Also Published As
Publication number | Publication date |
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CN106191863B (zh) | 2018-09-28 |
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Effective date of registration: 20180820 Address after: 215300 No. 2 Dongping Road, Bacheng Town, Kunshan City, Suzhou, Jiangsu, China 2 Applicant after: Suzhou Asia Ao Xin Enterprise Management Consulting Co., Ltd. Address before: 543200 first floor, 96 Guangnan Road, Cenxi, Wuzhou, the Guangxi Zhuang Autonomous Region Applicant before: East, Cenxi City ahead power Science and Technology Development Co., Ltd. |
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Effective date of registration: 20190115 Address after: 336000 Jingfa Avenue, Yichun Economic and Technological Development Zone, Jiangxi Province Patentee after: Yuze Semiconductor Co., Ltd. Address before: 215300 No. 2 Dongping Road, Bacheng Town, Kunshan City, Suzhou, Jiangsu, China 2 Patentee before: Suzhou Asia Ao Xin Enterprise Management Consulting Co., Ltd. |